CN102057076A - Coating system and method for coating a substrate - Google Patents
Coating system and method for coating a substrate Download PDFInfo
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- CN102057076A CN102057076A CN2009801216674A CN200980121667A CN102057076A CN 102057076 A CN102057076 A CN 102057076A CN 2009801216674 A CN2009801216674 A CN 2009801216674A CN 200980121667 A CN200980121667 A CN 200980121667A CN 102057076 A CN102057076 A CN 102057076A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
A coating system 1 comprises a lock-in chamber 3 and a lock-out chamber 4. Furthermore, the coating system comprises a first transfer chamber 5 connected with the lock-in chamber 3 and the lock-out chamber 4. In the transfer chamber 5 a first rotatable transfer module 6 is arranged. The substrate holders 7a, 7b may be rotated around a central axis such that substrate holders 7a and 7b may be positioned in alignment with the lock-in chamber 3 and the lock-out chamber 4, respectively. The coating station 1 further includes a first process chamber 8 and a second process chamber 9. Furthermore, the coating system 1 includes a second transfer chamber 10 having a second rotatable transfer module 11 including a third substrate holder 12a and a fourth substrate holder 12b. The second transfer chamber is connected with the first process chamber 8 and the second process chamber 9 as well as a third process chamber 13 and a fourth process chamber 14. The third process chamber 13 and the fourth process chamber 14 are arranged parallel, i.e. like a cluster arrangement, at the second transfer chamber 10. The invention provides for a possibility to increase the availability of the system by a sandwich arrangement of two parallel coating chambers 8 and 9 arranged on a forward path F and a return path R, respectively, between two transfer chambers 5 and 10 which are configured to transfer the substrate from the forward path F to the return path R and vice versa.
Description
Technical field
The present invention relates to be used for application system that substrate is handled, comprising: the chamber layout, described chamber layout comprises first treatment chamber and second treatment chamber; Wherein, described first treatment chamber is disposed on the series connection progress path partly of described application system, and described second treatment chamber is disposed on the series connection return path partly of described application system.And, the invention still further relates to the method that is used for especially in aforesaid application system coated substrate.
Background technology
In a lot of technology are used, in a series of coating steps, a plurality of layers are piled up (layer stack) and deposit on the substrate.For example, in TFT (thin film transistor) metalized, deposit two or three different metal by sputter process.Because different coating rates in the different treatment steps and a plurality of layers different thickness, the deposition used treatment time of different layers alters a great deal on the coating worktable.
Pile up a lot of configurations that proposed coating and treatment chamber in order to deposit a plurality of layers.For example, use the coating chamber of series arrangement, also use the coating chamber of cluster layouts.A lot of coating chambers that typical cluster layouts comprises the central management chamber and is connected to the central management chamber.Coating chamber can be equipped with and carry out identical or different coating processing.Yet although in series system the management of handling is very easy to, the treatment time is by the longest treatment time decision.Therefore, the efficient of influence processing.On the other hand, cluster tool allows different cycle time (cycle time).Yet management may be very complicated, and it need provide meticulous transmission system in the central management chamber.
Made up the replaceable design of the series connection and the design of trooping and described in file EP 1 801 843 A1, the content of this document is incorporated into this by reference.File description be used to deposit the application system that the TFT layer piles up, this application system has: import chamber (lock-in chamber) into, the metallization work platform that is used for first metalized, the central management chamber, be used for two metallization work platforms of second metalized, and be used for the first second metallization work platform of handling.Be used for second metallization chamber of handling by layout for being connected in parallel to each other and being used alternatingly.The treatment chamber that is used for first metalized is made each substrate all processed two chambers by series arrangement.The cycle time of system, the combination by the series connection design and the design of trooping was reduced, and this is to have improved throughput simultaneously because combination has reduced the complicacy of handling.
File US 2007/020903A2 discloses the treatment system that is used to make the method for membrane stack and is used for forming membrane stack on substrate.
Yet, must through under the situation of maintenance processing or clean (when for example changing sputtering target) at specific coating chamber, the operation of application system must stop fully.
Summary of the invention
Purpose of the present invention
The objective of the invention is to improve the overall throughput and the efficient of application system, especially use at the TFT metal.
Technical scheme
This purpose is by providing application system according to claim 1, and the method that is used for coated substrate according to claim 11 solves.Dependent claims is at preferred feature of the present invention.
A kind of application system according to the present invention is used for substrate is handled and comprised: the chamber layout, and described chamber layout comprises first treatment chamber and second treatment chamber; Wherein, described first treatment chamber is disposed on the series connection progress path partly of described application system, and described second treatment chamber is disposed on the series connection return path partly of described application system.Described first treatment chamber and the described second treatment chamber both are disposed between first transfer chamber and second transfer chamber, and described first transfer chamber and described second transfer chamber are configured to substrate is sent to the described return path of the described second series connection part and vice versa from the described progress path of the described first series connection part.
In the routine work pattern, promptly, if first treatment chamber and second treatment chamber are all in running order, then progress path is defined as being defined as mobile route from second transfer chamber to the substrate that spreads out of the chamber from importing the chamber into to the mobile route of the substrate of second transfer chamber and return path.In order to transmit along transfer path, substrate can be supported by substrate holder.Substrate can be attached to substrate holder.In another embodiment, substrate can pass through application system not having (for example to utilize the air cushion transmission system) under the situation of carriage.
First treatment chamber and second treatment chamber are arranged in parallel to be arranged and is arranged to and import/spread out of worktable into and first transfer chamber is connected.First transfer chamber is disposed in and imports into/spread out of between worktable and first and second treatment chamber, and is configured to and will be transferred to first treatment chamber and second treatment chamber respectively from the substrate that imports/spread out of the worktable reception into.In addition, application system comprises second transfer chamber, and this second transfer chamber is arranged to the substrate of connecting with first and second treatment chamber and being configured to receive from first treatment chamber or second treatment chamber and is sent to another chamber.
Treatment chamber can be any work of treatment platform, especially for settled layer on first substrate or layer coating worktable that piles up.In the TFT coating processing, two, three or more metal levels are deposited on the substrate.First treatment chamber and second treatment chamber can be the washing worktable that for example is used for providing by first sputter process Mo layer.The 3rd treatment chamber and the 4th treatment chamber can be the washing worktable that for example is used for providing on first substrate by second sputter process A1 layer.More substrate, for example second, third, the 4th substrate etc. can enter application system and in application system with first substrate one after the other and with the time handled.That is, different processing and transmitting steps can be overlapping.
Application system is characterised in that the specified arrangement of management and work of treatment platform.Two transfer chambers all can receive substrate and substrate can be fed to first and second treatment chambers both from each treatment chamber.Therefore, in first or second treatment chamber is because under the pent situations such as preparation, maintenance, cleaning, another in first and second treatment chambers still can be worked and the substrate by treatment chamber is handled.Certainly, when being closed for one in first or second treatment chamber, increase cycle time, and this is because each substrate is not will pass through second treatment chamber by first treatment chamber on both direction.Therefore in tandem paths owing to there is bottleneck in first or second treatment chamber that lacks.When the shared specific treatment chamber of progress path and return path, the throughput of whole application system and efficient reduce.Yet, can avoid the work of whole application system must not non-stop situation, thereby improve the operability of application system.
Extra transfer chamber has been introduced in design described in file EP 1 801 843 A1, and it allows to use the corresponding coating worktable that is arranged in parallel with specific coating worktable to make the substrate on the tandem paths walk around specific coating worktable.This creationary notion can be applied to each application system, in application system, treatment chamber in the progress path of series system (perhaps Zu He series connection-cluster system) is arranged to the alignment processing chamber parallel connection in the return path with series system (perhaps combination connects-cluster system), these two treatment chambers all are disposed between first transfer chamber and second transfer chamber, permission will be at progress path (or return path) on the contrary go up the substrate that transmits by change to from progress path return path or, walk around in two treatment chambers.When leading in the way of third and fourth treatment chamber respectively and carrying out under the situation of identical processing in two treatment chambers from the way that third and fourth treatment chamber returns respectively, this design is especially suitable.
Preferably, the chamber layout comprises and is used for respectively substrate being imported into described application system and/or substrate is spread out of importing into outside the described application system/spread out of worktable.First treatment chamber and second treatment chamber are arranged to and import/spread out of worktable, first transfer chamber and second transfer chamber into and connect.
Particularly, first treatment chamber and second treatment chamber comprise the coated tool that is used for by first coating processing settled layer on substrate.First coating processing can be a metalized, for example the Mo metalized.Coating processing can be a sputter process.
In a preferred embodiment of the invention, the chamber layout comprises at least and is used at least the three treatment chamber that substrate is handled that wherein the 3rd treatment chamber is connected to second treatment chamber.
Particularly, the chamber layout comprises the 4th treatment chamber that is arranged in parallel with described the 3rd treatment chamber that is connected to described second transfer chamber.The 4th treatment chamber can be arranged in parallel with the 3rd treatment chamber, and the substrate that second transfer chamber is configured to receive from first treatment chamber and second treatment chamber respectively is sent to one the 3rd treatment chamber and the 4th treatment chamber.But sediment-filled phase coat together in the 3rd treatment chamber and the 4th treatment chamber, for example, third and fourth treatment chamber can be the coating worktable that is used for by sputter process depositing Al layer on substrate.Due to the fact that the thickness of Al layer in the TFT system much larger than it down and the thickness of the Mo layer that is covered on it, so the 3rd treatment chamber and the 4th treatment chamber as cluster tool work, for example, they alternately load from second transfer chamber.
In fact, first transfer chamber is set at first and second treatment chambers and/or imports into/spread out of and transmits substrate at least between the two in the chamber.Second transfer chamber is set for and transmits substrate at least between the two in the first, second, third and/or the 4th treatment chamber.First and/or second transfer chamber can be the vacuum transfer chamber.
In conventional processing, first substrate transmits along progress path from importing the chamber into,, enters first treatment chamber and applies to obtain first therein by first transfer chamber along first substrate holder.Then first substrate be sent to second transfer chamber and enter the 3rd treatment chamber and the 4th treatment chamber in any apply to obtain second therein.Afterwards, first substrate is sent to passback on return path, enters second treatment chamber to obtain the 3rd coating therein by second transfer chamber.First substrate is transmitted through first transfer chamber and enters spread out of the chamber so that the substrate through applying is shifted out from application system then.
Alternately, for example under the not in running order situation of first coating chamber, the substrate that is just transmitting on progress path can alternatively be sent to second treatment chamber and apply to obtain first.Perhaps, for example under the not in running order situation of second coating chamber, just turning back in the way of first transfer chamber, can be sent to first treatment chamber rather than second coating chamber to obtain the 3rd coating at the substrate that transmits on the return path.
No matter whenever in running order first treatment chamber and second treatment chamber be, and the series connection-cluster system of combination provides high-level efficiency.If one or more can not the use in the treatment chamber, system still can carry out work with the efficient that has reduced, but can almost guarantee the operability of application system continuously.
Preferably, the 3rd treatment chamber and the 4th treatment chamber comprise the coated tool that is used to use second coating processing settled layer on substrate.Second coating processing can make metalized, for example the Al metalized.Second metalized can be a sputter process.
First treatment chamber and second treatment chamber are configured to provide first coating processing, and the 3rd treatment chamber and the 4th treatment chamber are configured to provide second coating processing.For example, in the TFT application system, first processing can be first metalized, and second processing can be second metalized.One or both in these two processing can utilize sputtering method to carry out.
Particularly, importing/spread out of worktable into comprises and imports the chamber into and spread out of the chamber.Import the chamber into and defined the beginning of the progress path of substrate processed in application system, the chamber of spreading out of has defined the end of the return path of substrate.For example, progress path is defined in and imports between the chamber and second transfer chamber, and return path is defined in second transfer chamber and spreads out of between the chamber.Progress path or return path can be arranged on the path the chamber since for example maintenance purpose etc. be under the situation of off working state and interrupt.Yet, the layout of first transfer chamber and second transfer chamber allows substrate to walk around the treatment chamber on progress path and return path respectively, and this is because first and second treatment chambers are configured to substrate is sent to return path and vice versa from the progress path of application system.
Preferably, first transfer chamber is connected with second treatment chamber with first treatment chamber, and first treatment chamber is connected with second transfer chamber with second treatment chamber, and the 3rd treatment chamber is connected with second transfer chamber with the 4th treatment chamber.
First transfer chamber can comprise the first rotatable module with at least one substrate holder that is used to keep substrate.The first rotatable module be configured to make substrate holder with respect to first treatment chamber, second treatment chamber, import the chamber into and/or the chamber of spreading out of is aimed to receive substrate from it, perhaps the substrate that is received in the transfer chamber is delivered to each chamber.
Second transfer chamber can comprise the second rotatable module with at least one substrate holder that is used to keep substrate.The second rotatable module is configured to make substrate holder to aim in line to receive substrate from it with respect to first treatment chamber, second treatment chamber, the 3rd treatment chamber and/or the 4th treatment chamber, perhaps the substrate that is received in the transfer chamber is delivered to each chamber.
Particularly, the first and/or second rotatable module has at least the first substrate holder and second substrate holder that is used to keep first substrate and/or second substrate.First substrate holder is become to make by layout with second substrate holder, when first substrate holder is aligned to receive first substrate from specific chamber or when substrate was sent in specific chamber, second substrate holder was aligned to accept second substrate from another chamber or to send second substrate to another chamber.(one or more) turn module (when rotating substrate holder) and change the alignment condition of substrate with respect to transfer path.The angle of the change of alignment condition is corresponding to the rotational angle of rotatable module.Particularly, for substrate is transferred to second transfer path from first transfer path, module is rotated 180 °.
The method that is used for coated substrate according to the present invention in aforesaid application system may further comprise the steps:
A) via importing the chamber into substrate is imported in the described application system;
B) described substrate is sent in first transfer chamber;
C) described substrate is sent in one in first treatment chamber and second treatment chamber to utilize first processing that described substrate is handled;
D) described substrate is sent in second transfer chamber; And
Described substrate is sent in one in the 3rd treatment chamber and the 4th treatment chamber to utilize second processing that described substrate is handled.Preferably this method is further comprising the steps of:
F) substrate is sent to second transfer chamber from the 3rd treatment chamber or the 4th treatment chamber; And
G) substrate is sent in described first treatment chamber or described second treatment chamber to utilize the 3rd processing that substrate is handled.The 3rd processing can be identical or different with first processing.
Step g) can comprise the steps: with described substrate be sent to described step c) in the identical treatment chamber to utilize the 3rd to handle described substrate is handled.When one in first or second treatment chamber because maintenance purpose etc. can be used this step when being in off working state.
This method is further comprising the steps of: h) described substrate is sent in described first transfer chamber; And i) described substrate is sent to spreads out of in the chamber.
Preferably this method is used to produce the TFT thin film transistor.
Aforesaid method repeats by second substrate is handled one after the other with more substrate.Substrate is one after the other by the work of treatment platform.In the cluster configurations of application system, can be simultaneously, promptly the time handles two or more substrates (number that depends on the coating chamber that is used for particular procedure) overlappingly.In (one or more) series connection part of the configuration of application system, substrate is one after the other managed in the chamber throughout and is handled.
By the present invention, can realize the high productive capacity of application system, avoid the shut-down period of total system simultaneously basically.
Require the right of above-mentioned feature arbitrary combination in essence.
Description of drawings
With reference to the accompanying drawings, from the description of following preferred embodiment, more feature of the present invention and advantage are with self-evident.Accompanying drawing is explained
Fig. 1 is the schematic representation according to application system of the present invention; And
Fig. 2 shows the different working modes according to application system of the present invention.
Embodiment
As shown in Figure 1, application system 1 according to the present invention comprises and imports/spread out of (lock-in/lock-out) worktable into, and this imports/spread out of worktable into and comprises and import chamber 3 into and spread out of chamber 4.Substrate is presented and is comprised swing module (air pressure) with receiving unit 2 and be used for that substrate is fed to system 1 and/or be received in the pneumatic rotating module of substrate treated in the system 1.In addition, application system 1 comprises and imports chamber 3 into and spread out of first transfer chamber 5 that chamber 4 is connected.
In transfer chamber 5, arranged the first rotatable transport module 6.Rotatable module 6 has two substrate holder 7a that are disposed on the rotatable platform, 7b.Substrate holder 7a, 7b can rotate around central shaft, makes substrate holder 7a, 7b can be placed as respectively with importing chamber 3 into and spread out of chamber 4 and aims at.
Apply worktable 1 and comprise also that first treatment chamber 8 and second treatment chamber, 9, the first and second treatment chambers all are equipped with and be used on substrate, depositing the first metal layer, for example, the Mo metal layer.First treatment chamber 8 is connected with first transfer chamber 5 with second treatment chamber 9.Rotatable transport module 6 can be rotated, make win substrate holder 7a with import chamber 3 into and first treatment chamber 8 is aimed at, and the second substrate holder 7b with spread out of the 9 one-tenth alignings in the chamber 4 and second treatment chamber, and vice versa.
In addition, application system 1 comprises that second transfer chamber, 10, the second rotatable transport modules 11 with second rotatable transport module 11 comprise the 3rd substrate holder 12a and the 4th substrate holder 12b.Second transfer chamber 10 is configured to similar or the same with first transfer chamber 5.
Second transfer chamber is connected to first treatment chamber 8 and second treatment chamber 9 and the 3rd treatment chamber 13 and the 4th treatment chamber 14.The 3rd treatment chamber 13 and the 4th treatment chamber 14 are arranged in the second transfer chamber 10 places parallel connection (that is, as cluster layouts).The 3rd treatment chamber 13 and the 4th treatment chamber 14 are equipped with and are used for deposition second metal level, for example Al metal layer on substrate.Rotatable transport module 11 can be rotated, and makes the 3rd substrate holder 12a aim at first treatment chamber 8 and the 3rd treatment chamber 13, and the 4th substrate holder 12b aims at second treatment chamber 9 and the 4th treatment chamber 14, and vice versa.
The series connection progress path F of substrate production line that imported chamber 3, the first substrate holder 7a and first treatment chamber, 8 boundary's justice into.Second treatment chamber, 9, the second substrate holder 7b and spread out of the series connection return path R that production line has been defined in chamber 4.Second transfer chamber, 10, the three treatment chambers 13 and the 4th treatment chamber 14 have defined cluster tool, wherein Bing Lian treatment chamber 13 and the 4th treatment chamber 14 by layout at second transfer chamber, 10 places.Can also exist and the third and fourth treatment chamber identical category or other different classes of coating chambers.
In the coating processing of routine, promptly when first treatment chamber 8, the second treatment chambers, 9, the three treatment chambers 13 and the 4th treatment chamber 14 were in running order, first substrate was imported in system to enter first transfer chamber 5 via importing chamber 3 into.First substrate that enters first transfer chamber 5 is sent in first treatment chamber through the first substrate holder 7a, to obtain first metal layer, for example Mo layer by sputter process.Then, first substrate is sent in second transfer chamber 10.First substrate is sent in the 3rd treatment chamber 13 or the 4th treatment chamber 14 subsequently, to obtain second metal layer by second sputter process, and Al layer for example.Because the second layer is than first bed thickness, the cycle time that therefore is used for producing the second layer in the 3rd treatment chamber 13 or the 4th treatment chamber 14 is significantly longer than the cycle time that is used at first treatment chamber 8 or second treatment chamber 9 to produce layer.
During this period, second substrate can enter second transfer chamber 10 via importing chamber 3, the first transfer chambers 5 and first treatment chamber 8 into.Second substrate is transferred to arbitrary treatment chamber that the 3rd treatment chamber 13 and the 4th treatment chamber 14 are not occupied by first substrate among both.Then, first substrate is transmitted gets back to second transfer chamber 10 and second treatment chamber 9, to obtain the 3rd metal layer, for example Mo layer in first sputter process.
During this period, the 3rd substrate can enter second transfer chamber 10 and be transferred to the 3rd treatment chamber 13 and arbitrary treatment chamber that the 4th treatment chamber 14 is not occupied by second substrate among both.When first substrate was transmitted through first transfer chamber 5 and spreads out of chamber 4, second substrate was sent to second treatment chamber 9 to obtain the 3rd metal layer.More substrate can be followed the 3rd substrate and be piled up to deposit the TFT layer thereon by application system.
In this (routine) operating mode, substrate is transmitted between progress path F and return path R.First transfer chamber 5 as with substrate directly from importing that chamber 3 is transferred to first treatment chamber 8 into and at second treatment chamber 9 with spread out of the transfer chamber of transmission between the chamber 4.Rotating module 6 keeps the predetermined position.
In another indicated in the drawings situation, second treatment chamber 9 is owing to safeguarding that (for example changing sputtering target) is in off working state.When this situation took place, first treatment chamber, 8 usefulness acted on the treatment chamber that deposits first metal layer and the 3rd metal layer on each processed in application system 1 substrate.
Particularly, first substrate enters in the application system 1 via importing chamber 3 into, and is sent in first treatment chamber 8 along the first substrate holder 7a by first transfer chamber 5, to obtain first metal layer by first sputter process, and Mo layer for example.Then, first substrate be sent in second transfer chamber 10 and be sent to the 3rd treatment chamber 13 and the 4th treatment chamber 14 in one in, to obtain second metal level by second sputter process, Al layer for example.Afterwards, when second substrate entered second transfer chamber 10 from first treatment chamber 8, first substrate was transferred back to second transfer chamber 10.Then, when second substrate was sent to the 3rd treatment chamber 13 or the 4th treatment chamber 14, first substrate was aimed at and is transferred back in first treatment chamber 8 to obtain the 3rd metal layer with first treatment chamber 8.Then, first substrate enters in first transfer chamber 5.Rotatable transport module 6 is rotated, make win substrate with spread out of chamber 4 and aim at.Be under the situation of position at rotatable transport module 6, another substrate can enter in first transfer chamber 5 via importing chamber 3 into.Afterwards, the 3rd substrate is processed in first treatment chamber 8.
This process enters application system 1 along with new substrate and another substrate of application system 1 and repetition are continuously left in replacement.Certainly, under the situation of shut-down period of first treatment chamber 8 or second treatment chamber 9 (also having the 3rd treatment chamber 13 or the 4th treatment chamber 14), handle the substrate that ascertains the number and to increase used cycle time.Yet, do not need to stop the operation of whole application system 1, thereby guaranteed the operability of system.During passing through the transmission of application system 1, substrate is arranged with vertical substantially attitude usually.The vacuum-sealing that sluice valve is used for the chamber is installed between the chamber.
In second operating mode, for example, when second treatment chamber 9 is in off working state, walk around second treatment chamber 9 from the substrate that the 3rd treatment chamber 13 or the 4th treatment chamber 14 return.First transfer chamber 5 and second transfer chamber 10 can make substrate leave return path R and walk around second treatment chamber 9 on progress path F.
Fig. 2 has illustrated the different working modes according to application system of the present invention.
First operating mode a) in, first treatment chamber 8, the second treatment chambers, 9, the three treatment chambers 13 and the 4th treatment chamber 14 are all in running order.Therefore, can carry out above-mentioned conventional coating procedure.In this operating mode, substrate in system in the chamber 8 (Mo), 13 or 14 (Al; Replacedly) and among 9 (Mo) one after the other handled.That is, first substrate, the 3rd substrate, the 5th substrates etc. are processed in the 3rd Room, and second substrate, the 4th substrate, the 6th substrates etc. are processed in the 4th treatment chamber 14.Therefore will increase cycle time.
At the second operating mode b) in, for the identical deposition of Mo layer and Al layer and the 4th treatment chamber 14 is under the situation of off working state, increased s cycle time.Therefore, bottleneck is the Al coating processing in the 3rd treatment chamber 13 and the 4th treatment chamber 14 respectively.
At the 3rd operating mode c) in, second treatment chamber 9 is in off working state.Owing to only in first treatment chamber 8, deposit for all substrate Mo layers, so increase cycle time.Bottleneck in this pattern is the transmission and the rotation of the substrate in the transfer chamber, that is, and and the substrate management.
At the 4th operating mode d) in, first treatment chamber 8 and the 4th treatment chamber 14 are being in off working state.Cycle time is owing to following bottleneck increases: the Al in management in transfer chamber 5 and transfer chamber 10 and the 3rd treatment chamber 13 applies.
Generally speaking, the invention provides the operability that sandwich layout as described below improves system: the coating chamber of two parallel connections by layout between two transfer chambers, in two coating chambers of placing side by side one belongs to progress path F, another person belongs to return path R, and two transfer chambers are configured to substrate is sent to return path R and vice versa from progress path F.
Claims (15)
1. an application system (1) is used for substrate is handled, and comprises:
Chamber layout, described chamber layout comprise first treatment chamber (5) and second treatment chamber (9);
Wherein, described first treatment chamber (8) is disposed on the progress path (F) of series connection part of described application system (1), and described second treatment chamber (9) is disposed on the return path (R) of series connection part of described application system (2),
Described application system is characterised in that
Described first treatment chamber (8) and described second treatment chamber (9) both are disposed between first transfer chamber (5) and second transfer chamber (10), and described first transfer chamber (5) and described second transfer chamber (10) are configured to substrate is sent to the described return path (R) of the described second series connection part and vice versa from the described progress path (F) of the described first series connection part.
2. application system according to claim 1 (1),
It is characterized in that
Described chamber layout comprises being used for respectively substrate being imported into described application system (1) and/or substrate being spread out of imports/spreads out of worktable (2) into outside the described application system (1);
Wherein said first treatment chamber (8) and described second treatment chamber (9) are arranged to and described importing into/spread out of worktable (2), described first transfer chamber (5) and described second transfer chamber (10) to connect.
3. application system according to claim 1 and 2 (1),
It is characterized in that
Described first treatment chamber (8) and described second treatment chamber (9) comprise the coated tool that is used for by first coating processing settled layer on substrate.
4. according to each described application system (1) in the claim 1 to 3,
It is characterized in that
Described chamber layout comprises at least and is used for the 3rd treatment chamber (13) that substrate is handled that wherein said the 3rd treatment chamber (13) is connected to second treatment chamber (10).
5. according to each described application system (1) in the claim 1 to 4,
It is characterized in that
Described chamber layout comprises the 4th treatment chamber (14) that is arranged in parallel with described the 3rd treatment chamber (13) that is connected to described second transfer chamber (10).
6. according to each described application system (1) in the claim 1 to 5,
It is characterized in that
Described the 3rd treatment chamber (13) and described the 4th treatment chamber (14) comprise the coated tool that is used at second coating processing settled layer on substrate.
7. according to each described application system (1) in the claim 1 to 6,
It is characterized in that
Described importing into/spread out of worktable (2) comprises and imports chamber (3) into and spread out of chamber (4).
8. according to each described application system (1) in the claim 1 to 7,
It is characterized in that
Described first transfer chamber (5) is connected with described second treatment chamber (4) with described first treatment chamber (3), and described first treatment chamber (3) is connected with described second transfer chamber (10) with described second treatment chamber (4), and described the 3rd treatment chamber (13) is connected with described second transfer chamber (10) with described the 4th treatment chamber (14).
9. according to each described application system (1) in the claim 1 to 8,
It is characterized in that
Described first transfer chamber (5) comprises having at least one substrate holder (7a, the first rotatable module (6) 7b) that is used to keep substrate.
10. according to each described application system (1) in the claim 1 to 9,
It is characterized in that
Described second transfer chamber (10) comprises having at least one substrate holder (12a, the second rotatable module (11) 12b) that is used to keep substrate.
11. the method for a coated substrate in according to each described application system in the claim 1 to 10 may further comprise the steps:
A) via importing the chamber into substrate is imported in the described application system;
B) described substrate is sent in first transfer chamber;
C) described substrate is sent in one in first treatment chamber and second treatment chamber to utilize first processing that described substrate is handled;
D) described substrate is sent in second transfer chamber; And
E) described substrate is sent in one in the 3rd treatment chamber and the 4th treatment chamber to utilize second processing that described substrate is handled.
12. method according to claim 11,
It is characterized in that
Described method is further comprising the steps of:
F) described substrate is sent to described second transfer chamber from described the 3rd treatment chamber or the 4th treatment chamber; And
G) described substrate is sent in described first treatment chamber or described second treatment chamber to utilize the 3rd processing that described substrate is handled.
13. according to claim 11 or 12 described methods,
It is characterized in that
Step g) comprise the steps: with described substrate be sent to described step c) in the identical treatment chamber to utilize the 3rd to handle described substrate is handled.
14. according to claim 11 or 12 or 13 described methods,
It is characterized in that
Described method is further comprising the steps of: h) described substrate is sent in described first transfer chamber; And i) described substrate is sent to spreads out of in the chamber.
15. according to each described method in the claim 11 to 14,
It is characterized in that
Described method is used to produce the TFT thin film transistor.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08157866.8 | 2008-06-09 | ||
| US12/135,581 | 2008-06-09 | ||
| EP20080157866 EP2133445B1 (en) | 2008-06-09 | 2008-06-09 | Coating System and Method for Coating a Substrate |
| US12/135,581 US20090304907A1 (en) | 2008-06-09 | 2008-06-09 | Coating system and method for coating a substrate |
| PCT/EP2009/053105 WO2010000503A1 (en) | 2008-06-09 | 2009-03-16 | Coating system and method for coating a substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102057076A true CN102057076A (en) | 2011-05-11 |
| CN102057076B CN102057076B (en) | 2013-03-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801216674A Expired - Fee Related CN102057076B (en) | 2008-06-09 | 2009-03-16 | Coating system and method for coating a substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5657527B2 (en) |
| KR (1) | KR20110018425A (en) |
| CN (1) | CN102057076B (en) |
| TW (1) | TWI495753B (en) |
| WO (1) | WO2010000503A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102859034B (en) * | 2010-04-30 | 2015-04-29 | 应用材料公司 | Vertical inline CVD system |
| TWI451521B (en) * | 2010-06-21 | 2014-09-01 | Semes Co Ltd | Substrate treating apparatus and substrate treating method |
| EP2489759B1 (en) * | 2011-02-21 | 2014-12-10 | Applied Materials, Inc. | System for utilization improvement of process chambers and method of operating thereof |
| CN104620370B (en) * | 2012-09-10 | 2018-09-28 | 应用材料公司 | Base plate processing system and the method for handling substrate |
| JP6741594B2 (en) * | 2014-02-04 | 2020-08-19 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | System for depositing one or more layers on a substrate supported by a carrier, and methods of using the system |
| DE102016125278A1 (en) * | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Apparatus, method and use for coating lenses |
| CN114127331A (en) * | 2019-07-25 | 2022-03-01 | 应用材料公司 | Substrate processing system for processing a plurality of substrates and method of processing substrates in an inline substrate processing system |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303062A (en) * | 1987-06-02 | 1988-12-09 | Nec Corp | Apparatus for producing semiconductor integrated circuit |
| US6919001B2 (en) * | 2000-05-01 | 2005-07-19 | Intevac, Inc. | Disk coating system |
| JP2002309372A (en) * | 2001-04-13 | 2002-10-23 | Canon Inc | Inline type film deposition apparatus, film deposition method and liquid crystal element |
| JP2004241319A (en) * | 2003-02-07 | 2004-08-26 | Sony Corp | Film forming device |
| JP4276860B2 (en) * | 2003-02-21 | 2009-06-10 | 本田技研工業株式会社 | Coating device for protective layer forming material |
| JP4417734B2 (en) * | 2004-01-20 | 2010-02-17 | 株式会社アルバック | In-line vacuum processing equipment |
| US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| EP1801843B1 (en) * | 2005-12-22 | 2013-07-03 | Applied Materials GmbH & Co. KG | Arrangement and method for the treatment of substrates |
| JP4859485B2 (en) * | 2006-02-27 | 2012-01-25 | 三菱重工業株式会社 | Organic semiconductor manufacturing equipment |
| JP2008028036A (en) * | 2006-07-19 | 2008-02-07 | Phyzchemix Corp | Apparatus for manufacturing semiconductor |
-
2009
- 2009-03-16 JP JP2011512906A patent/JP5657527B2/en not_active Expired - Fee Related
- 2009-03-16 KR KR1020117000624A patent/KR20110018425A/en not_active Application Discontinuation
- 2009-03-16 CN CN2009801216674A patent/CN102057076B/en not_active Expired - Fee Related
- 2009-03-16 WO PCT/EP2009/053105 patent/WO2010000503A1/en active Application Filing
- 2009-03-27 TW TW098110209A patent/TWI495753B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102057076B (en) | 2013-03-06 |
| WO2010000503A1 (en) | 2010-01-07 |
| TW200951239A (en) | 2009-12-16 |
| JP2011522968A (en) | 2011-08-04 |
| KR20110018425A (en) | 2011-02-23 |
| JP5657527B2 (en) | 2015-01-21 |
| TWI495753B (en) | 2015-08-11 |
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