CN101958246B - Extend the method for photoresist Acceptable life - Google Patents
Extend the method for photoresist Acceptable life Download PDFInfo
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- CN101958246B CN101958246B CN201010229380.8A CN201010229380A CN101958246B CN 101958246 B CN101958246 B CN 101958246B CN 201010229380 A CN201010229380 A CN 201010229380A CN 101958246 B CN101958246 B CN 101958246B
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- photoresist
- silicon dioxide
- low temperature
- deposition silicon
- acceptable life
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Abstract
The present invention proposes a kind of method extending photoresist Acceptable life, comprises the following steps: to provide semi-conductive substrate; Be coated with bottom antireflective coating on the semiconductor substrate; Described bottom antireflective coating is coated with photoresist; Utilize low temperature deposition silicon dioxide technology, after completing the coating of described photoresist, at its outer surface deposition silicon dioxide film.When needs use said structure, first use wet etching to remove the silica membrane on said structure surface, then carry out photoetching, etching operation.The method of the prolongation photoresist Acceptable life that the present invention proposes, be characterized in utilizing low temperature deposition silicon dioxide (LTO) technology, after completing photoresist coating, at its outer surface deposition film silicon dioxide to guarantee that material is not subject to the impact of external environment condition.
Description
Technical field
The present invention relates to field of IC technique, particularly a kind of method extending photoresist Acceptable life.
Background technology
Photoetching technique is with the continuous progress of integrated circuit fabrication process, constantly reducing of live width, the area of semiconductor device is just becoming more and more less, and the layout of semiconductor, from common simple function discrete device, develops into the integrated circuit integrating high-density multifunction; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (very lagre scale integrated circuit (VLSIC)), until the ULSI of today (ultra large scale integrated circuit), the area of device reduces further, and function is more comprehensively powerful.Consider the complexity of technique research and development, the restriction of chronicity and high cost etc. unfavorable factor, on the basis of prior art level, how to improve the integration density of device further, reduce the area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thus raising overall interests, more and more will be subject to chip designer, the attention of manufacturer.
Along with the intensification of technological cooperation, become the common modality for co-operation of one of semiconductor industry across enterprise, transnational cooperation and multizone cooperation.This wherein just comprises the situation of mutual assist, technique between Semiconductor enterprises.After completing coating technique in a semiconductor production factory wherein, another factory of family is delivered in silicon chip packing to carry out exposing, develop and even etching, this situation often occurs.But due to constantly striding forward of technology, photoresist is also more and more harsher to the requirement of environment, after the gluing of 3-5 in the past, useful life is shortened to several hours, and this is just for this modality for co-operation is provided with obstacle.
Summary of the invention
The present invention proposes a kind of method extending photoresist Acceptable life, be characterized in utilizing low temperature deposition silicon dioxide (LTO) technology, after completing photoresist coating, at its outer surface deposition film silicon dioxide to guarantee that material is not subject to the impact of external environment condition.
In order to achieve the above object, the present invention proposes a kind of method extending photoresist Acceptable life, comprises the following steps:
Semi-conductive substrate is provided;
Be coated with bottom antireflective coating on the semiconductor substrate;
Described bottom antireflective coating is coated with photoresist;
Utilize low temperature deposition silicon dioxide technology, after completing the coating of described photoresist, at its outer surface deposition silicon dioxide film.
Further, when needs use said structure, first use wet etching to remove the silica membrane on said structure surface, then carry out photoetching, etching operation.
Further, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 ~ 200 degree.
Further, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 degree.
Further, the silica-film thickness of described low temperature deposition silicon dioxide technology institute deposit is 1 nanometer ~ 1000 nanometer.
Further, the silica-film thickness of described low temperature deposition silicon dioxide technology institute deposit is 5 nanometers.
Further, described wet etching is removed described silica membrane and is adopted hydrofluoric acid, oxide etching buffer solution or ammoniacal liquor.
The method of the prolongation photoresist Acceptable life that the present invention proposes, be characterized in utilizing low temperature deposition silicon dioxide (LTO) technology, after completing photoresist coating, at its outer surface deposition film silicon dioxide to guarantee that material is not subject to the impact of external environment condition.When deployed, first use wet method removal surface silica dioxide, then photoetching, etched features.Entered experimental verification, the life-span of photoresist can be extended to 1-2 days by original several hours by this mode, and made to be carried out across factory, trans-regional cooperation.
Accompanying drawing explanation
Figure 1 shows that the schematic diagram being coated with bottom antireflective coating and photoresist on substrate.
Figure 2 shows that the schematic diagram of low temperature deposition silicon dioxide.
Figure 3 shows that wet etching removes silica membrane, then carry out the schematic diagram of photoetching, etching operation.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
Please refer to Fig. 1 and Fig. 2, Figure 1 shows that the schematic diagram being coated with bottom antireflective coating and photoresist on substrate, Figure 2 shows that the schematic diagram of low temperature deposition silicon dioxide.The present invention proposes a kind of method extending photoresist Acceptable life, comprises the following steps:
Semi-conductive substrate 100 is provided;
Described Semiconductor substrate 100 is coated with bottom antireflective coating 200;
Described bottom antireflective coating 200 is coated with photoresist 300;
Utilize low temperature deposition silicon dioxide technology, after completing the coating of described photoresist 300, at its outer surface deposition silicon dioxide film 400.
Further, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 ~ 200 degree, and the silica-film thickness of described low temperature deposition silicon dioxide technology institute deposit is 1 nanometer ~ 1000 nanometer.
According to present pre-ferred embodiments, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 degree, and silica membrane 400 thickness of described low temperature deposition silicon dioxide technology institute deposit is 5 nanometers.
Please refer to Fig. 3 again, Figure 3 shows that wet etching removes silica membrane, then carry out the schematic diagram of photoetching, etching operation.When needs use said structure, first use wet etching to remove the silica membrane 400 on said structure surface, then carry out photoetching, etching operation.
Further, described wet etching is removed described silica membrane and is adopted hydrofluoric acid, oxide etching buffer solution or ammoniacal liquor.
According to present pre-ferred embodiments, the present invention adopts hydrofluoric acid wet etching to remove described silica membrane 400.
In sum, the method of the prolongation photoresist Acceptable life that the present invention proposes, be characterized in utilizing low temperature deposition silicon dioxide (LTO) technology, after completing photoresist coating, at its outer surface deposition film silicon dioxide to guarantee that material is not subject to the impact of external environment condition.When deployed, first use wet method removal surface silica dioxide, then photoetching, etched features.Entered experimental verification, the life-span of photoresist can be extended to 1-2 days by original several hours by this mode, and made to be carried out across factory, trans-regional cooperation.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (6)
1. extend a method for photoresist Acceptable life, it is characterized in that, comprise the following steps:
Semi-conductive substrate is provided;
Be coated with bottom antireflective coating on the semiconductor substrate;
Described bottom antireflective coating is coated with photoresist;
Utilize low temperature deposition silicon dioxide technology, after completing the coating of described photoresist, at its outer surface deposition silicon dioxide film;
Wherein, when needing to carry out photoetching and etching to the photoresist structure of above-mentioned deposition silicon dioxide film, first using wet etching to remove the silica membrane on said structure surface, then carrying out photoetching, etching operation.
2. the method for prolongation photoresist Acceptable life according to claim 1, is characterized in that, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 ~ 200 degree.
3. the method for prolongation photoresist Acceptable life according to claim 2, is characterized in that, the deposition temperature of described low temperature deposition silicon dioxide technology is 100 degree.
4. the method for prolongation photoresist Acceptable life according to claim 1, is characterized in that, the silica-film thickness of described low temperature deposition silicon dioxide technology institute deposit is 1 nanometer ~ 1000 nanometer.
5. the method for prolongation photoresist Acceptable life according to claim 4, is characterized in that, the silica-film thickness of described low temperature deposition silicon dioxide technology institute deposit is 5 nanometers.
6. the method for prolongation photoresist Acceptable life according to claim 1, is characterized in that, described wet etching is removed described silica membrane and adopted hydrofluoric acid, oxide etching buffer solution or ammoniacal liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010229380.8A CN101958246B (en) | 2010-07-16 | 2010-07-16 | Extend the method for photoresist Acceptable life |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010229380.8A CN101958246B (en) | 2010-07-16 | 2010-07-16 | Extend the method for photoresist Acceptable life |
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| Publication Number | Publication Date |
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| CN101958246A CN101958246A (en) | 2011-01-26 |
| CN101958246B true CN101958246B (en) | 2015-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010229380.8A Expired - Fee Related CN101958246B (en) | 2010-07-16 | 2010-07-16 | Extend the method for photoresist Acceptable life |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59193446A (en) * | 1983-04-18 | 1984-11-02 | Toyo Ink Mfg Co Ltd | Photosensitive laminate |
| US6242344B1 (en) * | 2000-02-07 | 2001-06-05 | Institute Of Microelectronics | Tri-layer resist method for dual damascene process |
| CN101202244A (en) * | 2006-12-15 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist graphical in forming process of dual embedded structure |
| CN101364537A (en) * | 2007-08-09 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for grid and semiconductor device, construction for manufacturing grid |
-
2010
- 2010-07-16 CN CN201010229380.8A patent/CN101958246B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59193446A (en) * | 1983-04-18 | 1984-11-02 | Toyo Ink Mfg Co Ltd | Photosensitive laminate |
| US6242344B1 (en) * | 2000-02-07 | 2001-06-05 | Institute Of Microelectronics | Tri-layer resist method for dual damascene process |
| CN101202244A (en) * | 2006-12-15 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist graphical in forming process of dual embedded structure |
| CN101364537A (en) * | 2007-08-09 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for grid and semiconductor device, construction for manufacturing grid |
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| CN101958246A (en) | 2011-01-26 |
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