CN102067316A - 具有背侧沟槽的背侧照射式图像传感器 - Google Patents
具有背侧沟槽的背侧照射式图像传感器 Download PDFInfo
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- CN102067316A CN102067316A CN2009801231369A CN200980123136A CN102067316A CN 102067316 A CN102067316 A CN 102067316A CN 2009801231369 A CN2009801231369 A CN 2009801231369A CN 200980123136 A CN200980123136 A CN 200980123136A CN 102067316 A CN102067316 A CN 102067316A
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- 238000003384 imaging method Methods 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 239000007943 implant Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 159
- 235000012431 wafers Nutrition 0.000 claims description 102
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- 238000002513 implantation Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 16
- 238000002161 passivation Methods 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 2
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/169,810 US20100006908A1 (en) | 2008-07-09 | 2008-07-09 | Backside illuminated image sensor with shallow backside trench for photodiode isolation |
US12/169,810 | 2008-07-09 | ||
PCT/US2009/003977 WO2010027395A2 (en) | 2008-07-09 | 2009-07-07 | Backside illuminated image sensor with backside trenches |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102067316A true CN102067316A (zh) | 2011-05-18 |
CN102067316B CN102067316B (zh) | 2013-05-01 |
Family
ID=41504361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801231369A Active CN102067316B (zh) | 2008-07-09 | 2009-07-07 | 具有背侧沟槽的背侧照射式图像传感器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20100006908A1 (zh) |
EP (1) | EP2311091B1 (zh) |
JP (1) | JP5420656B2 (zh) |
KR (1) | KR101341048B1 (zh) |
CN (1) | CN102067316B (zh) |
TW (1) | TWI452684B (zh) |
WO (1) | WO2010027395A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108346673A (zh) * | 2017-01-23 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | 一种背照式图像传感器及其制造方法和电子装置 |
CN108470741A (zh) * | 2018-03-16 | 2018-08-31 | 昆山锐芯微电子有限公司 | 图像传感器及其形成方法 |
CN110783356A (zh) * | 2019-11-05 | 2020-02-11 | 昆山锐芯微电子有限公司 | 时间延迟积分图像传感器及其形成方法 |
CN112415075A (zh) * | 2019-08-21 | 2021-02-26 | 生命技术公司 | 包含多通道流动池的装置 |
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US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
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US7916362B2 (en) * | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
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US8896712B2 (en) * | 2007-07-20 | 2014-11-25 | Omnivision Technologies, Inc. | Determining and correcting for imaging device motion during an exposure |
US8350952B2 (en) * | 2008-06-04 | 2013-01-08 | Omnivision Technologies, Inc. | Image sensors with improved angle response |
US7859033B2 (en) | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
US7915067B2 (en) * | 2008-07-09 | 2011-03-29 | Eastman Kodak Company | Backside illuminated image sensor with reduced dark current |
US8017426B2 (en) * | 2008-07-09 | 2011-09-13 | Omnivision Technologies, Inc. | Color filter array alignment mark formation in backside illuminated image sensors |
US8224082B2 (en) * | 2009-03-10 | 2012-07-17 | Omnivision Technologies, Inc. | CFA image with synthetic panchromatic image |
US8068153B2 (en) * | 2009-03-27 | 2011-11-29 | Omnivision Technologies, Inc. | Producing full-color image using CFA image |
US8045024B2 (en) * | 2009-04-15 | 2011-10-25 | Omnivision Technologies, Inc. | Producing full-color image with reduced motion blur |
US8674469B2 (en) * | 2009-04-23 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structure for backside illuminated image sensor |
US8460979B2 (en) * | 2009-04-27 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a backside illuminated image sensor |
US8203633B2 (en) * | 2009-05-27 | 2012-06-19 | Omnivision Technologies, Inc. | Four-channel color filter array pattern |
US8237831B2 (en) * | 2009-05-28 | 2012-08-07 | Omnivision Technologies, Inc. | Four-channel color filter array interpolation |
US8125546B2 (en) * | 2009-06-05 | 2012-02-28 | Omnivision Technologies, Inc. | Color filter array pattern having four-channels |
US8253832B2 (en) * | 2009-06-09 | 2012-08-28 | Omnivision Technologies, Inc. | Interpolation for four-channel color filter array |
JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
US8389377B2 (en) | 2010-04-02 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensor element isolation in a backside illuminated image sensor |
KR101803719B1 (ko) * | 2010-10-26 | 2017-12-04 | 삼성전자 주식회사 | 후면 조사형 액티브 픽셀 센서 어레이 및 그 제조 방법, 이를 구비하는 후면 조사형 이미지 센서 |
US8308379B2 (en) | 2010-12-01 | 2012-11-13 | Digitaloptics Corporation | Three-pole tilt control system for camera module |
FR2976119A1 (fr) | 2011-06-06 | 2012-12-07 | St Microelectronics Crolles 2 | Procede de fabrication d'un dispositif d'imagerie a illumination face arriere, et dispositif correspondant |
WO2013062687A1 (en) * | 2011-10-28 | 2013-05-02 | Intevac, Inc. | Backside-thinned image sensor using a12o3 surface passivation |
US9099389B2 (en) * | 2012-02-10 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing stripe patterns |
US9029759B2 (en) * | 2012-04-12 | 2015-05-12 | Nan Chang O-Film Optoelectronics Technology Ltd | Compact camera modules with features for reducing Z-height and facilitating lens alignment and methods for manufacturing the same |
US9001268B2 (en) | 2012-08-10 | 2015-04-07 | Nan Chang O-Film Optoelectronics Technology Ltd | Auto-focus camera module with flexible printed circuit extension |
US9287308B2 (en) | 2013-04-08 | 2016-03-15 | Omnivision Technologies, Inc. | Image sensor having metal contact coupled through a contact etch stop layer with an isolation region |
KR102268714B1 (ko) | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
KR102340346B1 (ko) * | 2014-08-26 | 2021-12-16 | 삼성전자주식회사 | 칼라 필터 어레이 및 그 제조 방법 및 이를 포함하는 이미지 센서 |
US9484370B2 (en) | 2014-10-27 | 2016-11-01 | Omnivision Technologies, Inc. | Isolated global shutter pixel storage structure |
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FR3074962A1 (fr) * | 2017-12-08 | 2019-06-14 | Stmicroelectronics (Crolles 2) Sas | Dispositif electronique capteur d'images |
US10432883B1 (en) * | 2018-06-12 | 2019-10-01 | Semiconductor Components Industries, Llc | Backside illuminated global shutter pixels |
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US8017426B2 (en) * | 2008-07-09 | 2011-09-13 | Omnivision Technologies, Inc. | Color filter array alignment mark formation in backside illuminated image sensors |
KR20110034930A (ko) * | 2009-09-29 | 2011-04-06 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
-
2008
- 2008-07-09 US US12/169,810 patent/US20100006908A1/en not_active Abandoned
-
2009
- 2009-07-07 JP JP2011517413A patent/JP5420656B2/ja active Active
- 2009-07-07 KR KR1020117003045A patent/KR101341048B1/ko active IP Right Grant
- 2009-07-07 EP EP09796848.1A patent/EP2311091B1/en active Active
- 2009-07-07 WO PCT/US2009/003977 patent/WO2010027395A2/en active Application Filing
- 2009-07-07 CN CN2009801231369A patent/CN102067316B/zh active Active
- 2009-07-08 TW TW098123129A patent/TWI452684B/zh active
-
2010
- 2010-11-11 US US12/944,268 patent/US8076170B2/en active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108346673A (zh) * | 2017-01-23 | 2018-07-31 | 中芯国际集成电路制造(上海)有限公司 | 一种背照式图像传感器及其制造方法和电子装置 |
CN108346673B (zh) * | 2017-01-23 | 2021-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种背照式图像传感器及其制造方法和电子装置 |
CN108470741A (zh) * | 2018-03-16 | 2018-08-31 | 昆山锐芯微电子有限公司 | 图像传感器及其形成方法 |
CN112415075A (zh) * | 2019-08-21 | 2021-02-26 | 生命技术公司 | 包含多通道流动池的装置 |
CN110783356A (zh) * | 2019-11-05 | 2020-02-11 | 昆山锐芯微电子有限公司 | 时间延迟积分图像传感器及其形成方法 |
CN110783356B (zh) * | 2019-11-05 | 2022-09-02 | 锐芯微电子股份有限公司 | 时间延迟积分图像传感器及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5420656B2 (ja) | 2014-02-19 |
US8076170B2 (en) | 2011-12-13 |
CN102067316B (zh) | 2013-05-01 |
KR20110030670A (ko) | 2011-03-23 |
TWI452684B (zh) | 2014-09-11 |
US20110059572A1 (en) | 2011-03-10 |
WO2010027395A2 (en) | 2010-03-11 |
EP2311091B1 (en) | 2016-11-23 |
EP2311091A2 (en) | 2011-04-20 |
JP2011527829A (ja) | 2011-11-04 |
US20100006908A1 (en) | 2010-01-14 |
WO2010027395A3 (en) | 2010-05-14 |
KR101341048B1 (ko) | 2013-12-12 |
TW201010071A (en) | 2010-03-01 |
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