CN102264944A - Cvd装置 - Google Patents
Cvd装置 Download PDFInfo
- Publication number
- CN102264944A CN102264944A CN2010800037896A CN201080003789A CN102264944A CN 102264944 A CN102264944 A CN 102264944A CN 2010800037896 A CN2010800037896 A CN 2010800037896A CN 201080003789 A CN201080003789 A CN 201080003789A CN 102264944 A CN102264944 A CN 102264944A
- Authority
- CN
- China
- Prior art keywords
- carbonaceous substrate
- overlay film
- cvd device
- pedestal
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 88
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 230000008676 import Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000000873 masking effect Effects 0.000 abstract 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 53
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 6
- 208000037656 Respiratory Sounds Diseases 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本发明提供一种能够在不导致生产成本的高昂、装置的大型化的情况下飞跃性地提高基座的品质和生产性的CVD装置。在该CVD装置中,在碳质基材(10)的一部分形成有凹状的掩模部(10a),在将掩模夹具(7)嵌入该掩模部(10a)的状态下向内部导入气体,由此在除了由掩模夹具(7)覆盖的部位以外的碳质基材(10)的表面形成SiC覆膜,所述CVD装置的特征在于,通过将所述掩模夹具(7)固定于覆膜形成用夹具(2),从而由覆膜形成用夹具(2)支承所述碳质基材(10),并且,所述碳质基材(10)的主面相对于铅垂轴(9)的角度为2°。
Description
技术领域
本发明涉及在碳质基材的整面形成SiC覆膜的CVD装置。
背景技术
例如,在半导体外延生长中使用的基座(suscepter)等由在碳质基材的表面形成有SiC被覆层的材质构成。SiC覆膜向碳质基材表面的形成通常通过使碳化氢那样的含有碳源的卤化有机硅化合物在还原性气流中发生热分解反应而在碳质基材的表面直接蒸镀SiC的CVD法(化学性气相析出法)来进行,但形成的SiC覆膜需要作为没有针孔的极致密且均质的层而被覆在碳质基材的整面。
因此,例如在配置有掩模部的基座中,如图10所示,通过掩模部件61支承碳质基材60,并同时将碳质基材以横置(放倒状态)进行SiC覆膜的形成。但是,在该方法中,具有以下所示的问题。
即,若将碳质基材60以横置进行覆膜形成,则在碳质基材60的锪孔面60a中,在存在灰尘或剥离片等微粒的状态下形成SiC覆膜。当使用成为该状态的基座来进行SiC覆膜的形成时,微粒产生影响而使收纳在锪孔内的晶片在锪孔面内运动,从而与锪孔部的侧面接触,其结果是,在晶片上产生缺口或裂纹,最坏的情况下,产生晶片从锪孔内飞出这样的不良情况。另外,也有因膜厚不均匀而产生颜色不均的问题。
考虑上述情况而提出有如下方案,即,通过将碳质基材悬架于具有比碳质基材的贯通孔的直径小的截面积的旋转支承杆,而使碳质基材的支承接点连续移动(参照下述专利文献1)。根据该提案,能够解决上述课题。然而,在上述专利文献1所示的提案中,仅适用于具有孔的基座,而且额外需要用于使旋转支承杆工作的驱动机构等,从而产生CVD装置的生产成本高昂或导致CVD装置大型化这些新的课题。
因此,如图11所示,提出有基座独立式的CVD装置。具体而言,在该CVD装置中,在前端锥状的支承台50的刀口支承部50a载置安装有掩模部件55的碳质基材51,并利用销52支承碳质基材51的两面。若形成为这种结构,则也能够适用于没有孔的基座,而且,不需要用于使旋转支承杆工作的驱动机构等,因此能够防止CVD装置的生产成本高昂或CVD装置的大型化。
【现有技术文献】
【专利文献】
【专利文献1】日本特开昭63-134663号公报
然而,在上述的现有结构中,由于是仅利用销52来支承碳质基材51的两面的结构,因此碳质基材51有时会旋转而偏向倾斜方向,甚至倾倒。当碳质基材51如后者那样倾倒时,若仅一个碳质基材51倾倒的话,问题还不那么大,但有时由于一个碳质基材51的倾倒,导致与其相邻的碳质基材51也会倾倒。其结果是,存在多个碳质基材51倾倒而无法形成所希望的SiC覆膜这一课题。另外,由于掩模部件55仅嵌入碳质基材51的凹部,因此在施加有外力的情况下还存在落下的问题。并且,由于支点轨迹形成在基座的外周部,因此也存在在基座的外周部产生裂纹这样的问题。
此外,在CVD装置中,虽然是使支承台50旋转并同时在碳质基材51上形成SiC覆膜的结构,但在CVD装置的内部,在中央部和周边部因距原料气体供给部的距离不同而反应的原料气体的流量、流速不同。因此,当像以往的CVD装置那样将碳质基材51排列成一直线状时,存在因碳质基材51的配置位置的不同而覆膜厚度不同,锪孔面或锪孔的翘曲量极大的课题。
发明内容
因此,本发明的目的在于提供一种不会导致生产成本高昂或装置的大型化、能够飞跃性地提高基座的品质和生产性的CVD装置。
为了完成上述目的,本发明提供一种CVD装置,在板状的碳质基材的一部分形成有凹状的掩模部,在将掩模夹具嵌入该掩模部的状态下向内部导入气体,由此在除了由掩模夹具覆盖的部位以外的碳质基材的表面上形成SiC覆膜,所述CVD装置的特征在于,通过将所述掩模夹具固定于覆膜形成用夹具,从而由覆膜形成用夹具支承所述碳质基材,并且使所述碳质基材的主面相对于铅垂轴的向上角度大于0°且小于90°。
若如上述结构那样,碳质基材的主面的相对于铅垂轴的向上角度大于0°,则在支承碳质基材的水平面方向上的面积增加,因此即使在施加少许外力的情况下,也能维持掩模夹具嵌入到碳质基材的掩模部的状态,能够抑制在SiC覆膜形成中碳质基材落下的情况。并且,也能够防止一个碳质基材的落下引起的相邻碳质基材的倾倒。另一方面,由于碳质基材的主面相对于铅垂轴的向上角度小于90°,因此能够抑制在锪孔内积存微粒的情况。因此,在使用基座使半导体外延生长时,能够抑制在晶片上产生缺口或裂纹、或者晶片从锪孔飞出的情况。
另外,由于不是通过碳质基材的外周支承碳质基材的结构,因此不会在基座的外周部形成支点轨迹,其结果是能够防止在基座的外周部产生裂纹的情况。
另外,由于被掩模夹具覆盖的掩模部不形成SiC覆膜,而除了掩模部以外的碳质基材的表面成为完全露出的状态,因此在除了掩模部以外的碳质基材的表面均匀地涂覆有SiC覆膜。因此,能够抑制产生颜色不均的情况。
此外,由于碳质基材被以纵置的状态支承,因此能够通过碳质基材的自重来抑制基座产生翘曲的情况。并且,由于掩模部和碳质基材被牢固地固定,因此在碳质基材与夹具之间难以产生空间或偏离,基座难以脱落。
由于以上情况,在通过本发明的CVD装置制作的基座中,翘曲量少,能够抑制裂纹或颜色不均的产生率而将外观良好地保持,因此能够提高基座的品质。
并且,由于不需要另外设置旋转支承天平等驱动机构等,因此能够防止引起CVD装置的生产成本的高昂或CVD装置的大型化。
优选所述碳质基材相对于所述铅垂轴的角度为1.5°以上且2.5°以下。
若为这样的结构,则进一步发挥能够抑制在SiC覆膜形成中碳质基材落下的效果和能够抑制在锪孔内积存微粒的效果。
优选在所述碳质基材与掩模夹具之间配置有热膨胀片。
若为这样的结构,则碳质基材与掩模夹具的嵌合更加牢固,因此能够进一步抑制碳质基材从掩模夹具落下的情况,并且,由于抑制在碳质基材与掩模夹具之间产生空间,因此能够抑制在掩模部内侵入覆膜形成用的气体的情况,并且,能够阻止因热膨胀片比SiC覆膜强度小而引起的在覆膜形成结束后将掩模夹具从基座取下时,SiC覆膜从基座剥落的情况。
当使用多个覆膜形成用夹具在碳质基材的表面形成SiC覆膜时,优选各碳质基材配置成距装置的中心等距离。
在CVD装置的内部,虽然中央部和周边部距原料气体供给部的距离不同,但若各碳质基材配置成距装置的中心等距离,则能够消除碳质基材的配置位置引起的距原料气体供给部的距离的差异,从在任一基座中都能够降低其翘曲量。
发明效果
根据本发明,具有能够在不导致生产成本的高昂、装置的大型化的情况下飞跃性地提高基座的品质和生产性这样的优良效果。
附图说明
图1是表示本发明的CVD装置的内部结构的立体图。
图2是表示本发明的CVD装置的内部结构的俯视图。
图3是在覆膜形成用夹具上安装了碳质基材时的侧视图。
图4是图3的主要部分放大分解图。
图5是向覆膜形成用夹具安装碳质基材时的说明图,其图(a)是表示准备了覆膜形成用夹具、掩模夹具、碳质基材的状态的立体图,其图(b)是表示在碳质基材的掩模部(凹部)嵌合了掩模夹具的主体部的状态的立体图,其图(c)是表示在MOCVD用螺钉的螺纹孔螺合了掩模夹具的螺钉部的状态的立体图。
图6是表示CVD装置的变形例的侧视图。
图7是表示CVD装置的另一变形例的侧视图。
图8是表示CVD装置的再一变形例的侧视图。
图9是使用基座而使半导体外延生长的情况的图,其图(a)是在锪孔内部没有微粒的情况的说明图,其图(b)是在锪孔内部存在微粒的情况的说明图。
图10是表示以往的CVD装置的内部结构的立体图。
图11是表示以往的CVD装置的内部结构的立体图。
具体实施方式
如图1及图2所示,本发明的CVD装置具有在SiC覆膜的形成时旋转的圆板状的旋转台1,在该旋转台1的外周附近设置有多个覆膜形成用夹具2。优选上述覆膜形成用夹具2配置成距装置的中心(旋转台1的中心1a)等距离。原因在于,虽然中央部和周边部距原料气体供给部的距离不同,但若将覆膜形成用夹具2配置成距装置的中心等距离,则安装在覆膜形成用夹具2上的各碳质基材10也被配置成距装置的中心等距离。因此,由碳质基材10的配置位置引起的距原料气体供给部的距离的差异被消除,从而在任一基座中都能够降低其翘曲量。需要说明的是,图1中的10d为锪孔,形成有该锪孔10d的面为上述碳质基材10的主面。
如图3及图4所示,上述覆膜形成用夹具2具备台座3、支承棒4、MOCVD用机壳5以及MOCVD用螺钉6,在上述台座3的一方端部附近固定有上述支承棒4。在该支承棒4的另一端固定有MOCVD用机壳5,在该MOCVD用机壳5上以相对于水平轴8向上倾斜θ(在本方式中为2°)的方式固定有MOCVD用螺钉6。在该MOCVD用螺钉6的内周形成的螺纹孔6a中螺合掩模夹具7的螺钉部7a,在该螺钉部7a固定板状的主体部7b。主体部7b以该主体部7b的抵接面7c与掩模部(凹部)10a的底面10b相接的方式嵌合于碳质基材10的掩模部(凹部)10a,由此,阻止掩模部10a中的覆膜形成。另外,在如图3那样配置有碳质基材10的状态下,若重心靠近覆膜形成用夹具2的大致中心,则在覆膜形成时等能够阻止覆膜形成用夹具2倾倒的情况。
需要说明的是,上述主体部7b相对于上述螺钉部7a垂直。因此,安装在主体部7b上的圆盘状的碳质基材10的上述主面相对于铅垂轴9倾斜θ(本方式中为2°)。如此,通过以碳质基材10的上述主面稍朝向上方的方式将碳质基材10安装于掩模夹具7,能够抑制碳质基材10落下,并同时能够抑制以在碳质基材10的锪孔10d中存在灰尘或剥离片等微粒的状态形成SiC覆膜的情况。
接着,基于图5(a)~(c),说明碳质基材5的配置方法。
首先,如其图(a)所示,在准备了覆膜形成用夹具2、掩模夹具7、和碳质基材10后,如其图(b)所示,在碳质基材10的掩模部(凹部)10a嵌合掩模夹具7的主体部7b。之后,如其图(c)所示,在MOCVD用螺钉6的螺纹孔6a中螺合掩模夹具7的螺钉部7a后,将多个覆膜形成用夹具2配置到旋转台1的外周附近,由此结束覆膜形成准备。
(其它的事项)
(1)在上述方式中,以相对于水平轴8向上方倾斜θ的方式固定MOCVD用螺钉6(即,将碳质基材10的倾斜固定),但不限定为这样的结构,也可以如图6所示,形成MOCVD用螺钉6相对于MOCVD用机壳5能够向A方向、B方向转动的结构。若为这样的结构,则能够根据覆膜形成条件等改变碳质基材10的倾斜。
(2)如上述方式所示,通过不使MOCVD用螺钉6倾斜,而是如图7所示那样使掩模夹具7的抵接面7c相对于铅垂轴9倾斜角度θ,也能发挥与上述同样的作用效果。
(3)如图8所示,也可以为在碳质基材10的内周面10c与掩模夹具7的外周面7d之间配置热膨胀片12的结构。另外,也可以预先卷绕在掩模夹具7的外周部7d。若为这样的结构,则掩模夹具7的主体部7b与碳质基材10的掩模部(凹部)10a的嵌合更加牢固,因此能够进一步抑制碳质基材10从掩模夹具7落下的情况,并能够抑制在主体部7b与掩模部(凹部)10a之间产生空间的情况,从而能够抑制覆膜形成用的气体侵入掩模部(凹部)10a内的情况,并且,能够阻止因热膨胀片12比SiC覆膜强度小而引起的在覆膜形成结束后将掩模夹具7从基座取下时,SiC覆膜从基座剥落的情况。
实施例
以下,基于实施例,具体地说明本发明,但CVD装置不被下述实施例的内容限制。
〔实施例1〕
使用以用于实施上述发明的方式所示的CVD装置来制作基座。
以下,将这样制作的基座称为本发明基座A1。
〔实施例2~7〕
除了使用基座主面相对于铅垂轴9的向上角度θ分别为1.0°、1.5°、2.5°、3.0°、4.0°及5.0°的CVD装置以外,与上述实施例1同样地制作基座。
以下,将这样制作的基座分别称为本发明基座A2~A7。
〔比较例1、2〕
除了使用基座主面相对于铅垂轴9的向上角度(以下,存在称为倾斜角度的情况)θ分别为0°及90°的CVD装置以外,与上述实施例1同样地制作基座。
以下,将这样制作的基座分别称为比较基座Z1、Z2。
〔实验1〕
对上述本发明基座A1~A7及比较基座Z1、Z2制作时的碳质基材的脱落比例和微粒堆积区域进行了研究,在表1中示出其结果。需要说明的是,实验条件(覆膜形成条件)如下所示。
·实验条件
装置内的压力:0.1~760Torr
炉内的温度:1150~1500℃
导入气体:CH3SiCl3(甲基三氯硅烷)和作为载气的氢气
SiC覆膜的膜厚:40~60μm
【表1】
由表1清楚所示,对于碳质基材的脱落来说,在倾斜角度θ为2.0°以上的本发明基座A1、A4~A7及比较基座Z2中,完全未观察到碳质基材的脱落,与此相对,观察到在倾斜角度θ为1.5°的本发明基座A3中,脱落14%,在倾斜角度θ为1.0°的本发明基座A3中,脱落65%,并且在倾斜角度θ为0°的比较基座Z1中,脱落92%。
而对于基座的微粒堆积来说,在倾斜角度θ为2.0°以下的本发明基座A1~A3及比较基座Z1中,基本观察不到微粒堆积。与此相对,在倾斜角度θ为2.5°的本发明基座A4中,在锪孔边缘下侧1/4区域观察到约50μm以下的微粒,在倾斜角度θ为3.0°的本发明基座A5中,在锪孔边缘下侧1/3区域观察到约50μm以下的微粒,并且在倾斜角度θ为4.0°的本发明基座A6中,在锪孔边缘下侧的约1/2区域观察到约50μm以下的微粒。并且,在倾斜角度θ为5.0°的本发明基座A7中,在锪孔边缘下侧1/2以上的区域确认有约50μm以下的微粒,且在锪孔面内也确认有微粒,进而,在倾斜角度θ为90°的比较基座Z2中,在锪孔面内确认有大量的约50μm以下的微粒。
若考虑以上的情况,则倾斜角度θ需要为0°<θ<90°,尤其优选限制在1.0°≤θ≤4.0°(其中更优选1.5°≤θ≤2.5°)。
需要说明的是,当在锪孔面内存在微粒时,会有在晶片上产生缺口或裂纹等问题,基于图9(a)、(b)对其原因进行说明。如图9(b)所示,若在锪孔面10e内存在微粒15,则在载置晶片14时,出现晶片14从锪孔面10e抬起的部位。在该情况下,由于以高速旋转进行晶片14的处理,因此若晶片14从锪孔面10e抬起,则晶片14在锪孔10d内运动而与锪孔侧面10f接触,在晶片14上产生缺口或裂纹,最坏的情况下,产生晶片14从锪孔10d飞出这样的不良情况。与此相对,如图9(a)所示,若在锪孔面10e内不存在微粒15,则能够抑制上述不良情况的发生。
工业实用性
本发明的CVD装置能够用于半导体外延生长用基座的制造等。
符号说明:
1:旋转台
2:覆膜形成用夹具
6:MOCVD用螺钉
7:掩模夹具
7b:主体部
8:水平轴
9:铅垂轴
10:碳质基材
10a:掩模部
Claims (4)
1.一种CVD装置,在板状的碳质基材的一部分形成有凹状的掩模部,在将掩模夹具嵌入该掩模部的状态下向内部导入气体,由此在除了由掩模夹具覆盖的部位以外的碳质基材的表面上形成SiC覆膜,所述CVD装置的特征在于,
通过将所述掩模夹具固定于覆膜形成用夹具,从而由覆膜形成用夹具支承所述碳质基材,并且使所述碳质基材的主面相对于铅垂轴的向上角度大于0°且小于90°。
2.根据权利要求1所述的CVD装置,其中,
所述碳质基材的主面相对于所述铅垂轴的向上角度为1.5°以上且2.5°以下。
3.根据权利要求1或2所述的CVD装置,其中,
在所述碳质基材与掩模夹具之间配置有热膨胀片。
4.根据权利要求1~3中任一项所述的CVD装置,其中,
当使用多个覆膜形成用夹具在碳质基材的表面形成SiC覆膜时,各碳质基材配置成距装置的中心等距离。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-028065 | 2009-02-10 | ||
JP2009028065A JP5394092B2 (ja) | 2009-02-10 | 2009-02-10 | Cvd装置 |
PCT/JP2010/051201 WO2010092878A1 (ja) | 2009-02-10 | 2010-01-29 | Cvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102264944A true CN102264944A (zh) | 2011-11-30 |
CN102264944B CN102264944B (zh) | 2013-06-26 |
Family
ID=42561722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010800037896A Active CN102264944B (zh) | 2009-02-10 | 2010-01-29 | Cvd装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110308459A1 (zh) |
EP (1) | EP2397575B1 (zh) |
JP (1) | JP5394092B2 (zh) |
KR (1) | KR20110113612A (zh) |
CN (1) | CN102264944B (zh) |
WO (1) | WO2010092878A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107385418A (zh) * | 2017-07-24 | 2017-11-24 | 江苏实为半导体科技有限公司 | 一种可在衬底上全覆盖沉积的cvd设备 |
TWI709528B (zh) * | 2018-06-27 | 2020-11-11 | 日商亞都麻布股份有限公司 | SiC構件 |
KR102478833B1 (ko) * | 2021-09-29 | 2022-12-16 | 에스케이씨솔믹스 주식회사 | 서셉터 샤프트 가공 지그 |
CN115522183A (zh) * | 2021-06-24 | 2022-12-27 | 阔斯泰公司 | 基座及其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2767612A4 (en) * | 2011-10-14 | 2015-03-25 | Toyo Tanso Co | CHEMICAL VAPOR DEPOSITION DEVICE (CVD), METHOD FOR MANUFACTURING SUSCEPTOR IN WHICH CVD DEVICE USED AND SUSCEPTOR |
KR101473161B1 (ko) * | 2012-10-31 | 2014-12-16 | 송민우 | 패턴코드 인식용 멀티미디어 재생장치 및 그 구동방법 |
KR101416583B1 (ko) * | 2013-04-26 | 2014-07-09 | 주식회사 케이엔제이 | 물질전달 지배 반응에 의한 서셉터 제조방법과 장치 및 그에 의해 제조된 서셉터 |
KR101423464B1 (ko) | 2014-03-10 | 2014-07-28 | 주식회사 케이엔제이 | 물질전달 지배 반응에 의한 서셉터 제조장치 |
KR101671671B1 (ko) * | 2016-05-25 | 2016-11-01 | 주식회사 티씨케이 | 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품 |
JP7279465B2 (ja) * | 2019-03-28 | 2023-05-23 | 住友金属鉱山株式会社 | 支持基板、支持基板の保持方法、及び、成膜方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3645230A (en) * | 1970-03-05 | 1972-02-29 | Hugle Ind Inc | Chemical deposition apparatus |
JPH0639358B2 (ja) * | 1984-11-27 | 1994-05-25 | ソニー株式会社 | 有機金属気相成長装置 |
US4969416A (en) * | 1986-07-03 | 1990-11-13 | Emcore, Inc. | Gas treatment apparatus and method |
JPS63134663A (ja) | 1986-11-25 | 1988-06-07 | Tokai Carbon Co Ltd | カ−ボン基材面への被膜形成方法 |
US5763020A (en) * | 1994-10-17 | 1998-06-09 | United Microelectronics Corporation | Process for evenly depositing ions using a tilting and rotating platform |
JPH09219378A (ja) * | 1996-02-13 | 1997-08-19 | Sony Corp | 半導体製造装置 |
JP2002249376A (ja) * | 2000-12-18 | 2002-09-06 | Toyo Tanso Kk | 低窒素濃度炭素系材料及びその製造方法 |
JP2003110012A (ja) * | 2001-09-28 | 2003-04-11 | Nissin Electric Co Ltd | 基板保持方法およびその装置 |
JP2006089819A (ja) * | 2004-09-27 | 2006-04-06 | Toshiba Ceramics Co Ltd | Cvdコーティング方法およびcvdコーティング装置 |
FR2882064B1 (fr) * | 2005-02-17 | 2007-05-11 | Snecma Propulsion Solide Sa | Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats |
JP4835826B2 (ja) * | 2005-04-25 | 2011-12-14 | 株式会社昭和真空 | 液晶配向膜用真空蒸着装置およびその成膜方法 |
US20070169703A1 (en) * | 2006-01-23 | 2007-07-26 | Brent Elliot | Advanced ceramic heater for substrate processing |
KR100790729B1 (ko) * | 2006-12-11 | 2008-01-02 | 삼성전기주식회사 | 화학 기상 증착 장치 |
JP4880624B2 (ja) * | 2008-01-28 | 2012-02-22 | 東洋炭素株式会社 | 気相成長用サセプター及びその製造方法 |
JP2010095745A (ja) * | 2008-10-15 | 2010-04-30 | Sumitomo Electric Ind Ltd | 成膜方法及び成膜装置 |
-
2009
- 2009-02-10 JP JP2009028065A patent/JP5394092B2/ja active Active
-
2010
- 2010-01-29 KR KR1020117016060A patent/KR20110113612A/ko not_active Application Discontinuation
- 2010-01-29 CN CN2010800037896A patent/CN102264944B/zh active Active
- 2010-01-29 WO PCT/JP2010/051201 patent/WO2010092878A1/ja active Application Filing
- 2010-01-29 EP EP10741157.1A patent/EP2397575B1/en not_active Not-in-force
- 2010-01-29 US US13/148,852 patent/US20110308459A1/en not_active Abandoned
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107385418A (zh) * | 2017-07-24 | 2017-11-24 | 江苏实为半导体科技有限公司 | 一种可在衬底上全覆盖沉积的cvd设备 |
TWI709528B (zh) * | 2018-06-27 | 2020-11-11 | 日商亞都麻布股份有限公司 | SiC構件 |
US11597655B2 (en) | 2018-06-27 | 2023-03-07 | Admap Inc. | SiC member |
CN115522183A (zh) * | 2021-06-24 | 2022-12-27 | 阔斯泰公司 | 基座及其制造方法 |
KR102478833B1 (ko) * | 2021-09-29 | 2022-12-16 | 에스케이씨솔믹스 주식회사 | 서셉터 샤프트 가공 지그 |
Also Published As
Publication number | Publication date |
---|---|
EP2397575A4 (en) | 2013-10-16 |
WO2010092878A1 (ja) | 2010-08-19 |
JP5394092B2 (ja) | 2014-01-22 |
CN102264944B (zh) | 2013-06-26 |
EP2397575A1 (en) | 2011-12-21 |
US20110308459A1 (en) | 2011-12-22 |
JP2010185091A (ja) | 2010-08-26 |
EP2397575B1 (en) | 2015-03-25 |
KR20110113612A (ko) | 2011-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102264944B (zh) | Cvd装置 | |
TWI649781B (zh) | 用於化學氣相沈積之自定中心晶圓載具系統 | |
JP5926730B2 (ja) | 改良されたウェハキャリア | |
JP5560355B2 (ja) | 一様でない熱抵抗を有するウエハキャリア | |
KR100778218B1 (ko) | 기상 성장 장치와 기상 성장 방법 | |
US9637822B2 (en) | Multi-rotation epitaxial growth apparatus and reactors incorporating same | |
TW201145446A (en) | Wafer carrier with sloped edge | |
TWI692052B (zh) | 基板處理裝置及基板處理方法 | |
WO2009084154A1 (ja) | エピタキシャル成長用サセプタ | |
CN102272352B (zh) | Cvd装置 | |
CN102347258A (zh) | 一种用于半导体外延***的基座 | |
JP5161748B2 (ja) | 気相成長用サセプタ及び気相成長装置並びにエピタキシャルウェーハの製造方法 | |
CN102644106B (zh) | 一种单片炉外延层厚度均匀性生长的控制方法 | |
JP2013004956A (ja) | 薄膜形成のための回転システム及びその方法 | |
WO2018207942A1 (ja) | サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板 | |
JP2011077476A (ja) | エピタキシャル成長用サセプタ | |
CN103717784A (zh) | Cvd装置、使用了该cvd装置的基座的制造方法、及基座 | |
CN213538160U (zh) | 在晶圆的正面上沉积外延层的装置 | |
CN113279055B (zh) | 一种外延基座 | |
JP2017054920A (ja) | ウェハホルダおよび半導体製造装置 | |
WO2016209647A1 (en) | Self-centering wafer carrier system for chemical vapor deposition | |
JP2022121078A (ja) | サセプタ、成膜装置および基板成膜方法 | |
TWM630893U (zh) | 用於磊晶沉積之基板反應器及用於化學氣相沉積反應器之基板載體 | |
JP2003297754A (ja) | シリコンエピタキシャルウェーハの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |