CN102332504A - Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell - Google Patents
Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell Download PDFInfo
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- CN102332504A CN102332504A CN201110091913A CN201110091913A CN102332504A CN 102332504 A CN102332504 A CN 102332504A CN 201110091913 A CN201110091913 A CN 201110091913A CN 201110091913 A CN201110091913 A CN 201110091913A CN 102332504 A CN102332504 A CN 102332504A
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- solar cell
- silicon solar
- sih
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Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 51
- 230000008021 deposition Effects 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 20
- 239000002355 dual-layer Substances 0.000 abstract 2
- 238000005562 fading Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 230000010307 cell transformation Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for improving the interface performance of a P-type layer and an I-type layer in an amorphous silicon solar cell, which solves the technical problem that the interface performance of the P-type layer and the I-type layer is reduced because of current loss and voltage loss caused by boron pollution between the P layer and the I layer in a p-i-n photovoltaic layer. The technical scheme is that the method is realized in the process for preparing the photovoltaic absorbing layer of the amorphous silicon solar cell. The process is that a P-type film layer, an I-type window layer and an N-type film layer are sequentially prepared on a transparent conducting substrate. The method is characterized in that a process for preparing a dual-layer buffer film between the P-type film layer and the I-type window layer is increased. By increasing the dual-layer buffer layer between the P-type layer and the I-type window layer, trivalent boron doped in the P-type layer is prevented from polluting the intrinsic I-type layer, the problem of serious electric quantity loss between the P-type layer and the I-type layer is solved, the conversion efficiency of the amorphous silicon solar cell is improved, the photo-induced fading effect is reduced and the energy is saved.
Description
Technical field
The present invention relates to a kind of method that improves P type layer and I type bed boundary performance in the non-crystal silicon solar cell; Belong to the solar cell preparation field; Particularly a kind of mode through between P type layer and I type layer, setting up the double-layer bumper film improves the interface performance between P type layer and the I type layer.
Background technology
The demand of world's new forms of energy makes the solar cell technology obtain swift and violent development.The technology of the ripe main flow of existing market is main with monocrystalline silicon and polycrystalline silicon solar cell, but because the environmental problem that exists in the cost limit that the shortage of silicon materials causes and the production crystalline silicon process has limited the development of solar industry.The exploitation and the progress of amorphous silicon film solar battery have been excited simultaneously.Amorphous silicon film solar battery has advantages such as consumptive material is few, environmental pollution is little, cost decline space is bigger, research and production unit one after another with amorphous silicon solar cell as research and development principal direction,
In the prior art, the structure of non-crystal silicon solar cell is main with the p-i-n type, and the subject matter of amorphous silicon solar cell existence at present is how to improve transformation efficiency and reduce photic decline rate.For the interface between the P/I layer; Because the P layer is doped with triad boron; Directly during deposition intrinsic type I layer, the silicon that forms Intrinsical I layer is easy to receive boron pollution and presents weak N property, between P layer and I layer, forms PN junction on the P layer; Thereby cause electric current, the loss of voltage, how to have addressed this problem key subject into this area.
Summary of the invention
The electric current that boron pollution causes, the loss of voltage reduce the technical problem of P type layer and I type bed boundary performance thereby the object of the invention is to solve in the p-i-n photovoltaic layer between the P layer and I layer; Have to having designed a kind of method that improves P type layer and I type bed boundary conversion performance in the non-crystal silicon solar cell; Between P type layer and I type Window layer through having set up the means of double-layer bumper film; Reduced power loss between P type layer and the I type Window layer; Thereby improved the amorphous silicon solar cell transformation efficiency, reduced the influence of photic attenuating effect, improved the efficient of conversion.
The present invention for realizing the technical scheme that goal of the invention adopts is; The method of P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell; Above method is in the technology of preparation non-crystal silicon solar cell photovoltaic absorbed layer, to realize; Technology is included in the step for preparing P type thin layer, I type Window layer, N type thin layer on the transparent conductive substrate successively; Key is: during the technology of preparation photovoltaic absorbed layer, preparation is accomplished after the P type thin layer step on transparent conductive substrate, has increased the operation of the double-layer bumper film between preparation P type thin layer and the I type Window layer, the concrete steps of above operation comprise:
A, in chemical vapor deposition chamber, behind preparation P type thin layer on the transparent conductive substrate, the control basal plate temperature is that 180～220 ℃, the vacuum degree of deposition chamber are higher than 1 * 10
-5Pa;
B, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H
2Content is 91～93%, SiH
4Content 5～7%, CH
4Content is 2～3%;
C, control deposition chamber deposition pressure are that 50～130pa, depositing temperature are that 180～220 ℃, radio frequency power density are 0.02W/cm
2～0.07W/cm
2
D, in above deposition atmosphere, deposit 30～60s after, on P type film, deposit the ground floor buffer film;
E, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H
2Content is 89～91%, SiH
4Content 7～9%, CH
4Content is 1～2%;
F, keep that the deposition atmosphere is constant, behind deposition 30～60s, on first resilient coating, deposit second layer buffer film;
G, double-layer bumper film form the common process continuation completion later process that the back makes according to non-crystal silicon solar cell photovoltaic absorbed layer.
The present invention is through setting up the double-layer bumper film between P type layer and I type Window layer; Stopped of the pollution of the trivalent boron element of P type layer doping to Intrinsical I layer; Solved the serious problem of power loss between P type layer and the I type Window layer; Thereby improved the amorphous silicon solar cell transformation efficiency, reduced photic attenuating effect, energy savings.
Embodiment
The method of P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell; Above method is in the technology of preparation non-crystal silicon solar cell photovoltaic absorbed layer, to realize; Technology is included in the step for preparing P type thin layer, I type Window layer, N type thin layer on the transparent conductive substrate successively; Its key is: during the technology of preparation photovoltaic absorbed layer, preparation is accomplished after the P type thin layer step on transparent conductive substrate; Increased the operation of the double-layer bumper film between preparation P type thin layer and the I type Window layer, the concrete steps of above operation comprise:
A, in chemical vapor deposition chamber, behind preparation P type thin layer on the transparent conductive substrate, the control basal plate temperature is that 180～220 ℃, the vacuum degree of deposition chamber are higher than 1 * 10
-5Pa;
B, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H 2 content are 91～93%, SiH
4Content 5～7%, CH
4Content is 2～3%;
C, control deposition chamber deposition pressure are that 50～130pa, depositing temperature are that 180～220 ℃, radio frequency power density are 0.02W/cm
2～0.07W/cm
2
D, in above deposition atmosphere, deposit 30～60s after, on P type film, deposit the ground floor buffer film;
E, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H
2Content is 89～91%, SiH
4Content 7～9%, CH
4Content is 1～2%;
F, keep that the deposition atmosphere is constant, behind deposition 30～60s, on first resilient coating, deposit second layer buffer film;
G, double-layer bumper film form the common process continuation completion later process that the back makes according to non-crystal silicon solar cell photovoltaic absorbed layer.
Among the above-mentioned step D, the thickness of ground floor buffer film is
In the above-mentioned step F, the thickness of second layer buffer film is
Before carrying out steps A, the technological parameter of the P type thin layer that on transparent conductive substrate, deposits is: the vacuum degree of control deposition chamber is higher than 1 * 10
-5Pa, depositing temperature are that 180 ℃～200 ℃, deposition pressure are that 100～150pa, power density are 0.2～0.4W/cm
2, feed B (CH
4)
3, SiH
4, CH
4, H
2Gas, hydrogen thinner ratio R (R=H
2/ SiH
4) be 20～33, silane is 10 with the methane flow ratio: (1～1.5).
Above-mentioned transparent conductive substrate is a TCO glass.
When on P type film, depositing the ground floor buffer film required process gas by volume the condition of percentage mix be: H
2Content is 91～93%, SiH
4Content 5～7%, CH
4Content is 2～3%, provides the above mist specific embodiment of each component content of percentage calculation by volume below:
On the ground floor buffer film during deposition second layer buffer film required process gas by volume the condition of percentage mix be: H
2Content is 89～91%, SiH
4Content 7～9%, CH
4Content is 1～2%, provides the above mist specific embodiment of each component content of percentage calculation by volume below:
Key of the present invention is between P type layer and I type Window layer, to set up the double-layer bumper film; Stopped of the pollution of the trivalent boron element of P type layer doping to Intrinsical I layer; Solved the serious problem of power loss between P type layer and the I type Window layer; Thereby improved the amorphous silicon solar cell transformation efficiency, reduced photic attenuating effect, energy savings.
This method provides a most preferred embodiment in the specific implementation.At first on substrate, preparing the P layer film, before deposition I layer, at first on the P layer film, depositing the double-layer bumper film at P/I interface then, the power supply stimulating frequency adopts 40.68MHz, is substrate with the tin ash electro-conductive glass.
At first glass substrate is preheating to 180 ℃, sends into plasma reinforced chemical vapor deposition system, settling chamber's vacuum is evacuated to vacuum degree is higher than 1 * 10
-5Pa, depositing temperature are heated to 200 ℃, and radio-frequency power adopts 0.21W/cm
2
Feed B (CH
4)
3, SiH
4, CH
4, H
2Gas, hydrogen thinner ratio R (R=H
2/ SiH
4) be 25, silane is 10: 1.2 with the methane flow ratio, deposition pressure is 120pa, deposition P layer.
After the deposition P layer, deposition ground floor buffer film: the temperature of adjustment glass substrate is 180 ℃, and the body vacuum degree of control deposition chamber is higher than 1 * 10
-5Pa, radio frequency power density are 0.05W/cm
2, depositing temperature is that 200 ℃, deposition pressure are 50pa; Feed CH then
4, SiH
4, H
2Mist, each gas ratio is: H
2/ (H
2+ SiH
4+ CH
4)=92%, SiH
4/ (H
2+ SiH
4+ CH
4)=6%, CH
4/ (H
2+ SiH
4+ CH
4)=2% behind the deposition 40S, forms the ground floor buffer film.
Deposition second layer buffer film on the ground floor buffer film: the deposition atmosphere of deposition chamber remains unchanged, and feeds CH
4, SiH
4, H
2Mist, each gas ratio is: H
2/ (H
2+ SiH
4+ CH
4)=90%, SiH
4/ (H
2+ SiH
4+ CH
4)=8.5%, CH
4/ (H
2+ SiH
4+ CH
4)=1.5% behind the deposition 50S, forms second layer buffer film, prepares I layer and N layer according to common process then.
The amorphous silicon film solar battery that utilizes this technology to make, efficient has 0.2～0.6% lifting, has effectively solved the interface problem between the P/I.
Claims (4)
1. the method for P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell; Above method is in the technology of preparation non-crystal silicon solar cell photovoltaic absorbed layer, to realize; Technology is included in the step for preparing P type thin layer, I type Window layer, N type thin layer on the transparent conductive substrate successively; It is characterized in that: during the technology of preparation photovoltaic absorbed layer, preparation is accomplished after the P type thin layer step on transparent conductive substrate; Increased the operation of the double-layer bumper film between preparation P type thin layer and the I type Window layer, the concrete steps of above operation comprise:
A, in chemical vapor deposition chamber, behind preparation P type thin layer on the transparent conductive substrate, the control basal plate temperature is that 180～220 ℃, the vacuum degree of deposition chamber are higher than 1 * 10
-5Pa;
B, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H
2Content is 91～93%, SiH
4Content 5～7%, CH
4Content is 2～3%;
C, control deposition chamber deposition pressure are that 50～130pa, depositing temperature are that 180～220 ℃, radio frequency power density are 0.02W/cm
2～0.07W/cm
2
D, in above deposition atmosphere, deposit 30～60s after, on P type film, deposit the ground floor buffer film;
E, at ambient temperature, in mixing chamber with CH
4, SiH
4, H
2By charging into deposition chamber after the following percent by volume mixing:
H
2Content is 89～91%, SiH
4Content 7～9%, CH
4Content is 1～2%;
F, keep that the deposition atmosphere is constant, behind deposition 30～60s, on first resilient coating, deposit second layer buffer film;
G, double-layer bumper film form the common process continuation completion later process that the back makes according to non-crystal silicon solar cell photovoltaic absorbed layer.
2. the method for P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell according to claim 1; It is characterized in that: among the described step D, the thickness of ground floor buffer film is
3. the method for P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell according to claim 1; It is characterized in that: in the described step F, the thickness of second layer buffer film is
4. the method for P type layer and I type bed boundary performance in the raising non-crystal silicon solar cell according to claim 1; It is characterized in that: before carrying out steps A, the technological parameter of the P type thin layer that on transparent conductive substrate, deposits is: the vacuum degree of control deposition chamber is higher than 1 * 10
-5Pa, depositing temperature are that 180 ℃～200 ℃, deposition pressure are that 100～150pa, power density are 0.2～0.4W/cm
2, feed B (CH
4)
3, SiH
4, CH
4, H
2Gas, hydrogen thinner ratio R (R=H
2/ SiH
4) be 20～33, silane is 10 with the methane flow ratio: (1～1.5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100919135A CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100919135A CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102332504A true CN102332504A (en) | 2012-01-25 |
| CN102332504B CN102332504B (en) | 2013-04-10 |
Family
ID=45484215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100919135A Active CN102332504B (en) | 2011-04-13 | 2011-04-13 | Method for improving interface performance of P-type layer and I-type layer in amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102332504B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820382A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院微电子研究所 | Method for preparing p+ doped layer and n+ front surface field |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN106024919A (en) * | 2016-07-28 | 2016-10-12 | 东北大学 | Amorphous silicon thin-film solar cell and manufacturing method thereof |
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| CN1287690A (en) * | 1998-01-22 | 2001-03-14 | 时至准钟表股份有限公司 | Solar cell device and method of producing the same |
| US6261862B1 (en) * | 1998-07-24 | 2001-07-17 | Canon Kabushiki Kaisha | Process for producing photovoltaic element |
| JP3568047B2 (en) * | 1994-04-28 | 2004-09-22 | キヤノン株式会社 | Method of forming photovoltaic element |
| CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
| CN101257052A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Window material for silicon based thin film solar battery and preparing method thereof |
-
2011
- 2011-04-13 CN CN2011100919135A patent/CN102332504B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3568047B2 (en) * | 1994-04-28 | 2004-09-22 | キヤノン株式会社 | Method of forming photovoltaic element |
| CN1287690A (en) * | 1998-01-22 | 2001-03-14 | 时至准钟表股份有限公司 | Solar cell device and method of producing the same |
| US6261862B1 (en) * | 1998-07-24 | 2001-07-17 | Canon Kabushiki Kaisha | Process for producing photovoltaic element |
| CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
| CN101257052A (en) * | 2008-04-07 | 2008-09-03 | 南开大学 | Window material for silicon based thin film solar battery and preparing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820382A (en) * | 2012-09-04 | 2012-12-12 | 中国科学院微电子研究所 | Method for preparing p+ doped layer and n+ front surface field |
| CN102820382B (en) * | 2012-09-04 | 2016-01-20 | 中国科学院微电子研究所 | A kind of method preparing p+ doped layer and n+ front-surface field |
| CN103165722A (en) * | 2013-03-27 | 2013-06-19 | 上海空间电源研究所 | Microcrystalline silicon thin film solar cell |
| CN106024919A (en) * | 2016-07-28 | 2016-10-12 | 东北大学 | Amorphous silicon thin-film solar cell and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102332504B (en) | 2013-04-10 |
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