CN101962748B - Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology - Google Patents
Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology Download PDFInfo
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- CN101962748B CN101962748B CN 201010522808 CN201010522808A CN101962748B CN 101962748 B CN101962748 B CN 101962748B CN 201010522808 CN201010522808 CN 201010522808 CN 201010522808 A CN201010522808 A CN 201010522808A CN 101962748 B CN101962748 B CN 101962748B
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Abstract
The invention relates to a method for plating a conductive film on the surface of polytetrafluoroethylene by adopting an arc ion plating technology, belonging to the technical field of surface engineering. In the method, the conductive film is plated on the surface of polytetrafluoroethylene by sequentially adopting the methods of heating a workpiece, cleaning with an ion beam and plating a transition layer by utilizing an arc ion plating technology. The method comprises the following steps of: putting a polytetrafluoroethylene workpiece into a vacuum chamber and heating; introducing a mixed gas of Ar and O2; opening an ion source to carry out ion beam cleaning on the polytetrafluoroethylene workpiece; closing the ion source and a gas supply system and opening a Cr or NiCr arc source to plate a Cr or NiCr transition layer; closing the Cr or NiCr arc source; applying pulsed bias voltage; and opening an Al, Cu or Au arc source to plate an Al, Cu or Au conductive film. The invention has the advantages of dense film, firm attachment, controllable thickness and realization of film plating on a complicated curve workpiece in the aspect of plating the metal conductive film on the surface of the polytetrafluoroethylene and achieves the engineering application level.
Description
Technical field
The present invention relates to adopt the method for arc ion plating (aip) at ptfe surface plating conductive film, is exactly that the method at ptfe surface arc ion plating conductive film belongs to field of surface engineering technique in order to make microstrip circuit promptly.
Background technology
Because matching is poor between tetrafluoroethylene and metallic substance, prepare metallic film at ptfe surface and have great difficulty, therefore less relatively about the research of ptfe surface vacuum metallization film, the research of especially adopting arc ion plating (aip) to carry out tetrafluoroethylene substrate surface plated film does not appear in the newspapers.The present invention utilizes heated parts, ionic fluid to clean and plate technique means such as transition layer, has effectively improved conductive film sticking power, has solved the technical barrier for preparing metallic film at ptfe surface.
Summary of the invention
The objective of the invention is in order to solve the problem of matching difference between tetrafluoroethylene and metallic substance, propose to adopt the method for arc ion plating (aip) at ptfe surface plating conductive film, utilize the adhesive force advantages of higher that arc ion plating (aip) has the ion energy height, ionization level is high and prepare exactly, adopt arc ion plating (aip) that tetrafluoroethylene substrate surface plated film is studied, particularly clean, improved the activity of ptfe surface by heating and ionic fluid; Simultaneously, the plating transition layer has increased the matching of tetrafluoroethylene and conductive film, thereby improves the sticking power of ptfe surface conductive film.
The objective of the invention is to be achieved through the following technical solutions.
Employing arc ion plating (aip) of the present invention is in the method for ptfe surface plating conductive film, utilize arc ion plating (aip), the method that adopts heated parts, ionic fluid to clean and plate transition layer successively, at ptfe surface plating conductive film, its concrete steps are:
1) the tetrafluoroethylene workpiece is put in the vacuum chamber, vacuumized then, vacuum tightness≤5 * 10
-3A, the hold-time is not less than 2h, then the tetrafluoroethylene workpiece is heated to 100～150 ℃;
2) open airing system, import Ar and O in the vacuum chamber in step 1)
2Mixed gas, Ar and O
2Volume ratio be 1: 1, keeping vacuum tightness is 2 * 10
-2Pa～5 * 10
-2Pa; Open ion source, the setting operating voltage is 3.0kV～4.0kV, the tetrafluoroethylene workpiece is carried out ionic fluid clean 30min～50min;
3) close ion source and airing system, open Cr or NiCr arc source, the working current of setting Cr or NiCr arc source is 60～80A, plating Cr or NiCr transition layer 10min～30min;
4) close Cr or NiCr arc source; On the tetrafluoroethylene workpiece, add-80V～-pulsed bias of 200V, the pulsed bias frequency is 1kHz～10kHz, the pulsed bias dutycycle is 10%～20%; Open Al, Cu or Au arc source, the discharging current of setting Al, Cu or Au arc source is 60～80A, plating Al, Cu or Au conductive film 120min～200min.
Beneficial effect
The present invention has film densification, adhere firmly, thickness homogeneous and controllable and can realize advantages such as complex-curved workpiece plated film at ptfe surface metallizing conductive film, has reached the engineering application level.
Embodiment
Embodiment 1
Adopt the method for arc ion plating (aip), utilize arc ion plating (aip) at ptfe surface plating conductive film, the method that adopts heated parts, ionic fluid to clean and plate transition layer successively, at ptfe surface plating conductive film, its concrete steps are:
1) the tetrafluoroethylene workpiece is put in the vacuum chamber, vacuumized then, vacuum tightness≤5 * 10
-3Pa, the hold-time is 2h, then the tetrafluoroethylene workpiece is heated to 120 ℃;
2) open airing system, import Ar and O in the vacuum chamber in step 1)
2Mixed gas, Ar and O
2Volume ratio be 1: 1, keeping vacuum tightness is 3 * 10
-2Pa; Open ion source, the setting operating voltage is 4.0kV, the tetrafluoroethylene workpiece is carried out ionic fluid clean 30min;
3) close ion source and airing system, open the Cr arc source, the working current of setting the Cr arc source is 60A, plating Cr transition layer 20min;
4) close the Cr arc source; Add on the tetrafluoroethylene workpiece-pulsed bias of 150V, the pulsed bias frequency is 5kHz, and the pulsed bias dutycycle is 10%; Open the Al arc source, the discharging current of setting the Al arc source is 70A, plating Al conductive film 120min, and finally prepd aluminium conductive film thickness is 5 μ m.
Embodiment 2
Adopt the method for arc ion plating (aip), utilize arc ion plating (aip) at ptfe surface plating conductive film, the method that adopts heated parts, ionic fluid to clean and plate transition layer successively, at ptfe surface plating conductive film, its concrete steps are:
1) the tetrafluoroethylene workpiece is put in the vacuum chamber, vacuumized then, vacuum tightness≤5 * 10
-3Pa, the hold-time is 3h, then the tetrafluoroethylene workpiece is heated to 150 ℃;
2) open airing system, import Ar and O in the vacuum chamber in step 1)
2Mixed gas, Ar and O
2Volume ratio be 1: 1, keeping vacuum tightness is 5 * 10
-2Pa; Open ion source, the setting operating voltage is 3.0kV, the tetrafluoroethylene workpiece is carried out ionic fluid clean 40minn;
3) close ion source and airing system, open the NiCr arc source, the working current of setting the NiCr arc source is 80A, plating NiCr transition layer 10min;
4) close the NiCr arc source; Add on the tetrafluoroethylene workpiece-pulsed bias of 100V, the pulsed bias frequency is 2kHz, and the pulsed bias dutycycle is 20%; Open the Cu arc source, the discharging current of setting the Cu arc source is 80A, plating Cu conductive film 150min, and finally prepd copper conductive film thickness is 4 μ m.
Embodiment 3
Adopt the method for arc ion plating (aip), utilize arc ion plating (aip) at ptfe surface plating conductive film, the method that adopts heated parts, ionic fluid to clean and plate transition layer successively, at ptfe surface plating conductive film, its concrete steps are:
1) the tetrafluoroethylene workpiece is put in the vacuum chamber, vacuumized then, vacuum tightness≤5 * 10
-3Pa, the hold-time is 2h, then the tetrafluoroethylene workpiece is heated to 130 ℃;
2) open airing system, import Ar and O in the vacuum chamber in step 1)
2Mixed gas, Ar and O
2Volume ratio be 1: 1, keeping vacuum tightness is 4 * 10
-2Pa; Open ion source, the setting operating voltage is 3.5kV, the tetrafluoroethylene workpiece is carried out ionic fluid clean 30min;
3) close ion source and airing system, open the NiCr arc source, the working current of setting the NiCr arc source is 70A, plating NiCr transition layer 25min;
4) close the NiCr arc source; Add on the tetrafluoroethylene workpiece-pulsed bias of 110V, the pulsed bias frequency is 3kHz, and the pulsed bias dutycycle is 15%; Open the Au arc source, the discharging current of setting the Au arc source is 75A, plating Au conductive film 200min, and finally prepd golden conductive film thickness is 4 μ m.
Claims (1)
1. adopt the method for arc ion plating (aip) at ptfe surface plating conductive film, it is characterized in that: utilize arc ion plating (aip), the method that adopts heated parts, ionic fluid to clean and plate transition layer successively, at ptfe surface plating conductive film, its concrete steps are:
1) the tetrafluoroethylene workpiece is put in the vacuum chamber, vacuumized then, vacuum tightness≤5 * 10
-3Pa, the hold-time is not less than 2h, then the tetrafluoroethylene workpiece is heated to 100～150 ℃;
2) open airing system, import Ar and O in the vacuum chamber in step 1)
2Mixed gas, Ar and O
2Volume ratio be 1: 1, keeping vacuum tightness is 2 * 10
-2Pa～5 * 10
-2Pa; Open ion source, the setting operating voltage is 3.0kV～4.0kV, the tetrafluoroethylene workpiece is carried out ionic fluid clean 30min～50min;
3) close ion source and airing system, open Cr or NiCr arc source, the working current of setting Cr or NiCr arc source is 60～80A, plating Cr or NiCr transition layer 10min～30min;
4) close Cr or NiCr arc source; On the tetrafluoroethylene workpiece, add-80V～-pulsed bias of 200V, the pulsed bias frequency is 1kHz～10kHz, the pulsed bias dutycycle is 10%～20%; Open Al, Cu or Au arc source, the discharging current of setting Al, Cu or Au arc source is 60～80A, plating Al, Cu or Au conductive film 120min～200min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010522808 CN101962748B (en) | 2010-10-26 | 2010-10-26 | Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010522808 CN101962748B (en) | 2010-10-26 | 2010-10-26 | Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology |
Publications (2)
| Publication Number | Publication Date |
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| CN101962748A CN101962748A (en) | 2011-02-02 |
| CN101962748B true CN101962748B (en) | 2011-09-28 |
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| CN 201010522808 Active CN101962748B (en) | 2010-10-26 | 2010-10-26 | Method for plating conductive film on surface of polytetrafluoroethylene by adopting arc ion plating technology |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105132863A (en) * | 2015-09-11 | 2015-12-09 | 兰州空间技术物理研究所 | Method for relieving microcrack propagation of metal coating on composite-material surface |
| CN105154819A (en) * | 2015-09-11 | 2015-12-16 | 兰州空间技术物理研究所 | Method for preparing reflective film on the surface of ultra light reflective mirror |
| CN105671511A (en) * | 2016-03-29 | 2016-06-15 | 武汉诚盛电子有限公司 | Whole plasma vacuum plating process for car ornament |
| CN111186061A (en) * | 2019-12-25 | 2020-05-22 | 江苏亿豪塑业股份有限公司 | Method for manufacturing tetrafluoro plate with metal aluminum coating on surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801368A (en) * | 1970-11-25 | 1974-04-02 | Toray Industries | Process of electroless plating and article made thereby |
| CN1769540A (en) * | 2005-09-23 | 2006-05-10 | 上海工程技术大学 | Nickel base nanometer polytetrafluoroethylene composite plate preparation method |
| CN101078119A (en) * | 2006-05-26 | 2007-11-28 | 佛山市顺德区汉达精密电子科技有限公司 | Preparation method for plastic with metallic handle surface |
-
2010
- 2010-10-26 CN CN 201010522808 patent/CN101962748B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801368A (en) * | 1970-11-25 | 1974-04-02 | Toray Industries | Process of electroless plating and article made thereby |
| CN1769540A (en) * | 2005-09-23 | 2006-05-10 | 上海工程技术大学 | Nickel base nanometer polytetrafluoroethylene composite plate preparation method |
| CN101078119A (en) * | 2006-05-26 | 2007-11-28 | 佛山市顺德区汉达精密电子科技有限公司 | Preparation method for plastic with metallic handle surface |
Non-Patent Citations (1)
| Title |
|---|
| 王斌.多层机构微波毫米波薄膜电路制作工艺研究.《电子工艺技术》.2009,第30卷(第6期),第349-352页，第362页. * |
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| CN101962748A (en) | 2011-02-02 |
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