CN102244018B - 芯片埋入式印刷电路板的制造方法 - Google Patents
芯片埋入式印刷电路板的制造方法 Download PDFInfo
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- CN102244018B CN102244018B CN2010101759849A CN201010175984A CN102244018B CN 102244018 B CN102244018 B CN 102244018B CN 2010101759849 A CN2010101759849 A CN 2010101759849A CN 201010175984 A CN201010175984 A CN 201010175984A CN 102244018 B CN102244018 B CN 102244018B
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- metal electrode
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- printed circuit
- circuit board
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052802 copper Inorganic materials 0.000 claims abstract description 41
- 239000010949 copper Substances 0.000 claims abstract description 41
- 238000009713 electroplating Methods 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims description 45
- 229920005989 resin Polymers 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 23
- 239000002390 adhesive tape Substances 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910008599 TiW Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 7
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- 238000004021 metal welding Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 6
- 238000005553 drilling Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000004382 potting Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101759849A CN102244018B (zh) | 2010-05-14 | 2010-05-14 | 芯片埋入式印刷电路板的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101759849A CN102244018B (zh) | 2010-05-14 | 2010-05-14 | 芯片埋入式印刷电路板的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102244018A CN102244018A (zh) | 2011-11-16 |
CN102244018B true CN102244018B (zh) | 2013-08-28 |
Family
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Family Applications (1)
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CN2010101759849A Active CN102244018B (zh) | 2010-05-14 | 2010-05-14 | 芯片埋入式印刷电路板的制造方法 |
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CN (1) | CN102244018B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103594462A (zh) * | 2013-11-07 | 2014-02-19 | 昆山开威电子有限公司 | Led集成封装结构及其封装方法 |
EP3235354B1 (en) | 2014-12-16 | 2024-01-24 | AT & S Austria Technologie & Systemtechnik Aktiengesellschaft | Contacting embedded electronic component via wiring structure in a component carrier's surface portion with homogeneous ablation properties |
US10910917B2 (en) * | 2018-02-12 | 2021-02-02 | Beijing E. Motor Advance Co. Ltd. | Compact thermally efficient traction motor inverter |
CN110571229A (zh) * | 2018-06-05 | 2019-12-13 | 深南电路股份有限公司 | 一种埋入式光感模组及其制造方法 |
CN110769598B (zh) * | 2018-07-27 | 2021-11-16 | 宏启胜精密电子(秦皇岛)有限公司 | 内埋式电路板及其制作方法 |
CN112840451B (zh) * | 2019-09-24 | 2022-10-18 | 宏启胜精密电子(秦皇岛)有限公司 | 封装结构及其制造方法 |
CN112838016B (zh) * | 2021-01-16 | 2023-04-28 | 北京工业大学 | 一种埋入基板的芯片增厚方法 |
CN114234881A (zh) * | 2021-12-06 | 2022-03-25 | 汕头超声印制板(二厂)有限公司 | 一种检测超薄干膜厚度的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1722935A (zh) * | 2004-07-14 | 2006-01-18 | 三星电机株式会社 | 包含嵌入式无源芯片的pcb的制造方法 |
KR20070030020A (ko) * | 2005-09-12 | 2007-03-15 | 삼성전기주식회사 | 칩 내장형 인쇄회로기판의 제조방법 |
CN101359639A (zh) * | 2007-07-31 | 2009-02-04 | 全懋精密科技股份有限公司 | 埋入半导体芯片的电路板结构及其制法 |
-
2010
- 2010-05-14 CN CN2010101759849A patent/CN102244018B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1722935A (zh) * | 2004-07-14 | 2006-01-18 | 三星电机株式会社 | 包含嵌入式无源芯片的pcb的制造方法 |
KR20070030020A (ko) * | 2005-09-12 | 2007-03-15 | 삼성전기주식회사 | 칩 내장형 인쇄회로기판의 제조방법 |
CN101359639A (zh) * | 2007-07-31 | 2009-02-04 | 全懋精密科技股份有限公司 | 埋入半导体芯片的电路板结构及其制法 |
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CN102244018A (zh) | 2011-11-16 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: SHENNAN CIRCUIT CO., LTD. Free format text: FORMER NAME: SHENZHEN SHENNAN CIRCUITS CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: 518057, No. 99, East Road, overseas Chinese town, Shenzhen, Guangdong, Nanshan District Patentee after: SHENZHEN SHENNAN CIRCUIT CO., LTD. Address before: 518057, No. 99, East Road, overseas Chinese town, Shenzhen, Guangdong, Nanshan District Patentee before: Shenzhen Shennan Circuits Co., Ltd. |
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Owner name: WUXI TIANXIN NETWORK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHENNAN CIRCUIT CO., LTD. Effective date: 20150612 |
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Effective date of registration: 20150612 Address after: 214062 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park F District Service Building East Building Patentee after: Wuxi sky Interconnect Technology Co., Ltd. Address before: 518057, No. 99, East Road, overseas Chinese town, Shenzhen, Guangdong, Nanshan District Patentee before: SHENZHEN SHENNAN CIRCUIT CO., LTD. |
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Address after: 518000 No.3 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Tianxin Internet Technology Co., Ltd Address before: 214062 Jiangsu New District of Wuxi City Linghu Road No. 200 Chinese Sensor Network International Innovation Park F District Service Building East Building Patentee before: WUXI SKY CHIP INTERCONNECTION TECHNOLOGY Co.,Ltd. |
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