CN102221429B - High-temperature pressure and temperature compounded sensor and preparation method thereof - Google Patents
High-temperature pressure and temperature compounded sensor and preparation method thereof Download PDFInfo
- Publication number
- CN102221429B CN102221429B CN 201110161243 CN201110161243A CN102221429B CN 102221429 B CN102221429 B CN 102221429B CN 201110161243 CN201110161243 CN 201110161243 CN 201110161243 A CN201110161243 A CN 201110161243A CN 102221429 B CN102221429 B CN 102221429B
- Authority
- CN
- China
- Prior art keywords
- platinum
- lead
- pad
- temperature
- over panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention provides a high-temperature pressure and temperature compounded sensor and a preparation method thereof. The invention improves the structure of the previous patent of the inventor: silicon sapphire force sensor and the preparation method thereof. The manufacturing method comprises the following steps of manufacturing a platinum thermal resistor having same materials with a strain resistance leading-through platinum welding disc and a platinum welding disc of an internal leading-through at one corner of a non-stress area on a same sapphire wafer with a silicon strain resistor; adopting a welding metal foil strip to replace the original elastic metal contact or the internal leading-through in other forms, thus preparing the high-temperature pressure and temperature compounded sensor with strong vibration resistance and large acceleration resistance. The method solves the problem that the high reliability can not be met when the pressure and the temperature are measured at a same point in the prior art. The high-temperature pressure and temperature compounded sensor remains the advantages of the existing silicon sapphire force sensor; furthermore, compared with the similar product, the high-temperature pressure and temperature compounded sensor has the advantages of more reasonable manufacturing technology, quick operation, low relative cost, high production efficiency and the like, and obviously improves the high reliability of the measurement under the severe conditions.
Description
Technical field
The present invention relates to sensor of a kind of gaging pressure and temperature and preparation method thereof, particularly a kind of measured mediums such as liquid or gas that are applicable to are more than the high acceleration 40g, under the environmental baseline of high temperature below 400 ℃, simultaneously the high temperature pressure of same-point measurement and compound sensor and the preparation method of temperature.
Background technology
The scientific worker knows, be used for the pressure of the measured mediums such as liquid or gas and the same-point measurement of temperature, under the special measurement environment such as spaceship, aircraft, bullet train, rocket (guided missile), nuclear reactor, the reliability requirement of measurement is very important and necessary.But existing sensor is not only being made on the precision, and the more important thing is under the mal-conditions such as high acceleration, high temperature, intense radiation, strong vibration, does not satisfy the requirement of measuring reliability far away.A lot of professionals, all one's life is all in the method for seeking perfectly to solve foregoing problems.Fortunately at present in the world, high-purity alundum (Al2O3) (Al
2O
3) the γ monocrystal, namely Mohs value reaches 9.0, and response frequency reaches 5 * 10
18The sapphire monocrystal of Hz has become the quick and heat sensitive sensor of manufacturing power more satisfactory and be close to perfect high resiliency high temperature crystal.It can epitaxial growth go out monocrystalline silicon, and the metals such as very easily same titanium, platinum are affine again, and its thermal expansivity mates with titanium and large absolutely number titanium alloy in-196 ℃～400 ℃ warm areas very much.This has brought convenience for the high standard sealing-in operation of making sensor.But still there are a lot of difficult problems and difficulty aspect structural design and the technique making.The problem that the inventor once was difficult to overcome for the processing technology more complicated of existing silicon saphire force-sensitive sensor etc., utilize modern manufacturing process and new method of thinking, produced with it and to be applicable to pyrometric silicon saphire force-sensitive sensor, seen patent announcement number for details and be the patent of invention of CN1172169C " silicon saphire force-sensitive sensor and preparation method ".This manufacture craft is the sapphire wafer that epitaxial growth is had monocrystalline silicon membrane, with electrostatic sealing-in or use the molecular linkage method, be sealed on the titanium alloy stress cup, take titanium alloy stress cup symcenter as benchmark, laser carves the silicon strain resistor, at the platinum dish of silicon strain resistor metallic elastic contact connecting lead wire, encapsulate the connection outer lead, make this sensor Applicable temperature reach-196 ℃～400 ℃.Though this sensor has solved the problems such as heatproof, " contact " easily weares and teares and lost efficacy under strong vibration and high acceleration.Also can't resolve simultaneously the same-point measurement problem of pressure and temperature.For solving the same-point measurement problem, people attempt pressure transducer and temperature sensor are merged binding, as Pt100 platinum temperature sensor is bundled into pressure transducer.But there is following problem in it: 1, volume is large, takes up room many; 2, structure is not compact, and thermometric separates with pressure tap; 3, thermometric original paper and measuring point have the gap, and thermometric easily lags behind or indeterminacy.Cling temperature sensor if add the medium such as glue, can bring again electric leakage, particularly high temperature electric leakage also exists temperature coefficient not mate, and the possibility of inefficacy is arranged; 4, lead-in wire is difficult to process, generally not antivibration and not Chinese People's Anti-Japanese Military and Political College's acceleration; 5, adaptive temperature is inadequate; 6, the bad solution of Insulation Problems, outer lead is bad fixing, and vibration strength is inadequate etc.Therefore, the existing sensor high reliability request that do not satisfy same-point measurement far away and under mal-condition, measure.
Summary of the invention
The compound sensor and the preparation method that the purpose of this invention is to provide a kind of high temperature pressure and temperature, it has solved the high reliability problem that does not satisfy same-point measurement pressure and temperature that prior art exists, it not only keeps the advantage of existing silicon saphire force-sensitive sensor, and compared with similar products, have manufacturing process more reasonable, swift to operate, relative cost is low, the characteristics that production efficiency is high have significantly improved the high reliability of measuring under mal-condition.
The technical solution adopted in the present invention is: the compound sensor of this high temperature pressure and temperature comprises and utilizes electrostatic sealing-in or molecular linkage sapphire wafer and titanium alloy stress cup together, outer lead and titanium alloy casing, with the centralized positioning of titanium alloy stress cup axis of symmetry, make silicon strain resistor and non-stressed zone in the stressed zone platinum thermistor is set, its technical essential is: the stressed zone on described sapphire wafer is manufactured with silicon strain resistor and platinum pad, a corner, non-stressed zone on same sapphire wafer is provided with the platinum thermistor, the inner chamber that is welded on the titanium fixed claw on the titanium alloy stress cup utilizes the silver-bearing copper layer to be sealed with insulator pin change-over panel with the fabricated from sapphire of P.e.c., on the platinum pad that palladium-silver chaff one end of internal lead is welded on respectively with silicon strain resistor and platinum thermistor are connected, the palladium-silver chaff other end welds together with the insulator pin change-over panel that is fixed with outer lead; P.e.c. on the insulator pin change-over panel is to make like this: at first prefabricated insulator pin change-over panel, again with the lead-in wire on this insulator pin change-over panel, through wires hole and surperficial with the sealing-in of titanium fixed claw, all carrying out tungsten metallization thick-film technique processes, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, at vacuum, 900 ℃ of lower sintering, the desired palladium-silver lead pad of outer lead, through wires hole, lead-in wire form complete P.e.c. in making on the tungsten layer of metallized film of insulator pin change-over panel.
The preparation method of the compound sensor of above-mentioned high temperature pressure and temperature comprises following operation steps:
Internal lead platinum pad window on step 1, the photoetching sapphire wafer
With the sapphire wafer of epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; The internal lead platinum pad locations of silicon strain resistor and the position of making platinum thermistor and internal lead platinum pad at an a corner, non-stressed zone by designing requirement, are made in presumptive area in the location take titanium alloy stress cup internal diameter as the stressed zone, carry out photoetching; Carve silicon strain resistor internal lead platinum pad window, expose silicon face, simultaneously, carve the window of platinum thermistor and internal lead platinum pad, expose the sapphire surface that is fit to do platinum thermistor and internal lead platinum pad;
With the sapphire wafer scribing of the good platinum pad of sputter and platinum thermistor, under 400 ℃ of temperature, at high vacuum environment, add the 2000V.DC electric field, sapphire wafer sapphire face is sealed on the titanium alloy stress cup;
On laser incising resistance machine, with the centralized positioning of titanium alloy stress cup axis of symmetry, determine stressed zone and non-stressed zone, sapphire wafer there is a leveling of internal lead platinum pad face, silicon strain resistor at monocrystalline silicon crystal orientation quarter at first press in the location in the stressed zone, the internal lead platinum pad of silicon strain resistor is linked up, make resistance bridge, trim out the platinum thermistor in non-stressed zone;
The first insulator pin change-over panel of prefabricated fabricated from sapphire, again with the lead-in wire on the insulator pin change-over panel, through wires hole and with the sealing surface of titanium fixed claw, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of insulator pin change-over panel, make palladium-silver lead pad and trace layer, make the P.e.c. of fabricated from sapphire; Will be with the insulator pin change-over panel of P.e.c., under vacuum, 700 ℃, be connected on the titanium fixed claw with the silver-bearing copper layer, outer lead, is welded on the insulator pin change-over panel as palladium-silver chaff one end of internal lead to the insulator pin change-over panel through the threading eyelet welding;
Advantage and good effect that the present invention has are: because the present invention improves on " silicon saphire force-sensitive sensor and preparation method thereof " basis to form, on same sapphire crystal sheet, make the Silicon pressure of measurement high-temperature medium and the compound sensor of platinum temperature, so both kept the advantage of existing silicon saphire force-sensitive sensor, expand again the new function of sensor, solved the high reliability problem that does not satisfy same-point measurement pressure and temperature that prior art exists.Make monocrystalline silicon strain resistor bridge and the platinum thermistor of measuring pressure (power) at same sapphire wafer; The platinum thermistor is fully compatible in the technological process of manufacturing process and existing patent " silicon saphire force-sensitive sensor and preparation technology " manufacturing foil gauge; Replace the elastic metallic contact with chaff, shearing resistance, tension, unstressed are realizing resistant to elevated temperatures while, anti-strong vibration and anti-high acceleration; Outer lead spot welding or be soldered to the lead-in wire change-over panel on, point of fixity has been arranged, tension.Compared with similar products, have manufacturing process more reasonable, swift to operate, cost of manufacture is low relatively, the characteristics that production efficiency is high.Therefore, having significantly improved its high reliability of measuring under mal-condition applies with being beneficial to.
The present invention is as follows from the structure advantage: 1, adopt the Laser Welding (LBW) chaff to connect the platinum pad on the insulator pin change-over panel, outer lead connects in realizing.Benefit is, but the chaff bonding area is large, easily forms alloy, can anti-alloy more than 400 ℃ such as palladium-silver chaff and the easy formation of platinode, and shearing strength is high.This structure is because of alloy chafves such as palladium-silvers, and proportion is little, and vibration strength is high, determined it than golden aluminium, aluminium aluminium etc. at high nearly 1 order of magnitude of Chinese People's Anti-Japanese Military and Political College's acceleration, vibration strength.Golden aluminium of while, aluminium and constructed of aluminium non-refractory (generally about 150 ℃).
2, on the same sapphire wafer, same plane, almost same point (because titanium alloy stress cup diameter is 3～10mm) pressure measurement and thermometric, has realized with some work.
3, volume is little, and quality is light, is convenient to the special applications such as Aero-Space.
4, temperature tolerance is good, and temperature resistant range depends on integral material.Integral material satisfies-200 ℃ to 400 ℃ warm areas to be used.
5, owing to adopting titanium fixed claw supports insulative lead-in wire change-over panel structure, the integral material temperature coefficient match has again isolation and suspension framework on the structure, and therefore, the error that temperature and vibration cause is very little.
6, outer lead passes the fairlead of insulator pin change-over panel, spots weld on the palladium-silver pad of insulator pin change-over panel, and is relatively firm, antivibration not only, Chinese People's Anti-Japanese Military and Political College's acceleration, again tension.
7, because of outer lead with the shielding construction that links to each other with titanium alloy casing, with the external insulation skin, titanium alloy casing is with the film fenestra of gauge pressure molecular sieve permeable watertight, sensor is fit to round-the-clock, has again certain anti-electromagnetic interference (EMI) performance.
On the quick strain resistor of silicon power and platinum thermistor are at the bottom of the same titanium alloy stress cup.Still isolate in gapped and space between cup and the shell and with other structural member, when measuring, pressure and the temperature variation of measurement point are little, and silicon strain resistor and platinum thermistor are in same isothermal temperature field, are subjected to ectocine little, have accomplished with some pressure measurement and thermometric.
Such sensor, force value it goes without doing zero point and full scale temperature compensation, non-linear correction that it goes without doing.The thermometric effect has reached the A grade standard of International Electrotechnical Commission (IEC) standard.Such compound sensor meets the specific (special) requirements such as space flight and aviation, nuclear reactor, naval vessel, guidance Tres Haute Vitesse. Ammunition, high ferro, oil well logging fully.Because the present invention uses chemicals hardly, so environmental protection.Because manufacture craft is compact quick, therefore cost compare is low, production efficiency is high.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is a kind of structural representation of compound sensor of the present invention.
Fig. 2 is a kind of structural representation of titanium fixed claw among Fig. 1;
Fig. 3 is that Fig. 2 is along the cut-open view of A-A line;
Fig. 4 is a kind of structural representation of insulator pin change-over panel among Fig. 1;
Fig. 5 is that Fig. 4 is along the cut-open view of B-B line;
Fig. 6 is the assembly structure schematic diagram of insulator pin change-over panel, chaff, titanium fixed claw and outer lead among Fig. 1;
Fig. 7 is silicon strain resistor, the platinum resistance plane distribution schematic diagram among Fig. 1.
Sequence number explanation among the figure: 1 titanium alloy stress cup, 2 sapphire wafers, 3 silicon strain resistors, 4 platinum pads, 5 chaffs, 6 P.e.c., 7 outer leads, 8 insulator pin change-over panels, 9 titanium fixed claws, 10 silver-bearing copper layers, 11 titanium alloy casings, 12 metallic shield nets, 13 external insulation skins, 14 insulation filler, 15 platinum thermistors.
Embodiment
Describe concrete structure of the present invention and preparation method in detail according to Fig. 1～7.The compound sensor of this high temperature pressure and temperature comprises and utilizes electrostatic sealing-in or molecular linkage sapphire wafer 2 together and the parts such as titanium alloy stress cup 1, platinum pad 4, insulator pin change-over panel 8, titanium fixed claw 9, outer lead 7 and titanium alloy casing 11.Wherein with location, the axis of symmetry center (stress cup internal diameter) of titanium alloy stress cup 1, an a corner, non-stressed zone that is manufactured with in the stressed zone on the same sapphire wafer 2 of silicon strain resistor 3 and platinum pad 4 is provided with platinum thermistor 15.Be welded on the inner chamber of the titanium fixed claw 9 on the titanium alloy stress cup 1, utilize silver-bearing copper layer 10 to be sealed with insulator pin change-over panel 8.On the platinum pad 4 that chaff 5 one ends of internal lead are welded on respectively with silicon strain resistor 3 and platinum thermistor 15 are connected, chaff 5 other ends weld together with the insulator pin change-over panel 8 that is fixed with outer lead 7.For guaranteeing reliable connection, adopt existing tungsten metallization thick-film technique, all be manufactured with the tungsten metalized film at the lead-in wire of insulator pin change-over panel 8, palladium-silver lead pad, through wires hole and with titanium fixed claw 9 sealing surfaces etc., make P.e.c. 6 at this insulator pin change-over panel 8.The optional polyimide that the periphery of outer lead 7 is coated with 13(200 ℃ of the inner metallic shield net 12 of loading insulation filler 14 and external insulation skin selects glass fibre to fill the monox sleeve pipe below 400 ℃).Measure detecting sensor lead-in wire platinum pad 4(electrical measurement); With low-grade fever argon arc welding welding titanium alloy shell 11(top with an air permeable waterproof and saturating other organic macromolecule film fenestra).The calibrating mark is finished product.
P.e.c. 6 on the above-mentioned insulator pin change-over panel 8 is to make like this: at first prefabricated insulator pin change-over panel 8, again with the lead-in wire on this insulator pin change-over panel 8, through wires hole and surperficial with the sealing-in of titanium fixed claw 9, all carrying out tungsten metallization thick-film technique processes, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, at vacuum, 900 ℃ of lower sintering, the desired palladium-silver lead pad of outer lead, through wires hole, lead-in wire form complete P.e.c. 6 in making on the tungsten layer of metallized film of insulator pin change-over panel 8.
The preparation method of the compound sensor of aforementioned high temperature pressure and temperature comprises following operation steps:
Internal lead platinum pad 4 windows on step 1, the photoetching sapphire wafer 2.
With the sapphire wafer 2 of sapphire epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; By designing requirement, internal lead platinum pad 4 positions of making silicon strain resistor 3 in presumptive area, simultaneously at a corner, non-stressed zone of this same sapphire wafer 2, the reticle chart board is namely made in the position of making platinum thermistor 15 and internal lead platinum pad 4, carries out photoetching; Carve internal lead platinum pad 4 windows of silicon strain resistor 3, namely remove corresponding SiO
2Film exposes silicon face, simultaneously, carves the window of platinum thermistor 15 and internal lead platinum pad 4, namely removes corresponding SiO
2With silicon film, expose the sapphire surface that is fit to do platinum thermistor 15 and internal lead platinum pad 4.
Because what substance platinum does not have corrode fast it, can not make intact figure with traditional planar technology photoetching process.Therefore, adopt mask method, i.e. the figure that sputter is determined, not photoetching is with laser correction (ablation) or reasonable way.The internal lead pad 4 of silicon strain resistor 3, platinum thermistor 15 and internal lead platinum pad 4 adopt condition of equivalent thickness to get final product, and have once spattered into just, do not increase operation and cost in the sputter link.It is enough at 1～2 μ m for general thickness.
With sapphire wafer 2 scribings of the good platinum pad 4 of sputter with platinum thermistor 15.Under 400 ℃ of temperature, in vacuum (1 * 10
-5㎜ Hg) environment adds the 2000V.DC electric field, and sapphire wafer 2 sapphire faces are sealed on the titanium alloy stress cup 1.Surface smoothness and flatness reach 0 grade or I level aperture, 5 minutes time.Sealed, under vacuum, be warmed to 670 ℃ in passing, 30 minutes time, carried out platinum silicon, platinum blue jewel alloying, and eliminate stress.
On laser incising resistance machine, with the centralized positioning of stress cup axis of symmetry, determine stressed zone and non-stressed zone.Sapphire wafer there is the leveling of internal lead pad face, the location.At first press the monocrystalline silicon crystal orientation in the stressed zone, carve silicon strain resistor 3, the lead-in wire platinum pad 4 of silicon strain resistor 3 is linked up, measure in real time, make resistance bridge; After complete, also measure in real time, trim out platinum thermistor 15 in non-stressed zone.
First prefabricated insulator pin change-over panel 8 namely adopts the sapphire crystal with sapphire wafer 2 homogeneities, goes out corresponding structure and surperficial insulator pin change-over panel 8 with gem processor cold working; With the lead-in wire on this insulator pin change-over panel 8, through wires hole and with the sealing surface of titanium fixed claw 9 etc., adopt existing tungsten metallization thick-film technique again, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of the through wires hole of insulator pin change-over panel 8, make palladium-silver lead pad and trace layer, make P.e.c. 6.This insulator pin change-over panel 8 with P.e.c. 6, under vacuum, 700 ℃, be welded on the titanium fixed claw 9 with silver-bearing copper layer 10.The periphery of outer lead 7 is surrounded by the bell housing that the inner metallic shield net 12 of loading insulation filler 14 consists of, and the optional polyimide sleeve pipe of 13(200 ℃ of external insulation skin is set at bell housing, selects glass fibre to fill the monox sleeve pipe below 400 ℃).Outer lead 7 spots weld through through wires hole on the palladium-silver lead pad of P.e.c. 6 of insulator pin change-over panel 8.Then chaff 5 one ends as internal lead are welded on the palladium-silver pad on the insulator pin change-over panel 8.The titanium fixed claw 9 that utilizes silver-bearing copper layer 10 to be sealed with insulator pin change-over panel 8 inner chamber passes through the low-grade fever argon arc welding, is welded on the titanium alloy stress cup 1.During welding titanium fixed claw 9, necessarily internal lead chaff 5 is aimed at corresponding platinum pad 4.
Soldered joint on the waveguide flexible pipe that laser bonding is used is aimed at the other end (being pressed on the platinum pad 4) as internal lead chaff 5, and miniwatt repeatedly spots weld on the platinum pad 4.Microscopically chaff solder joint surface by the white obvious metal bright white (platinum, palladium, silver alloy look) that occurs of porcelain for well.This moment, stretching resistance was more than 50 grams.Burn-on at last with the waterproof thoroughly titanium alloy casing 11 of other organic macromolecule film fenestra that reaches not of an air permeable, namely form a complete compound sensor.
Claims (2)
1. the compound sensor of a high temperature pressure and temperature, comprise and utilize electrostatic sealing-in or molecular linkage sapphire wafer and titanium alloy stress cup together, outer lead and titanium alloy casing, with the centralized positioning of titanium alloy stress cup axis of symmetry, make silicon strain resistor and non-stressed zone in the stressed zone platinum thermistor is set, it is characterized in that: the stressed zone on described sapphire wafer is manufactured with silicon strain resistor and platinum pad, a corner, non-stressed zone on same sapphire wafer is provided with the platinum thermistor, the inner chamber that is welded on the titanium fixed claw on the titanium alloy stress cup utilizes the silver-bearing copper layer to be sealed with insulator pin change-over panel with the fabricated from sapphire of P.e.c., on the platinum pad that palladium-silver chaff one end of internal lead is welded on respectively with silicon strain resistor and platinum thermistor are connected, the palladium-silver chaff other end welds together with the insulator pin change-over panel that is fixed with outer lead; P.e.c. on the insulator pin change-over panel is to make like this: at first prefabricated insulator pin change-over panel, again with the lead-in wire on this insulator pin change-over panel, through wires hole and surperficial with the sealing-in of titanium fixed claw, all carrying out tungsten metallization thick-film technique processes, on the tungsten layer of metallized film, print palladium-silver lead-in wire slurry, at vacuum, 900 ℃ of lower sintering, the desired palladium-silver lead pad of outer lead, through wires hole, lead-in wire form complete P.e.c. in making on the tungsten layer of metallized film of insulator pin change-over panel.
2. the preparation method of the compound sensor of a high temperature pressure claimed in claim 1 and temperature is characterized in that comprising following operation steps:
Internal lead platinum pad window on step 1, the photoetching sapphire wafer
With the sapphire wafer of epitaxial monocrystalline silicon, use the high temperature wet silicon oxide surface, form fine and close SiO
2Layer; The internal lead platinum pad locations of silicon strain resistor and the position of making platinum thermistor and internal lead platinum pad at an a corner, non-stressed zone by designing requirement, are made in presumptive area in the location take titanium alloy stress cup internal diameter as the stressed zone, carry out photoetching; Carve silicon strain resistor internal lead platinum pad window, expose silicon face, simultaneously, carve the window of platinum thermistor and internal lead platinum pad, expose the sapphire surface that is fit to do platinum thermistor and internal lead platinum pad;
Step 2, mask sputter platinum are made silicon strain resistor internal lead platinum pad and the platinum layer of platinum thermistor and the platinum pad of internal lead thereof;
Step 3, encapsulation sapphire wafer are to titanium alloy stress cup
With the sapphire wafer scribing of the good platinum pad of sputter and platinum thermistor, under 400 ℃ of temperature, at high vacuum environment, add the 2000V.DC electric field, sapphire wafer sapphire face is sealed on the titanium alloy stress cup;
Step 4, with the centralized positioning of titanium alloy stress cup axis of symmetry, hinder with laser incising
On laser incising resistance machine, with the centralized positioning of titanium alloy stress cup axis of symmetry, determine stressed zone and non-stressed zone, sapphire wafer there is a leveling of internal lead platinum pad face, silicon strain resistor at monocrystalline silicon crystal orientation quarter at first press in the location in the stressed zone, the internal lead platinum pad of silicon strain resistor is linked up, make resistance bridge, trim out the platinum thermistor in non-stressed zone;
Step 5, location dress insulator pin change-over panel are to titanium alloy stress cup base
The first insulator pin change-over panel of prefabricated fabricated from sapphire, again with the lead-in wire on the insulator pin change-over panel, through wires hole and with the sealing surface of titanium fixed claw, all make the tungsten metalized film; Under vacuum, 900 ℃ of high temperature, on the tungsten layer of metallized film of insulator pin change-over panel, make palladium-silver lead pad and trace layer, make the P.e.c. of fabricated from sapphire; Will be with the insulator pin change-over panel of P.e.c., under vacuum, 700 ℃, be connected on the titanium fixed claw with the silver-bearing copper layer, outer lead, is welded on the insulator pin change-over panel as palladium-silver chaff one end of internal lead to the insulator pin change-over panel through the threading eyelet welding;
Step 6, be soldered on the platinum pad as the other end of internal lead palladium-silver chaff, the titanium alloy casing of burn-oning, the test calibrating namely becomes the compound sensor of high temperature pressure and temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110161243 CN102221429B (en) | 2011-06-16 | 2011-06-16 | High-temperature pressure and temperature compounded sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110161243 CN102221429B (en) | 2011-06-16 | 2011-06-16 | High-temperature pressure and temperature compounded sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102221429A CN102221429A (en) | 2011-10-19 |
| CN102221429B true CN102221429B (en) | 2013-01-02 |
Family
ID=44778043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110161243 Active CN102221429B (en) | 2011-06-16 | 2011-06-16 | High-temperature pressure and temperature compounded sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102221429B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103376182B (en) * | 2012-04-28 | 2016-08-03 | 浙江三花股份有限公司 | A kind of heat-exchange apparatus and pressure transducer thereof |
| CN102759426A (en) * | 2012-07-25 | 2012-10-31 | 北京中科博为科技有限公司 | Super-high-temperature-resistant remote-transmitting high-precision pressure sensing device |
| CN104215382B (en) * | 2014-09-05 | 2016-04-06 | 沈阳市传感技术研究所 | The film isolated form gauge pressure transducer of external balance chamber |
| JP6456314B2 (en) * | 2016-01-29 | 2019-01-23 | 株式会社鷺宮製作所 | Refrigerant circuit components |
| DE102018106518A1 (en) | 2018-03-20 | 2019-09-26 | Tdk Electronics Ag | Sensor element for pressure and temperature measurement |
| CN110054141A (en) * | 2019-03-27 | 2019-07-26 | 西人马联合测控（泉州）科技有限公司 | Pressure sensor and its packaging method |
| CN110006546B (en) * | 2019-04-12 | 2020-11-20 | 苏州市信睦知识产权服务有限公司 | Novel intelligent thermometer special for detecting hydraulic elevator |
| RU197682U1 (en) * | 2019-12-27 | 2020-05-21 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) | SEMICONDUCTOR PRESSURE SENSOR |
| CN113358237A (en) * | 2021-05-14 | 2021-09-07 | 北京电子工程总体研究所 | Sensor, measurement and control system and aircraft |
| CN114136527A (en) * | 2021-11-29 | 2022-03-04 | 浙江吉利控股集团有限公司 | Sensing element and vehicle |
| CN115824317B (en) * | 2023-02-16 | 2023-05-09 | 四川新川航空仪器有限责任公司 | Multifunctional sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1399124A (en) * | 2002-08-29 | 2003-02-26 | 段祥照 | Silicon saphire force-sensitive sensor and its making process |
| CN101526404A (en) * | 2009-01-19 | 2009-09-09 | 中国电子科技集团公司第四十八研究所 | Temperature and pressure compound sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6612175B1 (en) * | 2000-07-20 | 2003-09-02 | Nt International, Inc. | Sensor usable in ultra pure and highly corrosive environments |
| JP2005338048A (en) * | 2004-04-28 | 2005-12-08 | Nippon Seiki Co Ltd | Semiconductor sensor device |
-
2011
- 2011-06-16 CN CN 201110161243 patent/CN102221429B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1399124A (en) * | 2002-08-29 | 2003-02-26 | 段祥照 | Silicon saphire force-sensitive sensor and its making process |
| CN101526404A (en) * | 2009-01-19 | 2009-09-09 | 中国电子科技集团公司第四十八研究所 | Temperature and pressure compound sensor |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2005-338048A 2005.12.08 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102221429A (en) | 2011-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102221429B (en) | High-temperature pressure and temperature compounded sensor and preparation method thereof | |
| CN103487176B (en) | Structure and method for packaging pressure sensor | |
| CN105910751B (en) | Parallel-plate dry-type capacitance pressure sensor | |
| CN103221330B (en) | The sensor of ceramic substrate and manufacture method thereof including preferably multilamellar | |
| KR20160065864A (en) | Method for producing a metal-ceramic soldered connection | |
| KR20110093888A (en) | Sensor element and process for assembling a sensor element | |
| CN103615967A (en) | High-temperature foil strain gauge and method for manufacturing high-temperature foil strain gauge | |
| KR20110003499A (en) | Hermetic sealing cap | |
| CN107128871B (en) | A kind of physical package part and its packaging method based on MEMS Atom Chip | |
| CN109632123A (en) | A kind of flexible paste chip temperature sensor | |
| US4309687A (en) | Resistance strain gauge | |
| JP3652647B2 (en) | High temperature detector and manufacturing method thereof | |
| US11994440B2 (en) | High temperature protected wire bonded sensors | |
| CN106052545A (en) | Quick wiring device for strain gauge on steel surface and strain measurement method | |
| CN203519214U (en) | Packaging structure of pressure sensor | |
| CN109502539A (en) | Microelectronic device and its manufacturing process with shielded connector | |
| CN203014757U (en) | Cold pressure welding ceramic sealed housing and crystal oscillator employing same | |
| JPH03268302A (en) | Resistance element | |
| CN1172169C (en) | Silicon saphire force-sensitive sensor and its making process | |
| CN209841755U (en) | Ceramic substrate-based micro-hotplate gas-sensitive array device | |
| KR102368837B1 (en) | Wiring board | |
| CN110571307B (en) | Photoelectric detection product bonding wire coating process | |
| JP3810148B2 (en) | Wiring board | |
| CN115321465A (en) | Film sensor with lead wire package and sensing system | |
| CN116929610A (en) | High-temperature micro-melting pressure sensor core and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |