CN102037164B - 在低度偏轴碳化硅基片上的外延生长及利用其制造的半导体器件 - Google Patents
在低度偏轴碳化硅基片上的外延生长及利用其制造的半导体器件 Download PDFInfo
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- CN102037164B CN102037164B CN200980118597.7A CN200980118597A CN102037164B CN 102037164 B CN102037164 B CN 102037164B CN 200980118597 A CN200980118597 A CN 200980118597A CN 102037164 B CN102037164 B CN 102037164B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/055,725 US8221546B2 (en) | 2008-03-26 | 2008-03-26 | Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby |
US12/055,725 | 2008-03-26 | ||
PCT/US2009/036882 WO2009120505A1 (en) | 2008-03-26 | 2009-03-12 | Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102037164A CN102037164A (zh) | 2011-04-27 |
CN102037164B true CN102037164B (zh) | 2013-08-14 |
Family
ID=41114279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980118597.7A Expired - Fee Related CN102037164B (zh) | 2008-03-26 | 2009-03-12 | 在低度偏轴碳化硅基片上的外延生长及利用其制造的半导体器件 |
Country Status (9)
Country | Link |
---|---|
US (2) | US8221546B2 (zh) |
EP (1) | EP2271794A4 (zh) |
JP (1) | JP5632360B2 (zh) |
KR (1) | KR20100139068A (zh) |
CN (1) | CN102037164B (zh) |
AU (1) | AU2009228841A1 (zh) |
CA (1) | CA2718757A1 (zh) |
TW (1) | TW201005136A (zh) |
WO (1) | WO2009120505A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8221546B2 (en) | 2008-03-26 | 2012-07-17 | Ss Sc Ip, Llc | Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby |
US8436366B2 (en) * | 2009-04-15 | 2013-05-07 | Sumitomo Electric Industries, Ltd. | Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device |
JP5696543B2 (ja) * | 2011-03-17 | 2015-04-08 | セイコーエプソン株式会社 | 半導体基板の製造方法 |
KR101897062B1 (ko) * | 2012-05-31 | 2018-09-12 | 엘지이노텍 주식회사 | 탄화규소 에피 웨이퍼 및 이의 제조 방법 |
JP6019938B2 (ja) | 2012-08-30 | 2016-11-02 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
JP2016507001A (ja) * | 2012-12-21 | 2016-03-07 | プラサド ナーハー ガジル | セラミック薄膜の低温堆積方法 |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US11721547B2 (en) * | 2013-03-14 | 2023-08-08 | Infineon Technologies Ag | Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
WO2015005064A1 (ja) * | 2013-07-09 | 2015-01-15 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
JP6584253B2 (ja) * | 2015-09-16 | 2019-10-02 | ローム株式会社 | SiCエピタキシャルウェハ、SiCエピタキシャルウェハの製造装置、SiCエピタキシャルウェハの製造方法、および半導体装置 |
CN106098890B (zh) * | 2016-06-21 | 2019-04-09 | 吉林大学 | 一种基于碳面SiC衬底的垂直结构氮极性GaN基绿光LED芯片及其制备方法 |
US20240133077A1 (en) * | 2022-10-07 | 2024-04-25 | Mainstream Engineering Corporation | CONTROLLED SURFACE CHEMISTRY FOR POLYTYPIC AND MICROSTRUCTURAL SELECTIVE GROWTH ON HEXAGONAL SiC SUBSTRATES |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237272A (zh) * | 1997-08-27 | 1999-12-01 | 松下电器产业株式会社 | 碳化硅衬底及其制造方法以及使用碳化硅衬底的半导体元件 |
EP1619276A2 (en) * | 2004-07-19 | 2006-01-25 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
US4824711A (en) * | 1987-01-29 | 1989-04-25 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Ceramic honeycomb structures and method thereof |
US4912064A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon |
US5011549A (en) * | 1987-10-26 | 1991-04-30 | North Carolina State University | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon |
US5248385A (en) * | 1991-06-12 | 1993-09-28 | The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers |
US6121633A (en) | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
US5915194A (en) * | 1997-07-03 | 1999-06-22 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
JPH11162850A (ja) * | 1997-08-27 | 1999-06-18 | Matsushita Electric Ind Co Ltd | 炭化珪素基板およびその製造方法、並びに炭化珪素基板を用いた半導体素子 |
JP3508519B2 (ja) * | 1997-11-28 | 2004-03-22 | 松下電器産業株式会社 | エピタキシャル成長装置およびエピタキシャル成長法 |
US6461944B2 (en) * | 2001-02-07 | 2002-10-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Methods for growth of relatively large step-free SiC crystal surfaces |
JP3845563B2 (ja) * | 2001-09-10 | 2006-11-15 | 株式会社東芝 | 炭化珪素膜のcvd方法、cvd装置及びcvd装置用サセプター |
US6488771B1 (en) * | 2001-09-25 | 2002-12-03 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for growing low-defect single crystal heteroepitaxial films |
US7247513B2 (en) * | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
JP4139306B2 (ja) * | 2003-10-02 | 2008-08-27 | 東洋炭素株式会社 | 縦型ホットウォールCVDエピタキシャル装置及びSiCエピタキシャル成長方法 |
US7230274B2 (en) | 2004-03-01 | 2007-06-12 | Cree, Inc | Reduction of carrot defects in silicon carbide epitaxy |
JP2006321696A (ja) * | 2005-05-20 | 2006-11-30 | Hitachi Cable Ltd | 炭化珪素単結晶の製造方法 |
JP4786223B2 (ja) * | 2005-05-24 | 2011-10-05 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
JP5068009B2 (ja) | 2005-09-14 | 2012-11-07 | 三菱電機株式会社 | 炭化ケイ素半導体装置 |
JP4769541B2 (ja) | 2005-10-27 | 2011-09-07 | トヨタ自動車株式会社 | 半導体材料の製造方法 |
US7589025B2 (en) * | 2005-12-02 | 2009-09-15 | Rohm And Haas Electronic Materials Llc | Semiconductor processing |
JP4706565B2 (ja) * | 2006-06-08 | 2011-06-22 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
JP4946202B2 (ja) * | 2006-06-26 | 2012-06-06 | 日立金属株式会社 | 炭化珪素半導体エピタキシャル基板の製造方法。 |
EP2003696B1 (en) * | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
US8221546B2 (en) * | 2008-03-26 | 2012-07-17 | Ss Sc Ip, Llc | Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby |
-
2008
- 2008-03-26 US US12/055,725 patent/US8221546B2/en active Active
-
2009
- 2009-03-12 WO PCT/US2009/036882 patent/WO2009120505A1/en active Application Filing
- 2009-03-12 KR KR1020107023746A patent/KR20100139068A/ko active IP Right Grant
- 2009-03-12 CN CN200980118597.7A patent/CN102037164B/zh not_active Expired - Fee Related
- 2009-03-12 JP JP2011501892A patent/JP5632360B2/ja not_active Expired - Fee Related
- 2009-03-12 AU AU2009228841A patent/AU2009228841A1/en not_active Abandoned
- 2009-03-12 EP EP20090724153 patent/EP2271794A4/en not_active Withdrawn
- 2009-03-12 CA CA2718757A patent/CA2718757A1/en not_active Abandoned
- 2009-03-19 TW TW098108906A patent/TW201005136A/zh unknown
-
2012
- 2012-06-15 US US13/524,274 patent/US8591651B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237272A (zh) * | 1997-08-27 | 1999-12-01 | 松下电器产业株式会社 | 碳化硅衬底及其制造方法以及使用碳化硅衬底的半导体元件 |
EP1619276A2 (en) * | 2004-07-19 | 2006-01-25 | Norstel AB | Homoepitaxial growth of SiC on low off-axis SiC wafers |
Also Published As
Publication number | Publication date |
---|---|
US8591651B2 (en) | 2013-11-26 |
US20120248463A1 (en) | 2012-10-04 |
JP5632360B2 (ja) | 2014-11-26 |
TW201005136A (en) | 2010-02-01 |
CN102037164A (zh) | 2011-04-27 |
EP2271794A1 (en) | 2011-01-12 |
US8221546B2 (en) | 2012-07-17 |
KR20100139068A (ko) | 2010-12-31 |
CA2718757A1 (en) | 2009-10-01 |
EP2271794A4 (en) | 2011-07-27 |
JP2011515325A (ja) | 2011-05-19 |
AU2009228841A1 (en) | 2009-10-01 |
WO2009120505A1 (en) | 2009-10-01 |
US20090242899A1 (en) | 2009-10-01 |
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Owner name: SS SC IP, LLC Free format text: FORMER OWNER: SEMISOUTH LAB INC. Effective date: 20120104 |
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