CN102227000A - 基于超级结的碳化硅mosfet器件及制备方法 - Google Patents
基于超级结的碳化硅mosfet器件及制备方法 Download PDFInfo
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- CN102227000A CN102227000A CN2011101692858A CN201110169285A CN102227000A CN 102227000 A CN102227000 A CN 102227000A CN 2011101692858 A CN2011101692858 A CN 2011101692858A CN 201110169285 A CN201110169285 A CN 201110169285A CN 102227000 A CN102227000 A CN 102227000A
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- silicon carbide
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- mosfet device
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 16
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- 239000002184 metal Substances 0.000 claims description 15
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- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 13
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- 229910001069 Ti alloy Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
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- 229910052734 helium Inorganic materials 0.000 claims description 4
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- 230000015556 catabolic process Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
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CN2011101692858A CN102227000B (zh) | 2011-06-23 | 2011-06-23 | 基于超级结的碳化硅mosfet器件及制备方法 |
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CN2011101692858A CN102227000B (zh) | 2011-06-23 | 2011-06-23 | 基于超级结的碳化硅mosfet器件及制备方法 |
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CN102227000A true CN102227000A (zh) | 2011-10-26 |
CN102227000B CN102227000B (zh) | 2013-02-27 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610500A (zh) * | 2012-03-22 | 2012-07-25 | 西安电子科技大学 | N型重掺杂碳化硅薄膜外延制备方法 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
CN103456616A (zh) * | 2013-09-02 | 2013-12-18 | 上海华力微电子有限公司 | 制备栅氧层的工艺 |
CN103928309A (zh) * | 2014-04-21 | 2014-07-16 | 西安电子科技大学 | N沟道碳化硅绝缘栅双极型晶体管的制备方法 |
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN106206734A (zh) * | 2016-07-11 | 2016-12-07 | 中国科学院微电子研究所 | 一种超结mos晶体管 |
CN107256864A (zh) * | 2017-06-09 | 2017-10-17 | 电子科技大学 | 一种碳化硅TrenchMOS器件及其制作方法 |
CN107275393A (zh) * | 2016-04-08 | 2017-10-20 | 株洲中车时代电气股份有限公司 | 碳化硅mosfet器件及其制备方法 |
WO2017201709A1 (zh) * | 2016-05-26 | 2017-11-30 | 中山港科半导体科技有限公司 | 一种坚固的功率半导体场效应晶体管结构 |
CN109461659A (zh) * | 2018-11-08 | 2019-03-12 | 中国科学院微电子研究所 | 碳化硅mosfet器件及其制备方法 |
CN110473911A (zh) * | 2019-09-06 | 2019-11-19 | 芜湖启迪半导体有限公司 | 一种SiC MOSFET器件及其制作方法 |
CN111584634A (zh) * | 2020-05-09 | 2020-08-25 | 杰华特微电子(杭州)有限公司 | 半导体器件及其制造方法 |
US11894457B2 (en) | 2020-05-09 | 2024-02-06 | Joulwatt Technology Co., Ltd. | Semiconductor device and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216275A (en) * | 1991-03-19 | 1993-06-01 | University Of Electronic Science And Technology Of China | Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
CN101950759A (zh) * | 2010-08-27 | 2011-01-19 | 电子科技大学 | 一种Super Junction VDMOS器件 |
-
2011
- 2011-06-23 CN CN2011101692858A patent/CN102227000B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216275A (en) * | 1991-03-19 | 1993-06-01 | University Of Electronic Science And Technology Of China | Semiconductor power devices with alternating conductivity type high-voltage breakdown regions |
CN101950759A (zh) * | 2010-08-27 | 2011-01-19 | 电子科技大学 | 一种Super Junction VDMOS器件 |
Non-Patent Citations (1)
Title |
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田波,程序,亢宝位: "超结理论的产生与发展", 《微电子学》 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610500A (zh) * | 2012-03-22 | 2012-07-25 | 西安电子科技大学 | N型重掺杂碳化硅薄膜外延制备方法 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
CN103456616A (zh) * | 2013-09-02 | 2013-12-18 | 上海华力微电子有限公司 | 制备栅氧层的工艺 |
CN103928309A (zh) * | 2014-04-21 | 2014-07-16 | 西安电子科技大学 | N沟道碳化硅绝缘栅双极型晶体管的制备方法 |
CN103928309B (zh) * | 2014-04-21 | 2017-02-08 | 西安电子科技大学 | N沟道碳化硅绝缘栅双极型晶体管的制备方法 |
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN104241348B (zh) * | 2014-08-28 | 2018-03-27 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN107275393A (zh) * | 2016-04-08 | 2017-10-20 | 株洲中车时代电气股份有限公司 | 碳化硅mosfet器件及其制备方法 |
WO2017201709A1 (zh) * | 2016-05-26 | 2017-11-30 | 中山港科半导体科技有限公司 | 一种坚固的功率半导体场效应晶体管结构 |
CN106206734A (zh) * | 2016-07-11 | 2016-12-07 | 中国科学院微电子研究所 | 一种超结mos晶体管 |
CN106206734B (zh) * | 2016-07-11 | 2019-10-29 | 中国科学院微电子研究所 | 一种超结mos晶体管 |
CN107256864A (zh) * | 2017-06-09 | 2017-10-17 | 电子科技大学 | 一种碳化硅TrenchMOS器件及其制作方法 |
CN107256864B (zh) * | 2017-06-09 | 2019-05-10 | 电子科技大学 | 一种碳化硅TrenchMOS器件及其制作方法 |
CN109461659A (zh) * | 2018-11-08 | 2019-03-12 | 中国科学院微电子研究所 | 碳化硅mosfet器件及其制备方法 |
CN110473911A (zh) * | 2019-09-06 | 2019-11-19 | 芜湖启迪半导体有限公司 | 一种SiC MOSFET器件及其制作方法 |
CN110473911B (zh) * | 2019-09-06 | 2024-03-12 | 安徽长飞先进半导体有限公司 | 一种SiC MOSFET器件及其制作方法 |
CN111584634A (zh) * | 2020-05-09 | 2020-08-25 | 杰华特微电子(杭州)有限公司 | 半导体器件及其制造方法 |
US11894457B2 (en) | 2020-05-09 | 2024-02-06 | Joulwatt Technology Co., Ltd. | Semiconductor device and manufacturing method thereof |
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CN102227000B (zh) | 2013-02-27 |
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