CN102181919A - 一种控制直拉硅单晶头部电阻率的方法 - Google Patents
一种控制直拉硅单晶头部电阻率的方法 Download PDFInfo
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- CN102181919A CN102181919A CN 201110092541 CN201110092541A CN102181919A CN 102181919 A CN102181919 A CN 102181919A CN 201110092541 CN201110092541 CN 201110092541 CN 201110092541 A CN201110092541 A CN 201110092541A CN 102181919 A CN102181919 A CN 102181919A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 114
- 239000010703 silicon Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 113
- 238000012360 testing method Methods 0.000 claims abstract description 56
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 46
- 239000000956 alloy Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims description 49
- 238000005259 measurement Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 22
- 239000000523 sample Substances 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 10
- 238000010899 nucleation Methods 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 12
- 239000007788 liquid Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
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- 241001269238 Data Species 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
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- 238000012423 maintenance Methods 0.000 description 2
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105755533A (zh) * | 2016-05-20 | 2016-07-13 | 麦斯克电子材料有限公司 | 一种直拉法制备高电阻硅单晶的方法 |
CN106294302A (zh) * | 2016-08-10 | 2017-01-04 | 宁夏高创特能源科技有限公司 | 一种硅靶材配料调节极性、电阻率测算方法 |
CN106757313A (zh) * | 2016-12-29 | 2017-05-31 | 上海合晶硅材料有限公司 | 超重掺砷晶棒拉制方法 |
US20200002836A1 (en) * | 2018-06-27 | 2020-01-02 | Global Wafers Co., Ltd. | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
WO2020005904A1 (en) * | 2018-06-27 | 2020-01-02 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
US20200002835A1 (en) * | 2018-06-27 | 2020-01-02 | Global Wafers Co., Ltd. | Methods for determining the resistivity of a polycrystalline silicon melt |
US20200208294A1 (en) * | 2018-12-27 | 2020-07-02 | Globalwafers Co., Ltd | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
US20210071315A1 (en) * | 2016-12-28 | 2021-03-11 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
CN112680787A (zh) * | 2021-03-17 | 2021-04-20 | 杭州晶宝新能源科技有限公司 | 一种单晶硅的生长方法及单晶硅 |
CN115558999A (zh) * | 2022-10-09 | 2023-01-03 | 包头美科硅能源有限公司 | 一种提高大尺寸n型单晶电阻率命中度的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020131458A1 (en) * | 2018-12-21 | 2020-06-25 | Globalwafers Co., Ltd. | Sample rod center slab resistivity measurement during single crystal silicon ingot production |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101654804A (zh) * | 2009-09-24 | 2010-02-24 | 浙江大学 | 一种在晶体生长过程中控制掺镓直拉硅电阻率的方法 |
CN101906659A (zh) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | 光伏用单晶硅的掺杂方法 |
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2011
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101654804A (zh) * | 2009-09-24 | 2010-02-24 | 浙江大学 | 一种在晶体生长过程中控制掺镓直拉硅电阻率的方法 |
CN101906659A (zh) * | 2010-08-18 | 2010-12-08 | 高佳太阳能股份有限公司 | 光伏用单晶硅的掺杂方法 |
Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105755533A (zh) * | 2016-05-20 | 2016-07-13 | 麦斯克电子材料有限公司 | 一种直拉法制备高电阻硅单晶的方法 |
CN106294302A (zh) * | 2016-08-10 | 2017-01-04 | 宁夏高创特能源科技有限公司 | 一种硅靶材配料调节极性、电阻率测算方法 |
CN106294302B (zh) * | 2016-08-10 | 2018-10-09 | 宁夏高创特能源科技有限公司 | 一种硅靶材配料调节极性、电阻率测算方法 |
US20210071315A1 (en) * | 2016-12-28 | 2021-03-11 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
US12024789B2 (en) * | 2016-12-28 | 2024-07-02 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
CN106757313A (zh) * | 2016-12-29 | 2017-05-31 | 上海合晶硅材料有限公司 | 超重掺砷晶棒拉制方法 |
US10954606B2 (en) | 2018-06-27 | 2021-03-23 | Globalwafers Co., Ltd. | Methods for modeling the impurity concentration of a single crystal silicon ingot |
US11047066B2 (en) | 2018-06-27 | 2021-06-29 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
US20200002836A1 (en) * | 2018-06-27 | 2020-01-02 | Global Wafers Co., Ltd. | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
US10781532B2 (en) | 2018-06-27 | 2020-09-22 | Globalwafers Co., Ltd. | Methods for determining the resistivity of a polycrystalline silicon melt |
US10793969B2 (en) | 2018-06-27 | 2020-10-06 | Globalwafers Co., Ltd. | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
CN112469850A (zh) * | 2018-06-27 | 2021-03-09 | 环球晶圆股份有限公司 | 单晶硅锭生产期间的样品棒生长及电阻率测量 |
CN112469851A (zh) * | 2018-06-27 | 2021-03-09 | 环球晶圆股份有限公司 | 在单晶硅锭生产期间确定杂质积累的多个样品棒生长 |
WO2020005904A1 (en) * | 2018-06-27 | 2020-01-02 | Globalwafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
WO2020005901A1 (en) * | 2018-06-27 | 2020-01-02 | Globalwafers Co., Ltd. | Sample rod growth and resistivity measurement during single crystal silicon ingot production |
EP4361324A3 (en) * | 2018-06-27 | 2024-05-29 | GlobalWafers Co., Ltd. | Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots |
JP7467362B2 (ja) | 2018-06-27 | 2024-04-15 | グローバルウェーハズ カンパニー リミテッド | 単結晶シリコンインゴット製造中のサンプルロッド成長および抵抗率測定 |
US20200002835A1 (en) * | 2018-06-27 | 2020-01-02 | Global Wafers Co., Ltd. | Methods for determining the resistivity of a polycrystalline silicon melt |
JP2021528355A (ja) * | 2018-06-27 | 2021-10-21 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 単結晶シリコンインゴットの製造中の不純物の蓄積を決定するための複数のサンプルロッドの成長 |
JP2021529147A (ja) * | 2018-06-27 | 2021-10-28 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 単結晶シリコンインゴット製造中のサンプルロッド成長および抵抗率測定 |
TWI800474B (zh) * | 2018-06-27 | 2023-04-21 | 環球晶圓股份有限公司 | 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法 |
TWI791859B (zh) * | 2018-06-27 | 2023-02-11 | 環球晶圓股份有限公司 | 單晶矽錠生產過程之樣品棒生長和電阻率測量之方法 |
TWI794522B (zh) * | 2018-06-27 | 2023-03-01 | 環球晶圓股份有限公司 | 單晶矽錠生產過程之以複數樣品棒生長確認雜質積累之方法 |
JP7237996B2 (ja) | 2018-06-27 | 2023-03-13 | グローバルウェーハズ カンパニー リミテッド | 単結晶シリコンインゴットの製造中の不純物の蓄積を決定するための複数のサンプルロッドの成長 |
US11739437B2 (en) * | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
US20200208294A1 (en) * | 2018-12-27 | 2020-07-02 | Globalwafers Co., Ltd | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
CN112680787B (zh) * | 2021-03-17 | 2021-06-04 | 杭州晶宝新能源科技有限公司 | 一种单晶硅的生长方法及单晶硅 |
CN112680787A (zh) * | 2021-03-17 | 2021-04-20 | 杭州晶宝新能源科技有限公司 | 一种单晶硅的生长方法及单晶硅 |
CN115558999A (zh) * | 2022-10-09 | 2023-01-03 | 包头美科硅能源有限公司 | 一种提高大尺寸n型单晶电阻率命中度的方法 |
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Application publication date: 20110914 Assignee: Inner Mongolia Zhonghuan Photovoltaic Material Co., Ltd. Assignor: Huanou Semiconductor Material Technology Co., Ltd., Tianjin Contract record no.: 2014120000008 Denomination of invention: Method for controlling resistivity of head of Czochralski silicon Granted publication date: 20121226 License type: Exclusive License Record date: 20140210 |
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Effective date of registration: 20190523 Address after: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee before: Tianjin Zhonghuan Semiconductor Co., Ltd. |
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Effective date of registration: 20220419 Address after: 010000 No. 15 Baolier Street, Saihan District, Hohhot City, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |
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