CN102017053B - 投影透镜装置 - Google Patents
投影透镜装置 Download PDFInfo
- Publication number
- CN102017053B CN102017053B CN200980114873.2A CN200980114873A CN102017053B CN 102017053 B CN102017053 B CN 102017053B CN 200980114873 A CN200980114873 A CN 200980114873A CN 102017053 B CN102017053 B CN 102017053B
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- CN
- China
- Prior art keywords
- bundle
- plate
- electronics
- array
- projecting lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/121—Lenses electrostatic characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3159408P | 2008-02-26 | 2008-02-26 | |
US61/031,594 | 2008-02-26 | ||
PCT/EP2009/052264 WO2009106560A1 (en) | 2008-02-26 | 2009-02-26 | Projection lens arrangement |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102017053A CN102017053A (zh) | 2011-04-13 |
CN102017053B true CN102017053B (zh) | 2014-04-02 |
Family
ID=40599969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980114873.2A Active CN102017053B (zh) | 2008-02-26 | 2009-02-26 | 投影透镜装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8089056B2 (zh) |
EP (1) | EP2260499B1 (zh) |
JP (1) | JP5619629B2 (zh) |
KR (1) | KR101570974B1 (zh) |
CN (1) | CN102017053B (zh) |
TW (1) | TWI377593B (zh) |
WO (1) | WO2009106560A1 (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3144955A1 (en) | 2009-05-20 | 2017-03-22 | Mapper Lithography IP B.V. | Method for exposing a wafer |
KR101614460B1 (ko) | 2009-05-20 | 2016-04-21 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래피 시스템을 위한 패턴 데이터 전환 |
KR20120098627A (ko) * | 2009-09-18 | 2012-09-05 | 마퍼 리쏘그라피 아이피 비.브이. | 다중 빔을 갖는 대전 입자 광학 시스템 |
CN103238202B (zh) * | 2010-09-28 | 2016-11-09 | 以色列实用材料有限公司 | 粒子光学***及布置,以及用于这种***及布置的粒子光学组件 |
US8884255B2 (en) | 2010-11-13 | 2014-11-11 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
WO2012062854A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Lithography system and method of refracting |
US9305747B2 (en) | 2010-11-13 | 2016-04-05 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
JP5669636B2 (ja) * | 2011-03-15 | 2015-02-12 | キヤノン株式会社 | 荷電粒子線レンズおよびそれを用いた露光装置 |
US9244726B2 (en) | 2011-04-22 | 2016-01-26 | Mapper Lithography Ip B.V. | Network architecture for lithography machine cluster |
NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
TWI486723B (zh) | 2011-04-28 | 2015-06-01 | Mapper Lithography Ip Bv | 在微影系統中處理基板的方法 |
NL2007392C2 (en) * | 2011-09-12 | 2013-03-13 | Mapper Lithography Ip Bv | Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly. |
JP2012237855A (ja) * | 2011-05-11 | 2012-12-06 | Sony Corp | レンズモジュール、撮像装置、電子機器、およびレンズモジュールの駆動方法 |
NL2006868C2 (en) | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
JP5859778B2 (ja) | 2011-09-01 | 2016-02-16 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
US9224580B2 (en) | 2011-09-28 | 2015-12-29 | Mapper Litohgraphy Ip B.V. | Plasma generator |
JP5813123B2 (ja) * | 2011-09-30 | 2015-11-17 | 京セラ株式会社 | 静電レンズおよびそれを用いた荷電粒子ビーム装置 |
TWI489222B (zh) * | 2012-02-16 | 2015-06-21 | Nuflare Technology Inc | Electron beam rendering device and electron beam rendering method |
KR101902469B1 (ko) * | 2012-03-08 | 2018-09-28 | 마퍼 리쏘그라피 아이피 비.브이. | 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 |
RU2642494C2 (ru) | 2012-03-20 | 2018-01-25 | МЭППЕР ЛИТОГРАФИ АйПи Б.В. | Агрегат и способ переноса радикалов |
NL2010759C2 (en) | 2012-05-14 | 2015-08-25 | Mapper Lithography Ip Bv | Modulation device and power supply arrangement. |
US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
CN107359101B (zh) | 2012-05-14 | 2019-07-12 | Asml荷兰有限公司 | 带电粒子射束产生器中的高电压屏蔽和冷却 |
US10586625B2 (en) | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
KR101417603B1 (ko) * | 2013-02-28 | 2014-07-09 | 선문대학교 산학협력단 | 더블 어라인너를 구비한 초소형 컬럼 |
US9922801B2 (en) | 2013-08-23 | 2018-03-20 | Mapper Lithography Ip B.V. | Drying apparatus for use in a lithography system |
WO2015029200A1 (ja) * | 2013-08-30 | 2015-03-05 | 株式会社日立製作所 | 荷電粒子線レンズモジュール及びそれを備えた荷電粒子線装置 |
CN108962708A (zh) | 2013-11-14 | 2018-12-07 | 迈普尔平版印刷Ip有限公司 | 电极堆栈布置 |
US20150206740A1 (en) | 2014-01-22 | 2015-07-23 | Mapper Lithography Ip B.V | Electrical charge regulation for a semiconductor substrate during charged particle beam processing |
JP6653125B2 (ja) * | 2014-05-23 | 2020-02-26 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
KR20170084240A (ko) | 2014-11-14 | 2017-07-19 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법 |
US9484188B2 (en) | 2015-03-11 | 2016-11-01 | Mapper Lithography Ip B.V. | Individual beam pattern placement verification in multiple beam lithography |
US10096450B2 (en) | 2015-12-28 | 2018-10-09 | Mapper Lithography Ip B.V. | Control system and method for lithography apparatus |
US9981293B2 (en) | 2016-04-21 | 2018-05-29 | Mapper Lithography Ip B.V. | Method and system for the removal and/or avoidance of contamination in charged particle beam systems |
NL2022156B1 (en) | 2018-12-10 | 2020-07-02 | Asml Netherlands Bv | Plasma source control circuit |
CN115917698A (zh) | 2020-06-10 | 2023-04-04 | Asml荷兰有限公司 | 带电粒子设备的可更换模块 |
EP3937205A1 (en) * | 2020-07-06 | 2022-01-12 | ASML Netherlands B.V. | Charged-particle multi-beam column, charged-particle multi-beam column array, inspection method |
EP4199027A1 (en) * | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Charged-particle apparatus, multi-device apparatus, method of using charged-particle apparatus and control method |
EP4202969A1 (en) * | 2021-12-23 | 2023-06-28 | ASML Netherlands B.V. | Electron-optical device with compensation for variations in a property of sub-beams |
WO2023117277A1 (en) * | 2021-12-23 | 2023-06-29 | Asml Netherlands B.V. | Electron-optical device, method of compensating for variations in a property of sub-beams |
Citations (4)
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US4419182A (en) * | 1981-02-27 | 1983-12-06 | Veeco Instruments Inc. | Method of fabricating screen lens array plates |
US4465934A (en) * | 1981-01-23 | 1984-08-14 | Veeco Instruments Inc. | Parallel charged particle beam exposure system |
CN1708826A (zh) * | 2002-10-30 | 2005-12-14 | 迈普尔平版印刷Ip有限公司 | 电子束曝光*** |
CN101084567A (zh) * | 2004-11-17 | 2007-12-05 | Nfab有限公司 | 聚焦掩模 |
Family Cites Families (14)
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JPS6298544A (ja) * | 1985-10-25 | 1987-05-08 | Hitachi Ltd | 荷電粒子線装置 |
US4687940A (en) * | 1986-03-20 | 1987-08-18 | Hughes Aircraft Company | Hybrid focused-flood ion beam system and method |
US4859856A (en) * | 1988-01-11 | 1989-08-22 | International Business Machines Corporation | Telecentric sub-field deflection with vail |
JP2851213B2 (ja) * | 1992-09-28 | 1999-01-27 | 株式会社東芝 | 走査電子顕微鏡 |
US5393985A (en) * | 1992-11-26 | 1995-02-28 | Shimadzu Corporation | Apparatus for focusing an ion beam |
WO2001039243A1 (en) * | 1999-11-23 | 2001-05-31 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
JP4647820B2 (ja) * | 2001-04-23 | 2011-03-09 | キヤノン株式会社 | 荷電粒子線描画装置、および、デバイスの製造方法 |
AU2002342349A1 (en) | 2001-11-07 | 2003-05-19 | Applied Materials, Inc. | Maskless printer using photoelectric conversion of a light beam array |
JP2005032837A (ja) * | 2003-07-08 | 2005-02-03 | Canon Inc | 荷電粒子描画方法及び該方法を用いたデバイス製造方法 |
US7075093B2 (en) * | 2004-05-12 | 2006-07-11 | Gorski Richard M | Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation |
US8173978B2 (en) | 2004-07-05 | 2012-05-08 | Cebt Co., Ltd | Method for controlling electron beam in multi-microcolumn and multi-microcolumn using the same |
JP2007019192A (ja) * | 2005-07-06 | 2007-01-25 | Canon Inc | 荷電ビームレンズ、及び荷電ビーム露光装置 |
EP1753010B1 (en) | 2005-08-09 | 2012-12-05 | Carl Zeiss SMS GmbH | Particle-optical system |
US8134135B2 (en) | 2006-07-25 | 2012-03-13 | Mapper Lithography Ip B.V. | Multiple beam charged particle optical system |
-
2009
- 2009-02-26 CN CN200980114873.2A patent/CN102017053B/zh active Active
- 2009-02-26 US US12/393,049 patent/US8089056B2/en active Active
- 2009-02-26 WO PCT/EP2009/052264 patent/WO2009106560A1/en active Application Filing
- 2009-02-26 JP JP2010548104A patent/JP5619629B2/ja active Active
- 2009-02-26 TW TW98106092A patent/TWI377593B/zh active
- 2009-02-26 EP EP09715482.7A patent/EP2260499B1/en active Active
- 2009-02-26 KR KR1020107021468A patent/KR101570974B1/ko active IP Right Grant
-
2011
- 2011-11-25 US US13/304,427 patent/US9105439B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4465934A (en) * | 1981-01-23 | 1984-08-14 | Veeco Instruments Inc. | Parallel charged particle beam exposure system |
US4419182A (en) * | 1981-02-27 | 1983-12-06 | Veeco Instruments Inc. | Method of fabricating screen lens array plates |
CN1708826A (zh) * | 2002-10-30 | 2005-12-14 | 迈普尔平版印刷Ip有限公司 | 电子束曝光*** |
CN101084567A (zh) * | 2004-11-17 | 2007-12-05 | Nfab有限公司 | 聚焦掩模 |
Also Published As
Publication number | Publication date |
---|---|
EP2260499B1 (en) | 2016-11-30 |
KR101570974B1 (ko) | 2015-11-23 |
JP5619629B2 (ja) | 2014-11-05 |
US20120061583A1 (en) | 2012-03-15 |
EP2260499A1 (en) | 2010-12-15 |
JP2011513905A (ja) | 2011-04-28 |
US20090212229A1 (en) | 2009-08-27 |
US9105439B2 (en) | 2015-08-11 |
KR20100132509A (ko) | 2010-12-17 |
US8089056B2 (en) | 2012-01-03 |
TW200952022A (en) | 2009-12-16 |
WO2009106560A1 (en) | 2009-09-03 |
CN102017053A (zh) | 2011-04-13 |
TWI377593B (en) | 2012-11-21 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: M * J-J * Weilan Inventor after: Kampherbeek Bert Jan Inventor after: Alexander H. V Van Wien Inventor after: Kruit Pieter Inventor after: Steenbrink Stijn Willem Herman Inventor before: Wieland Jan Jaco Inventor before: Kampherbeek Bert Jan Inventor before: Van Veen Alexander Hendrik Vincent Inventor before: Kruit Pieter Inventor before: Steenbrink Stijn Willem Herman |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: JACO WIELAND JAN JAN KAMPHERBEEK BERT VIN VEEN ALEXANDER HENDRIK VAN PIETER KRUIT HERMAN STEENBRINK STIJN WILLEM TO: JAN-JACO WIELAND MARCO JAN KAMPHERBEEK BERT VIN VEEN ALEXANDER HENDRIK VAN PIETER KRUIT HERMAN STEENBRINK STIJN WILLEM |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190428 Address after: Holland Weide Eindhoven Patentee after: ASML Holland Co., Ltd. Address before: About Holland Patentee before: Mapper Lithography IP B. V. |