CN102115326B - Doped modified SrZrO3-based middle-high pressure ceramic porcelain capacitor material - Google Patents
Doped modified SrZrO3-based middle-high pressure ceramic porcelain capacitor material Download PDFInfo
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- CN102115326B CN102115326B CN 201010603040 CN201010603040A CN102115326B CN 102115326 B CN102115326 B CN 102115326B CN 201010603040 CN201010603040 CN 201010603040 CN 201010603040 A CN201010603040 A CN 201010603040A CN 102115326 B CN102115326 B CN 102115326B
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- srzro3
- capacitor material
- ceramic capacitor
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Abstract
The invention provides a doped modified SrZrO3-based middle-high voltage ceramic capacitor material, in particular to a middle-high voltage ceramic capacitor material doped with modified SrZrO3 and prepared from the following components in percentage by weight: 60-64 percent of SrZrO3, 20-24 percent of SrTiO3, 4-8 percent of MnO2, 8-10 percent of Dy2O3 and 8-12 percent of CaZrO3. The sum of each component is 100 percentage. The SrZrO3, the SrTiO3, the MnO2, the Dy2O3 and the CaZrO3 are mixed according to a formula ratio and polyvinyl alcohol is added to press and mold. The middle-high voltage ceramic capacitor material doped with modified SrZrO3 is obtained by sintering in a temperature range between 1250 DEG C to 1400 DEG C. By adopting the prescription, the dielectric constant of the economical middle-high voltage ceramic capacitor material doped with modified SrZrO3 can be increased to 12,800, the withstand voltage is increased to 19KV/mm and the temperature characteristics is Y5U.
Description
Technical field
The present invention relates to a kind of capacitance material, especially the higfh-tension ceramics capacitance material.
Background technology
And present high-voltage capacitance majority is the cost height, dielectric constant is low, and is lower in withstand voltage operating temperature range, and rate of temperature change is too high when high temperature, can not satisfy the demand that in oscillation circuit, compensates the requirement of positive temperature coefficient and satisfy the electronic circuit miniaturization, and loss value is excessive.
Summary of the invention
Purpose of the present invention provides a kind of economy, the higfh-tension ceramics capacitance material of dielectric constant.
Doping vario-property strontium zirconate base mesohigh ceramic capacitor material is characterized in that by strontium zirconate SrZrO
360-64%, strontium titanates SrTiO
320～24%, manganese dioxide MnO
24～8%, dysprosia Dy
2O
38-10%, calcium zirconate CaZrO
3The high-pressure porcelain capacitor material that 8-12% forms.
Adopt this prescription, just can make the dielectric constant increase of capacitance material is 12800, withstand voltage 19KV/mm, and temperature characterisitic is Y5U, economical mesohigh ceramic capacitor material.
Embodiment
During concrete enforcement, we are with strontium zirconate SrZrO
3, strontium titanates SrTiO
3, manganese dioxide MnO
2, dysprosia Dy
2O
3, calcium zirconate CaZrO
3Press formula rate and mix the compression moulding of back adding polyvinyl alcohol, sintering obtains this prescription ceramic condenser in 1250 to 1400 degrees centigrade of scopes then.
When proportioning, we are with strontium zirconate SrZrO
3, strontium titanates SrTiO
3, manganese dioxide MnO
2, dysprosia Dy
2O
3, calcium zirconate CaZrO
3Mix according to the proportioning stirring ball-milling, dilute with small amount of acetone, high-speed stirred (7000r/min) 20min fully disperses inorganic material, and the polyvinyl alcohol of adding 8% carries out mist projection granulating, place 130 ℃ of baking oven 1h then, just can obtain the capacitor of this prescription, it is 12800 that the dielectric constant of its capacitance material increases, withstand voltage 19KV/mm, temperature characterisitic is Y5U, economical mesohigh ceramic capacitor material.
Claims (1)
1. doping vario-property strontium zirconate base mesohigh ceramic capacitor material is characterized in that by strontium zirconate SrZrO
360-64%, strontium titanates SrTiO
320～24%, manganese dioxide MnO
24～8%, dysprosia Dy
2O
38-10%, calcium zirconate CaZrO
3The doping vario-property strontium zirconate base mesohigh ceramic capacitor material that 8-12% forms, above-mentioned each component sum is 100%, with strontium zirconate SrZrO
3, strontium titanates SrTiO
3, manganese dioxide MnO
2, dysprosia Dy
2O
3, calcium zirconate CaZrO
3Press formula rate and mix the compression moulding of back adding polyvinyl alcohol, sintering obtains doping vario-property strontium zirconate base mesohigh ceramic capacitor material in 1250 to 1400 degrees centigrade of scopes then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010603040 CN102115326B (en) | 2010-12-24 | 2010-12-24 | Doped modified SrZrO3-based middle-high pressure ceramic porcelain capacitor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010603040 CN102115326B (en) | 2010-12-24 | 2010-12-24 | Doped modified SrZrO3-based middle-high pressure ceramic porcelain capacitor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102115326A CN102115326A (en) | 2011-07-06 |
| CN102115326B true CN102115326B (en) | 2013-08-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010603040 Expired - Fee Related CN102115326B (en) | 2010-12-24 | 2010-12-24 | Doped modified SrZrO3-based middle-high pressure ceramic porcelain capacitor material |
Country Status (1)
| Country | Link |
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| CN (1) | CN102115326B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106565214A (en) * | 2016-10-26 | 2017-04-19 | 安徽飞达电气科技有限公司 | High-performance high-voltage capacitor ceramic material and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0865052A2 (en) * | 1997-02-25 | 1998-09-16 | TDK Corporation | High dielectric-constant ceramic composition, and its fabrication process |
| CN1287547A (en) * | 1998-09-30 | 2001-03-14 | Tdk株式会社 | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| CN1889211A (en) * | 2006-07-17 | 2007-01-03 | 钱云春 | Barium titanate Y5U capacity material formula |
| CN101320604A (en) * | 2008-07-04 | 2008-12-10 | 北京工业大学 | SrZrO3 doped YBCO thin film and preparation method thereof |
| CN101759432A (en) * | 2009-12-28 | 2010-06-30 | 钱云春 | Barium titanate-based lead-free high-voltage ceramic capacitor material |
-
2010
- 2010-12-24 CN CN 201010603040 patent/CN102115326B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0865052A2 (en) * | 1997-02-25 | 1998-09-16 | TDK Corporation | High dielectric-constant ceramic composition, and its fabrication process |
| CN1287547A (en) * | 1998-09-30 | 2001-03-14 | Tdk株式会社 | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| CN1889211A (en) * | 2006-07-17 | 2007-01-03 | 钱云春 | Barium titanate Y5U capacity material formula |
| CN101320604A (en) * | 2008-07-04 | 2008-12-10 | 北京工业大学 | SrZrO3 doped YBCO thin film and preparation method thereof |
| CN101759432A (en) * | 2009-12-28 | 2010-06-30 | 钱云春 | Barium titanate-based lead-free high-voltage ceramic capacitor material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102115326A (en) | 2011-07-06 |
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Owner name: WUJIANG HUACHENG COMPOSITE TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: QIAN YUNCHUN Effective date: 20130909 |
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Effective date of registration: 20130909 Address after: Wujiang District of Suzhou City, Jiangsu Province, Wu Road No. 22 215200 Patentee after: Wujiang Huacheng Composite Technology Co., Ltd. Address before: Split eight 215200 Jiangsu city in Wujiang Province town of Suzhou as the Exxon Elevator Parts Technology Co. Ltd. Patentee before: Qian Yunchun |
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