CN102103867B - 连续介质垂直磁记录盘及其制造方法 - Google Patents
连续介质垂直磁记录盘及其制造方法 Download PDFInfo
- Publication number
- CN102103867B CN102103867B CN201010587476.1A CN201010587476A CN102103867B CN 102103867 B CN102103867 B CN 102103867B CN 201010587476 A CN201010587476 A CN 201010587476A CN 102103867 B CN102103867 B CN 102103867B
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic recording
- perpendicular magnetic
- middle layer
- nucleation site
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 89
- 230000006911 nucleation Effects 0.000 claims abstract description 66
- 238000010899 nucleation Methods 0.000 claims abstract description 66
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 37
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229920001400 block copolymer Polymers 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 23
- 230000000737 periodic effect Effects 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 19
- 239000002086 nanomaterial Substances 0.000 claims description 16
- 239000002159 nanocrystal Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000005294 ferromagnetic effect Effects 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910000929 Ru alloy Inorganic materials 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910005335 FePt Inorganic materials 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- 230000035699 permeability Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000001127 nanoimprint lithography Methods 0.000 abstract description 4
- 239000006185 dispersion Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 74
- 239000010408 film Substances 0.000 description 33
- 229920001577 copolymer Polymers 0.000 description 16
- 239000013078 crystal Substances 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 7
- 238000005204 segregation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000001338 self-assembly Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000005977 Ethylene Substances 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 238000003618 dip coating Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 3
- 239000002120 nanofilm Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- -1 FeAlSi Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 150000004032 porphyrins Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017150 AlTi Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910005435 FeTaN Inorganic materials 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229920000359 diblock copolymer Polymers 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/639,975 | 2009-12-16 | ||
US12/639,975 US8048546B2 (en) | 2009-12-16 | 2009-12-16 | Perpendicular magnetic recording disk with ordered nucleation layer and method for making the disk |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102103867A CN102103867A (zh) | 2011-06-22 |
CN102103867B true CN102103867B (zh) | 2016-03-09 |
Family
ID=44143288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010587476.1A Active CN102103867B (zh) | 2009-12-16 | 2010-12-13 | 连续介质垂直磁记录盘及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8048546B2 (zh) |
JP (1) | JP2011129241A (zh) |
CN (1) | CN102103867B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709533B2 (en) * | 2010-09-09 | 2014-04-29 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing bit patterned media |
US8628867B2 (en) * | 2010-09-30 | 2014-01-14 | Seagate Technology Llc | Patterned template with 1xN nucleation site to grain growth for uniform grain size recording media |
US8758912B2 (en) * | 2011-09-16 | 2014-06-24 | WD Media, LLC | Interlayers for magnetic recording media |
CN103065646B (zh) * | 2011-10-24 | 2014-12-10 | 江苏海纳纳米技术开发有限公司 | 铁铂纳米团簇磁记录媒体 |
US8920948B2 (en) * | 2011-12-31 | 2014-12-30 | HGST Netherlands B.V. | Substrate patterning in perpendicular storage media |
WO2014031772A1 (en) * | 2012-08-21 | 2014-02-27 | Regents Of The University Of Minnesota | Embedded mask patterning process for fabricating magnetic media and other structures |
US20140093747A1 (en) * | 2012-09-28 | 2014-04-03 | HGST Netherlands B.V. | Magnetic recording medium with anti-ferromagnetically coupled magnetic layers |
US8926851B2 (en) | 2012-11-18 | 2015-01-06 | HGST Netherlands B.V. | Method for making a film of uniformly arranged core-shell nanoparticles on a substrate |
US8821736B1 (en) | 2013-02-20 | 2014-09-02 | HGST Netherlands B.V. | Method for making a perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material |
US9236076B2 (en) * | 2013-02-20 | 2016-01-12 | HGST Netherlands B.V. | Perpendicular magnetic recording disk with template layer formed of nanoparticles embedded in a polymer material |
US9183867B1 (en) * | 2013-02-21 | 2015-11-10 | WD Media, LLC | Systems and methods for forming implanted capping layers in magnetic media for magnetic recording |
US9548073B1 (en) * | 2013-03-13 | 2017-01-17 | WD Media, LLC | Systems and methods for providing high performance soft magnetic underlayers for magnetic recording media |
US20140370331A1 (en) * | 2013-06-18 | 2014-12-18 | Seagate Technology Llc | Method of fabricating ion implantation magnetically and thermally isolated bits in hamr bpm stacks |
JP5904981B2 (ja) * | 2013-09-09 | 2016-04-20 | 株式会社東芝 | パターン形成方法、磁気記録媒体の製造方法、及び磁気記録媒体 |
US10026431B2 (en) * | 2013-11-01 | 2018-07-17 | Carnegie Mellon University | Magnetic shift register |
JP2015109118A (ja) * | 2013-12-03 | 2015-06-11 | 株式会社東芝 | 垂直磁気記録媒体 |
US9224412B2 (en) | 2014-01-31 | 2015-12-29 | HGST Netherlands B.V. | Perpendicular magnetic recording disk with template layer formed of a blend of nanoparticles |
US20150248909A1 (en) | 2014-02-28 | 2015-09-03 | HGST Netherlands B.V. | Structure with seed layer for controlling grain growth and crystallographic orientation |
US9159350B1 (en) | 2014-07-02 | 2015-10-13 | WD Media, LLC | High damping cap layer for magnetic recording media |
JP2016051487A (ja) * | 2014-08-29 | 2016-04-11 | 株式会社東芝 | 磁気記録媒体、磁気記録媒体の製造方法、磁気記録再生装置 |
US9431046B2 (en) | 2014-10-31 | 2016-08-30 | HGST Netherlands B.V. | Perpendicular magnetic recording disk with patterned template layer |
US9966096B2 (en) | 2014-11-18 | 2018-05-08 | Western Digital Technologies, Inc. | Self-assembled nanoparticles with polymeric and/or oligomeric ligands |
JP6475963B2 (ja) * | 2014-12-05 | 2019-02-27 | 東京応化工業株式会社 | 下地剤組成物及び相分離構造を含む構造体の製造方法 |
US9697857B1 (en) * | 2015-05-29 | 2017-07-04 | Seagate Technology Llc | Three dimensional data storage media |
US10347467B2 (en) | 2015-08-21 | 2019-07-09 | Regents Of The University Of Minnesota | Embedded mask patterning process for fabricating magnetic media and other structures |
SG11202009585QA (en) * | 2018-03-28 | 2020-10-29 | Jx Nippon Mining & Metals Corp | Perpendicular magnetic recording medium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101025936A (zh) * | 2006-02-15 | 2007-08-29 | 日立环球储存科技荷兰有限公司 | 制造垂直磁记录盘的方法 |
CN101159139A (zh) * | 2006-10-04 | 2008-04-09 | 三星电子株式会社 | 磁记录介质及其制造方法 |
CN101369429A (zh) * | 2007-05-01 | 2009-02-18 | 日立环球储存科技荷兰有限公司 | 垂直磁记录介质及方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0836743A (ja) * | 1994-07-26 | 1996-02-06 | Fujitsu Ltd | 磁気記録媒体及びその製造方法 |
EP0780833A3 (en) * | 1995-12-20 | 1999-01-07 | Ampex Corporation | Improved magnetic recording system having a saturable layer and detection using MR element |
JP2002170227A (ja) | 2000-12-04 | 2002-06-14 | Fujitsu Ltd | 高密度磁気記録媒体 |
JP3934889B2 (ja) * | 2001-07-02 | 2007-06-20 | Tdk株式会社 | 磁気記録媒体およびその製造方法 |
JP2003317222A (ja) | 2002-04-19 | 2003-11-07 | Hitachi Ltd | 記録媒体 |
JP4762485B2 (ja) * | 2003-05-14 | 2011-08-31 | 昭和電工株式会社 | 垂直磁気記録媒体 |
US7175925B2 (en) * | 2003-06-03 | 2007-02-13 | Seagate Technology Llc | Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same |
JP2005276365A (ja) * | 2004-03-25 | 2005-10-06 | Toshiba Corp | グラニュラ薄膜、垂直磁気記録媒体および磁気記録再生装置 |
JP2006031849A (ja) * | 2004-07-16 | 2006-02-02 | Toshiba Corp | 磁気記録媒体の製造方法、磁気記録媒体および磁気ディスク装置 |
JP3926360B2 (ja) * | 2004-10-13 | 2007-06-06 | 株式会社東芝 | パターン形成方法およびそれを用いた構造体の加工方法 |
US7820064B2 (en) * | 2005-05-10 | 2010-10-26 | The Regents Of The University Of California | Spinodally patterned nanostructures |
JP4681938B2 (ja) * | 2005-05-24 | 2011-05-11 | キヤノン株式会社 | ナノ構造体の製造方法 |
US7491452B2 (en) * | 2005-08-12 | 2009-02-17 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with recording layer containing selected metal oxides and formed on a reduced-thickness exchange-break layer |
US7347953B2 (en) * | 2006-02-02 | 2008-03-25 | International Business Machines Corporation | Methods for forming improved self-assembled patterns of block copolymers |
JP2007299491A (ja) * | 2006-05-02 | 2007-11-15 | Canon Inc | 磁気記録媒体の製造方法 |
US20080090106A1 (en) * | 2006-10-13 | 2008-04-17 | David Braunstein | Soft underlayer for perpendicular media with mechanical stability and corrosion resistance |
JP4853293B2 (ja) | 2007-01-10 | 2012-01-11 | 富士電機株式会社 | パターンドメディアの製造方法 |
JP2008204539A (ja) * | 2007-02-20 | 2008-09-04 | Fujitsu Ltd | 垂直磁気記録媒体およびその製造方法、磁気記録装置 |
JP5184843B2 (ja) * | 2007-08-21 | 2013-04-17 | エイチジーエスティーネザーランドビーブイ | 垂直磁気記録媒体及び磁気記憶装置 |
JP5397926B2 (ja) * | 2007-08-31 | 2014-01-22 | 昭和電工株式会社 | 垂直磁気記録媒体、その製造方法および磁気記録再生装置 |
US7776388B2 (en) * | 2007-09-05 | 2010-08-17 | Hitachi Global Storage Technologies Netherlands, B.V. | Fabricating magnetic recording media on patterned seed layers |
JP2009070540A (ja) * | 2007-09-12 | 2009-04-02 | Samsung Electronics Co Ltd | 垂直磁気記録媒体及びその製造方法 |
JP4381444B2 (ja) * | 2007-11-22 | 2009-12-09 | 株式会社東芝 | 磁気記録媒体、磁気記録媒体の製造方法、および磁気記録装置 |
JP2009211781A (ja) * | 2008-03-05 | 2009-09-17 | Fujitsu Ltd | 垂直磁気記録媒体の製造方法 |
-
2009
- 2009-12-16 US US12/639,975 patent/US8048546B2/en active Active
-
2010
- 2010-12-03 JP JP2010270905A patent/JP2011129241A/ja active Pending
- 2010-12-13 CN CN201010587476.1A patent/CN102103867B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101025936A (zh) * | 2006-02-15 | 2007-08-29 | 日立环球储存科技荷兰有限公司 | 制造垂直磁记录盘的方法 |
CN101159139A (zh) * | 2006-10-04 | 2008-04-09 | 三星电子株式会社 | 磁记录介质及其制造方法 |
CN101369429A (zh) * | 2007-05-01 | 2009-02-18 | 日立环球储存科技荷兰有限公司 | 垂直磁记录介质及方法 |
Also Published As
Publication number | Publication date |
---|---|
US20110143169A1 (en) | 2011-06-16 |
CN102103867A (zh) | 2011-06-22 |
US8048546B2 (en) | 2011-11-01 |
JP2011129241A (ja) | 2011-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102103867B (zh) | 连续介质垂直磁记录盘及其制造方法 | |
US7670696B2 (en) | Perpendicular magnetic recording medium with patterned magnetic islands and nonmagnetic trenches and manufacturing method for suppressing surface diffusion of trench material | |
US8021769B2 (en) | Patterned perpendicular magnetic recording medium with exchange coupled recording layer structure and magnetic recording system using the medium | |
CN1326121C (zh) | 磁记录介质及其制造方法 | |
US8399051B1 (en) | Method for making a patterned perpendicular magnetic recording disk having a FePt or CoPt chemically ordered recording layer | |
US7732071B2 (en) | Perpendicular magnetic recording system with patterned medium and manufacturing process for the medium | |
US8268461B1 (en) | Patterned perpendicular magnetic recording medium with ultrathin oxide film and reduced switching field distribution | |
JP4381444B2 (ja) | 磁気記録媒体、磁気記録媒体の製造方法、および磁気記録装置 | |
US20180226096A1 (en) | Self-assembled nanoparticles with polymeric and/or oligomeric ligands | |
US9464348B2 (en) | Method for making a patterned perpendicular magnetic recording disk using glancing angle deposition of hard mask material | |
CN104821174A (zh) | 具有由纳米粒子混合物形成的模板层的垂直磁记录磁盘 | |
US20130319850A1 (en) | Nanoimprint lithography method for making a bit-patterned media magnetic recording disk using imprint resist with enlarged feature size | |
US20100326819A1 (en) | Method for making a patterned perpendicular magnetic recording disk | |
US20100119778A1 (en) | Ultra thin alignment walls for di-block copolymer | |
US8748018B2 (en) | Patterned perpendicular magnetic recording medium with data islands having a flux channeling layer below the recording layer | |
US9147423B2 (en) | Method for improving a patterned perpendicular magnetic recording disk with annealing | |
US9183865B1 (en) | Patterned perpendicular magnetic recording medium with ultrathin noble metal interlayer | |
CN104700850A (zh) | 垂直磁记录介质和垂直磁记录介质的制造方法 | |
Kikitsu et al. | Nano-patterned medium fabricated by the artificially aligned self-assembling method | |
US20120082865A1 (en) | Method for forming a magnetic recording medium and a magnetic recording medium formed thereof | |
Mullin et al. | Work in progress: Introduction to engineering ethics through student skits in the freshman engineering program at Virginia Tech |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Amsterdam Applicant after: Hitachi Global Storage Technologies Netherlands B. V. Address before: Amsterdam Applicant before: Hitachi Global Storage Tech |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: HITACHI GLOBAL STORAGE TECH TO: HGST NETHERLANDS BV |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190125 Address after: American California Patentee after: Western Digital Technologies, Inc. Address before: Amsterdam Patentee before: Hitachi Global Storage Technologies Netherlands B. V. |