CN102315167B - Wide visual angle LCD array substrate manufacturing method - Google Patents
Wide visual angle LCD array substrate manufacturing method Download PDFInfo
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Abstract
The invention provides a wide visual angle LCD (liquid crystal display) array substrate manufacturing method. The method comprises the following steps: providing a substrate, and forming a transparent conductive film and a grid metal layer on the substrate in order; pasting a light-sensitive material on the substrate, carrying out exposure and development by using a half-toning mask plate, and forming a light-sensitive material figure with different thicknesses on the substrate; carrying out etching on the substrate to form a first transparent electrode; carrying out stripping on the substrate forming the transparent electrode, removing the light-sensitive material and forming a grid; forming an active layer, a source drain electrode, a protective layer and a second transparent electrode in order on the substrate which forms the first transparent electrode and the grid.
Description
Technical field
The present invention relates to the display manufacture technology field, relate to a kind of wide-angle liquid crystal display array base palte manufacture method in particular.
Background technology
LCD is a kind of display device of planar ultra-thin, have low radiation, advantage such as power consumption is little and volume is little, the LCD of wide viewing angle particularly, because its color is not subjected to the restriction at visual angle, from all angles, its color change is very little, and the display that therefore is widely used in television set, computer, mobile phone etc. is made the field.
But because wide-angle liquid crystal display involves great expense, particularly make in the technology of LCD (Liquid Crystal Display) array substrate, therefore how to reduce the cost of manufacture of array base palte, become problem demanding prompt solution.
In the existing wide-angle liquid crystal display array base palte manufacture method; usually adopt six road mask fabrication technologies; the first road mask fabrication technology is sputter gate metal film on substrate; then through overexposure; develop; lithographic process such as etching are produced grid; the second road mask fabrication technology is to be manufactured with sputter transparent conductive film on the substrate of grid; through overexposure; develop; technologies such as etching are made a transparency electrode; the 3rd road mask fabrication technology is for to make active layer at the substrate that is manufactured with pixel electrode; the 4th road mask fabrication technology is used for making source-drain electrode; the 5th road mask fabrication technology is used for defining the protective layer pattern; make protective layer, form another transparency electrode by the 6th road mask fabrication at substrate then.
By said process as can be seen, existing wide-angle liquid crystal display array base palte manufacture method adopts six road mask fabrication technologies, and the making flow process is more, and fabrication cycle is long, thereby causes cost of manufacture higher.
Summary of the invention
In view of this, the invention provides a kind of manufacture method of wide-angle liquid crystal display array base palte, many in order to solve array base palte making flow process, cause the high problem of cost of manufacture.
For achieving the above object, the invention provides following technical scheme:
A kind of wide-angle liquid crystal display array base palte manufacture method, described method comprises:
One substrate is provided, on described substrate, forms transparent conductive film and gate metal layer successively;
Be coated with light-sensitive material at described substrate, use intermediate tone mask version is exposed and is developed, and forms the light-sensitive material figure of different-thickness;
On the substrate of the light-sensitive material figure of described formation different-thickness, carry out etching and form first transparency electrode;
Substrate to described formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid;
Make active layer, source-drain electrode, protective layer and second transparency electrode at the substrate of described formation first transparency electrode and grid successively.
Preferably, the grid of counterpart substrate making zone is light tight zone on the described intermediate tone mask version, and it is the part transmission region that first transparency electrode is made the zone, and other zones are transmission region, then,
The light-sensitive material figure of the different-thickness of described formation is specifically: the light-sensitive material that the substrate grid is made the zone all keeps, and first transparency electrode is made regional light-sensitive material and partly kept, and other regional light-sensitive materials are removed.
Preferably, on the substrate of described light-sensitive material figure at described formation different-thickness, carry out etching and form first transparency electrode and comprise:
By gate metal layer and the transparent conductive film on other zones of etching technics removal substrate, and first transparency electrode is made the light-sensitive material on the zone;
Remove first transparency electrode by etching technics and make gate metal layer on the zone, form first transparency electrode.
Preferably, described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define first etching parameters and carry out dry etching, remove the gate metal layer on other zones of substrate, described first etching parameters comprises that first selects ratio;
Define second etching parameters and carry out dry etching, remove the light-sensitive material that other regional transparent conductive films of substrate and first transparency electrode are made the zone, described second etching parameters comprises that second selects ratio.
Preferably, described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Carry out wet etching, remove the gate metal layer on other zones of substrate;
Define second etching parameters and carry out dry etching, first transparent conductive film on other zones of removal substrate and first transparency electrode are made the light-sensitive material on the zone.
Preferably, described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define the 3rd etching parameters and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and the light-sensitive material in first transparency electrode making zone, described the 3rd etching parameters comprises that the 3rd selects ratio.
Preferably, remove first transparency electrode by etching technics and make gate metal layer on the zone, form first transparency electrode and be specially:
Carry out wet etching, remove the gate metal layer on described first transparency electrode making zone, form first transparency electrode.
Preferably, remove the gate metal layer that first transparency electrode is made the zone by etching technics, form first transparency electrode and be specially:
Define the 4th etching parameters and carry out dry etching, remove the gate metal layer on first transparency electrode making zone, form first transparency electrode, described the 4th etching parameters comprises that the 4th selects ratio.
Preferably, described substrate to described formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid and is specially:
Grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes light-sensitive material on the zone, forms grid.
Preferably, describedly on described substrate, form transparent conductive film successively and gate metal layer is specially:
Sputter transparent conductive film and gate metal successively on described substrate
Via above-mentioned technical scheme as can be known; compared with prior art; the invention provides a kind of wide-angle liquid crystal display array base palte manufacture method; transparent conductive film and gate metal layer are provided on the substrate that provides successively; utilize the intermediate tone mask version to expose; develop; method by dry etching or wet etching; form first transparency electrode and grid at substrate; make active layer at the substrate that forms first transparency electrode and grid afterwards; source-drain electrode; protective layer and second transparency electrode; first transparency electrode can be finished with being produced in the mask fabrication technology of grid; thereby make original six road mask fabrication technologies become five road mask fabrication technologies; reduce the making flow process of array base palte, and then reduced cost of manufacture.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is embodiments of the invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to the accompanying drawing that provides.
Fig. 1 is the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 1;
Structural representation when Fig. 2 exposes for substrate of the present invention;
Fig. 3 is substrate of the present invention structural representation after developing;
Fig. 4 is the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 2;
Fig. 5 is the structural representation after etching of substrate of the present invention;
Fig. 6 is substrate of the present invention structural representation after the etching again;
Fig. 7 forms structural representation after first transparency electrode for substrate of the present invention;
Fig. 8 forms structural representation behind first transparency electrode and the grid for substrate of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Just as stated in the Background Art, how to reduce the cost of manufacture of array base palte, be to need problem demanding prompt solution during present wide-angle liquid crystal display is made, the making flow process of existing wide-angle liquid crystal display array base palte comprises six road mask fabrication technologies, also be that each road mask fabrication technology all needs through gluing, exposure, develop, etching, the lithographic process of complexity such as remove photoresist forms required pattern, and if reduce the cost of each road mask fabrication technology, then can influence the quality problems of LCD, therefore, the inventor changes the thinking angle, original six road mask fabrication technologies are reduced to five road mask fabrication technologies, reduce the making flow process of substrate, and then reduced cost of manufacture.
One of main thought of the present invention can comprise: transparent conductive film and gate metal layer are provided on the substrate that provides simultaneously; pass through mask fabrication technology then one; it is lithographic process; comprise that steps such as utilizing the exposure of intermediate tone mask version, development, etching forms first transparency electrode and grid; and then make active layer, source-drain electrode, protective layer and second transparency electrode at the substrate that forms first transparency electrode and grid; reduce the substrate manufacture flow process, reduced cost of manufacture.
Referring to Fig. 1, show the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 1, can comprise:
Step 101 a: substrate is provided, on described substrate, forms transparent conductive film and gate metal layer successively.
Described substrate can be selected glass substrate, described transparent conductive film can select ITO (tin indium oxide), IZO (indium zinc oxide) or other to possess the material of transparent and electrically conductive performance, described gate metal layer can comprise one or more layers structure for being used for making the metal of grid.
Described substrate has arranged transparency electrode and has made zone and grid making zone.
At first substrate is cleaned, move into sputtering equipment sputter transparent conductive film and gate metal successively, wherein gate metal layer is positioned on the transparent conductive film, comprises one deck or multilayer.
Need to prove that form transparent conductive film and gate metal layer at substrate and do not limit mode with sputter, it can also be evaporation or other film-forming process.
Step 102: be coated with light-sensitive material at described substrate, use intermediate tone mask version is exposed and is developed, and forms the light-sensitive material figure of different-thickness.
Light-sensitive material can form required figure through exposure imaging in photoetching process, be used for making various electrode patterns.For example can select photoresist for use, described light-sensitive material can be positivity, also can be negativity, specifically defines according to the production flow process is different.
Spin coating photoresist on the substrate after the film forming utilizes the intermediate tone mask version to expose, and can form the light-sensitive material figure of different-thickness after the development, and the intermediate tone mask version requires to arrange according to nature difference and the subsequent etching of light-sensitive material.Present embodiment is example with the light-sensitive material of positivity, other zones of removing grid making zone and first transparency electrode making zone on the definition substrate are the 3rd zone, then, described intermediate tone mask version is light tight zone for the place that makes the zone at the grid of counterpart substrate, the place that corresponding first transparency electrode is made the zone is the part transmission region, the place in corresponding the 3rd zone is the mask version of transmission region, light tight location exposure light can not pass through, should can not remove by the zone light-sensitive material after the development, transmission region place exposure light can pass through, light-sensitive material that should the zone after the development is all removed, the part transmission region is that the mask version is carried out the GTG design, make exposure light partly to pass through, the light-sensitive material in development bonnet zone is partly removed, therefore, utilize the intermediate tone mask version to expose and develop after, can form the light-sensitive material figure of different-thickness.
After Fig. 2 shows the substrate film forming, structural representation when exposing, comprise substrate 201, be positioned at transparent conductive film 202 on the substrate 201, be positioned at the gate metal layer 203 on the transparent conductive film 202, be coated on the light-sensitive material 204 on the gate metal layer 203, intermediate tone mask version 205, be used for exposure, wherein the grid of light tight regional 2051 counterpart substrates 201 is made the zone, first transparency electrode of part transmission region 2052 counterpart substrates 201 is made the zone, other zones of transmission region 2053 counterpart substrates, i.e. the 3rd zone.
Fig. 3 shows the structural representation after substrate develops, and as seen from Figure 3, utilizes intermediate tone mask 205 to expose, and namely forms the light-sensitive material figure of different-thickness after the development.
Step 103: on the substrate of the light-sensitive material figure of described formation different-thickness, carry out etching and form first transparency electrode.
After substrate after the film forming carried out exposure imaging, at first carry out etching and form first transparency electrode, etch away first transparency electrode by etching technics and make light-sensitive material and gate metal layer on the transparent conductive film in zone, form first transparency electrode, other zones have been etched away simultaneously, i.e. gate metal layer and transparent conductive film on the 3rd zone.
Concrete etching process has a detailed description after hereinafter.
Step 104: the substrate to described formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid.
At last, substrate is carried out demoulding again, remove remaining light-sensitive material, can form gate pattern.
Step 105: make active layer, source-drain electrode, protective layer and second transparency electrode at the substrate of described formation first transparency electrode and grid successively.
On the substrate of making first transparency electrode and grid, form active layer, source-drain electrode, protective layer and second transparency electrode at substrate successively through mask fabrication technologies such as gluing, exposure, development and etchings more respectively.Can finish the making of the array base palte of this LCD.The manufacture craft flow process of making active layer, source-drain electrode, protective layer and second transparency electrode is same as the prior art, does not repeat them here.
Wherein, described second transparency electrode is made as different electrodes with first transparency electrode according to different actual demand definition, when described first transparency electrode is pixel electrode, then described second transparency electrode is current electrode, when described first transparency electrode is current electrode, then described second transparency electrode is pixel electrode, described pixel electrode and current electrode, the pictorial pattern difference of its formation.
In the present embodiment, transparent conductive film and gate metal layer are provided on the substrate that provides simultaneously, pass through mask fabrication technology then one, it is lithographic process, comprise and utilize the exposure of intermediate tone mask version, development, etching etc. to form first transparency electrode and grid, first transparency electrode can be finished with being produced in the mask fabrication technology of grid, thereby make original six road mask fabrication technologies become five road mask fabrication technologies, reduce the making flow process of array base palte, thereby reduced the substrate manufacture cost.
Referring to Fig. 4, show the flow chart of a kind of wide-angle liquid crystal display array base palte of the present invention manufacture method embodiment 2, can comprise:
Step 401 a: substrate is provided, on described substrate, forms transparent conductive film and gate metal layer successively.
Step 402: be coated with light-sensitive material at described substrate, use intermediate tone mask version is exposed and is developed, and forms the light-sensitive material figure of different-thickness.
The operation of step 401 and step 402 is identical with step 102 with method embodiment 1 step 101, does not repeat them here.
Step 403: by gate metal layer and the transparent conductive film on other zones of etching technics removal substrate, and first transparency electrode is made the light-sensitive material on the zone.
Wherein, as an embodiment, the operation of described step 403 can specifically comprise:
1a: define first etching parameters and carry out dry etching, remove other regional gate metal layer of substrate.
First etching parameters comprises that first selects ratio, select than being a important parameter when carrying out dry etching, ratio for the etch rate of different materials, etch rate is the degree of depth of unit interval internal corrosion, because the etch rate difference of different materials, material thickness is also different, therefore can define different selection ratios.
Because dry etching is wished the part of etching except meeting etches away, also can the part of not wishing etching be caused damage, therefore in the present embodiment, need the suitable selection ratio of definition, guarantee that dry etching can only etch away other regional gate metal layer of substrate fully, and the transparent conductive film on other zones, and grid is made light-sensitive material on zone and first transparency electrode and can be etched or be etched sub-fraction.
In described first etching parameters first selected than referring to: gate metal layer etch rate/transparency electrode etch rate, and, gate metal etch rate/light-sensitive material etch rate.
Therefore select the first suitable selection than carrying out dry etching, can remove the gate metal layer on other zones of substrate fully.And for the transparent conductive film on other zones, and the light-sensitive material that grid is made on zone and first transparency electrode making zone can not remove fully, still can keep.
Wherein, described other zones are the 3rd zone of definition among the method embodiment 1.
1b: define second etching parameters and carry out dry etching, remove the light-sensitive material that other regional transparent conductive films of substrate and first transparency electrode are made the zone.
Described second etching parameters comprises that second selects ratio.
Step 1b continues to adopt dry etching, defines the second suitable selection ratio, and described second selects than referring to: transparency electrode etch rate/gate metal layer etch rate, and, transparency electrode etch rate/light-sensitive material etch rate.
Select than carrying out dry etching according to second in this second etching parameters, thereby make it possible to get rid of the transparent conductive film on other zones of substrate, get rid of the light-sensitive material on first transparency electrode making zone simultaneously.
Need to prove, defining first etching parameters and second etching parameters is to wish to be etched away part separately according to each rete and light-sensitive material, do not wish that the part that is etched away defines, after satisfied etching parameters according to definition is carried out dry etching, can etch away the material that hope is etched away, keep and not wish the material that is etched away, the pattern that formation need obtain also will be considered the factors such as thickness, material of each rete and light-sensitive material.
Also need to prove, it is to comprise selecting ratio that described first etching parameters and second etching parameters have more than, other technological parameters that it can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.Fig. 5 shows substrate through behind the step 1a, namely removes the structural representation after other regional gate metal layer.
Fig. 6 namely removes the structural representation after other regional transparent conductive films and first transparency electrode are made the light-sensitive material in zone after showing substrate process step 1b.
Wherein, as another embodiment, the operation of described step 403 can also specifically comprise:
2a: carry out wet etching, remove other regional gate metal layer of substrate.
Remove the method that other regional gate metal layer of substrate can also adopt wet etching, wet etching only can be got rid of the material that hope is etched away, and can not exert an influence to other regional retes, therefore, utilize wet etching, can etch away the gate metal layer on other zones fully.Through the board structure schematic diagram behind the step 2a also as shown in Figure 5, be that the thickness of light-sensitive material on the substrate is possibly greater than the thickness after the process step 1a etching, because the wet etching of this step only can be got rid of the gate metal layer on other zones, and can not exert an influence for light-sensitive material.
Described wet etching is the film etching processing of utilizing chemical liquid to carry out, needs to consider the selection of etching soup kind, the parameters such as concentration, etching temperature and time of etching soup.
2b: define second etching parameters and carry out dry etching, remove first transparent conductive film and first transparency electrode in other zones of substrate and make the light-sensitive material in zone.Through the board structure schematic diagram after the step 2b operation also as shown in Figure 6.
This step is identical with above-mentioned steps 1b operation, does not repeat them here.
Wherein, as another embodiment, the operation of described step 403 can also specifically comprise:
3a: define the 3rd etching parameters and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and first transparency electrode is made the light-sensitive material in zone.
Described the 3rd etching parameters comprises that the 3rd selects ratio.
The described the 3rd selects than referring to: gate metal layer etch rate/transparent conductive film etch rate, and gate metal layer etch rate/light-sensitive material etch rate, and, transparent conductive film etch rate/light-sensitive material etch rate.
The 3rd suitable selection ratio is set, carries out dry etching, make it possible to remove fully substrate other regional gate metal layer and transparent conductive films, and first transparency electrode is made the light-sensitive material in zone.
Need to prove, it is to comprise selecting ratio that described the 3rd etching parameters has more than, other technological parameters that can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.
Step 404: remove first transparency electrode by etching technics and make gate metal layer on the transparent conductive film in zone, form first transparency electrode.
Wherein, this step 404 can be specially by wet etching, removes the gate metal layer on the regional transparent conductive film of described first transparency electrode making, forms first transparency electrode.
Utilize wet etching can directly get rid of first transparency electrode and make gate metal layer on the regional transparent conductive film, make the zone in first transparency electrode and form first transparent electrode pattern, can not cause damage to the material on other zones and the gate metal making zone simultaneously.
Wherein, this step 404 can also be specially definition the 4th etching parameters and carry out dry etching, removes the gate metal layer that first transparency electrode is made the zone, forms first transparency electrode.
Described the 4th etching parameters comprises that the 4th selects ratio, and the described the 4th selects than referring to: gate metal layer etch rate/transparent conductive film etch rate, and gate metal layer etch rate/light-sensitive material etch rate.
The 4th suitable selection is set than carrying out dry etching, makes it possible to get rid of fully the gate metal layer on the regional transparent conductive film of first transparency electrode making.
Need to prove, described the 4th etching parameters does not just comprise yet selects ratio, other technological parameters that it can also comprise the etching power of etching machine and influence dry etching, for example: parameters such as etching gas kind, radio-frequency power, gas pressure intensity, electrode spacing.
Fig. 7 shows the structural representation that substrate forms first transparent electrode pattern.
Step 405: the grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes light-sensitive material on the zone, forms grid.
Through after the operation of step 401～step 404, substrate is made the zone in first transparency electrode and is formed first transparent electrode pattern, but make the zone at gate metal and also have light-sensitive material, therefore, need demoulding, described light-sensitive material is peeled off, finally made the zone at gate metal and form gate pattern.
Fig. 8 shows the structural representation behind the good transparency electrode of substrate manufacture and the grid.
Step 406: make active layer, source-drain electrode, protective layer and second transparency electrode at the substrate of described formation first transparency electrode and grid successively.
In the present embodiment, substrate is exposing, after the development, adopt the method for dry etching or wet etching, form first transparency electrode and grid at substrate, only adopt lithographic process one, can form transparency electrode and grid, therefore reduce the making flow process, and then can reduce the cost of manufacture of substrate.
In actual applications, LCDs is widely used in the high-tech products such as intelligent computer, panel computer, the wide viewing angle film LCDs of transverse electric field particularly, but because its construction cycle is long, processing procedure is many, make cost of manufacture very high, and employing embodiment of the present invention, can reduce the making flow process of array base palte in the wide-angle liquid crystal display, the minimizing of technological process, reduced cost of manufacture, and owing to manufacture craft when making each electrode is identical, thereby also reduced the frequent use of making apparatus.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
Need to prove, in this article, relational terms such as first and second grades only is used for an entity or operation are made a distinction with another entity or operation, and not necessarily requires or hint and have the relation of any this reality or in proper order between these entities or the operation.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby make and comprise that process, method, article or the equipment of a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or also be included as the intrinsic key element of this process, method, article or equipment.Do not having under the situation of more restrictions, the key element that is limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments herein.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the wideest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. wide-angle liquid crystal display array base palte manufacture method is characterized in that described method comprises:
One substrate is provided, on described substrate, forms transparent conductive film and gate metal layer successively;
Be coated with light-sensitive material at described substrate, use intermediate tone mask version is exposed and is developed, and forms the light-sensitive material figure of different-thickness;
On the substrate of the light-sensitive material figure of described formation different-thickness, carry out etching and form first transparency electrode;
Substrate to described formation transparency electrode carries out demoulding, removes light-sensitive material, forms grid;
Make active layer, source-drain electrode, protective layer and second transparency electrode at the substrate of described formation first transparency electrode and grid successively;
Wherein, the grid of counterpart substrate making zone is light tight zone on the described intermediate tone mask version, and it is the part transmission region that first transparency electrode is made the zone, and other zones are transmission region, then,
The light-sensitive material figure of the different-thickness of described formation is specifically: the light-sensitive material that the substrate grid is made the zone all keeps, and first transparency electrode is made regional light-sensitive material and partly kept, and other regional light-sensitive materials are removed;
And, on the substrate of described light-sensitive material figure at described formation different-thickness, carry out etching and form first transparency electrode and comprise:
By gate metal layer and the transparent conductive film on other zones of etching technics removal substrate, and first transparency electrode is made the light-sensitive material on the zone;
Remove first transparency electrode by etching technics and make gate metal layer on the zone, form first transparency electrode.
2. method according to claim 1 is characterized in that, and is described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define first etching parameters and carry out dry etching, remove the gate metal layer on other zones of substrate, described first etching parameters comprises that first selects ratio;
Define second etching parameters and carry out dry etching, remove the light-sensitive material that other regional transparent conductive films of substrate and first transparency electrode are made the zone, described second etching parameters comprises that second selects ratio.
3. method according to claim 1 is characterized in that, and is described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Carry out wet etching, remove the gate metal layer on other zones of substrate;
Define second etching parameters and carry out dry etching, first transparent conductive film on other zones of removal substrate and first transparency electrode are made the light-sensitive material on the zone.
4. method according to claim 1 is characterized in that, and is described by gate metal layer and transparent conductive film on other zones of etching technics removal substrate, and the light-sensitive material that first transparency electrode is made on the zone is specially:
Define the 3rd etching parameters and carry out dry etching, remove substrate other regional gate metal layer and transparent conductive films, and the light-sensitive material in first transparency electrode making zone, described the 3rd etching parameters comprises that the 3rd selects ratio.
5. method according to claim 1 is characterized in that, removes first transparency electrode by etching technics and makes gate metal layer on the zone, forms first transparency electrode and is specially:
Carry out wet etching, remove the gate metal layer on described first transparency electrode making zone, form first transparency electrode.
6. method according to claim 1 is characterized in that, removes the gate metal layer that first transparency electrode is made the zone by etching technics, forms first transparency electrode and is specially:
Define the 4th etching parameters and carry out dry etching, remove the gate metal layer on first transparency electrode making zone, form first transparency electrode, described the 4th etching parameters comprises that the 4th selects ratio.
7. according to each described method of claim 1～6, it is characterized in that described substrate to described formation transparency electrode carries out demoulding, remove light-sensitive material, form grid and be specially:
Grid to the substrate that forms first transparency electrode is made regional demoulding, removes grid and makes light-sensitive material on the zone, forms grid.
8. method according to claim 1 is characterized in that, describedly forms transparent conductive film successively and gate metal layer is specially on described substrate:
Sputter transparent conductive film and gate metal successively on described substrate.
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| CN104300002B (en) * | 2013-07-15 | 2017-05-31 | 信利半导体有限公司 | A kind of thin film transistor (TFT) and its manufacture method, photoetching process |
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