CN107144744B - A kind of electrode system measuring the electron transport performance in nanometer sized materials/structure - Google Patents
A kind of electrode system measuring the electron transport performance in nanometer sized materials/structure Download PDFInfo
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- CN107144744B CN107144744B CN201710273249.3A CN201710273249A CN107144744B CN 107144744 B CN107144744 B CN 107144744B CN 201710273249 A CN201710273249 A CN 201710273249A CN 107144744 B CN107144744 B CN 107144744B
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- electrode
- electron transport
- metal electrode
- square
- transport performance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
Abstract
The present invention relates to the electron transport performance electrode systems in a kind of measurement nanometer sized materials/structure.Include successively from top to bottom：Insulating substrate material SiO2/ Si and in SiO2The interdigital electrode array with fine structure of upper preparation.When scantling is reduced to nanometer scale, huge variation has occurred in electric property, and traditional Ohm's law is no longer applicable in.In order to study the charge movement rule under nanoscale by material in further detail, it would be highly desirable to invent a kind of novel micro-nano electrode system for measuring electron transport performance in nanometer sized materials and structure.The present invention is mainly in the way of compound nesting, controllable triangle metal electrode is accurately prepared in traditional interdigital electrode, the vertical range between horizontal distance regulation and control test eletrode tip by changing triangular-shaped electrodes, measuring distance is set to be accurately controlled in nanoscale, the sample of nanoscale is placed in again between testing electrode, measures its electron transport performance.
Description
Technical field
The invention belongs to field of material technology, further relate to a kind of for measuring in nanometer sized materials/structure
The design and preparation of the electrode system of electron transport performance.
Background technology
In recent years, the development of nanoscale science and technology makes the ability of human knowledge and reforming world have been further upgraded,
Have become one of most important emerging science and technology in the world today, causes the very big concern of scientific circles.With scantling
Be gradually reduced, huge variation has occurred in the performances such as light, heat, electricity, magnetic, unsolved in material science research to overcome
Problem opened up a new way.The development of science and technology promotes the miniaturization trend of electronic device increasingly apparent, and electronic device is got over
Small, heat dissipation is more difficult to, few as possible this requires being used for transmission the carrier number of signal.Carrier number is very little to make noise again
Than reducing, reach physics limit so as to cause traditional microelectronic component.In order to develop more energy efficient, more inexpensive, amount of storage bigger
And the smaller electronic device of volume, the task of top priority are studied when scantling is reduced to nanoscale, electron transport performance
Changing rule.
Under such overall background, the electric property of nanometer sized materials is studied, it is micro- to have become solution electronic device
One of key breakthrough mouth of type.However nano material is since size is small, by electric current it is very faint, cause traditional measurement electric
The electrode of stream is unable to measure or measurement accuracy is not high enough.It would therefore be highly desirable to a kind of material or structure that can measure nanoscale
In electron transport performance electrode system.But the research of current this aspect is still in the starting stage, and there is also prodigious explorations
Space.
The patented technology of PLA University of Science and Technology for National Defense's application " carries the interdigital electrode of nanometer lattice row
And its preparation method and application "（Application number：201310028330.7 application publication number：CN103105423A）In disclose one
Interdigital electrode of the kind with nanometer lattice row, the invention form the orderly polystyrene nanospheres of single layer in glass sheet surface first and cause
Solid matter arranges；Then deposited metal film, the deposition thickness of metal film are less than the 1/2 of nanosphere height, then remove nanometer on it
Ball obtains metal nanodot array；The deposited metal film on metal nanodot array forms what photoresist sketched the contours in metallic film surface
Electrode pattern, then wet etching, until metallic nanodots array exposes again.However, prepared by the interdigital electrode that the invention is related to
Complex process, it is more difficult to realize accurate size Control, also cannot achieve and prepare the different tests for measuring spacing on the same base
Electrode.
Invention content
Goal of the invention：Under the overall background of electronic device micromation, need further to study nanometer sized materials/structure
Electron transport performance.However current research measuring technique cannot be satisfied requirement, therefore our designs invent one kind and can survey
Measure the electrode system of the electron transport performance of nanometer sized materials/structure.
In order to solve the above technical problems, technical solution proposed by the present invention is in a kind of measurement nanometer sized materials/structure
Electron transport performance electrode system, the electrode system include substrate and test electrode two parts, test electrode in pros
Shape SiO2It is prepared in/Si substrates, size of foundation base is 3.5 × 3.5mm2；Electrode is tested to be connected by square-shaped metal electrode D1, metal
Line D2, strip electrode D3, rectangular electrodes D4 and triangle metal electrode D5 compositions；It is uniformly distributed 20 in substrate surrounding
0.5×0.5mm2Square-shaped metal electrode D1, metal electrode D1 thickness is 50nm, between two neighboring square-shaped metal electrode D1
Away from being 100 μm, these square-shaped metal electrode main functions are to be used for connecting test electrode and external equipment；Square-shaped metal electricity
Pole D1 extends a metal contact wires D2, and the other end of metal contact wires D2 is connect with strip electrode D3, strip electricity
It is evenly distributed on a row length and width uniform rectangular electrodes D4, two neighboring strip electrode D3 and is distributed on the D3 of pole
Rectangular electrodes D4 one row interdigital electrodes pair of interlaced composition, totally 10 pairs；It is equally distributed in adjacent pair interdigital electrode
Triangle metal electrode D5 is interlaced；In each interdigital electrode pair, it is evenly distributed on the forward surface of rectangular electrodes D4
15 triangle metal electrode D5, a length of 500nm in bottom edge of triangle metal electrode, a height of 250nm.
Further, above-mentioned square-shaped metal electrode D1, metal contact wires D2, strip electrode D3 and rectangular electrodes D4
It is all made of photoetching technique preparation, triangle metal electrode D5 is prepared using electron beam lithography.
Further, the width of above-mentioned strip electrode D3 is 20m。
Further, the width of above-mentioned rectangular electrodes D4 is 0.5M, thickness 30nm, two neighboring rectangular electrodes
D4 spacing is 100m。
Further, 15 triangle metal electrode D5 are evenly distributed on above-mentioned every rectangular electrodes D4.
Further, the level interval of above-mentioned triangle metal electrode D5 is controllable, to make hanging down for a pair of of test electrode
Straight spacing control is between 35nm to 350nm.
The beneficial effects of the invention are as follows the tests in achievable nanoscale electrodes gap, have good compatibility, high sensitivity, behaviour
The advantages that being simple and convenient to operate, is efficient is, it can be achieved that mass mass produces.
Description of the drawings：
Fig. 1 is the integrally-built schematic diagram of electrode system of the present invention.
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described,
Specific implementation mode
It is a kind of measure nanometer sized materials/structure electron transport performance electrode system, electrode system include substrate and
Electrode two parts are tested, the substrate is square SiO2/ Si substrates, size are 3.5 × 3.5mm2；Substrate upper edge surrounding is used
Photoetching technique prepares the square-shaped metal electrode D1 for having 20 0.5 × 0.5mm2, thickness of electrode 50nm, two neighboring square
Distance between metal electrode D1 is 100M, material are gold.
Mash welder or low temperature can be used for connecting external circuit in square-shaped metal electrode D1 when being attached with external circuit
Conducting resinl can reduce the thickness requirement to square-shaped metal piece in substrate in this way.
Connection with test electrode is connected by preparing a metal with photoetching technique on square-shaped metal electrode D1
It is 20 equally to prepare a width with photoetching technique on line D2, metal contact wires D2The strip electrode D3 of m.
It is 0.5 to prepare width with photoetching technique on strip metal electrode D3The rectangular electrodes D4 of m, adjacent two length
The rectangular electrodes D4 one row interdigital electrodes pair of interlaced composition being distributed on strip shaped electric poles D3, totally 10 pairs.
15 triangle metal electrode D5 are evenly distributed on rectangular electrodes D4, triangle metal electrode D5 is to pass through
What electron beam lithography was prepared in above-mentioned ready-made interdigital electrode, a length of 500nm in bottom edge of triangle metal electrode D5,
A height of 250nm.The level interval of adjacent two triangle metal electrode D5 is adjustable, vertical to change two triangle metal electrode
The distance in direction.It is several to triangle by measuring simultaneously between sample to be tested is placed in triangle metal electrode D5 when work
Electrical signal between metal electrode, then by the amplification analysis etc. of external circuit, the electronics for obtaining nanometer sized materials/structure is defeated
Transport characteristic.
In addition, vertical range between triangle metal electrode of the present invention tests spacing, 35nm to 350nm it
Between can be changed, and the preparation of 10 groups of difference size electrodes can be completed on the same base.The flexibility of this change in size is
Subsequent experimental brings great convenience.The square-shaped metal piece number of the present invention prepared in substrate is variable, by changing
The number for becoming square-shaped metal piece, further changes the logarithm of interdigital electrode in substrate.
Claims (4)
1. a kind of electrode system measuring the electron transport performance in nanometer sized materials/structure, including substrate and test electrode
Two parts, it is characterised in that：Electrode is tested in square SiO2It is prepared in/Si substrates, size of foundation base is 3.5 × 3.5mm2；
Electrode is tested by square-shaped metal electrode D1, metal contact wires D2, strip electrode D3, interdigital electrode D4 and triangle gold
Belong to electrode D5 compositions；
It is uniformly distributed 20 0.5 × 0.5mm in substrate surrounding2Square-shaped metal electrode D1, metal electrode D1 thickness be 50nm,
Two neighboring square-shaped metal electrode D1 spacing is 100 μm, which sets for connecting test electrode with outside
It is standby；
Square-shaped metal electrode D1 extends a metal contact wires D2, the other end and the strip electrode of metal contact wires D2
D3 connections are evenly distributed with the uniform rectangular electrodes D4 of a row length and width, two neighboring strip on strip electrode D3
The rectangular electrodes D4 one row interdigital electrodes pair of interlaced composition being distributed on shape electrode D3, totally 10 pairs；
Equally distributed triangle metal electrode D5 is interlaced in adjacent pair interdigital electrode；
In each pair of interdigital electrode pair, 15 triangle metal electrode D5 are evenly distributed in the opposite sides of rectangular electrodes D4,
The a length of 500nm in bottom edge of triangle metal electrode, a height of 250nm.
2. a kind of electrode system measuring the electron transport performance in nanometer sized materials/structure according to claim 1,
It is characterized in that, square-shaped metal electrode D1, metal contact wires D2, strip electrode D3 and rectangular electrodes D4 are all made of photoetching
Prepared by technology, triangle metal electrode D5 is prepared using electron beam lithography.
3. a kind of electrode system measuring the electron transport performance in nanometer sized materials/structure according to claim 2,
It is characterized in that, the material of square-shaped metal electrode D1 is gold.
4. according to the electrode system of the electron transport performance in a kind of measurement nanometer sized materials/structure described in claim 3
System, which is characterized in that the vertical range between staggered triangles metal electrode D5 is to test the measuring distance of electrode；Pass through change
The horizontal distance of triangle metal electrode D5 can make the control of test spacing between 35nm to 350nm.
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| CN107144744B true CN107144744B (en) | 2018-07-20 |
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| US4441073A (en) * | 1980-12-22 | 1984-04-03 | Electric Power Research Institute, Inc. | Resistivity sensor system for detecting faults in sealed gas-insulated electrical apparatus |
| JPH08262094A (en) * | 1995-03-17 | 1996-10-11 | Toa Denpa Kogyo Kk | Electrode for electric test |
| WO2004002508A1 (en) * | 2002-06-27 | 2004-01-08 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Particles by facile ligand exchange reactions |
| CN102243207A (en) * | 2011-04-19 | 2011-11-16 | 复旦大学 | Electrochemical sensor with nanometer concave-convex structure formed on surface of electrode and preparation method of electrochemical sensor |
| CN102269724A (en) * | 2011-06-23 | 2011-12-07 | 西安交通大学 | Manufacturing method of oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of semiconductor gas-sensitive sensor |
| CN104183574A (en) * | 2013-05-22 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor testing structure and a semiconductor testing method |
| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| CN105651837A (en) * | 2015-12-31 | 2016-06-08 | 中国科学院半导体研究所 | Microelectrode system and preparation method thereof as well as electrochemical sensor |
-
2017
- 2017-04-25 CN CN201710273249.3A patent/CN107144744B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4441073A (en) * | 1980-12-22 | 1984-04-03 | Electric Power Research Institute, Inc. | Resistivity sensor system for detecting faults in sealed gas-insulated electrical apparatus |
| JPH08262094A (en) * | 1995-03-17 | 1996-10-11 | Toa Denpa Kogyo Kk | Electrode for electric test |
| WO2004002508A1 (en) * | 2002-06-27 | 2004-01-08 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon | Particles by facile ligand exchange reactions |
| CN102243207A (en) * | 2011-04-19 | 2011-11-16 | 复旦大学 | Electrochemical sensor with nanometer concave-convex structure formed on surface of electrode and preparation method of electrochemical sensor |
| CN102269724A (en) * | 2011-06-23 | 2011-12-07 | 西安交通大学 | Manufacturing method of oriented nano-fiberized three-dimensional stereoscopic interdigital electrode of semiconductor gas-sensitive sensor |
| CN104183574A (en) * | 2013-05-22 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor testing structure and a semiconductor testing method |
| CN104752532A (en) * | 2015-01-17 | 2015-07-01 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
| CN105651837A (en) * | 2015-12-31 | 2016-06-08 | 中国科学院半导体研究所 | Microelectrode system and preparation method thereof as well as electrochemical sensor |
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