CN102172857A - Method for grinding indium antimonide wafer - Google Patents
Method for grinding indium antimonide wafer Download PDFInfo
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- CN102172857A CN102172857A CN2010106088037A CN201010608803A CN102172857A CN 102172857 A CN102172857 A CN 102172857A CN 2010106088037 A CN2010106088037 A CN 2010106088037A CN 201010608803 A CN201010608803 A CN 201010608803A CN 102172857 A CN102172857 A CN 102172857A
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Abstract
The invention discloses a method for grinding an indium antimonide wafer. The method comprises the following steps of: performing image pre-acquisition and identification on the indium antimonide wafer to be processed to acquire central position data of the indium antimonide wafer; setting grinding parameters according to the central position data of the indium antimonide wafer; making the indium antimonide wafer move longitudinally and rotate during longitudinal movement, and grinding the indium antimonide wafer by using a grinding wheel to finish circle cutting operation; and finishing chamfering operation on the upper surface and the lower surface of the indium antimonide wafer by using the grinding wheel. By the method, the positions of the center and the reference surface of the wafer are accurately positioned, and circle cutting treatment and chamfering treatment are performed during grinding after wafer identification to achieve the multi-step and accurate grinding effects. Edge breakage in the chamfering process is effectively reduced, repeatability of process conditions is ensured, the consistency of wafer appearance is improved, and the yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of method for grinding of indium antimonide wafer.
Background technology
One of remarkable advantage of infrared focus plane Detection Techniques can obtain appearance mark information more exactly, with relevant civil area wide application prospect is arranged in military affairs such as target homing, missile warning detection, information scoutings.For the face battle array that satisfies the indium antimonide focal plane array device to extensiveization development, must 3 inches indium antimonide wafer materials of development.
3 inches indium antimonide wafer profile standardization technologies are one of critical processes of indium antimonide wafer processing technology.Because the particularity of indium antimonide material itself, make by＜111 the wafer of the crystal processing of direction growth, the electrical parameter uniformity is relatively poor, can't satisfy the needs of focal plane device, and must be by＜211〉direction grown crystals, again by＜111 the direction sliced crystal obtains＜111 wafer.Because the anisotropic properties of crystalline material is＜211〉on the direction during growing single-crystal crystal ingot, all directions growth rate difference, thus growth interface is not a sub-circular, but " D " shape or trapezoidal.The difference of growth interface finally causes the crystal ingot profile of two different directions growths also different.＜111〉the crystal ingot equal-diameter part approximate circle cylinder of direction growth, the then similar dam of crystal ingot equal-diameter part of＜211〉direction growths.This crystal ingots by＜211〉direction growths are＜111〉when cutting on the direction, need rotate to an angle.Because therefore direction of rotation can increase trapezoidal height to a certain extent, thereby dwindle the base aspect ratio perpendicular to big face (the trapezoidal base of growth interface just).Increase on this height still has sizable gap dimensionally with big base, and half of base size usually highly only arranged.This non-systematicness is a great challenge for the standardization technology of wafer.
Conventional semi-conducting material technical process be crystal growth, round as a ball, do main reference plane, cutting, chamfering.But because the particularity of indium antimonide material itself, on the one hand, the crystal ingot outward appearance is very irregular, can't realize by round as a ball technology; And on the other hand, even realized round as a ball technology, owing to need the gyration cutting, the wafer that cuts out also is oval, so just makes round as a ball technology lose meaning.Therefore conventional semi-conducting material technology can't be applied to 3 inches indium antimonide material technologies.
Present indium antimonide material technology is after crystal growth, and directly the crystal ingot to non-regular profile cuts.Present chamfer angle technique can only be processed at the less wafer of area, and the indium antimonide wafer in 1.5 inches generally adopts original craft to do the plane of reference, and carries out the technology of chamfering.3 inches indium antimonide wafers are the same with former small size wafer, all are used for same detector, and owing to detector does not increase thickness because of 3 inches wafers of use, so detector is consistent to the final thickness requirement of two kinds of wafers.For the consideration of cost, original cut crystal thickness can not the proportional increase along with the increase of area, and the increase of area thickness ratio makes 3 inches wafer easier to be cracked.Manual rounding chamfer angle technique in the early time, bigger to people's technical ability dependence, can't form large-scale production, people's labour intensity is big.And, along the characteristics of cleavage surface cleavage, in the process of processing, be easy to cracked easily because the indium antimonide material hardness is little.3 inches indium antimonide Development of Materials make this situation of difficult further aggravate.
Summary of the invention
The invention provides a kind of method for grinding of indium antimonide wafer, poor in order to solve in the standardization moulding technology that exists in the prior art wafer uniformity, can't mass production, inefficiency, problem that yield rate is low.
For reaching above-mentioned purpose, the invention provides a kind of method for grinding of indium antimonide wafer, said method comprising the steps of:
Indium antimonide wafer to be processed is carried out image gather identification in advance, obtain the center data of described indium antimonide wafer;
Center data according to described indium antimonide wafer are provided with grinding parameter; Make described indium antimonide wafer lengthwise movement, and indium antimonide wafer rotation described in the lengthwise movement process, utilize emery wheel that described indium antimonide wafer is carried out grinding, finish the cyclotomy operation;
Utilizing emery wheel to finish operates the chamfering of described indium antimonide wafer upper surface and lower surface.
Wherein, indium antimonide wafer to be processed is carried out after image gathers identification in advance, main reference plane radius and actual difference of processing the main reference plane radius according to recognition image, determine the offset of described indium antimonide wafer center, select the sheet of accompanying then with described indium antimonide wafer solid colour, regulate described position of accompanying sheet to be placed on described indium antimonide wafer, obtain the center data of described indium antimonide wafer.
Wherein, to the carrying out before the grinding of described indium antimonide wafer,, adjust the center of described indium antimonide wafer by regulating the transverse movement distance of mechanical handing wafer arm.
Wherein, to the carrying out before the grinding of described indium antimonide wafer,, adjust the center of described indium antimonide wafer by regulating the lengthwise movement distance of sucker.
Wherein, to described indium antimonide wafer carry out grinding the time, the removal amount in the feeding process each time should be smaller or equal to 2mm.
Wherein, when carrying out cyclotomy operation and chamfering operation, dash described emery wheel of pouring and indium antimonide wafer with cooling fluid.
Wherein, described cooling solution is a deionized water.
Wherein, the flow of described cooling solution is 3L/min.
Beneficial effect of the present invention is as follows:
The accurate positions wafer of the present invention center, reference plane position, the abrasion wheel grinding technology after the cooperation wafer identification is carried out cyclotomy and chamfered, reaches multistep effect rapid, that accurately grind.Reduced the limit problem that collapses in the chamfer process effectively, guaranteed the repeatability of process conditions, improved the uniformity of wafer profile, improved yield rate.
Description of drawings
Fig. 1 is the flow chart of the method for grinding of a kind of indium antimonide wafer of the embodiment of the invention.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, does not limit the present invention.
In order to solve the cyclotomy of 3 inches indium antimonide wafers; the chamfer angle technique problem; the invention provides a kind of identification of wafer pattern and supporting cyclotomy based on the wafer images recognition technology; chamfer machining indium antimonide wafer technology; not only solved existing manual processing technology precision; uniformity is poor; the problem that labour intensity is big; also efficiently solve indium antimonide wafer in batches; the large-scale production problem; and provided and divide a plurality of steps to carry out the subsequent treatment process of planar section cyclotomy and groove part chamfering after the wafer identification, can effectively solve the easy cleavage of wafer; breakable problem.Be different from traditional handicraft, the present invention can handle the data that provide according to identification at image intelligent identification back process equipment and accurately work, and these two technologies are merged into 3 inches piths in the indium antimonide wafer material technology.
As shown in Figure 1, the embodiment of the invention relates to a kind of method for grinding of indium antimonide wafer, may further comprise the steps:
Step S101, with sample (indium antimonide wafer to be processed, hereinafter to be referred as wafer) be placed on the workbench, carry out image and gather identification in advance, according to the main reference plane radius and the actual difference of processing the main reference plane radius of recognition image, determine the offset of center wafer position, select the suitable sheet of accompanying then with the wafer solid colour, adjusting accompanies sheet to be placed on the position of wafer, obtains suitable center wafer position data.
Wherein, sample to be processed can utilize cutting machine from＜211〉the direction crystal ingot rotates to an angle to cut and obtains.The wafer that cuts down from crystal ingot, the two sides has different physicochemical properties, in order to tell which face of wafer in follow-up technology is one side towards seed crystal, has defined in the semiconductor technology that processing has two straight flanges of certain angle as the major and minor plane of reference on circular wafer.In the InSb wafer technique, wafer is defined as the In face towards the one side of seed crystal; In faces up.Turn clockwise 120 ° location definition of main reference plane is the secondary plane of reference.For 3 inches indium antimonide wafers, secondary plane of reference length can be defined as 12mm, and main reference plane is generally the twice of secondary plane of reference length.Because the InSb wafer is similar to trapezoidal special shape, main reference plane is more little, the trapezoidal height that needs is big more, the diameter of crystal ingot also needs bigger, from the consideration of integrated cost, in order to process 3 inches indium antimonide wafers of standard on the crystal ingot than minor diameter, we are with main reference plane length definition 24,36, three kinds of length of 40mm, in the embodiment of the invention, main reference plane length adopts the 40mm that has more representative and practical significance.
VSE (Video Shape Engineer, IMAQ recognition system) wafer is gathered recognition technology and is had plurality of advantages such as real-time collection, accurately identification, positioning accuracy height, process stabilizing be controlled.The VSE technology adopts fixed position CCD (Charge-coupled Device, charge coupled cell), and non-regular wafer is carried out IMAQ and the identification of intelligent appearance and size, and a backlight has been formed IMAQ wafer placement workbench with acrylic plate.Be not easy to make staff's fatigue in order to provide a kind of, and don't influence the light source of accuracy of identification, backlight adopts independent adjustable red LED (Light Emitting Diode, light emitting diode).Fixed position CCD and workbench distance are certain, and its identification size, is calibrated by adjusting the focal length of CCD in advance by standard sample.
A virtual coordinate system is arranged on workbench, with directly over be 0 the degree, angle increases in the counterclockwise direction.The upper cover plate of workbench is provided with the working hole of putting into wafer, can be by the wafer that working hole is placed on the workbench by after the CCD collection, identification wafer profile, and the 3 inches only reference plane positions of indium antimonide wafer can processing of intelligence computation and the center of wafer.The plane of reference is owing to be a limit that processes on circular wafer, therefore, the direction wafer length minimum vertical with main reference plane is so recognition system also can be with in the trapezoidal wafer, the height of length minimum the shortest direction therewith is corresponding, and trapezoidal big base is identified as main reference plane position.The center wafer of system-computed, based on standardized semiconductor technology, in the standardization semiconductor technology, the wafer profile standardization is to realize in the round as a ball technology before the wafer cutting, only the edging chamfering in this technology, therefore, the cylindrical center of circular wafer is the center wafer of recognition of devices.For trapezoidal InSb wafer, only be equipment for trapezoidal wafer rounding, and be unlikely the center that the sub-circular wafer is processed in reference that waste material too provides.The reference processing dimension that equipment provides is a prerequisite to utilize wafer to greatest extent, because 3 inches trapezoidal wafer height of non-rule only have long base half, making full use of under the prerequisite of wafer, the center of wafer can be offset to long egative film, and long base is also corresponding to main reference plane.The wafer that processes has like this made full use of raw wafers, but because the center relies on long limit, thereby can cause the oversize of main reference plane, and this grinds, is very disadvantageous in the glossing follow-up wafer.In order to obtain expecting the standard size wafer of plane of reference size, non-flanged defective, we are pulled down to the center distance of expecting with main reference plane by the sheet of accompanying of placement on the opposite direction on long limit with the wafer solid colour.Adding the purpose of accompanying sheet, is in order to allow a certain direction of middle mind-set of recognition of devices move, to have reached the purpose of control processed wafer position.Because accompanying sector-meeting is the part of wafer by recognition of devices, equipment can accompany the sheet direction to move the middle mind-set of identification in order to reduce the waste for wafer like this.For example: three inches wafer radius R=76.2/2=38.1mm, main reference plane length 40mm, can calculate the length of center wafer according to Pythagorean theorem to main reference plane, be OF radius=32.429mm, if the OF radius that recognition of devices goes out does not change center wafer less than this numerical value, plane of reference length can be bigger, the excessive plane of reference can make the circularity variation of wafer, is unfavorable for follow-up wafer process technology like this.After sheet was accompanied in adding below the wafer, the OF radius had become 32.492mm by 30.516mm.
Step S102, the center data according to wafer are provided with grinding parameter, and the parameter of movement of wafers promptly is set, and parameter such as emery wheel running; Wafer lengthwise movement, and rotation in the motion, the emery wheel of rotation grinds away the redundance of wafer at a high speed, finishes the cyclotomy process.
After IMAQ identification technology, carry out emery wheel and rotate the cyclotomy chamfer angle technique at a high speed, remove the wafer redundance according to the step of setting.Be placed on the wafer on the workbench by hand, the round dot of virtual coordinate system all has certain difference on its center and the workbench on X, Y-axis.Virtual coordinate system on the workbench, direction vertically upward are defined as 0 °, and the big base of wafer and 0 ° of angle are the angle that sucker need rotate.The angle that equipment is placed for wafer does not require, and that is to say that angle can be 0～360 °.X, Y, θ direction are positioned at a plane, and X refers to the mechanical arm transverse movement, and Y refers to the sucker lengthwise movement, and θ refers in the sucker lengthwise movement process self 360 ° of rotation.Deviation on the X-axis is compensated by the transverse movement distance of adjusting mechanical handing wafer arm; Deviation on the Y-axis will be compensated by (the being lengthwise movement) distance that seesaws of adjusting sucker.Being identified system validation is the big base of wafer of main reference plane, its direction is also spent the position with 0 of virtual coordinate system certain angle, adsorb wafer in the process of sucker motion at mechanical arm, sucker will rotate corresponding angle to compensate this deviation, make processing the plane of reference can be in full accord with the big base of wafer direction.Behind the deviation compensation on X, Y, the θ direction, wafer is done the motion on Y, the θ direction under sucker absorption.
In the process of grinding, by the removal amount in the distance realization program setting of adjusting sucker central authorities and emery wheel edge, by test of many times, in order to guarantee crudy, the removal amount in the feeding process each time should be smaller or equal to 2mm.
In the cyclotomy chamfer process,, therefore need provide cooling fluid by coolant pump owing to be to rely on the high-speed grinding of emery wheel to realize.Cooling fluid is given the emery wheel and the wafer cooling of rotation at a high speed on the one hand, needs again on the other hand the particle that grinding is got off is taken away rapidly, in order to avoid particle brings scratch to fillet surface.This just needs cooling fluid also will have certain pressure, and through a series of experiments, final definite best cooling solution is a deionized water; Best cooling solution flow is 3L/min.
Step S103, after the cyclotomy process was finished, emery wheel was done the Z-direction motion, made the upper surface of the groove part top edge alignment wafer of emery wheel, finished the chamfer process of upper surface.By similar operations, finish the chamfer process of lower surface.Wafer returns to the sucker initial position under sucker absorption, finish the cyclotomy chamfer process.
After wafer is finished the cyclotomy chamfer process,, measure wafer diameter, chamfering width up and down,, in equipment, import respective value,, revise deviation to adjust the equipment running parameter if deviation goes beyond the scope to processed wafer selective examination.
Indium antimonide material cyclotomy wire rate under these process conditions reaches 10mm/sec, and when the single step removal amount reached 6mm, the fillet surface pattern was still comparatively desirable.Wafer profile parameter testing result after the cyclotomy chamfering shows, 3 inches indium antimonide wafer moulding schemes that this wafer collection analysis combines with the cyclotomy chamfering, can accurately locate well and accurately processing, thereby can reduce broken wafers well and improve wafer uniformity to greatest extent.
As can be seen from the above-described embodiment, the present invention is by adopting the collection of VSE wafer, recognition system, accurate positions wafer center, reference plane position, the abrasion wheel grinding technology after the cooperation wafer identification, carry out cyclotomy and chamfered, reach multistep effect rapid, that accurately grind.The wafer diameter of gained and plane of reference size Control are better, major-minor plane of reference angle can to guarantee, reduced the limit problem that collapses in the chamfer process effectively, guarantee in this process, the accurate wafer carry in each step, ensure the repeatability of different batches to the full extent, improve the uniformity of wafer profile; Can be well accurate processed wafer and reduce number of tiles in the wafer standardization technology as requested, improve yield rate; It is poor to solve in the standardization moulding technology of 3 inches indium antimonide wafer materials wafer uniformity, can't mass production, inefficiency, yield rate low etc. series of technical, 3 inches indium antimonide wafer Development of Materials and yield rate improved bigger contribution.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. the method for grinding of an indium antimonide wafer is characterized in that, said method comprising the steps of:
Indium antimonide wafer to be processed is carried out image gather identification in advance, obtain the center data of described indium antimonide wafer;
Center data according to described indium antimonide wafer are provided with grinding parameter; Make described indium antimonide wafer lengthwise movement, and indium antimonide wafer rotation described in the lengthwise movement process, utilize emery wheel that described indium antimonide wafer is carried out grinding, finish the cyclotomy operation;
Utilizing emery wheel to finish operates the chamfering of described indium antimonide wafer upper surface and lower surface.
2. the method for grinding of indium antimonide wafer as claimed in claim 1, it is characterized in that, indium antimonide wafer to be processed is carried out after image gathers identification in advance, main reference plane radius and actual difference of processing the main reference plane radius according to recognition image, determine the offset of described indium antimonide wafer center, select the sheet of accompanying with described indium antimonide wafer solid colour then, regulate described position of accompanying sheet to be placed on described indium antimonide wafer, obtain the center data of described indium antimonide wafer.
3. the method for grinding of indium antimonide wafer as claimed in claim 1 is characterized in that, to the carrying out before the grinding of described indium antimonide wafer, by regulating the transverse movement distance of mechanical handing wafer arm, adjusts the center of described indium antimonide wafer.
4. the method for grinding of indium antimonide wafer as claimed in claim 1 is characterized in that, to the carrying out before the grinding of described indium antimonide wafer, by regulating the lengthwise movement distance of sucker, adjusts the center of described indium antimonide wafer.
5. the method for grinding of indium antimonide wafer as claimed in claim 1 is characterized in that, to described indium antimonide wafer carry out grinding the time, the removal amount in the feeding process each time should be smaller or equal to 2mm.
6. the method for grinding of indium antimonide wafer as claimed in claim 1 is characterized in that, when carrying out cyclotomy operation and chamfering operation, dashes described emery wheel of pouring and indium antimonide wafer with cooling fluid.
7. the method for grinding of indium antimonide wafer as claimed in claim 6 is characterized in that, described cooling solution is a deionized water.
8. the method for grinding of indium antimonide wafer as claimed in claim 6 is characterized in that, the flow of described cooling solution is 3L/min.
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| CN103831685A (en) * | 2014-03-11 | 2014-06-04 | 佛山市南海鑫隆机工机械有限公司 | Automatic edge grinding method of special-shaped ceramic cups and plates and edge grinding auxiliary device |
| CN103985784A (en) * | 2014-04-18 | 2014-08-13 | 中国电子科技集团公司第十一研究所 | Polishing and chamfering method for semiconductor chip |
| CN104526493A (en) * | 2014-11-18 | 2015-04-22 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer edge polishing technology |
| CN105575856A (en) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Device for carrying out circle-cutting and chamfering on InSb |
| CN107598763A (en) * | 2017-10-24 | 2018-01-19 | 江门市奥伦德光电有限公司 | The grinding wafer equipment and its Ginding process of a kind of more size compatibilities |
| CN115502884A (en) * | 2022-11-24 | 2022-12-23 | 苏州优晶光电科技有限公司 | Silicon carbide ingot outer diameter grinding control system and method |
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| CN107598763A (en) * | 2017-10-24 | 2018-01-19 | 江门市奥伦德光电有限公司 | The grinding wafer equipment and its Ginding process of a kind of more size compatibilities |
| CN115502884A (en) * | 2022-11-24 | 2022-12-23 | 苏州优晶光电科技有限公司 | Silicon carbide ingot outer diameter grinding control system and method |
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