CN208174571U - A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse formation circuit - Google Patents
A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse formation circuit Download PDFInfo
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- CN208174571U CN208174571U CN201820201482.0U CN201820201482U CN208174571U CN 208174571 U CN208174571 U CN 208174571U CN 201820201482 U CN201820201482 U CN 201820201482U CN 208174571 U CN208174571 U CN 208174571U
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Abstract
The utility model discloses a kind of collection high pressure-burst pulse preionization integration high power bipolar pulses to form circuit, the circuit is formed that circuit, high power negative polarity low pressure main pulse forms circuit, positive polarity action of low-voltage pulse forms circuit and magnetic switch is formed by negative polarity high pressure-burst pulse, plasma load preionization processing is realized using negative polarity high pressure-burst pulse, the characteristics of bipolarity high power pulse is used for the sputtering of target, can adapt to load impedance variation immediately.Collect high pressure-burst pulse preionization integration high power bipolar pulse and form the duty ratio that circuit output high power pulse duty ratio is much larger than the preionization pulse of negative polarity high pressure, improves magnetron sputtering plating power-efficient and target as sputter plating membrane efficiency, reduces power volume.For solving the problems, such as that power volume is larger, efficiency is lower, target particle deposition rate is low.
Description
Technical field
The invention belongs to electronic circuits and magnetron sputtering material surface treatment research technical field, and in particular to a kind of collection is high
Short pulse preionization integration high power bipolar pulse is pressed to form circuit.
Background technique
In recent years, the one kind of magnetron sputtering technique as vacuum sputtering, with its unique advantage, as depositing temperature is low, thin
Film density is high and film thickness is easy to control etc., becomes hard coat and prepares one of the technology being widely used.Magnetron sputtering technique
It is divided into magnetically controlled DC sputtering and high-power impulse magnetron sputtering according to the difference of magnetron sputtering electric power output voltage mode.Due to height
Power Impulse Magnetron sputtering technology is with sputtering particle ionization level height and can deposit very fine and close and have high performance thin film
Two big advantages, high-power impulse magnetron sputtering technology are the hot spots of studies in China.Due to magnetron sputtering plasma loading characteristics
Difference, resistance difference is very big after the ionization of different targets, and load impedance is generally high resistant when not ionizing, once ionize
Back loading impedance very little, electric current, which increased dramatically, in circuit is easy to happen high fire phenomenon, it is desirable that pulsed magnetron sputtering power supply has very
Fast regulating power, moment adapt to the variation of load impedance.In most cases single high power single polarity generation circuit and
Bipolar pulse forms the variation that circuit does not adapt to plasma load impedance characteristic.There is high power pulse peak value at present
It can be very good the characteristics of adapting to load impedance variation with the pulse shaping circuit of DC form pretreatment feature, this circuit leans on
Direct current component pre-processes the load plasma starting the arc to realize, high power pulse is used for the sputtering of target, but due to high power
Pulse duty factor is less than the duty ratio of direct current component, and power volume is larger, efficiency is lower；Direct current component voltage it is general it is relatively low not
Plasma load preionization can effectively be made, particle deposition rate compares lower in practical application, target as sputter efficiency compared with
It is low.
Summary of the invention
In response to the problems existing in the prior art, the purpose of the present invention is to provide a kind of collection high pressure-burst pulse preionization one
Change high power bipolar pulse and forms circuit.The circuit forms circuit by negative polarity high pressure-burst pulse, negative polarity main pulse is formed
Circuit, positive polarity main pulse form circuit and magnetic switch composition.The negative polarity high pressure prepulsing and low voltage dipole master pulse
It is individually controllable to rush the parameters such as voltage magnitude, the pulse width of output, does not interfere with each other.
To achieve the above object, the present invention adopts the following technical scheme that：
Collect high pressure-burst pulse preionization integration bipolar pulse formation circuit and passes through plasma load application cathode
Property high pressure-burst pulse electric field, quickly making working gas that the gas ionization in ionization occur, to form impedance lower, stable weakly ionized
Discharge channel；Sputtering then by high power negative polarity low-voltage electric current pulse, for target；By positive polarity action of low-voltage pulse electricity
, for introducing electronics cleaning niobium target surface, neutralize the positive charge of target material surface accumulation.
In the above-mentioned technical solutions, it includes that the collection high pressure-burst pulse preionization integration bipolar pulse, which forms circuit,
The two poles of the earth of one storage capacitor are connected respectively to first switch tube and second switch, once connect between the first, second switching tube
Connect the first current-limiting resistance and plasma load；The two poles of the earth of second storage capacitor are connected respectively to third switching tube and the 4th and open
The second current-limiting resistance, the first magnetic switch, plasma load and is once connected in series in Guan Guan between third, the 4th switching tube
Two magnetic switches；The first magnetic switch and plasma load and protective resistance being connected in series are parallel with one another；Third storage capacitor
The two poles of the earth are connected respectively to the 5th switching tube and the 6th switching tube, and two poles of protection are once connected in series between the five, the 6th switching tubes
Pipe, the second magnetic switch, plasma load and the first magnetic switch.
In the above-mentioned technical solutions, the anode of first storage capacitor is connected to the collector of first switch tube, and first
The cathode of storage capacitor is connected to the emitter of second switch, the emitter of first switch tube and the collector of second switch
Between be sequentially connected in series the first protective resistance and plasma load, the anode and the current collection of second switch of the plasma load
Pole connection.
In the above-mentioned technical solutions, the anode of second storage capacitor is connected to the drain electrode of third switching tube, the second storage
The cathode of energy capacitor is connected to the source electrode of the 4th switching tube, between the source electrode of third switching tube and the drain electrode of second switch successively
It connects the second protective resistance, the first magnetic switch, plasma load and the second magnetic switch, first protective resistance one end and plasma
Body load anode connection, connects the first protective resistance other end, the plasma between the first magnetic switch and the second protective resistance
The anode of body load is connect with the second magnetic switch pipe.
In the above-mentioned technical solutions, each switching tube is connected separately with negative voltage bias isolated drive circuit.
In the above-mentioned technical solutions, the output cathode of each negative voltage bias isolated drive circuit is connected to corresponding switching tube
Grid, the output negative pole of each negative voltage bias isolated drive circuit is connected to the source electrode or emitter of corresponding switching tube.
In the above-mentioned technical solutions, the cathode of first storage capacitor, the cathode of the second storage capacitor, third energy storage electricity
It is mutually isolated between the cathode of appearance, the cathode of plasma load.
In the above-mentioned technical solutions, the process of pulse generation is：
When the negative voltage bias isolated drive circuit while output signal being connected in first switch tube and second switch
When, the first, second switching tube conducting, the first energy-storage capacitor passes through the first, second switching tube, the first current-limiting resistance, plasma
Body loads to form discharge loop, and negative high voltage short pulse, the first, second magnetic switch and protective resistance are generated on plasma load
Negative polarity high pressure-burst pulse is prevented to enter third, the four, the five, the 6th switching tubes；It is opened when being connected to third switching tube and the 4th
When closing the negative voltage bias isolated drive circuit while output signal on pipe, third, the conducting of the 4th switching tube, the second storage capacitor
Device forms electric discharge by third, the 4th switching tube, the second current-limiting resistance, the first magnetic switch, the second magnetic switch, plasma load
Circuit generates high power negative polarity voltage pulses on plasma load；When being connected to the 5th switching tube and the 6th switching tube
On negative voltage bias isolated drive circuit simultaneously output signal when, the conducting of the five, the 6th switching tubes, third energy-storage capacitor is logical
It crosses the five, the 6th switching tubes, protection diode, the second magnetic switch, the first magnetic switch, plasma load and forms discharge loop,
High power positive polarity voltage pulses are generated on plasma load.
In conclusion by adopting the above-described technical solution, the beneficial effects of the invention are as follows：
A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse, which forms circuit, can produce output pulse electricity
The parameters such as pressure amplitude value, pulse width are individually controllable, non-interfering negative polarity high pressure-burst pulse, high power negative polarity low pressure master pulse
Punching, positive polarity action of low-voltage pulse, plasma load preionization processing is realized using negative polarity high pressure-burst pulse, and bipolarity is high
The characteristics of power pulse is used for the sputtering of target, can adapt to load impedance variation immediately, output high-power pulse duty factor is remote
Greater than the duty ratio of negative polarity high pressure preionization pulse, magnetron sputtering plating power-efficient and target as sputter plated film effect are improved
Rate reduces power volume.Solve the problems, such as that power volume is larger, efficiency is lower, target particle deposition rate is low.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, wherein：
Fig. 1 collects high pressure-burst pulse preionization integration high power bipolar pulse and forms circuit diagram；
Fig. 2 negative voltage bias isolated drive circuit plate structural block diagram；
Fig. 3 collects the magnetron sputtering plating power supply that high pressure-burst pulse preionization integration high power bipolar pulse forms circuit
The voltage and current waveform exported under the load of niobium target.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
As shown in Figure 1, a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit by cathode
Property high pressure-burst pulse preionization pulse forming network, high power negative polarity main pulse network and positive pulse form group of networks
At.Negative polarity high pressure-burst pulse preionization pulse forming network is mainly switched by energy-storage capacitor C1, IGBT switching tube Q1, IGBT
Pipe Q2, current-limiting circuit RS1 load RL composition, and when driving signal V1, V2 is simultaneously high level, switching tube Q1, Q2 are simultaneously turned on,
Storage capacitor C1 forms discharge loop by switching tube Q1, Q2, current-limiting resistance Rs, load RL, generates negative polarity on load RL
High-voltage pulse；High power negative polarity main pulse network is mainly by energy-storage capacitor C2, switch mosfet pipe Q3, switching tube
MOSFETQ4, current-limiting circuit RS2, magnetic switch MS1, magnetic switch MS2, load RL composition, when driving signal V3, V4 is high electricity simultaneously
Usually, switching tube Q3, Q4 is simultaneously turned on, and storage capacitor C2 is opened by switching tube Q3, Q4, current-limiting resistance RS2, magnetic switch MS1, magnetic
Close MS2, load RL forms discharge loop, the generation high power negative polarity action of low-voltage pulse on load RL；Positive pulse forms network master
Will by energy-storage capacitor C3, diode D1, switch mosfet pipe Q5, switch mosfet pipe Q6, magnetic switch MS1, magnetic switch MS2,
RL composition is loaded, when driving signal V5, V6 is simultaneously high level, switching tube Q5, Q6 are simultaneously turned on, and storage capacitor C3 is by opening
Pipe Q5, Q6, diode D1 are closed, magnetic switch MS1, magnetic switch MS2, load RL form discharge loop, generate positive electricity on load RL
Press pulse；Negative polarity high pressure when magnetic switch MS1, magnetic switch MS2 and protective resistance RS2 prevent the preionization of negative polarity high pressure-burst pulse
Short pulse seals in high power bipolar pulse and forms network, prevents high-voltage pulse from adding to and damages switch on low pressure switch mosfet pipe
Pipe；Negative polarity high pressure-burst pulse forms network, high power negative polarity main pulse forms network and positive pulse formation network is defeated
The parameters such as voltage magnitude, pulse width are individually controllable out, do not interfere with each other.
As shown in Fig. 2, negative voltage bias isolated drive circuit plate by optical signal input, photoelectric signal transformation, signal isolation,
Signal driving, negative voltage bias and signal output unit composition.It is straight that negative voltage bias unit for signal driving unit provides -5 V
Bias voltage is flowed, when drive circuit board does not have light pulse signal input, drive circuit board exports -5 V DC voltages, once it drives
When dynamic circuit board has light pulse signal input, output optical pulse signal is converted to by+5 V electricity arteries and veins by photoelectric signal transformation unit
Signal is rushed, right+5 V electric impulse signal input of signal isolation unit, output are isolated, and output electric pulse signal is isolated through signal
Driving unit exports+20 V voltage pulse signals, which is connected between switch tube grid and source electrode through grid resistance, makes to switch
Pipe fast conducting can change the driving current and switch conduction speed of switching tube by adjusting grid resistance resistance value, work as driving
Voltage pulse makes to switch voltage between tube grid and source electrode at once after disappearing become -5 V DC voltages, it is ensured that switching tube quickly,
Reliable shutdown, the voltage oscillation impact for solving the problems, such as that switching tube is generated on and off influence power source performance, make to switch
Pipe work in ideal switch state, shorten switch time, reduce switching loss, improve power supply operational efficiency,
Reliability and safety.
As shown in figure 3, a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms the magnetic control of circuit
The voltage and current waveform that sputter coating power supply exports under the load of niobium target.It is in device parameter：High pressure preionization pulse voltage
Amplitude -3600V, 6 microsecond of pulse width；High power negative polarity action of low-voltage pulse voltage magnitude -720V, 200 microsecond of pulse width；Just
Polarity action of low-voltage pulse voltage magnitude 300V, 200 microsecond of pulse width；60 Hz of working frequency, working gas are argon gas, air pressure 0.7
Under Pa.With PEARSON electric current loop（110 types, 0.1V/A）Load circuit when detecting work respectively with Tek P6015A high-voltage probe
In voltage, current signal.Niobium target successfully sputters niobium particle in the above operating condition, and the preionization pulse that do not add high pressure is direct
High power bipolarity low pressure main pulse niobium target cannot sputter, and it is low with sputtering yield successfully to solve the load sputtering of niobium target
Problem.
The invention is not limited to applications above-mentioned.Present invention could apply to splashing for other plasma loads such as xenon lamp
It penetrates and is handled with preionization, can extend to any new feature disclosed in the present specification or any new combination, and disclose
Any new method or process the step of or any new combination.
Claims (6)
1. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit, it is characterised in that including first
The two poles of the earth of storage capacitor are connected respectively to first switch tube and second switch, and once series connection connects between the first, second switching tube
Connect the first current-limiting resistance and plasma load；The two poles of the earth of second storage capacitor are connected respectively to third switching tube and the 4th switch
Pipe, is once connected in series the second current-limiting resistance, the first magnetic switch, plasma load and second between third, the 4th switching tube
Magnetic switch；The first magnetic switch and plasma load and protective resistance being connected in series are parallel with one another；The two of third storage capacitor
Pole is connected respectively to the 5th switching tube and the 6th switching tube, be once connected in series between the five, the 6th switching tubes protection diode,
Second magnetic switch, plasma load and the first magnetic switch.
2. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse according to claim 1 forms electricity
Road, it is characterised in that the anode of first storage capacitor is connected to the collector of first switch tube, and the first storage capacitor is born
Pole is connected to the emitter of second switch, is sequentially connected in series between the emitter of first switch tube and the collector of second switch
The anode of first protective resistance and plasma load, the plasma load is connect with the collector of second switch.
3. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse according to claim 1 forms electricity
Road, it is characterised in that the anode of second storage capacitor is connected to the drain electrode of third switching tube, the cathode of the second storage capacitor
It is connected to the source electrode of the 4th switching tube, the second protection is sequentially connected in series between the source electrode of third switching tube and the drain electrode of second switch
Resistance, the first magnetic switch, plasma load and the second magnetic switch, first protective resistance one end and plasma load anode connect
It connects, the first protective resistance other end, the anode of the plasma load is connected between the first magnetic switch and the second protective resistance
It is connect with the second magnetic switch pipe.
4. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse according to claim 1 forms electricity
Road, it is characterised in that each switching tube is connected separately with negative voltage bias isolated drive circuit.
5. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse according to claim 1 forms electricity
Road, it is characterised in that the output cathode of each negative voltage bias isolated drive circuit is connected to the grid of corresponding switching tube, each
The output negative pole of negative voltage bias isolated drive circuit is connected to the source electrode or emitter of corresponding switching tube.
6. a kind of collection high pressure-burst pulse preionization integration high power bipolar pulse according to claim 1 forms electricity
Road, it is characterised in that the cathode of first storage capacitor, the cathode of the second storage capacitor, third storage capacitor cathode, etc.
It is mutually isolated between the cathode of plasma load.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820201482.0U CN208174571U (en) | 2018-02-06 | 2018-02-06 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse formation circuit |
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| CN201820201482.0U CN208174571U (en) | 2018-02-06 | 2018-02-06 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse formation circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108173450A (en) * | 2018-02-06 | 2018-06-15 | 中国工程物理研究院流体物理研究所 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit |
| CN111564355A (en) * | 2019-02-14 | 2020-08-21 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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2018
- 2018-02-06 CN CN201820201482.0U patent/CN208174571U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108173450A (en) * | 2018-02-06 | 2018-06-15 | 中国工程物理研究院流体物理研究所 | A kind of collection high pressure-burst pulse preionization integration high power bipolar pulse forms circuit |
| CN108173450B (en) * | 2018-02-06 | 2024-03-12 | 中国工程物理研究院流体物理研究所 | High-power bipolar pulse forming circuit integrating high-voltage short pulse pre-ionization |
| CN111564355A (en) * | 2019-02-14 | 2020-08-21 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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