CN102260856A - Anti-etching layer, semiconductor processing equipment and manufacture method of semiconductor processing equipment - Google Patents
Anti-etching layer, semiconductor processing equipment and manufacture method of semiconductor processing equipment Download PDFInfo
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- CN102260856A CN102260856A CN2011102101484A CN201110210148A CN102260856A CN 102260856 A CN102260856 A CN 102260856A CN 2011102101484 A CN2011102101484 A CN 2011102101484A CN 201110210148 A CN201110210148 A CN 201110210148A CN 102260856 A CN102260856 A CN 102260856A
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Abstract
The embodiment of the invention provides an anti-etching layer, semiconductor processing equipment and a manufacture method of the semiconductor processing equipment. The semiconductor processing equipment comprises a processing chamber, wherein the processing chamber is used for introducing source gases to correspondingly process the substrate placed in the processing chamber, the processing chamber is also used for holding plasmas, and the processing chamber is provided with multiple processing components; and the semiconductor processing equipment also comprises the anti-etching layer, and the anti-etching layer is covered on the surfaces exposed to the plasmas, of the processing chamber and/or the processing components and is used for resisting the plasma etching and protecting the processing chamber and/or the processing components. In the invention, the anti-etching layer is used for protecting the processing chamber and the processing components, thus protecting the processing chamber and the processing components from plasma damage and prolonging the service life of the processing chamber and the processing components.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly etch-resistant layer, semiconductor processing device and preparation method thereof.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapour deposition (Metal-organic Chemical Vapor Deposition).MOCVD is a kind of novel vapor phase epitaxial growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).It with hydride of the organic compound of III family, II family element and V, VI family element etc. as the crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Usually the crystal growth in the MOCVD system all is to carry out in cold wall quartz (stainless steel) reaction chamber of normal pressure or low pressure (10-100Torr), and adopts H
2As carrier gas (Carrier Gas), underlayer temperature is 500-1200 ℃, heats graphite base (substrate base is above graphite base), H with radio-frequency induction
2Fluid supply bubbling mode by Controllable Temperature is carried metallorganics to the vitellarium.
Specifically please in conjunction with existing MOCVD internal structure synoptic diagram shown in Figure 1.Has heating graphite base 20 in the treatment chamber 40, place some pending substrates 30 on the described heating graphite base 20, spray header (shower head, SH) 10 is staggered relatively with described heating graphite base 20 and pending substrate 30, the material of described spray header 10 is materials such as stainless steel, have a plurality of holes in the described spray header 10, this spray header 10 is sprayed on pending substrate 30 tops by described cavity with gaseous substance, above described pending substrate 30, produce chemical reaction, the reactive material that forms is deposited on the described pending substrate 30, forms epitaxial film.
In being the U.S. Patent application of US20050136188, application number can find more information about existing MOCVD equipment.
Find in practice, in the technological process of MOCVD equipment, owing between the accumulation of source material, the source material reasons such as reactive material accumulation that chemical reaction generates taking place, cause the interior processing element of MOCVD apparatus cavity inside and MOCVD equipment by above-mentioned source material or reactive material contamination, prior art adopts the in-situ chemical cleaning method regularly the treatment chamber of MOCVD equipment to be cleaned.Wherein said in-situ chemical cleaning method is for forming the plasma body that contains acid ion or alkali ion in the treatment chamber of MOCVD equipment, utilize described plasma body that the surface of the treatment chamber of MOCVD equipment and the processing element that may be polluted is cleaned, react by described plasma body and source material or reactive material described source material or reactive material are removed.
Find in practice, the plasma body that uses in the above-mentioned in-situ chemical cleaning method is when removing described source material or reactive material, can damage the inside of MOCVD apparatus cavity and the surface that processing element is exposed to plasma body, thereby can reduce the work-ing life of MOCVD apparatus cavity and processing element, increase user's use cost.
Summary of the invention
The problem that the present invention solves has provided a kind of etch-resistant layer, semiconductor processing device and preparation method thereof, be exposed to the surface formation etch-resistant layer of plasma body in the reaction chamber of MOCVD equipment surface and processing element, eliminate or reduce the reaction chamber of existing MOCVD equipment and the influence that processing element is subjected to plasma damage, improve the work-ing life of MOCVD apparatus cavity and processing element, thereby reduce user's use cost.
For addressing the above problem, the embodiment of the invention provides a kind of semiconductor processing device, comprise treatment chamber, described treatment chamber is used to feed source gas, the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, has a plurality of processing element in the described chamber, and described semiconductor processing device also comprises:
Etch-resistant layer is covered in the isoionic surface of being exposed to of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body.
Alternatively, described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
Alternatively, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the Hf.
Alternatively, the material of described treatment chamber and/or described processing element is identical or inequality with the material of described etch-resistant layer.
Alternatively, the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, aluminium alloy, nickel-chromium-ferro alloy, hastelloy, nickel-molybdenum, the nickel-chromium-molybdenum.
Alternatively, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
Correspondingly, the present invention also provides a kind of making method of semiconductor processing device, comprising:
Treatment chamber and/or processing element are provided, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element; Also comprise:
The surface that is exposed to plasma body in described treatment chamber and/or described processing element forms etch-resistant layer, and described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element.
Alternatively, described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
Alternatively, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the Hf.
Alternatively, the material of described treatment chamber and/or described processing element is identical or inequality with the material of described etch-resistant layer.
Alternatively, the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, aluminium alloy, nickel-chromium-ferro alloy, hastelloy, nickel-molybdenum, the nickel-chromium-molybdenum.
Alternatively, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
Alternatively, the making method of described etch-resistant layer is a hot-spraying techniques.
Alternatively, the making method of described surperficial etch-resistant layer is chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, plasma immersion enhancing depositing operation, physical gas-phase deposition, chemical sol gel process, wet chemical coating process.
The present invention also provides a kind of etch-resistant layer, is used to resist plasma etching, and described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
Alternatively, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the H.
Compared with prior art, the embodiment of the invention has the following advantages:
The embodiment of the invention forms etch-resistant layer in the treatment chamber of semiconductor processing device and/or the isoionic surface that is exposed to of processing element, thereby when carrying out the in-situ chemical cleaning, the etching of this etch-resistant layer opposing plasma body, and can protect treatment chamber and/or processing element, reduce the surface damage of plasma body to described treatment chamber and/or processing element, improve the work-ing life of described treatment chamber and/or processing element, reduce user's use cost;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, thereby described treatment chamber and/or described processing element can be resisted the etching of plasma body better;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is stainless steel, aluminium alloy and other alloy materials.When the material of described etch-resistant layer was a kind of in Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, the Ni-Cr-Mo alloy or combination wherein, the material of described treatment chamber and/or processing element may be identical or different with the metal or alloy material of described etch-resistant layer.With ceramic material (as Al
2O
3Or Y
2O
3) etch-resistant layer that forms compares; when the metal or alloy etch-resistant layer is coated on treatment chamber that described metal or alloy material constitutes and/or processing element surperficial; the embodiment of the invention can reduce the stress between etch-resistant layer and treatment chamber and/or the processing element; improve the bonding strength between described etch-resistant layer and described treatment chamber and/or the processing element, can protect described treatment chamber and/or processing element better.
In addition, in the embodiment of the making method of semiconductor processing device provided by the invention, the making method of described etch-resistant layer comprises that also chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, plasma immersion strengthen depositing operation, physical gas-phase deposition, the chemistry sol gel process, wet chemical coating process, and the combining of these technologies and other technology.Compare with the formed etch-resistant layer tissue of hot-spraying techniques, above-mentioned these technologies can prepare dense structure, the etch-resistant layer that defects count reduces, and technological process is to the dependency reduction of the geometrical shape of workpiece surface.So in plasma body original position cleaning process, the etch-resistant layer that these technologies form is more stable than the formed etch-resistant layer of hot-spraying techniques.
Description of drawings
Fig. 1 is the structural representation of existing MOCVD equipment;
Fig. 2 is the making method schematic flow sheet of semiconductor processing device of the present invention;
Fig. 3 is the showerhead configuration synoptic diagram of etch rate that is used to test etch-resistant layer of one embodiment of the invention.
Embodiment
For utilizing plasma to carry out the equipment of art breading, for example plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD (utilizing plasma body that treatment chamber and processing element are cleaned), its treatment chamber and processing element are subjected to the etching injury of plasma body easily, the embodiment of the invention proposes a kind of semiconductor processing device, comprising:
Treatment chamber, described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, has a plurality of processing element in the described chamber, and described semiconductor processing device also comprises:
Etch-resistant layer is covered in the isoionic surface of being exposed to of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body.
Semiconductor processing device of the present invention is to produce any semiconductor processing device that plasma body and this plasma body may produce plasma damage to the processing element in treatment chamber and/or the treatment chamber in the treatment chamber, for example, described semiconductor processing device can be plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment etc.Described treatment chamber is generally vacuum chamber, can feed source gas in the described treatment chamber as reactant gases, and can produce plasma body.Described processing element is meant all building blocks that are positioned at treatment chamber inside, spray header (showerhead for example, SH), warm table (heater) etc., the surface that is exposed to part in the plasma environment and described treatment chamber in the described processing element is subjected to the damage of plasma body easily.
As an embodiment, described semiconductor processing device is a MOCVD equipment, because MOCVD equipment normally carries out the process operation of long-time (6～9 hours) under high temperature (500～1200 degrees centigrade) environment, therefore, higher to the specification of quality of its treatment chamber and processing element.When utilizing plasma body that treatment chamber and/or processing element are cleaned, if damage treatment chamber and/or processing element, the yield of easier reduction product and cause the technology trouble (can influence the MOCVD usage ratio of equipment) of MOCVD equipment.
The material of described treatment chamber and processing element, shape, structure, working method and making method are all same as the prior art, and the material of wherein said treatment chamber and processing element can be stupalith or alloy material.In the present embodiment, the material of described treatment chamber and processing element is alloy material, and is big because alloy material has hardness, and advantage such as have stable high-temperature performance, processing and fabricating is easy.The alloy material that is used to make treatment chamber and processing element of the present invention can be materials such as aluminium alloy or stainless steel.Compare with aluminium alloy, internal structure remains unchanged under stainless fusing point height, the high temperature, therefore in the present embodiment, the alloy material of described treatment chamber and processing element is a stainless steel, described stainless steel can be the stainless steel of various different models, for example SS316L, SS304 etc., those skilled in the art can carry out concrete selection.Certainly, the material of described treatment chamber and processing element also can be a kind of in, aluminium alloy, nickel-chromium-ferro alloy, hastelloy (Hastalloy), nickel-molybdenum, the nickel-chromium-molybdenum or combination wherein.
The material of etch-resistant layer of the present invention is the metal or alloy material, and described metal should be including, but not limited to metals such as Y, Ni, Cr, Mo, Ta, W; Described alloy should be a kind of or combination wherein in the alloys such as Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, Ni-Cr-Mo.In order further to strengthen the anti-etching performance of etch-resistant layer, can also in described etch-resistant layer, add the metallic element of trace, with the further performance of improving etch-resistant layer, can add Al, Ti, Co, Er, Mn, V, N, the Nb of trace, in the metallic elements such as Re, Hf one or more in for example described etch-resistant layer.Need to prove that when the material of described treatment chamber and/or processing element was metal or alloy, the material that is used to make described etch-resistant layer may be different with the material of described treatment chamber and/or processing element.With ceramic material (as Al
2O
3Or Y
2O
3) etch-resistant layer that forms compares; when the metal or alloy etch-resistant layer is coated on treatment chamber that described metal or alloy material constitutes and/or processing element surperficial; the embodiment of the invention can reduce the stress between etch-resistant layer and treatment chamber and/or the processing element; improve the bonding strength between described etch-resistant layer and described treatment chamber and/or the processing element, can protect described treatment chamber and/or processing element better.
In one embodiment of the invention, the material of described treatment chamber and/or processing element is a stainless steel, and this stainless model is SS316L, and described etch-resistant layer material is Inconel or Hastalloy alloy.
In another embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, be that described treatment chamber and/or described processing element can utilize the material identical with the material of described etch-resistant layer to make, thereby form blocky treatment chamber and/or processing element, need not after treatment chamber and/or processing element making, form etch-resistant layer on described treatment chamber and/or processing element surface specially, and also do not need to consider the stress between treatment chamber and/or processing element and the etch-resistant layer and the problem of bonding strength.
In one embodiment of the invention, the material of described treatment chamber and/or processing element and etch-resistant layer is SS316L, Inconel or Hastalloy alloy.
Need to prove that though described etch-resistant layer can be resisted plasma etching, life-time service still can cause situations such as the uneven thickness of etch-resistant layer, destructurized or surface contamination.At this moment, can test, acquisition is under the environment of specific plasma body and treatment chamber, source gas, plasma body can obtain the thickness and the life cycle (being the etch rate of the thickness/plasma body of described life cycle=etch-resistant layer to etch-resistant layer) of etch-resistant layer to the etch rate of a certain etch-resistant layer based on this etch rate.Before the life cycle of etch-resistant layer finishes, on treatment chamber and/or processing element, form new etch-resistant layer again, the formation method of etch-resistant layer and plasma body will illustrate follow-up the preparation method of the etch rate of a certain etch-resistant layer.
Correspondingly, the present invention also provides a kind of making method of semiconductor processing device, please refer to the making method schema of semiconductor processing device of the present invention shown in Figure 2, and described semiconductor processing device comprises:
Step S1 provides treatment chamber and/or processing element, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element; Also comprise:
Step S2 forms etch-resistant layer on the surface that is exposed to plasma body of described treatment chamber and/or described processing element, and described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element.
Wherein, semiconductor processing device of the present invention is to produce any semiconductor processing device that plasma body and this plasma body may produce plasma damage to the processing element in treatment chamber and/or the treatment chamber in the treatment chamber, for example, described semiconductor processing device can be plasma etching equipment, plasma enhanced chemical vapor deposition equipment, MOCVD equipment etc.Described treatment chamber is generally vacuum chamber, can feed source gas in the described treatment chamber as reactant gases, and can produce plasma body.Described processing element is meant all building blocks that are positioned at treatment chamber inside, spray header (showerhead for example, SH), warm table (heater) etc., the surface that is exposed to part in the plasma environment and described treatment chamber in the described processing element is subjected to the damage of plasma body easily.
As an embodiment, described semiconductor processing device is a MOCVD equipment.Described treatment chamber is the treatment chamber of MOCVD equipment, and described processing element comprises the interior spray header and the warm table of processing chamber of MOCVD equipment at least.The making method of treatment chamber of the present invention and processing element is same as the prior art, and the known technology as those skilled in the art is not described in detail at this.
The material of etch-resistant layer of the present invention is the metal or alloy material, and described metal should be a kind of or combination wherein in the metals such as Y, Ni, Cr, Mo, Ta, W; Described alloy should be a kind of or combination wherein in the alloys such as Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, Ni-Cr-Mo.In order further to strengthen the anti-etching performance of etch-resistant layer, described metal or alloy also should be including but not limited in the metallic elements such as Al, Ti, Co, Er, Mn, V, N, Nb, Re, Hf one or more.
In one embodiment of the invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, promptly utilize described alloy material to make blocky treatment chamber and/or processing element, can utilize incorporate technology to form treatment chamber and/or processing element and etch-resistant layer like this, thereby save processing step.
In other embodiment of this aspect, the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, the aluminium alloy, and described etch-resistant layer material is the metal or alloy material.Described metal should be a kind of or combination wherein in the metals such as Y, Ni, Cr, Mo, Ta, W; Described alloy should be a kind of or combination wherein in the alloys such as Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, Ni-Cr-Mo.In order further to strengthen the anti-etching performance of etch-resistant layer, described metal or alloy also should be including but not limited in the metallic elements such as Al, Ti, Co, Er, Mn, V, N, Nb, Re, Hf one or more.As an embodiment, described treatment chamber and/or described processing element adopt the comparatively stable stainless steel of performance to make, and model is SS316L, and described etch-resistant layer adopts Inconel or Hastalloy alloy to make.Utilize identical material to compare with the material of described treatment chamber and/or processing element, adopt stainless steel to make treatment chamber and/or processing element, adopt Inconel or Hastalloy alloy to make etch-resistant layer, can reduce the cost of MOCVD equipment.
The making method of described etch-resistant layer is a hot-spraying techniques.Before carrying out described hot-spraying techniques, roughening treatment is carried out on the surface that also needs the needs of described treatment chamber and/or processing element to be formed etch-resistant layer.Described roughening treatment can be removed the pollutent on the surface of described etch-resistant layer on the one hand; can also form small uneven surface on the described surface that needs to form etch-resistant layer on the other hand; help improving the bonding force between the surface that etch-resistant layer and described needs form etch-resistant layer; make described etch-resistant layer be attached to the surface of described treatment chamber and/or processing element better, protect described treatment chamber and/or processing element better.As an embodiment, described roughening treatment utilizes the grains of sand or ceramic particle to be polished in the surface of described treatment chamber and/or processing element.
In addition, in the embodiment of the making method of semiconductor processing device provided by the invention, the making method of described etch-resistant layer comprises that also chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, plasma immersion strengthen depositing operation, physical gas-phase deposition, the chemistry sol gel process, wet chemical coating process, and the combining of these technologies and other technology.Compare with the formed etch-resistant layer tissue of hot-spraying techniques, above-mentioned these technologies can prepare dense structure, the etch-resistant layer that defects count reduces, and technological process is little to the dependency of the geometrical shape of workpiece surface.So in plasma body original position cleaning process, the etch-resistant layer that these technologies form is more stable than the formed etch-resistant layer of hot-spraying techniques.
Correspondingly, the present invention also provides correspondingly, and the present invention also provides a kind of etch-resistant layer, is used to resist plasma etching, and described etch-resistant layer material is the metal or alloy material.Described metal should be including, but not limited to metals such as Y, Ni, Cr, Mo, Ta, W; Described alloy should be a kind of or combination wherein in the alloys such as Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, Ni-Cr-Mo.In order further to strengthen the anti-etching performance of etch-resistant layer, can also in described etch-resistant layer, add Al, Ti, Co, Er, Mn, V, N, Nb, the metallic elements such as Re, Hf of trace.As one embodiment of the present of invention, described alloy material is Inconel or Hastalloy alloy.
The contriver has carried out related experiment; the etch-resistant layer that checking adopts the embodiment of the invention to provide can effectively be protected treatment chamber and/or processing element, and obtain under the situation of specific semiconductor processing equipment, specific plasma body to the etch rate of specific etch-resistant layer.With MOCVD equipment is example, and the treatment chamber of the MOCVD equipment that is used to test and processing element (for example spray header) are stainless steel.
Particularly, please in conjunction with the showerhead configuration synoptic diagram of etch rate that is used to test etch-resistant layer of one embodiment of the invention shown in Figure 3.The middle part of spray header 100 has a plurality of holes 1001, in the outside of described spray header 100, places three test sample books, is respectively first test sample book, 101, the second test sample books, 102, the three test sample books 103.The center on the surface of each test sample book is identical with the distance at the center of described spray header 100.The making method of described first test sample book 101, second test sample book 102 and the 3rd test sample book 103 comprises: at first, 3 basic samples are provided, the material of described basic sample is identical with the material of described spray header 100, and the shape of described 3 basic samples, size and working method are identical, as an embodiment, the material of described basic sample is SS316L; Then, the surface of 2 basic samples forms different etch-resistant layer therein, but the surface of half area of the last etch-resistant layer of two basic samples covers with silicon chip, and the surface exposure of second half area of described etch-resistant layer; And half the surface exposure of area of remaining 1 basic sample, the surface of second half area also covers silicon chip.The position of the covering silicon chip of above-mentioned 3 basic samples is identical.For example, on the surface of first basic sample, form first etch-resistant layer, the surface 1011 of first half area of etch-resistant layer is exposed, the surface 1012 of second half area is covered by silicon chip, with this first basic sample as first test sample book 101, as an embodiment, the material of described first etch-resistant layer 1011 is Hastalloy; Form second etch-resistant layer on the surface of second basic sample, the surface 1021 of half area of second etch-resistant layer is exposed, the surface 1022 of second half area is covered by silicon chip, with this second basic sample as second test sample book 102, as an embodiment, the material Inconel of described second etch-resistant layer 1021; The surface 1031 of the area of half of the 3rd basic sample is exposed, and the surface of second half area 1032 is covered by silicon chip, utilizes the 3rd basic sample as the 3rd test sample book 103.
During test, described each specimen is installed in the MOCVD equipment together with spray header 100, the treatment chamber of described MOCVD adopts the mixed gas of HCl and Ar to produce acid plasma body, the throughput ratio scope of described mixed gas is 0.6: 1～1.4: 1, the pressure range of treatment chamber is 0～1.5 holder, described flow rates is 0.3～0.8slm, the frequency that produces the radio-frequency power supply of plasma body is that (range of frequency is 10～20MHz) to low frequency signal, the radio frequency power scope is 1000～2000 watts, temperature range in processing chamber during test is 300～700 degrees centigrade, the heating distance range is 10～22 millimeters, produce plasma body under these conditions and test, the test duration is greater than being at least 8 hours.
According to above-mentioned test condition, respectively according to the decrease of the thickness of the etch-resistant layer in first test sample book 101 and second test sample book 102, and the decrease of the material on the surface that does not cover silicon chip 1031 of described the 3rd test sample book 103 (being stainless steel SS316L) thickness, in conjunction with the test duration, test the etch rate of plasma body under the above-mentioned test condition to the zone that does not cover silicon chip 1031 (being stainless steel SS316L) of the etch rate of first etch-resistant layer 1011 on first test sample book 101 and second etch-resistant layer 1021 on second test sample book 102 and the 3rd test sample book 103, calculate the relative etch rate of described first etch-resistant layer 1011 and the material (being stainless steel) in the zone that does not cover silicon chip 1031 of second etch-resistant layer, 1021 relative described the 3rd test sample books 103 then, the result is: the material for the 3rd test sample book 103 is SS316L, material is that the relative etch rate of first etch-resistant layer 1011 of Hastalloy only is 36.0% of SS316L, and material is that the relative etch rate of second etch-resistant layer 1021 of Inconel only is 41.0% of SS316L.According to above-mentioned relative etch rate; adopt same plasma body to carry out etching technics; no matter adopt the Hastalloy of first etch-resistant layer 1011 or the Inconel of second etch-resistant layer 1021; its etch rate is all much smaller than the etch rate of stainless steel layer; therefore described etch-resistant layer has the ability of good opposing plasma etching; therefore, can be used for treatment chamber and or the protection of processing element.
To sum up, the embodiment of the invention forms etch-resistant layer in the treatment chamber of semiconductor processing device and/or the isoionic surface that is exposed to of processing element, thereby when carrying out the in-situ chemical cleaning, the etching of this etch-resistant layer opposing plasma body, and can protect treatment chamber and/or processing element, reduce the surface damage of plasma body, in the work-ing life of improving described treatment chamber and/or processing element, reduce user's use cost described treatment chamber and/or processing element;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer, thereby described treatment chamber and/or described processing element can be resisted the etching of plasma body better;
Further, in optional embodiment of the present invention, the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, the aluminium alloy, when the material of described etch-resistant layer was a kind of in Cr-Ni-Fe, Inconel, Hastalloy, Ni-Mo, the Ni-Cr-Mo alloy or combination wherein, the material of described treatment chamber and/or processing element may be identical or different with the metal or alloy material of described etch-resistant layer.With ceramic material (as Al
2O
3Or Y
2O
3) etch-resistant layer that forms compares, when the metal or alloy etch-resistant layer is coated on treatment chamber that described metal or alloy material constitutes and/or processing element surperficial, the embodiment of the invention can reduce the stress between etch-resistant layer and treatment chamber and/or the processing element, improve the bonding strength between described etch-resistant layer and described treatment chamber and/or the processing element, can protect described treatment chamber and/or processing element better;
In addition, in the embodiment of the making method of semiconductor processing device provided by the invention, the making method of described etch-resistant layer comprises that also chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, plasma immersion strengthen depositing operation, physical gas-phase deposition, the chemistry sol gel process, wet chemical coating process, and the combining of these technologies and other technology.Compare with the formed etch-resistant layer tissue of hot-spraying techniques, above-mentioned these technologies can prepare dense structure, the etch-resistant layer that defects count reduces, and technological process is little to the dependency of the geometrical shape of workpiece surface.So in plasma body original position cleaning process, the etch-resistant layer that these technologies form is more stable than the formed etch-resistant layer of hot-spraying techniques.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (16)
1. a semiconductor processing device comprises treatment chamber, and described treatment chamber is used to feed source gas, the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body, has a plurality of processing element in the described chamber, it is characterized in that, also comprise:
Etch-resistant layer is covered in the isoionic surface of being exposed to of described treatment chamber and/or processing element, and described etch-resistant layer is used to resist etching and the described treatment chamber of protection and/or the processing element of plasma body.
2. semiconductor processing device as claimed in claim 1 is characterized in that, described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
3. semiconductor processing device as claimed in claim 2 is characterized in that, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the Hf.
4. semiconductor processing device as claimed in claim 2 is characterized in that, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer or inequality.
5. semiconductor processing device as claimed in claim 1, it is characterized in that the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, aluminium alloy, nickel-chromium-ferro alloy, hastelloy, nickel-molybdenum, the nickel-chromium-molybdenum.
6. semiconductor processing device as claimed in claim 1 is characterized in that, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
7. the making method of a semiconductor processing device comprises:
Treatment chamber and/or processing element are provided, and described treatment chamber is used to feed source gas, and the substrate that is positioned in the treatment chamber is carried out respective handling, and described treatment chamber also is used to hold plasma body and described processing element;
It is characterized in that, also comprise:
The surface that is exposed to plasma body in described treatment chamber and/or described processing element forms etch-resistant layer, and described etch-resistant layer is used to resist plasma etching and described treatment chamber of protection and/or processing element.
8. the making method of semiconductor processing device as claimed in claim 7 is characterized in that, described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
9. the making method of semiconductor processing device as claimed in claim 8 is characterized in that, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the Hf.
10. the making method of semiconductor processing device as claimed in claim 7 is characterized in that, the material of described treatment chamber and/or described processing element is identical with the material of described etch-resistant layer or inequality.
11. the making method of semiconductor processing device as claimed in claim 7, it is characterized in that the material of described treatment chamber and/or described processing element is a kind of or combination wherein in stainless steel, aluminium alloy, nickel-chromium-ferro alloy, hastelloy, nickel-molybdenum, the nickel-chromium-molybdenum.
12. the making method of semiconductor processing device as claimed in claim 7 is characterized in that, described semiconductor processing device is MOCVD equipment, plasma etching equipment or plasma enhanced chemical vapor deposition equipment.
13. the making method of semiconductor processing device as claimed in claim 7 is characterized in that, the making method of described etch-resistant layer is a hot-spraying techniques.
14. the making method of semiconductor processing device as claimed in claim 7, it is characterized in that the making method of described surperficial etch-resistant layer is chemical vapor deposition method, plasma enhanced chemical vapor deposition technology, plasma immersion enhancing depositing operation, physical gas-phase deposition, chemical sol gel process, wet chemical coating process.
15. an etch-resistant layer is used to resist plasma etching, it is characterized in that, described etch-resistant layer is a kind of or combination wherein in nichrome, nickel-molybdenum alloy, Ni-Cr-Mo alloy, the hastelloy.
16. etch-resistant layer as claimed in claim 15 is characterized in that, described etch-resistant layer also comprises one or more metallic elements among Al, Ti, Co, Er, Mn, V, N, Nb, Re, the H.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102101484A CN102260856A (en) | 2011-07-26 | 2011-07-26 | Anti-etching layer, semiconductor processing equipment and manufacture method of semiconductor processing equipment |
| TW101126972A TW201316401A (en) | 2011-07-26 | 2012-07-26 | Anti-etching layer, semiconductor processing device and its fabrication method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102101484A CN102260856A (en) | 2011-07-26 | 2011-07-26 | Anti-etching layer, semiconductor processing equipment and manufacture method of semiconductor processing equipment |
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| CN102260856A true CN102260856A (en) | 2011-11-30 |
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| CN2011102101484A Pending CN102260856A (en) | 2011-07-26 | 2011-07-26 | Anti-etching layer, semiconductor processing equipment and manufacture method of semiconductor processing equipment |
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| CN (1) | CN102260856A (en) |
| TW (1) | TW201316401A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637573A (en) * | 2012-04-28 | 2012-08-15 | 中微半导体设备(上海)有限公司 | Semiconductor processing device and manufacture method thereof |
| CN103255409A (en) * | 2013-05-13 | 2013-08-21 | 上海大学 | Method of preparing stainless steel coating on surface of low carbon steel based on nanotechnology |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112553598B (en) * | 2019-09-25 | 2023-03-28 | 中微半导体设备(上海)股份有限公司 | Method for enhancing repair of anodic oxidation coating of etching equipment component by using ALD (atomic layer deposition) technology |
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| CN1341158A (en) * | 1999-12-28 | 2002-03-20 | 东芝株式会社 | Parts for vacuum film-forming device and vacuum film-forming device using the same and board device thereof |
| CN1489779A (en) * | 2000-12-29 | 2004-04-14 | ��ķ�о�����˾ | Zirconia toughtened ceramic components and coatings in semiconductor processing equipment and method of manufacturing thereof |
| US20040219354A1 (en) * | 2003-05-02 | 2004-11-04 | Deloro Stellite Company | Wear-resistant, corrosion-resistant Ni-Cr-Mo thermal spray powder and method |
| CN1643178A (en) * | 2002-03-21 | 2005-07-20 | 兰姆研究公司 | Low contamination components for semiconductor processing apparatus and methods for making components |
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| CN1341158A (en) * | 1999-12-28 | 2002-03-20 | 东芝株式会社 | Parts for vacuum film-forming device and vacuum film-forming device using the same and board device thereof |
| CN1489779A (en) * | 2000-12-29 | 2004-04-14 | ��ķ�о�����˾ | Zirconia toughtened ceramic components and coatings in semiconductor processing equipment and method of manufacturing thereof |
| CN1643178A (en) * | 2002-03-21 | 2005-07-20 | 兰姆研究公司 | Low contamination components for semiconductor processing apparatus and methods for making components |
| US20040219354A1 (en) * | 2003-05-02 | 2004-11-04 | Deloro Stellite Company | Wear-resistant, corrosion-resistant Ni-Cr-Mo thermal spray powder and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102637573A (en) * | 2012-04-28 | 2012-08-15 | 中微半导体设备(上海)有限公司 | Semiconductor processing device and manufacture method thereof |
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| CN103255409A (en) * | 2013-05-13 | 2013-08-21 | 上海大学 | Method of preparing stainless steel coating on surface of low carbon steel based on nanotechnology |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201316401A (en) | 2013-04-16 |
| TWI517244B (en) | 2016-01-11 |
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