CN102324898A - Broadband automatic biasing Darlington linear amplifier circuit with linear compensation - Google Patents
Broadband automatic biasing Darlington linear amplifier circuit with linear compensation Download PDFInfo
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- CN102324898A CN102324898A CN201110199055A CN201110199055A CN102324898A CN 102324898 A CN102324898 A CN 102324898A CN 201110199055 A CN201110199055 A CN 201110199055A CN 201110199055 A CN201110199055 A CN 201110199055A CN 102324898 A CN102324898 A CN 102324898A
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Abstract
The invention provides a broadband automatic biasing Darlington linear amplifier circuit with linear compensation, which is characterized in that a Darlington structure is formed by three crystal triodes (Q1, Q2 and Q3); a common-emitter common-base Darlington backward-stage extended high-frequency broadband is formed by two crystal triodes; one crystal triode (Q5) is connected between a collector of one crystal triode (Q3) and a base of the other crystal triode (Q2) in series, which forms a linear compensation circuit to improve the degree of linearity after 2GHz; the base of the crystal triode (Q5) is connected with the collector of the crystal triode (Q5) in the compensation circuit and the base and collector of the crystal triode (Q5) can be connected with an output end of the Darlington structure by a resistor; and an emitter of the crystal triode (Q5) is connected with a common-emitter common-base point of the Darlington. The amplifier has the advantages that the common-emitter common-base Darlington backward-stage extended high-frequency broadband is formed, the linear IP3 (third order intermodulation) is improved; gains are smooth till 4.5GHz and the variation of +/-1dB can be kept; and gain requirements of different frequency points can be met, the linear compensation circuit can improve the degree of linearity after 2GHz, and OIP3 (third-order intercept point) at the same point can be improved by 4-5dB.
Description
Technical field
The present invention is a kind of high-performance InGaP hetero-junction bipolar transistor microwave monolithic amplifier.A kind of broadband automatic biasing Darlington linear amplifier circuit of linear compensation particularly.Belong to the microwave monolithic integrated circuit field.
Background technology
The darlington amplifier bandwidth, gain stabilization, size is little, encapsulates easyly, is easy to characteristics such as cascade.Darlington gain amplifier technology has been widely used in the RF Wireless-wire and has used.The bandwidth and the power index of comprehensive low-power amplifier; To adopt InGaP/GaAs HBT technology, circuit adopts darlington structure, and Amplifier Design is taken into account each frequency range of present mobile communication as far as possible; Adopt single power supply; Have good input, output stationary wave characteristic and flat gain characteristic, make amplifier except being used in TD-SCDMA, go for other communications bands.Under the prerequisite that guarantees properties of product and reliability, optimize chip design, reduce chip area, make product possess high as far as possible cost performance.Be two GSM of third-generation mobile communication system systems, narrowband CDMA system or the TDS-CDMA system used at present to a common requirement of base station power amplifier all be high linear.And require satisfying the high as far as possible power added efficiency of realization under the linear prerequisite that requires.Thereby in the circuit design process, take into full account high linear requirement how to satisfy power amplifier and realize high efficiency.
Summary of the invention
What the present invention proposed is a kind of broadband automatic biasing Darlington linear amplifier circuit of linear compensation, and based on the improved automatic biasing darlington amplifier of traditional darlington structure, its purpose is intended to improve gain flatness, improves the linear IP3 (third order intermodulation) of circuit.Form the bandwidth of level extended high frequency behind the Darlington of common-emitter common-base by two transistors,, improved linear characteristic through the linear compensation circuit structure Design.
Technical solution of the present invention: it is characterized in that the first transistor Q1, the second transistor Q2, the 3rd transistor Q3 form darlington structure; Promptly the base stage of the emitter of the first transistor Q1 and the second transistor Q2 is joined; The emitter of the collector electrode of the second transistor Q2 and the 3rd transistor Q3 joins; The collector electrode of the collector electrode of the 3rd transistor Q3 and the first transistor Q1 joins, and is made up of the bandwidth of level extended high frequency behind the Darlington of common-emitter common-base the second transistor Q2, the 3rd transistor Q3; Between the collector electrode of the 3rd transistor Q3 and the second transistor Q2 base stage, be connected in series the 5th transistor Q5 and improve the later linearity of 2GHz as linear compensation circuit; The base stage of the 5th transistor Q5 in this compensating circuit and collector electrode joins and receive the output of darlington structure through the 8th resistance R 8, the 5th transistor Q5 emitter is received the common-emitter common-base point of Darlington.
Advantage of the present invention: the present invention second transistor Q2, the 3rd transistor Q3 adopt the back level of cascode structure as darlington amplifier, have expanded bandwidth, improve third order intermodulation IP3 simultaneously.Until the 4.5GHz gain is all more smooth, the variable quantity of maintenance ± 1dB.Can satisfy the gain requirement of different frequent points.The present invention adopts the linear compensation circuit circuit to improve the later linearity of 2GHz on improved darlington structure.Compensating circuit is to the almost not influence of small-signal parameters such as the gain of circuit, standing wave, and is also very little to the influence of P1dB.To the linear characteristic obvious effect, the contrast of the input and output third order intermodulation of input and output third order intermodulation of the present invention and traditional structure.The OIP3 of same point improves 4 to 5 dB.Linear bandwidth is expanded 1GHz to 1.5GHz.
Description of drawings:
Accompanying drawing 2 is automatic biasing Darlington circuit structural representations of the present invention.
Accompanying drawing 3 is linear compensation automatic biasing darlington structure sketch mapes of the present invention.
Accompanying drawing 4a is the present invention and traditional darlington amplifier small signal gain contrast sketch map.
Accompanying drawing 4b is small signal gain of the present invention, input and output reflection loss sketch map.
Accompanying drawing 5 is the sketch mapes that concern of power output 1dB compression point of the present invention and frequency.
Accompanying drawing 6a is the present invention and traditional darlington amplifier output ip3 and frequency relation contrast sketch map.
Accompanying drawing 6b is the present invention and traditional darlington amplifier input ip3 and frequency relation contrast sketch map.
Embodiment
Contrast accompanying drawing 2, its structure are to adopt improved automatic biasing darlington structure.Form darlington structure by transistor Q1, transistor Q2, transistor Q3; Different with traditional darlington structure, the bandwidth of level extended high frequency behind the Darlington of transistor Q2, transistor Q3 composition common-emitter common-base in the dotted line block diagram as shown in Figure 2.Transistor Q2 can increase puncture voltage and the bandwidth of expanding darlington amplifier.As shown in Figure 4; The traditional structure gain reduces along with frequency increases gain gradually; Transistor Q2 of the present invention, transistor Q3 adopt the back level of cascode structure as darlington amplifier, have expanded bandwidth, improve the linearity (third order intermodulation point IP3) simultaneously.Until the 4.5GHz gain is all more smooth, the flatness of maintenance ± 1dB.Can satisfy the gain requirement of different frequent points.Like Fig. 4 a, the present invention and the contrast of traditional darlington amplifier small signal gain, zero is that the small signal gain of traditional darlington amplifier and the relation curve ◇ of frequency are the small signal gain of modified model automatic biasing darlington amplifier of the present invention and the relation curve of frequency.
Transistor BJTs described herein (bipolar junction transistors); HBTs (heterojunction bipolar transistors); DHBT (double heterojunction bipolar transistor), perhaps PHEMT (pseudomorphic high electron mobility transistor).All semiconductors comprise compound semiconductor III-V semiconductor, SiGe, InGaP, InP, GaAs.
Device is the standard HBT technology of foundry.
Claims (1)
1. the broadband automatic biasing Darlington linear amplifier circuit of a linear compensation; It is characterized in that first transistor (Q1), second transistor (Q2), the 3rd transistor (Q3) composition darlington structure; Promptly the base stage of the emitter of first transistor (Q1) and second transistor (Q2) is joined; The emitter of the collector electrode of second transistor (Q2) and the 3rd transistor (Q3) joins; The collector electrode of the collector electrode of the 3rd transistor (Q3) and first transistor (Q1) joins, and is made up of the bandwidth of level extended high frequency behind the Darlington of common-emitter common-base second transistor (Q2), the 3rd transistor (Q3); Between the collector electrode of the 3rd transistor (Q3) and second transistor (Q2) base stage, be connected in series the 5th transistor (Q5) and improve the later linearity of 2GHz as linear compensation circuit; The base stage of the 5th transistor (Q5) in this compensating circuit and collector electrode joins and receive the output of darlington structure through the 8th resistance (R8), the 5th transistor (Q5) emitter is received the common-emitter common-base point of Darlington.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199055A CN102324898A (en) | 2011-07-18 | 2011-07-18 | Broadband automatic biasing Darlington linear amplifier circuit with linear compensation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199055A CN102324898A (en) | 2011-07-18 | 2011-07-18 | Broadband automatic biasing Darlington linear amplifier circuit with linear compensation |
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| CN102324898A true CN102324898A (en) | 2012-01-18 |
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| CN201110199055A Pending CN102324898A (en) | 2011-07-18 | 2011-07-18 | Broadband automatic biasing Darlington linear amplifier circuit with linear compensation |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515539A (en) * | 2015-12-22 | 2016-04-20 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensating circuit and communication terminal |
| CN109194291A (en) * | 2018-09-06 | 2019-01-11 | 南京国博电子有限公司 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
| CN110365297A (en) * | 2019-08-07 | 2019-10-22 | 青海民族大学 | A kind of high-frequency high-power heterojunction bipolar transistor power amplifier |
| CN111756335A (en) * | 2020-07-01 | 2020-10-09 | 西安博瑞集信电子科技有限公司 | Radio frequency gain module amplifier chip |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706038A (en) * | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
-
2011
- 2011-07-18 CN CN201110199055A patent/CN102324898A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706038A (en) * | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
| CN101651449A (en) * | 2009-09-03 | 2010-02-17 | 上海博为光电科技有限公司 | Optical input preamplifier for optical communication receiver |
Non-Patent Citations (1)
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| 丁华锋 等.: "0.1~4GHz达林顿-共射共基结构的增益模块", 《电讯技术》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105515539A (en) * | 2015-12-22 | 2016-04-20 | 上海唯捷创芯电子技术有限公司 | Method for improving linearity of radio frequency power amplifier, compensating circuit and communication terminal |
| CN105515539B (en) * | 2015-12-22 | 2018-08-21 | 上海唯捷创芯电子技术有限公司 | Improve method, compensation circuit and the communication terminal of linearity of radio-frequency power amplifier |
| US10833636B2 (en) | 2015-12-22 | 2020-11-10 | Shanghai Vanchip Technologies Co., Ltd. | Method for improving linearity of radio frequency power amplifier, compensation circuit and communications terminal |
| CN109194291A (en) * | 2018-09-06 | 2019-01-11 | 南京国博电子有限公司 | A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality |
| CN110365297A (en) * | 2019-08-07 | 2019-10-22 | 青海民族大学 | A kind of high-frequency high-power heterojunction bipolar transistor power amplifier |
| CN111756335A (en) * | 2020-07-01 | 2020-10-09 | 西安博瑞集信电子科技有限公司 | Radio frequency gain module amplifier chip |
| CN111756335B (en) * | 2020-07-01 | 2021-10-26 | 西安博瑞集信电子科技有限公司 | Radio frequency gain module amplifier chip |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
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Application publication date: 20120118 |