CN102269724A - Manufacturing method of oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of semiconductor gas-sensitive sensor - Google Patents
Manufacturing method of oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of semiconductor gas-sensitive sensor Download PDFInfo
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- CN102269724A CN102269724A CN201110170715A CN201110170715A CN102269724A CN 102269724 A CN102269724 A CN 102269724A CN 201110170715 A CN201110170715 A CN 201110170715A CN 201110170715 A CN201110170715 A CN 201110170715A CN 102269724 A CN102269724 A CN 102269724A
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Abstract
The invention relates to semiconductor gas-sensitive sensor technology, and discloses a manufacturing method of an oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of a semiconductor gas-sensitive sensor. The method comprises the following steps: firstly transferring a pattern of an interdigital electrode to a photoresist layer by a traditional photoetching process, etching a monocrystalline silicon substrate by a dry method with the photoresist layer as a mask so as to prepare oriented nano-fibers, sputtering a layer of Pt as a conducting layer on the fiber surfaces by a magnetron sputtering process, and finally peeling off the photoresist layer by a chemical method to obtain the oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of a semiconductor gas-sensitive sensor. Compared with traditional plate interdigital electrodes, the oriented nano-fiberized three-dimensional stereoscopic interdigital electrode contains silicon nanofibers with high specific surface areas which can effectively increase the surface area of the electrode without decreasing interdigital pair numbers, thus can effectively increase the sensitivity of the sensitive electrode, and solves the contradictory relation between the interdigital pair numbers of traditional plate interdigital electrodes and surface areas.
Description
Technical field
The invention belongs to the semiconductor gas sensor technology, particularly a kind of method for making of orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor.
Background technology
Compare with other gas sensor technology, the semiconductor gas sensor technology has incomparable advantage, and by extensive studies with among using., long service life little, highly sensitive as volume, cost is low, metering circuit is simple, easy to use, be convenient to integrated and multifunction, easily and microcomputer interface etc.; and be widely used in coal, chemical industry, petroleum industry, traffic monitoring, environmental protection, weather monitoring, medical treatment, every field such as control and family expenses warning automatically, toxic and harmful, flammable explosive gas, industrial gaseous waste and environmental pollution gas etc. are detected.
The big gordian technique of in the semiconductor gas sensor technology two, i.e. sensitive membrane and sensitive electrode.Wherein, the quality of sensitive electrode is directly connected to sensitivity, response time and the size of gas sensor element.Interdigital electrode can reduce device size effectively, and is easy to control the wherein size of sensitive resistance, can provide the sensitizing range of maximum for sensor again simultaneously, and be widely adopted.In addition, interdigital electrode also can be used for the heater circuit of gas sensor, for sensitive membrane provides stable working temperature.Its influence factor mainly comprises interdigital length and wide, interdigital logarithm and interdigital 's gap length.Experiment shows: interdigital surface area is big more, and promptly interdigital long more, wide more, interdigital logarithm is many more, and interdigital gap is more little, and device sensitivity is high more, and sensitive membrane resistance is more little, and heating power is also more little.
Yet there is following significant problem in the manufacture craft of traditional dull and stereotyped interdigital electrode:
(1) be subjected to the restriction of device size, interdigital surface area, interdigital logarithm all can not infinitely increase.And interdigital surface area and interdigital logarithm be again the parameter of two contradictions, an increase, and another must reduce.
(2) working temperature of semiconductor gas sensor is all higher, guarantee that it is operated in steady state (SS), must heat it, and traditional dull and stereotyped interdigital electrode power consumption is bigger.
Summary of the invention
The object of the present invention is to provide a kind of method for making of orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor, can be under the condition that does not reduce interdigital logarithm by the interdigital electrode that preparation method of the present invention makes, increase the surface area of electrode effectively, simultaneously, the 3 D stereo interdigital electrode of orientated nano fibersization can also be deep into the inside of sensitive membrane, thus the sensitivity that improves sensitive electrode effectively, reduce the resistance of sensitive membrane, reduce to add heat power consumption.
In order to achieve the above object, the present invention is by the following technical solutions:
1) the coating photoresist forms photoresist layer on monocrystal silicon substrate;
2) make the interdigital electrode mask plate by the parameter request of the interdigital electrode of required preparation, and be shielding with this interdigital electrode mask plate, utilize conventional lithography process, the etching photoresist layer obtains the photoresist interdigital electrode;
3) monocrystal silicon substrate that has the photoresist interdigital electrode is crossed in photoetching and carried out dry etching, on monocrystal silicon substrate, obtain directed nanofiber;
4) utilize magnetron sputtering technique at its surface sputtering one deck Pt metal level, as conductive electrode;
5) adopt the chemical stripping technology to peel off the photoresist layer of monocrystalline silicon surface at last, obtain the orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor.
The dry etching of described step 3) adopts C
4F
8: 180sccm (milliliter per minute), time: 10s; SF
6: 100sccm (milliliter per minute), the etching parameters of time: 7s obtains orientated nano fibers.
The magnetron sputtering technique of described step 4), the Ti layer that is first sputter 5-10nm are as transition bed, and the Pt layer of sputter 100nm is as electrode layer again.
The photoresist layer that described step 5) adopts the chemical stripping technology to remove on the monocrystal silicon substrate adopts the organic solvent-acetone dissolving and washes photoresist off.
The present invention adopts technologies such as photoetching and dry etching to produce the interdigital electrode of the orientated nano fibersization with three-dimensional structure, compare with traditional dull and stereotyped interdigital electrode, the silicon nanofiber of high-specific surface area, can be under the condition that does not reduce interdigital logarithm, increase the surface area of electrode effectively, thereby improve the sensitivity of sensitive electrode effectively, solved the interdigital logarithm of classic flat-plate interdigital electrode and the contradictory relation between the surface area.
In addition, the orientated nano fibers that the present invention produces can also be deep into the inside of sensitive membrane, when improving sensitive electrode sensitivity, has also reduced the resistance of sensitive membrane to a great extent, has reduced to add heat power consumption.
Description of drawings
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1-Fig. 5 is preparation flow figure of the present invention, and wherein, the figure in every picture group (b) is the A-A cut-open view of figure (a).
Fig. 6 (a) is the synoptic diagram of the used interdigital electrode mask plate of photoetching of the present invention, and Fig. 6 (b) is the A-A cut-open view of Fig. 6 (a).
Embodiment
The method for making of this law invention may further comprise the steps:
The first step is organized 1 (a) with reference to figure, (b), adopts whirl coating technology, and coating one layer thickness is the ultraviolet lithography glue of 200nm on monocrystal silicon substrate;
In second step,, (b), press the parameter request of the interdigital electrode of required preparation and make interdigital electrode mask plate, wherein interdigital length 10mm, interdigital width 1mm, interdigital spacing 1mm, 4 pairs of interdigital logarithms with reference to Fig. 6 (a); Serve as that shielding utilizes ultraviolet ray (UV) photoetching with the interdigital electrode mask plate then, obtain as Fig. 2 (a), (b) the photoresist interdigital electrode shown in.
In the 3rd step, the photoresist layer that obtains with previous step is shielding, adopts C
4F
8: 180sccm (milliliter per minute), time: 10s; SF
6: 100sccm (milliliter per minute), the etching parameters of time: 7s, the dry etching monocrystal silicon substrate obtains on monocrystal silicon substrate as Fig. 3 (a), (b) shown in directed nanofiber;
In the 4th step, with reference to Fig. 4 (a), (b), the Ti layer that passes through the first sputter 5-10nm of magnetron sputtering technique thereon is as transition bed again, and the Pt layer of sputter 100nm is as electrode layer again;
The 5th step, utilize the photoresist layer on the organic solvent-acetone removal monocrystal silicon substrate, obtain as Fig. 5 (a), (b) the orientated nano fibers 3 D stereo interdigital electrode of the semiconductor gas sensor shown in.Although below in conjunction with the accompanying drawings embodiment of the present invention are described, invention is not limited to above-mentioned specific embodiments, and above-mentioned specific embodiments only is schematic, guiding, rather than restrictive.Those of ordinary skill in the art under the situation that does not break away from the scope that claim of the present invention protects, can also make a variety of forms under the enlightenment of this instructions, these all belong to the row of the present invention's protection.
Claims (4)
1. the method for making of the orientated nano fibers 3 D stereo interdigital electrode of a semiconductor gas sensor is characterized in that, may further comprise the steps:
1) the coating photoresist forms photoresist layer on monocrystal silicon substrate;
2) make the interdigital electrode mask plate by the parameter request of the interdigital electrode of required preparation, and be shielding with this interdigital electrode mask plate, utilize conventional lithography process, the etching photoresist layer obtains the photoresist interdigital electrode;
3) monocrystal silicon substrate that has the photoresist interdigital electrode is crossed in photoetching and carried out dry etching, on monocrystal silicon substrate, obtain directed nanofiber;
4) utilize magnetron sputtering technique at its surface sputtering one deck Pt metal level, as conductive electrode;
5) adopt the chemical stripping technology to peel off the photoresist layer of monocrystalline silicon surface at last, obtain the orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor.
2. the method for making of the orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor according to claim 1 is characterized in that: the dry etching employing C of described step 3)
4F
8: 180sccm (milliliter per minute), time: 10s; SF
6: 100sccm (milliliter per minute), the etching parameters of time: 7s obtains orientated nano fibers.
3. the method for making of the orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor according to claim 1, it is characterized in that: the magnetron sputtering technique of described step 4), the Ti layer that is first sputter 5-10nm is as transition bed, and the Pt layer of sputter 100nm is as electrode layer again.
4. the method for making of the orientated nano fibers 3 D stereo interdigital electrode of semiconductor gas sensor according to claim 1 is characterized in that: the photoresist layer that described step 5) adopts the chemical stripping technology to remove on the monocrystal silicon substrate adopts the organic solvent-acetone dissolving also to wash photoresist off.
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| CN102768230A (en) * | 2012-08-09 | 2012-11-07 | 电子科技大学 | Vertical flat plate capacitive gas sensor and preparation method thereof |
| CN103407959A (en) * | 2013-09-03 | 2013-11-27 | 中国电子科技集团公司第二十六研究所 | Three-dimensional electrode pattern manufacturing method |
| CN104961094A (en) * | 2015-07-21 | 2015-10-07 | 中国科学院上海微***与信息技术研究所 | Cell microarray structure based on MEMS process and preparation method of cell microarray structure |
| CN107144744A (en) * | 2017-04-25 | 2017-09-08 | 云南大学 | A kind of electrode system for measuring the electron transport performance in nanometer sized materials/structure |
| CN107658141A (en) * | 2017-10-26 | 2018-02-02 | 杨晓艳 | A kind of interdigital electrode and preparation method thereof |
| CN108428737A (en) * | 2016-10-17 | 2018-08-21 | 李湛明 | Semiconductor devices with interdigitated electrodes |
| CN109856198A (en) * | 2019-01-10 | 2019-06-07 | 高炬 | A kind of continuous response hydrogen array gas-sensitive sensor and preparation method thereof |
| US10823692B2 (en) | 2015-10-06 | 2020-11-03 | Carrier Corporation | MEMS die with sensing structures |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102768230A (en) * | 2012-08-09 | 2012-11-07 | 电子科技大学 | Vertical flat plate capacitive gas sensor and preparation method thereof |
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| CN103407959B (en) * | 2013-09-03 | 2016-01-06 | 中国电子科技集团公司第二十六研究所 | Three-diemsnional electrode pattern-producing method |
| CN104961094A (en) * | 2015-07-21 | 2015-10-07 | 中国科学院上海微***与信息技术研究所 | Cell microarray structure based on MEMS process and preparation method of cell microarray structure |
| US10823692B2 (en) | 2015-10-06 | 2020-11-03 | Carrier Corporation | MEMS die with sensing structures |
| CN108428737A (en) * | 2016-10-17 | 2018-08-21 | 李湛明 | Semiconductor devices with interdigitated electrodes |
| CN107144744A (en) * | 2017-04-25 | 2017-09-08 | 云南大学 | A kind of electrode system for measuring the electron transport performance in nanometer sized materials/structure |
| CN107144744B (en) * | 2017-04-25 | 2018-07-20 | 云南大学 | A kind of electrode system measuring the electron transport performance in nanometer sized materials/structure |
| CN107658141A (en) * | 2017-10-26 | 2018-02-02 | 杨晓艳 | A kind of interdigital electrode and preparation method thereof |
| CN109856198A (en) * | 2019-01-10 | 2019-06-07 | 高炬 | A kind of continuous response hydrogen array gas-sensitive sensor and preparation method thereof |
| CN109856198B (en) * | 2019-01-10 | 2021-09-24 | 枣庄学院 | Continuous response hydrogen array gas-sensitive sensor and preparation method thereof |
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