CN102172857B - Method for grinding indium antimonide wafer - Google Patents
Method for grinding indium antimonide wafer Download PDFInfo
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- CN102172857B CN102172857B CN201010608803.7A CN201010608803A CN102172857B CN 102172857 B CN102172857 B CN 102172857B CN 201010608803 A CN201010608803 A CN 201010608803A CN 102172857 B CN102172857 B CN 102172857B
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Abstract
The invention discloses a method for grinding an indium antimonide wafer. The method comprises the following steps of: performing image pre-acquisition and identification on the indium antimonide wafer to be processed to acquire central position data of the indium antimonide wafer; setting grinding parameters according to the central position data of the indium antimonide wafer; making the indium antimonide wafer move longitudinally and rotate during longitudinal movement, and grinding the indium antimonide wafer by using a grinding wheel to finish circle cutting operation; and finishing chamfering operation on the upper surface and the lower surface of the indium antimonide wafer by using the grinding wheel. By the method, the positions of the center and the reference surface of the wafer are accurately positioned, and circle cutting treatment and chamfering treatment are performed during grinding after wafer identification to achieve the multi-step and accurate grinding effects. Edge breakage in the chamfering process is effectively reduced, repeatability of process conditions is ensured, the consistency of wafer appearance is improved, and the yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of method for grinding of indium antimonide wafer.
Background technology
One of remarkable advantage of Infrared Focal Plane Detection Technology can obtain Area Objects information more exactly, in the military affairs such as target homing, missile warning detection, information scouting and relevant civil area, has broad application prospects.For the face battle array that meets indium antimonide focal plane array device develops to large-scale, must 3 inches of indium antimonide wafer materials of development.
3 inches of indium antimonide wafer profile Standardization Process are one of critical processes of indium antimonide wafer processing technology.Due to the particularity of indium antimonide material itself, make the wafer of the crystal processing of being grown by <111> direction, electrical parameter uniformity is poor, cannot meet the needs of focal plane device, and must pass through <211> direction grown crystal, then by <111> direction sliced crystal, obtain the wafer of <111>.Due to the anisotropic properties of crystalline material, in <211> direction during growing single-crystal crystal ingot, all directions growth rate difference, thus growth interface is not sub-circular, but " D " shape or trapezoidal.The difference of growth interface, finally causes the crystal ingot profile of two different directions growths also different.The crystal ingot equal-diameter part approximate circle cylinder of <111> direction growth, the similar dam of crystal ingot equal-diameter part of <211> direction growth.This crystal ingot of growing by <211> direction, while cutting in <111> direction, need to rotate to an angle.Because direction of rotation is perpendicular to large face (the namely trapezoidal base of growth interface), therefore can increases to a certain extent trapezoidal height, thereby dwindle base aspect ratio.Increase on this height still has sizable gap dimensionally with large base, usually highly only has the half of base size.This irregular property, for the Standardization Process of wafer, is a huge challenge.
Conventional semi-conducting material technical process be crystal growth, round as a ball, do main reference plane, cutting, chamfering.But due to the particularity of indium antimonide material itself, on the one hand, crystal ingot outward appearance is very irregular, cannot realize by round as a ball technique; And on the other hand, even if realized round as a ball technique, due to the cutting of needs gyration, the wafer cutting out is also oval, so just make round as a ball technique lose meaning.Therefore conventional semi-conducting material technique cannot be applied to 3 inches of indium antimonide material technologies.
Current indium antimonide material technology is after crystal growth, directly the crystal ingot of irregular profile is cut.Current chamfer angle technique, can only process for the less wafer of area, for the indium antimonide wafer in 1.5 inches, generally adopts original craft to make reference face, and carries out the technique of chamfering.3 inches of indium antimonide wafers are the same with former small size wafer, and all for same detector, because detector is not because use 3 inches of wafers to increase thickness, therefore detector requires consistent to the final thickness of two kinds of wafers.For the consideration of cost, original cut crystal thickness can not the proportional increase along with the increase of area, and the increase of area Thickness Ratio makes the wafer of 3 inches more easily cracked.Manual rounding chamfer angle technique in the early time, larger to people's technical ability dependence, cannot form large-scale production, people's labour intensity is large.And because indium antimonide material hardness is little, easily, along the feature of cleavage surface cleavage, in the process of processing, be easy to cracked.The development of 3 inches of indium antimonide materials, further aggravates the situation of this difficulty.
Summary of the invention
The invention provides a kind of method for grinding of indium antimonide wafer, poor in order to solve in the standardization moulding technique existing in prior art wafer uniformity, cannot mass production, inefficiency, problem that yield rate is low.
For reaching above-mentioned purpose, the invention provides a kind of method for grinding of indium antimonide wafer, said method comprising the steps of:
Indium antimonide wafer to be processed is carried out to image and gather in advance identification, obtain the center data of described indium antimonide wafer;
According to the center data of described indium antimonide wafer, grinding parameter is set; Make described indium antimonide wafer lengthwise movement, and indium antimonide wafer rotation described in lengthwise movement process, utilize emery wheel to carry out grinding to described indium antimonide wafer, complete cyclotomy operation;
Utilize emery wheel to complete the chamfering operation to described indium antimonide wafer upper surface and lower surface.
Wherein, indium antimonide wafer to be processed is carried out to image to be gathered after identification in advance, according to the difference of the main reference plane radius of recognition image and actual processing main reference plane radius, determine the offset of described indium antimonide wafer center, then select the sheet of accompanying with described indium antimonide wafer solid colour, described in adjusting, accompany sheet to be placed on the position of described indium antimonide wafer, obtain the center data of described indium antimonide wafer.
Wherein, to described indium antimonide wafer carry out grinding before, by regulating the transverse movement distance of mechanical handing wafer arm, adjust the center of described indium antimonide wafer.
Wherein, to described indium antimonide wafer carry out grinding before, by regulating the lengthwise movement distance of sucker, adjust the center of described indium antimonide wafer.
Wherein, to described indium antimonide wafer carry out grinding time, the removal amount in feeding process each time should be less than or equal to 2mm.
Wherein, when carrying out cyclotomy operation and chamfering operation, with emery wheel and indium antimonide wafer described in cooling fluid shower.
Wherein, described cooling solution is deionized water.
Wherein, the flow of described cooling solution is 3L/min.
Beneficial effect of the present invention is as follows:
The accurate positions wafer of the present invention center, reference plane position, coordinate the abrasion wheel grinding technique after wafer identification, carries out cyclotomy and chamfered, reaches multi-step, accurate effect of grinding.Effectively reduce the limit problem that collapses in chamfer process, guaranteed the repeatability of process conditions, improved the uniformity of wafer profile, improved yield rate.
Accompanying drawing explanation
Fig. 1 is the flow chart of the method for grinding of a kind of indium antimonide wafer of the embodiment of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, does not limit the present invention.
In order to solve the cyclotomy of 3 inches of indium antimonide wafers, chamfer angle technique problem, the invention provides a kind of identification of wafer pattern and supporting cyclotomy based on wafer images recognition technology, chamfer machining indium antimonide wafer technique, not only solved existing manual processing technology precision, uniformity is poor, the problem that labour intensity is large, also efficiently solve indium antimonide wafer in batches, large-scale production problem, and point multiple steps after wafer identification have been provided and have carried out the subsequent treatment process of planar section cyclotomy and groove part chamfering, can effectively solve the easy cleavage of wafer, breakable problem.Be different from traditional handicraft, the data that the present invention can provide according to identifying processing at image intelligent identification downstream equipment are accurately worked, and these two techniques are merged into 3 inches of piths in indium antimonide wafer material technology.
As shown in Figure 1, the embodiment of the present invention relates to a kind of method for grinding of indium antimonide wafer, comprises the following steps:
Step S101, by sample (indium antimonide wafer to be processed, hereinafter to be referred as wafer) be placed on workbench, carry out image and gather in advance identification, according to the difference of the main reference plane radius of recognition image and actual processing main reference plane radius, determine the offset of center wafer position, then select the suitable sheet of accompanying with wafer solid colour, adjusting accompanies sheet to be placed on the position of wafer, obtains suitable center wafer position data.
Wherein, sample to be processed can utilize cutting machine to rotate to an angle to cut from <211> direction crystal ingot to obtain.The wafer cutting down from crystal ingot, two sides has different physicochemical properties, in order to tell wafer any face in follow-up technique, be the one side towards seed crystal, in semiconductor technology, defined processing has certain angle on circular wafer two straight flanges as the major and minor plane of reference.In InSb wafer technique, wafer is defined as to In face towards the one side of seed crystal; In faces up.The turn clockwise position of 120 ° of main reference plane is defined as the secondary plane of reference.For 3 inches of indium antimonide wafers, secondary plane of reference length can be defined as 12mm, and main reference plane is generally the twice of secondary plane of reference length.Because InSb wafer is similar to trapezoidal special shape, main reference plane is less, the trapezoidal height needing is larger, the diameter of crystal ingot also needs larger, from the consideration of integrated cost, in order to process 3 inches of indium antimonide wafers of standard on the crystal ingot of small diameter, we are by main reference plane length definition 24,36, tri-kinds of length of 40mm, in the embodiment of the present invention, main reference plane length adopts the 40mm that has more representative and practical significance.
VSE (Video Shape Engineer, IMAQ recognition system) wafer gathers the plurality of advantages such as recognition technology has Real-time Collection, accurately identification, positioning precision is high, process stabilizing is controlled.VSE technology adopts fixed position CCD (Charge-coupled Device, charge coupled cell), irregular wafer is carried out to the identification of IMAQ and intelligent appearance and size, and backlight and acrylic plate have formed IMAQ wafer work platform for placing.In order to provide one to be not easy to make staff's fatigue, and don't affect the light source of accuracy of identification, backlight adopts independent adjustable red LED (Light Emitting Diode, light emitting diode).Fixed position CCD and workbench distance are certain, and its identification size, by standard sample, by adjusting the focal length of CCD, is calibrated in advance.
On workbench, have a virtual coordinate system, take directly over as 0 degree, angle increases in the counterclockwise direction.On the upper cover plate of workbench, be provided with the working hole of putting into wafer, after being placed on wafer on workbench and can being gathered by CCD by working hole, identification wafer profile, and 3 inches of most suitable reference plane positions of indium antimonide wafer can processing of intelligence computation and the center of wafer.The plane of reference is owing to being the limit processing on circular wafer, therefore, the direction wafer length minimum vertical with main reference plane, so recognition system also can be by trapezoidal wafer, the height of length minimum therewith the shortest direction is corresponding, and trapezoidal large base is identified as to main reference plane position.The center wafer of system-computed, take standardized semiconductor technology as basis, in standardization semiconductor technology, wafer profile standardization is to realize in the round as a ball technique before wafer cutting, it in this technique, is only edging chamfering, therefore, the cylindrical center of circular wafer is the center wafer of recognition of devices.For trapezoidal InSb wafer, be only equipment for trapezoidal wafer rounding, and be unlikely and waste very much the center that sub-circular wafer is processed in reference that material provides.The reference processing dimension that equipment provides is to utilize to greatest extent wafer as prerequisite, because 3 inches of irregular trapezoidal wafer height only have the half on long base, under the prerequisite that makes full use of wafer, the center of wafer can be offset to long egative film, and long base is also corresponding to main reference plane.The wafer processing like this takes full advantage of raw wafers, but because center relies on long limit, thereby can cause the oversize of main reference plane, and this is to being very disadvantageous in follow-up wafer grinding, glossing.In order to obtain expecting the standard size wafer of plane of reference size, non-flanged defect, we are the sheet of accompanying with wafer solid colour by placement in the opposite direction on long limit, center is pulled down to the distance of expecting with main reference plane.Adding the object of accompanying sheet, is in order to allow middle mind-set a direction of recognition of devices move, to have reached the object of controlled working wafer position.Because accompany the part that sector-meeting is wafer by recognition of devices, equipment, in order to reduce the waste for wafer, can accompany sheet direction to move the middle mind-set of identification like this.For example: three inches of wafer radius R=76.2/2=38.1mm, main reference plane length 40mm, according to Pythagorean theorem, can calculate the length of center wafer to main reference plane, be OF radius=32.429mm, if the OF radius that recognition of devices goes out is less than this numerical value, do not change center wafer, plane of reference length can be larger, the excessive plane of reference can make the circularity variation of wafer, is unfavorable for so follow-up wafer process technique.Below wafer, add and accompany after sheet, OF radius has become 32.492mm by 30.516mm.
Step S102, according to the center data of wafer, arranges grinding parameter, and the parameter of movement of wafers is set, and the parameter such as emery wheel running; Wafer lengthwise movement, and rotation in motion, the emery wheel of High Rotation Speed grinds away the redundance of wafer, completes cyclotomy process.
After IMAQ identification technique, carry out emery wheel High Rotation Speed cyclotomy chamfer angle technique, according to the step of setting, remove wafer redundance.Be placed on the wafer on workbench by hand, on its center and workbench, the round dot of virtual coordinate system all has certain difference in X, Y-axis.Virtual coordinate system on workbench, direction is vertically upward defined as 0 °, and the large base of wafer and 0 ° of angle are the angle that sucker need to rotate.The not requirement of angle that equipment is placed for wafer, that is to say that angle can be 0～360 °.X, Y, θ direction are positioned at a plane, and X refers to mechanical arm transverse movement, and Y refers to sucker lengthwise movement, and θ refers in sucker lengthwise movement process self 360 ° of rotation.Deviation in X-axis, is compensated by the transverse movement distance of adjusting mechanical handling wafers arm; Deviation in Y-axis, will be compensated by (the being lengthwise movement) distance that seesaws of adjusting sucker.Being identified system validation is the large base of wafer of main reference plane, its direction also has certain angle with 0 degree position of virtual coordinate system, in the process of moving to sucker at mechanical arm absorption wafer, sucker is by corresponding rotation angle to compensate this deviation, and making to process the plane of reference can be in full accord with the large base of wafer direction.After deviation compensation in X, Y, θ direction, wafer, under sucker absorption, does the motion in Y, θ direction.
In the process of grinding, by the distance of adjusting sucker central authorities and emery wheel edge, realize the removal amount in program setting, by test of many times, in order to guarantee crudy, the removal amount in feeding process each time should be less than or equal to 2mm.
In cyclotomy chamfer process, because being relies on the high-speed grinding of emery wheel to realize, therefore needing provides cooling fluid by coolant pump.Cooling fluid is given emery wheel and the wafer cooling of High Rotation Speed on the one hand, needs again on the other hand the particle that grinding is got off to take away rapidly, in order to avoid particle brings scratch to fillet surface.This just needs cooling fluid also will have certain pressure, through series of experiments, finally determines that best cooling solution is deionized water; Best cooling solution flow is 3L/min.
Step S103, after cyclotomy process completes, emery wheel does Z-direction motion, makes the upper surface of the groove part top edge aligning wafer of emery wheel, completes the chamfer process of upper surface.By similar operations, complete the chamfer process of lower surface.Wafer returns to sucker initial position under sucker absorption, completes cyclotomy chamfer process.
Wafer completes after cyclotomy chamfer process, to processed wafer selective examination, measures wafer diameter, upper and lower chamfering width, if deviation goes beyond the scope, inputs respective value in equipment, to adjust equipment parameters, revises deviation.
Indium antimonide material cyclotomy wire rate under these process conditions reaches 10mm/sec, and when single step removal amount reaches 6mm, fillet surface pattern is still comparatively desirable.Wafer profile parameter testing result after cyclotomy chamfering shows, 3 inches of indium antimonide wafer moulding schemes that this wafer collection analysis combines with cyclotomy chamfering, can accurately locate well and accurate machining, thereby can reduce well broken wafers and improve to greatest extent wafer uniformity.
As can be seen from the above-described embodiment, the present invention is by adopting the collection of VSE wafer, recognition system, and accurately positions wafer center, reference plane position, coordinates the abrasion wheel grinding technique after wafer identification, carry out cyclotomy and chamfered, reach multi-step, accurate effect of grinding.The wafer diameter of gained and plane of reference size Control are better, major-minor plane of reference angle can with guarantee, effectively reduced the limit problem that collapses in chamfer process, guarantee in this process, the accurate wafer carry of each step, ensure to the full extent the repeatability of different batches, improve the uniformity of wafer profile; Number of tiles in accurate processed wafer as requested and reduction wafer Standardization Process, improves yield rate well; Solve in the standardization moulding technique of 3 inches of indium antimonide wafer materials wafer uniformity poor, cannot mass production, inefficiency, yield rate low etc. series of technical, the development to 3 inches of indium antimonide wafer materials and yield rate improve larger contribution.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (7)
1. a method for grinding for indium antimonide wafer, is characterized in that, said method comprising the steps of:
Indium antimonide wafer to be processed is carried out to image to be gathered after identification in advance, according to the difference of the main reference plane radius of recognition image and actual processing main reference plane radius, determine the offset of described indium antimonide wafer center, then select the sheet of accompanying with described indium antimonide wafer solid colour, described in adjusting, accompany sheet to be placed on the position of described indium antimonide wafer, obtain the center data of described indium antimonide wafer;
According to the center data of described indium antimonide wafer, grinding parameter is set; Make described indium antimonide wafer lengthwise movement, and indium antimonide wafer rotation described in lengthwise movement process, utilize emery wheel to carry out grinding to described indium antimonide wafer, complete cyclotomy operation;
Utilize emery wheel to complete the chamfering operation to described indium antimonide wafer upper surface and lower surface.
2. the method for grinding of indium antimonide wafer as claimed in claim 1, is characterized in that, to described indium antimonide wafer carry out grinding before, by regulating the transverse movement distance of mechanical handing wafer arm, adjust the center of described indium antimonide wafer.
3. the method for grinding of indium antimonide wafer as claimed in claim 1, is characterized in that, to described indium antimonide wafer carry out grinding before, by regulating the lengthwise movement distance of sucker, adjust the center of described indium antimonide wafer.
4. the method for grinding of indium antimonide wafer as claimed in claim 1, is characterized in that, to described indium antimonide wafer carry out grinding time, the removal amount in feeding process each time should be less than or equal to 2mm.
5. the method for grinding of indium antimonide wafer as claimed in claim 1, is characterized in that, when carrying out cyclotomy operation and chamfering operation, with emery wheel and indium antimonide wafer described in cooling fluid shower.
6. the method for grinding of indium antimonide wafer as claimed in claim 5, is characterized in that, described cooling fluid is deionized water.
7. the method for grinding of indium antimonide wafer as claimed in claim 5, is characterized in that, the flow of described cooling fluid is 3L/min.
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| CN103831685A (en) * | 2014-03-11 | 2014-06-04 | 佛山市南海鑫隆机工机械有限公司 | Automatic edge grinding method of special-shaped ceramic cups and plates and edge grinding auxiliary device |
| CN103985784A (en) * | 2014-04-18 | 2014-08-13 | 中国电子科技集团公司第十一研究所 | Polishing and chamfering method for semiconductor chip |
| CN104526493A (en) * | 2014-11-18 | 2015-04-22 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer edge polishing technology |
| CN105575856B (en) * | 2015-12-23 | 2018-11-20 | 中国电子科技集团公司第十一研究所 | A kind of couple of InSb carries out the device of cyclotomy chamfering |
| CN107598763A (en) * | 2017-10-24 | 2018-01-19 | 江门市奥伦德光电有限公司 | The grinding wafer equipment and its Ginding process of a kind of more size compatibilities |
| CN115502884B (en) * | 2022-11-24 | 2023-03-07 | 苏州优晶光电科技有限公司 | Silicon carbide ingot outer diameter grinding control system and method |
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| JP4002324B2 (en) * | 1997-07-08 | 2007-10-31 | 株式会社ニデック | Lens grinding device |
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| EP0953405A2 (en) * | 1998-04-30 | 1999-11-03 | Nidek Co., Ltd. | Optical lens grinding apparatus |
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