CN101488443A - Batch forming system of amorphous silicon - Google Patents
Batch forming system of amorphous silicon Download PDFInfo
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- CN101488443A CN101488443A CNA2008100026580A CN200810002658A CN101488443A CN 101488443 A CN101488443 A CN 101488443A CN A2008100026580 A CNA2008100026580 A CN A2008100026580A CN 200810002658 A CN200810002658 A CN 200810002658A CN 101488443 A CN101488443 A CN 101488443A
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- forming cavity
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Abstract
The invention relates to a batch forming system for amorphous silicon, comprising at least a forming cavity with p layers provided with an air-tight door which can open and close, at least a forming cavity with i layers provided with an air-tight door which can open and close, at least a forming cavity with n layers provided with an air-tight door which can open and close, a shared vacuum cavity which is connected with the forming cavities, a conveying device with a bearing surface which can respectively move to the front of the air-tight doors and a material bearing cart which bears a plurality of flake material and goes through air-tight doors to enter the forming cavities through the bearing surface or withdraws from the forming cavities to the bearing surface, thus accelerating production speed and realizing one-time-multi-flake-forming in batch.
Description
Technical field
The present invention is relevant with the forming technique of amorphous silicon film, is meant a kind of batch forming system of amorphous silicon film especially.
Background technology
Press, recently because energy shortage and the surging problem of oil price, make alternative energy source be subjected to extensive attention, and in the alternative energy source technology, utilize solar energy to produce the solar cell of electric energy, promptly because it has the speciality of the high feature of environmental protection, and cause and note widely and attracted huge development resources.
The amorphous silicon thin-film solar cell of present main flow, amorphous silicon membrane in its manufacture process is to be key, present general manufacture is that (Plasma-Enhance Chemical Vapor Deposition PECVD) makes shaping by the plasma auxiliary chemical vapor deposition method.And amorphous silicon membrane is deposited by p-a-Si:H, i-a-Si:H and three layers of material of n-a-Si:H (being p-i-n) to form.
P-i-n film now on forming technique, mainly is to treat that deposit (for example glass plate) is horizontally placed in the cavity, and the p layer that is shaped in regular turn again in this cavity, i layer, and n layer film outwards shift out this again and treat deposit after finishing.And this kind forming mode, because three layers all be at same cavity internal shaping, therefore in the process of conversion sedimentary deposit, raw-gas in this cavity must be extracted out, the gas of corresponding sedimentary deposit that reinjects, and control well after the concentration, vapour deposition next time could be begun.This kind mode causes technologic wait, and the film shaped time is elongated, and is unfavorable for quick production.
Summary of the invention
The object of the present invention is to provide a kind of batch forming system of amorphous silicon film, its various amorphous silicon membrane is separately to carry out, and can this improve speed of production, and can a multi-disc be shaped in a batch mode.
For achieving the above object, the batch forming system of amorphous silicon film provided by the invention includes:
At least one p layer forming cavity, in order to deposition one deck amorphous silicon p type film on a sheet material, but this p layer forming cavity has a hermatic door of On/Off;
At least one i layer forming cavity, in order to deposition one deck amorphous silicon i type film on a sheet material, but this i layer forming cavity has a hermatic door of On/Off;
At least one n layer forming cavity, in order to deposition one deck amorphous silicon n type film on a sheet material, but this n layer forming cavity has a hermatic door of On/Off;
One shares vacuum chamber, links to each other with this p layer forming cavity, this i layer forming cavity and this n layer forming cavity, and the On/Off by those hermatic doors makes the shared vacuum chamber internal insulation of those forming cavity and this/communicate;
One conveying arrangement is positioned at this shared vacuum chamber, has a loading end, and this conveying arrangement is movable and make this loading end move to respectively hermatic door the place ahead of this forming cavity respectively; And
One material containing car is positioned on the loading end of this conveying arrangement, the sheet material of carrying plural number, and this material containing car can be entered in aforesaid respectively this forming cavity by each sealing door by this loading end, or by respectively withdrawing to this loading end in this forming cavity.
The batch forming system of described amorphous silicon film, wherein: have a p layer forming cavity, two i layer forming cavity and a n layer forming cavity.
The batch forming system of described amorphous silicon film, wherein: those forming cavity are the sequence arrangement according to p, i, i, n.
The batch forming system of described amorphous silicon film, wherein: those forming cavity are to be arranged in a linear, and respectively the hermatic door of this forming cavity towards same direction.
The batch forming system of described amorphous silicon film, wherein: those forming cavity are to arrange in the form of a ring, and respectively the hermatic door of this forming cavity towards the center of circle that those forming cavity surrounded.
The batch forming system of described amorphous silicon film, wherein: this conveying arrangement is a rotating platform.
The batch forming system of described amorphous silicon film, wherein: those forming cavity are to arrange relatively in twos, and the hermatic door of relative forming cavity is relative.
The batch forming system of described amorphous silicon film, wherein: this conveying arrangement is a motion chassis, and this loading end is located at the top of this conveying arrangement.
The batch forming system of described amorphous silicon film, wherein: the sheet material in this material containing car is erectility, and the preset distance of being separated by.
The batch forming system of described amorphous silicon film wherein includes: a material inlet/outlet, this material inlet/outlet be located at this shared vacuum chamber, this p layer forming cavity and this n layer forming cavity three one of them.
The batch forming system of described amorphous silicon film, wherein include: one goes into a bin gate and a discharge door, this goes into that bin gate is located at this p layer forming cavity and the relation of isolating with the external world/communicating, and this discharge door is located at this n layer forming cavity and the relation of isolating with the external world/communicating.
The batch forming system of described amorphous silicon film, wherein include: a pan feeding chamber and a discharging chamber, this pan feeding chamber is connected in this p layer forming cavity, and is provided with a hermatic door between this p layer forming cavity and this pan feeding chamber, and this pan feeding chamber has the relation of isolating with the external world/communicating into bin gate; This discharging chamber is connected in this n layer forming cavity, and is provided with a hermatic door between this n layer forming cavity and this discharging chamber, and this discharging chamber has a discharge door and the relation of isolating with the external world/communicating.
The batch forming system of described amorphous silicon film wherein includes: the temporary storage cavity more than be connected in this shared vacuum chamber, and this temporary storage cavity has a hermatic door and the relation of isolating/communicating with this shared vacuum chamber.
As from the foregoing, the attainable effect of the present invention is:
One, can improve speed of production: separately carry out by various amorphous silicon membrane, can make a kind of forming cavity only handle a kind of amorphous silicon film, thus, can avoid the problem of gases to be replaced such as known technology needs, and can improve speed of production.
Two, can a multi-disc be shaped: be arranged at this material containing car in upright mode by those sheet materials in a batch mode, and the preset distance of being separated by to each other, can be at the amorphous silicon membrane that carries out corresponding kenel of a multi-disc in this forming cavity respectively, and transport this material containing car to this forming cavity respectively by this conveying arrangement, and the effect that the mode that can reach batch is shaped.
Description of drawings
Fig. 1 is the schematic diagram of the present invention's first preferred embodiment.
Fig. 2 is first action diagram of the present invention's first preferred embodiment.
Fig. 3 is second action diagram of the present invention's first preferred embodiment.
Fig. 4 is the schematic diagram of the present invention's second preferred embodiment.
Fig. 5 is the schematic diagram of the present invention's the 3rd preferred embodiment.
Fig. 6 is the schematic diagram of the present invention's the 4th preferred embodiment.
Fig. 7 is the schematic diagram of the present invention's the 5th preferred embodiment.
Primary clustering symbol description in the accompanying drawing:
The batch forming system of 10 amorphous silicon films
11p layer forming cavity
13i layer forming cavity
15n layer forming cavity
12,14,16 hermatic doors
17 share vacuum chamber
18 material inlet/outlets
181 go into bin gate
182 discharge doors
21 conveying arrangements
22 loading ends
25 material containing cars
27 pan feeding chambeies
28 discharging chambeies
29 temporary storage cavity
291 hermatic doors
The batch forming system of 40 amorphous silicon films
The batch forming system of 50 amorphous silicon films
The batch forming system of 60 amorphous silicon films
The batch forming system of 70 amorphous silicon films
99 sheet materials
Embodiment
The batch forming system of amorphous silicon film provided by the present invention includes: at least one p layer forming cavity, and in order to deposition one deck amorphous silicon p type film on a sheet material, but this p layer forming cavity has a hermatic door of On/Off; At least one i layer forming cavity, in order to deposition one deck amorphous silicon i type film on a sheet material, but this i layer forming cavity has a hermatic door of On/Off; At least one n layer forming cavity, in order to deposition one deck amorphous silicon n type film on a sheet material, but this n layer forming cavity has a hermatic door of On/Off; One shares vacuum chamber, links to each other with this p layer forming cavity, this i layer forming cavity and this n layer forming cavity, and the On/Off by those hermatic doors makes the shared vacuum chamber internal insulation of those forming cavity and this/communicate; One conveying arrangement is positioned at this shared vacuum chamber, has a loading end, and this conveying arrangement is movable and make this loading end move to respectively hermatic door the place ahead of this forming cavity respectively; And a material containing car, be positioned on the loading end of this conveying arrangement, the sheet material of carrying plural number, this material containing car can be entered in aforesaid respectively this forming cavity by each sealing door by this loading end, or by respectively withdrawing to this loading end in this forming cavity.Can improve speed of production thus, and can a multi-disc be shaped in a batch mode.
In order to describe technical characterstic of the present invention place in detail, lift following five preferred embodiments and conjunction with figs. explanation as after, wherein:
As shown in Figure 1, the batch forming system 10 of a kind of amorphous silicon film that the present invention's first preferred embodiment is provided, mainly share vacuum chamber 17, a conveying arrangement 21 and a material containing car 25 and formed by a p layer forming cavity 11, two i layer forming cavity 13, a n layer forming cavity 15,, wherein:
This p layer forming cavity 11 deposit an amorphous silicon p type film in order to go up at a sheet material 99 (for example glass substrate), but this p layer forming cavity 11 has a hermatic door 12 of On/Off.
This two i layer forming cavity 13, in order to deposition one amorphous silicon i type film on a sheet material 99, but respectively this i layer forming cavity 13 has a hermatic door 14 of On/Off.
This n layer forming cavity 15, in order to deposition one amorphous silicon n type film on a sheet material 99, but this n layer forming cavity 15 has a hermatic door 16 of On/Off.
Those forming cavity 11,13,15th, according to the sequence arrangement of p, i, i, n, and in present embodiment, those forming cavity 11,13,15th are arranged in a linear, and respectively the hermatic door 12,14,16 of this forming cavity 11,13,15 towards same direction.
Should share vacuum chamber 17, link to each other with this p layer forming cavity 11, this two i layer forming cavity 13 and this n layer forming cavity 15, by those hermatic doors 12,14,16 On/Off makes those forming cavity 11,13,15 and should share vacuum chamber 17 internal insulation/communicate, this shared vacuum chamber 17 has a material inlet/outlet 18 and is isolated from the outside/communicates, and uses for this conveying arrangement 21 or 25 turnover of this material containing car and uses.
This conveying arrangement 21 is a motion chassis, is positioned at this shared vacuum chamber 17, and the top has a loading end 22, and this conveying arrangement 21 is movable and make this loading end 22 move to each sealing door 12,14,16 the place ahead respectively.
This material containing car 25, the sheet material 99 of carrying plural number is positioned on the loading end 22 of this conveying arrangement 21, those sheet materials 99 are erectility, and the preset distance of being separated by, this material containing car 25 can be by this loading end 22 by each sealing door 12,14,16 and enter aforesaid respectively this forming cavity 11, in 13,15, or by this forming cavity 11 respectively, withdraw from 13,15 to this loading end 22.
Mode of operation of the present invention is described as follows:
As shown in Figure 1, a material containing car 25 that will carry full sheet material 99 earlier places on the loading end 22 of this conveying arrangement 21, and this conveying arrangement 21 moved to this p layer forming cavity 11 the place aheads, and sealing door 12 has been opened.
Again as shown in Figure 2, this material containing car 25 is entered in this p layer forming cavity 11, this p layer forming cavity 11 can be carried out the technology of plasma auxiliary chemical vapor deposition, and deposits one deck amorphous silicon p type film of predetermined thickness on those sheet materials 99.
Again as shown in Figure 3, after finishing the technology of amorphous silicon p type film, this material containing car 25 is got back on this conveying arrangement 21 by withdrawing from this p layer forming cavity 11, this conveying arrangement 21 promptly again this material containing car 25 of carrying move to this i layer forming cavity 13, and enter in this i layer forming cavity 13 according to above-mentioned mode, and deposit one deck amorphous silicon i type film (not shown).
Repeat above-mentioned mode, and go out required thin layer, can finish required p-i-n amorphous silicon film at different forming cavity 11,13,15 internal shapings.
Above-mentioned forming cavity 11,13,15, so i layer forming cavity 13 to be provided with two, mainly be because in p-i-n amorphous silicon film technology, the desired thickness of i layer is thicker, need the long period to finish, therefore, the i layer forming cavity 13 more than two or two is set, helps to reduce the stand-by period of other sheet material 99.
Please consult Fig. 4 again, the batch forming system 40 of a kind of amorphous silicon film that the present invention's second preferred embodiment is provided mainly generally is same as aforementioned first embodiment, and difference is:
Arrange in the form of a ring with six forming cavity 11,13,15, and the order that is p, i, i, n, i, i arranges in regular turn, and respectively the hermatic door 12,14,16 of this forming cavity 11,13,15 towards the center of circle that those forming cavity 11,13,15 are surrounded.It is rounded haply to share vacuum chamber 17.This material inlet/outlet 18 is located at this p layer forming cavity 11.
This conveying arrangement 21 is a rotating platform, and end face then is this plummer 22.
Second embodiment is when operation, material containing car 25 is to rotate to the forming cavity 11 that should enter by this plummer 22, before 13,15, enter this forming cavity 11 again, 13, in 15, directly be retracted into again when withdrawing from this conveying arrangement 21, change direction according to these conveying arrangement 21 rotations again and can face another forming cavity 11 again, 13,15.
When input and output material, then be to be undertaken by these material inlet/outlet 18 these p layer forming cavity 11 of turnover.In addition, this material inlet/outlet 18 also can be located at this n layer forming cavity 15, because of the state that situation is analogous to the shown p layer forming cavity 11 of Fig. 4 is set, therefore no longer with icon display and give unnecessary details.
Again, this conveying arrangement 21 also can be a motion chassis, can produce the rotate effect as rotating platform equally.And the form of motion chassis has been shown in earlier figures 1 to Fig. 3, so no longer with the diagram expression.
All the other structures of second embodiment and mode of operation all generally are same as aforementioned first embodiment, hold no longer to give and give unnecessary details.
Again as shown in Figure 5, the batch forming system 50 of a kind of amorphous silicon film that the present invention's the 3rd preferred embodiment is provided mainly generally is same as aforementioned second preferred embodiment, and difference is:
Be provided with one in this p layer forming cavity 11 and go into bin gate 181, and make this p layer forming cavity 11 and the extraneous relation of isolating/communicating; Be provided with a discharge door 182 in this n layer forming cavity 15, and make this n layer forming cavity 15 and the extraneous relation of isolating/communicating.
Thus, when pan feeding, can go into bin gate 181 and enter to this p layer forming cavity 11, then send via this discharge door 182 during discharging by this n layer forming cavity 15 by this.
All the other structures and the mode of operation of this 3rd embodiment all generally are same as aforementioned second embodiment, hold and do not give unnecessary details.
Please consult Fig. 6 again, the batch forming system 60 of a kind of amorphous silicon film that the present invention's the 4th preferred embodiment is provided mainly generally is same as aforementioned second embodiment, and difference is:
Also include: a pan feeding chamber 27, a discharging chamber 28 and a temporary storage cavity 29.
This pan feeding chamber 27 is connected in this p layer forming cavity 11, and is provided with a hermatic door 12 between this p layer forming cavity 11 and this pan feeding chamber 27, and this pan feeding chamber 27 has the relation of isolating with the external world/communicating into bin gate 181.This discharging chamber 28 is connected in this n layer forming cavity 15, and this n layer forming cavity 15 is connected in this n layer forming cavity 15 with this discharging chamber 28, and be provided with a hermatic door 16 between this n layer forming cavity 15 and this discharging chamber 28, this discharging chamber 28 has a discharge door 182 and the relation of isolating with the external world/communicating.
This temporary storage cavity 29 is connected in this shared vacuum chamber 17, and this temporary storage cavity 29 has a hermatic door 291 and the relation of isolating/communicating with this shared vacuum chamber 17.
Thus, when pan feeding, go into bin gate 181 and enter to this pan feeding chamber 27, enter this p layer forming cavity 11 again by this; Then be introduced into to this discharging chamber 28 during discharging, send by this discharge door 182 again by this n layer forming cavity 15.29 of this temporary storage cavity are to be used for temporary this material containing car 25, can be as each forming cavity 11,13, and the buffering that material transports between 15 is alloted use.
All the other structures of the 4th embodiment and mode of operation all generally are same as aforementioned second embodiment, hold and do not give unnecessary details.
Please consult Fig. 7 again, the batch forming system 70 of a kind of amorphous silicon film that the present invention's the 5th preferred embodiment is provided mainly generally is same as aforementioned first embodiment, and difference is:
With five forming cavity 11,13,15, with in twos relatively and a mode that is positioned at side arrange, and the hermatic door 12,14 of relative forming cavity 11,13,15,16 is relative.In addition, be separated by to each other preset distance and can moving through of relative forming cavity 11,13,15 for this conveying arrangement 21.
All the other structures of the 5th embodiment and mode of operation generally are same as aforementioned first embodiment, hold no longer to give and give unnecessary details.
And the 5th embodiment can be reduced the mobile route of this telecontrol equipment 21 by the mode of relative arrangement, reaches the timesaving effect.
Claims (13)
1, a kind of batch forming system of amorphous silicon film includes:
At least one p layer forming cavity, in order to deposition one deck amorphous silicon p type film on a sheet material, but this p layer forming cavity has a hermatic door of On/Off;
At least one i layer forming cavity, in order to deposition one deck amorphous silicon i type film on a sheet material, but this i layer forming cavity has a hermatic door of On/Off;
At least one n layer forming cavity, in order to deposition one deck amorphous silicon n type film on a sheet material, but this n layer forming cavity has a hermatic door of On/Off;
One shares vacuum chamber, links to each other with this p layer forming cavity, this i layer forming cavity and this n layer forming cavity, and the On/Off by those hermatic doors makes the shared vacuum chamber internal insulation of those forming cavity and this/communicate;
One conveying arrangement is positioned at this shared vacuum chamber, has a loading end, and this conveying arrangement is movable and make this loading end move to respectively hermatic door the place ahead of this forming cavity respectively; And
One material containing car is positioned on the loading end of this conveying arrangement, the sheet material of carrying plural number, and this material containing car can be entered in aforesaid respectively this forming cavity by each sealing door by this loading end, or by respectively withdrawing to this loading end in this forming cavity.
2, according to the batch forming system of the described amorphous silicon film of claim 1, wherein: have a p layer forming cavity, two i layer forming cavity and a n layer forming cavity.
3, according to the batch forming system of the described amorphous silicon film of claim 2, wherein: those forming cavity are the sequence arrangement according to p, i, i, n.
4, according to the batch forming system of the described amorphous silicon film of claim 2, wherein: those forming cavity are to be arranged in a linear, and respectively the hermatic door of this forming cavity towards same direction.
5, according to the batch forming system of the described amorphous silicon film of claim 2, wherein: those forming cavity are to arrange in the form of a ring, and respectively the hermatic door of this forming cavity towards the center of circle that those forming cavity surrounded.
6, according to the batch forming system of the described amorphous silicon film of claim 5, wherein: this conveying arrangement is a rotating platform.
7, according to the batch forming system of the described amorphous silicon film of claim 2, wherein: those forming cavity are to arrange relatively in twos, and the hermatic door of relative forming cavity is relative.
8, according to the batch forming system of claim 4 or 5 or 7 described amorphous silicon films, wherein: this conveying arrangement is a motion chassis, and this loading end is located at the top of this conveying arrangement.
9, according to the batch forming system of the described amorphous silicon film of claim 1, wherein: the sheet material in this material containing car is erectility, and the preset distance of being separated by.
10, according to the batch forming system of the described amorphous silicon film of claim 1, wherein include: a material inlet/outlet, this material inlet/outlet be located at this shared vacuum chamber, this p layer forming cavity and this n layer forming cavity three one of them.
11, according to the batch forming system of the described amorphous silicon film of claim 1, wherein include: one goes into a bin gate and a discharge door, this goes into that bin gate is located at this p layer forming cavity and the relation of isolating with the external world/communicating, and this discharge door is located at this n layer forming cavity and the relation of isolating with the external world/communicating.
12, according to the batch forming system of the described amorphous silicon film of claim 1, wherein include: a pan feeding chamber and a discharging chamber, this pan feeding chamber is connected in this p layer forming cavity, and be provided with a hermatic door between this p layer forming cavity and this pan feeding chamber, this pan feeding chamber has the relation of isolating with the external world/communicating into bin gate; This discharging chamber is connected in this n layer forming cavity, and is provided with a hermatic door between this n layer forming cavity and this discharging chamber, and this discharging chamber has a discharge door and the relation of isolating with the external world/communicating.
13, according to the batch forming system of the described amorphous silicon film of claim 1, wherein include: the temporary storage cavity more than be connected in this shared vacuum chamber, and this temporary storage cavity has a hermatic door and the relation of isolating/communicating with this shared vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100026580A CN101488443A (en) | 2008-01-14 | 2008-01-14 | Batch forming system of amorphous silicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100026580A CN101488443A (en) | 2008-01-14 | 2008-01-14 | Batch forming system of amorphous silicon |
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| CN101488443A true CN101488443A (en) | 2009-07-22 |
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| CNA2008100026580A Pending CN101488443A (en) | 2008-01-14 | 2008-01-14 | Batch forming system of amorphous silicon |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817011A (en) * | 2012-09-06 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
-
2008
- 2008-01-14 CN CNA2008100026580A patent/CN101488443A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817011A (en) * | 2012-09-06 | 2012-12-12 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
| CN102817011B (en) * | 2012-09-06 | 2014-12-31 | 英利能源（中国）有限公司 | Silicon nitride film deposition device and deposition method |
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Open date: 20090722 |