TWI818252B

TWI818252B - Indirectly heated cathode ion source

Info

Publication number: TWI818252B
Application number: TW110114832A
Authority: TW
Inventors: 丹尼爾Ｒ泰格爾; 可勞斯貝克; 丹尼爾艾凡瑞朵
Original assignee: 美商瓦里安半導體設備公司
Priority date: 2017-06-05
Filing date: 2017-06-05
Publication date: 2023-10-11
Also published as: TW202131368A

Abstract

An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Description

間接加熱式陰極離子源Indirectly heated cathode ion source

本發明是有關於一種離子源，且特別是有關於一種將陰極電連接到腔室的壁以改善離子源的壽命的離子源。The present invention relates to an ion source, and more particularly to an ion source having a cathode electrically connected to a wall of a chamber to improve the life of the ion source.

可使用各種類型的離子源來生成在半導體處理設備中所使用的離子。舉例來說，伯納斯離子源是通過使電流通過設置在腔室中的細絲來工作。細絲發出電子來激發被引入到腔室中的氣體。可使用磁場來約束電子的路徑。在某些實施例中，電極也設置在腔室的一個或多個壁上。這些電極可被施加正偏壓或負偏壓，以控制離子及電子的位置，從而增大腔室中心附近的離子密度。提取開孔沿另一側設置且靠近腔室的中心，可經由所述提取開孔提取離子。Various types of ion sources can be used to generate ions used in semiconductor processing equipment. For example, a Berners ion source works by passing an electric current through a filament placed in a chamber. The filaments emit electrons to excite gas that is introduced into the chamber. Magnetic fields can be used to constrain the paths of electrons. In certain embodiments, electrodes are also disposed on one or more walls of the chamber. These electrodes can be biased positively or negatively to control the position of ions and electrons, thereby increasing the ion density near the center of the chamber. An extraction opening is provided along the other side and close to the center of the chamber through which ions can be extracted.

與伯納斯離子源相關的一個問題在於細絲的壽命。由於細絲暴露在腔室中，因此細絲會經受會縮短細絲壽命的濺射及其他現象。在一些實施例中，伯納斯離子源的壽命取決於細絲的壽命。One issue associated with Berners ion sources is filament lifetime. Because the filament is exposed to the chamber, the filament is subject to sputtering and other phenomena that shorten filament life. In some embodiments, the lifetime of the Berners ion source depends on the lifetime of the filament.

第二種類型的離子源是間接加熱式陰極（IHC）離子源。間接加熱式陰極離子源通過向設置在陰極後面的細絲供應電流來工作。細絲會發出熱電子（thermionic electron），熱電子朝陰極加速並對陰極進行加熱，此轉而會使陰極向離子源的腔室中發出電子。由於細絲受到陰極的保護，因此相對於伯納斯離子源來說，其壽命可延長。陰極設置在腔室的一端處。在與陰極相對的腔室的一端上通常設置有斥拒極（repeller）。陰極及斥拒極可被施加偏壓以斥拒電子，從而將電子向回朝腔室的中心引導。在一些實施例中，使用磁場來進一步將電子約束在腔室內。The second type of ion source is the indirectly heated cathode (IHC) ion source. Indirectly heated cathode ion sources work by supplying electrical current to a filament positioned behind the cathode. The filament emits thermal electrons, which accelerate toward the cathode and heat it, which in turn causes the cathode to emit electrons into the chamber of the ion source. Because the filament is protected by the cathode, its lifetime is extended relative to a Berners ion source. The cathode is disposed at one end of the chamber. A repeller is usually provided at one end of the chamber opposite the cathode. The cathode and repeller can be biased to repel electrons, directing them back toward the center of the chamber. In some embodiments, magnetic fields are used to further confine electrons within the chamber.

在某些實施例中，電極也設置在腔室的一個或多個側壁上。這些電極可被施加正偏壓或負偏壓，以控制離子及電子的位置，從而增大腔室中心附近的離子密度。提取開孔沿另一側設置且靠近腔室的中心，可經由所述提取開孔提取離子。In certain embodiments, electrodes are also disposed on one or more side walls of the chamber. These electrodes can be biased positively or negatively to control the position of ions and electrons, thereby increasing the ion density near the center of the chamber. An extraction opening is provided along the other side and close to the center of the chamber through which ions can be extracted.

與間接加熱式陰極離子源相關的一個問題在於陰極可具有有限的壽命。陰極在其背面上經受電子的轟擊，且在其正面上經受帶正電荷的離子的轟擊。離子轟擊會引起濺射，從而造成陰極的腐蝕。在許多實施例中，間接加熱式陰極離子源的壽命取決於陰極的壽命。在某些實施例中，來自等離子體的化學氣相沉積可使帶負電荷的陰極電連接到離子源的被接地的壁，從而導致離子源故障。One problem associated with indirectly heated cathode ion sources is that the cathode can have a limited life. The cathode is bombarded by electrons on its back side and by positively charged ions on its front side. Ion bombardment can cause sputtering, causing corrosion of the cathode. In many embodiments, the life of the indirectly heated cathode ion source depends on the life of the cathode. In certain embodiments, chemical vapor deposition from the plasma can electrically connect the negatively charged cathode to the grounded wall of the ion source, causing ion source malfunction.

因此，壽命增加的離子源可為有益的。另外，如果離子源在用於產生電子的元件上經歷更少的濺射，也將是有利的。Therefore, an ion source with increased lifetime may be beneficial. Additionally, it would be advantageous if the ion source experienced less sputtering on the components used to generate electrons.

本發明公開一種具有改善的壽命的離子源。在某些實施例中，所述離子源是間接加熱式陰極離子源，所述間接加熱式陰極離子源包括腔室，所述腔室具有多個導電壁，所述間接加熱式陰極離子源具有陰極，所述陰極電連接到所述離子源的壁。在所述離子源的一個或多個壁上設置有電極。電極中的至少一個被相對於腔室的壁施加偏壓。在某些實施例中，被吸引到陰極的正離子較少，從而減少陰極經歷的濺射量。有利的是，使用這種技術會改善陰極的壽命。在另一實施例中，離子源包括伯納斯離子源，所述伯納斯離子源包括具有細絲的腔室，所述細絲的一個側連接到離子源的壁。The present invention discloses an ion source with improved lifetime. In some embodiments, the ion source is an indirectly heated cathode ion source, the indirectly heated cathode ion source includes a chamber having a plurality of conductive walls, the indirectly heated cathode ion source has A cathode electrically connected to the wall of the ion source. Electrodes are provided on one or more walls of the ion source. At least one of the electrodes is biased relative to the wall of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, thereby reducing the amount of sputtering the cathode experiences. Advantageously, using this technique will improve the life of the cathode. In another embodiment, the ion source includes a Berners ion source including a chamber having a filament with one side connected to a wall of the ion source.

根據一個實施例，公開一種間接加熱式陰極離子源。所述間接加熱式陰極離子源包括：腔室，包括多個導電壁，所述腔室中被引入氣體；陰極，設置在所述腔室的一端上；細絲，設置在所述陰極後面；磁場，穿過所述腔室；頂壁，具有提取開孔；以及電極，在所述腔室中沿所述腔室的壁設置；其中相對於所述腔室對所述電極施加電壓，且所述陰極電連接到所述腔室。在一些實施例中，所述電極設置在與所述磁場平行的側壁上。在再一實施例中，在與所述電極相對的側壁上設置有第二電極，其中所述電極和所述第二電極之間的電場與所述磁場相互垂直。在某些實施例中，所述電極設置在所述頂壁上且位於所述提取開孔的相對兩側上。According to one embodiment, an indirectly heated cathode ion source is disclosed. The indirectly heated cathode ion source includes: a chamber including a plurality of conductive walls into which gas is introduced; a cathode disposed on one end of the chamber; a filament disposed behind the cathode; a magnetic field passing through the chamber; a top wall having an extraction opening; and an electrode disposed in the chamber along a wall of the chamber; wherein a voltage is applied to the electrode relative to the chamber, and The cathode is electrically connected to the chamber. In some embodiments, the electrodes are disposed on sidewalls parallel to the magnetic field. In yet another embodiment, a second electrode is provided on a side wall opposite to the electrode, wherein the electric field and the magnetic field between the electrode and the second electrode are perpendicular to each other. In certain embodiments, the electrodes are disposed on the top wall on opposite sides of the extraction opening.

在第二實施例中，公開一種間接加熱式陰極離子源。所述間接加熱式陰極離子源包括：腔室，包括多個導電壁，所述腔室中被引入氣體；陰極，設置在所述腔室的一個壁上；細絲，設置在所述陰極後面；磁場，穿過所述腔室；以及電極，在所述腔室中設置在與所述陰極相對的壁上；其中所述陰極設置在與所述磁場平行的壁上。在某些實施例中，所述陰極電連接到所述腔室。在某些實施例中，所述電極被相對於所述腔室施加正偏壓。In a second embodiment, an indirectly heated cathode ion source is disclosed. The indirectly heated cathode ion source includes: a chamber including a plurality of conductive walls into which gas is introduced; a cathode disposed on one wall of the chamber; and a filament disposed behind the cathode. ; A magnetic field passing through the chamber; and an electrode disposed in the chamber on a wall opposite to the cathode; wherein the cathode is disposed on a wall parallel to the magnetic field. In certain embodiments, the cathode is electrically connected to the chamber. In certain embodiments, the electrode is positively biased relative to the chamber.

在第三實施例中，公開一種伯納斯離子源。所述伯納斯離子源包括：腔室，包括多個導電壁，所述腔室中被引入氣體；細絲，設置在所述腔室的一端上；磁場，穿過所述腔室；頂壁，具有提取開孔；以及電極，沿所述腔室的壁設置；其中相對於所述腔室對所述電極施加電壓，且所述細絲的一個引線電連接到所述腔室。在某些實施例中，所述電極設置在與所述磁場平行的側壁上。在某些實施例中，在與所述電極相對的側壁上設置有第二電極，其中所述電極和所述第二電極之間的電場與所述磁場相互垂直。In a third embodiment, a Berners ion source is disclosed. The Berners ion source includes: a chamber including a plurality of conductive walls into which gas is introduced; a filament disposed on one end of the chamber; a magnetic field passing through the chamber; and a top a wall having an extraction opening; and an electrode disposed along the wall of the chamber; wherein a voltage is applied to the electrode relative to the chamber and one lead of the filament is electrically connected to the chamber. In some embodiments, the electrodes are disposed on sidewalls parallel to the magnetic field. In some embodiments, a second electrode is disposed on a side wall opposite the electrode, wherein the electric field and the magnetic field between the electrode and the second electrode are perpendicular to each other.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, embodiments are given below and described in detail with reference to the accompanying drawings.

如上所述，離子源可易於因濺射（尤其是發生在用於產生電子的元件上的濺射）效應而引起壽命縮短。通常，在經過一段時間後，這些組件會失效。在某些實施例中，間接加熱式陰極離子源的故障是由陰極與離子源的壁之間的電短路、或者斥拒極與離子源的壁之間的電短路造成的。相似地，伯納斯離子源可易於因在細絲上發生的濺射效應而引起壽命縮短。As mentioned above, ion sources can be susceptible to shortened lifetimes due to sputtering effects, particularly those that occur on components used to generate electrons. Often, over time, these components fail. In some embodiments, failure of an indirectly heated cathode ion source is caused by an electrical short between the cathode and the walls of the ion source, or between the repulsion and the walls of the ion source. Similarly, Berners ion sources can be susceptible to lifetime shortening due to sputtering effects on the filaments.

圖1示出克服這些問題的間接加熱式陰極離子源10。圖4是間接加熱式陰極離子源10的剖視圖。間接加熱式陰極離子源10包括腔室100，腔室100包括相對的兩端以及連接到這些端的側壁101。腔室100也包括底壁102及頂壁103。腔室的各個壁可由導電材料構成且可彼此電通訊。在腔室100中，在腔室100的第一端104處設置有陰極110。在陰極110後面設置有細絲160。細絲160與細絲電源165通訊。細絲電源165被配置成使電流通過細絲160，以使得細絲160發出熱電子。陰極偏壓電源115相對於陰極110對細絲160施加負偏壓，因此這些熱電子從細絲160朝陰極110加速並在這些熱電子撞擊陰極110的背面時對陰極110進行加熱。陰極偏壓電源115可對細絲160施加偏壓，以使細絲160具有例如比陰極110的電壓負200V至負1500V之間的電壓。陰極110接著在其正面上向腔室100中發出熱電子。Figure 1 shows an indirectly heated cathode ion source 10 that overcomes these problems. FIG. 4 is a cross-sectional view of the indirectly heated cathode ion source 10 . The indirectly heated cathode ion source 10 includes a chamber 100 including two opposite ends and side walls 101 connected to the ends. The chamber 100 also includes a bottom wall 102 and a top wall 103 . The various walls of the chamber may be constructed of electrically conductive material and may be in electrical communication with each other. In the chamber 100, a cathode 110 is disposed at a first end 104 of the chamber 100. A filament 160 is provided behind the cathode 110 . Filament 160 communicates with filament power source 165. Filament power supply 165 is configured to pass electrical current through filament 160 such that filament 160 emits hot electrons. Cathode bias power supply 115 negatively biases filament 160 relative to cathode 110 so these hot electrons accelerate from filament 160 toward cathode 110 and heat cathode 110 as they impact the backside of cathode 110 . Cathode bias power supply 115 may bias filament 160 such that filament 160 has a voltage that is, for example, between negative 200V and negative 1500V relative to the voltage of cathode 110 . The cathode 110 then emits hot electrons into the chamber 100 on its front side.

因此，細絲電源165將電流供應至細絲160。陰極偏壓電源115對細絲160施加偏壓以使細絲160具有比陰極110更負的值，進而使得電子被從細絲160朝陰極110吸引。另外，陰極110電連接到腔室100，以與腔室100的壁處於同一電壓。在某些實施例中，腔室100連接至電接地點（electrical ground）。Therefore, filament power supply 165 supplies current to filament 160 . Cathode bias power supply 115 biases filament 160 so that filament 160 has a more negative value than cathode 110 , thereby causing electrons to be attracted from filament 160 toward cathode 110 . Additionally, cathode 110 is electrically connected to chamber 100 to be at the same voltage as the walls of chamber 100 . In some embodiments, chamber 100 is connected to electrical ground.

在這個實施例中，在腔室100中，在腔室100的與陰極110相對的第二端105上設置有斥拒極120。斥拒極120可與斥拒極電源125通訊。顧名思義，斥拒極120用於將從陰極110發出的電子向回朝腔室100的中心斥拒。舉例來說，可相對於腔室100來對斥拒極120施加負的偏壓以斥拒電子。舉例來說，斥拒極電源125可具有處於0V至-150V範圍中的輸出，但是也可使用其他電壓。在某些實施例中，相對於腔室100對斥拒極120施加介於0V與-150V之間的偏壓。在某些實施例中，斥拒極120可相對於腔室100浮動。換句話說，當浮動時，斥拒極120不電連接至斥拒極電源125或腔室100。在這個實施例中，斥拒極120的電壓趨於向接近陰極110的電壓漂移。In this embodiment, in the chamber 100, a repellent electrode 120 is provided on the second end 105 of the chamber 100 opposite the cathode 110. The repeller 120 can communicate with the repeller power supply 125 . As the name suggests, repellent 120 is used to repel electrons emitted from cathode 110 back toward the center of chamber 100 . For example, the repeller 120 may be negatively biased relative to the chamber 100 to repel electrons. For example, repeller power supply 125 may have an output in the range of 0V to -150V, although other voltages may be used. In some embodiments, repeller 120 is biased between 0V and -150V relative to chamber 100 . In some embodiments, repeller 120 may float relative to chamber 100 . In other words, when floating, repeller 120 is not electrically connected to repeller power supply 125 or chamber 100 . In this embodiment, the voltage of the repellent 120 tends to drift closer to the voltage of the cathode 110 .

在某些實施例中，在腔室100中產生磁場190。這一磁場旨在沿一個方向約束電子。磁場190通常自第一端104到第二端105與側壁101平行地分佈。舉例來說，電子可被約束在與從陰極110到斥拒極120的方向（即，y方向）平行的列中。因此，電子不會經歷任何電磁力以在y方向上移動。然而，電子在其他方向上的移動可經歷電磁力。In certain embodiments, magnetic field 190 is generated in chamber 100 . This magnetic field is designed to confine electrons in one direction. The magnetic field 190 is generally distributed parallel to the side wall 101 from the first end 104 to the second end 105 . For example, electrons may be confined in columns parallel to the direction from cathode 110 to repeller 120 (ie, the y-direction). Therefore, the electron does not experience any electromagnetic force to move in the y direction. However, electrons moving in other directions can experience electromagnetic forces.

在圖1所示的實施例中，在腔室100的側壁101上可設置有電極130A、130B，從而使電極130A、130B位於腔室100內。電極130A、130B可被電源施加偏壓。在某些實施例中，電極130A、130B可與共用電源通訊。然而，在其他實施例中，為使對間接加熱式陰極離子源10的輸出進行調節的靈活性及能力最大化，電極130A、130B可分別與各自的電極電源135A、135B通訊。In the embodiment shown in FIG. 1 , electrodes 130A and 130B may be provided on the side wall 101 of the chamber 100 so that the electrodes 130A and 130B are located in the chamber 100 . Electrodes 130A, 130B may be biased by a power source. In some embodiments, electrodes 130A, 130B may be in communication with a common power source. However, in other embodiments, to maximize the flexibility and ability to adjust the output of the indirectly heated cathode ion source 10, the electrodes 130A, 130B may communicate with respective electrode power supplies 135A, 135B, respectively.

如同斥拒極電源125一般，電極電源135A、135B用於相對於腔室100對電極130A、130B施加偏壓。在某些實施例中，電極電源135A、135B可相對於腔室100對電極130A、130B施加正偏壓或負偏壓。在某些實施例中，電極130A、130B中的至少一個可被相對於腔室100施加介於40伏與500伏之間的偏壓。Like repeller power supply 125 , electrode power supplies 135A, 135B are used to bias electrodes 130A, 130B relative to chamber 100 . In certain embodiments, electrode power supply 135A, 135B may positively or negatively bias electrodes 130A, 130B relative to chamber 100. In certain embodiments, at least one of electrodes 130A, 130B may be biased relative to chamber 100 between 40 volts and 500 volts.

陰極110、斥拒極120及電極130A、130B中的每一個由例如金屬等導電材料製成。Each of the cathode 110, the repeller 120, and the electrodes 130A, 130B is made of a conductive material such as metal.

在被指為頂壁103的腔室100的另一側上可設置有提取開孔140。在圖1中，提取開孔140設置在與X-Y平面（平行於頁面）平行的側上。此外，儘管圖中未示出，然而間接加熱式陰極離子源10還包括進氣口（gas inlet），要被離子化的氣體經由所述進氣口被引入到腔室100中。An extraction opening 140 may be provided on the other side of the chamber 100 referred to as the top wall 103 . In Figure 1, the extraction opening 140 is provided on a side parallel to the X-Y plane (parallel to the page). In addition, although not shown in the figure, the indirectly heated cathode ion source 10 further includes a gas inlet through which gas to be ionized is introduced into the chamber 100 .

控制器180可與所述電源中的一個或多個通訊，從而使得可修改由這些電源供應的電壓或電流。控制器180可包括處理單元，例如微控制器、個人電腦、專用控制器或另一種合適的處理單元。控制器180也可包括非暫時性記憶元件，例如半導體記憶體、磁性記憶體或另一種合適的記憶體。這個非暫時性記憶元件可含有指令及其他資料，所述指令及其他資料使控制器180能夠執行本文所述功能。Controller 180 may communicate with one or more of the power supplies such that the voltage or current supplied by the power supplies may be modified. Controller 180 may include a processing unit such as a microcontroller, a personal computer, a special purpose controller, or another suitable processing unit. Controller 180 may also include non-transitory memory elements, such as semiconductor memory, magnetic memory, or another suitable memory. This non-transitory memory element may contain instructions and other data that enable controller 180 to perform the functions described herein.

控制器180可用來選擇將由陰極偏壓電源115、細絲電源165、電極電源135A、135B及斥拒極電源125供應的初始電壓或電流。這一初始電壓可基於正在使用的氣體的類型、或者基於將從間接加熱式陰極離子源10提取的離子的類型。另外，在某些實施例中，控制器也可監測所提取離子束的電流。基於所監測的提取電流，控制器180可至少使由細絲電源165供應的電流變化以獲得需要的提取電流。Controller 180 may be used to select the initial voltage or current to be supplied by cathode bias power supply 115, filament power supply 165, electrode power supplies 135A, 135B, and repeller power supply 125. This initial voltage may be based on the type of gas being used, or on the type of ions to be extracted from the indirectly heated cathode ion source 10 . Additionally, in some embodiments, the controller may also monitor the current of the extracted ion beam. Based on the monitored extraction current, the controller 180 may vary at least the current supplied by the filament power supply 165 to obtain the desired extraction current.

在運作期間，細絲電源165使電流通過細絲160，此會使細絲160發出熱離子電子。這些電子撞擊可具有比細絲160更大的正值的陰極110的背面，從而使陰極110被加熱，此轉而使陰極110向腔室100中發出電子。這些電子與經由進氣口而被饋送至腔室100中的氣體分子碰撞。這些碰撞會生成正離子，從而形成等離子體150。可通過由斥拒極120、及電極130A、130B生成的電場來約束及操控等離子體150。另外，在某些實施例中，電子及正離子可在某種程度上受磁場190約束。在某些實施例中，等離子體150被約束在腔室100的中心附近、靠近提取開孔140。During operation, filament power supply 165 passes electrical current through filament 160, which causes filament 160 to emit thermionic electrons. These electrons strike the back of cathode 110 , which may have a greater positive value than filament 160 , causing cathode 110 to heat, which in turn causes cathode 110 to emit electrons into chamber 100 . These electrons collide with gas molecules fed into the chamber 100 via the gas inlet. These collisions generate positive ions, forming a plasma 150 . Plasma 150 may be confined and manipulated by the electric field generated by repellent 120 and electrodes 130A, 130B. Additionally, in some embodiments, electrons and positive ions may be bound by the magnetic field 190 to some extent. In some embodiments, plasma 150 is confined near the center of chamber 100, close to extraction opening 140.

由於陰極110未相對於腔室100被施加偏壓，因此被陰極110吸引的正離子較少且這些離子具有較低的能量，因此它們較少地發生濺射。因此，濺射量可減少且陰極110的壽命可延長。另外，即使在存在濺射時，電短路的風險也會在陰極110與腔室100的壁處於同一電壓時得到消除。Because the cathode 110 is not biased relative to the chamber 100, fewer positive ions are attracted to the cathode 110 and these ions have lower energy, so they sputter less frequently. Therefore, the amount of sputtering can be reduced and the life of the cathode 110 can be extended. Additionally, even when sputtering is present, the risk of electrical shorting is eliminated when the cathode 110 and the walls of the chamber 100 are at the same voltage.

在這個實施例中，電子可被相對於腔室100施加正偏壓的電極130A吸引。然而，電子需要克服電磁力以穿越磁場190。因此，對磁場190的強度及由電極電源135A施加的正電壓的選擇決定了當電子朝電極130A被吸引時電子的速度及能量。在對電極130A施加低的正偏壓情況下的較強的磁場將減少能夠穿越磁場190的電子量。相反，與施加至電極130A的較大偏壓進行耦合的弱磁場將使得以較高速度移動的更多電子能夠朝電極130A移動。In this embodiment, electrons may be attracted to electrode 130A which is positively biased relative to chamber 100. However, electrons need to overcome electromagnetic forces to traverse magnetic fields190. Therefore, the choice of the strength of magnetic field 190 and the positive voltage applied by electrode power supply 135A determines the speed and energy of electrons as they are attracted toward electrode 130A. A stronger magnetic field with a low forward bias applied to electrode 130A will reduce the number of electrons able to traverse magnetic field 190 . Conversely, a weaker magnetic field coupled with a larger bias voltage applied to electrode 130A will enable more electrons moving at higher speeds toward electrode 130A.

因此，通過改變磁場190的強度及由電極電源135A施加的電壓，可對電子的速度及能量進行操控。這使得間接加熱式陰極離子源10適用於多電荷離子、單體及離子化分子。Therefore, by changing the strength of the magnetic field 190 and the voltage applied by the electrode power supply 135A, the speed and energy of the electrons can be manipulated. This makes the indirectly heated cathode ion source 10 suitable for multiply charged ions, monomers and ionized molecules.

舉例來說，對於單電荷離子來說，可將富氣（rich gas）與弱磁場搭配使用。在某些實施例中，可藉由電極電源135A施加第一電壓。對於多電荷離子來說，可將貧氣（lean gas）與強磁場搭配使用。在這個實施例中，被施加至電極130A的電壓可大於第一電壓。較強的磁場可使得發生更多碰撞，從而生成多電荷物質。For example, for singly charged ions, a rich gas can be used with a weak magnetic field. In some embodiments, the first voltage may be applied by electrode power supply 135A. For multiply charged ions, a lean gas can be used in conjunction with a strong magnetic field. In this embodiment, the voltage applied to electrode 130A may be greater than the first voltage. Stronger magnetic fields allow more collisions to occur, creating multiply charged species.

圖1示出其中陰極110電連接到腔室100、而斥拒極120及電極130A、130B均被相對於腔室100分別使用斥拒極電源125、及電極電源135A、135B獨立地施加偏壓的間接加熱式陰極離子源10的實施例。圖2示出根據另一實施例的間接加熱式陰極離子源11。相似的元件被賦予相同的參考指示符。間接加熱式陰極離子源11具有陰極110及斥拒極120，陰極110及斥拒極120二者均電連接至腔室100。另外，電極130B中的一個也電連接到腔室100。換句話說，陰極110、斥拒極120、電極130B及腔室100的壁均處於同一電壓。因此，可省略電極電源135B及斥拒極電源125。FIG. 1 shows a diagram in which cathode 110 is electrically connected to chamber 100 and repulser 120 and electrodes 130A, 130B are independently biased relative to chamber 100 using repulser power supply 125 and electrode power supplies 135A, 135B, respectively. An embodiment of an indirectly heated cathode ion source 10. Figure 2 shows an indirectly heated cathode ion source 11 according to another embodiment. Similar elements are assigned the same reference designator. The indirectly heated cathode ion source 11 has a cathode 110 and a repeller 120 , both of which are electrically connected to the chamber 100 . Additionally, one of the electrodes 130B is also electrically connected to the chamber 100 . In other words, the cathode 110, the repeller 120, the electrode 130B and the wall of the chamber 100 are all at the same voltage. Therefore, the electrode power supply 135B and the repeller power supply 125 can be omitted.

在這個實施例中，僅電極130A被相對於腔室100施加偏壓。電極130A可相對於腔室100被施加介於40伏與500伏之間的正偏壓。因此，腔室100內的電場僅由電極130A生成。另外，電極130A與電極130B之間的電場與磁場190垂直。具體來說，磁場190位於Y方向上，而電極130A與電極130B之間的電場處於X方向上。因此，電磁力主要位於Z方向上。在一些實施例中，電磁力向上朝向提取開孔140。In this embodiment, only electrode 130A is biased relative to chamber 100 . Electrode 130A may be positively biased relative to chamber 100 between 40 volts and 500 volts. Therefore, the electric field within chamber 100 is generated only by electrode 130A. In addition, the electric field between electrode 130A and electrode 130B is perpendicular to magnetic field 190 . Specifically, the magnetic field 190 is in the Y direction, and the electric field between electrode 130A and electrode 130B is in the X direction. Therefore, the electromagnetic force is mainly located in the Z direction. In some embodiments, the electromagnetic force is directed upward toward the extraction opening 140 .

圖3示出圖2所示間接加熱式陰極離子源11的變化。在圖3中，省略了間接加熱式陰極離子源12的斥拒極。由於圖2所示斥拒極120與腔室100處於同一電壓，因此在圖3中省略斥拒極不會改變間接加熱式陰極離子源12的運行。換句話說，在這兩個實施例中，與陰極110相對的第二端105被偏壓成與腔室100的壁相同的電壓。FIG. 3 shows changes of the indirectly heated cathode ion source 11 shown in FIG. 2 . In FIG. 3 , the repellent electrode of the indirectly heated cathode ion source 12 is omitted. Since the repulser 120 shown in FIG. 2 is at the same voltage as the chamber 100 , omitting the repulser 120 in FIG. 3 does not change the operation of the indirectly heated cathode ion source 12 . In other words, in both embodiments, the second end 105 opposite the cathode 110 is biased to the same voltage as the wall of the chamber 100 .

圖4示出沿圖1所示線AA截取的間接加熱式陰極離子源10的剖視圖。在這個圖中，陰極110被示出為倚靠間接加熱式陰極離子源10的第一端104。電極130A及130B被示出為位於腔室100的兩個相對的側壁101上。磁場190被示出為在Y方向上指向頁面之外。在某些實施例中，電極130A、130B可分別使用絕緣體133A、133B來與腔室100的側壁101分開。可通過使導電材料從腔室100的外部經由絕緣體133A、133B到達各自的電極130A、130B來形成從電極電源135A、135B到電極130A、130B的電連接。在某些實施例中，電極130B可與腔室100電通訊。在這些實施例中，可不採用絕緣體133B且可倚靠側壁101設置電極130B。另外，在某些實施例中，由於電極130B與側壁101處於同一電壓，因此可省略電極130B。FIG. 4 shows a cross-sectional view of the indirectly heated cathode ion source 10 taken along line AA shown in FIG. 1 . In this figure, the cathode 110 is shown resting against the first end 104 of the indirectly heated cathode ion source 10 . Electrodes 130A and 130B are shown on two opposing side walls 101 of the chamber 100 . Magnetic field 190 is shown pointing away from the page in the Y direction. In some embodiments, electrodes 130A, 130B may be separated from sidewall 101 of chamber 100 using insulators 133A, 133B, respectively. Electrical connections from the electrode power sources 135A, 135B to the electrodes 130A, 130B may be made by passing conductive material from outside the chamber 100 through the insulators 133A, 133B to the respective electrodes 130A, 130B. In certain embodiments, electrode 130B may be in electrical communication with chamber 100. In these embodiments, insulator 133B may not be used and electrode 130B may be positioned against sidewall 101 . Additionally, in some embodiments, since the electrode 130B is at the same voltage as the sidewall 101, the electrode 130B may be omitted.

另外，在某些實施例中，不採用絕緣體133A、133B。而是，如果電極130A被相對於腔室100施加偏壓，則電極130A可與腔室100的壁間隔開。Additionally, in some embodiments, insulators 133A, 133B are not used. Rather, if electrode 130A is biased relative to chamber 100 , electrode 130A may be spaced apart from the walls of chamber 100 .

儘管圖1至圖4均示出電極130A、130B沿腔室100的相對的側壁101設置，然而也可能存在其他實施例。圖5示出這種實施例。圖5是間接加熱式陰極離子源14的剖視圖。除了電極230的位置之外，這個間接加熱式陰極離子源14在大多數方面與其他間接加熱式陰極離子源相似。在這個實施例中，電極230設置在腔室100的其中設置有提取開孔140的頂壁103上。電極230可使用絕緣體233來與頂壁103絕緣。在一些實施例中，電極230可設置在腔室100內且環繞整個提取開孔140。在其他實施例中，電極230可在腔室100內設置在提取開孔140的相對的側壁上。因此，電場在靠近提取開孔140處最強。相對於圖4所示構型來說，這種構型可增大離子束電流或能量。Although FIGS. 1-4 each show electrodes 130A, 130B disposed along opposing side walls 101 of chamber 100, other embodiments are possible. Figure 5 illustrates such an embodiment. FIG. 5 is a cross-sectional view of the indirectly heated cathode ion source 14. Except for the location of electrode 230, this indirectly heated cathode ion source 14 is similar in most respects to other indirectly heated cathode ion sources. In this embodiment, the electrode 230 is provided on the top wall 103 of the chamber 100 in which the extraction opening 140 is provided. Electrode 230 may be insulated from top wall 103 using insulator 233. In some embodiments, the electrode 230 may be disposed within the chamber 100 and surround the entire extraction opening 140 . In other embodiments, electrodes 230 may be disposed on opposing side walls of extraction opening 140 within chamber 100 . Therefore, the electric field is strongest near the extraction opening 140. This configuration can increase the ion beam current or energy relative to the configuration shown in Figure 4.

圖6示出間接加熱式陰極離子源15的另一個實施例。在這個實施例中，陰極210及細絲160已從間接加熱式陰極離子源15的一端移動到與電極130A相對的側壁101。換句話說，陰極210設置在與磁場190平行的側壁101上。因此，不同於前面的實施例，從陰極210發出的電子會立即遇到磁場190。因此，由電極電源135A施加至電極130A的電壓可足夠大以吸引所發出的電子穿越磁場190。作為另外一種選擇或另外地，磁場190可相對弱以使電子朝電極130A穿越所述場。在這個實施例中，通常含有陰極及斥拒極的間接加熱式陰極離子源15的兩端可不含有陰極及斥拒極。Figure 6 shows another embodiment of an indirectly heated cathode ion source 15. In this embodiment, the cathode 210 and the filament 160 have been moved from one end of the indirectly heated cathode ion source 15 to the side wall 101 opposite the electrode 130A. In other words, the cathode 210 is disposed on the side wall 101 parallel to the magnetic field 190 . Therefore, unlike the previous embodiment, electrons emitted from cathode 210 immediately encounter magnetic field 190. Therefore, the voltage applied to electrode 130A by electrode power supply 135A may be large enough to attract emitted electrons across magnetic field 190 . Alternatively or additionally, magnetic field 190 may be relatively weak to cause electrons to traverse the field toward electrode 130A. In this embodiment, the two ends of the indirectly heated cathode ion source 15 that usually includes a cathode and a repeller may not include a cathode and a repeller.

本申請中的上述實施例可具有許多優點。首先，由於電極電連接到腔室，因此不會出現陰極與腔室的壁之間的短路問題，從而會消除間接加熱式陰極離子源故障的常見原因。第二，由於陰極電連接到腔室，因此被吸引到陰極的正離子較少，從而減少陰極所經受的濺射量。第三，相對於傳統間接加熱式陰極離子源來說，達成相等的提取電流所需的源功率（source power）降低，從而同樣會促成較長的離子源壽命。另外，根據本文所述實施例的離子源同樣良好地適用於多電荷物質、單體物質及分子物質。實驗資料已表明本文所述離子源以最少到30%的源功率提供最多達40%的束電流。The above-described embodiments in the present application may have many advantages. First, because the electrodes are electrically connected to the chamber, there is no short circuit problem between the cathode and the chamber wall, thus eliminating a common cause of failure in indirectly heated cathode ion sources. Second, because the cathode is electrically connected to the chamber, fewer positive ions are attracted to the cathode, thereby reducing the amount of sputtering the cathode experiences. Third, compared to traditional indirectly heated cathode ion sources, the source power required to achieve equivalent extraction current is reduced, which also contributes to longer ion source life. In addition, ion sources according to embodiments described herein are equally well suited for multiply charged species, monomeric species, and molecular species. Experimental data have shown that the ion source described herein provides up to 40% of the beam current at a minimum of 30% of the source power.

將用於產生電子的元件維持在腔室電壓或接近腔室電壓的電壓的概念也可應用於其他離子源。圖7示出根據一個實施例的伯納斯離子源300。The concept of maintaining the components used to generate electrons at or near the chamber voltage can be applied to other ion sources as well. Figure 7 illustrates a Berners ion source 300 according to one embodiment.

如同圖3所示間接加熱式陰極離子源一般，伯納斯離子源300包括腔室310，腔室310具有多個導電壁。伯納斯離子源300可具有斥拒極或可不具有斥拒極。另外，電極330A、330B可設置在相對的側壁301上。伯納斯離子源300包括細絲360，細絲360與細絲電源365通訊。細絲電源365的正端子與細絲360的一個引線通訊且也與腔室310的壁通訊。細絲電源365的負端子與細絲360的另一個引線通訊。細絲360的引線兩端的電壓可小於10伏。細絲360可設置在腔室310的第一端304處。Like the indirectly heated cathode ion source shown in Figure 3, Berners ion source 300 includes a chamber 310 having a plurality of conductive walls. Berners ion source 300 may or may not have a repulsive reject. In addition, electrodes 330A, 330B may be disposed on opposite side walls 301. Berners ion source 300 includes filament 360 in communication with filament power supply 365 . The positive terminal of filament power supply 365 communicates with one lead of filament 360 and also with the wall of chamber 310 . The negative terminal of filament power supply 365 communicates with the other lead of filament 360. The voltage across the leads of filament 360 may be less than 10 volts. Filament 360 may be disposed at first end 304 of chamber 310 .

也可從伯納斯離子源300的第一端304朝與第一端304相對的第二端305施加磁場390。如同上述間接加熱式陰極離子源一般，電子可在某種程度上被約束成取向為y方向的列中。電極330A可被相對於腔室310施加正偏壓，且可設置在側壁301上。The magnetic field 390 may also be applied from the first end 304 of the Berners ion source 300 toward the second end 305 opposite the first end 304 . As with the indirectly heated cathode ion source described above, the electrons can be constrained to some extent into columns oriented in the y direction. Electrode 330A may be positively biased relative to chamber 310 and may be disposed on sidewall 301 .

在工作期間，細絲電源365使電流通過細絲360，此會使細絲360發出熱電子。這些電子與經由進氣口被饋送至腔室310中的氣體分子碰撞。這些碰撞會生成正離子，從而形成等離子體350。可通過由電極330A、330B生成的電場來約束及操控等離子體350。如同間接加熱式陰極離子源一般，電極330A可與電極電源335A通訊。另外，在某些實施例中，電子及正離子可在某種程度上受磁場390約束。在某些實施例中，等離子體350被約束在腔室310的中心附近、靠近提取開孔340。During operation, filament power source 365 passes electrical current through filament 360, which causes filament 360 to emit hot electrons. These electrons collide with gas molecules fed into the chamber 310 via the gas inlet. These collisions generate positive ions, forming a plasma 350 . Plasma 350 may be confined and manipulated by the electric field generated by electrodes 330A, 330B. Like an indirectly heated cathode ion source, electrode 330A can communicate with electrode power source 335A. Additionally, in some embodiments, electrons and positive ions may be bound by the magnetic field 390 to some extent. In some embodiments, plasma 350 is confined near the center of chamber 310, close to extraction opening 340.

控制器180的功能可如上所述。The function of controller 180 may be as described above.

由於細絲360的一個引線電連接到腔室310，因此被吸引到細絲360的正離子較少。因此，濺射量可減少且細絲360的壽命可延長。Because one lead of filament 360 is electrically connected to chamber 310, fewer positive ions are attracted to filament 360. Therefore, the amount of sputtering can be reduced and the life of filament 360 can be extended.

儘管圖7示出具有電連接到腔室310的電極330B而不具有斥拒極的伯納斯離子源300，然而也可能存在其他實施例。舉例來說，圖1及圖2所示陰極110、陰極偏壓電源115、細絲160及細絲電源165可由圖7所示細絲360及細絲電源365取代。換句話說，在某些實施例中，伯納斯離子源可包括接地至腔室的斥拒極、或者與斥拒極電源通訊的斥拒極。另外，在某些實施例中，電極330B可與電極電源通訊。Although FIG. 7 illustrates Berners ion source 300 with electrode 330B electrically connected to chamber 310 without a repeller, other embodiments are possible. For example, the cathode 110, cathode bias power supply 115, filament 160 and filament power supply 165 shown in FIGS. 1 and 2 may be replaced by the filament 360 and filament power supply 365 shown in FIG. 7 . In other words, in some embodiments, a Berners ion source may include a repeller grounded to the chamber, or a repeller in communication with a repeller power source. Additionally, in some embodiments, electrode 330B can communicate with an electrode power source.

另外，可通過修改圖7所示的伯納斯離子源300，以類似於圖5所示的電極230的位置，將電極330A設置在頂壁上。Additionally, the Berners ion source 300 shown in FIG. 7 can be modified to position the electrode 330A on the top wall similar to the position of the electrode 230 shown in FIG. 5 .

如同前面闡述的間接加熱式陰極離子源一般，本申請中的上述伯納斯離子源的實施例可具有許多優點。舉例來說，由於細絲的一個引線電連接到腔室，因此被吸引到細絲的正離子較少，從而減少細絲所經受的濺射量。濺射的這一減少可延長細絲的壽命。As with the indirectly heated cathode ion source described above, the Berners ion source embodiment described above in this application may have many advantages. For example, because one lead of the filament is electrically connected to the chamber, fewer positive ions are attracted to the filament, thereby reducing the amount of sputtering that the filament experiences. This reduction in sputtering extends the life of the filament.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above through embodiments, they are not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

10、11、12、14、15:間接加熱式陰極離子源 100、310:腔室 101、301:側壁 102:底壁 103:頂壁 104、304:第一端 105、305:第二端 110、210:陰極 115:陰極偏壓電源 120:斥拒極 125:斥拒極電源 130A、130B、230、330A、330B:電極 133A、133B、233:絕緣體 135A、135 B、335A:電極電源 140、340:提取開孔 150、350:等離子體 160、360:細絲 165、365:細絲電源 180:控制器 190、390:磁場 300:伯納斯離子源 X、Y、Z:方向10, 11, 12, 14, 15: Indirectly heated cathode ion source 100, 310: Chamber 101, 301: Side wall 102: Bottom wall 103: Top wall 104, 304: first end 105, 305: second end 110, 210: cathode 115:Cathode bias power supply 120:Rejection 125: Repulsion power supply 130A, 130B, 230, 330A, 330B: Electrode 133A, 133B, 233: Insulator 135A, 135 B, 335A: Electrode power supply 140, 340: Extract openings 150, 350: Plasma 160, 360: filament 165, 365: Filament power supply 180:Controller 190, 390: Magnetic field 300: Berners ion source X, Y, Z: direction

圖1是根據一個實施例的間接加熱式陰極（IHC）離子源。圖2是根據另一實施例的間接加熱式陰極離子源。圖3是根據另一實施例的間接加熱式陰極離子源。圖4是圖1所示間接加熱式陰極離子源的剖視圖。圖5是根據另一實施例的間接加熱式陰極離子源的剖視圖。圖6是根據另一實施例的間接加熱式陰極離子源。圖7是根據另一實施例的離子源。Figure 1 is an indirectly heated cathode (IHC) ion source according to one embodiment. Figure 2 is an indirectly heated cathode ion source according to another embodiment. Figure 3 is an indirectly heated cathode ion source according to another embodiment. FIG. 4 is a cross-sectional view of the indirectly heated cathode ion source shown in FIG. 1 . Figure 5 is a cross-sectional view of an indirectly heated cathode ion source according to another embodiment. Figure 6 is an indirectly heated cathode ion source according to another embodiment. Figure 7 is an ion source according to another embodiment.

10:間接加熱式陰極離子源 10:Indirectly heated cathode ion source

100:腔室 100: Chamber

101:側壁 101:Side wall

104:第一端 104:First end

105:第二端 105:Second end

110:陰極 110:Cathode

115:陰極偏壓電源 115:Cathode bias power supply

120:斥拒極 120:Rejection

125:斥拒極電源 125: Repulsion power supply

130A、130B:電極 130A, 130B: Electrode

135A、135B:電極電源 135A, 135B: Electrode power supply

140:提取開孔 140:Extract opening

150:等離子體 150:Plasma

160:細絲 160: filament

165:細絲電源 165: Filament power supply

180:控制器 180:Controller

190:磁場 190:Magnetic field

X、Y、Z:方向 X, Y, Z: direction

Claims

一種間接加熱式陰極離子源，包括：腔室，包括相對的兩端以及連接所述相對的兩端的兩個側壁；陰極，設置在所述腔室的所述相對的兩端的其中一端上；細絲，設置在所述陰極後面；磁場，穿過所述腔室且平行於所述兩個側壁；以及電極，設置在所述腔室中且設置在所述腔室的所述兩個側壁中的第一個上；其中對所述電極施加電壓以使所述電極相對於所述腔室被施加電偏壓，且所述陰極電連接到所述腔室。 An indirectly heated cathode ion source includes: a chamber including two opposite ends and two side walls connecting the opposite ends; a cathode arranged on one of the opposite ends of the chamber; a wire disposed behind the cathode; a magnetic field passing through the chamber and parallel to the two side walls; and an electrode disposed in the chamber and disposed in the two side walls of the chamber The first one; wherein a voltage is applied to the electrode such that the electrode is electrically biased relative to the chamber, and the cathode is electrically connected to the chamber.

如申請專利範圍第1項所述的間接加熱式陰極離子源，其中斥拒極設置在所述腔室的所述相對的兩端的第二個上。 The indirectly heated cathode ion source as described in item 1 of the patent application, wherein the repellent electrode is disposed on the second of the two opposite ends of the chamber.

如申請專利範圍第2項所述的間接加熱式陰極離子源，其中所述斥拒極電連接至所述腔室。 For the indirectly heated cathode ion source described in item 2 of the patent application, the repellent electrode is electrically connected to the chamber.

如申請專利範圍第1項所述的間接加熱式陰極離子源，斥拒極未設置在所述腔室中。 For example, in the indirectly heated cathode ion source described in item 1 of the patent application, the repellent electrode is not disposed in the chamber.

如申請專利範圍第1項所述的間接加熱式陰極離子源，所述電極相對於所述腔室被施加正偏壓。 For example, in the indirectly heated cathode ion source described in item 1 of the patent application, a positive bias voltage is applied to the electrode relative to the chamber.

如申請專利範圍第1項所述的間接加熱式陰極離子源，其中所述相對的兩端在高度方向以及寬度方向上延伸，且所述兩個側壁在所述高度方向以及長度方向上延伸，而由所述腔室內的所述磁場以及電場所產生的電磁力在所述高度方向上。 The indirectly heated cathode ion source as described in item 1 of the patent application, wherein the two opposite ends extend in the height direction and the width direction, and the two side walls extend in the height direction and the length direction, The electromagnetic force generated by the magnetic field and electric field in the chamber is in the height direction.

一種間接加熱式陰極離子源，包括：腔室，包括相對的兩端以及連接所述相對的兩端的兩個側壁；陰極，設置在所述腔室的所述相對的兩端的其中一端上；細絲，設置在所述陰極後面；第一電極，設置在所述腔室內且設置在所述腔室的所述兩個側壁中的第一個上；以及第二電極，設置在所述腔室內且設置在所述腔室的所述兩個側壁中的第二個上；其中對所述第一電極施加電壓以使所述第一電極相對於所述腔室被施加電偏壓，且所述陰極電連接到所述腔室。 An indirectly heated cathode ion source includes: a chamber including two opposite ends and two side walls connecting the opposite ends; a cathode arranged on one of the opposite ends of the chamber; a wire disposed behind the cathode; a first electrode disposed in the chamber and on the first of the two side walls of the chamber; and a second electrode disposed in the chamber and is disposed on the second of the two side walls of the chamber; wherein a voltage is applied to the first electrode such that the first electrode is electrically biased relative to the chamber, and the The cathode is electrically connected to the chamber.

如申請專利範圍第7項所述的間接加熱式陰極離子源，其中所述第二電極相對於所述腔室被施加電偏壓。 The indirectly heated cathode ion source as described in claim 7, wherein the second electrode is electrically biased relative to the chamber.

如申請專利範圍第8項所述的間接加熱式陰極離子源，其中所述第一電極與所述第二電極被共用電源施加偏壓。 For the indirectly heated cathode ion source described in claim 8, the first electrode and the second electrode are biased by a common power supply.

如申請專利範圍第8項所述的間接加熱式陰極離子源，其中所述第一電極與所述第二電極被兩個電源施加偏壓。 For the indirectly heated cathode ion source described in claim 8, the first electrode and the second electrode are biased by two power supplies.

如申請專利範圍第7項所述的間接加熱式陰極離子源，其中斥拒極設置在所述腔室的所述相對的兩端的第二個上。 The indirectly heated cathode ion source as described in item 7 of the patent application, wherein the repellent electrode is disposed on the second of the two opposite ends of the chamber.

如申請專利範圍第11項所述的間接加熱式陰極離子源，其中所述斥拒極電連接至所述腔室。 As described in claim 11 of the patent application, the indirectly heated cathode ion source is characterized in that the repellent electrode is electrically connected to the chamber.

如申請專利範圍第7項所述的間接加熱式陰極離子源，其中斥拒極未設置在所述腔室中。 For the indirectly heated cathode ion source described in item 7 of the patent application, the repellent electrode is not disposed in the chamber.

一種間接加熱式陰極離子源，包括：腔室，包括相對的兩端以及兩個側壁，所述兩個側壁連接所述相對的兩端；陰極，設置在所述腔室的所述相對的兩端的其中一端上且電連接至所述腔室；細絲，設置在所述陰極後面；磁場，在Y方向上穿過所述腔室，其中所述Y方向為從所述相對的兩端中的其中一個到所述相對的兩端中的另一個的方向；以及第一電極，設置在所述腔室內且設置在所述腔室的所述兩個側壁中的第一個上；其中對所述第一電極施加電壓以使所述第一電極相對於所述腔室被施加電偏壓以在所述兩個側壁之間產生電場，且所述電場處於X方向上，且在Z方向上產生電磁力，所述Z方向垂直於所述X方向及所述Y方向。 An indirectly heated cathode ion source includes: a chamber including two opposite ends and two side walls, the two side walls connecting the two opposite ends; a cathode disposed on the opposite two sides of the chamber One end of the end is electrically connected to the chamber; a filament is disposed behind the cathode; a magnetic field passes through the chamber in the Y direction, where the Y direction is from the two opposite ends. The direction from one of the two opposite ends to the other of the two opposite ends; and a first electrode disposed in the chamber and disposed on the first of the two side walls of the chamber; wherein The first electrode applies a voltage such that the first electrode is electrically biased relative to the chamber to generate an electric field between the two side walls, and the electric field is in the X direction and in the Z direction Electromagnetic force is generated on, and the Z direction is perpendicular to the X direction and the Y direction.

如申請專利範圍第14項所述的間接加熱式陰極離子源，其中斥拒極設置在所述腔室的所述相對的兩端的第二個上。 The indirectly heated cathode ion source as described in claim 14 of the patent application, wherein the repellent electrode is disposed on the second of the two opposite ends of the chamber.

如申請專利範圍第15項所述的間接加熱式陰極離子源，其中所述斥拒極電連接至所述腔室。 For the indirectly heated cathode ion source described in claim 15 of the patent application, the repellent electrode is electrically connected to the chamber.

如申請專利範圍第14項所述的間接加熱式陰極離子源，其中斥拒極未設置在所述腔室中。 For the indirectly heated cathode ion source described in item 14 of the patent application, the repellent electrode is not disposed in the chamber.

如申請專利範圍第14項所述的間接加熱式陰極離子源，還包括第二電極，設置在所述腔室內，且設置在所述腔室的所述兩個側壁中的第二個上。 The indirectly heated cathode ion source as described in item 14 of the patent application further includes a second electrode, which is disposed in the chamber and disposed on the second of the two side walls of the chamber.

如申請專利範圍第18項所述的間接加熱式陰極離子源，其中所述第二電極相對於所述腔室被施加電偏壓。 The indirectly heated cathode ion source as claimed in claim 18, wherein the second electrode is electrically biased relative to the chamber.

如申請專利範圍第19項所述的間接加熱式陰極離子源，其中所述第一電極與所述第二電極被共用電源施加偏壓。 For the indirectly heated cathode ion source described in claim 19, the first electrode and the second electrode are biased by a common power supply.

如申請專利範圍第19項所述的間接加熱式陰極離子源，其中所述第一電極與所述第二電極被兩個電源施加偏壓。 For the indirectly heated cathode ion source described in claim 19, the first electrode and the second electrode are biased by two power supplies.