CN102260855A - Semiconductor processing apparatus with anti-etching layer and manufacturing method thereof - Google Patents
Semiconductor processing apparatus with anti-etching layer and manufacturing method thereof Download PDFInfo
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- CN102260855A CN102260855A CN2011102101465A CN201110210146A CN102260855A CN 102260855 A CN102260855 A CN 102260855A CN 2011102101465 A CN2011102101465 A CN 2011102101465A CN 201110210146 A CN201110210146 A CN 201110210146A CN 102260855 A CN102260855 A CN 102260855A
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Abstract
The embodiment of the invention provides a semiconductor processing apparatus with an anti-etching layer and a manufacturing method thereof. The semiconductor processing apparatus comprises a treatment cavity, which is used for processing a substrate disposed inside the treatment cavity by adding a source gas and is also used for accommodating plasma. A plurality of processing parts is disposed inside the treatment cavity. The semiconductor processing apparatus also comprises an anti-etching layer, which covers on the surface of the treatment cavity and/or the processing parts exposed to plasma and is used for resisting the etching of plasma and protecting the treatment cavity and/or the processing parts. According to the invention, as the anti-etching layer is utilized to protect the treatment cavity and the processing parts, plasma is prevented from damaging the treatment cavity and the processing parts, and the service life of the treatment cavity and the processing parts is increased.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly etch-resistant layer, semiconductor processing device and preparation method thereof.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapour deposition (Metal-organic Chemical Vapor Deposition).MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).It with hydride of the organic compound of III family, II family element and V, VI family element etc. as the crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is to carry out in cold wall quartz (stainless steel) reaction chamber of normal pressure or low pressure (10-100Torr), and adopts H
2As carrier gas (Carrier Gas), underlayer temperature is 500-1200 ℃, heats graphite base (substrate base is above graphite base), H with radio-frequency induction
2Fluid supply bubbling mode by Controllable Temperature is carried metallorganics to the vitellarium.
Specifically please in conjunction with existing MOCVD internal structure synoptic diagram shown in Figure 1.Has heating graphite base 20 in the treatment chamber 40, place some pending substrates 30 on the described heating graphite base 20, spray header (shower head, SH) 10 is staggered relatively with described heating graphite base 20 and pending substrate 30, the material of described spray header 10 is materials such as stainless steel, have a plurality of holes in the described spray header 10, this spray header 10 is sprayed on pending substrate 30 tops by described cavity with gaseous substance, chemical reaction takes place above described pending substrate 30, the reactive material that forms is deposited on the described pending substrate 30, forms epitaxial film.
In being the U.S. Patent application of US20050136188, application number can find more information about existing MOCVD equipment.
Find in practice, in the technological process of MOCVD equipment, owing between the accumulation of source material, the source material reasons such as reactive material accumulation that chemical reaction generates taking place, cause the interior processing element of MOCVD apparatus cavity inside and MOCVD equipment by above-mentioned source material or reactive material contamination, prior art adopts the in-situ chemical cleaning method regularly the treatment chamber of MOCVD equipment to be cleaned.Wherein said in-situ chemical cleaning method is for forming the plasma body that contains acid ion or alkali ion in the treatment chamber of MOCVD equipment, utilize described plasma body that the surface of the treatment chamber of MOCVD equipment and the processing element that may be polluted is cleaned, react by described plasma body and source material or reactive material described source material or reactive material are removed.
Find in practice, the plasma body that uses in the above-mentioned in-situ chemical cleaning method is when removing described source material or reactive material, the inside of meeting damage MOCVD apparatus cavity and processing element are exposed to the surface under the plasma body, thereby can reduce the work-ing life of MOCVD apparatus cavity and processing element, increase user's use cost.
Summary of the invention
The problem that the present invention solves has provided a kind of etch-resistant layer, semiconductor processing device and preparation method thereof, form etch-resistant layer on the surface of the reaction chamber of MOCVD equipment and the surface that processing element is exposed to plasma body, eliminate or reduce the influence of the reaction chamber and the plasma damage that processing element is subjected to of existing MOCVD equipment, improve the work-ing life of MOCVD apparatus cavity and processing element, thereby reduce user's use cost.
For addressing the above problem, the embodiment of the invention provides a kind of semiconductor processing device, comprise treatment chamber, described treatment chamber is used to feed source gas, the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, has a plurality of processing element in the described treatment chamber, also comprises:
Etch-resistant layer is covered in the surface that is exposed to plasma body of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body, and the material of described etch-resistant layer is a ceramic material.
Alternatively, described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RhO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
Alternatively, the material of described treatment chamber and/or described processing element is identical or inequality with the material of described etch-resistant layer.
Alternatively, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
A kind of making method of semiconductor processing device comprises:
Treatment chamber or processing element are provided, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element;
The surface that is exposed to plasma body in described treatment chamber and/or described processing element forms etch-resistant layer; described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element, and the material of described etch-resistant layer is a ceramic material.
Alternatively, described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
Alternatively, the material of described treatment chamber and/or described processing element is identical or inequality with the material of described etch-resistant layer.
Alternatively, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
Alternatively, the making method of described etch-resistant layer is plasma spraying technology, chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, physical gas-phase deposition, chemical sol gel process, wet chemical coating process or combination wherein.
Correspondingly, the present invention also provides a kind of etch-resistant layer, is used to resist plasma etching, and the material of described etch-resistant layer is a ceramic material, and described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
Alternatively, described etch-resistant layer making method is plasma spraying technology, chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, physical gas-phase deposition, chemical sol gel process, wet chemical coating process or combination wherein.
Compared with prior art, the embodiment of the invention has the following advantages:
The embodiment of the invention forms etch-resistant layer in the treatment chamber of semiconductor processing device and/or the surface that is exposed to plasma body of processing element, thereby when carrying out the in-situ chemical cleaning, this etch-resistant layer can be resisted the etching of plasma body, and can protect treatment chamber and/or processing element, reduce the surface damage of plasma body to described treatment chamber and/or processing element, improve the work-ing life of described treatment chamber and/or processing element, reduce user's use cost;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, thereby described treatment chamber and/or described processing element can be resisted the etching of plasma body better;
Further; material in the material of treatment chamber described in the optional embodiment of the present invention and/or described processing element and described etch-resistant layer also can be inequality; thereby after described etch-resistant layer is used for some time; can utilize cmp; clean; the method of etching or machinery is removed etch-resistant layer; again form new etch-resistant layer on the surface of described treatment chamber and/or described processing element then; to protect treatment chamber and/or processing element better; prolong the work-ing life of described treatment chamber and/or processing element, thereby further reduce user's use cost.
Description of drawings
Fig. 1 is the structural representation of existing MOCVD equipment;
Fig. 2 is the making method schematic flow sheet of semiconductor processing device of the present invention;
Fig. 3 is the showerhead configuration synoptic diagram of etch rate that is used to test etch-resistant layer of one embodiment of the invention.
Embodiment
For utilizing plasma to carry out the equipment of art breading, for example plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment (MOCVD equipment utilization plasma body carries out In-Situ Cleaning to treatment chamber and processing element), its treatment chamber and processing element are subjected to the problem of the damage of plasma body easily, the embodiment of the invention proposes a kind of semiconductor processing device, comprising:
Comprise treatment chamber, described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, has a plurality of processing element in the described treatment chamber, also comprises:
Etch-resistant layer is covered in the surface that is exposed to plasma body of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body.Semiconductor processing device of the present invention is to produce any semiconductor processing device that plasma body and this plasma body may produce plasma damage to the processing element in treatment chamber and/or the treatment chamber in the treatment chamber, for example, described semiconductor processing device can be plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment etc.Described treatment chamber is generally vacuum chamber, can feed source gas in the described treatment chamber as reactant gases, and can produce plasma body.Described processing element is meant all building blocks that are positioned at treatment chamber inside, spray header (showerhead for example, SH), warm table (heater) etc., the surface that is exposed to part in the plasma environment and described treatment chamber in the described processing element is subjected to the damage of plasma body easily.
As an embodiment, described semiconductor processing device is a MOCVD equipment, because long-time (6～9 hours) technology that the depositing operation of MOCVD equipment normally carries out under high temperature (500～1200 degrees centigrade) environment is therefore, higher to the specification of quality of its treatment chamber and processing element.When utilizing plasma body that treatment chamber and/or processing element are cleaned, if damage treatment chamber and/or processing element, the yield of easier reduction product and may cause the fault (can influence the MOCVD usage ratio of equipment) of MOCVD equipment.
The material of described treatment chamber and processing element, shape, structure, working method and making method are all same as the prior art, and the material of wherein said treatment chamber and processing element can be stupalith or alloy material.In the present embodiment, the material of described treatment chamber and processing element is alloy material, and is big because alloy material has hardness, and advantage such as have stable high-temperature performance, processing and fabricating is easy.The alloy material that is used to make treatment chamber and processing element of the present invention can be materials such as aluminium alloy or stainless steel.Compare with aluminium alloy, stainless fusing point height, high temperature undertissue Stability Analysis of Structures, therefore in the present embodiment, the alloy material of described treatment chamber and processing element is a stainless steel, described stainless steel can be the stainless steel of various different models, for example SS316L, SS304 etc., those skilled in the art can carry out concrete selection.
The material of etch-resistant layer of the present invention is a ceramic material.Described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein, perhaps described stupalith also can be the combination of above-mentioned materials and other material.
In one embodiment of the invention, the material of described treatment chamber and/or processing element is a stainless steel, and this stainless model is SS316L.
In another embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, be that described treatment chamber and/or described processing element can utilize the material identical with the material of described etch-resistant layer to make, thereby form blocky treatment chamber and/or processing element, need not after treatment chamber and/or processing element making, form etch-resistant layer on described treatment chamber and/or processing element surface specially, and also do not need to consider the stress between treatment chamber and/or processing element and the etch-resistant layer and the problem of bonding strength.
Need to prove, though described etch-resistant layer can be resisted plasma etching, but life-time service still can cause the uneven thickness of etch-resistant layer, situations such as destructurized or surface contamination, at this moment, can test, acquisition is in specific plasma body and treatment chamber, under the environment of source gas, plasma body is to the etch rate of a certain etch-resistant layer, can obtain the thickness and the life cycle (thickness/plasma body of described life cycle=etch-resistant layer is to the etch rate of etch-resistant layer) of etch-resistant layer based on this etch rate, before the life cycle of etch-resistant layer finishes, again form new etch-resistant layer on treatment chamber and/or processing element, the formation method of etch-resistant layer and plasma body will illustrate follow-up the preparation method of the etch rate of a certain etch-resistant layer.
Correspondingly, the present invention also provides a kind of making method of semiconductor processing device, please refer to the making method schema of semiconductor processing device of the present invention shown in Figure 2, and described semiconductor processing device comprises:
Step S1 provides treatment chamber or processing element, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element;
Step S2 forms etch-resistant layer on the surface that is exposed to plasma body of described treatment chamber and/or described processing element, and described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element.
Wherein, semiconductor processing device of the present invention is for producing any semiconductor processing device that plasma body and this plasma body may produce plasma damage to the processing element in treatment chamber and/or the treatment chamber in its treatment chamber, for example, described semiconductor processing device can be plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment etc.Described treatment chamber is generally vacuum chamber, can feed source gas in the described treatment chamber as reactant gases, and can produce plasma body.Described processing element is meant all building blocks that are positioned at treatment chamber inside, spray header (showerhead for example, SH), warm table (heater) etc., the surface that is exposed to part in the plasma environment and described treatment chamber in the described processing element is subjected to the damage of plasma body easily.
As an embodiment, described semiconductor processing device is a MOCVD equipment.Described treatment chamber is the treatment chamber of MOCVD equipment, and described processing element comprises the interior spray header and the warm table of processing chamber of MOCVD equipment at least.The making method of treatment chamber of the present invention and processing element is same as the prior art, and the known technology as those skilled in the art is not described in detail at this.
The material of etch-resistant layer of the present invention is a ceramic material.Described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of combination of or pottery wherein and other material.In one embodiment of the invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, promptly utilize described ceramic material to make blocky treatment chamber and/or processing element, can make the etch-resistant layer that on treatment chamber and/or processing element surface, forms have good bonding force like this, thereby improve the surface quality that forms parts.
In one embodiment of the invention, the making method of described etch-resistant layer is that plasma spraying (thermospray) technology is made.In another embodiment of the present invention, described etch-resistant layer making method also can be chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, physical gas-phase deposition, chemical sol gel process or wet chemical coating process etc., and those skilled in the art can select flexibly according to practical situation.
Correspondingly, the present invention also provides a kind of etch-resistant layer, is used to resist plasma etching, and the material of described material layer is a stupalith, and described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of combination of or pottery wherein and other material.The contriver has carried out related experiment; the etch-resistant layer that checking adopts the embodiment of the invention to provide can effectively be protected treatment chamber and/or processing element, and obtain under the situation of specific semiconductor processing equipment, specific plasma body etc. to the etch rate of specific etch-resistant layer.With MOCVD equipment is example, and as tested object, and the material of described spray header is a stainless steel with the spray header of MOCVD equipment.Particularly, please in conjunction with the showerhead configuration synoptic diagram of etch rate that is used to test etch-resistant layer of one embodiment of the invention shown in Figure 3.The middle part of spray header 100 has a plurality of holes 1001, in the outside of described spray header 100, places three test sample books, is respectively first test sample book 101, second test sample book 102 and the 3rd test sample book 103.The center on the surface of each test sample book is identical with the distance at the center of described spray header 100.
The making method of described first test sample book 101, second test sample book 102 and the 3rd test sample book 103 comprises: at first, 3 basic samples are provided, the material of described basic sample is identical with the material of described spray header 100, and the shape of described 3 basic samples, size and working method are identical, as an embodiment, the material of described basic sample is SS316L; Then, the surface of 2 basic samples forms different etch-resistant layer therein, but half area on the etch-resistant layer surface of 2 basic samples covers silicon chip, and the surface exposure of second half area; And half the surface exposure of area of remaining 1 basic sample, the surface coverage silicon chip of second half area.The position of the surface coverage silicon chip of above-mentioned 3 basic samples is identical.For example, on the surface of first basic sample, form first etch-resistant layer, the surface 1011 of half area of first etch-resistant layer is exposed, the surface 1012 of second half area covers silicon chip, with this first basic sample as first test sample book 101, as an embodiment, the material of described first etch-resistant layer 1011 is Y
2O
3Form second etch-resistant layer on the surface of second basic sample, the surface 1021 of half area of second etch-resistant layer is exposed, the surface 1022 of second half area covers silicon chip, with this second basic sample as second test sample book 102, as an embodiment, the material of described second etch-resistant layer 1021 is Al
2O
3The surface 1031 of the area of half of the 3rd substrate sample is exposed, and the surface 1032 of second half area covers silicon chip, utilizes the 3rd basic sample as the 3rd test sample book 103.
During test, described each specimen is installed in the MOCVD equipment together with spray header 100, the treatment chamber of described MOCVD adopts the mixed gas of HCl and Ar to produce acid plasma body, the throughput ratio scope of described mixed gas is 0.6: 1～1.4: 1, the pressure range of treatment chamber is 0～1.5 holder, described flow rates is 0.3～0.8slm, the frequency that produces the radio-frequency power supply of plasma body is that (range of frequency is 10～20MHz) to low frequency signal, the radio frequency power scope is 1000～2000 watts, temperature range in processing chamber during test is 300～700 degrees centigrade, the heating distance range is 10～22 millimeters, produce plasma body under these conditions and test, the test duration is greater than being at least 8 hours.
According to above-mentioned test condition, respectively according to the decrease of the thickness of first test sample book 101 and second test sample book, 102 lip-deep etch-resistant layer, and the decrease of the material on the surface that does not cover silicon chip 1031 of described the 3rd test sample book 103 (being stainless steel SS316L) thickness, in conjunction with the test duration, test the etch rate of plasma body under the above-mentioned test condition to the zone that does not cover silicon chip 1031 (being stainless steel SS316L) of the etch rate of first etch-resistant layer 1011 on first test sample book 101 and second etch-resistant layer 1021 on second test sample book 102 and the 3rd test sample book 103, calculate the relative etch rate of described first etch-resistant layer 1011 and the material (being stainless steel) in the zone that does not cover silicon chip 1031 of second etch-resistant layer, 1021 relative described the 3rd test sample books 103 then, the result is: the material for the 3rd test sample book 103 is SS316L, and material is Y
2O
3The relative etch rate of first etch-resistant layer 1011 only be 12.0% of SS316L, material is Al
2O
3The relative etch rate of second etch-resistant layer 1021 only be 22.5% of SS316L.According to above-mentioned relative etch rate, adopt same plasma body to carry out etching technics, no matter adopt the Y of first etch-resistant layer 1011
2O
3Or the Al of second etch-resistant layer 1021
2O
3, its etch rate is all much smaller than the etch rate of stainless steel layer, and therefore described etch-resistant layer has the ability of good opposing plasma etching, therefore, can be used for treatment chamber and or the protection of processing element.
Other related experiment that the contriver carries out also prove, adopt Y
2O
3The relative etch rate of stupalith be 11% of SS316L, and Al
2The relative etch rate of the stupalith of O3 is 20% of SS316L.
To sum up, the embodiment of the invention forms etch-resistant layer in the treatment chamber of semiconductor processing device and/or the surface that is exposed to plasma body of processing element, thereby when carrying out the in-situ chemical cleaning, this etch-resistant layer can be resisted the etching of plasma body, and can protect treatment chamber and/or processing element, reduce the surface damage of plasma body, in the work-ing life of improving described treatment chamber and/or processing element, reduce user's use cost described treatment chamber and/or processing element;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, thereby described treatment chamber and/or described processing element can be resisted the etching of plasma body better;
Further; material in the material of treatment chamber described in the optional embodiment of the present invention and/or described processing element and described etch-resistant layer also can be inequality; thereby after described etch-resistant layer is used for some time; can utilize cmp; clean; the method of etching or machinery is removed etch-resistant layer; again form new etch-resistant layer on the surface of described treatment chamber and/or described processing element then; to protect treatment chamber and/or processing element better; prolong the work-ing life of described treatment chamber and/or processing element, thereby further reduce user's use cost.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (11)
1. semiconductor processing device, comprise treatment chamber, described treatment chamber is used to feed source gas, the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, have a plurality of processing element in the described treatment chamber, it is characterized in that, also comprise:
Etch-resistant layer is covered in the surface that is exposed to plasma body of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body, and the material of described etch-resistant layer is a ceramic material.
2. semiconductor processing device as claimed in claim 1 is characterized in that, described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RhO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
3. semiconductor processing device as claimed in claim 1 is characterized in that, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer or inequality.
4. semiconductor processing device as claimed in claim 1 is characterized in that, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
5. the making method of a semiconductor processing device comprises:
Treatment chamber or processing element are provided, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element;
It is characterized in that, also comprise:
The surface that is exposed to plasma body in described treatment chamber and/or described processing element forms etch-resistant layer; described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element, and the material of described etch-resistant layer is a ceramic material.
6. the making method of semiconductor processing device as claimed in claim 5 is characterized in that, described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
7. the making method of semiconductor processing device as claimed in claim 5 is characterized in that, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer or inequality.
8. the making method of semiconductor processing device as claimed in claim 5 is characterized in that, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
9. the making method of semiconductor processing device as claimed in claim 5, it is characterized in that the making method of described etch-resistant layer is plasma spraying technology, chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, physical gas-phase deposition, chemical sol gel process, wet chemical coating process or combination wherein.
10. an etch-resistant layer is used to resist plasma etching, it is characterized in that, the material of described etch-resistant layer is a ceramic material, and described ceramic material is Y
2O
3, Al
2O
3, YAG, YF
3, Er
2O
3, Gd
2O
3, RuO
2, Ir
2O
3, ZrO
2, AlN, SiC, Si
3N
4In a kind of or combination wherein.
11. etch-resistant layer as claimed in claim 10, it is characterized in that described etch-resistant layer making method is plasma spraying technology, chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, physical gas-phase deposition, chemical sol gel process, wet chemical coating process or combination wherein.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102101465A CN102260855A (en) | 2011-07-26 | 2011-07-26 | Semiconductor processing apparatus with anti-etching layer and manufacturing method thereof |
| TW101126971A TW201312686A (en) | 2011-07-26 | 2012-07-26 | Anti-etching layer, semiconductor processing device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102101465A CN102260855A (en) | 2011-07-26 | 2011-07-26 | Semiconductor processing apparatus with anti-etching layer and manufacturing method thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410238194.9A Division CN103985659A (en) | 2011-07-26 | 2011-07-26 | MOCVD semiconductor processing device and manufacturing method |
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|---|---|
| CN102260855A true CN102260855A (en) | 2011-11-30 |
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| TW (1) | TW201312686A (en) |
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| TWI577820B (en) * | 2015-02-16 | 2017-04-11 | Advanced Micro-Fabrication Equipment Inc | Means for improving MOCVD reaction method and improvement method thereof |
| CN106687620A (en) * | 2014-08-08 | 2017-05-17 | 株式公司品維斯 | Cvd process chamber component having aluminum fluoride generation barrier film formed thereon |
| TWI772910B (en) * | 2019-09-30 | 2022-08-01 | 日商京瓷股份有限公司 | Plasma processing device member and plasma processing device having the same |
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| CN1489779A (en) * | 2000-12-29 | 2004-04-14 | ��ķ�о�����˾ | Zirconia toughtened ceramic components and coatings in semiconductor processing equipment and method of manufacturing thereof |
| CN101118865A (en) * | 2006-08-01 | 2008-02-06 | 应用材料股份有限公司 | Substrate support with a protective layer for plasma resistance |
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