CN101937949B - Method for improving conversion efficiency of amorphous silicon solar cell - Google Patents
Method for improving conversion efficiency of amorphous silicon solar cell Download PDFInfo
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- CN101937949B CN101937949B CN2010102379917A CN201010237991A CN101937949B CN 101937949 B CN101937949 B CN 101937949B CN 2010102379917 A CN2010102379917 A CN 2010102379917A CN 201010237991 A CN201010237991 A CN 201010237991A CN 101937949 B CN101937949 B CN 101937949B
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 title abstract description 3
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 239000012528 membrane Substances 0.000 claims description 34
- 238000002360 preparation method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 11
- 230000010307 cell transformation Effects 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract 10
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for improving the conversion efficiency of an amorphous silicon solar cell, and solves the technical problems of current loss and voltage loss of the amorphous silicon solar cell caused by a reverse PN junction formed between a weak N-type conductive thin film and a P-type amorphous silicon thin film. The adopted technical scheme is that: the method is implemented in a process for preparing the amorphous silicon solar cell, wherein the process comprises steps of preparing a matrix of the solar cell, the weak N-type conductive thin film, a PIN-type amorphous silicon thin film and a back electrode; and in the conventional process for the amorphous silicon solar cell, a step of preparing an intrinsic buffer layer is added between the steps of preparing the weak N-type conductive thin film and the P-type amorphous silicon thin film after the weak N-type conductive thin film is prepared on the matrix. The key point is that: the intrinsic buffer layer for slowing down the current loss and the voltage loss of the amorphous silicon solar cell caused by the reverse PN junction formed between the weak N-type conductive thin film and the P-type amorphous silicon thin film is prepared on the weak N-type conductive thin film, so that the width of a depletion layer is reduced, and the voltage loss and the current loss caused by the reverse PN junction are reduced.
Description
Technical field
The present invention relates to a kind of method that improves the non-crystal silicon solar cell transformation efficiency, belong to the semiconductor application field, particularly, improve the non-crystal silicon solar cell transformation efficiency by adopting the method for between TCO and PIN type amorphous silicon membrane, setting up resilient coating.
Background technology
The demand of world energy sources makes solar battery technology obtain swift and violent development, the technology of the ripe main flow of existing market is based on monocrystalline silicon and polycrystalline silicon solar cell, but because the environmental problem that exists in the cost limit that the shortage of silicon materials causes and the production crystalline silicon process, advantages such as amorphous silicon film solar battery has that consumptive material is few, environmental friendliness, cost decline space are bigger, research and production unit one after another with non-crystal silicon solar cell as research and development principal direction.The structure of non-crystal silicon solar cell is based on the p-i-n type, and the structure sheaf of this non-crystal silicon solar cell comprises matrix, conductive film, PIN type amorphous silicon membrane and the back electrode etc. that prepare solar cell.The subject matter of non-crystal silicon solar cell existence at present is how to improve transformation efficiency and reduce photic attenuating effect.In the prior art, processing technology of interface to P type amorphous silicon membrane and I type amorphous silicon membrane is a lot, for the interface between conductive film and the P type amorphous silicon membrane, because conductive film presents weak N type, form reverse PN junction with P type amorphous silicon membrane, cause electric current, the loss of voltage of solar cell, how to have addressed this problem a difficult problem into this area.
Summary of the invention
The present invention for solving non-crystal silicon solar cell since weak N type conductive film and P type amorphous silicon membrane form reverse PN junction, cause the technical problem of the electric current and the loss of voltage, designed a kind of method that improves the non-crystal silicon solar cell transformation efficiency, generate the resilient coating of the reverse PN junction that slows down weak N type conductive film and the formation of P type amorphous silicon membrane by deposition on weak N type conductive film, improved the amorphous silicon solar cell transformation efficiency, reduce photic attenuating effect, energy savings.
The present invention for realizing the technical scheme that goal of the invention adopts is, a kind of method that improves the non-crystal silicon solar cell transformation efficiency, above method realizes in preparation amorphous silicon solar cell technology, said technology comprises the matrix for preparing solar cell, the weak N type conductive film of preparation, preparation PIN type amorphous silicon membrane and preparation back electrode, in the non-crystal silicon solar cell common process, after weak N type conductive film is finished in preparation on the matrix, increased the operation of the Intrinsical resilient coating between weak N type conductive film of preparation and the P type amorphous silicon membrane, specifically may further comprise the steps:
A, behind the weak N type conductive film of preparation on the matrix, the control substrate temperature is 160～220 ℃ and sends into chemical vapor deposition chamber that the vacuum degree of adjusting deposition chamber is 5 * 10
-5～1 * 10
-4Pa;
B, at ambient temperature, in mixing chamber with CO
2, H
2, SiH
4By charging into deposition chamber after the following percent by volume mixing:
CO
2Content is 2～4%, H
2Content is 90～93%, SiH
4Content 5～8%;
C, control deposition chamber deposition pressure are 90～140pa, and depositing temperature is that 160 ℃～250 ℃, radio frequency power density are 0.2W/cm
2～0.5W/cm
2
D, in above deposition atmosphere, deposit 10S～30S after, on weak N type conductive film, deposit the Intrinsical resilient coating;
E, the Intrinsical resilient coating form the back continue to finish later process according to the non-crystal silicon solar cell common process.
Key of the present invention is, preparation is used to slow down weak N type conductive film and P type amorphous silicon membrane forms reverse PN junction, causes the resilient coating of non-crystal silicon solar cell electric current, the loss of voltage on weak N type conductive film.Resilient coating is the very low intrinsic semiconductor layer of doping content, intrinsic semiconductor has enlarged the depletion width of the reverse PN junction of weak N type conductive film and the formation of P type amorphous silicon membrane, thereby voltage, current loss that reverse PN junction causes have been reduced, improve the transformation efficiency of amorphous silicon solar cell, reduced photic attenuating effect.
The present invention is described in detail below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the structure sheaf schematic diagram of amorphous silicon solar cell among the present invention.
In the accompanying drawing, 1 represents matrix, the weak N type conductive film of 2 representatives, and 3 represent resilient coating, and 4 represent PIN type amorphous silicon membrane, and 5 represent back electrode.
Embodiment
Referring to Fig. 1, a kind of method that improves the non-crystal silicon solar cell transformation efficiency, above method realizes in preparation amorphous silicon solar cell technology, said technology comprises the weak N type conductive film 2 of matrix 1, preparation, preparation PIN type amorphous silicon membrane 4 and the preparation back electrode 5 for preparing solar cell, in the non-crystal silicon solar cell common process, after weak N type conductive film 2 is finished in preparation on the matrix 1, increased the operation of the Intrinsical resilient coating 3 between weak N type conductive film 2 of preparation and the P type amorphous silicon membrane, specifically may further comprise the steps:
A, behind the weak N type conductive film 2 of preparation on the matrix 1, control matrix 1 temperature is 160～220 ℃ and sends into chemical vapor deposition chamber that the vacuum degree of adjusting deposition chamber is 5 * 10
-5～1 * 10
-4Pa;
B, at ambient temperature, in mixing chamber with CO
2, H
2, SiH
4By charging into deposition chamber after the following percent by volume mixing:
CO
2Content is 2～4%, H
2Content is 90～93%, SiH
4Content 5～8%;
C, control deposition chamber deposition pressure are 90～140pa, and depositing temperature is that 160 ℃～250 ℃, radio frequency power density are 0.2W/cm
2～0.5W/cm
2
D, in above deposition atmosphere, deposit 10S～30S after, on weak N type conductive film 2, deposit Intrinsical resilient coating 3;
E, form the back at Intrinsical resilient coating 3 and continue to finish later process according to the non-crystal silicon solar cell common process.
Among the above-mentioned step D, the thicknesses of layers that Intrinsical resilient coating 3 forms is 20～
CO by control preparation Intrinsical resilient coating 3 usefulness
2, SiH
4, H
2The volume percent content of gas can obtain 2.8～3.5 high band gap, and the backward current that increase Intrinsical resilient coating 3 can reduce between weak N type conductive film 2 and the P type amorphous silicon membrane greatly makes the conversion efficiency of battery obtain 0.2～0.5% raising.
Difference according to preparation Intrinsical resilient coating 3 thicknesses of layers feeds CO
2Asynchronism(-nization).
The present invention is owing to increase the Intrinsical resilient coating 3 of high band gap between weak N type conductive film 2 and P type amorphous silicon membrane, efficiently solve the reverse PN junction problem between weak N type conductive film 2 and the P type amorphous silicon membrane, make the generating efficiency of solar cell obtain 0.2～0.5% lifting; Simultaneously because the Intrinsical resilient coating 3 band gap height that increase, just can not exert an influence to the light absorption of amorphous silicon solar cell; Its preparation technology is also fairly simple.
A specific embodiment of the present invention before deposition P type amorphous silicon membrane, at first prepares Intrinsical resilient coating 3 on weak N type conductive film 2, general power supply stimulating frequency adopts 13.56MHz.With the tin ash electro-conductive glass is matrix, earlier glass basis is preheating to 180 ℃, sends into plasma reinforced chemical vapor deposition system, earlier preparation Intrinsical resilient coating 3.Settling chamber's vacuum is evacuated to vacuum degree 8 * 10
-5Pa, depositing temperature are controlled at 200 ℃, with CO
2, H
2, SiH
4After following volume percent content mixing, charge into the settling chamber: CO
2Content is 2%, H
2Content is 91%, SiH
4Content is 7%; Bleeding regulating rate controlled deposition pressure is 120Pa, and radio-frequency power adopts 0.4W/cm
2In above deposition atmosphere, by the time of control feeding mist, behind the deposition 20S, just deposit Intrinsical resilient coating 3 on weak N type conductive film surface, its thickness exists
About; At last, on Intrinsical resilient coating 3, prepare PIN type amorphous silicon membrane according to common process.
The operation principle of solar cell is based on the photovoltaic effect of PN junction, and referring to Fig. 1, the weak N type conductive film 2 in the solar cell is as the output cathode of battery, and back electrode 5 is as the output negative pole of battery, and P, I, N type amorphous silicon membrane 4 are as the photogenic voltage layer.When absorbing solar energy, battery produces electron hole pair, under the effect of battery internal electric field, light induced electron and hole are separated, the hole flows into P type amorphous silicon membrane, electronics flows into N type amorphous silicon membrane, the result makes N type amorphous silicon membrane store superfluous electronics, and P type amorphous silicon membrane has superfluous hole, thus near P type amorphous silicon membrane and PN junction that N type amorphous silicon membrane forms the formation photoproduction electric field opposite with internal electric field.The photoproduction electric field also makes P type amorphous silicon membrane positively charged, N type amorphous silicon membrane electronegative except part is supported the effect of internal electric field, and the thin layer between N district and P district just produces electromotive force, Here it is photovoltaic effect.At this moment, if with the external circuit short circuit, then just have the photoelectric current that is directly proportional with the incident light energy to flow through in the external circuit, this electric current is called short circuit current, on the other hand, if opened a way in the PN junction two ends, then, make the Fermi level height of the Fermi level in N district, between these two Fermi levels, just produced potential difference VOC than the P district because electronics and hole flow into N district and P district respectively, can record this value, and be called open circuit voltage.
In like manner, between weak N type conductive film 2 and P type amorphous silicon membrane, also exist the photoproduction effect, but because the direction of the PN junction that they form is opposite with the PN junction direction that PIN type amorphous silicon membrane 4 forms, can cause the electric energy of solar cell to run off, cause the wasting of resources, by between weak N type conductive film 2 and P type amorphous silicon membrane, setting up the very low Intrinsical semiconductor layer of doping content, increased the width of the depletion region of reverse PN junction, reduced the energy loss of solar cell.
Claims (2)
1. method that improves the non-crystal silicon solar cell transformation efficiency, above method realizes in preparation amorphous silicon solar cell technology, said technology comprises the matrix (1) for preparing solar cell, the weak N type transparent conductive film (2) of preparation, preparation PIN type amorphous silicon membrane (4) and preparation back electrode (5), it is characterized in that: in the non-crystal silicon solar cell common process, after weak N type transparent conductive film (2) is finished in the last preparation of matrix (1), increased the operation of the Intrinsical resilient coating (3) between weak N type transparent conductive film (2) of preparation and the P type amorphous silicon membrane, specifically may further comprise the steps:
A, after matrix (1) is gone up the weak N type conductive film (2) of preparation, control matrix (1) temperature is 160～220 ℃ and sends into chemical vapor deposition chamber that the scope of adjusting the body vacuum degree of deposition chamber is 5 * 10
-5～1 * 10
-4Pa;
B, at ambient temperature, in mixing chamber with CO
2, H
2, SiH
4By charging into deposition chamber after the following percent by volume mixing:
CO
2Content is 2～4%, H
2Content is 90～93%, SiH
4Content 5～8%;
C, control deposition chamber deposition pressure are 90～140Pa, and depositing temperature is that 160～250 ℃, radio frequency power density are 0.2W/cm
2～0.5W/cm
2
D, in above deposition atmosphere, deposit 10～30s after, on weak N type conductive film (2), deposit Intrinsical resilient coating (3);
E, form the back at Intrinsical resilient coating (3) and continue to finish later process according to the non-crystal silicon solar cell common process.
2. a kind of method that improves the non-crystal silicon solar cell transformation efficiency according to claim 1 is characterized in that: among the described step D, the thicknesses of layers that Intrinsical resilient coating (3) forms is 20～
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2624359B2 (en) * | 1990-08-28 | 1997-06-25 | キヤノン株式会社 | Solar cell |
| CN101379622A (en) * | 2006-01-30 | 2009-03-04 | 本田技研工业株式会社 | Solar cell and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3342257B2 (en) * | 1995-10-03 | 2002-11-05 | 三洋電機株式会社 | Photovoltaic element |
| KR100833517B1 (en) * | 2006-12-05 | 2008-05-29 | 한국전자통신연구원 | Optoconductive compound and method of producing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2624359B2 (en) * | 1990-08-28 | 1997-06-25 | キヤノン株式会社 | Solar cell |
| CN101379622A (en) * | 2006-01-30 | 2009-03-04 | 本田技研工业株式会社 | Solar cell and its manufacturing method |
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