CN103779450A - Integration method for increasing luminous power of LED - Google Patents
Integration method for increasing luminous power of LED Download PDFInfo
- Publication number
- CN103779450A CN103779450A CN201210396163.7A CN201210396163A CN103779450A CN 103779450 A CN103779450 A CN 103779450A CN 201210396163 A CN201210396163 A CN 201210396163A CN 103779450 A CN103779450 A CN 103779450A
- Authority
- CN
- China
- Prior art keywords
- led
- film
- epitaxial
- quantum well
- luminous power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 8
- 230000010354 integration Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000004020 luminiscence type Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Disclosed is an integration method for increasing luminous power of an LED. The method comprises successively growing a buffer layer film system, an n-type film system, a multi-quantum well system and a p-type film system from the bottom to the top on a substrate in an epitaxial mode to form a conventional LED epitaxial structure, and continuing growing an additional n-type film system, an additional multi-quantum well system and an additional p-type film system on the LED epitaxial structure in an epitaxial mode to form a semiconductor amplifier. Provided by the invention is also a multi-section LED structure additionally arranged in a conventional LED chip structure along an epitaxial growth direction. The advantages are as follows: a structure provided with light amplification gains is added in the growth direction of a conventional LED chip structure so that the light extraction efficiency is substantially increased, at the same time, the luminescence area of a chip is not enlarged, and the device actual production power of a single wafer is effectively improved; and the multi-section LED structure is additionally arranged in the conventional LED chip structure along an epitaxial growth direction so that an LED chip has the effect of multi-stage series connection, the luminous power is substantially improved, large-power light output is realized, and the chip cost is lowered at the same time.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, relate to a kind of light-emitting diode, particularly the device architecture of high efficiency high brightness LED and manufacture method thereof.
Background technology
Light-emitting diode (LED) is a kind of solid-state semiconductor device that can be light by electric energy conversion.With traditional light source, as incandescent lamp is compared with electricity-saving lamp, light-emitting diode has that the life-span is long, light efficiency is high, color rendering good, stability is high, radiationless, low-power consumption, antidetonation, the plurality of advantages such as pollution-free, is called as the most promising green illumination light source of 21 century.
Along with the development of illumination market demand, light-emitting diode must be towards low cost, high brightness future development.For increasing luminosity direction, main flow has two kinds of solutions at present, and one is to increase forward current, improves luminosity, but current luminous diode device structure is in the situation that large electric current injects, a difficult problem that exists quantum efficiency significantly to reduce.The second is to increase forward voltage, that is to say high-voltage LED, by array structure, device is operated under lower electric current, all has a certain upgrade for device lifetime, electrical efficiency.But above two kinds of solutions all need to increase the chip area of light-emitting diode, number of devices on single disk is significantly reduced.This runs counter to light-emitting diode towards future development cheaply.Therefore how not expand chip light emitting area as far as possible, can improve by a relatively large margin again chip light emitting efficiency, be a difficult problem at present.
Summary of the invention
The object of the invention is to the problem for prior art, a kind of LED chip construction of high-luminous-efficiency and the method for increase LED luminous power are provided, in traditional LED chip structure growth direction, increase the structure with light amplification gain and significantly increase light extraction efficiency, do not expand the light-emitting area of chip, effectively improved the actual production capacity of device of single disk simultaneously.Of the present invention also providing in traditional LED chip structure increases more piece LED structure along epitaxial growth direction, makes LED chip have the effect of plural serial stage, and luminous power is significantly improved.
Technical scheme of the present invention is: the LED epitaxial film of growing on metal-organic chemical vapor deposition equipment, molecular beam epitaxy and hydride gas-phase epitaxy equipment, the method of preparation is: on substrate, epitaxial buffer layer film system, N-shaped film are successively from the bottom to top, Multiple Quantum Well is, the basic LED epitaxial structure of the thin Layer structure of p-type, continues extension N-shaped film system, Multiple Quantum Well system, the thin Layer structure semiconductor optical amplifier of p-type on basic LED epitaxial structure.Its basic principle that increases LED luminous power is that the light that the Multiple Quantum Well in LED basic structure is sent, through semiconductor optical amplifier, is realized amplification by stimulated radiation, thereby increases the luminous power of LED.The present invention also provides in traditional LED chip structure in addition increases more piece LED structure along epitaxial growth direction: LED epitaxial film is expanded as multi-stage LED cascaded structure, epitaxial buffer layer film system on substrate, N-shaped film system, Multiple Quantum Well system, the thin Layer structure first order of p-type basic luminous units, N-shaped film system on the first order, Multiple Quantum Well system, the thin Layer structure of p-type second level luminescence unit, the N-shaped film of extension system on the second level, Multiple Quantum Well system, the thin Layer structure third level of p-type luminescence unit, the N-shaped film of extension system on third level luminescence unit, Multiple Quantum Well system, the thin Layer structure fourth stage of p-type luminescence unit, the second level, three grades, level Four luminescence unit can also be designed to semiconductor optical amplifier, such as the third level can be designed as first order semiconductor optical amplifier, fourth stage unit can be designed as second level semiconductor optical amplifier.Its basic principle that increases LED luminous power is, the luminous and luminous light sending in the second level of the first order, through first order semiconductor optical amplifier and second level semiconductor optical amplifier, realizes amplification by stimulated radiation, thereby significantly increase the luminous efficiency of LED.
Advantage of the present invention is in traditional LED chip structure growth direction, to increase the structure with light amplification gain significantly to increase light extraction efficiency, does not expand the light-emitting area of chip simultaneously, has effectively improved the actual production capacity of device of single disk.In traditional LED chip structure, increase more piece LED structure along epitaxial growth direction, make LED chip there is the effect of plural serial stage, luminous power is significantly improved.Patent of the present invention has solved the low bottleneck of quantum efficiency in LED, has improved the luminous efficiency of LED, has realized powerful light output.
Accompanying drawing explanation
Fig. 1 application the present invention increases the LED epitaxial structure schematic diagram of the integrated approach of LED luminous power;
Fig. 2 the present invention increases more piece LED structural representation along epitaxial growth direction in traditional LED chip structure;
Fig. 3 is the structural representation at blue light extension of gallium nitride-based LED by the invention process;
Grow in the gallium arsenide substrate structural representation of the GaAs based LED epitaxial film of multistage ruddiness of Fig. 4.
embodiment
Further illustrate embodiments of the invention below in conjunction with accompanying drawing:
Embodiment the mono-, the 2nd, two kinds of general embodiment of LED chip structure of the present invention.In embodiment tri-, four, be the application of the present invention on concrete epitaxial material.
Embodiment mono-
The LED epitaxial film of growing on metal-organic chemical vapor deposition equipment, molecular beam epitaxy and hydride gas-phase epitaxy equipment, referring to Fig. 1, on substrate 101, epitaxial buffer layer film is 102 successively from the bottom to top, N-shaped film is 103, Multiple Quantum Well is 104, p-type film is the basic LED epitaxial structures of 105 compositions, continues extension N-shaped film and be 106, Multiple Quantum Well is 107, p-type film is 108 composition semiconductor optical amplifiers 109 on basic LED epitaxial structure.Described various films in LED epitaxial film are monofilm or multi-layer doping film or heterojunction rete.
Between cascade film system as p-type film be 105 and N-shaped film be 106 can fall, improve for decreased voltage effective injection of charge carrier and the match materials of extension, adopt the doped structure of similar grade doping or heterojunction.
The material composition of N-shaped film system, Multiple Quantum Well system, p-type film system according to the emission wavelength of LED is: indium phosphide or GaAs or gallium nitride, or relevant ternary or multi-element compounds, doped source is silicon, magnesium, zinc.
Embodiment bis-
LED epitaxial film is expanded as multi-stage LED cascaded structure.In traditional LED chip structure, increase more piece LED structure along epitaxial growth direction, as shown in Figure 2 on substrate 201 from the bottom to top successively epitaxial buffer layer film be 202, N-shaped film is 203, Multiple Quantum Well is 204, p-type film is 205, N-shaped film is 206, Multiple Quantum Well is 207, p-type film is 208, N-shaped film is 209, Multiple Quantum Well is 210, p-type film is 211, N-shaped film is 212, Multiple Quantum Well is 213, p-type film is 214, and wherein N-shaped film is 203, Multiple Quantum Well is 204, p-type film is 205 composition first order luminescence units 216, and the N-shaped film on first order luminescence unit 216 is 206, Multiple Quantum Well is 207, p-type film is 208 composition second level luminescence units 217, and on second level luminescence unit 217, the N-shaped film of extension is 209, Multiple Quantum Well is 210, p-type film is 211 composition third level luminescence units, and on third level luminescence unit, the N-shaped film of extension is 212, Multiple Quantum Well is 213, p-type film is 214 composition fourth stage luminescence unit, wherein third level luminescence units, fourth stage luminescence unit can be designed as semiconductor optical amplifier, and third level luminescence unit is first order semiconductor optical amplifier 218, fourth stage luminescence unit is second level semiconductor optical amplifier 219.Its basic principle that increases LED luminous power is, the light that send the first order luminous 216 and the second level luminous 217, through first order semiconductor optical amplifier 218 and second level semiconductor optical amplifier 219, realize amplification by stimulated radiation, thereby significantly increase the luminous efficiency of LED.
Between cascade film system as p-type film be 205 be 206 with N-shaped film, p-type film be 208 be 209 with N-shaped film, p-type film be 211 and N-shaped film be 212 can fall, improve for decreased voltage effective injection of charge carrier and the match materials of extension, adopt the doped structure of similar grade doping or heterojunction.
Embodiment tri-
Embodiment tri-is identical with embodiment mono-, difference is as shown in Figure 3, the Grown on Sapphire Substrates blue light extension of gallium nitride-based LED film of the present embodiment, extension uGaN302, nGaN303, InGaN base MQWs304, pGaN305, nGaN306, InGaN base MQWs307, pGaN308 successively from the bottom to top on sapphire 301.Wherein nGaN306, MQWs307 and pGaN308 composition semiconductor optical amplifier.Its basic principle that increases LED luminous power is that the light that InGaN base MQWs304 sends, through semiconductor optical amplifier, is realized amplification by stimulated radiation, thereby increases the luminous power of LED.
Embodiment tetra-
Embodiment tetra-is identical with embodiment bis-, difference is as shown in Figure 4, the GaAs based LED epitaxial film of multistage ruddiness of growing in the gallium arsenide substrate of the present embodiment, extension GaAs402 successively from the bottom to top on GaAs401, nGaAs 403, GaAs base MQWs404, pGaAs 405, nGaAs 406, GaAs base MQWs 407, pGaAs 408, nGaAs 409, GaAs base MQWs 410, pGaAs 411, nGaAs 412, GaAs base MQWs 413, pGaAs 414, wherein nGaAs 403, GaAs base MQWs404, pGaAs 405 forms the first order luminous 416, nGaAs 406, GaAs base MQWs 407, pGaAs 408 forms the second level luminous 417, nGaAs 409, GaAs base MQWs 410, pGaAs 411 forms first order semiconductor optical amplifier 418, nGaAs 412, GaAs base MQWs 413, pGaAs 414 forms second level semiconductor optical amplifier 419.Its basic principle that increases LED luminous power is, the light that send the first order luminous 416 and the second level luminous 417, through first order semiconductor optical amplifier 418 and second level semiconductor optical amplifier 419, realize amplification by stimulated radiation, thereby significantly increase the luminous efficiency of LED.Referring to Fig. 4.
Claims (6)
1. one kind increases the integrated approach of LED luminous power, it is characterized in that the LED epitaxial film of growing on metal-organic chemical vapor deposition equipment, molecular beam epitaxy and hydride gas-phase epitaxy equipment, integrated approach is: on substrate, epitaxial buffer layer film system, N-shaped film are successively from the bottom to top, Multiple Quantum Well is, the basic LED epitaxial structure of the thin Layer structure of p-type, continues extension N-shaped film system, Multiple Quantum Well system, the thin Layer structure semiconductor optical amplifier of p-type on basic LED epitaxial structure.
2. the integrated approach of increase LED luminous power according to claim 1, is characterized in that the described various films in LED epitaxial film are monofilm or multi-layer doping film or heterojunction rete.
3. the integrated approach of increase LED luminous power according to claim 1, is characterized in that increasing the semiconductor optical amplifier with light amplification gain in traditional LED chip structure growth direction.
4. the integrated approach of increase LED luminous power according to claim 1, it is characterized in that described N-shaped film is, Multiple Quantum Well is, the material composition of p-type film system according to the emission wavelength of LED is: indium phosphide or GaAs or gallium nitride, or relevant ternary or multi-element compounds, doped source is silicon, magnesium, zinc.
5. the integrated approach of increase LED luminous power according to claim 1, it is characterized in that LED epitaxial film to expand as multi-stage LED cascaded structure, epitaxial buffer layer film system on substrate, N-shaped film system, Multiple Quantum Well system, the thin Layer structure first order of p-type basic luminous units, N-shaped film system on the first order, Multiple Quantum Well system, the thin Layer structure of p-type second level luminescence unit, the N-shaped film of extension system on the second level, Multiple Quantum Well system, the thin Layer structure third level of p-type luminescence unit, the N-shaped film of extension system on third level luminescence unit, Multiple Quantum Well system, the thin Layer structure fourth stage of p-type luminescence unit, the second level, three grades, level Four luminescence unit can also be designed to semiconductor optical amplifier.
6. the integrated approach of increase LED luminous power according to claim 1, is characterized in that between cascade, film is the doped structure that p-type film system and N-shaped film system can also adopt similar grade doping or heterojunction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210396163.7A CN103779450A (en) | 2012-10-17 | 2012-10-17 | Integration method for increasing luminous power of LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210396163.7A CN103779450A (en) | 2012-10-17 | 2012-10-17 | Integration method for increasing luminous power of LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103779450A true CN103779450A (en) | 2014-05-07 |
Family
ID=50571491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210396163.7A Pending CN103779450A (en) | 2012-10-17 | 2012-10-17 | Integration method for increasing luminous power of LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779450A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105156985A (en) * | 2015-08-12 | 2015-12-16 | 京东方科技集团股份有限公司 | Backlight source and display device |
| CN106374018A (en) * | 2015-07-24 | 2017-02-01 | 晶元光电股份有限公司 | Light-emitting device and manufacturing method thereof |
| CN109585616A (en) * | 2018-12-05 | 2019-04-05 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial preparation method and ultraviolet LED |
| CN111834506A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Tripolar light-emitting tube with high power amplification factor and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485930A (en) * | 2002-09-29 | 2004-03-31 | 璨圆光电股份有限公司 | LED structure with low resistivity layer |
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN1910755A (en) * | 2004-10-22 | 2007-02-07 | 阿瓦戈科技Ecbuip(新加坡)股份有限公司 | Method and structure for improved led light output |
| CN1933198A (en) * | 2006-10-10 | 2007-03-21 | 华中科技大学 | Monolithic integrated white light diode |
| CN101281946A (en) * | 2008-05-21 | 2008-10-08 | 旭丽电子(广州)有限公司 | LED structure capable of being applied to AC cycle as well as drive method thereof |
| CN101427431A (en) * | 2006-02-23 | 2009-05-06 | 美商克立股份有限公司 | High efficiency leds with tunnel junctions |
| US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
| CN102593290A (en) * | 2012-01-18 | 2012-07-18 | 鄂尔多斯市荣泰光电科技有限责任公司 | White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip |
-
2012
- 2012-10-17 CN CN201210396163.7A patent/CN103779450A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1485930A (en) * | 2002-09-29 | 2004-03-31 | 璨圆光电股份有限公司 | LED structure with low resistivity layer |
| CN1490888A (en) * | 2003-09-17 | 2004-04-21 | �Ͼ���ҵ��ѧ | High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes |
| CN1910755A (en) * | 2004-10-22 | 2007-02-07 | 阿瓦戈科技Ecbuip(新加坡)股份有限公司 | Method and structure for improved led light output |
| CN101427431A (en) * | 2006-02-23 | 2009-05-06 | 美商克立股份有限公司 | High efficiency leds with tunnel junctions |
| CN1933198A (en) * | 2006-10-10 | 2007-03-21 | 华中科技大学 | Monolithic integrated white light diode |
| CN101281946A (en) * | 2008-05-21 | 2008-10-08 | 旭丽电子(广州)有限公司 | LED structure capable of being applied to AC cycle as well as drive method thereof |
| US20110204376A1 (en) * | 2010-02-23 | 2011-08-25 | Applied Materials, Inc. | Growth of multi-junction led film stacks with multi-chambered epitaxy system |
| CN102593290A (en) * | 2012-01-18 | 2012-07-18 | 鄂尔多斯市荣泰光电科技有限责任公司 | White-light LED (Light Emitting Diode) epitaxial wafer and manufacturing process thereof, and manufacturing method of white-light LED chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374018A (en) * | 2015-07-24 | 2017-02-01 | 晶元光电股份有限公司 | Light-emitting device and manufacturing method thereof |
| CN105156985A (en) * | 2015-08-12 | 2015-12-16 | 京东方科技集团股份有限公司 | Backlight source and display device |
| CN109585616A (en) * | 2018-12-05 | 2019-04-05 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial preparation method and ultraviolet LED |
| US11430915B2 (en) | 2018-12-05 | 2022-08-30 | Ma'anshan Jason Semiconductor Co., Ltd. | Ultraviolet LED epitaxial production method and ultraviolet LED |
| CN111834506A (en) * | 2020-06-12 | 2020-10-27 | 福州大学 | Tripolar light-emitting tube with high power amplification factor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103094269B (en) | White light emitting device and preparation method thereof | |
| JP2015046598A (en) | Semiconductor light emitting device including hole injection layer, and method of manufacturing the same | |
| CN106299038A (en) | A kind of method preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LED with doping content and Al component step variation | |
| CN102969416A (en) | Nitride light-emitting diode (LED) epitaxial wafer and growing method thereof | |
| CN102157646A (en) | Nitride LED structure and preparation method thereof | |
| CN103413877A (en) | Method for growing quantum well stress release layer of epitaxial structure and epitaxial structure | |
| CN106159047B (en) | Light emitting diode epitaxial structure with PN doped quantum barrier and preparation method thereof | |
| CN101540361A (en) | Silicon base grown AlGaInP LED epitaxial wafer and preparation method thereof | |
| CN114497301A (en) | Micro light-emitting diode | |
| CN103268912A (en) | Multiple-active-area high-efficiency optoelectronic device | |
| KR20140117117A (en) | Nitride semiconductor light emitting device | |
| CN103779450A (en) | Integration method for increasing luminous power of LED | |
| CN102347408B (en) | GaN-base double-blue-light wavelength luminescent device and preparation method thereof | |
| CN101740668B (en) | Light-emitting element | |
| CN104393131A (en) | Optical pumping white-light LED and preparation method thereof | |
| CN104300058A (en) | Green-yellow light LED with doped wide potential barrier structure | |
| CN102142492A (en) | Multiple quantum well structure, manufacturing method thereof and light emitting diode | |
| CN102148300A (en) | Manufacturing method of ultraviolet LED (light-emitting diode) | |
| CN103681997A (en) | LED chip capable of emitting light in required color and manufacturing method thereof | |
| CN106033788A (en) | Method of adopting MOCVD technology to manufacture 370-380nm high-brightness near ultraviolet LED | |
| CN102368524A (en) | High-efficient GaN-based semiconductor light emitting diode | |
| CN102122689A (en) | Multi-quantum well structure and manufacturing method thereof, and light emitting diode | |
| CN105098008A (en) | GaN-based light-emitting diode (LED) epitaxy structure containing ternary superlattice and preparation method of GaN-based LED epitaxy structure | |
| CN113725326A (en) | Ultraviolet LED epitaxial structure and preparation method and application thereof | |
| CN208637450U (en) | A kind of epitaxial structure of UV LED chips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140507 |
|
| WD01 | Invention patent application deemed withdrawn after publication |