CN102222624A - 一种单晶铜丝的制备方法 - Google Patents
一种单晶铜丝的制备方法 Download PDFInfo
- Publication number
- CN102222624A CN102222624A CN2011101523370A CN201110152337A CN102222624A CN 102222624 A CN102222624 A CN 102222624A CN 2011101523370 A CN2011101523370 A CN 2011101523370A CN 201110152337 A CN201110152337 A CN 201110152337A CN 102222624 A CN102222624 A CN 102222624A
- Authority
- CN
- China
- Prior art keywords
- copper wire
- wire
- preparation
- monocrystalline
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal Extraction Processes (AREA)
- Wire Bonding (AREA)
Abstract
一种单晶铜丝的制备方法,涉及一种铜丝的制备方法。将单晶铜铜杆依次拉制成Φ0.95mm,Φ0.261mm,Φ0.099mm,Φ0.0311mm,Φ0.0160mm的铜丝,然后在H2和N2的保护下,将所得的Φ0.0160mm铜丝进行热处理,再将热处理后的铜丝进行清洗,即得单晶铜丝。由于经过5次拉伸及退火,因此不仅在0.015mm时铜丝的微观结构更加完美,力学及电学性能更好,而且可以拉出直径小于0.015的铜丝。经检验,制备的单晶铜丝呈现***光泽,表面清洁,在显微镜下观看无玷污无缺陷;力学性能要满足标准YS/T678-2008的要求。
Description
技术领域
本发明涉及一种铜丝的制备方法,尤其是涉及一种单晶铜丝的制备方法。
背景技术
随着集成电路及半导体器件向封装多引线化、高集成度和小型化发展,为了进行窄间距、长距离的键合,要求制备出线径更细、电学性能更好的键合丝,高纯度、耐高温、超细键合丝越来越受到人们的重视(伍隽,杨邦朝.IC 封装材料市场分析[J].电子与封装,2002,2(3):7-10)。此外,芯片密度的不断提高,对键合材料的导热性和可靠性提出了更高的要求,传统的金丝、铝丝由于难以满足高密度、高集成度半导体元器件的键合引线要求。而单晶铜丝由于其高的电导率,优良的力学性能和热学性能,在很大程度上提高了芯片频率和可靠性,适应了低成本、细间距、高引出端元器件封装的发展,成为替代传统键合丝的最佳材料。
中国专利200610154487.4公开了一种键合铜丝及其制备方法。用纯度为99.99wt%的铜电解提纯出纯度为99.999wt%的铜;经金属单晶水平连铸方法制作出纯度为99.9999wt%的单晶铜;制作中间合金;将纯度为99.9999wt%的单晶铜与中间合金经金属单晶水平连铸方法制作出本键合铜丝的坯料;拉伸;退火;分卷;真空包装。
中国专利200610154485.5公开了一种减少氧化的铜丝生产工艺。其步骤是:1)将铜杆通过拉丝工序以后形成细小的铜丝;2)将铜丝做退火软化工艺加工处理;3)将通过高温的真空退火管退火处理之后的铜丝用冷凝水槽中的冷凝水进行冷却,及时的冷却防止铜线与高温下空气中的氧气发生氧化;4)再将冷却后的铜丝进行风干工序后得到最后的铜丝成品。根据该发明生产出来的铜丝抗氧化的能力得到大幅提高,节省了风磅,降减少了用电成本,降低了噪音。
单晶铜丝材料质量的好坏直接影响焊接质量,从而对半导体器件的可靠性和稳定性产生很大影响。
发明内容
本发明的目的在于提供一种所制备的铜丝微观结构更加完美,力学及电学性能更好的单晶铜丝的制备方法。
所述单晶铜丝的制备方法包括以下步骤:
1)大拉:将单晶铜铜杆拉制成Φ0.95mm的铜丝;
2)中拉:将步骤1)所得的铜丝拉制成Φ0.261mm的铜丝;
3)小拉:将步骤2)所得的铜丝拉制成Φ0.099mm的铜丝;
4)细拉:将步骤3)所得的铜丝拉制成Φ0.0311mm的铜丝;
5)微拉:将步骤4)所得的铜丝拉制成Φ0.0160mm的铜丝;
6)退火:在H2和N2的保护下,将步骤5)所得的铜丝进行热处理,再将热处理后的铜丝进行清洗,即得单晶铜丝。
在步骤1)和步骤2)中,所述拉制时所用的拉丝润滑剂的浓度可为5%~8%,拉制时的温度为45~55℃。
在步骤3)中,所述拉制时所用的拉丝润滑剂的浓度可为3%~5%,拉制时的温度可为25~30℃,最好为26℃。
在步骤4)中,所述拉制时所用的拉丝润滑剂的浓度可为3%~5%,拉制时的温度可为25~30℃,最好为26℃。
在步骤5)中,所述拉制时所用的拉丝润滑剂的浓度可为2%~3%,拉制时的温度可为25~30℃,最好为26℃。
在步骤6)中,所述热处理的条件为:温度410~428℃,H2气体流量可为100ml/min,N2气体流量可为400ml/min;所述清洗可先用超声波超声,再用乙醇洗涤。
与正常拉丝工艺(均经过4次拉伸可达到0.015mm)相比,本发明由于经过5次拉伸及退火,因此不仅在0.015mm时铜丝的微观结构更加完美,力学及电学性能更好,而且可以拉出直径小于0.015的铜丝。经检验,制备的单晶铜丝呈现***光泽,表面清洁,在显微镜下观看无玷污无缺陷;力学性能要满足标准YS/T678-2008的要求。
将退火检验合格后的铜丝放置到复绕机上可复绕成500m/卷或其它长度的规格。
具体实施方式
实施例1
1、大拉:将原材料Φ3.0mm的高纯度单晶铜铜杆拉制Φ0.95mm,经过12个道次,拉丝润滑剂浓度为5%,拉丝时温度为45℃;
2、中拉:将Φ0.95mm的铜丝拉制Φ0.261mm,拉拔速度控制在0.8m/s,经过13个道次。拉丝润滑剂浓度为5%,拉丝时温度为45℃;
3、小拉:将Φ0.261mm的铜丝拉制Φ0.099mm,拉拔速度控制在0.9m/s,经过12个道次,拉丝润滑剂浓度为3%,拉丝时温度为26℃;
4、细拉:将Φ0.099mm的铜丝拉制Φ0.0311mm,拉拔速度控制在2m/s,经过20个道次。拉丝润滑剂浓度为3%,拉丝时温度为26℃;
5、微拉:将Φ0.0311mm的铜丝最低可以拉制Φ0.0160mm,拉拔速度控制在1m/s,经过16个道次,拉丝润滑剂浓度为2%,拉丝时温度为26℃;
6、退火:在H2和N2的保护下(保护气体流量为H2100ml/min、N2400ml/min)将步骤5)所得的铜丝在410℃温度下进行热处理,热处理速度为0.9m/s,处理后的铜丝进行超声波清洗,再用无水酒精洗涤,即得单晶铜丝。
经检验,制备的单晶铜丝呈现***光泽,表面清洁,在显微镜下观看无玷污无缺陷;力学性能要满足标准YS/T678-2008的要求。检验合格后的铜丝放置到复绕机上复绕成500m/卷或其它长度的规格,将复绕后铜丝真空包装,即得产品。
上述实施例中,模具的孔径光洁度:0.25mm以上表面粗造度Ra等于0.025;0.25mm以下表面粗造度Ra大于0.025。
实施例2
实施例1类似,其区别在于:
1、大拉时,拉丝润滑剂浓度为8%,拉丝时温度为55℃;
2、中拉时,拉丝润滑剂浓度为8%,拉丝时温度为50℃;
3、小拉时,拉丝润滑剂浓度为5%,拉丝时温度为25℃;
4、细拉时,拉丝润滑剂浓度为4%,拉丝时温度为26℃;
5、微拉时,拉丝润滑剂浓度为2.5%,拉丝时温度为30℃;
6、退火时,热处理温度为420℃,热处理速度为0.94m/s。
实施例3
实施例1类似,其区别在于:
1、大拉时,拉丝润滑剂浓度为6%,拉丝时温度为50℃;
2、中拉时,拉丝润滑剂浓度为6%,拉丝时温度为55℃;
3、小拉时,拉丝润滑剂浓度为4%,拉丝时温度为30℃;
4、细拉时,拉丝润滑剂浓度为5%,拉丝时温度为25℃;
5、微拉时,拉丝润滑剂浓度为3%,拉丝时温度为26℃;
6、退火时,热处理温度为428℃,热处理速度为0.92m/s。
以上步骤中,铜丝清洗采用超声波清洗,清洗介质采用无水乙醇。虽然退火处理一般采用无水乙醇超声清洗,但鉴于无水乙醇在高温下容易燃烧,可改用超纯水超声清洗。
以下给出检验的结果:重点检测铜丝的外观质量和力学性能,外观是***光泽,表面清洁,在显微镜下观看无玷污无缺陷;力学性能满足标准YS/T678-2008的要求。正常拉丝工艺均经过4次拉伸可达到0.015mm,本发明由于经过5次拉伸及退火,因此不仅在0.015mm时铜丝的微观结构更加完美,力学及电学性能更好,而且可以拉出直径小于0.015的铜丝。
将退火检验合格后的铜丝放置到复绕机上复绕成500m/卷或其它长度的规格,复绕速度为2m/s。将复绕后铜丝真空包装,真空度为0.1MPa。
Claims (9)
1.一种单晶铜丝的制备方法,其特征在于包括以下步骤:
1)大拉:将单晶铜铜杆拉制成Φ0.95mm的铜丝;
2)中拉:将步骤1)所得的铜丝拉制成Φ0.261mm的铜丝;
3)小拉:将步骤2)所得的铜丝拉制成Φ0.099mm的铜丝;
4)细拉:将步骤3)所得的铜丝拉制成Φ0.0311mm的铜丝;
5)微拉:将步骤4)所得的铜丝拉制成Φ0.0160mm的铜丝;
6)退火:在H2和N2的保护下,将步骤5)所得的铜丝进行热处理,再将热处理后的铜丝进行清洗,即得单晶铜丝。
2.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤1)中,所述拉制时所用的拉丝润滑剂的浓度为5%~8%,拉制时的温度为45~55℃。
3.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤2)中,所述拉制时所用的拉丝润滑剂的浓度为5%~8%,拉制时的温度为45~55℃。
4.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤3)中,所述拉制时所用的拉丝润滑剂的浓度为3%~5%,拉制时的温度为25~30℃。
5.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤4)中,所述拉制时所用的拉丝润滑剂的浓度为3%~5%,拉制时的温度为25~30℃。
6.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤5)中,所述拉制时所用的拉丝润滑剂的浓度为2%~3%,拉制时的温度为25~30℃。
7.如权利要求4~6所述的一种单晶铜丝的制备方法,其特征在于所述拉制时的温度为26℃。
8.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤6)中,所述热处理的条件为:温度410~428℃,H2气体流量为100ml/min,N2气体流量为400ml/min。
9.如权利要求1所述的一种单晶铜丝的制备方法,其特征在于在步骤6)中,所述清洗是先用超声波超声,再用乙醇洗涤。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101523370A CN102222624A (zh) | 2011-06-03 | 2011-06-03 | 一种单晶铜丝的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101523370A CN102222624A (zh) | 2011-06-03 | 2011-06-03 | 一种单晶铜丝的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102222624A true CN102222624A (zh) | 2011-10-19 |
Family
ID=44779139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011101523370A Pending CN102222624A (zh) | 2011-06-03 | 2011-06-03 | 一种单晶铜丝的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102222624A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103624101A (zh) * | 2013-11-08 | 2014-03-12 | 宁波奥崎仪表成套设备有限公司 | 不锈钢外鞘电缆(或不锈钢丝)的制备方法 |
CN110711788A (zh) * | 2019-09-23 | 2020-01-21 | 信电电线(深圳)有限公司 | 一种铜线拉丝工艺 |
CN112195422A (zh) * | 2020-09-11 | 2021-01-08 | 中铝材料应用研究院有限公司 | 一种类单晶纯铜的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1913046A (zh) * | 2006-08-03 | 2007-02-14 | 仲庆 | 通信电缆屏蔽层专用铜包钢编织细线的制备方法 |
CN1949492A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 一种键合铜丝及其制备方法 |
CN101524721A (zh) * | 2008-03-19 | 2009-09-09 | 兰州理工大学 | 单晶铜键合丝的制备方法 |
-
2011
- 2011-06-03 CN CN2011101523370A patent/CN102222624A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1913046A (zh) * | 2006-08-03 | 2007-02-14 | 仲庆 | 通信电缆屏蔽层专用铜包钢编织细线的制备方法 |
CN1949492A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 一种键合铜丝及其制备方法 |
CN101524721A (zh) * | 2008-03-19 | 2009-09-09 | 兰州理工大学 | 单晶铜键合丝的制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103624101A (zh) * | 2013-11-08 | 2014-03-12 | 宁波奥崎仪表成套设备有限公司 | 不锈钢外鞘电缆(或不锈钢丝)的制备方法 |
CN103624101B (zh) * | 2013-11-08 | 2016-06-29 | 宁波奥崎仪表成套设备有限公司 | 不锈钢外鞘电缆或不锈钢丝的制备方法 |
CN110711788A (zh) * | 2019-09-23 | 2020-01-21 | 信电电线(深圳)有限公司 | 一种铜线拉丝工艺 |
CN112195422A (zh) * | 2020-09-11 | 2021-01-08 | 中铝材料应用研究院有限公司 | 一种类单晶纯铜的制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100421246C (zh) | 键合铜丝及其制备方法 | |
CN102114584B (zh) | 一种集成电路封装用AuSn20合金钎料的制备方法和用途 | |
CN103194637B (zh) | 一种键合合金银丝及制备方法 | |
CN101607360B (zh) | 超微细键合金丝规模化生产方法 | |
CN102776405B (zh) | 一种键合金银合金丝的制备方法 | |
CN104241237B (zh) | 超声波键合用镀覆铜丝结构 | |
CN102222624A (zh) | 一种单晶铜丝的制备方法 | |
CN106935523A (zh) | 一种键合合金丝的制备方法 | |
CN101524721A (zh) | 单晶铜键合丝的制备方法 | |
WO2015163297A1 (ja) | 半導体装置用ボンディングワイヤ | |
CN102324392B (zh) | 一种防氧化的铜基键合丝的制备工艺 | |
TW201028240A (en) | Composite bonding wire manufacturing method and product thereof | |
CN109266874A (zh) | 一种铜合金键合引线及其制备方法 | |
CN107634045A (zh) | 一种金包银复合键合丝及其制备方法 | |
JP2006032934A (ja) | 金属材料及びその製造方法 | |
CN106992164A (zh) | 一种微电子封装用铜合金单晶键合丝及其制备方法 | |
JP5345162B2 (ja) | 半導体実装用ボンディングワイヤ | |
CN108474058A (zh) | 经涂覆的线材 | |
CN108806825B (zh) | 一种氧化杜美丝及其成型加工方法 | |
CN102509724A (zh) | 一种铜基键合丝及制备方法 | |
CN108198762B (zh) | 一种双镀层键合铜丝的制备方法 | |
JP2008174779A (ja) | ワイヤ材料およびその製造方法 | |
RU2005138442A (ru) | Способ изготовления промежуточной заготовки | |
CN103834832B (zh) | 仿金色键合合金丝及其制备方法 | |
CN104752235A (zh) | 一种铜钯银合金高精超细键合引线制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20111019 |
|
C20 | Patent right or utility model deemed to be abandoned or is abandoned |