CN102176430A - 消除栅极侧壁再沉积的方法和半导体器件 - Google Patents
消除栅极侧壁再沉积的方法和半导体器件 Download PDFInfo
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- CN102176430A CN102176430A CN2011100765762A CN201110076576A CN102176430A CN 102176430 A CN102176430 A CN 102176430A CN 2011100765762 A CN2011100765762 A CN 2011100765762A CN 201110076576 A CN201110076576 A CN 201110076576A CN 102176430 A CN102176430 A CN 102176430A
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CN2011100765762A CN102176430A (zh) | 2011-03-29 | 2011-03-29 | 消除栅极侧壁再沉积的方法和半导体器件 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693906A (zh) * | 2012-06-11 | 2012-09-26 | 上海宏力半导体制造有限公司 | 削弱侧壁再沉积的方法、刻蚀方法及半导体器件制造方法 |
CN111627859A (zh) * | 2019-02-28 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6057240A (en) * | 1998-04-06 | 2000-05-02 | Chartered Semiconductor Manufacturing, Ltd. | Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers |
US20030219683A1 (en) * | 2002-05-23 | 2003-11-27 | Institute Of Microelectronics. | Low temperature resist trimming process |
US6686292B1 (en) * | 1998-12-28 | 2004-02-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer |
CN1609711A (zh) * | 2003-10-21 | 2005-04-27 | 应用材料有限公司 | 控制蚀刻工序的精确度和再现性的方法 |
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2011
- 2011-03-29 CN CN2011100765762A patent/CN102176430A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6057240A (en) * | 1998-04-06 | 2000-05-02 | Chartered Semiconductor Manufacturing, Ltd. | Aqueous surfactant solution method for stripping metal plasma etch deposited oxidized metal impregnated polymer residue layers from patterned metal layers |
US6686292B1 (en) * | 1998-12-28 | 2004-02-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer |
US20030219683A1 (en) * | 2002-05-23 | 2003-11-27 | Institute Of Microelectronics. | Low temperature resist trimming process |
CN1609711A (zh) * | 2003-10-21 | 2005-04-27 | 应用材料有限公司 | 控制蚀刻工序的精确度和再现性的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102693906A (zh) * | 2012-06-11 | 2012-09-26 | 上海宏力半导体制造有限公司 | 削弱侧壁再沉积的方法、刻蚀方法及半导体器件制造方法 |
CN102693906B (zh) * | 2012-06-11 | 2017-03-01 | 上海华虹宏力半导体制造有限公司 | 削弱侧壁再沉积的方法、刻蚀方法及半导体器件制造方法 |
CN111627859A (zh) * | 2019-02-28 | 2020-09-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140603 |
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Effective date of registration: 20140603 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20110907 |