CN102034919A - High-brightness high-power light-emitting diode (LED) and manufacturing method thereof - Google Patents
High-brightness high-power light-emitting diode (LED) and manufacturing method thereof Download PDFInfo
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- CN102034919A CN102034919A CN2010105091102A CN201010509110A CN102034919A CN 102034919 A CN102034919 A CN 102034919A CN 2010105091102 A CN2010105091102 A CN 2010105091102A CN 201010509110 A CN201010509110 A CN 201010509110A CN 102034919 A CN102034919 A CN 102034919A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention relates to the technical field of LEDs, in particular to a high-brightness high-power light-emitting diode (LED) and a manufacturing method thereof. The LED comprises a substrate and crystal particles. A nano glass layer is coated on the inner surface of the substrate; a tin indium oxide micro lens covers on the substrate; fluorescent glue is arranged between the tin indium oxide micro lens and the crystal particles; the outer side surface of the tin indium oxide micro lens is provided with an optical control film; before being fixed on the substrate, the crystal particles are evenly dispersed in a volatilizable solvent firstly and then are injected into the substrate; baking is carried out to volatilize the volatilizable solvent; nano glass is evenly deposited on the inner surface of the substrate to form a nano glass layer; the tin indium oxide micro lens covers on the substrate after die bonding is ended, and the optical control film is pasted or an optical film is plated. In the invention, the nano glass layer is used as a high-efficiency reflecting layer to improve the flux of light and reduce the light loss, and meanwhile, the tin indium oxide micro lens is utilized to convert a point light source into a surface light source to make light evenly distributed, and moreover, the light-emitting angle is controlled by matching with the optical control film, thereby effectively increasing the flux of light and improving the heat dissipation efficiency.
Description
Technical field:
The present invention relates to the LED technical field, refer in particular to high light large power LED and preparation method thereof.
Background technology:
LED is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light LEDs be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.LED changed the incandescent lamp tungsten filament luminous with the luminous principle of fluorescent lamp tricolor powder, utilize electroluminescence, have that light efficiency height, radiationless, life-span are long, an advantage of low-power consumption and environmental protection.A kind of traditional approach that forms white light LEDs is that blue light or ultraviolet chip excite the fluorescent material that is covering on chip, and the light stimulus fluorescent material that chip sends under electricity drives produces the visible light of other wave band, and the each several part colour mixture forms white light.Along with the continuous expansion that LED uses, also more and more higher to the luminous efficiency requirement of LED encapsulation, and luminous efficiency is the most important parameter of decision LED encapsulation.
At present, LED comprises substrate and crystal grain, crystal grain is fixedly mounted in the substrate, crystal grain connects the electrode of substrate by lead, its general way is earlier crystal grain to be fixed in the substrate, then two of lead is welded on respectively on crystal grain and the electrode of substrate, then fluorescence glue is injected in the substrate, baking at last makes the fluorescent glue water cure make product.But existing high-power LED encapsulation structure is complicated, is packaged with serious heat dissipation problem, and radiating efficiency is not good,, led chip can't effectively promote luminous flux, and also need use lens when wanting to take specific lighting angle, this encapsulating structure like this reduces yield, increases cost.Therefore, the luminous flux that how to improve LED encapsulation can solve heat dissipation problem simultaneously again becomes industry key issue anxious to be solved.
Summary of the invention:
Purpose of the present invention is exactly to provide a kind of high light large power LED that can increase luminous flux and improve radiating efficiency at the deficiency of prior art existence, the manufacture method of this high light large power LED also is provided, has been intended to solve the existing LED encapsulation problem that luminous flux is low, radiating efficiency is low.
To achieve these goals, the technical solution used in the present invention is:
High light large power LED, it includes substrate and crystal grain, crystal grain is fixedly mounted in the substrate, crystal grain connects the electrode of substrate by lead, the inner surface of substrate is coated with the nano-glass layer, be covered with the tin indium oxide lenticule that masks crystal grain on the substrate, tin indium oxide lenticule and intergranule are provided with fluorescent glue, and the lenticular outer surface of tin indium oxide is provided with light control film.
The thickness of described nano-glass layer is 1～3 μ m.
Described lead is a gold thread.
Described light control film thickness is 50～100nm.
The present invention also discloses the manufacture method of high light large power LED, may further comprise the steps:
A, nano-glass is dispersed in the volatilizable solvent, makes nano-glass solution;
B, substrate is carried out the surface treatment of electricity slurry;
C, red glue is put in the specific region of substrate;
D, nano-glass solution is injected in the substrate;
E, baking make the volatilizable solvent evaporates in the nano-glass solution, and the nano-glass uniform deposition forms the nano-glass layer in the inner surface of substrate;
F, remove red glue;
G, crystal grain is fixed in the substrate;
H, two of lead is welded on respectively on crystal grain and the electrode of substrate;
I, fluorescence glue is injected in the substrate;
J, the tin indium oxide lenticule is placed on the substrate;
K, baking;
L, on the tin indium oxide lenticule, paste light control film or plating blooming.
Substrate toasted under 100～150 ℃ temperature 5～15 minutes in the step e.
Volatilizable solvent described in the steps A is an alcohols solvent, and as methyl alcohol, ethanol etc., wherein nano-glass solution comprises following components in weight percentage:
Alcohol 99～99.9%
Nano-glass 0.1～1%
Dispersant 0～0.01%.
Described dispersant is a nanoscale aliphatic acid.
The thickness of light control film described in the step L is 50～100nm.
Beneficial effect of the present invention is: the present invention includes substrate and crystal grain, crystal grain is fixedly mounted in the substrate, crystal grain connects the electrode of substrate by lead, the inner surface of substrate is coated with the nano-glass layer, be covered with the tin indium oxide lenticule that masks crystal grain on the substrate, tin indium oxide lenticule and intergranule are provided with fluorescent glue, the lenticular outer surface of tin indium oxide is provided with light control film, before crystal grain is fixed on substrate, to be dispersed in the volatilizable solvent earlier, make nano-glass solution, then nano-glass solution is injected in the substrate, baking makes the volatilizable solvent evaporates in the nano-glass solution, the nano-glass uniform deposition forms the nano-glass layer in the inner surface of substrate, Gu behind the crystalline substance tin indium oxide lenticule is placed on the substrate, and on the tin indium oxide lenticule, paste light control film or plate blooming, it is efficient reflector that the present invention utilizes the nano-glass layer, promote luminous flux, reduce light loss, utilize the tin indium oxide lenticule that point-source of light is become area source simultaneously, light is evenly distributed, cooperate light control film control rising angle again, effectively increase luminous flux, and improve radiating efficiency.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Embodiment:
The present invention is further illustrated below in conjunction with accompanying drawing, sees shown in Figure 1:
High light large power LED includes substrate 1 and crystal grain 2, and crystal grain 2 is fixedly mounted in the substrate 1, and crystal grain 2 is by the electrode of lead 3 connection substrates 1, and lead 3 is a gold thread, and resistance is low, reduces caloric value.The inner surface of substrate 1 is coated with nano-glass layer 4, and the thickness of nano-glass layer 4 is 1～3 μ m, and thickness has preferable combination property when being 1～3 μ m, as being 1 μ m, 1.5 μ m, 2 μ m, 3 μ m etc., is preferably 2 μ m.Be covered with the nanometer grade indium tin oxide lenticule 5 that masks crystal grain 2 on the substrate 1, be provided with fluorescent glue 7 between tin indium oxide lenticule 5 and the crystal grain 2, the outer surface of tin indium oxide lenticule 5 is provided with light control film 6, light control film 6 thickness are 50～100nm, as being 50nm, 75nm, 90nm, 100nm etc., be preferably 75nm.
Adopt the manufacture method of the high light large power LED of above-mentioned encapsulating structure, may further comprise the steps:
1, nano-glass is dispersed in the volatilizable solvent, makes nano-glass solution;
2, substrate 1 is carried out the surface treatment of electricity slurry;
3, with point gum machine red glue is put in the specific region of substrate 1, this specific region is the zone of electrode;
4, with point gum machine just nano-glass solution click and enter in the substrate 1;
5, substrate 1 toasted under 100～150 ℃ temperature 5～15 minutes, made the volatilizable solvent evaporates in the nano-glass solution, and the nano-glass uniform deposition forms nano-glass layer 4 in the inner surface of substrate 1;
6, remove red glue;
7, crystal grain 2 is fixed in the substrate 1;
8, two of lead 3 is welded on crystal grain 2 and substrate 1 electrode respectively;
9, fluorescent material is added the glue mixing and be equipped to fluorescence glue;
10, fluorescence glue is clicked and entered in the substrate 1 with point gum machine;
11, with covering the lens machine automatically tin indium oxide lenticule 5 is placed on the substrate 1;
12, baking makes the fluorescent glue water cure;
13, on tin indium oxide lenticule 5, paste light control film 6 or plating blooming.
Wherein, volatilizable solvent is an alcohols solvent, and nano-glass solution comprises the component of weight fraction: methyl alcohol 98.99, nano-glass 1, nanoscale aliphatic acid 0.01.
The present invention is before being fixed on substrate 1 with crystal grain 2, to be dispersed in the volatilizable solvent earlier, make nano-glass solution, then nano-glass solution is injected in the substrate 1, baking makes the volatilizable solvent evaporates in the nano-glass solution, the nano-glass uniform deposition forms nano-glass layer 4 in the inner surface of substrate 1, Gu behind the crystalline substance tin indium oxide lenticule 5 is placed on the substrate 1, and on tin indium oxide lenticule 5, paste light control film 6 or plate blooming, the present invention utilizes nano-glass layer 4 to be efficient reflector, promote luminous flux, reduce light loss, utilize tin indium oxide lenticule 5 that point-source of light is become area source simultaneously, light is evenly distributed, cooperate light control film 6 control rising angles again, can effectively increase luminous flux, and improve radiating efficiency to 160-180Lm.
As different from Example 1, nano-glass solution comprises the component of weight fraction: ethanol 99, nano-glass 0.99, nanoscale aliphatic acid 0.01.
Embodiment 3
As different from Example 1, nano-glass solution comprises the component of weight fraction: methyl alcohol 99.9, nano-glass 0.1.
As different from Example 1, nano-glass solution comprises the component of weight fraction: ethanol 99.89, nano-glass 0.1, nanoscale aliphatic acid 0.01.
Certainly, the above only is preferred embodiment of the present invention, so all equivalences of doing according to the described structure of patent claim of the present invention, feature and principle change or modify, is included in the patent claim of the present invention.
Claims (9)
1. high light large power LED, it includes substrate and crystal grain, crystal grain is fixedly mounted in the substrate, crystal grain connects the electrode of substrate by lead, it is characterized in that: the inner surface of described substrate is coated with the nano-glass layer, be covered with the tin indium oxide lenticule that masks crystal grain on the substrate, tin indium oxide lenticule and intergranule are provided with fluorescent glue, and the lenticular outer surface of tin indium oxide is provided with light control film.
2. high light large power LED according to claim 1 is characterized in that: the thickness of described nano-glass layer is 1～3 μ m.
3. high light large power LED according to claim 1 is characterized in that: described lead is a gold thread.
4. high light large power LED according to claim 1 is characterized in that: described light control film thickness is 50～100nm.
5. the manufacture method of high light large power LED is characterized in that, may further comprise the steps:
A, nano-glass is dispersed in the volatilizable solvent, makes nano-glass solution;
B, substrate is carried out the surface treatment of electricity slurry;
C, red glue is put in the specific region of substrate;
D, nano-glass solution is injected in the substrate;
E, baking make the volatilizable solvent evaporates in the nano-glass solution, and the nano-glass uniform deposition forms the nano-glass layer in the inner surface of substrate;
F, remove red glue;
G, crystal grain is fixed in the substrate;
H, two of lead is welded on respectively on crystal grain and the electrode of substrate;
I, fluorescence glue is injected in the substrate;
J, the tin indium oxide lenticule is placed on the substrate;
K, baking;
L, on the tin indium oxide lenticule, paste light control film or plating blooming.
6. the manufacture method of high light large power LED according to claim 5, it is characterized in that: substrate toasted under 100～150 ℃ temperature 5～15 minutes in the step e.
7. the manufacture method of high light large power LED according to claim 5, it is characterized in that: volatilizable solvent described in the steps A is an alcohols solvent, and wherein nano-glass solution comprises following components in weight percentage:
Alcohol 99～99.9%
Nano-glass 0.1～1%
Dispersant 0～0.01%.
8. the manufacture method of high light large power LED according to claim 7, it is characterized in that: described dispersant is a nanoscale aliphatic acid.
9. according to the manufacture method of any described high light large power LED of claim 5-8, it is characterized in that: the thickness of light control film described in the step L is 50～100nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105091102A CN102034919A (en) | 2010-10-15 | 2010-10-15 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| CN2011103031224A CN102361056A (en) | 2010-10-15 | 2011-09-30 | High brightness large power light emitting diode and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010105091102A CN102034919A (en) | 2010-10-15 | 2010-10-15 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
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| CN102034919A true CN102034919A (en) | 2011-04-27 |
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| CN2010105091102A Pending CN102034919A (en) | 2010-10-15 | 2010-10-15 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| CN2011103031224A Pending CN102361056A (en) | 2010-10-15 | 2011-09-30 | High brightness large power light emitting diode and manufacture method thereof |
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| CN102222665A (en) * | 2011-06-14 | 2011-10-19 | 符建 | Integrated LED (light emitting diode) module with thin fly's-eye lens |
| CN102324459A (en) * | 2010-10-15 | 2012-01-18 | 广东昭信灯具有限公司 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
| CN102361056A (en) * | 2010-10-15 | 2012-02-22 | 广东昭信灯具有限公司 | High brightness large power light emitting diode and manufacture method thereof |
| CN104379987A (en) * | 2012-08-02 | 2015-02-25 | 日亚化学工业株式会社 | Wavelength conversion device |
| CN108011006A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of method for packaging white LED |
| CN110050223A (en) * | 2016-12-14 | 2019-07-23 | 亮锐控股有限公司 | Light-switching device |
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2010
- 2010-10-15 CN CN2010105091102A patent/CN102034919A/en active Pending
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- 2011-09-30 CN CN2011103031224A patent/CN102361056A/en active Pending
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| CN102324459A (en) * | 2010-10-15 | 2012-01-18 | 广东昭信灯具有限公司 | Light-emitting diode (LED) lamp package structure and preparation method thereof |
| CN102361056A (en) * | 2010-10-15 | 2012-02-22 | 广东昭信灯具有限公司 | High brightness large power light emitting diode and manufacture method thereof |
| CN102222665A (en) * | 2011-06-14 | 2011-10-19 | 符建 | Integrated LED (light emitting diode) module with thin fly's-eye lens |
| CN102222665B (en) * | 2011-06-14 | 2013-01-23 | 符建 | Integrated LED (light emitting diode) module with thin fly's-eye lens |
| CN104379987A (en) * | 2012-08-02 | 2015-02-25 | 日亚化学工业株式会社 | Wavelength conversion device |
| CN104379987B (en) * | 2012-08-02 | 2017-07-28 | 日亚化学工业株式会社 | Wavelength converter |
| CN110050223A (en) * | 2016-12-14 | 2019-07-23 | 亮锐控股有限公司 | Light-switching device |
| CN110050223B (en) * | 2016-12-14 | 2022-05-24 | 亮锐控股有限公司 | Light conversion device |
| CN108011006A (en) * | 2017-11-28 | 2018-05-08 | 西安科锐盛创新科技有限公司 | A kind of method for packaging white LED |
| CN108011006B (en) * | 2017-11-28 | 2020-06-30 | 广州市安亿仕电子科技有限公司 | White light LED packaging method |
| CN113203055A (en) * | 2021-05-11 | 2021-08-03 | 吴远 | Waterproof lamp strip capable of improving lumen grade of lamp strip |
| CN113203055B (en) * | 2021-05-11 | 2024-01-19 | 东莞市百形科技有限公司 | Waterproof lamp strip for improving lumen level of lamp strip |
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| CN102361056A (en) | 2012-02-22 |
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Owner name: GUANGDONG REAL FAITH LIGHTING CO., LTD. Free format text: FORMER OWNER: CHEN LIN Effective date: 20111012 |
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Effective date of registration: 20111012 Address after: 528251 Guangdong Province, Foshan City Nanhai Pingzhou Shawei Industrial District South Street No. 21 Applicant after: Guangdong Real Faith Lighting Co., Ltd. Address before: 523000 Guangdong Province, Dongguan City Wancheng District BBK District 8 Building No. 88 Applicant before: Chen Lin |
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Open date: 20110427 |