CN102324392A - 一种防氧化的铜基键合丝的制备工艺 - Google Patents
一种防氧化的铜基键合丝的制备工艺 Download PDFInfo
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- CN102324392A CN102324392A CN201110317098A CN201110317098A CN102324392A CN 102324392 A CN102324392 A CN 102324392A CN 201110317098 A CN201110317098 A CN 201110317098A CN 201110317098 A CN201110317098 A CN 201110317098A CN 102324392 A CN102324392 A CN 102324392A
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- copper
- gold
- bonding wire
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- bonding wires
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45644—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201110317098XA CN102324392B (zh) | 2011-10-19 | 2011-10-19 | 一种防氧化的铜基键合丝的制备工艺 |
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CN201110317098XA CN102324392B (zh) | 2011-10-19 | 2011-10-19 | 一种防氧化的铜基键合丝的制备工艺 |
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CN102324392A true CN102324392A (zh) | 2012-01-18 |
CN102324392B CN102324392B (zh) | 2013-03-27 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104353669A (zh) * | 2014-09-12 | 2015-02-18 | 北京科技大学 | 一种高性能金包铜键合微丝的制备方法 |
CN104465587A (zh) * | 2014-12-04 | 2015-03-25 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀镍铜合金丝及其制作方法 |
CN104716118A (zh) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀钯铜键合丝及其制作方法 |
CN104134645B (zh) * | 2014-06-30 | 2017-06-27 | 厦门润晶光电集团有限公司 | 一种封装导线材料结构及其加工方法 |
CN107497868A (zh) * | 2017-09-01 | 2017-12-22 | 浙江毅美材料有限公司 | 一种钢丝的拉拔方法 |
CN109449133A (zh) * | 2018-10-20 | 2019-03-08 | 深圳粤通应用材料有限公司 | 一种铜镀纯镍键合丝及其制备方法 |
CN111276460A (zh) * | 2015-05-26 | 2020-06-12 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
CN114005807A (zh) * | 2021-10-09 | 2022-02-01 | 江西蓝微电子科技有限公司 | 一种镀金钯铜基键合丝及其制备方法 |
Citations (4)
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CN101626006A (zh) * | 2009-07-09 | 2010-01-13 | 烟台一诺电子材料有限公司 | 柔性键合铜丝及其制备方法 |
CN101667566A (zh) * | 2009-09-20 | 2010-03-10 | 宁波康强电子股份有限公司 | 一种银基覆金的键合丝线及其制造方法 |
WO2010087053A1 (ja) * | 2009-01-27 | 2010-08-05 | タツタ システム・エレクトロニクス株式会社 | ボンディングワイヤ |
CN201975388U (zh) * | 2010-12-15 | 2011-09-14 | 广州佳博金丝科技有限公司 | 防氧化铜基键合丝 |
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2011
- 2011-10-19 CN CN201110317098XA patent/CN102324392B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010087053A1 (ja) * | 2009-01-27 | 2010-08-05 | タツタ システム・エレクトロニクス株式会社 | ボンディングワイヤ |
CN101626006A (zh) * | 2009-07-09 | 2010-01-13 | 烟台一诺电子材料有限公司 | 柔性键合铜丝及其制备方法 |
CN101667566A (zh) * | 2009-09-20 | 2010-03-10 | 宁波康强电子股份有限公司 | 一种银基覆金的键合丝线及其制造方法 |
CN201975388U (zh) * | 2010-12-15 | 2011-09-14 | 广州佳博金丝科技有限公司 | 防氧化铜基键合丝 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134645B (zh) * | 2014-06-30 | 2017-06-27 | 厦门润晶光电集团有限公司 | 一种封装导线材料结构及其加工方法 |
CN104353669A (zh) * | 2014-09-12 | 2015-02-18 | 北京科技大学 | 一种高性能金包铜键合微丝的制备方法 |
CN104353669B (zh) * | 2014-09-12 | 2016-08-17 | 北京科技大学 | 一种高性能金包铜键合微丝的制备方法 |
CN104465587A (zh) * | 2014-12-04 | 2015-03-25 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀镍铜合金丝及其制作方法 |
CN104716118A (zh) * | 2015-03-02 | 2015-06-17 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀钯铜键合丝及其制作方法 |
CN104716118B (zh) * | 2015-03-02 | 2017-12-15 | 安徽华晶微电子材料科技有限公司 | 一种极微细镀钯铜键合丝及其制作方法 |
CN111276460A (zh) * | 2015-05-26 | 2020-06-12 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
CN111276460B (zh) * | 2015-05-26 | 2021-09-14 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
CN107497868A (zh) * | 2017-09-01 | 2017-12-22 | 浙江毅美材料有限公司 | 一种钢丝的拉拔方法 |
CN107497868B (zh) * | 2017-09-01 | 2018-12-18 | 浙江毅美材料有限公司 | 一种钢丝的拉拔方法 |
CN109449133A (zh) * | 2018-10-20 | 2019-03-08 | 深圳粤通应用材料有限公司 | 一种铜镀纯镍键合丝及其制备方法 |
CN114005807A (zh) * | 2021-10-09 | 2022-02-01 | 江西蓝微电子科技有限公司 | 一种镀金钯铜基键合丝及其制备方法 |
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CN102324392B (zh) | 2013-03-27 |
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Denomination of invention: Preparation of copper based bonding wire with anti oxidation property Effective date of registration: 20200929 Granted publication date: 20130327 Pledgee: Guangzhou Caold financing Company limited by guarantee Pledgor: GUANGDONG JIABO ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2020980006621 |
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Date of cancellation: 20221115 Granted publication date: 20130327 Pledgee: Guangzhou Caold financing Company limited by guarantee Pledgor: GUANGDONG JIABO ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2020980006621 |