CN101176208A - 具有抗模糊隔离的彩色像素和形成方法 - Google Patents
具有抗模糊隔离的彩色像素和形成方法 Download PDFInfo
- Publication number
- CN101176208A CN101176208A CNA2006800168256A CN200680016825A CN101176208A CN 101176208 A CN101176208 A CN 101176208A CN A2006800168256 A CNA2006800168256 A CN A2006800168256A CN 200680016825 A CN200680016825 A CN 200680016825A CN 101176208 A CN101176208 A CN 101176208A
- Authority
- CN
- China
- Prior art keywords
- region
- conduction type
- imaging device
- electric charge
- epitaxial loayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 41
- 238000002955 isolation Methods 0.000 title abstract description 3
- 230000015572 biosynthetic process Effects 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002513 implantation Methods 0.000 claims description 97
- 238000003384 imaging method Methods 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 22
- 241001062009 Indigofera Species 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 5
- 210000001364 upper extremity Anatomy 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 abstract description 14
- 238000012545 processing Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 241000220010 Rhode Species 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000036755 cellular response Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000011221 initial treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (63)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/129,462 | 2005-05-16 | ||
US11/129,462 US20060255372A1 (en) | 2005-05-16 | 2005-05-16 | Color pixels with anti-blooming isolation and method of formation |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101176208A true CN101176208A (zh) | 2008-05-07 |
Family
ID=36939184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006800168256A Pending CN101176208A (zh) | 2005-05-16 | 2006-05-12 | 具有抗模糊隔离的彩色像素和形成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060255372A1 (zh) |
EP (1) | EP1883968A1 (zh) |
JP (1) | JP2008546176A (zh) |
KR (1) | KR20080019231A (zh) |
CN (1) | CN101176208A (zh) |
TW (1) | TW200735341A (zh) |
WO (1) | WO2006124701A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101675523B (zh) * | 2007-03-01 | 2012-06-20 | 郑苍隆 | 具有像素间隔离结构的位置相关移转的图像传感器 |
CN103811512A (zh) * | 2014-03-17 | 2014-05-21 | 北京思比科微电子技术股份有限公司 | 一种防止图像弥散的图像传感器像素结构及其制造方法 |
CN106241725A (zh) * | 2015-06-05 | 2016-12-21 | 豪威科技股份有限公司 | Rgb‑ir光传感器阵列、接收图像及检测彩色图像的方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442974B2 (en) * | 2006-01-31 | 2008-10-28 | Hiok Nam Tay | Image sensor with inter-pixel isolation |
US7799491B2 (en) * | 2006-04-07 | 2010-09-21 | Aptina Imaging Corp. | Color filter array and imaging device containing such color filter array and method of fabrication |
US7605440B2 (en) * | 2006-04-07 | 2009-10-20 | Aptina Imaging Corporation | Pixel cell isolation of charge storage and floating diffusion regions using doped wells |
US7965444B2 (en) * | 2006-08-31 | 2011-06-21 | Micron Technology, Inc. | Method and apparatus to improve filter characteristics of optical filters |
US20080204580A1 (en) * | 2007-02-28 | 2008-08-28 | Micron Technology, Inc. | Method, apparatus and system providing imaging device with color filter array |
US7821046B2 (en) | 2007-04-27 | 2010-10-26 | Aptina Imaging Corporation | Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels |
US20090108385A1 (en) * | 2007-10-29 | 2009-04-30 | Micron Technology, Inc. | Method and apparatus for improving crosstalk and sensitivity in an imager |
KR20090071067A (ko) * | 2007-12-27 | 2009-07-01 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
JP2011258903A (ja) * | 2010-06-11 | 2011-12-22 | Panasonic Corp | 固体撮像素子 |
KR102013789B1 (ko) * | 2012-07-06 | 2019-08-26 | 에스케이하이닉스 주식회사 | 씨모스 이미지센서 및 그 제조 방법 |
US9029972B2 (en) | 2012-09-25 | 2015-05-12 | Semiconductor Components Industries, Llc | Image sensors with in-pixel anti-blooming drains |
US9159753B2 (en) | 2013-03-01 | 2015-10-13 | Semiconductor Components Industries, Llc | Image sensor pixels with self-aligned lateral anti-blooming structures |
US9287313B2 (en) * | 2013-03-12 | 2016-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Active pixel sensor having a raised source/drain |
US9070802B2 (en) * | 2013-08-16 | 2015-06-30 | Himax Imaging, Inc. | Image sensor and fabricating method of image sensor |
US9673194B2 (en) * | 2013-10-31 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and formation thereof |
US9613916B2 (en) * | 2015-03-12 | 2017-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protection ring for image sensors |
TWI548075B (zh) * | 2015-05-28 | 2016-09-01 | 力晶科技股份有限公司 | 影像感測器及其製作方法 |
US12015862B2 (en) * | 2018-05-24 | 2024-06-18 | Gigajot Technology, Inc. | Image sensor having pixels with isolated floating diffusions |
US10332732B1 (en) * | 2018-06-01 | 2019-06-25 | Eagle Technology, Llc | Image intensifier with stray particle shield |
US20220310685A1 (en) * | 2021-03-24 | 2022-09-29 | Artilux, Inc. | Photo-detecting apparatus |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62296554A (ja) * | 1986-06-17 | 1987-12-23 | Matsushita Electronics Corp | 固体撮像装置 |
US5122850A (en) * | 1989-09-05 | 1992-06-16 | Eastman Kodak Company | Blooming control and reduced image lag in interline transfer CCD area image sensors |
JPH09331058A (ja) * | 1996-06-13 | 1997-12-22 | Sony Corp | 固体撮像素子 |
FR2820883B1 (fr) * | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
US6639204B1 (en) * | 2001-07-06 | 2003-10-28 | Pictos Technologies, Inc. | Solid state color imager and method of manufacture |
US6756616B2 (en) * | 2001-08-30 | 2004-06-29 | Micron Technology, Inc. | CMOS imager and method of formation |
KR100450670B1 (ko) * | 2002-02-09 | 2004-10-01 | 삼성전자주식회사 | 포토 다이오드를 갖는 이미지 센서 및 그 제조방법 |
US6744084B2 (en) * | 2002-08-29 | 2004-06-01 | Micro Technology, Inc. | Two-transistor pixel with buried reset channel and method of formation |
KR20040036087A (ko) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법 |
KR100485892B1 (ko) * | 2002-11-14 | 2005-04-29 | 매그나칩 반도체 유한회사 | 시모스 이미지센서 및 그 제조방법 |
US7087944B2 (en) * | 2003-01-16 | 2006-08-08 | Micron Technology, Inc. | Image sensor having a charge storage region provided within an implant region |
US6897082B2 (en) * | 2003-06-16 | 2005-05-24 | Micron Technology, Inc. | Method of forming well for CMOS imager |
-
2005
- 2005-05-16 US US11/129,462 patent/US20060255372A1/en not_active Abandoned
-
2006
- 2006-05-12 EP EP06770318A patent/EP1883968A1/en not_active Withdrawn
- 2006-05-12 CN CNA2006800168256A patent/CN101176208A/zh active Pending
- 2006-05-12 WO PCT/US2006/018595 patent/WO2006124701A1/en active Application Filing
- 2006-05-12 KR KR1020077029347A patent/KR20080019231A/ko not_active Application Discontinuation
- 2006-05-12 JP JP2008512384A patent/JP2008546176A/ja not_active Withdrawn
- 2006-05-16 TW TW095117214A patent/TW200735341A/zh unknown
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101675523B (zh) * | 2007-03-01 | 2012-06-20 | 郑苍隆 | 具有像素间隔离结构的位置相关移转的图像传感器 |
CN103811512A (zh) * | 2014-03-17 | 2014-05-21 | 北京思比科微电子技术股份有限公司 | 一种防止图像弥散的图像传感器像素结构及其制造方法 |
CN103811512B (zh) * | 2014-03-17 | 2017-01-04 | 北京思比科微电子技术股份有限公司 | 一种防止图像弥散的图像传感器像素结构及其制造方法 |
CN106241725A (zh) * | 2015-06-05 | 2016-12-21 | 豪威科技股份有限公司 | Rgb‑ir光传感器阵列、接收图像及检测彩色图像的方法 |
CN106241725B (zh) * | 2015-06-05 | 2021-08-06 | 豪威科技股份有限公司 | Rgb-ir光传感器阵列、接收图像及检测彩色图像的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20080019231A (ko) | 2008-03-03 |
EP1883968A1 (en) | 2008-02-06 |
JP2008546176A (ja) | 2008-12-18 |
TW200735341A (en) | 2007-09-16 |
WO2006124701A1 (en) | 2006-11-23 |
US20060255372A1 (en) | 2006-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101176208A (zh) | 具有抗模糊隔离的彩色像素和形成方法 | |
US7713809B2 (en) | Image sensor for reduced dark current | |
US7875918B2 (en) | Multilayer image sensor pixel structure for reducing crosstalk | |
US6946715B2 (en) | CMOS image sensor and method of fabrication | |
US7763913B2 (en) | Imaging method, apparatus, and system providing improved imager quantum efficiency | |
US7821046B2 (en) | Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels | |
EP1883969B1 (en) | Isolation process and structure for cmos imagers | |
US20070045668A1 (en) | Vertical anti-blooming control and cross-talk reduction for imagers | |
CN101258599B (zh) | 具有无隔离边缘的转移栅极的像素 | |
US20070246788A1 (en) | N-well barrier pixels for improved protection of dark reference columns and rows from blooming and crosstalk | |
EP1894247A1 (en) | Reduced imager crosstalk and pixel noise using extended buried contacts | |
US7704782B2 (en) | Method of forming pixel cells with color specific characteristics | |
US7554142B2 (en) | Ultrashallow photodiode using indium | |
KR20100025873A (ko) | 혼색 방지 불순물 격리 구조를 갖는 이미지 센서 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: APTINA IMAGING CORP. Free format text: FORMER OWNER: MICRON TECHNOLOGY INC. Effective date: 20100402 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: IDAHO,U.S.A. TO: CAYMAN ISLANDS |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100402 Address after: Cayman Islands Applicant after: Micron Technology Inc. Address before: Idaho Applicant before: Micron Technology, Inc. |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080507 |