CN102148300A - Manufacturing method of ultraviolet LED (light-emitting diode) - Google Patents
Manufacturing method of ultraviolet LED (light-emitting diode) Download PDFInfo
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- CN102148300A CN102148300A CN2011100638678A CN201110063867A CN102148300A CN 102148300 A CN102148300 A CN 102148300A CN 2011100638678 A CN2011100638678 A CN 2011100638678A CN 201110063867 A CN201110063867 A CN 201110063867A CN 102148300 A CN102148300 A CN 102148300A
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Abstract
The invention provides a manufacturing method of an ultraviolet LED (light-emitting diode), which comprises the following steps of: 1, taking a substrate; 2, sequentially growing a nucleating layer and an n-type layer on the substrate; 3, growing a multi-quantum well layer on the n-type layer; and 4, growing an electronic barrier layer and a p-type layer on the multi-quantum well layer to complete the structure growth. The method solves the problem of low output power of the ultraviolet LED through the traditional method of generating white light by ultraviolet lasing RGB (red, green and blue) fluorescent powder in white light solid-state illumination.
Description
Technical field
The invention belongs to nitride based materials growth and element manufacturing field, be meant a kind of manufacture method that can improve the ultraviolet LED of ultraviolet LED power output especially.
Background technology
White light solid-state illumination light-emitting diode (LED) is considered to the third generation lighting source after incandescent lamp and fluorescent lamp.Compare with conventional light source, a series of advantages such as the semiconductor illuminating light source of all solid state work has the luminous efficiency height, the life-span is long, volume is little, response speed is fast, anti-antidetonation is impacted, safe in utilization are a kind of environmental protection and energy-conservation green illumination light sources of meeting.
At present, the mode that realizes the white light solid-state illumination mainly contains three kinds, and the maximum of usefulness are blue-ray LED+YAG fluorescent material, yet the white light that obtains with this kind mode changes with transmit direction, its colour developing rate, colour temperature is along with the variation of operating current and working temperature has bigger variation.Secondly be exactly to swash with ultraviolet LED to penetrate RGB fluorescent material generation white light, because its luminous directivity that do not exist, color rendering index and colour temperature be not with operating current and temperature change generation significant change, while can also obtain different-colour by different RGB proportionings freely but the high white light of color rendering index is realized different lighting demands.Based on above advantage, the mode of this kind generation white light becomes the development trend of following white light LEDs.
But this kind produces the mode of white light exists a fatal shortcoming, and that can not produce powerful ultraviolet LED exactly.No matter be based on the luminous deep ultraviolet LED of AlGaN and also be based on InGaN and the luminous near ultraviolet LED of GaN, present power output is all very low.Therefore, want to make the mode of this kind generation white light to replace the mode of present blue-ray LED+YAG fluorescent material, will improve the ultraviolet LED power output.
Causing one of them low factor of ultraviolet LED power output is exactly that AlGaN, InGaN and GaN all exist lattice mismatch each other, causes epitaxial wafer defect concentration height.If can find a kind of and above material lattice matched materials, just can reduce defect concentration, eliminate piezoelectric polarization, improve the final power output of ultraviolet LED.
Based on above reason, consider another ternary nitride alloy A lInN.The bandwidth of AlN is 6.2eV, and the bandwidth of InN is 0.7eV, so the band gap width of AlInN has maximum adjustable extent in III group-III nitride ternary-alloy material.When the component of In is 0.18, Al
0.82In
0.18Lattice constant and the GaN of N mate, and this moment, its bandwidth was about 4.5eV, can consider to use Al
0.82In
0.18N/GaN replaces AlGaN/GaN.Through experiment and theoretical demonstration, find: compare with the AlGaN/GaN structure, on the one hand the Al of lattice match
0.82In
0.18The N/GaN Multiple Quantum Well can avoid because crackle or the dislocation that lattice mismatch brings; Al on the other hand
0.82In
0.18Bandwidth is about 4.5eV under the N room temperature, can stop the magnetic tape trailer of Multiple Quantum Well Zhonglei layer to absorb.Therefore, Al
0.82In
0.18The N/GaN structure can substitute for Al GaN/GaN structure.In addition, Al
0.82In
0.18Internal electric field in the N/GaN single quantum well is 3.64MVcm
-1, cause by spontaneous polarization that mainly it is luminous can to cover wave band very wide in the UV spectrum.So Al
0.82In
0.18The N/GaN structure can be used as a kind of ultra-violet light-emitting device, and luminous efficiency is above 30 times of corresponding AlGaN structure under the room temperature.
Simultaneously, because the lattice constant of AlInN has very big adjustable extent, make it excellent lattice matching be arranged with other epitaxial loayer, can also be used to preparing the heterostructure of no mismatches such as AlInN/InGaN and AlInN/AlGaN, by regulating different set of dispense ratios, these two kinds of structures can guarantee in ultraviolet range as the emission wavelength of the LED of active area.
Moreover, because AlInN excellent lattice matching function, in conjunction with the characteristics of the relative broad of its energy gap, can also be used as electronic barrier layer, replace traditional AlGaN structure, improve the injection efficiency of electronics, finally also will help to improve the power output of ultraviolet LED.
Summary of the invention
The objective of the invention is to, a kind of manufacture method of ultraviolet LED is provided, it can solve in the white light solid-state illumination and produce the low problem of white light this method medium ultraviolet LED power output with ultraviolet lase RGB fluorescent material.
For achieving the above object, the invention provides a kind of manufacture method of ultraviolet LED, comprise the steps:
Step 1: get a substrate;
Step 2: on substrate, grow into stratum nucleare and n type layer successively;
Step 3: the multiple quantum well layer of on n type layer, growing;
Step 4: growth electronic barrier layer and p type layer on multiple quantum well layer, finish the growth of structure.
Wherein said substrate is Sapphire Substrate or silicon substrate.
Wherein said nucleating layer is low temperature AI N layer or low temperature GaN layer, and the growth temperature of described low temperature AI N layer is 550-650 ℃, and the growth temperature of low temperature GaN is 500-600 ℃, and the thickness of this nucleating layer is 10-50nm.
Wherein said n type layer is high temperature AlGaN layer or GaN layer, and wherein the growth temperature of AlGaN is 1000-1150 ℃, and the growth temperature of GaN is 950-1100 ℃, and the thickness of this n type layer is 0.5-2 μ m.
The periodicity of wherein said multiple quantum well layer is 2-10.
Wherein said multiple quantum well layer is AlInN/AlGaN, AlInN/GaN or AlInN/InGaN, and wherein the trap layer thickness is 1.0-6.0nm, and barrier layer thickness is 5.0-20nm.
Wherein said electronic barrier layer is the AlInN layer, and its doping type is the p type, and growth temperature is 720-850 ℃, and thickness is 20-50nm.
Wherein said p type layer is AlGaN layer or GaN layer, and wherein the growth temperature of AlGaN layer is 1000-1150 ℃, and the growth temperature of GaN layer is 950-1100 ℃, and the thickness of this p type layer is 0.1-0.5 μ m.
Adopt the beneficial effect of said method to be: the present invention solves the low problem of ultraviolet LED power output that exists at present by using the AlInN material.The In component is that the lattice constant of 0.18 AlInN material is identical with GaN, but its energy gap exceeds about 0.9eV than GaN, uses Al
0.82In
0.18N/GaN makes Multiple Quantum Well, can avoid on the one hand because crackle or the dislocation that lattice mismatch brings reduces the piezoelectric polarization effect; Al on the other hand
0.82In
0.18Bandwidth is about 4.5eV under the N room temperature, can stop the magnetic tape trailer of Multiple Quantum Well Zhonglei layer to absorb.In like manner, obtain the AlInN/InGaN and the AlInN/AlGaN Multiple Quantum Well of lattice match, can receive same effect by regulating component.Adopt Al
0.82In
0.18When N makes electronic barrier layer effectively block electrons flow into p type layer, improve the electron-hole recombinations efficient of active area.Above method can improve the final power output of ultraviolet LED.
Description of drawings
For describing particular content of the present invention, the present invention is described in further detail below in conjunction with the drawings and specific embodiments, wherein:
Fig. 1 is a method flow schematic diagram of the present invention;
Fig. 2 is a structural representation of the present invention.
Embodiment
See also Figure 1 and Figure 2, the invention provides a kind of manufacture method of ultraviolet LED, comprise the steps:
Step 1: get a substrate 1, this substrate 1 is Sapphire Substrate or silicon substrate;
Step 2: on substrate 1, grow into stratum nucleare 2, n type layer 3 successively, described nucleating layer 2 is low temperature AI N layer or low temperature GaN layer, wherein the growth temperature of low temperature AI N layer is 550-650 ℃, and the growth temperature of low temperature GaN layer 2 is 500-600 ℃, and the thickness of this nucleating layer 2 is 10-50nm; Described n type layer 3 is high temperature AlGaN or GaN layer, and wherein the growth temperature of AlGaN layer is 1000-1150 ℃, and the growth temperature of GaN layer is 950-1100 ℃, and the thickness of this n type layer 3 is 0.5-2 μ m;
Step 3: growth multiple quantum well layer 4 on n type layer 3, described multiple quantum well layer 4 is AlInN/AlGaN, AlInN/GaN or AlInN/InGaN, and its trap layer thickness is 1.0-6.0nm, and barrier layer thickness is 5.0-20nm, and periodicity is 2-10;
Step 4: the electronic barrier layer 5 of on multiple quantum well layer 4, growing successively, p type layer 6, described electronic barrier layer 5 is the AlInN layer, and doping type is the p type, and growth temperature is 720-850 ℃, and thickness is 20-50nm; Described p type layer 6 is AlGaN layer or GaN layer, and wherein the growth temperature of AlGaN layer is 1000-1150 ℃, and the growth temperature of GaN layer is 950-1100 ℃, and the thickness of this p type layer 6 is 0.1-0.5 μ m, finishes the growth of structure.
Example
Please consult Fig. 1 and Fig. 2 again, the invention provides a kind of manufacture method of ultraviolet LED, comprise the steps:
Step 1: get sapphire one substrate 1;
Step 2: grow into stratum nucleare 2, n type layer 3 on substrate 1 successively, described nucleating layer 2 is low temperature GaN, and its growth temperature is 550 ℃, and thickness is 30nm; Described n type layer 3 is a high temperature GaN layer, and its growth temperature is 1050 ℃, and thickness is 1.5 μ m;
Step 3: growth multiple quantum well layer 4 on n type layer 3, described multiple quantum well layer 4 is AlInN/GaN, and its trap layer thickness is 3.0nm, and barrier layer thickness is 12.0nm, and periodicity is 5;
Step 4: the electronic barrier layer 5 of on multiple quantum well layer 4, growing respectively, p type layer 6, described electronic barrier layer 5 is the AlInN layer, and its doping type is the p type, and growth temperature is 800 ℃, and thickness is 30nm; Described p type layer 6 is the GaN layer, and its growth temperature is 1000 ℃, and thickness is that 0.2 μ m finishes the growth of structure.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the manufacture method of a ultraviolet LED comprises the steps:
Step 1: get a substrate;
Step 2: on substrate, grow into stratum nucleare and n type layer successively;
Step 3: the multiple quantum well layer of on n type layer, growing;
Step 4: growth electronic barrier layer and p type layer on multiple quantum well layer, finish the growth of structure.
2. the manufacture method of ultraviolet LED according to claim 1, wherein said substrate is Sapphire Substrate or silicon substrate.
3. the manufacture method of ultraviolet LED according to claim 1, wherein said nucleating layer is low temperature AI N layer or low temperature GaN layer, the growth temperature of described low temperature AI N layer is 550-650 ℃, and the growth temperature of low temperature GaN is 500-600 ℃, and the thickness of this nucleating layer is 10-50nm.
4. the manufacture method of ultraviolet LED according to claim 1, wherein said n type layer is high temperature AlGaN layer or GaN layer, and wherein the growth temperature of AlGaN is 1000-1150 ℃, and the growth temperature of GaN is 950-1100 ℃, and the thickness of this n type layer is 0.5-2 μ m.
5. the manufacture method of ultraviolet LED according to claim 1, the periodicity of wherein said multiple quantum well layer is 2-10.
6. the manufacture method of ultraviolet LED according to claim 1, wherein said multiple quantum well layer is AlInN/AlGaN, AlInN/GaN or AlInN/InGaN, and wherein the trap layer thickness is 1.0-6.0nm, and barrier layer thickness is 5.0-20nm.
7. the manufacture method of ultraviolet LED according to claim 1, wherein said electronic barrier layer is the AlInN layer, and its doping type is the p type, and growth temperature is 720-850 ℃, and thickness is 20-50nm.
8. the manufacture method of ultraviolet LED according to claim 1, wherein said p type layer is AlGaN layer or GaN layer, and wherein the growth temperature of AlGaN layer is 1000-1150 ℃, and the growth temperature of GaN layer is 950-1100 ℃, and the thickness of this p type layer is 0.1-0.5 μ m.
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Cited By (5)
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| CN105280768A (en) * | 2015-09-18 | 2016-01-27 | 华灿光电股份有限公司 | Epitaxial wafer growth method having high luminescence efficiency |
| CN105449052A (en) * | 2014-08-25 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD |
| CN105895759A (en) * | 2016-06-24 | 2016-08-24 | 太原理工大学 | Deep ultra violet (DUV) light-emitting diode (LED) epitaxial wafer structure |
| CN106784180A (en) * | 2016-12-06 | 2017-05-31 | 中国科学院半导体研究所 | The preparation method of UV LED device |
| CN106848011A (en) * | 2017-01-24 | 2017-06-13 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105449052A (en) * | 2014-08-25 | 2016-03-30 | 东莞市中镓半导体科技有限公司 | Method for preparing high-efficiency near-ultraviolet LED with asymmetric current expansion layer by using MOCVD |
| CN105449052B (en) * | 2014-08-25 | 2018-03-13 | 东莞市中镓半导体科技有限公司 | A kind of method that high brightness near ultraviolet LED is prepared using MOCVD technologies |
| CN105280768A (en) * | 2015-09-18 | 2016-01-27 | 华灿光电股份有限公司 | Epitaxial wafer growth method having high luminescence efficiency |
| CN105280768B (en) * | 2015-09-18 | 2018-10-09 | 华灿光电股份有限公司 | Epitaxial wafer growth method with high-luminous-efficiency |
| CN105895759A (en) * | 2016-06-24 | 2016-08-24 | 太原理工大学 | Deep ultra violet (DUV) light-emitting diode (LED) epitaxial wafer structure |
| CN105895759B (en) * | 2016-06-24 | 2018-07-17 | 太原理工大学 | A kind of DUV LED epitaxial wafer structure |
| CN106784180A (en) * | 2016-12-06 | 2017-05-31 | 中国科学院半导体研究所 | The preparation method of UV LED device |
| CN106848011A (en) * | 2017-01-24 | 2017-06-13 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
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| CN106848011B (en) * | 2017-01-24 | 2018-11-02 | 厦门三安光电有限公司 | Gallium nitride based light emitting diode and preparation method thereof |
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Application publication date: 20110810 |