CN102082016B - Positive temperature coefficient thermistor and preparation method thereof - Google Patents
Positive temperature coefficient thermistor and preparation method thereof Download PDFInfo
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- CN102082016B CN102082016B CN200910224834XA CN200910224834A CN102082016B CN 102082016 B CN102082016 B CN 102082016B CN 200910224834X A CN200910224834X A CN 200910224834XA CN 200910224834 A CN200910224834 A CN 200910224834A CN 102082016 B CN102082016 B CN 102082016B
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Abstract
The invention provides a positive temperature coefficient thermistor and a preparation method thereof. The positive temperature coefficient thermistor comprises a substrate (1), an electrode layer (2), an electrode connecting piece (3) and a non-conducting sealing piece (4), wherein the electrode layer (2) covers on two opposite surfaces of the substrate (1); the electrode connecting piece (3) is electrically connected with the electrode layer (2); the non-conducting sealing piece (4) covers on the other surfaces of the substrate (1), or wraps the substrate (1) and the electrode layer (2), at least part of the electrode connecting piece (3) are not covered by the non-conducting sealing piece (4); and the substrate (1) comprises a porous substrate body and an inorganic salt solution, the inorganic salt solution is absorbed in pores of the porous substrate body, and the air permeability of the porous substrate body is 3.5-6.5m<2>.cm/(m<2>.h.mm H2O). The positive temperature coefficient thermistor conducts electricity by means of ion migration, thus a good positive temperature coefficient effect can be generated.
Description
Technical field
The present invention relates to the preparation method of a kind of positive temperature coefficient (PTC) thermistor and said positive temperature coefficient (PTC) thermistor.
Background technology
The people such as Haayman of nineteen fifty Holland PHILIPS Co. are to BaTiO
3Mix in the material when rare earth element is done the semiconducting test and find that the resistance of this material can significantly increase (PTC (positive temperature coefficient) effect) with the rising of temperature.From then on, begun the research and development of aspect such as Exploration on mechanism, material preparation, application, till now, developed about 60 years this phenomenon.Along with development and national economy, the PTC thermistor element is widely used in fields such as household electrical appliances, communication, electronic equipment, electric component, TEMP and control, heating.
At present the PTC thermistor have demagnetization with PTC themistor, motor starting with PTC themistor, overcurrent protection with PTC themistor, heat with PTC thermistor, chip PTC thermistor.
Existing P TC thermistor is sorted out by material can be divided into BaTiO
3Be PTC thermistor, V
2O
3Be PTC thermistor and high score subclass PTC thermistor.Concrete, BaTiO
3Be the PTC thermistor, the raw material that in PTC thermistor production process, uses comprises: principal crystalline phase raw material such as BaTiO
3, TiO
2, BaTiO
3, Curie point moves agent such as SrCO
3-PbO-Pb
3O
4, SrTiO
3-PbTiO
3, semiconducting material such as Y
2O
3, Nb
2O
5, receive main admixture such as Mn (NO
3)
2, sintering aid such as SiO
2, Al
2O
3, TiO
2V
2O
3Be in the PTC thermistor, the material prescription of having reported comprises (V
0.995Cr
0.0025Al
0.0025)
2O
3Fe with 10 weight %; Macromolecular PTC thermistor is composited by polymer and electric conducting material by U.S. Raychem company initiative, and said polymer plays skeleton and filling carrier effect, and said electric conducting material plays the current channel effect.
CN1655290A discloses a kind of macromolecular positive temperature coefficient thermosensitive resistor; This thermistor is made up of macromolecule substrate and the pellet electrode that is compound in the substrate two sides, the insulating barrier that is welded in electrode surface lead-in wire shape electrode and is encapsulated in outer surface, and it is characterized in that: the original composition and the parts by weight of substrate are following:
Polymer 40-65,
Conductive filler 30-60,
Processing aid 0.2-10,
Said polymer is homopolymers or copolymer; Comprise one or more mixtures with arbitrary proportion in polyethylene, polypropylene, ethylene propylene copolymer, ethylene acrylic acid co polymer and the acrylic acid, said conductive filler is one or more in nickel powder, copper powder or the carbon black, and said processing aid comprises antioxidant and coupling agent; The weight ratio of antioxidant and coupling agent is 1: 1.5-2.5; Wherein, antioxidant is acrylic acid alkoxide compound, and coupling agent is titanate esters or silane compound.PTC thermistor in the said patent application carries out electrical conductivity through conductive filler to be realized conducting electricity.
CN 1647217A discloses a kind of PTC thermistor, has at least: with the pair of electrodes of state configuration opposite one another be disposed between the said pair of electrodes and have the thermistor prime field of positive resistance-temperature characteristics, wherein,
Said thermistor prime field is by polymer matrix, low-molecular-weight organic compound and has the formed body that the conductive particle of electronic conductivity constitutes;
The molecular weight of said polymer matrix is 10000-400000;
The molecular weight of said low-molecular-weight organic compound is 100-3000;
Said polymer matrix is to have the olefines macromolecular compound that 85-95 ℃ fusion begins temperature.PTC thermistor in the said patent application carries out electrical conductivity through conductive particle to be realized conducting electricity.
Summary of the invention
The purpose of this invention is to provide a kind of new PTC thermistor, said PTC thermistor is realized conduction through the ion migration, and said PTC thermistor can produce good PTC effect.
Another object of the present invention provides a kind of preparation method of PTC thermistor.
Inventor of the present invention has significant PTC effect after being surprised to find that and making porous material absorption soluble inorganic salt solution; And; After the porous substrates body that will be adsorbed with soluble inorganic salt solution was assembled into the PTC thermistor, the thermistor that obtains had good PTC effect.The inventor finds through the research back; The PTC thermistor that the porous substrates body that employing is adsorbed with soluble inorganic salt solution is processed as substrate conducts electricity through the ion migration, with existing completely different with the operation principle of the PTC thermistor of realizing conduction through electrical conductivity.
The invention provides a kind of semistor; Wherein, Said semistor comprises substrate, electrode layer, electrode connecting parts and non-conductive seal; Said electrode layer covers on two facing surfaces of said substrate, and said electrode connecting parts is electrically connected with said electrode layer, and said non-conductive seal covers on other surface of said substrate; Perhaps said substrate and electrode layer are coated, and make at least that the said electrode connecting parts of part is not coated by said non-conductive seal; Said substrate comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body, and the air permeability of said porous substrates body is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).
The present invention also provides a kind of preparation method of PTC thermistor; Wherein, Said method comprises electrode layer is covered on two relative faces of substrate, and electrode connecting parts is electrically connected on the said electrode layer, then non-conductive seal is covered on other face of said substrate; Perhaps said substrate and said electrode layer are coated, and make at least that the said electrode connecting parts of part is not coated by said non-conductive seal; Said substrate comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body, and the air permeability of said porous substrates body is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).
Learn that through the experiment detection PTC thermistor provided by the invention has good PTC effect.
Description of drawings
Fig. 1 representes the structural representation of PTC thermistor provided by the invention;
Fig. 2 a representes the front view of embodiment 1 and 2 prepared PTC thermistors;
Fig. 2 b representes the vertical view of embodiment 1 and 2 prepared PTC thermistors;
Fig. 3 a representes the front view of embodiment 3 prepared PTC thermistors;
Fig. 3 b representes the vertical view of embodiment 3 prepared PTC thermistors;
Fig. 4 representes according to resistance that records in the test case and the prepared resistance-temperature profile of temperature data.
Embodiment
PTC thermistor provided by the invention comprises substrate 1, electrode layer 2, electrode connecting parts 3 and non-conductive seal 4; Said electrode layer 2 covers on two facing surfaces of said substrate 1; Said electrode connecting parts 3 is electrically connected with said electrode layer 2; Said non-conductive seal 4 covers on other surface of said substrate 1, perhaps said substrate 1 and electrode layer 2 is coated, and makes at least that the said electrode connecting parts 3 of part is not coated by said non-conductive seal 4.
In said PTC thermistor, said substrate 1 comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body.In said substrate 1, the water in said porous substrates body, the said inorganic salt solution and the weight ratio of the inorganic salts in the said inorganic salt solution can be 50-2000: 2-100: 1, be preferably 100-800: 5-50: 1.
In the present invention; Said inorganic salts do not have special qualification in the present invention yet; As long as can be water-soluble and ionization go out ion; Under the preferable case, said inorganic salts are the inorganic salts more than the 5g/L for solubility in water, for example can be for being selected from least a in potassium chloride, sodium chloride, calcium chloride, magnesium chloride, copper chloride, potassium nitrate, sodium nitrate, magnesium nitrate, copper nitrate, nickel nitrate, potassium sulfate, sodium sulphate, calcium sulfate, magnesium sulfate, the copper sulphate.
In said PTC thermistor, the air permeability of the said porous substrates body in the said substrate 1 is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).In the present invention, said air permeability is meant at room temperature, when pressure differential is the 1mm water column, is 1m with laminar condition through the thick 1cm of being, area in 1 hour
2The air capacity (m of said porous substrates body
3).Said air permeability can adopt the conventional various air permeability checkout gears that use in this area to detect and obtain, and the DTQ porous ceramic air permeability appearance that for example can adopt Xiangtan City instrument and meter Co., Ltd to produce detects and obtains.In said substrate 1; The porosity of said porous substrates body and average pore diameter are not special to be limited, as long as the gas permeability of the said porous substrates body of assurance is within above-mentioned scope, under the preferable case; The porosity of said porous substrates body can be 25-75%, is preferably 30-65%; The average pore diameter of said porous substrates body can be the 1-500 micron, is preferably the 2-65 micron.Said porosity is meant that the volume of hole accounts for the percentage of said porous substrates body cumulative volume.
In the present invention, said porous substrates body can be for mainly containing the sheet material of porous material, and the content of said porous material is more than the 95 weight % of said porous substrates body total weight, is preferably 96-99.999 weight %.The kind of said porous material does not have special qualification in the present invention; Can be the conventional various porous materials that use of those skilled in the art, for example can be for being selected from least a in aluminium oxide, zirconia, talcum, kaolin, quartz, alumina, cordierite, mullite, magnesia, sepiolite, medical stone, flint clay, the clay.
In order to improve the electric conductivity of the PTC thermistor that finally makes, said substrate 1 preferably also contains conductive auxiliary agent.The content of said conductive auxiliary agent in said substrate 1 does not have special qualification, under the preferable case, is benchmark with the total weight of said porous substrates body, and the content of said conductive auxiliary agent is 0.001-4 weight %, and the content of said porous material is 96-99.999 weight %.The kind of said conductive auxiliary agent does not have special qualification in the present invention yet; Can be the conventional various conductive auxiliary agents that use of those skilled in the art; For example can be selected from least a in metal material, carbon series conductive material, the conducting ceramic material; Concrete, said metal material can be the metal dust of various routines, said metal can be the metal of various routines; For example can be gold, silver, copper, iron, aluminium, nickel, zinc, magnesium, molybdenum, the particle diameter of said metal dust can be the 1-65 micron; Said carbon series conductive material can be in graphite, carbon black, the acetylene black at least a, what said conducting ceramic material can be in titanium carbide, titanium nitride, the tungsten carbide is at least a.
In the present invention, the thickness of said substrate 1 does not have special qualification, and is concrete, and the thickness of said substrate 1 can suitably be selected according to the thickness of the PTC thermistor that finally makes, and generally, the thickness of said substrate 1 can be the 0.2-5 millimeter.
Said electrode layer 2 can be the conductivity rete of various routines metallic diaphragm for example, as long as said metallic diaphragm can closely contact with said substrate, said metallic diaphragm most preferably is silver film.Said silver film can be starched through silver coated on said substrate 1, thereby realizes closely contacting with said substrate.Said silver-colored slurry can use Japanese Japan product 5660NS.In the present invention, the thickness of said electrode layer 2 does not have special qualification, can be the 0.05-0.2 millimeter usually.
Said electrode connecting parts 3 can be the metalwork of wire or sheet usually, and said metal can be for being selected from the alloy of a kind of metal or multiple metal in the group of being made up of gold, silver, copper, iron, aluminium, nickel, zinc, magnesium, molybdenum.
Said non-conductive seal 4 can be processed by the various non-conductive encapsulant of routine; Under the preferable case; Said non-conductive encapsulant can be the dielectric thermosetting resin and/or the thermoplastic resin of various routines; Said dielectric thermosetting resin can be in epoxy resin, phenolic resins, alkyd resins, the organic siliconresin at least a, what said dielectric thermoplastic resin can be in nylon, terylene, polyvinyl chloride, polytetrafluoroethylene, Kynoar, Merlon, polybutylene terephthalate (PBT), polyimides, the ABS engineering resin is at least a.The thickness of said non-conductive seal 4 does not have special qualification, can be the 0.01-2 millimeter usually.
In the present invention; The shape of said PTC thermistor does not have special qualification; For example can be the disk inserter structure shown in Fig. 2 a and 2b, wherein, substrate, electrode layer and non-conductive encapsulant etc. form the disk shape; One end of electrode connecting parts 3 is connected with disk, and said electrode connecting parts 3 can be straight or crooked wire metalwork; Also can be the banded formula structure of the disk shown in Fig. 3 a and 3b, wherein, substrate, electrode layer and non-conductive encapsulant etc. form the disk shape, and an end of electrode connecting parts 3 is connected with disk, and said electrode connecting parts 3 can be the metalwork of sheet.
The present invention also provides a kind of preparation method of PTC thermistor; Wherein, Said method comprises electrode layer 2 is covered on two relative faces of substrate 1, and electrode connecting parts 3 is electrically connected on the said electrode layer 2, then non-conductive seal 4 is covered on other face of said substrate 1; Perhaps said substrate 1 and said electrode layer 2 are coated, and make at least that the said electrode connecting parts of part is not coated by said non-conductive seal 4; Said substrate 1 comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body, and the air permeability of said porous substrates body is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).
In said substrate 1, the water in said porous substrates body, the said inorganic salt solution and the weight ratio of the inorganic salts in the said inorganic salt solution can be 50-2000: 2-100: 1, be preferably 100-800: 5-50: 1.
In said method provided by the invention; The formation method of said substrate 1 and said electrode layer 2 can adopt the conventional method of those skilled in the art to implement; For example said method can be included on two relative faces of said porous substrates body and form electrode layer; Carry out sintering then, the porous substrates body that obtains behind the sintering is immersed in the said inorganic salt solution, thereby said inorganic salt solution is adsorbed onto in the hole of said porous substrates body.
The method that on two of said porous substrates body relative faces, forms electrode layer 2 can adopt the method for various routines to implement; For example can be through the slurry of silver coated on two of said porous substrates body relative faces; Carry out sintering then, thereby on two of said porous substrates body relative faces, form silver film.Said silver-colored slurry can adopt Japanese Japan product 5660NS.The thickness of said electrode layer 2 does not have special qualification, can be the 0.05-0.2 millimeter usually.The method of said sintering can adopt the conventional method of using in this area to implement, and the temperature of said sintering can be 600-900 ℃.
In the present invention, said porous substrates body can be for mainly containing the sheet material of porous material, and the content of said porous material is more than the 95 weight % of said porous substrates body total weight, is preferably 96-99.999 weight %.The formation method of said porous substrates body does not have special qualification in the present invention, can adopt the conventional method of using in this area to form.For example can be through said porous material is processed slurry, the gained slurry is added to carries out moulding in the mould, carry out sintering then, the shape such as the sheet material that afterwards the material that obtains behind the sintering are polished into requirement get final product.Adopting the prepared porous substrates body of said method to have air permeability is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water); Satisfying on the basis of above-mentioned air permeability; The porosity of said porous substrates body and average pore diameter do not have special qualification; The porosity of common said porous substrates body can be 25-75%, is preferably 30-65%; The average pore diameter of said porous substrates body can be the 1-500 micron, is preferably the 2-65 micron.Said porosity is meant that the volume of hole accounts for the percentage of said porous substrates body cumulative volume.
The thickness of said substrate 1 does not have special qualification, and is concrete, and the thickness of said substrate 1 can suitably be selected according to the thickness of the PTC thermistor that finally makes, and generally, the thickness of said substrate 1 can be the 0.2-5 millimeter.
Said porous material can be the conventional various porous materials that use of those skilled in the art, for example can be for being selected from least a in aluminium oxide, zirconia, talcum, kaolin, quartz, alumina, cordierite, mullite, magnesia, sepiolite, medical stone, flint clay, the clay; Said porous material also can be provided by the material that can form above-mentioned porous material down at 800-1300 ℃, and for example, aluminium hydroxide can form aluminium oxide under 800-1300 ℃.
Said inorganic salts do not have special qualification in the present invention yet; As long as can be water-soluble and ionization go out ion; Under the preferable case; Said inorganic salts are the inorganic salts more than the 5g/L for solubility in water, for example can be for being selected from least a in potassium chloride, sodium chloride, calcium chloride, magnesium chloride, copper chloride, potassium nitrate, sodium nitrate, magnesium nitrate, copper nitrate, nickel nitrate, potassium sulfate, sodium sulphate, calcium sulfate, magnesium sulfate, the copper sulphate.
Said conductive auxiliary agent can be the conventional various conductive auxiliary agents that use of those skilled in the art; For example can be selected from least a in metal material, carbon series conductive material, the conducting ceramic material; Concrete, said metal material can be the metal dust of various routines, said metal can be the metal of various routines; For example can be gold, silver, copper, iron, aluminium, nickel, zinc, magnesium, molybdenum, the particle diameter of said metal dust can be the 1-65 micron; Said carbon series conductive material can be in graphite, carbon black, the acetylene black at least a, what said conducting ceramic material can be in titanium carbide, titanium nitride, the tungsten carbide is at least a.Said conductive auxiliary agent can also be provided by the material that can form metal material down at 600-900 ℃, and for example, the compound of silver such as silver nitrate, silver chlorate can form silver under 800-1300 ℃.In said substrate 1, with respect to the said porous material of 100 weight portions, the content of said conductive agent can be the 0.01-5 weight portion, is preferably the 0.05-2 weight portion.
In said method provided by the invention, the method that said electrode connecting parts 3 is connected with said electrode layer 2 can comprise said electrode connecting parts 3 is welded on the said electrode layer 2.The method of said welding does not have special qualification in the present invention, can adopt the conventional the whole bag of tricks that uses of those skilled in the art to implement, and for example can adopt the method for soldering.
Said electrode connecting parts 3 can be the metalwork of wire or sheet usually, and said metal can be for being selected from the alloy of a kind of metal or multiple metal in the group of being made up of gold, silver, copper, iron, aluminium, nickel, zinc, magnesium, molybdenum.
In said method provided by the invention; Said non-conductive seal 4 is processed by non-conductive encapsulant; Said non-conductive encapsulant can be the dielectric thermosetting resin and/or the thermoplastic resin of various routines; Said dielectric thermosetting resin can be in epoxy resin, phenolic resins, alkyd resins, the organic siliconresin at least a, what said dielectric thermoplastic resin can be in nylon, terylene, polyvinyl chloride, polytetrafluoroethylene, Kynoar, Merlon, polybutylene terephthalate (PBT), polyimides, the ABS engineering resin is at least a.In this, the thickness of said non-conductive seal 4 does not have special qualification, can be the 0.01-2 millimeter usually.
When said non-conductive encapsulant is at least a in thermosetting resin such as epoxy resin, phenolic resins, alkyd resins and the organic siliconresin; The formation method of said non-conductive seal 4 can comprise said non-conductive encapsulant said other face attached to said substrate 1; Perhaps on the face of said other face of said substrate 1 and said electrode layer 2; Then said non-conductive sexual type encapsulant is heated to curing temperature; Said curing temperature is to make the temperature of said non-conductive encapsulant generation cross-linking reaction with the solid-state material of generation HMW, and said curing temperature can be 120-200 ℃ usually.With said non-conductive encapsulant said other face attached to said substrate 1, the method on said other face of perhaps said substrate 1 and the face of said electrode layer 2 can make said thermosetting resin apply with the form of the slurries mode through spraying, coating or roller coating.In the slurries of said non-conductive encapsulant, the content of said non-conductive encapsulant can be 70-85 weight %.
At said non-conductive encapsulant is at least a in thermoplastic resin such as nylon, terylene, polyvinyl chloride, polytetrafluoroethylene, Kynoar, Merlon, polybutylene terephthalate (PBT), polyimides, the ABS engineering resin; And the formation method of said non-conductive seal 4 comprises that the mode through injection mo(u)lding covers said non-conductive encapsulant on said other surface of said substrate 1, perhaps covers on the face of said other face and said electrode layer 2 of said substrate 1.The method of said injection mo(u)lding and condition have been conventionally known to one of skill in the art, repeat no more at this.Under preferable case; After adopting said thermoplastic resin injection mo(u)lding; Can adopt thermosetting resin to seal, said thermosetting resin can be the thermosetting resin of various routines, for example can be in epoxy resin, phenolic resins, alkyd resins and the organic siliconresin at least a.
Below through embodiment the present invention is done further detailed explanation.
Present embodiment is used to explain said PTC thermistor provided by the invention and preparation method thereof.
The water of the graphite of the alumina powder of the flint clay of the alumina of the talcum powder of 40 weight portions, 20 weight portions, 20 weight portions, 8 parts by weight of clay, 12 weight portions, 1 weight portion and 30 weight portions is placed on mixes in the ball mill and grind; Obtain the slurry of particle diameter less than 50 μ m; Then through the frothing machine deaeration and pour die for molding into; Putting into sintering furnace then handled 24 hours at 1300 ℃ of following constant temperature; Reducing to and the material behind the sintering being polished into diameter after the room temperature is that 10mm, thickness are the porous substrates body (porosity is 60%, and average pore diameter is 10 microns) of 1mm.Through DTQ porous ceramic air permeability appearance (producing) by Xiangtan City instrument and meter Co., Ltd detect the gas permeability of learning said porous substrates body be 5.5 cubic metres centimetres/(square metre hour millimeter of water).
The upper and lower surface of gained porous substrates body brush the silver slurry (Japanese Japan product, 5660NS), 200 ℃ dry 15 minutes down, 800 ℃ of following sintering 10 minutes, have the porous substrates body that thickness is the silver film of 0.1mm then thereby obtain upper and lower surface.
The said porous substrates body that is formed with silver film, concentration was soaked 10 minutes in being the Klorvess Liquid of 25.48 weight %; Take out then and at room temperature placed 5 minutes, learn the Klorvess Liquid that has adsorbed 1.5 weight portions in the said porous substrates body through weighing before and after soaking.
Then; Adopt the method for soldering that two copper electrode lead-in wires are welded to respectively on the said silver film, epoxy resin (Tianjin Kaihua Insulation Materials Co., Ltd.'s product, model are EF-150C (the F)) slurries that will contain 75 weight % are afterwards brushed on the side of said substrate and on the silver film; And make said copper electrode lead-in wire not adhere to the slurries that contain epoxy resin; Be heated to 140 ℃ then, and under temperature, kept 5 minutes, make epoxy resin generation cross-linking reaction and curing; On other face except that being coated with silver film of said silver film and said substrate, forming thickness is 0.1 millimeter rete, thereby obtains the PTC thermistor A1 shown in Fig. 2 a and 2b.
Present embodiment is used to explain said PTC thermistor provided by the invention and preparation method thereof.
The water of the titanium carbide of the quartz of the medical stone of the sepiolite of the kaolin of 50 weight portions, 20 weight portions, 20 weight portions, 10 weight portions, 0.1 weight portion and 30 weight portions is placed on mixes in the ball mill and grind; Obtain the slurry of particle diameter less than 50 μ m; Then through the frothing machine deaeration and pour die for molding into; Putting into sintering furnace then handled 24 hours at 1300 ℃ of following constant temperature; Reducing to and the material behind the sintering being polished into diameter after the room temperature is that 10mm, thickness are the porous substrates body (porosity is 70%, and average pore diameter is 30 microns) of 2mm.Through DTQ porous ceramic air permeability appearance (producing) by Xiangtan City instrument and meter Co., Ltd detect the gas permeability of learning said porous substrates body be 5.0 cubic metres centimetres/(square metre hour millimeter of water).
The upper and lower surface of gained porous substrates body brush the silver slurry (Japanese Japan product, 5660NS), 200 ℃ dry 15 minutes down, 800 ℃ of following sintering 10 minutes, have the porous substrates body that thickness is the silver film of 0.1mm then thereby obtain upper and lower surface.
The said porous substrates body that is formed with silver film, concentration was soaked 10 minutes in being the nickel nitrate solution of 18.4 weight %; Take out then and at room temperature placed 5 minutes, learn the nickel nitrate solution that adsorbed 2 weight portions in the said porous substrates body (with respect to the weight of the porous material of 100 weight portions) through weighing before and after soaking.
Then; Adopt the method for soldering that two aluminium contact conductors are welded to respectively on the said silver film; Phenolic resins (the continent Electron Material Co., Ltd product that will contain 80 weight % afterwards; Model is GIN-COAT DP-430WH) slurries be sprayed on the side of said substrate with silver film on, and make said copper electrode lead-in wire not adhere to the slurries that contain phenolic resins, be heated to 140 ℃ then; And under temperature, kept 10 minutes; Make epoxy resin generation cross-linking reaction and curing, forming thickness from other face except that being coated with silver film at said silver film and said substrate is 0.2 millimeter rete, thereby obtains the PTC thermistor A2 shown in Fig. 2 a and 2b.
Present embodiment is used to explain said PTC thermistor provided by the invention and preparation method thereof.
The water of the titanium nitride of the quartz of the flint clay of the talcum powder of the zirconia of 30 weight portions, 40 weight portions, 20 weight portions, 10 weight portions, 3 weight portions and 30 weight portions is placed on mixes in the ball mill and grind; Obtain the slurry of particle diameter less than 50 μ m; Then through the frothing machine deaeration and pour die for molding into; Putting into sintering furnace then handled 24 hours at 1300 ℃ of following constant temperature; Reducing to and the material behind the sintering being polished into diameter after the room temperature is that 10mm, thickness are the porous substrates body (porosity is 65%, and average pore diameter is 20 microns) of 3mm.Through DTQ porous ceramic air permeability appearance (producing) by Xiangtan City instrument and meter Co., Ltd detect the gas permeability of learning said porous substrates body be 4.0 cubic metres centimetres/(square metre hour millimeter of water).
The upper and lower surface of gained porous substrates body brush the silver slurry (Japanese Japan product, 5660NS), 200 ℃ dry 15 minutes down, 800 ℃ of following sintering 10 minutes, have the porous substrates body that thickness is the silver film of 0.1mm then thereby obtain upper and lower surface.
The said porous substrates body that is formed with silver film, concentration was soaked 10 minutes in being the potassium nitrate solution of 23.1 weight %; Take out then and at room temperature placed 5 minutes, learn the potassium nitrate solution that adsorbed 1 weight portion in the said porous substrates body (with respect to the weight of the porous material of 100 weight portions) through weighing before and after soaking.
Then, the method that adopts soldering is that 5 millimeters copper electrode sheet is welded to respectively on the said silver film with two width, and the substrate that will be coated with silver film afterwards and on said silver film, be connected with the copper electrode sheet is placed in the mould; And make two copper electrode sheets on the silver film stretch out mould; Nylon 66 (du pont company product, model are PA66) is injected in the said mould, and the condition of said injection moulding comprises: nozzle temperature is 285 ℃; Be 1 second inject time; Thereby covering one layer thickness is 0.5 millimeter a polyimides rete on other face except that being coated with silver film of said silver film and said substrate, and the slurries that will contain epoxy resin (Tianjin Kaihua Insulation Materials Co., Ltd.'s product, model are EF-150C (F)) then are coated in said polyimide film layer interface place; And under 140 ℃, heated 10 minutes; Make said epoxy resin generation cross-linking reaction and curing, thereby said interface is sealed, obtain the PTC thermistor A3 shown in Fig. 3 a and 3b.
Test case
The PTC effect of the PTC thermistor A1-A3 that makes among the test implementation example 1-3.
Adopt Agilent data collecting instrument 34970A to gather the resistance-temperature data of PTC thermistor.Concrete, A1-A3 puts into baking oven respectively with the PTC thermistor, is connected with data collecting instrument, and the speed with 10 ℃/min heats up then, the resistance parameter of test PTC thermistor, and make resistance-temperature curve as shown in Figure 4 respectively.
Can find out that according to Fig. 4 PTC thermistor A1-A3 resistance when being warming up to more than 90 ℃ raises rapidly, all shows good PTC effect.
This shows that PTC thermistor provided by the invention can produce good PTC effect.
Claims (16)
1. semistor; It is characterized in that; Said semistor comprises substrate (1), electrode layer (2), electrode connecting parts (3) and non-conductive seal (4); Said electrode layer (2) covers on two relative faces of said substrate (1), and said electrode connecting parts (3) is electrically connected with said electrode layer (2), and said non-conductive seal (4) covers on other face of said substrate (1); Perhaps said substrate (1) and electrode layer (2) are coated, and make at least that the said electrode connecting parts of part (3) is not coated by said non-conductive seal (4); Said substrate (1) comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body, and the air permeability of said porous substrates body is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).
2. semistor according to claim 1, wherein, in said substrate (1), the water in said porous substrates body, the said inorganic salt solution and the weight ratio of the inorganic salts in the said inorganic salt solution are 50-2000: 2-100: 1.
3. semistor according to claim 1 and 2; Wherein, said inorganic salts are selected from least a in potassium chloride, sodium chloride, calcium chloride, magnesium chloride, copper chloride, potassium nitrate, sodium nitrate, magnesium nitrate, copper nitrate, nickel nitrate, potassium sulfate, sodium sulphate, calcium sulfate, magnesium sulfate, the copper sulphate.
4. semistor according to claim 1; Wherein, Said porous substrates body contains porous material; And the content of said porous material is more than the 95 weight % of said porous substrates body total weight, and said porous material is selected from least a in aluminium oxide, zirconia, talcum, kaolin, quartz, alumina, cordierite, mullite, magnesia, sepiolite, medical stone, flint clay, the clay.
5. according to claim 1,2 or 4 described semistors, wherein, the porosity of said porous substrates body is 25-75%, and average pore diameter is the 1-500 micron.
6. semistor according to claim 4; Wherein, Said porous substrates body also contains conductive auxiliary agent, and said conductive auxiliary agent is dispersed in the said porous material, and is benchmark with the total weight of said porous substrates body; The content of said conductive auxiliary agent is 0.001-4 weight %, and the content of said porous material is 96-99.999 weight %.
7. semistor according to claim 6, wherein, said conductive auxiliary agent is selected from least a in metal material, carbon series conductive material, the conducting ceramic material.
8. semistor according to claim 1, wherein, the thickness of said substrate (1) is the 0.2-5 millimeter; The thickness of said electrode layer (2) is the 0.05-0.2 millimeter.
9. semistor according to claim 1; Wherein, Said electrode connecting parts (3) is the metalwork of wire or sheet, and said metal is the alloy that is selected from a kind of metal or multiple metal in the group of being made up of gold, silver, copper, iron, aluminium, nickel, zinc, magnesium, molybdenum.
10. semistor according to claim 1; Wherein, Said non-conductive seal (4) is processed by non-conductive encapsulant; Said non-conductive encapsulant is to be selected from least a in epoxy resin, phenolic resins, alkyd resins, the organic siliconresin, perhaps for being selected from least a in nylon, terylene, polyvinyl chloride, polytetrafluoroethylene, Kynoar, Merlon, polybutylene terephthalate (PBT), polyimides, the ABS engineering resin.
11. the preparation method of a semistor; It is characterized in that; Said method comprises electrode layer (2) is covered on two relative faces of substrate (1), and electrode connecting parts (3) is electrically connected on the said electrode layer (2), then non-conductive seal (4) is covered on other face of said substrate (1); Perhaps said substrate (1) and said electrode layer (2) are coated, and make at least that the said electrode connecting parts of part is not coated by said non-conductive seal (4); Said substrate (1) comprises porous substrates body and inorganic salt solution, and said inorganic salt solution is adsorbed in the hole of said porous substrates body, and the gas permeability of said porous substrates body is that air permeability is 3.5-6.5 cubic meter centimetre/(square metre hour millimeter of water).
12. method according to claim 11, wherein, in said substrate (1), the water in said porous substrates body, the said inorganic salt solution and the weight ratio of the inorganic salts in the said inorganic salt solution are 50-2000: 2-100: 1.
13. method according to claim 11; Wherein, The formation method of said substrate (1) and said electrode layer (2) is included on two relative faces of porous substrates body and forms electrode layer, carries out sintering then, and the porous substrates body that obtains behind the sintering is immersed in the said inorganic salt solution.
14. method according to claim 11, wherein, the method that said electrode connecting parts (3) is connected with said electrode layer (2) comprises said electrode connecting parts (3) is welded on the said electrode layer (2).
15. method according to claim 11; Wherein, Said non-conductive seal (4) is processed by non-conductive encapsulant; Said non-conductive encapsulant is at least a in epoxy resin, phenolic resins, alkyd resins and the organic siliconresin; And the formation method of said non-conductive seal (4) comprises said non-conductive encapsulant said other face attached to said substrate (1); Perhaps on the face of said other face of said substrate (1) and said electrode layer (2), then said non-conductive sexual type encapsulant is heated to curing temperature, said curing temperature is to make the temperature of said non-conductive encapsulant generation cross-linking reaction with the solid-state material that generates HMW.
16. method according to claim 11; Wherein, Said non-conductive seal (4) is processed by non-conductive encapsulant; Said non-conductive encapsulant is at least a in nylon, terylene, polyvinyl chloride, polytetrafluoroethylene, Kynoar, Merlon, polybutylene terephthalate (PBT), polyimides, the ABS engineering resin; And the formation method of said non-conductive seal (4) comprises that the mode through injection mo(u)lding covers said non-conductive encapsulant on said other face of said substrate (1), perhaps covers on the face of said other face and said electrode layer (2) of said substrate (1).
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| CN103304947B (en) * | 2013-05-24 | 2016-03-02 | 安邦电气集团有限公司 | Anti-oxidant PTC polymer heating material and preparation method thereof |
| CN107607216A (en) * | 2017-09-25 | 2018-01-19 | 南京航伽电子科技有限公司 | A kind of temperature transmitter with good compensation performance |
| CN108753056A (en) * | 2018-05-18 | 2018-11-06 | 蚌埠心里程电子科技有限公司 | A kind of infrared radiation coating containing cordierite |
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| CN1655290A (en) * | 2005-02-24 | 2005-08-17 | 深圳市固派电子有限公司 | Macromolecular positive temperature coefficient thermosensitive resistor and method for making same |
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| CN1655290A (en) * | 2005-02-24 | 2005-08-17 | 深圳市固派电子有限公司 | Macromolecular positive temperature coefficient thermosensitive resistor and method for making same |
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