CN101960554A - Ion source - Google Patents
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- CN101960554A CN101960554A CN2009801063541A CN200980106354A CN101960554A CN 101960554 A CN101960554 A CN 101960554A CN 2009801063541 A CN2009801063541 A CN 2009801063541A CN 200980106354 A CN200980106354 A CN 200980106354A CN 101960554 A CN101960554 A CN 101960554A
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- filament
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
Abstract
An ion source (1) comprises a first wall surface (30) in which an opening (20) for leading out an ion beam (B) is provided, a second wall surface (32) extending along the direction of arrangement of magnets (26, 28), and a filament (12). The filament (12) stands from the second wall surface (32) in a direction different from the direction of arrangement of magnets (26, 28) and is turned down, in the center thereof, to form a loop (40) crossing in X-shape without touching. With such an arrangement, ion beam current can be increased without increasing the distance between the magnets, and thereby the filament can be made at a low cost and a highly robust ion source can be supplied.
Description
Technical field
The present invention relates to a kind ofly produce plasma by gas being provided and applying arc voltage, and produce the ion source of ion beam by this plasma, (Flat Panel Display FPD) makes with the ion source that uses in the ion implantation apparatus for example to use ion implantation apparatus and flat-panel monitor at semiconductor.
Background technology
In general widely used ion source, plasma container as anode, will be discharged thermionic filament as negative electrode by energising, and with the unstrpped gas plasma, produce plasma by the induced electricity arc discharge.Positive charged particles in this plasma is drawn as ion beam from being arranged on elongated open portion on the plasma container or continuous a plurality of peristomes.At this moment, applying magnetic field with drawing on the vertical direction of direction of ion beam.
In such ion source, generally point out following specification requirement:
Require the plasma density of generation roughly even;
Requirement increases ion beam current by increasing near the density of the plasma the peristome of drawing as ion beam;
Filament by the wearing and tearing of the ion collision in the plasma is low as the running stores cost; And
Requiring filament is the high heavy wire of mar proof, using for a long time.
For example, known ground in order to make the plasma density in the plasma container roughly even, need make to constitute roughly evenly (variation in magnetic field is below several percentage points) near the magnetic field intensity the plasma container by design, making and the adjustment of magnet
In addition, known ground increases in order to make near the plasma density the peristome, and making filament is effective near the position of the wall of the plasma container that extends from peristome.
Further, in order to reduce the cost of filament, expectation is carried out bending machining by the wire rod to filament and is made.As the wire rod of filament, employing fusing point height, tungsten or molybdenum that mar proof is high are the material of main component (quality % is more than 90%).At this moment, because the fusing point height of tungsten and molybdenum, so need at high temperature process wire rod to obtain plasticity.Thus, adopt the line footpath approximately below the 2mm as wire rod.
On the other hand, in No. 3075129 communique of special permission, put down in writing, filament has been drawn the ion source of the direction bending on surface to the ion that forms the ion outlet in plasma generation chamber inside as plasma container.Thus, can increase ion beam.
Further, open in the 2007-311118 communique the spy, the long ion source of life-span of big as ion beam current, as to constitute negative electrode filament has been put down in writing along the length direction of plasma container and has been set up in parallel a plurality of ion sources that are used to control the filament of plasma density distribution.
Summary of the invention
The technical problem to be solved in the present invention
Under these circumstances, in order to increase the electric current of ion beam further, except adopting the method for in No. 3075129 communique of special permission, putting down in writing, consider that also enlarging drawing of ionogenic ion beam uses peristome.But by the method for enlarged openings portion, the emittance of ion beam (the motion dispersing characteristic of the charge particle on the ion beam direction of advance of drawing) worsens so that can not be as the ion beam of ion implantation apparatus.Therefore, can not easily peristome be enlarged.On the other hand, also consider to enlarge plasma container, emittance is worsened by enlarging ionogenic size, enlarged openings portion slenderly, thus increase the electric current of ion beam.In this case, expect that more consumingly the intensity in magnetic field is roughly even near plasma container.Generally, in order to form magnetic field, length direction configuration pair of magnet along plasma container with 100～150mm length, but owing to need be used to tackle the high voltage that acts on the plasma container and the space and the parts of high temperature, so the distance of the configuration between this magnet is 500～600mm.Distance between such magnet is very long, is difficult by enlarging space that ionogenic size enlarges broad setting roughly uniformly on the magnetic field.Therefore, need not enlarge the distance between magnet and enlarge plasma container.
On the other hand, because the fusing point height of wire rod, the shape that the bending wire that will be used for the tungsten of filament or molybdenum is processed as regulation is difficult to.At present, replacing wire rod is by adopting the edm of net electrode, sheet material being cut into complicated shape and carries out the processing of filament.Therefore, make, still need adopt wire rod, rather than sheet material, and this line directly is suppressed at about 2mm in order to carry out bending machining at low cost.On the other hand, in the shape that does not change filament, and enlarging under the situation of size in order to constitute the big and stable shape of radius of curvature, enlarge plasma container accordingly with the size of filament, is unpractical.In addition, because filament constitutes the hot electron source of release that produces plasma, the density of article on plasma body exerts an influence, so existing filament constitutes the complicated shape of the regulation that comprises meanders.Therefore, the plasma density that expectation produces has simple shape with existing identical aspect processing, and has the filament in thick as far as possible line footpath.
Further, in order to reach the plasma density of expectation, the shape of filament is set by cooperating ionogenic various sizes, so when ionogenic various sizes etc. change owing to the variation in elapsed time or thermal expansion etc., the plasma density that can not obtain expecting.Even therefore the ionogenic various sizes of expectation change, can the article on plasma volume density not exert an influence yet, promptly produce the ionogenic structure of the high ion beam of robustness.
In addition, filament can wear and tear owing to being exposed in the plasma during plasma generation, and line is directly attenuated.Therefore, the part that the temperature that provides in order to discharge hot electron in filament is high changes owing to wearing and tearing, and causes thermionic off-position also to change thus.As a result, also change owing to produce the position of plasma, thus the electric current of the ion beam of drawing from plasma also change, thereby can not obtain the electric current of stable ion beam.That is, along with ionogenic use, the electric current of ion beam slowly changes.Therefore, even expect that the electric current of ion beam can not be subjected to excessive influence yet, promptly produces the ionogenic structure of the high ion beam of robustness owing to the variation in the elapsed time such as wearing and tearing of filament.
Therefore, consider the above-mentioned background technology, the purpose of this invention is to provide and a kind ofly can not enlarge the distance between magnet and enlarge plasma container, can make filament at low cost simultaneously, further with respect to the change of ionogenic various sizes and the high ion source of wearing and tearing robustness of filament.
The technical scheme of dealing with problems
To achieve these goals, the invention provides a kind of following ion source, it is by providing gas, apply arc voltage and produce plasma, and produces ion beam by this plasma.This ion source comprises:
(A) pair of magnet, form along with the magnetic field that the vertical direction of direction applies of drawing of ion beam;
(B) plasma container, be arranged between the described pair of magnet, have the inner space that the conductor surface of gas to produce plasma is provided, the peristome that wherein is used to draw ion beam is arranged on along first wall of the configuration direction extension of described pair of magnet described the inner space in;
(C) filament with described plasma container electric insulation, discharges hot electron from the vertical setting of second wall that extends along the configuration direction of described pair of magnet and by energising in described inner space;
(D) power supply flows electric current in described filament;
(E) described second wall that described filament vertically is set is towards the surface of the direction different with the direction of described first wall, and described filament vertically is arranged on the direction different with the configuration direction of described pair of magnet from described second wall;
(F) further, described filament turns back and forms ring-type at the central part of described filament, and has the part that not contacted X shape intersects when the base portion in described ring-type when observing perpendicular to the direction on the surface that forms described ring-type.
At this moment, preferably, described inner space forms rectangular shape, and described second wall is and the relative wall of described first wall.
In addition, preferably, described filament vertically is provided with, so that form the magnetic direction of the described pair of magnet of surperficial approximate vertical of described ring-type.
Further, preferably, on the both ends of the described configuration direction of the described inner space of described plasma container the thermionic Buck Plate of reflection is set, is oppositely arranged with the ring-type of described filament, the size of described ring-type is less than the size of described reflecting plate.
In addition, preferably, described filament is made by the bar-shaped wire rod of bending machining, is to be the metal of selecting the alloy of main component from tungsten, molybdenum with tungsten or molybdenum.
Further, preferably, the line of described filament footpath is greater than 2mm.
In addition, preferably, the intersecting angle of the X shape cross section of described filament is 70～110 degree.
In addition, preferably, the distance between the top ends of described filament and described first wall is 2～3mm.
The invention effect
In ion source of the present invention, constitute filament, so that turn back forming ring-type, and, have the part of not contacted X shape intersection at the base portion of ring-type when when observing perpendicular to the direction on the surface that forms this ring-type at the central part of filament.Thus, the heat that sends mutually for the part of X shape by intersection heats cross one another part, this heating is arrived annulus by heat conduction, thus constitute high temperature and discharge hot electron in the wider portion of ring-type, and in the scope of broad, gently produce plasma.Thus, even ionogenic various sizes etc. are owing to the variation in elapsed time and thermal expansion etc. change, the influence that the electric current of the ion beam of drawing from above-mentioned plasma is subjected to also can be very little.In addition, owing to discharge hot electron from the wider portion of ring-type, so even the filament wearing and tearing, the scope that produces plasma does not have big variation yet.Therefore, even filament wearing and tearing, the influence that the electric current of the ion beam of drawing from plasma is subjected to is also very little.
In addition, owing to filament has the shape that forms ring-type and X shape, compare with existing complicated shape to have simple shape, so also can easily be processed even be difficult to the heavy wire of bending machining.Therefore, can provide long filament of life-span at low cost.
Further, filamented second wall vertically be set be towards with first wall towards the surface of different directions, filament vertically is arranged on the direction different with the configuration direction of pair of magnet from described second wall.Especially from the wall relative filament is set vertically with first wall that comprises the peristome of drawing ion beam.Thus, different with the existing structure that filament is installed on the both ends of the magnet configuration direction of plasma container, on this two end portions, do not need to be provided with the space of the holding components and the insulating element of filament.Thus, this unwanted space segment can be used to enlarge the size of plasma container.
Further, wall by will be relative with first wall that comprises the peristome of drawing ion beam as second wall to constitute the structure that filament vertically is set, thereby can make near approaching the comprising first wall of peristome of position on the top of filament, and can near peristome, produce the high plasma of density.
Further, owing to filament vertically is set from second wall, so thermal loss that causes for the heat conduction that reduces filament, the size that can be independent of plasma container is freely adjusted the length of filament by the foot of plasma container, perhaps is provided for preventing adhering in filament foot the sleeve pipe etc. of deposit.
Description of drawings
Fig. 1 is the figure that the structure of source of the present invention one execution mode is shown.
Fig. 2 a and Fig. 2 b are the figure that the filamentary form that uses in the ion source shown in Figure 1 is described.
Symbol description
1 ion source, 26,28 magnet
10 plasma containers, 30,32 walls
12 filaments, 33 filament power supplys
14,16 reflecting plates, 34 arc powers
18 unstrpped gases supply, 36,38 power supplys
20 ion beams are drawn 40 annular shapes
22,24 extraction electrodes
Embodiment
Below, based on preferred implementation illustrated in the accompanying drawings, explain ion source of the present invention.Fig. 1 is the structure chart that ion source one execution mode of the present invention is shown.
Ion source 1 is to discharge with the generation plasma P by the gas G that supplies raw materials, and by draw this (BANASU) source of para that ion produces ion beam B from this plasma P.As shown in Figure 1, ion source 1 has plasma container 10, filament 12, reflecting plate 14,16, unstrpped gas supply opening 18, ion beam outlet 20, extraction electrode 22,24 and magnet 26,27.Plasma container 10 is accommodated in the pressure reduction vessel of not shown ion implantation apparatus, makes to constitute in the plasma container 10 to reduce pressure 10
-2～10
-3(Pa) state.
The filament 12 that vertical setting is given prominence to the inner space from the wall of the inner space of plasma container 10.And this filament 12 is provided with vertically from the wall 32 relative with the wall 30 that is provided with ion beam outlet 20.Filament 12 is by being that the metal of selecting the alloy of main component constitutes from tungsten, molybdenum, with tungsten or molybdenum.Especially, when the mar proof angle is considered, preferably constitute by tungsten.
Like this, the wall that filament 12 vertically is set constitutes the wall (second wall) 32 relative with the wall that ion beam outlet 20 is set (first wall) 30, and this is to enlarge plasma container 10 along its length owing to can not enlarge the distance between magnet 26 and the magnet 28.Promptly, as prior art, from wall in the face of the configuration direction of magnet 26,28, it is the end wall of the length direction of plasma container 10, filament 12 vertically is arranged under the situation of inner space, on the end of the length direction of plasma container 10, needs the configuration space of filament holding components and insulating element etc.Therefore, as ion source 1, by filament 12 vertically being set from the wall 32 relative with the wall 30 that ion beam outlet 20 is set, do not need the configuration space of filament holding components and insulating element etc., so this unwanted configuration space can be used to enlarge the size of the length direction of plasma container 10.
Further, the thermal loss that causes for the heat conduction that reduces by filament 12, can adjust the length of the foot that passes through plasma container 10 of filament 12 with the size independence and freedom ground of plasma container 10, or be provided for preventing to adhere to the sleeve pipe of deposit in filament foot.
Like this, from the wall 32 relative filament 12 is set vertically with the wall 30 of ion beam outlet 20.At this moment, make the top ends of filament 12 approaching in the scope of 2～3mm with respect to wall 30.Thus, can near ion beam outlet 20, increase the density of plasma P, increase the electric current of ion beam B.
And, in the present invention, be not limited to filament 12 vertically is set from the wall 32 relative with the wall 30 that ion beam outlet 20 is set.Also can filament 12 vertically be set from the wall that comprises the surface parallel with the paper plane of Fig. 1.In the present invention, can towards with the different direction of direction (the vertical line direction of wall 30) of the wall 30 that ion beam outlet (peristome) 20 is set, wall from extending along the configuration direction between the pair of magnet 26,28 vertically is provided with filament 12 on the direction different with the configuration direction of pair of magnet 26,27.But the electric current that flows in filament 12 is on the minimum this point of the influence of ion beam B generation, and the structure that filament 12 is set on distance ion beam outlet 20 wall 32 farthest is preferred.
Further, filament 12 constitutes ring-type.This point is described below.
In the opposite side and the rear side of filament 12, promptly the inner space of plasma container 10 along on the wall at the both ends of magnet 26,28 configuration directions, reflecting plate 14,16 is set.Reflecting plate 14,16 is made of the metallic parts with heat-resisting quantity, is fixedly installed on the plasma container 10 via not shown clamping part and insulating element.Reflecting plate 14,16 is set to take a little the cross section of the inner space of plasma container 10.
On the wall 31 of plasma container 10, unstrpped gas supply opening 18 is set.The unstrpped gas of expectation is by the not shown constant flow of by-pass valve control control, thus the inner space of importing plasma container 10.
In the outside of plasma container 10, extraction electrode 22,24 is set, make it must be relative with the ion beam outlet 20 on being arranged on wall 30. Extraction electrode 22,24 comprises having the peristome identical shaped with ion outlet 20, and via not shown insulating element, critically determines position and fixing with respect to plasma container 10. Extraction electrode 22,24 is because the chance that exposes to the open air in ion beam B is many, so preferably adopt the high material of thermal endurance under high-melting-point.For example, can adopt graphite, tungsten, molybdenum etc., but, preferably adopt graphite from economy and processability angle.About ion beam B,, from the plasma P isolating ions and draw, thereby form ion beam B by the wall 30 of plasma container 10 and the potential difference between the extraction electrode 22.
Between extraction electrode 22,24, apply several kilovolts voltage.The low-velocity electron that produces though ion beam B and wall etc. collide is by the charge-trapping of ion beam B, and delay distributes, but between extraction electrode 22,24, apply several kilovolts voltage by above-mentioned, can prevent that above-mentioned electron irradiation is to the outer side surface of plasma container 10 by the potential difference between extraction electrode 22 and the extraction electrode 24.
The outside at plasma container 10, pair of magnet 26,28 is set, in order to make magnetic field in the plasma container 10, and distributed magnet 26,28, determine the shape of magnet further along the configuration direction of magnet 26,28 roughly evenly (variation in magnetic field is in several percentage points). Magnet 26,28 is configured to the N utmost point, the S utmost point, makes the magnetic line of force pass through the other end from an end of the length direction of plasma container 10, magnet 26,28 links to each other by the not shown return yoke by manufacturings such as the high soft electromagnet of magnetic susceptibility in the outside of magnet 26,28. Magnet 26,28 adopts permanent magnet or electromagnet.But,, preferably adopt electromagnet in order to adjust magnetic field.
On filament, connect filament power supply 33, make it can discharge hot electron.The positive pole of filament power supply 33 is connected with filament 12 with negative pole, the electric current of the hundreds of A that flows in filament 12.Thus, filament 12 is heated to discharge hot electron.The positive pole of filament power supply 33 is connected on the reflecting plate 14,16.
Further, between the negative pole of filament power supply 33 and plasma container 10, connect arc discharge power supply 34, on plasma container 10, apply tens arc voltages to several hectovolts.
The arc voltage of the electric current of filament power supply 33 and arc discharge power supply 34 is adjusted by not shown control device, so that the current stabilization of ion beam B.Perhaps, the electric current of the electric current of filament power supply 33 outflows and power supply 36 outflows is adjusted by not shown control device.Preferably, the adjustment carried out of the electric current that flows out of electric current that filament power supply 33 is flowed out and power supply 36 can be adjusted simply.
Shown in Fig. 2 a and Fig. 2 b, in such ion source 1, filament 12 turns back to form ring-type 40 at the central part of filament 12.When observing perpendicular to the direction on the surface that forms ring-type 40, have at base portion 42 places of ring-type 40 and do not contact, be the part of X shape but intersect.The surperficial approximate vertical of the formation ring-type 40 of filament 12 or in fact perpendicular to the direction in the magnetic field of magnet shown in Figure 1 26,28.Further, the ring size of ring-type 40 is littler than the size of reflecting plate 14,16.This is for the hot electron that will discharge from the part of the ring-type 40 of filament 12 reflects efficiently, thereby can make the hot electron back and forth movement.
Shown in Fig. 2 b, though preferably the intersecting angle of the intersection base portion 42 of filament 12 is about 90 degree, by processing, also can be in the scope of 70～110 degree.In addition, shown in Fig. 2 b, in the foot of passing wall of filament 12, preferably the line of filament 12 is parallel, but also can be uneven.
Except comparing with the shape of existing filament, simple shape, easy bending machining, thus compared with prior art, can adopt the thick line footpath promptly to surpass beyond the line footpath of 2mm, the reason that makes filament 12 constitute ring-type 40 is that also filament can not constitute the obstacle of hot electron screw when the hot electron that discharges from filament 12 carries out screw between reflecting plate 14,16, has increased the density of the plasma of being made by hot electron effectively.In Fig. 2 b, can overslaugh is not thermionic do not pass through by ring-type 40 area surrounded (hatched example areas) A.
In addition, in existing filament, the temperature of filament only uprises at the core that filament turns back, so determine that according to temperature the thermionic release portion of burst size is limited in the narrow range of turning back.Therefore, the high plasma of density that is produced by the hot electron that discharges from narrow range is localized, and by drawing the plasma of this localization, the electric current of ion beam is increased.But, because the lasting wearing and tearing of filament, when the change in location of the high part of the temperature of filament, the position of the plasma that density is high is also from initial offset, so the electric current of the ion beam that the ion beam outlet of setting from cooperating original position is drawn changes greatly.In addition, set the various sizes of ion source 1 owing to the original position of the plasma that cooperates localization, so under the situation about changing in the variation in elapsed time such as various sizes of ion source 1 and thermal expansion etc., the original position of the plasma that produces from configuration and the electric current of the ion beam that the ion beam outlet set is drawn changes greatly.
But, because in the base portion 42 of the ring-type 40 of filament 12, shown in Fig. 2 b, by being intersected, filament 12 is the X shape, filament 12 is approaching mutually at this cross section, give heating each other so radiate the heat of conduction mutually by this part, thereby reduced ring-type 40 parts because the thermal loss that heat conduction causes.Therefore, constitute ring-types 40, and intersect and be the X shape, thereby become stable, and the wider portion that constitutes ring-type 40 constitutes and discharges thermionic high-temperature part by the Temperature Distribution that base portion 42 constitutes the wider portion of ring-type 40 as filament 12.Thus, compared with prior art,,, but in relative broad range, gently distribute so the generation zone of plasma can not localized because thermionic release portion broadens.Thus, even the various sizes of ion source 1 etc. are owing to the variation in elapsed time and thermal expansion etc. change, the electric current of the ion beam B that draws from the plasma that gently distributes in relative broad range can not be subjected to big influence yet.That is, with respect to the variation of ionogenic various sizes, the robustness height of the electric current of ion beam B.
Even under the situation of filament 12 wearing and tearing, be the wider portion of ring-type 40 owing to discharge the high part of temperature of thermionic filament, so the plasma that produces can not have bigger skew from initial position yet.The electric current of the ion beam of therefore, drawing changes little.Like this, in ion source 1, even filament 12 wearing and tearing, the electric current of ion beam B can not be subjected to big influence yet.That is, the electric current of ion beam B is to the robustness height of the wearing and tearing of filament 12.
In such ion source 1, by streaming current in filament 12, and heating at high temperature, make to discharge hot electron that this hot electron is along the screw and coming and going between reflecting plate 14,16 of the direction in magnetic field from the part of the formation ring-type 40 of filament 12.At this moment, by importing unstrpped gas G from unstrpped gas supply opening 18, and apply assigned voltage by arc power 34, unstrpped gas G produces collision with hot electron, thereby makes the atom of unstrpped gas G charged, the generation plasma P.
At this moment, in the regional A of the ring-type 40 of filament 12, because hot electron freely passes through, so hot electron can back and forth movement between reflecting plate 14,16.Thus, in the neighboring area 31 of the ring-type 40 that comprises filament 12, gently distribute to produce plasma P.It is the cylindrical of two ends that the plasma P that produces constitutes with reflecting plate 14,16.Afterwards, on extraction electrode 22,24, apply assigned voltage, draw ion beam B from ion beam outlet 20.
Even filament 12 is owing to plasma P is worn and torn, because the thermionic part of release of filament 12 broad as described above, so it is little to produce the variation in zone of plasma P.Therefore, the electric current of the ion beam B that draws from plasma P can not be subjected to big influence.In addition, owing to be created in the plasma that gently distributes in the relative broad range by filament 12, even so the various sizes of ion source 1 etc. owing to the variation in elapsed time or thermal expansion etc. change, the electric current of the ion beam B that draws from this plasma can not be subjected to big influence yet.
Though more than describe ion source of the present invention in detail, the invention is not restricted to above-mentioned execution mode, in the scope that does not break away from purport of the present invention, certainly carry out various improvement and distortion.
Claims (8)
1. ion source by gas being provided, applying arc voltage and produce plasma, and produces ion beam by this plasma, it is characterized in that comprising:
Pair of magnet, form along with the magnetic field that the vertical direction of direction applies of drawing of ion beam;
Plasma container, be arranged between the described pair of magnet, have the inner space that the conductor surface of gas to produce plasma is provided, the peristome that wherein is used to draw ion beam is arranged on along first wall of the configuration direction extension of described pair of magnet described the inner space in;
Filament with described plasma container electric insulation, discharges hot electron from the vertical setting of second wall that extends along the configuration direction of described pair of magnet and by energising in described inner space;
Power supply flows electric current in described filament;
Wherein, described second wall that described filament vertically is set is the surface towards the direction different with the direction of described first wall, described filament vertically is arranged on the direction different with the configuration direction of described pair of magnet from described second wall, further, described filament turns back and forms ring-type at the central part of described filament, and has the part that not contacted X shape intersects when the base portion in described ring-type when observing perpendicular to the direction on the surface that forms described ring-type.
2. ion source according to claim 1 is characterized in that: described inner space forms rectangular shape, and described second wall is and the relative wall of described first wall.
3. ion source according to claim 1 and 2 is characterized in that: described filament vertically is provided with, so that form the magnetic direction of the described pair of magnet of surperficial approximate vertical of described ring-type.
4. according to arbitrary described ion source in the claim 1 to 3, it is characterized in that: on the both ends of the described configuration direction of the described inner space of described plasma container, the thermionic Buck Plate of reflection is set, be oppositely arranged with the ring-type of described filament, the size of described ring-type is less than the size of described reflecting plate.
5. according to arbitrary described ion source in the claim 1 to 4, it is characterized in that: described filament is made by the bar-shaped wire rod of bending machining, is to be the metal of selecting the alloy of main component from tungsten, molybdenum with tungsten or molybdenum.
6. according to the arbitrary described ion source of claim 1 to 5, it is characterized in that: the line footpath of described filament is greater than 2mm.
7. according to the arbitrary described ion source of claim 1 to 6, it is characterized in that: the intersecting angle of the X shape cross section of described filament is 70～110 degree.
8. ion source according to claim 2 is characterized in that: the distance between the top ends of described filament and described first wall is 2～3mm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-077943 | 2008-03-25 | ||
| JP2008077943 | 2008-03-25 | ||
| PCT/JP2009/001267 WO2009119060A1 (en) | 2008-03-25 | 2009-03-23 | Ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101960554A true CN101960554A (en) | 2011-01-26 |
| CN101960554B CN101960554B (en) | 2012-12-26 |
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ID=41113271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980106354.1A Expired - Fee Related CN101960554B (en) | 2008-03-25 | 2009-03-23 | Ion source |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4446019B2 (en) |
| KR (1) | KR101128870B1 (en) |
| CN (1) | CN101960554B (en) |
| TW (1) | TW200947496A (en) |
| WO (1) | WO2009119060A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109417006A (en) * | 2016-06-30 | 2019-03-01 | 瓦里安半导体设备公司 | Ion source for enhanced ionization |
| US11120966B2 (en) | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| US11232925B2 (en) | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6048829B2 (en) * | 2013-09-09 | 2016-12-21 | 日新イオン機器株式会社 | Ion source |
| KR101581808B1 (en) * | 2014-04-01 | 2015-12-31 | 엑스퍼트(주) | source magnet device of magnetic field compensating type for ion-sources |
| TWI818252B (en) * | 2017-06-05 | 2023-10-11 | 美商瓦里安半導體設備公司 | Indirectly heated cathode ion source |
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|---|---|---|---|---|
| JP2837023B2 (en) * | 1991-05-14 | 1998-12-14 | アプライド マテリアルズ インコーポレイテッド | Ion implanter with improved ion source life |
| JP3487002B2 (en) * | 1995-02-06 | 2004-01-13 | 石川島播磨重工業株式会社 | Ion source |
| JP3075129B2 (en) * | 1995-03-23 | 2000-08-07 | 日新電機株式会社 | Ion source |
| US5856674A (en) * | 1997-09-16 | 1999-01-05 | Eaton Corporation | Filament for ion implanter plasma shower |
| JP2001023532A (en) * | 1999-07-09 | 2001-01-26 | Nissin Electric Co Ltd | Control method for ion source and ion doping device |
| JP4401977B2 (en) * | 2005-02-04 | 2010-01-20 | 三井造船株式会社 | Method for producing filament used for ion source and ion source |
| CN1917131A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Filament of neutralization cathode in Kaufman ion source, and method |
| JP4179337B2 (en) * | 2006-05-17 | 2008-11-12 | 日新イオン機器株式会社 | Ion source and operation method thereof |
-
2009
- 2009-03-23 JP JP2009523504A patent/JP4446019B2/en active Active
- 2009-03-23 KR KR1020107020117A patent/KR101128870B1/en not_active IP Right Cessation
- 2009-03-23 CN CN200980106354.1A patent/CN101960554B/en not_active Expired - Fee Related
- 2009-03-23 WO PCT/JP2009/001267 patent/WO2009119060A1/en active Application Filing
- 2009-03-24 TW TW98109531A patent/TW200947496A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109417006A (en) * | 2016-06-30 | 2019-03-01 | 瓦里安半导体设备公司 | Ion source for enhanced ionization |
| CN109417006B (en) * | 2016-06-30 | 2021-01-19 | 瓦里安半导体设备公司 | Indirect heating type cathode ion source and bernas ion source |
| US11120966B2 (en) | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| US11232925B2 (en) | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2009119060A1 (en) | 2011-07-21 |
| JP4446019B2 (en) | 2010-04-07 |
| CN101960554B (en) | 2012-12-26 |
| KR101128870B1 (en) | 2012-03-27 |
| KR20100116658A (en) | 2010-11-01 |
| WO2009119060A1 (en) | 2009-10-01 |
| TW200947496A (en) | 2009-11-16 |
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