CN105382947B - A kind of secondary cut method of silicon chip - Google Patents
A kind of secondary cut method of silicon chip Download PDFInfo
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- CN105382947B CN105382947B CN201510679054.XA CN201510679054A CN105382947B CN 105382947 B CN105382947 B CN 105382947B CN 201510679054 A CN201510679054 A CN 201510679054A CN 105382947 B CN105382947 B CN 105382947B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 227
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 222
- 239000010703 silicon Substances 0.000 title claims abstract description 222
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000005520 cutting process Methods 0.000 claims abstract description 121
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 13
- 239000010959 steel Substances 0.000 claims abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims abstract description 7
- 238000002224 dissection Methods 0.000 claims abstract description 6
- 230000007480 spreading Effects 0.000 claims abstract description 6
- 238000003892 spreading Methods 0.000 claims abstract description 6
- 230000005484 gravity Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000002994 raw material Substances 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The invention provides a kind of secondary cut method of silicon chip, step is：(1) locating slot cutting：Secondary cut edge of a knife locating slot is cut first on silicon single crystal, then silicon single crystal is once cut；(2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip after spreading and sorting, secondary cut silicon wafer side-by-side will be treated equidistantly or be tightly fixed in silicon chip cutting fixture, formed an one-piece machine member and fixed with glue；(3) positional dissection：One-piece machine member is fixed on multi-line cutting machine directly or by resin streak, and cutting steel wire is aligned the locating slot of the silicon chip being fixed in silicon chip cutting fixture one by one carries out centering positioning, and silicon chip is divided into two along the locating slot after accurate positioning.The method of the present invention largely improves the utilization rate of raw material, and greatly reduces device production cost, and the present invention is used for into the silicon polished production with heavily doped diffusion layer, can about reduce by 50% monolithic power consumption.
Description
Technical field
The invention belongs to czochralski silicon monocrystal cutting technique field, will be cut more particularly, to one kind multi-line cutting machine many
The method that individual silicon chip carries out secondary cut again.
Background technology
Most of current market, super large-scale integration are with Czochralski silicon wafer as backing material, the ever-larger diameterses of silicon chip
It is the Main way that it develops with surface smoothness high, multi-wire cutting technology is improving evenness of silicon wafer and surface geometry parameter
Aspect has greater advantage compared with miscellaneous equipment (inside diameter slicer etc.).Pass through multi-line cutting machine one in multi-wire saw in the past
Silicon single crystal bar is cut into certain thickness silicon chip by secondary property, so as to the batch for realizing silicon chip cuts.And in actual applications, it is necessary to
A large amount of silicon chips are cut again and is divided into two, to adapt to the specific use of silicon chip, this is difficult in current multi-wire cutting technology
Realize.
In the manufacturing process of some devices, reduced using the silicon polished replacement silicon epitaxial wafer with heavily doped diffusion layer
Into producing cost, its manufacturing process as shown in figure 1, in diffusion furnace, the silicon abrasive sheet of N-type (phosphorus) lightly doped (being represented with N-)
Two sides is spread all in the diffusion atmosphere of phosphorus by long-time high temperature phosphorous, and the two sides of silicon abrasive sheet can all form symmetrical N
Type (phosphorus) heavily doped region (being represented with N+).Silicon in the preparation flow for generally using at present after diffusion (as shown in Figure 1) grinds
Be ground by one side grinding is thinning and polishing, remove one side heavily doped region, form a piece of with N-/N+ structures
It is silicon polished, but this mode not only wastes raw material, and also production efficiency is relatively low, is unfavorable for producing in enormous quantities.
The content of the invention
In view of this, the present invention is directed to propose a kind of secondary cut method of silicon chip, to solve asking for prior art presence
Topic.
To reach above-mentioned purpose, the technical proposal of the invention is realized in this way：
A kind of secondary cut method of silicon chip, the cutting method is using conventional multi-line cutting method, it is characterised in that
Comprise the following steps：
(1) locating slot cutting：Before a cutting process, cutting secondary cut is positioned with the edge of a knife first on silicon single crystal
Groove, its purpose is used for secondary cut centering, and then silicon single crystal is once cut；
(2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip after spreading and sorting, will be treated
Secondary cut silicon wafer side-by-side is equidistant or is tightly fixed in silicon chip cutting fixture, and keeps the locating slot in same level
On line, form an one-piece machine member and fixed with glue；
(3) positional dissection：The one-piece machine member bonded in step (2) is fixed on multi-line cutting machine by resin streak or
It is directly anchored on multi-line cutting machine, cutting steel wire is aligned the locating slot of the silicon chip being fixed in silicon chip cutting fixture one by one
Centering positioning is carried out, is cut along the locating slot after accurate positioning and silicon chip is divided into two.
Further, in the step (3) treating secondary cut silicon wafer side-by-side be equidistantly fixed on silicon chip cutting fixture
In, the centering positioning method for using for by the silicon chip cut fixture in silicon chip gap alignment cutting steel wire gauze gap and
Separated time is directed at double centering positioning methods of cutting steel wire in silicon chip locating slot.
Further, treat that secondary cut silicon wafer side-by-side glues in closely overlaying silicon chip cutting fixture in the step (3)
Knot is fixed, and the centering positioning method for using is level and the four-way positioning measurement mode of vertical direction.
Further, the clamping slot depth is 1-2mm.
Further, the secondary cut technique that the secondary cut method of described silicon chip is used for after silicon chip diffusion, will expand
Dissipate the silicon chip after treatment be diffused again after secondary cut it is thinning.
Relative to prior art, the secondary cut method of silicon chip of the present invention has the advantage that：
Multiple silicon chips are pre-set locating slot by method in the present invention, and silicon chip after once cutting is along locating slot knife
It is tight-lipped close or equidistantly stack and Nian Jie with resin streak by cutting fixture, it is then attached on multi-line cutting machine, with multi-thread
Cutting machine completes the secondary cut of silicon chip, cuts into the thinner silicon chip of twice quantity, and this technology can change multi-line cutting machine only
Silicon single crystal rod can be cut and the situation of silicon chip can not be cut.During silicon polished with heavily doped diffusion layer of production, use
, can be divided into two for the silicon chip after multiple diffusion, then the cut surface of the silicon chip of the twice quantity for obtaining is entered by the method for the invention
Row grinding attenuated polishing processing, obtain twice quantity with the silicon polished of N-/N+ structures.So largely improve
The utilization rate of raw material, and device production cost is greatly reduced, the invention methods described is used for band heavily doped diffusion layer
Silicon polished production, the thick silicon chip less than 1-2mm can be carried out secondary cut, can about reduce by 50% monolithic power consumption.
The present invention also proposes the silicon chip cutting fixture a kind of secondary cut method suitable for silicon chip, to realize silicon chip
Secondary cut.
To reach above-mentioned purpose, the technical proposal of the invention is realized in this way：
A kind of silicon chip cuts fixture, and the silicon chip cutting fixture is that silicon chip cuts mould, and treats secondary cut silicon chip
Equidistantly it is fixed on side by side in the silicon chip cutting mould, wherein silicon chip cutting mould is by two pieces of parallel side plates and two pieces
The rectangular structure open up and down that parallel attachment plates are surrounded, is evenly distributed with some grooves, and two pieces on the inside of the side plate
Groove on parallel side plate is corresponded, and the A/F of the groove is consistent with secondary cut silicon wafer thickness is treated, for fixing
It is described to treat secondary cut silicon chip.
Further, the cross section of the cutting mould is " H " shape structure；The height h=silicon chips diameter of the mould+
(2-3)mm；Described mould inner groovy gap width L=silicon wafer thicknesses+(1-2) mm..
Further, the side plate is insulation board with the connecting plate.
Used as another preferred scheme, the silicon chip cuts fixture, including a right angle platform and a gravity briquetting, and treats two
Secondary cutting silicon chip is closely overlayed on the right angle platform, and the gravity briquetting is located at the right angle platform tail end, for compressing silicon chip.
Further, right angle platform slant setting in fixed silicon chip.
Relative to prior art, silicon chip cutting fixture of the present invention has the advantage that：
The right angle platform and gravity briquetting being obliquely installed coordinate can preferably position precision before cutting silicon chip cutting, it is ensured that silicon
While piece is bonded 90 °, it is ensured that gap and thickness scattered error are minimum between silicon chip；Silicon chip cutting mould is fixed using separation between silicon chip
Mode, this mode can avoid silicon chip from merging the cumulative errors for producing, while cutting mould upper end of the present utility model has being oriented to
Extending design can lift multi-line cutting machine and enter knife precision；The resin streak gap structure of lower end can better ensure that adhesive reinforcement, make
Silicon chip TTV is very nearly the same with once cutting silicon chip with thickness scattered error after must cutting.
Brief description of the drawings
The accompanying drawing for constituting a part of the invention is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate, for explaining the present invention, not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the silicon polished preparation flow of heavily doped diffusion layer in the prior art；
Fig. 2 is the silicon polished preparation flow of heavily doped diffusion layer of the present invention；
Fig. 3 is the structural representation of the silicon chip cutting mould in secondary cut method of the invention；
A kind of silicon chip cutting fixture of Fig. 4 applications-silicon chip cutting mould is fixed the structural representation of cutting to silicon chip；
Fig. 5 applications another kind silicon chip cutting fixture carries out the structural representation of secondary cut fixation to silicon chip.
Specific embodiment
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phases
Mutually combination.
Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
A kind of secondary cut method of silicon chip, the cutting method is using conventional multi-line cutting method, it is characterised in that
Comprise the following steps：
(1) locating slot cutting：Before a cutting process, cutting secondary cut is positioned with the edge of a knife first on silicon single crystal
Groove, its purpose is used for secondary cut centering, and then silicon single crystal is once cut；
(2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip after spreading and sorting, will be treated
Secondary cut silicon wafer side-by-side is equidistant or is tightly fixed in silicon chip cutting fixture, and keeps the locating slot in same level
On line, form an one-piece machine member and fixed with glue；
(3) positional dissection：The one-piece machine member bonded in step (2) is fixed on multi-line cutting machine by resin streak or
It is directly anchored on multi-line cutting machine, cutting steel wire is aligned the locating slot of the silicon chip being fixed in silicon chip cutting fixture one by one
Centering positioning is carried out, is cut along the locating slot after accurate positioning and silicon chip is divided into two.
Wherein, in the step (3) treating secondary cut silicon wafer side-by-side be equidistantly fixed on silicon chip cutting fixture in, adopt
Centering positioning method is gauze gap and the silicon chip that the silicon chip is cut the silicon chip gap alignment cutting steel wire in fixture
Separated time is directed at double centering positioning methods of cutting steel wire in locating slot；If treating that secondary cut silicon wafer side-by-side is tight in the step (3)
Close overlaying during silicon chip cuts fixture is adhesively fixed, and the centering positioning method for using is then for the four-way of level and vertical direction is determined
Position metering system；In above-mentioned steps, no matter take which kind of silicon chip fixed form or centering mode, the clamping slot depth are 1-
2mm。
The secondary cut technique that the secondary cut method of above-mentioned silicon chip is used for after silicon chip diffusion, by the silicon chip after DIFFUSION TREATMENT
Be diffused again after secondary cut thinning.
Multiple silicon chips are pre-set locating slot by method in the present invention, and silicon chip after once cutting is along locating slot knife
It is tight-lipped it is close stack, and by cutting fixture it is Nian Jie with resin streak, be then attached on multi-line cutting machine or be directly anchored to and be many
On wire cutting machine, the secondary cut of silicon chip is completed with multi-line cutting machine, cut into the thinner silicon chip of twice quantity, this technology can be with
Change the situation that multi-line cutting machine can only cut silicon single crystal rod and can not cut silicon chip.Thrown in silicon of the production with heavily doped diffusion layer
During mating plate, using the method for the invention, the silicon chip after multiple diffusion can be divided into two, then to the twice quantity that obtains
The cut surface of silicon chip be ground attenuated polishing processing, obtain twice quantity with the silicon polished of N-/N+ structures.So exist
The utilization rate of raw material is greatly enhanced, and greatly reduces device production cost, the invention methods described is used for
Silicon polished production with heavily doped diffusion layer, can carry out secondary cut by the thick silicon chip less than 1-2mm, can about reduce
50% monolithic power consumption.
As seen in figures 3-5, the cutting fixture of the silicon chip secondary cut employed in the present invention is voluntarily research and development and sets
Meter workpiece, it is therefore an objective to which the method in the auxiliary present invention is implemented to the secondary cut of silicon chip, but silicon chip involved in the present invention
Secondary cut method is not limited to the fixed workpiece arrived mentioned in the present invention, and other can play same or similar fixation
Or the setting tool or frock of fixed effect go for the method in the present invention, while the present invention is in silicon chip position fixing process
In can also use some survey tools or frock, be conventional silicon chip positioning survey tool.
As shown in figure 3, being that the cutting used during carrying out secondary cut to silicon chip using the method for the present invention is consolidated
Determine part-silicon chip cutting mould, it is the rectangular of the opening up and down that is surrounded by two pieces of parallel side plates 21 and two pieces of parallel attachment plates 22
Body structure, the groove 1 that the inner side of the side plate 21 is evenly distributed with some grooves 1, and two pieces of parallel side plates is corresponded, institute
The A/F for stating groove 1 is consistent with secondary cut silicon wafer thickness is treated, for fixing the silicon chip to be cut.
The top of the cutting mould 2 possesses silicon chip and is oriented to progradation, and specifically, the cross section of the connecting plate 22 is
" H " shape structure, the structure can ensure that the upper end of mould 2 can play a part of to be oriented to for cutting steel wire and extend, can be lifted
Multi-line cutting machine enters knife precision.
Meanwhile, in order to preferably secondary cut silicon chip 3, height h=silicon chips diameter+(2-3) of the mould 2 are treated in fixation
mm；The inner groovy gap width L=silicon wafer thicknesses of the mould 2+(1-2) mm.In order to prevent in cutting process for silicon chip performance
Destruction, the side plate is insulation board with the connecting plate.
Using above-mentioned silicon chip cutting mould as cutting fixture, the operating procedure of secondary cut method is carried out to silicon chip
For：1) locating slot cutting：Before a cutting process, secondary cut edge of a knife locating slot, positioning are cut first on silicon single crystal
Groove depth is 1-2mm, and its purpose is used for secondary cut centering, and then silicon single crystal is once cut；
2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip, incited somebody to action after spreading thinning sorting
Treat that secondary cut silicon wafer side-by-side is equidistantly fixed in silicon chip cutting mould, and keep the locating slot in the same horizontal line,
Form an one-piece machine member and fixed with glue；
3) positional dissection：By step 2) the middle one-piece machine member for having bonded is bonded on resin streak, and the resin streak is consolidated
It is scheduled on multi-line cutting machine, using by the gauze gap of the silicon chip gap alignment cutting steel wire of the mould and silicon chip locating slot points
Line is directed at double centering positioning methods of cutting steel wire, is cut along the locating slot after accurate positioning and silicon chip is divided into two.
As shown in figure 5, being the another kind used during carrying out secondary cut to silicon chip using the method for the present invention
Cutting fixture, including a right angle platform 5 and a gravity briquetting 6, and treat that secondary cut silicon chip 3 closely overlays the right angle platform 5
Upper (right angle platform slant setting in fixed silicon chip), the gravity briquetting 6 is located at the inclination tail end of right angle platform 5, is used for
Compression treats secondary cut silicon chip 3.
Use said apparatus as cutting fixture secondary cut method operating procedure for：
1) locating slot cutting：Before a cutting process, secondary cut edge of a knife locating slot is cut first on silicon single crystal,
Clamping slot depth is 1-2mm, and its purpose is used for secondary cut centering, and then silicon single crystal is once cut；
2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip, incited somebody to action after spreading thinning sorting
Treat that secondary cut silicon chip is closely stacked together along locating slot direction, and keep the locating slot in the same horizontal line, formed
One one-piece machine member is simultaneously fixed with glue, and will be integrally positioned on tilted-putted 90 ° of right angle platforms, in table top tail end using weight
Force block compression, be then bonded together, to ensure silicon chip between gap and thickness scattered error it is minimum；
3) positional dissection：The one-piece machine member that will be glued is directly anchored on multi-line cutting machine, with reference to four positioning measurements (i.e. water
The flat four-way positioning measurement mode with vertical direction) with once cut locating slot centering cutting position, along locating slot direction by silicon
Piece carries out secondary cut.
Embodiment
Raw material：Φ 125mm heavy doping silicon single crystal rods.
Cutting parameter is as follows：
According to above-mentioned cutting parameter to raw material silicon crystal bar respectively according to the cutting shown in the old process and Fig. 2 shown in Fig. 1
Flow processing silicon chip obtains the technological process and relevant parameter contrast such as following table of final polished silicon wafer：
Contrasted by Fig. 1 and Fig. 2, and in conjunction with the embodiments in the list data of piece rate measuring and calculating of diffusion and furbishing sheet can be with
Draw, the silicon polished of heavily doped diffusion layer improves about 40% by the latter's flow slice number, with reference to the raw material in process
And process costs can be calculated, it is left that the polished silicon wafer after being processed using this method can reduce by 20% relative to the cost of common process
The right side, therefore, this inventive technique can reduce the silicon polished processing cost for recycling diffusion layer, increase silicon polished production capacity.
In above-described embodiment Φ 125mm heavy doping silicon single crystal rods are selected, it is necessary to explanation is practical operation, for Φ
Can be divided into two for the silicon chip using the method for cutting silicon chips in the present invention by 76mm-150mm sizes silicon chip, to reach drop
The silicon polished processing cost of low recycling diffusion layer, increases the purpose of silicon polished production capacity.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention
Within god and principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of secondary cut method of silicon chip, the cutting method is using conventional multi-line cutting method, it is characterised in that bag
Include following steps：
(1) locating slot cutting：Before a cutting process, secondary cut edge of a knife locating slot is cut first on silicon single crystal, its
Purpose is used for secondary cut centering, and then silicon single crystal is once cut；
(2) silicon chip is fixed：Silicon chip after once cutting is obtained treating secondary cut silicon chip after spreading and sorting, will be treated secondary
Cutting silicon wafer side-by-side is equidistant or is tightly fixed in silicon chip cutting fixture, and keeps the locating slot in same horizontal line
On, form an one-piece machine member and fixed with glue；
(3) positional dissection：The one-piece machine member bonded in step (2) is fixed on multi-line cutting machine by resin streak or direct
It is fixed on multi-line cutting machine, the locating slot that cutting steel wire is aligned the silicon chip being fixed in silicon chip cutting fixture one by one is carried out
Centering is positioned, and is cut along the locating slot after accurate positioning and silicon chip is divided into two.
2. the secondary cut method of silicon chip according to claim 1, it is characterised in that：Treat secondary in the step (2)
Cutting silicon wafer side-by-side is equidistantly fixed in silicon chip cutting fixture, and the centering positioning method for using is fixed for the silicon chip is cut
Double centerings of separated time alignment cutting steel wire are determined in the gauze gap of the silicon chip gap alignment cutting steel wire in part and silicon chip locating slot
Position mode.
3. the secondary cut method of silicon chip according to claim 1, it is characterised in that：Secondary cutting is treated in the step (2)
Cut during silicon wafer side-by-side closely overlays silicon chip cutting fixture and be adhesively fixed, the centering positioning method for using is level and Vertical Square
To four-way positioning measurement mode.
4. the secondary cut method of silicon chip according to claim 1, it is characterised in that：The clamping slot depth is 1-2mm.
5. the secondary cut method of the silicon chip according to claim any one of 1-4, it is characterised in that：The two of described silicon chip
The secondary cut technique that secondary cutting method is used for after silicon chip diffusion, is carried out again after the silicon chip after DIFFUSION TREATMENT is carried out into secondary cut
Diffusion is thinning.
6. the secondary cut method of silicon chip according to claim 1, it is characterised in that：The silicon chip cutting fixture is silicon
Piece cuts mould, and treats that secondary cut silicon wafer side-by-side is equidistantly fixed in the silicon chip cutting mould, wherein the silicon chip point
It is the rectangular structure open up and down surrounded by two pieces of parallel side plates and two pieces of parallel attachment plates to cut mould, the side plate it is interior
Side is evenly distributed with groove on some grooves, and two pieces of parallel side plates and corresponds, the A/F of the groove with treat two
Secondary cutting silicon wafer thickness is consistent, for treating secondary cut silicon chip described in fixation.
7. the secondary cut method of silicon chip according to claim 6, it is characterised in that：The cross section of the cutting mould is
" H " shape structure；Height h=silicon chips diameter+(2-3) mm of the mould；The mould inner groovy gap width L=silicon wafer thicknesses
+(1-2)mm。
8. the secondary cut method of silicon chip according to claim 6, it is characterised in that：The silicon chip cutting mould is insulation
Plate material is constituted.
9. the secondary cut method of silicon chip according to claim 1, it is characterised in that：The silicon chip cutting fixture includes
One right angle platform and a gravity briquetting, and treat that secondary cut silicon chip is closely overlayed on the right angle platform, the gravity briquetting is located at
The right angle platform tail end, for compressing silicon chip.
10. the secondary cut method of silicon chip according to claim 9, it is characterised in that：The right angle platform is in fixed silicon chip
When slant setting.
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| CN107030911A (en) * | 2017-05-15 | 2017-08-11 | 天津市环欧半导体材料技术有限公司 | The level measurement method and frock of a kind of use multi-line cutting machine secondary cut silicon chip |
| CN111037766A (en) * | 2019-12-19 | 2020-04-21 | 江苏高照新能源发展有限公司 | Manufacturing method of low-cost monocrystalline silicon wafer for photovoltaic cell |
| CN113601738B (en) * | 2021-07-16 | 2022-12-23 | 宇泽半导体(云南)有限公司 | Processing method for processing rectangular photovoltaic cell silicon wafer by using native single crystal silicon rod |
| CN113681736A (en) * | 2021-07-30 | 2021-11-23 | 隆基绿能科技股份有限公司 | Silicon rod processing method |
| CN113698083A (en) * | 2021-09-26 | 2021-11-26 | 浙江美迪凯光学半导体有限公司 | Thick glass accurate positioning cutting process |
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| US6119673A (en) * | 1998-12-02 | 2000-09-19 | Tokyo Seimitsu Co., Ltd. | Wafer retrieval method in multiple slicing wire saw |
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