CN102054911A - 发光二极管芯片及其制作方法和具有该芯片的发光二极管 - Google Patents
发光二极管芯片及其制作方法和具有该芯片的发光二极管 Download PDFInfo
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- CN102054911A CN102054911A CN2009101099475A CN200910109947A CN102054911A CN 102054911 A CN102054911 A CN 102054911A CN 2009101099475 A CN2009101099475 A CN 2009101099475A CN 200910109947 A CN200910109947 A CN 200910109947A CN 102054911 A CN102054911 A CN 102054911A
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- light
- emitting diode
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- backlight unit
- diode chip
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000005516 engineering process Methods 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 235000011007 phosphoric acid Nutrition 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 12
- 238000000605 extraction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 109
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101099475A CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
PCT/CN2010/075760 WO2011050640A1 (en) | 2009-10-29 | 2010-08-06 | Led, led chip and method of forming the same |
US13/457,955 US20120261702A1 (en) | 2009-10-29 | 2012-04-27 | Led, led chip and method of forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101099475A CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102054911A true CN102054911A (zh) | 2011-05-11 |
CN102054911B CN102054911B (zh) | 2013-03-13 |
Family
ID=43921300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009101099475A Active CN102054911B (zh) | 2009-10-29 | 2009-10-29 | 发光二极管芯片及其制作方法和具有该芯片的发光二极管 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20120261702A1 (zh) |
CN (1) | CN102054911B (zh) |
WO (1) | WO2011050640A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20120082715A (ko) * | 2011-01-14 | 2012-07-24 | 삼성엘이디 주식회사 | 반도체 발광소자 및 그 제조방법 |
CN102214751B (zh) * | 2011-06-07 | 2012-10-10 | 晶科电子(广州)有限公司 | 一种垂直结构的发光器件及其制造方法 |
WO2013039344A2 (ko) | 2011-09-16 | 2013-03-21 | 서울옵토디바이스(주) | 발광 다이오드 및 그것을 제조하는 방법 |
TWI597863B (zh) * | 2013-10-22 | 2017-09-01 | 晶元光電股份有限公司 | 發光元件及其製造方法 |
CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
CN105914275B (zh) * | 2016-06-22 | 2018-04-27 | 天津三安光电有限公司 | 倒装发光二极管及其制作方法 |
KR102427640B1 (ko) * | 2017-12-19 | 2022-08-01 | 삼성전자주식회사 | 자외선 반도체 발광소자 |
CN108933188A (zh) * | 2018-09-06 | 2018-12-04 | 武汉华星光电技术有限公司 | 发光二极管及使用所述发光二极管的背光模组 |
CN113436983A (zh) * | 2020-03-19 | 2021-09-24 | 京东方科技集团股份有限公司 | μLED基板及制备方法、EL检测方法及装置 |
CN114388672B (zh) * | 2021-11-30 | 2023-06-09 | 华灿光电(浙江)有限公司 | 微型发光二极管芯片及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
JP3968566B2 (ja) * | 2002-03-26 | 2007-08-29 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
EP3699963A1 (en) * | 2003-08-19 | 2020-08-26 | Nichia Corporation | Semiconductor light emitting diode and method of manufacturing its substrate |
CN100356592C (zh) * | 2004-01-06 | 2007-12-19 | 元砷光电科技股份有限公司 | 发光二极管及其制造方法 |
TWI281758B (en) * | 2004-04-28 | 2007-05-21 | Showa Denko Kk | Transparent positive electrode |
CN1993835A (zh) * | 2004-06-14 | 2007-07-04 | 三菱电线工业株式会社 | 氮化物半导体发光器件 |
KR100649496B1 (ko) * | 2004-09-14 | 2006-11-24 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
US20060138443A1 (en) * | 2004-12-23 | 2006-06-29 | Iii-N Technology, Inc. | Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes |
TWI248691B (en) * | 2005-06-03 | 2006-02-01 | Formosa Epitaxy Inc | Light emitting diode and method of fabricating thereof |
JP4462249B2 (ja) * | 2005-09-22 | 2010-05-12 | ソニー株式会社 | 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系iii−v族化合物半導体の成長方法 |
CN2867600Y (zh) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | 发光二极管封装结构 |
CN100585885C (zh) * | 2006-01-27 | 2010-01-27 | 杭州士兰明芯科技有限公司 | 蓝宝石衬底粗糙化的发光二极管及其制造方法 |
JP4637781B2 (ja) * | 2006-03-31 | 2011-02-23 | 昭和電工株式会社 | GaN系半導体発光素子の製造方法 |
JP5082752B2 (ja) * | 2006-12-21 | 2012-11-28 | 日亜化学工業株式会社 | 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子 |
CN101232060A (zh) * | 2007-01-26 | 2008-07-30 | 广镓光电股份有限公司 | 固态发光元件及其制作方法 |
JP4232837B2 (ja) * | 2007-03-28 | 2009-03-04 | 住友電気工業株式会社 | 窒化物半導体発光素子を作製する方法 |
US8101447B2 (en) * | 2007-12-20 | 2012-01-24 | Tekcore Co., Ltd. | Light emitting diode element and method for fabricating the same |
US8030666B2 (en) * | 2008-04-16 | 2011-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III nitride epitaxial layer on silicon substrate |
-
2009
- 2009-10-29 CN CN2009101099475A patent/CN102054911B/zh active Active
-
2010
- 2010-08-06 WO PCT/CN2010/075760 patent/WO2011050640A1/en active Application Filing
-
2012
- 2012-04-27 US US13/457,955 patent/US20120261702A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2011050640A1 (en) | 2011-05-05 |
US20120261702A1 (en) | 2012-10-18 |
CN102054911B (zh) | 2013-03-13 |
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Effective date of registration: 20200113 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 518118 Pingshan Road, Pingshan Town, Shenzhen, Guangdong, No. 3001, No. Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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