CN101943855B

CN101943855B - Phase shift mask plate structure and manufacture method thereof

Info

Publication number: CN101943855B
Application number: CN201010250531.8A
Authority: CN
Inventors: 朱骏
Original assignee: Shanghai Integrated Circuit Research and Development Center Co Ltd
Current assignee: Shanghai IC R&D Center Co Ltd
Priority date: 2010-08-11
Filing date: 2010-08-11
Publication date: 2016-01-06
Anticipated expiration: 2030-08-11
Also published as: CN101943855A

Abstract

The present invention proposes a kind of phase shift mask plate structure and manufacture method thereof, and this phase shift mask plate structure comprises: mask plate substrate; Phase shift extinction layer, is arranged on described mask plate substrate; Selective epitaxial precipitation diaphragm, be arranged in described phase shift extinction layer, wherein said selective epitaxial precipitation diaphragm is silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.The phase shift mask plate structure that the present invention proposes and manufacture method thereof, eliminate the crome metal that conventional mask plate uses, reduce manufacturing cost and rely on selective epitaxial precipitation technology, with material substituted metal chromium phase shifting layer to high wet method etching selection ratio, reduce the damage that the operation of secondary dry etch process produces mask plate, improve mask plate performance and yield rate.

Description

Phase shift mask plate structure and manufacture method thereof

Technical field

The present invention relates to field of IC technique, particularly a kind of phase shift mask plate structure and manufacture method thereof.

Background technology

Photoetching technique is with the continuous progress of integrated circuit fabrication process, constantly reducing of live width, the area of semiconductor devices is just becoming more and more less, and the layout of semiconductor, from common simple function discrete device, develops into the integrated circuit integrating high-density multifunction; By initial IC (integrated circuit) subsequently to LSI (large scale integrated circuit), VLSI (VLSI (very large scale integrated circuit)), until the ULSI of today (ULSI), the area of device reduces further, and function is more comprehensively powerful.Consider the complicacy of technique research and development, the restriction of chronicity and high cost etc. unfavorable factor, on the basis of prior art level, how to improve the integration density of device further, reduce the area of chip, as much as possiblely on same piece of silicon chip obtain effective chip-count, thus raising overall interests, more and more will be subject to chip designer, the attention of manufacturer.Wherein photoetching process is just responsible for crucial effect, and for photoetching technique, namely lithographic equipment, technique and mask plate technology are the most important things wherein.

For mask plate, Phase-Shift Masking Technique improves one of the most practical technology of photoetching resolution, the principle of this technology is by the phase place of adjacent area being carried out 180 ° of reversions, interference effect is cancelled each other, and then offsets the negative effect causing the photoetching quality in adjacent feature region on domain to be subject to the impact of optical approach effect increasing because live width constantly reduces.The key point of this technology is that phase shifting layer can control the phase place of mask plate figure accurately, due in the fabrication process, phase shifting layer can stand the multiple damages such as etching, cleaning, and along with the progress of technology, live width is less, also improves constantly the requirement of mask plate defect, for ensureing that mask plate cleans, need to carry out cleaning before and after dispatching from the factory and in production run, but too much process can reduce mask plate quality, thus also reduce product quality and qualification rate performance.

Summary of the invention

The present invention proposes a kind of phase shift mask plate structure and manufacture method thereof, reduces manufacturing cost and improves mask plate performance and yield rate.

In order to achieve the above object, the present invention proposes a kind of phase shift mask plate structure, comprising:

Mask plate substrate;

Phase shift extinction layer, is arranged on described mask plate substrate;

Selective epitaxial precipitation diaphragm, is arranged in described phase shift extinction layer.

Further, described selective epitaxial precipitation diaphragm is silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.

Further, the thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.

In order to achieve the above object, the present invention also proposes a kind of phase shift mask board fabrication method, comprises the following steps:

One mask plate substrate is provided, it is formed with phase shift extinction layer, and be coated with the first photoresist in described phase shift extinction layer;

Photoetching is carried out to described first photoresist, forms graph area, then etched features district is carried out to described phase shift extinction layer, until expose described mask plate substrate, thus complete figure Shape definition, remove the first photoresist afterwards;

Utilize selective epitaxial growth process, form selective epitaxial precipitation diaphragm in described phase shift extinction layer outside;

Said structure is coated with the second photoresist, and carries out photoetching, thus definition selective epitaxial precipitation diaphragm remove region, all the other regions protected by the second photoresist;

Wet etching removes and is exposed to outer selective epitaxial precipitation diaphragm, removes the second photoresist, and cleans, thus complete the manufacture of phase shift mask plate.

The phase shift mask plate structure that the present invention proposes and manufacture method thereof, eliminate the crome metal that conventional mask plate uses, reduce manufacturing cost and rely on selective epitaxial precipitation technology, with material substituted metal chromium phase shifting layer (MoSi) to high wet method etching selection ratio, reduce the damage that the operation of secondary dry etch process produces mask plate, improve mask plate performance and yield rate.

Accompanying drawing explanation

Figure 1 shows that the phase shift mask plate structure schematic diagram of present pre-ferred embodiments.

The phase shift mask board fabrication method structural representation of Fig. 2 ~ Figure 6 shows that present pre-ferred embodiments.

Embodiment

In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.

Please refer to Fig. 1, Figure 1 shows that the phase shift mask plate structure schematic diagram of present pre-ferred embodiments.The present invention proposes a kind of phase shift mask plate structure, comprising: mask plate substrate 10; Phase shift extinction layer 20, is arranged on described mask plate substrate 10; Selective epitaxial precipitation diaphragm 30, is arranged in described phase shift extinction layer 20, and wherein said selective epitaxial precipitation diaphragm 30 is silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride.

Further, the thickness of described selective epitaxial precipitation diaphragm 30 is 10 dusts to 500 micron.

Please refer to Fig. 2 ~ Fig. 6 again, the phase shift mask board fabrication method structural representation of Fig. 2 ~ Figure 6 shows that present pre-ferred embodiments.The present invention also proposes a kind of phase shift mask board fabrication method, comprises the following steps:

With reference to figure 2, a mask plate substrate 1 is provided, it is formed with phase shift extinction layer 2, and be coated with the first photoresist 5 in described phase shift extinction layer 2;

With reference to figure 3, photoetching is carried out to described first photoresist 5, form graph area, then etched features district is carried out to described phase shift extinction layer 2, until expose described mask plate substrate 1, thus complete figure Shape definition, remove the first photoresist 5 afterwards;

With reference to figure 4, utilize selective epitaxial growth process, form selective epitaxial precipitation diaphragm 3 in described phase shift extinction layer 2 outside;

With reference to figure 5, said structure is coated with the second photoresist 6, and carries out photoetching, thus definition selective epitaxial precipitation diaphragm 3 remove region, all the other regions protected by the second photoresist 6;

With reference to figure 6, wet etching removes and is exposed to outer selective epitaxial precipitation diaphragm 3, removes the second photoresist 6, and cleans, thus complete the manufacture of phase shift mask plate.

Further, described selective epitaxial precipitation diaphragm 3 is silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride, and the thickness of wherein said selective epitaxial precipitation diaphragm 3 is 10 dusts to 500 micron.

In sum, the phase shift mask plate structure that the present invention proposes and manufacture method thereof, eliminate the crome metal that conventional mask plate uses, reduce manufacturing cost and rely on selective epitaxial precipitation technology, with material substituted metal chromium phase shifting layer (MoSi) to high wet method etching selection ratio, reduce the damage that the operation of secondary dry etch process produces mask plate, improve mask plate performance and yield rate.

Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.

Claims

1. a phase shift mask board fabrication method, is characterized in that, comprises the following steps:

Wet etching removes and is exposed to outer selective epitaxial precipitation diaphragm, removes the second photoresist, and cleans, thus complete the manufacture of phase shift mask plate;

Wherein, described selective epitaxial precipitation diaphragm is silicon dioxide, polysilicon, silit, silicon oxynitride, silicon oxide carbide, or silicon nitride; The thickness of described selective epitaxial precipitation diaphragm is 10 dusts to 500 micron.

2. utilize a phase shift mask plate prepared by the method described in claim 1, it is characterized in that, comprising:

Mask plate substrate;

Phase shift extinction layer, is arranged on described mask plate substrate;

Selective epitaxial precipitation diaphragm, is only arranged on described phase shift extinction layer;