CN1172169C - Silicon saphire force-sensitive sensor and its making process - Google Patents
Silicon saphire force-sensitive sensor and its making process Download PDFInfo
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- CN1172169C CN1172169C CNB021328269A CN02132826A CN1172169C CN 1172169 C CN1172169 C CN 1172169C CN B021328269 A CNB021328269 A CN B021328269A CN 02132826 A CN02132826 A CN 02132826A CN 1172169 C CN1172169 C CN 1172169C
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Abstract
The present invention relates to a silicon sapphire force-sensitive sensor and a preparation method thereof. The silicon sapphire force-sensitive sensor comprises a titanium alloy stress cup, a silicon sapphire foil gauge, a welding pad and a lead seat component, wherein the silicon sapphire foil gauge, the welding pad and the lead seat component are assembled on the titanium alloy stress cup. The silicon sapphire force-sensitive sensor has the technical key point that the foil gauge and the stress cup are connected and sealed into a whole, and subsequently, an outer lead electrode is connected with the welding pad by the lead seat component fixed on an insulator after the foil gauge measures the carved obstruct in a real-time way. The silicon sapphire force-sensitive sensor has the following operational steps that the extension of the silicon sapphire is adulterated, annealed and oxidized; a welding pad window is carved, and the mask is sputtered by the platinum to be sliced; the sealing connection and the alloying operation are carried out simultaneously; then, the obstruct is carved by the laser, and the assembling operation is carried out; finally, the testing inspection is carried out so that the silicon sapphire force-sensitive sensor is formed. The present invention not only has reliable structure and easy assembly, but also has the capacity of keeping the advantages of the existing silicon sapphire force-sensitive sensor. Simultaneously, the present invention can fully play the performances, and moreover, the present invention has the advantages of simple manufacture technology, labor saving, material saving, high production efficiency and obviously low manufacture cost. Furthermore, the present invention can enhance the quality and the measurement precision of the product, and the present invention can effectively eliminate the environmental pollution and the harm for the operators.
Description
Technical field
The present invention relates to a kind of sensor of making the dynamic or static pressure of measuring liquid and gas and preparation method thereof, particularly a kind of pyrometric silicon saphire force-sensitive sensor and preparation method thereof that is applicable to.
Background technology
As everyone knows, high-purity monocrystal sapphire-alundum (Al monocrystal, its crystallization situation and monocrystalline silicon are similar.Therefore, on sapphire substrate, can utilize epitaxy technology to grow monocrystalline silicon.And quality can reach makes the integrated circuit requirement.Utilize the extension thin slice of sapphire-silicon, can make electron device-foil gauge of measuring stress.Utilize this foil gauge, can make senior force-sensing sensor.
This force-sensing sensor has following characteristics: in range ability, do not have and leaks, and safe; It is little to lag behind, and creep is little; Output signal is big, maximum 400mV.DC/mA.DC; Exceed nearly 2 orders of magnitude than traditional foil gauge; Between the sensistor, the insulation resistance height does not almost have electric leakage; Use wide temperature region, antipollution; Anti-nuclear radiation; Resistance to shock is good; The range broadness, as: from 0～10KPa to 0～700MPa, (or 0～0.01N to 0～10
8N) can both realize; Long-time stability are good, and the life-span is long.Just because of this, just determined that also it is one of at present best in the world sensor.From the sixties, just cause the attention of Aeronautics and Astronautics, military aspect widely.The USSR (Union of Soviet Socialist Republics) and the U.S. have made the silicon on sapphire pressure transducer that is used on rocket and the aircraft in succession.Except that being used for military going up, on industry (instrument) transmitter, also adopt the silicon on sapphire sensor, the processing technology more complicated of existing silicon on sapphire sensor, its traditional preparation method are to adopt to carve earlier the technology of afterwards pasting.Its preparation method mainly comprises:
Utilize the thick sapphire sheet of 200 μ m to carry out: polishing; The thick monocrystalline silicon of extension 2 μ m; In silicon, mix impurity, form P type silicon; Anneal again; Silicon oxide surface forms SiO
2Layer; Scribe strain resistor and more than 40 compensating resistance modulation resistor network, (though resistive surface has SiO
2Layer protection, but resistance tomography place silicon exposes); Scribe the pad window and (remove the SiO at pad place
2Layer exposes silicon layer); Vacuum aluminum-coated; Alloying Treatment (being silicon-aluminium alloyization); Carve aluminum pad; Test; Remove aluminum pad (to increase temperature during sealing-in, aluminium will with the violent chemical combination of silicon); Foil gauge is made in scribing; The strict foil gauge that cleans; Under vacuum, weld.Utilize the silver-bearing copper weld tabs that the silicon on sapphire foil gauge is welded on the stress cup; To the device that sealing-in has been welded, carry out mask and be coated with aluminum pad; Silicon-aluminium alloyization (both made under vacuum air-breathing, easily cause aluminaization) because of titanium; Test; Fixed insulation and the outer solder joint of lead-in wire (generally stick with glue receive the stress cup get on); The pressure welding internal lead; Test; Carrying out zero point adjusts; Carry out operation such as zero temperature compensation, measurement repeatedly.In whole manufacturing process,, make force-sensing sensor through 40 multiple working procedures.In application, also must carry out nonlinear compensation and carry out sensitivity temperature drift compensation (these non-linear and temperature drifts mainly because sealing-in cause) sensor.The processing technology complexity of this sensor, material is taken a lot of work, taken to long flow path, and wherein any procedure is made mistakes, and sensor all can be scrapped.Particularly following operation also exists the problem that is difficult to overcome:
One, with silicon-on-sapphire foil gauge etching good after, be sealed to again on the titanium alloy stress cup.Its existence:
1, the monocrystalline silicon strain resistor departs from easily in the sealing-in process, be difficult to the stress cup on cup internal strain district (internal diameter) symmetrical, the sealing-in skew can make the non-linear increase of sensor, yield rate is low;
2,,, the output characteristics of sensor is distorted so foil gauge and stress cup envelope can produce stress of sealing for after the one owing to uneven between stress cup front cover and foil gauge sealing surface;
3, during the scolder sealing-in,, also produce stress because flow of solder material causes layer inhomogeneous;
4, in the sealing-in process because the local venting of stress cup and anchor clamps thereof, making the selective oxidation of silicon resistance bar tomography, irregular all resistance changes, and will cause sensor zero point to change, the full scale nonlinearities change is when temperature influence, it is big that temperature drift becomes.
Two, first evaporation layer of aluminum film in processing foil gauge process must be removed before encapsulation.Because the encapsulation foil gauge is to the stress cup the time, sealing temperature is more than 700 to spend.Serious combination reaction will take place in aluminium and silicon.After aluminium was removed, easy remaining chemical drug and residual thing on the silicon window easily formed the separation layer that is unfavorable for Ohmic contact under sealing-in high temperature.
Three, after aluminum pad (rete) and the pressure welding of internal lead spun gold, easily form purple plague purpura, fragile, can only work below 150 ℃.Behind the pressure welding silicon silk, also can only be to use below 200 ℃.
Four, because be pressure welding internal lead on film,, the usability and the serviceable life of sensor will be influenced so resistance to shock is poor.
Five, in the sensor process, use poisonous and harmful substance in a large number, must strictly protect, increase manufacturing cost, in case reveal, not only environment is polluted, and infringement operator's health.
Therefore, the manufacture craft of existing sensor is anxious waits to improve.
Summary of the invention
The purpose of this invention is to provide a kind of silicon saphire force-sensitive sensor and preparation method thereof, it is reliable in structure not only, assembling keeps the advantage of existing silicon saphire force-sensitive sensor easily, and fully excavating out it should have performance, and manufacturing process is simple, saving of labor, material-saving, the production efficiency height significantly reduces manufacturing cost, improve the quality and the measuring accuracy of product, effectively eliminate to the pollution of environment with to operator's injury.
The object of the present invention is achieved like this: this silicon saphire force-sensitive sensor comprises titanium alloy stress cup and assembles silicon on sapphire foil gauge on it, pad and wire holder assembly, its technical essential is by electrostatic sealing-in or molecular linkage, silicon on sapphire thin slice and titanium alloy stress cup are welded into one, with stress cup internal diameter is the location, stressed zone, foil gauge measured in real time carve after resistance forms strain resistor, the wire holder assembly is fixed on the insulator, the outer lead electrode is fixed on the lead-in wire tube upper end of wire holder assembly or is fixed on the lead pad of wire holder assembly, by the goldplated contact of band spring in the lead-in wire tube or by the spun gold on the lead pad, Si-Al wire and pad join.
The insulator of said fixing wire holder assembly be assembled in titanium alloy stress cup sealing-in all-in-one-piece titanium alloy support set on, the lead-in wire tube of wire holder assembly upper end is the outer lead electrode fixedly, is fastened on the goldplated contact of the band spring on the pad in the lead-in wire tin.
The insulator of said fixing wire holder assembly directly is integral with the sealing-in of titanium alloy stress cup, and lead pad one end is the outer lead electrode fixedly, and the other end passes through spun gold or Si-Al wire connection pads.
This silicon saphire force-sensitive sensor technological process comprises following operation steps:
The silicon on sapphire extension thin slice that integrated circuit is used carries out ion doping; The silicon on sapphire sheet is annealed and silicon surface oxidation, forms fine and close SiO
2Layer; Scribe strain resistor pad or tactile disk silicon window by predetermined direction; Mask sputter platinum; Scribing; Adopt electrostatic sealing-in or molecular linkage to be sealed on the stress cup silicon on sapphire foil gauge, constitute one; With stress cup internal diameter is the stressed zone, and the location is measured in real time and carved resistance formation strain resistor; With prior prefabricated wire holder assembly, to press in the mark encapsulation on the stress cup, test verification is promptly made silicon saphire force-sensitive sensor.
Carve and afterwards paste technology because the present invention cancels the elder generation of existing silicon saphire force-sensitive sensor, be about to silicon-on-sapphire foil gauge etching good after, be sealed to again on the titanium alloy stress cup, paste the back carving technology earlier, promptly earlier utilize mask method to plate the platinum tactile disk silicon on sapphire foil gauge but adopt; Under vacuum, adopt electrostatic sealing-in or molecular linkage to be sealed on the stress cup silicon on sapphire foil gauge, constitute one; Under the high temperature of degree more than 700, the platinum tactile disk carries out alloying with silicon, forms the electrode of firm stable; Stressed zone with titanium alloy stress cup is a scaling point again, on laser resistance at quarter machine, measure in real time and carve resistance, four bridge resistances of resistance bridge are processed by designing requirement, each resistance and shape are very approaching, and bridge circuit output approaches zero, and distribution of resistance is accurate, so need not carry out the resistance adjustment again, need not compensate zero point, need not non-linearly revise, compensate without sensitivity temperature drift.The resistance section forms compact oxidation layer, and long-time stability are good.This silicon saphire force-sensitive sensor adaptability is strong, can do industrial instrument and meter for automation usefulness, can be used for various engines again, as boat send out with rocket, nuclear reactor, motor car engine on may be used to pressure measurement; This method not only manufacturing process is simple, reliable in structure, and assembling is easily used toxic and harmful substance hardly, and saving of labor, material-saving, makes the production efficiency height.Therefore, significantly reduce manufacturing cost, cost has only 1/10～1/20 of existing product, obviously improves the quality and the measuring accuracy of product, effectively eliminates to the pollution of environment with to operator's injury, has fundamentally overcome prior art and has had the problem that is difficult to overcome.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is the silicon on sapphire pressure sensor structure synoptic diagram that existing manufacture craft is produced.
Fig. 2 is the silicon on sapphire pressure sensor structure synoptic diagram that manufacture craft of the present invention is produced.
Embodiment
Describe concrete structure of the present invention and preparation method thereof in detail according to Fig. 1-2.Comprise titanium alloy stress cup 1 and assemble silicon on sapphire foil gauge 2, pad and wire holder assembly on it, adopt electrostatic sealing-in or molecular linkage to be welded into one in silicon on sapphire foil gauge 2 and titanium alloy stress cup 1, envelope is done internal lead pad 4, with stress cup 1 internal diameter is the location, stressed zone, after resistance formation strain resistor 3 was carved in measurement in real time to foil gauge 2, outer lead electrode 7 joined by wire holder assembly and the pad 4 that is fixed on the insulator 8.Can make two kinds of versions according to this wire holder assembly of actual request for utilization, one as shown in Figure 1, be the insulator 8 of anchor leg tube 6 be assembled in titanium alloy stress cup 1 sealing-in all-in-one-piece titanium alloy support set 9 on, lead-in wire tube 6 upper ends are outer lead electrode 7 fixedly, is fastened on the goldplated contact 5 of the band spring on the pad 4 in the lead-in wire tins 6.Its two as shown in Figure 2, the insulator 13 of anchor leg pad 10 directly is integral with 1 sealing-in of titanium alloy stress cup, lead pad 10 1 ends are outer lead electrode 11 fixedly, the other end passes through spun gold or Si-Al wire 12 connection pads 4.
This silicon saphire force-sensitive sensor technological process comprises following operation steps: integrated circuit with silicon on sapphire extension thin slice, is adopted ions diffusion or ion to inject and carries out ion doping; The silicon on sapphire sheet is annealed and silicon surface oxidation, forms fine and close SiO
2Layer; Scribe the strain resistor pad or tactile disk silicon window (is removed SiO on window by predetermined direction
2Layer); Mask sputter platinum (, vacuum aluminum-coated again after the sealing-in) as adopting aluminum pad; Scribing; By static or other molecular linkage the silicon on sapphire thin slice is sealed on the stress cup.If the platinum pad, just adopt under 700 ℃ the vacuum and carry out electrostatic sealing-in or silver-bearing copper welding, also just carried out the microbedding alloying on the contact layer of platinum and silicon simultaneously, form well firm combination and Ohmic contact.If the employing aluminum pad, behind the intact silicon on sapphire foil gauge of sealing-in, it is vacuum aluminum-coated also will to carry out mask, carry out silicon-aluminium alloyization simultaneously; With stress cup internal diameter is the stressed zone, and the location is measured the resistance at quarter in real time at etching laser machining (the resistance machine is carved in laser trimming) and formed strain resistor.Four bridge resistances of resistance bridge are processed by designing requirement; Assembling then: test verification, promptly make silicon saphire force-sensitive sensor.
According to shown in Figure 1, with the in advance prefabricated goldplated contact that has spring 5, the lead-in wire tube 6 that has stationary pipes, outer lead electrode 7, the insulator 8 of anchor leg tube 6, the assemblies such as titanium alloy support set 9 of fixed insulation body 8, press in the mark encapsulation on the stress cup 1, just made force-sensing sensor.
According to shown in Figure 2, earlier with prefabricated components such as insulator 13, lead pad 10, outer lead electrodes 11, be fixed on the stress cup 1, with press welder spun gold or Si-Al wire 12 are bonded on pad 4 and the lead pad 10, form force-sensing sensor.Wherein pad 4 is aluminum pad (or platinum+titanium+platinum+gold.But platinum+titanium+platinum+gold solder dish is made hell to pay, and cost is too high, generally need not).Outer lead electrode 11 can be made of flexible circuit conductor, and lead pad 10 directly is fixed on the insulator 13, and insulator 13 directly is fixed on the stress cup 1.
On pad 4, plate titanium, platinum, gold again, be used to weld the spun gold internal lead, can work in the high-temperature region below 400 ℃.With the goldplated contact 5 direct and platinum plating pad 4 realization Ohmic contact of band spring, high temperature resistant, good anti-vibration can be worked under strong vibration below 400 ℃.
Claims (4)
1, a kind of silicon saphire force-sensitive sensor, comprise titanium alloy stress cup and assemble silicon on sapphire foil gauge on it, pad and wire holder assembly, it is characterized in that by electrostatic sealing-in or molecular linkage, silicon on sapphire foil gauge and titanium alloy stress cup are welded into one, with stress cup internal diameter is the location, stressed zone, foil gauge measured in real time carve after resistance forms strain resistor, the wire holder assembly is fixed on the insulator, the outer lead electrode is fixed on the lead-in wire tube upper end of wire holder assembly or is fixed on the lead pad of wire holder assembly, by the goldplated contact of band spring in the lead-in wire tube or by the spun gold on the lead pad, Si-Al wire and pad join.
2, sensor according to claim 1, it is characterized in that: the insulator of anchor leg holder assembly be assembled in titanium alloy stress cup sealing-in all-in-one-piece titanium alloy support set on, the lead-in wire tube upper end of wire holder assembly is the outer lead electrode fixedly, is fastened on the goldplated contact of the band spring on the pad in the lead-in wire tube.
3, sensor according to claim 1 is characterized in that: the insulator of anchor leg holder assembly directly is integral with the sealing-in of titanium alloy stress cup, and lead pad one end is the outer lead electrode fixedly, and the other end passes through spun gold or Si-Al wire connection pads.
4, the preparation method of the described silicon saphire force-sensitive sensor of a kind of claim 1 is characterized in that comprising following operation steps:
The silicon on sapphire extension thin slice that integrated circuit is used carries out ion doping; The silicon on sapphire sheet is annealed and silicon surface oxidation, forms fine and close SiO
2Layer; Scribe strain resistor pad or tactile disk silicon window by predetermined direction; Mask sputter platinum; Scribing; Adopt electrostatic sealing-in or molecular linkage to be sealed on the stress cup silicon on sapphire foil gauge, constitute one; With stress cup internal diameter is the stressed zone, and the location is measured in real time and carved resistance formation strain resistor; With prior prefabricated wire holder assembly, to press in the mark encapsulation on the stress cup, test verification is promptly made silicon saphire force-sensitive sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB021328269A CN1172169C (en) | 2002-08-29 | 2002-08-29 | Silicon saphire force-sensitive sensor and its making process |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB021328269A CN1172169C (en) | 2002-08-29 | 2002-08-29 | Silicon saphire force-sensitive sensor and its making process |
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| CN1172169C true CN1172169C (en) | 2004-10-20 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT511330B1 (en) * | 2011-06-03 | 2012-11-15 | Piezocryst Advanced Sensorics | SENSOR FOR MEASUREMENT OF PRESSURE AND / OR FORCE |
| CN102221429B (en) * | 2011-06-16 | 2013-01-02 | 沈阳市传感技术研究所 | High-temperature pressure and temperature compounded sensor and preparation method thereof |
| CN102759426A (en) * | 2012-07-25 | 2012-10-31 | 北京中科博为科技有限公司 | Super-high-temperature-resistant remote-transmitting high-precision pressure sensing device |
| CN105067184A (en) * | 2015-08-08 | 2015-11-18 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| CN104990651A (en) * | 2015-08-16 | 2015-10-21 | 昆山泰莱宏成传感技术有限公司 | Silicon-sapphire differential capacitance type pressure sensor and manufacturing method |
| CN105527152B (en) * | 2015-11-30 | 2017-12-19 | 浙江工商大学 | A kind of plastic pallet mechanical strength detection alignment system and method |
| CN105510147B (en) * | 2015-11-30 | 2017-12-05 | 浙江工商大学 | A kind of plastic pallet mechanical strength detection means based on stress section |
| CN106644195B (en) * | 2016-09-30 | 2020-07-24 | 北京航空航天大学 | High-temperature wide-range silicon-sapphire pressure sensor structure |
| CN107505081A (en) * | 2017-08-21 | 2017-12-22 | 北京精密机电控制设备研究所 | A kind of small-sized silicon on sapphire differential pressure pickup |
| CN114136527A (en) * | 2021-11-29 | 2022-03-04 | 浙江吉利控股集团有限公司 | Sensing element and vehicle |
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