CN102306676B - 一种硅基叠层太阳能电池 - Google Patents

一种硅基叠层太阳能电池 Download PDF

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CN102306676B
CN102306676B CN201110069804.3A CN201110069804A CN102306676B CN 102306676 B CN102306676 B CN 102306676B CN 201110069804 A CN201110069804 A CN 201110069804A CN 102306676 B CN102306676 B CN 102306676B
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王强
章国安
张建
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Nantong University
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Abstract

本发明涉及一种硅基叠层太阳能电池。它包括一顶电极、一底电极、P型多晶硅和N型多晶硅，还包括一层P型非晶硅，所述P型多晶硅覆盖在所述N型多晶硅上，在P型多晶硅与N型多晶硅之间构成一个PN结，所述顶电极和所述底电极分别连接在P型多晶硅的上端面和N型多晶硅的下端面上，所述一层P型非晶硅覆盖在P型多晶硅及顶电极上，P型非晶硅与P型多晶硅之间构成一个同型异质结。本发明利用顶层宽禁带的非晶硅薄膜作光吸收层与多晶硅衬底构成异质结，利用底层窄禁带的多晶硅作光吸收层，在多晶硅中形成PN结，所述两结共用一个P型多晶硅层，减少了一个电池间的界面，避免了电池间界面对于电流的复合作用，提高了太阳能电池的光电转换效率比单结多晶硅电池提高5-10%。

Description

一种硅基叠层太阳能电池
技术领域
本发明涉及太阳能电池技术，尤其涉及一种硅基叠层太阳能电池。
背景技术
太阳能电池是一种光电能量转换器件，可以将光能转变为电能并且在转换过程中没有任何污染物的排放，是最重要的清洁能源之一。其基本原理是利用半导体材料构成的PN结，光照在太阳能电池内产生电子-空穴对，经过PN结电场作用，并通过电极引出形成光电流。由于太阳光由不同波长的光波组成，而太阳能电池只能吸收能量大于其能隙值的光子，因此，太阳光中的能量只有一部分被转换为电能，大部分被电极和半导体材料吸收转变为无用的热能。为了能提高太阳能电池的利用效率，人们提出了叠层太阳能电池的概念，按能隙从大到小的顺序从外向里叠合起来，让波长短的光被宽能隙的材料吸收，波长长的光透射进去被窄能隙的材料利用，这样可以最大限度将太阳能量转换为电能，从而提高了太阳能电池的转换效率。目前，主要的叠层太阳能电池为化合物半导体太阳能电池，但是，由于制备电池的设备昂贵，所用制备电池的原料地球储量稀少，同时制备过程中毒性大，污染严重等多种因素阻碍了其大力推广。而硅基太阳能电池所用材料地球储量丰富，且制备工艺简单，在清洁能源产业获得广泛的应用，其结构请参见图2。它主要由顶电极2、底电极6、P型多晶硅3和N型多晶硅5组成，P型多晶硅3和N型多晶硅叠合连接，在叠合处构成一个PN结，顶电极2和底电极6分别置于P型多晶硅3上端面和N型多晶硅下端面，最终形成一单结多晶硅太阳能电池。但该种太阳能电池的太阳能转换效率偏低，有待进一步改进。
发明内容
本发明的目的在于提供一种具有较高太阳能转换效率的一种硅基叠层太阳能电池，上述目的由下述技术方案来实现：
所述太阳能电池，包括一顶电极、一底电极、P型多晶硅和N型多晶硅，还包括一层P型非晶硅，所述P型多晶硅连接在所述N型多晶硅上，在P型多晶硅与N型多晶硅之间构成一个PN结，所述顶电极和所述底电极分别连接在P型多晶硅的上端面和N型多晶硅的下端面，所述P型非晶硅覆盖在P型多晶硅及顶电极上，使顶电极位于P型非晶硅与P型多晶硅之间，P型非晶硅与P型多晶硅之间构成一个同型异质结。
所述太阳能电池的进一步设计在于，所述一层P型非晶硅由P型非晶硅薄膜形成，该非晶硅薄膜的禁带宽度大致在为1.7ev。
所述太阳能电池的进一步设计在于，所述P型多晶硅的禁带宽度大致为1.1ev。
本发明的叠层太阳能电池由两层不同带隙的电池叠加而成，顶层利用宽禁带的非晶硅薄膜作光吸收层与多晶硅衬底构成异质结电池。底层利用窄禁带的多晶硅作光吸收层，在多晶硅中形成PN结作为底电池。与普通叠层电池设计不同在于顶电池与底电池共用一个P型多晶硅层，减少了一个电池间的界面，避免了电池间界面对于电流的复合作用，提高了电池效率，可以使叠层太阳能电池的光电转换效率比单层多晶硅电池提高5-10％。
本发明的顶电极设置在P型多晶硅层与P型非晶硅层之间，与多晶硅形成欧姆接触，而不是通常惯用的设置在电池最上层，即设置在非晶硅薄膜上，这样可有效避免非晶硅中大量的材料缺陷对电子的复合作用，提高了光电流强度。
本发明的叠层太阳能电池的制备工艺与现有工艺兼容极好，制备时仅需调整工艺步骤就可以实现，无需新的设备投资，开发成本低。
附图说明
图1是本发明的硅基埋栅叠层太阳能电池的结构示意图。
图2是现有单结多晶硅太阳能电池的结构示意图。
图3是本发明太阳电池和单结多晶硅太阳能电池的光谱响应。
图4是太阳光谱。
图5是本发明太阳电池和单结多晶硅太阳能电池的电压与波长关系的曲线图。
图6是本发明太阳电池光谱响应与α-si薄膜厚度的关系。
具体实施方式
对照图1，本实施例的硅基埋栅叠层太阳能电池主要由一顶电极2、一底电极6、P型非晶硅1、多晶硅衬底中P型区3和多晶硅衬底中N型区5组成。其中的P型非晶硅1由P型非晶硅薄膜形成，该非晶硅薄膜的禁带宽度大致为1.7ev。P型多晶硅3由多晶硅衬底中掺杂P型杂质形成，该多晶硅的禁带宽度大致为1.1ev。多晶硅衬底中P型区连接在N型多晶硅5上，在P型多晶硅3与N型多晶硅5之间构成一个PN结4。顶电极2连接在P型多晶硅上端面的衬底上，非晶硅薄膜覆盖连接在P型多晶硅3和顶电极2上，在P型非晶硅1与P型多晶硅3之间构成一个同型异质结7。底电极6连接在N型多晶硅5的下端面。
上述的硅基叠层太阳能电池可用现有的太阳能电池的制备设备进行制作，工艺过程大致如下：
1)利用多晶硅衬底制备PN结电池；
2)淀积铝顶电极，与P型多晶硅形成欧姆接触；
3)淀积P型非晶硅层，与P型多晶硅形成同型异质结；
4)制备底电极，形成叠层太阳能电池。
本发明的叠层太阳能电池利用顶层宽禁带的非晶硅薄膜作光吸收层，并与多晶硅衬底构成异质结电池。同时利用底层窄禁带的多晶硅作光吸收层，在多晶硅中形成PN结作为底电池。它与普通叠层电池不同的结构设计是在于：顶电池与底电池共用一个P型多晶硅层。这样可减少一个电池间的界面，避免了电池间界面对于电流的复合作用，提高了电池效率，可以使叠层太阳能电池的光电转换效率比单结多晶硅电池提高5～10％。将顶电极设置在P型多晶硅层与P型非晶硅层之间，与多晶硅形成欧姆接触，可有效避免非晶硅中大量的材料缺陷对电子的复合作用，提高了光电流强度。本发明通过SILVACO软件的仿真实验验证，具有较佳的光电性能，SILVACO软件仿真结果为IEEE(美国电气和电子工程师协会)所认可。下面是具体的实施例。
实施例1，电池光谱响应仿真试验。
该试验的结果请参见图3，从图3可以看出，两种电池的光谱响应变化趋势相同，都是在300～850nm波段随着波长的增加而增加，到850nm以后光谱响应强度迅速下降。从光谱响应变化趋势上看，本发明太阳能电池吸收太阳能量的主要部分还是在多晶硅衬底中。在850nm出现光谱响应峰值与多晶硅的禁带宽度有关，即此波长与多晶硅禁带宽度相当。
本发明电池在整个光谱区的响应强度较单结多晶硅太阳能电池有所增强，特别是在400-600nm波段及850nm以后波段。通过对整个光谱响应的积分可以看出，本发明电池的光谱响应比单结多晶硅太阳能电池增强约5％。这表明本发明电池中的非晶硅层可以有效的提高多晶硅电池的光谱响应。这是因为本发明电池含有两种硅材料，而该两种硅材料的禁带宽度的差异，在非晶硅与多晶硅之间形成了一个PP同型异质结。根据异质结的“窗口效应”，宽禁带的非晶硅可以提高禁带较窄的多晶硅衬底对光的吸收，因此从图3中可以看出，本发明电池整体光谱响应增强，在850nm以后表现特别明显。同时，由于非晶硅薄膜的禁带宽度比多晶硅的禁带宽度大，其光谱吸收限位于400-600nm波段，因此在400-600nm波段，本发明电池的光谱响应也增强。图4为太阳能量光谱分布图，在400-600nm波段，太阳光能量最强，这说明本发明的电池在该波段能很好地适应太阳能的能量光谱，可以改善多晶硅电池在400～600nm波段的光谱响应，从而提高光电转化效率。
实施例2，开路电压仿真实验。
该试验的结果请参见图5，在300～850nm波段，本发明电池的开路电压与单结多晶硅电池基本一致，且都随着波长的增加而增加。但在850nm波段，本发明电池的电压较单结多晶硅电池有较大的提高。这是因为从电池结构上，两种电池的电极都是淀积在多晶硅上，所以开路电压在850nm以前变化不大，但在长波段的光谱响应比单结多晶硅电池强，所以，本发明的电池在长波段的电压比单结多晶硅电池强。
实施例3，α-si薄膜厚度对电池光谱响应的影响
该试验的结果请参见图6，图6中所示为α-si薄膜厚度分别0.01、0.1、0.5、1μm及多晶硅电池的光谱响应。从图中可以看出随着α-si(非晶硅)薄膜厚度的增加，在300-850nm波段光谱响应强度逐步下降，在850nm波长以后，随着薄膜厚度的增加，光谱响应逐步增强。这说明，随着厚度的增加，较短波长的入射光被薄膜自身所吸收，导致到达衬底的光强有所减弱，光谱响应随着薄膜厚度的增加而减小。但是，由于长波不能被禁带宽度较宽的薄膜所吸收，导致多晶硅衬底对长波的吸收增加，从而光谱响应随着薄膜厚度的增加而增加。在短波段薄膜厚度对电压的影响不大，但在长波段电压变化较为明显这应与随着厚度的增加，薄膜对长波光谱响应增强有关。

Claims (3)

1. 一种硅基叠层太阳能电池，包括一顶电极、一底电极、P型多晶硅和N型多晶硅，其特征在于还包括一层P型非晶硅，所述P型多晶硅连接在所述N型多晶硅上，在P型多晶硅与N型多晶硅之间构成一个PN结，所述顶电极和所述底电极分别连接在P型多晶硅上表面和N型多晶硅下表面，所述P型非晶硅通过淀积覆盖在P型多晶硅及顶电极上，使顶电极位于P型非晶硅与P型多晶硅之间，P型非晶硅与P型多晶硅之间构成一个同型异质结。
2. 据权利要求1所述的一种硅基叠层太阳能电池，其特征在于所述一层P型非晶硅由P型非晶硅薄膜形成，该非晶硅薄膜的禁带宽度大致在为1.7ev。
3. 根据权利要求1所述的一种硅基叠层太阳能电池，其特征在于所述P型多晶硅衬底的禁带宽度大致为1.lev。
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