JPS6129057A - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPS6129057A JPS6129057A JP15058584A JP15058584A JPS6129057A JP S6129057 A JPS6129057 A JP S6129057A JP 15058584 A JP15058584 A JP 15058584A JP 15058584 A JP15058584 A JP 15058584A JP S6129057 A JPS6129057 A JP S6129057A
- Authority
- JP
- Japan
- Prior art keywords
- filament
- ionization chamber
- elements
- ion beam
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、半導体や金属体や絶縁体に正に帯電したイ
オンを高速で入射させ注入する集積回路製造プロセスで
の不純物導入工程力どに用いるイオン注入装置に関する
ものである。[Detailed Description of the Invention] (Industrial Application Field) This invention is applicable to the impurity introduction process in the integrated circuit manufacturing process, in which positively charged ions are implanted into semiconductors, metal bodies, and insulators at high speed. This relates to the ion implantation device used.
（従来技術とその問題点）
従来の熱陰極イオン源を備えたイオン注入装置では、イ
オン化室内に１本のタングステン線フィラメントを張り
渡し、このフィラメントに加熱電流を流して電子を放出
させその電子でイオン化室内のガスを電離（イオン化）
］７ていた。イオン注入装置では通常かなり大きなイオ
ンビーム電流ををり出せるようにする必要があり、電離
用の電子流の密度を上げるためフィラメントはガス雰囲
気中という悪条件のもとて高温に加熱される。そのため
フィラメントは、消耗が激しく数十時間程度の短い動作
時間で、断線等の使用不可能々状態に々る。そして頻繁
にイオン源付近の真空を破って新しいフィラメントと交
換し々ければカらなくなるが、この交換に、は１時間前
後かかるのが通常であり、集積回路生産ライン々どで生
産の流れを阻害する要因の一つとなっていた。(Prior art and its problems) In an ion implanter equipped with a conventional hot cathode ion source, a single tungsten wire filament is stretched inside the ionization chamber, and a heating current is passed through the filament to emit electrons. Ionizes the gas in the ionization chamber (ionization)
] 7. Ion implanters usually need to be able to produce a fairly large ion beam current, and to increase the density of the ionizing electron stream, the filament is heated to a very high temperature in an adverse gas atmosphere. Therefore, the filament is subject to severe wear and tear and becomes unusable after a short operating time of about several tens of hours. The filament must be frequently broken in the vicinity of the ion source and replaced with a new filament, but this replacement usually takes about an hour, and the process of production on integrated circuit production lines is slow. This was one of the inhibiting factors.
（発明の目的）
この発明は、フィラメントの交換頻度を減らすことので
きるイオン注入装置を提供するものである。(Object of the Invention) The present invention provides an ion implantation device that can reduce the frequency of filament replacement.
（発明の構成）
そのため本発明のイオン注入装置は複数本のフィラメン
ト素子をイオン化室に設けた熱陰極形イオン源を備える
ようにしている。(Structure of the Invention) Therefore, the ion implantation apparatus of the present invention is equipped with a hot cathode type ion source in which a plurality of filament elements are provided in an ionization chamber.
実施例を参照しながら本発明の構成を詳細に説明する。The configuration of the present invention will be explained in detail with reference to examples.
第１図は集積回路製造プロ七スでシリコンウェハに不純
物を導入するのに用いる本発明の一実施例のイオン注入
装置のイオン源を示す要部断面図である。フィラメント
１を貫通させたイオン化室２にはガス源（図示せず）か
らのガス配管３′ｆｒ：経て所定のガスが送り込まれる
。フィラメントＩＦｉ直径２ｎのタングステン線（丸棒
）を用い、１００〜２００アンペアの直流電流を通電し
て加熱して電子を放出させる。フィラメント１に対し、
イオン化室２の電位を約１００ボルト高くシ、マグネッ
ト対４，４′によりフィラメント１の線方向に磁界をか
けるとフィラメント１から放出された電子はらせん状運
動をくり返しｈがら徐々に移動し最後はイオン化室２の
内壁に吸引される。電子はこの移動中にイオン化室内の
ガスに衝突して電離させ正のイオンを発生する。この正
のイオンは集まってイオン化室２の出口５（長方形状孔
）から引出電極系６，６′の方へ引き出される。引出電
極系６．６′はイオン化室２に対し負の高電位が印加を
れており、それぞれイオン化室２の出口５と類似の長方
形状孔がおいており、断面が長方形状のイオンビーム７
が形成され図の右方に通過して行く。FIG. 1 is a cross-sectional view of a main part of an ion source of an ion implantation apparatus according to an embodiment of the present invention, which is used to introduce impurities into a silicon wafer in an integrated circuit manufacturing process. A predetermined gas is fed into the ionization chamber 2 through which the filament 1 passes through a gas pipe 3'fr: from a gas source (not shown). A tungsten wire (round bar) with a diameter of 2 nm is used as the filament IFi, and is heated by passing a direct current of 100 to 200 amperes to emit electrons. For filament 1,
When the potential of the ionization chamber 2 is increased by about 100 volts and a magnetic field is applied in the linear direction of the filament 1 using the magnet pair 4, 4', the electrons emitted from the filament 1 gradually move in a spiral motion, and finally It is attracted to the inner wall of the ionization chamber 2. During this movement, the electrons collide with the gas in the ionization chamber and are ionized to generate positive ions. These positive ions are collected and extracted from the outlet 5 (rectangular hole) of the ionization chamber 2 toward the extraction electrode system 6, 6'. A negative high potential is applied to the ionization chamber 2 in the extraction electrode system 6.6', and each has a rectangular hole similar to the outlet 5 of the ionization chamber 2, and an ion beam 7 with a rectangular cross section is provided.
is formed and passes to the right in the figure.
引出電極系６，６′のうち、電極６には他の電極６′よ
り数１００ボルト負の電位を力え、図の右方で発生する
電子がイオン化室２側へ突入（逆流）しないようにしで
ある。絶縁支持体８が電極６と他の電極６′とを連結し
、この引出電極糸６，６′は全体と［７てイオン化室２
の出口５との相対位置関係を変えられるようにしてあり
、イオンビーム７の進行方向を調整することができる。Of the extraction electrode system 6, 6', a potential several hundred volts more negative is applied to the electrode 6 than the other electrodes 6', so that the electrons generated on the right side of the figure do not rush into the ionization chamber 2 side (backflow). It's Nishide. An insulating support 8 connects the electrode 6 and another electrode 6', and the lead electrode threads 6, 6' are connected to the entire ionization chamber 2.
The relative positional relationship with the exit 5 of the ion beam 7 can be changed, and the traveling direction of the ion beam 7 can be adjusted.
耐高温性材料から々る絶縁支持９，９′はフィラメント
１をイオン化室２から絶縁しており、第１図のＡ−Ａ’
から左方を見た第２図で示す如くフィラメント１として
フィラメント素子１１．１２の２本を設けるときは、こ
の２本金相絶縁して保持できるものにする。々お、第２
図では絶縁支持体９，９′の記入は省いである。フィラ
メント素子１１．１２はイオン化室２の出口５から覗け
るイオン化室２の中心面に対し図の左、右にそれぞれ片
寄らせてを付けである。２本のフィラメント素子１１．
１２は先ずその片方のフィラメント素子１１だけを加熱
して電子を放出させイオンビームを発生させる。このフ
ィラメント素子１１を加熱するには給電線１３．１４間
に通電する。Insulating supports 9, 9' made of high temperature resistant material insulate the filament 1 from the ionization chamber 2 and are shown in FIG.
When two filament elements 11 and 12 are provided as the filament 1, as shown in FIG. 2 when viewed from the left side, the two filament elements 11 and 12 should be able to be held in a metal-insulated manner. Second, second
In the figure, the insulating supports 9, 9' are omitted. The filament elements 11 and 12 are offset to the left and right in the figure, respectively, with respect to the central plane of the ionization chamber 2 seen from the outlet 5 of the ionization chamber 2. Two filament elements 11.
12 first heats only one filament element 11 to emit electrons and generate an ion beam. To heat the filament element 11, electricity is passed between the power supply lines 13 and 14.
フィラメント素子１１の寿命が尽きた場合は給電線１５
．１６に通電１路を切り換えてフィラメント素子１２を
使用してイオンビームを発生させる。相導通させた給電
線１３．１５に相当する給電系１０、互いに別個の給電
線１４．１６から力る給電系１０′は第１図にも示しで
ある。第１図の引出電極系６，６′は使用するフィラメ
ント素子毎にイオンビーム７の進行方向を調整するよう
動かすことができる。When the life of the filament element 11 is over, the power supply line 15
．． 16, the ion beam is generated using the filament element 12. A power supply system 10 corresponding to the phase-conducted power supply lines 13.15 and a power supply system 10' which feeds from mutually separate power supply lines 14.16 are also shown in FIG. The extraction electrode system 6, 6' shown in FIG. 1 can be moved to adjust the traveling direction of the ion beam 7 for each filament element used.
上記のイオン源から発したイオンビーム７け通常のイオ
ン注入装置におけると同様に分析用マグネットで曲げて
所定のイオンだけを通り抜けさせターゲットのシリコン
ウェハ・上へ入射させるがこれらは図示してない。The 7 ion beams emitted from the above-mentioned ion source are bent by an analysis magnet in the same way as in a normal ion implanter, so that only predetermined ions pass through and are incident on the target silicon wafer, but these are not shown.
以上の実施例では、フィラメント１として２本のフィラ
メント素子１１．１２ｉ用いたが、本発明の装置は３本
以上のフィラメント素子を設けて構成してもよい。例え
ば３本のフィラメント素子を設ける場合には第２図のフ
ィラメント素子１１．１２の他にイオン化室２の出口５
から覗けるイオン化室２の中心面上の位置でフィラメン
ト素子１１．１２よりも出口５から見てイオン化室２の
奥の方にもう１本のフィラメント素子を設け、その一方
の給電線は給電線１３．１５と短絡接続し、他の給電線
は給電線１４や１６と切り換えて通電できるように構成
することができる。In the above embodiment, two filament elements 11 and 12i were used as the filament 1, but the apparatus of the present invention may be configured with three or more filament elements. For example, when three filament elements are provided, in addition to the filament elements 11 and 12 shown in FIG.
Another filament element is provided at a position on the central plane of the ionization chamber 2 that can be seen from the ionization chamber 2 at the back of the ionization chamber 2 when viewed from the outlet 5 than the filament elements 11 and 12, and one of the feeding lines is connected to the feeding line 13. .15, and the other power supply lines can be configured so that they can be switched to the power supply lines 14 and 16 and energized.
（発明の効果）
この発明によるイオン注入装置は複数本のフィラメント
素子を１本ずつ順番に使用して行くことができるので、
１本のフィラメント素子の寿命が来てもイオン源の真空
を大気中に戻して新しいフィラメント素子と交換すると
いうような交換操作は不要とかり、他のフィラメント素
子を通電加熱するよう電気回路を切り換えるだけですむ
。このため、フィラメント交撲頻度を大＠（フイラメン
ト素子２本を用いる場合は約２％ ３本の場合は約１１
以下同様）に減らし、イオン注入装置の稼動率を向上さ
せることができる。また複数本のフィラメント素子を同
時に通電加熱して、無理々く大電流のイオンビームを発
生させることもでき実用的効果の犬なるものである。(Effects of the Invention) Since the ion implantation apparatus according to the present invention can sequentially use a plurality of filament elements one by one,
Even when one filament element reaches the end of its life, there is no need to return the vacuum of the ion source to the atmosphere and replace it with a new filament element; instead, the electric circuit can be switched to heat the other filament element. That's all you need. For this reason, the frequency of filament crossing is increased (approximately 2% when using two filament elements, approximately 11% when using three filament elements).
(the same applies hereafter), thereby improving the operating rate of the ion implanter. Furthermore, it is possible to forcefully generate an ion beam with a large current by heating a plurality of filament elements at the same time, which is highly effective in practical applications.
第１図は本発明の一実施例の要部断面図、第２図は第１
図のＡ−Ａ’矢視図（要部正面図）である。
図において１・・・フィラメント（フィラメント素子１
１．１２からなる）、２・・・イオン化室、３・・・ガ
ス配管、４，４′・・・マグネット対、５・・・出口、
６．６’・・・引出電極系、１３，１４，１５．１６・
・・給電線である。
穿１図
招２図FIG. 1 is a cross-sectional view of essential parts of one embodiment of the present invention, and FIG.
It is an AA' arrow view (main part front view) of a figure. In the figure, 1... filament (filament element 1
1. Consisting of 12), 2... Ionization chamber, 3... Gas piping, 4, 4'... Magnet pair, 5... Outlet,
6.6'... Extraction electrode system, 13, 14, 15.16.
...It is a power supply line. 1 drawing, 2 drawings
Claims (1)
形イオン源を有するイオン注入装置。An ion implanter that has a hot cathode ion source with multiple filament elements installed in an ionization chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15058584A JPS6129057A (en) | 1984-07-20 | 1984-07-20 | Ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15058584A JPS6129057A (en) | 1984-07-20 | 1984-07-20 | Ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6129057A true JPS6129057A (en) | 1986-02-08 |
Family
ID=15500098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15058584A Pending JPS6129057A (en) | 1984-07-20 | 1984-07-20 | Ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6129057A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63139753U (en) * | 1987-03-06 | 1988-09-14 | ||
| JPH01296548A (en) * | 1988-05-25 | 1989-11-29 | Nec Kyushu Ltd | Ion implanter |
-
1984
- 1984-07-20 JP JP15058584A patent/JPS6129057A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63139753U (en) * | 1987-03-06 | 1988-09-14 | ||
| JPH01296548A (en) * | 1988-05-25 | 1989-11-29 | Nec Kyushu Ltd | Ion implanter |
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