CN101927976B - Infrared detector with micro-bridge structure and manufacturing method thereof - Google Patents
Infrared detector with micro-bridge structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN101927976B CN101927976B CN 200910153649 CN200910153649A CN101927976B CN 101927976 B CN101927976 B CN 101927976B CN 200910153649 CN200910153649 CN 200910153649 CN 200910153649 A CN200910153649 A CN 200910153649A CN 101927976 B CN101927976 B CN 101927976B
- Authority
- CN
- China
- Prior art keywords
- layer
- micro
- deposited
- copper
- bridge structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to an infrared detector with a micro-bridge structure, which belongs to the technical field of micro-electromechanics, and comprises a silicon substrate as a read-out circuit of the infrared detector; a metal reflecting layer deposited on the silicon substrate; a dielectric layer which is deposited in a groove of the metal reflecting layer and has the height being consistentwith that of the metal reflecting layer; a sacrifice layer and a first release protection layer used as protection of release of the sacrifice layer which are deposited on the dielectric layer and the metal reflecting layer and form through holes by lithography and etching; a copper or tungsten pier which is deposited in the through hole of the sacrifice layer; a metal electrode deposited on the copper or tungsten pier and the first release protection layer; and a sensitive material detecting layer which is deposited on the metal electrode and the first release protection layer. A Cu-column micro-bridge structure is manufactured by using the damascene process, and a flat micro-bridge plane is manufactured by introducing the chemical mechanical polishing process (CMP), thereby being conductive to the follow-up process and improving the performances.
Description
Technical field
The invention belongs to field of micro electromechanical technology, be specifically related to utilize copper wiring technology in Damascus to make the process of infrared detector focal plane array.
Background technology
Micro electronmechanical (MEMS) product has been widely used in the daily life, comprises safe automobile air bag accelerometer, automobile and medical pressure sensor, micro-microphone, inkjet printing magnetic head and the non-Infrared Detectors of non-refrigeration etc.The MEMS product generally comprises MEMS structure and CMOS treatment circuit part.Because MEMS and CMOS processing compatibility are poor, so early stage being difficult to realizes producing on a large scale.Because the market demand of MEMS product enlarges gradually, the concept of CMOS-MEMS is proposed by the people gradually in recent years.CMOS-MEMS utilizes CMOS fabrication techniques periphery to read and signal processing circuit, makes the structure of sensor and micro mechanical system then on cmos circuit, but the compatibility issue of technology is the key of puzzlement CMOS-MEMS technology all the time.On the other hand, the MEMS technique platform is not also realized standardization and industrialization as semicon industry now, most manufacturing platforms are all set up for certain product, be not suitable for product foundry widely, thus the technical experience of using for reference and introduce semicon industry to the manufacturing development of MEMS product with highly beneficial.
Infrared Detectors generally is to adopt integrated MEMS micro-bridge structure on cmos circuit, utilizes sensitive material detecting layer (being generally non-crystalline silicon or oxidation machine) absorption infrared ray and converts it into the signal of telecommunication, realizes the thermal imaging function accordingly.The main developing direction of current Infrared Detectors is improved the image resolution ratio of detector for reducing the pixel physical dimension and increasing array sizes, enlarges the range of application of Infrared Detectors, and the level of its MEMS manufacturing process has become the principal element of restriction properties of product.The micro-bridge structure of Infrared Detectors narrows down to now 17*17 micron pixel structure from early stage 100*100 micron, for example " 17 microns focal plane Infrared Detectors of BAE company " (SPIE (SPIE) infrared technique in 2009 and and use discussion, SPIE volume 7298,72980P-1～72980P-6 page or leaf, Richard Blackwell. etc., " 17um Microbolometer FPA Technology at BAESystems; " Proceedings of SPIE conference on infrared technology andapplications XXXV, 2009.SPIE Vol.7298, pp.1-6).The stress that little pixel structure can reduce film does not match and strengthens detector sensitivity and resolution ratio; In addition, for identical array scale, little pixel structure means littler detector and Lens, thereby can dwindle weight and the size of infrared thermal imagery instrument system, increases the portability of thermal infrared imager.
The reduced image elemental size is had higher requirement to the MEMS processing technology.For traditional infrared detector with micro-bridge structure, general aluminium (Al) post that adopts supports micro-bridge structure, for example " amorphous silicon technology is in the development of CEA/LETi " (SPIE (SPIE) photodetector material in 2002 and equipment, SPIE volume 4650,138～149 pages, E MOTTIN. etc., " Amorphous silicontechnology improvement at CEA/LETI; " Proceedings of SPIE PhotodetectorMaterials and Devices VII, 2002.SPIE Vol.4650, pp.138-149), this structure is had relatively high expectations to aluminium filling effect and etching selection ratio in through hole, in addition outer aluminium pole supports that also to exist resistivity big and be prone to problem such as electromigration, thereby influences the overall performance of Infrared Detectors; Therefore, how to use for reference conventional semiconductor process modification Infrared Detectors process for machining and manufacturing, solve its MEMS artistic face planarization problem etc., and increase substantially finished product rate and reliability, become the technical problem that industry needs to be resolved hurrily.
Summary of the invention
In order to improve the processing technology level of Infrared Detectors, improve the processing compatibility of its CMOS and MEMS part, the present invention proposes a kind of Cu post infrared detector structure and manufacture method based on Damascus technics.
The present invention solves the technical scheme that its technical problem adopts:
A kind of infrared detector with micro-bridge structure is characterized in that comprising:
Silicon substrate is as the reading circuit of Infrared Detectors;
Metallic reflector is deposited on the described silicon substrate;
Dielectric layer is deposited in the groove of metallic reflector, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer and be used for the first release guard layer as the releasing sacrificial layer protection be deposited on described dielectric layer and the metallic reflector, and chemical wet etching forms through hole;
Copper or tungsten bridge pier are deposited in the through hole of sacrifice layer;
Metal electrode is deposited on copper or tungsten bridge pier and the first release guard layer;
The sensitive material detecting layer is deposited on metal electrode and the first release guard layer.
Support micro-bridge structure with copper or tungsten post in infrared detector structure provided by the invention, be conducive to realize CMP technology, the planarization of microbridge plane is conducive to following process.
Further, described this Infrared Detectors also comprises:
Dielectric insulation layer is deposited on metal electrode and the sensitive material detecting layer;
The INFRARED ABSORPTION enhancement layer is deposited on the dielectric insulation layer.
The second release guard layer, the second release guard layer surround this sensitive material detecting layer and this metal electrode, in order to protect sensitive material detecting layer and metal electrode.
Metallic reflector of the present invention is high infrared reflection rate metallic film, and metal is selected from aluminium, gold, silver or copper.
Sacrificial layer material of the present invention is selected from non-crystalline silicon, polysilicon or the silica with the CMOS process compatible.
The material of dielectric layer of the present invention, dielectric insulation layer, the first release guard layer and the second release guard layer is silica, silicon oxynitride, silicon nitride and carborundum, or
The silicon oxynitride of non-stoichiometric, silicon nitride and carborundum, or
Be mixed with the above-mentioned material of boron, phosphorus.
Metal electrode of the present invention is selected from the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and tantalum or the tantalum nitride electrode of titanium electrode or stacked on top of one another.Tantalum nitride (TaN is) Cu diffusion barrier material, metal electrode can also be the composite bed of tantalum nitride/tantalum (TaN/Ta), in addition, than the resistivity that can change the TaN film, be conducive to the TaN film of INFRARED ABSORPTION by the Ta/N element in the adjusting TaN film most;
Sensitive material detecting layer of the present invention is non-crystalline silicon or vanadium oxide, and it can realize with CMOS technology well compatible.
INFRARED ABSORPTION enhancement layer of the present invention is Titanium, tantalum, platinum or is metal compound films such as titanium nitride, tantalum nitride.The square resistance of adjusting film by the N constituent content that changes film makes its INFRARED ABSORPTION effect reach best about 377ohm/.
Another purpose of the present invention provides the manufacture method such as above-mentioned Infrared Detectors, may further comprise the steps:
A. form metallic reflector and graphical at silicon substrate;
B. form dielectric layer at metallic reflector, and realize its planarization;
C. etching dielectric layer and be parked in the metallic reflector upper surface guarantees that the height of dielectric layer is consistent with the height of metallic reflector;
D. deposition of sacrificial layer and chemical-mechanical planarization stop layer;
E. etching microbridge through hole, plated metal copper/tungsten and chemically mechanical polishing planarization;
F. deposit metal electrodes layer and detector sensitive material layer are also graphical, metallization medium layer;
G. deposit INFRARED ABSORPTION enhancement layer and graphical, deposition release guard layer;
H. graphical micro-bridge structure, releasing sacrificial layer obtains unsettled micro-bridge structure;
After the planarization that realizes dielectric layer, the end point determination of employing dry etching is come the etching medium and is parked in the surface of this metallic reflector, and is consistent with the height of this metallic reflector with the height of guaranteeing this dielectric layer.
Manufacture method of the present invention utilizes CMOS copper wiring technology in Damascus to make micro-bridge structure.Damascus technics is the maturation process in the integrated circuit interconnection technology, can effectively reduce the interconnection resistance value, reduce the power consumption of chip, (can set up Li Jiayuan etc. referring to data, multilayer interconnection new technology in the preparation of VLSI chip, " semiconductor technology ", 2006.11), " utilize Damascus technics to prepare the performance that Cu rod structure Infrared Detectors not only can improve the working ability of its MEMS part but also improve Infrared Detectors ".
The effect that the present invention is useful is:
(1), the present invention utilizes Damascus copper technology to make the processing and manufacturing ability that the very big degree of Infrared Detectors promotes Infrared Detectors, for the processing of small size pixel structure provides processing method, CMOS and MEMS processing compatibility partly in the detector have also been improved in addition.
(2), infrared detector structure of the present invention can introduce CMP process (CMP) in the processing of Infrared Detectors, realizes the microbridge plane of planarization, is conducive to the carrying out of subsequent technique.
(3), the present invention utilizes the Cu post to support micro-bridge structure, and is better with respect to traditional Al column performance, bigger than the 1.75*10-8ohm.m of Cu mainly due to the resistivity 2.83*10-8ohm.m of Al, and electromigration easily takes place in Al.
(1), micro-bridge structure of the present invention additional INFRARED ABSORPTION enhancement layer, when pixel dimension is dwindled the INFRARED ABSORPTION effect that can obviously improve micro-bridge structure when causing the INFRARED ABSORPTION effective area to reduce.
Description of drawings
Figure 1 shows that the schematic diagram of infrared detector with micro-bridge structure in the embodiment of the invention;
Fig. 2 is the profile of infrared detector with micro-bridge structure in the embodiment of the invention;
Fig. 3 (a) and (b), (c), (d), (e), (f), (g), (h), (i), (j), (k), (l), (m), (n), (o) are for making micro-bridge structure preparation method schematic diagram of the present invention.
The specific embodiment
The invention will be further described below in conjunction with accompanying drawing:
Please referring to Fig. 1 and Fig. 2, present embodiment proposes a kind of Infrared Detectors, is applicable to the safety detection of electric power networks, the detection of forest fire alarm and the places such as detection of human body temperature.The invention micro-bridge structure can be widely used in non-refrigerated infrared detector, gas detector, little heating platform, micro-electro-mechanical systems such as the infrared emitter device device of unifying.
Infrared Detectors comprises reading circuit 11, first dielectric layer 121, metallic reflector 13, second dielectric layer 122, sacrifice layer 14, copper post 16, the first release guard layer 151, metal electrode 17, sensitive material detecting layer 18, dielectric insulation layer 19, infrared absorption layer 20, the second release guard layer 152 successively.
Infrared Detectors silicon substrate of the present invention is as the reading circuit of Infrared Detectors;
First dielectric layer 121 is deposited in the groove of metallic reflector 13, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer 14 and be used for the first release guard layer 151 as the releasing sacrificial layer protection be deposited on described first dielectric layer 121 and the metallic reflector 13, and chemical wet etching forms through hole;
Metal electrode 17 is deposited on copper or tungsten bridge pier and the release guard layer;
Sensitive material detecting layer 18 is deposited on metal electrode 17 and the first release guard layer 151.
The reading circuit 11 of Infrared Detectors is made by the CMOS technology of standard, and the metallic reflector 13 of Infrared Detectors is realized being electrically connected with reading circuit 11 by the tungsten through hole.Metallic reflector 13 is deposited on first dielectric layer 121, uses technologies such as photoetching, etching to realize metallic reflector 13 patterns, and its effect is the reflecting layer as infrared spectrum, improves the INFRARED ABSORPTION of Infrared Detectors, thereby improves the responsiveness of Infrared Detectors.In the present embodiment, metallic reflector 13 is formed by the physical vapor deposition (PVD) technology, and this metal material can be metallic films such as aluminium, tantalum, titanium.
Metal electrode 17 is deposited on the first release guard layer 151 and the copper post 16, as the electrical connection material of sensitive material and copper post 16.In the present embodiment, the material of metal electrode 17 can be the metallic films such as lamination of lamination, tantalum and the tantalum nitride of the titanium, titanium nitride, tantalum, tantalum nitride, titanium and the titanium nitride that are formed by the physical vapor deposition (PVD) technology.Use photoetching and dry etching to realize the graphical of metal electrode 17.
Sensitive material detecting layer 18 is deposited on the metal electrode 17, as infrared-sensitive material.In the present embodiment, sensitive material can be the thin-film material that non-crystalline silicon or vanadium oxide etc. have higher temperature-coefficient of electrical resistance.Non-crystalline silicon forms by strengthening PCVD (PECVD) technology, and vanadium oxide is formed by the physical vapor deposition (PVD) technology.
On the sensitive material, deposition medium insulating barrier 19, infrared absorption layer 20 and the second release guard layer 152 successively.In the present embodiment, infrared absorption layer 20 materials can be that titanium nitride and tantalum nitride etc. have the very material of high IR absorptivity as the primary structure that improves Infrared Detectors INFRARED ABSORPTION efficient, are formed by the physical vapor deposition (PVD) technology; Dielectric insulation layer 19 is as the insulation system between sensitive material and the infrared absorption layer 20, but insulating materials such as silica and silicon nitride form by strengthening PCVD (PECVD) technology; Release guard layer 152 is selected than higher silica or silicon nitride in the time of can being xenon difluoride release non-crystalline silicon as the protective material of releasing sacrificial layer 14, forms by strengthening PCVD (PECVD) technology.
Utilize photoetching and dry etching to make the microbridge figure of detector at last, releasing sacrificial layer 14 non-crystalline silicons in xenon difluoride gas form the micro-bridge structure 30 of unsettled Infrared Detectors.
Fig. 3 is the manufacture method flow chart of the Infrared Detectors of preferred embodiment of the present invention.
The first step, shown in Fig. 3 (a), plated metal reflecting layer 13 and graphical on first dielectric layer 121, second metallization medium layer 122 and the chemically mechanical polishing (CMP) then, the thickness of second dielectric layer 122 after the polishing is higher than metallic reflector 13.
In second step, shown in Fig. 3 (b), the end point determination of employing dry etching realizes etching dielectric layer 122 and stops to metallic reflector 13 upper surfaces.
The 3rd step, shown in Fig. 3 (c), deposition of sacrificial layer 14 on metallic reflector 13 and second dielectric layer 122, the thickness of sacrifice layer 14 is generally about 2 microns.
The 4th step, shown in Fig. 3 (d), the deposition first release guard layer 151 on sacrifice layer 14.
The 5th step, shown in Fig. 3 (e), the graphical first release guard layer 151.
The 6th step, shown in Fig. 3 (f), graphical sacrifice layer 14.
The 7th step, shown in Fig. 3 (g), use Damascus copper wiring technique electro-coppering, the minimum point of copper must be higher than the first release guard layer 151.
In the 8th step, shown in Fig. 3 (h), chemically mechanical polishing (CMP) copper is parked in the upper surface of the first release guard layer 151.
In the 9th step, shown in Fig. 3 (i), deposit metal electrodes 17 is also graphical.
In the tenth step, shown in Fig. 3 (j), deposition sensitive material detecting layer 18 is also graphical.
The 11 step, shown in Fig. 3 (k), deposition medium insulating barrier 19.
In the 12 step, shown in Fig. 3 (l), deposition infrared absorption layer 20 is also graphical.
In the 13 step, shown in Fig. 3 (m), deposit the second release guard layer 152.
In the 14 step, shown in Fig. 3 (n), etch micro-bridge structure 30 with the method that forms figure.
The 15 step is shown in Fig. 3 (o), by removing sacrifice layer 14 releases and forming unsettled micro-bridge structure 30.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (8)
1. infrared detector with micro-bridge structure is characterized in that comprising:
Silicon substrate is as the reading circuit of Infrared Detectors;
Metallic reflector is deposited on the described silicon substrate;
The copper bridge pier, use copper electroplating technology and the CMP process of standard in the copper wiring technique of Damascus to realize, the copper bridge pier had both discharged the supporting construction of back microbridge as sacrifice layer, also as the electric connection structure of microbridge and metallic reflector, the height of copper bridge pier is consistent with the height of release guard layer;
Dielectric layer is deposited in the groove of metallic reflector, and the height of this dielectric layer is consistent with the height of this metallic reflector;
Sacrifice layer and be used for the first release guard layer as the releasing sacrificial layer protection be deposited on described dielectric layer and the metallic reflector, and chemical wet etching forms through hole;
Metal electrode is deposited on copper bridge pier and the first release guard layer;
The sensitive material detecting layer is deposited on metal electrode and the first release guard layer;
This Infrared Detectors also comprises:
Dielectric insulation layer is deposited on metal electrode and the sensitive material detecting layer;
The INFRARED ABSORPTION enhancement layer is deposited on the dielectric insulation layer;
The second release guard layer, the second release guard layer surround this sensitive material detecting layer and this metal electrode, in order to protect sensitive material detecting layer and metal electrode;
Sacrificial layer material is selected from the non-crystalline silicon with the CMOS process compatible.
2. infrared detector with micro-bridge structure according to claim 1 is characterized in that described metallic reflector is high infrared reflection rate metallic film, and metal is selected from aluminium, gold, silver or copper.
3. infrared detector with micro-bridge structure according to claim 1 is characterized in that the material of dielectric layer, dielectric insulation layer, the first release guard layer and the second release guard layer is silica, silicon oxynitride, silicon nitride and carborundum, or
The silicon oxynitride of non-stoichiometric, silicon nitride and carborundum, or be mixed with the above-mentioned material of boron, phosphorus.
4. infrared detector with micro-bridge structure according to claim 2 is characterized in that described metal electrode is selected from the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and tantalum or the tantalum nitride electrode of titanium electrode or stacked on top of one another.
5. infrared detector with micro-bridge structure according to claim 1 is characterized in that the sensitive material detecting layer is non-crystalline silicon or vanadium oxide.
6. infrared detector with micro-bridge structure according to claim 1 is characterized in that, the INFRARED ABSORPTION enhancement layer is Titanium or tantalum or platinum or titanium nitride or tantalum nitride membrane.
7. the manufacture method of an infrared detector with micro-bridge structure as claimed in claim 2 is characterized in that, may further comprise the steps:
A. form metallic reflector and graphical at silicon substrate;
B. form dielectric layer at metallic reflector, and realize its planarization;
C. etching dielectric layer and be parked in the metallic reflector upper surface guarantees that the height of dielectric layer is consistent with the height of metallic reflector;
D. deposition of sacrificial layer and chemical-mechanical planarization stop layer;
E. etching sacrificial layer forms connecting through hole, and plated metal copper, uses copper CMP technology to form the copper bridge pier;
F. deposit metal electrodes layer and detector sensitive material layer are also graphical, metallization medium layer;
G. deposit INFRARED ABSORPTION enhancement layer and graphical, deposition release guard layer;
H. graphical micro-bridge structure, releasing sacrificial layer obtains unsettled micro-bridge structure;
After the planarization that realizes dielectric layer, the end point determination of employing dry etching is come the etching medium and is parked in the surface of this metallic reflector, and is consistent with the height of this metallic reflector with the height of guaranteeing this dielectric layer.
8. the manufacture method of infrared detector with micro-bridge structure according to claim 7 is characterized in that, this manufacture method utilizes CMOS copper wiring technology in Damascus to make micro-bridge structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910153649 CN101927976B (en) | 2009-09-30 | 2009-09-30 | Infrared detector with micro-bridge structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910153649 CN101927976B (en) | 2009-09-30 | 2009-09-30 | Infrared detector with micro-bridge structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101927976A CN101927976A (en) | 2010-12-29 |
| CN101927976B true CN101927976B (en) | 2013-09-25 |
Family
ID=43367474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910153649 Active CN101927976B (en) | 2009-09-30 | 2009-09-30 | Infrared detector with micro-bridge structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101927976B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9966394B2 (en) | 2015-12-25 | 2018-05-08 | Industrial Technology Research Institute | Light sensing device and fabricating method thereof |
| CN109285759A (en) * | 2018-09-11 | 2019-01-29 | 上海华虹宏力半导体制造有限公司 | The film build method of amorphous silicon |
| CN109470369A (en) * | 2018-11-09 | 2019-03-15 | 无锡元创华芯微机电有限公司 | A kind of preparation method of infrared detector |
Families Citing this family (79)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102092671B (en) * | 2010-12-30 | 2016-01-06 | 上海集成电路研发中心有限公司 | The manufacture method of smooth sacrifice layer and MEMS micro-bridge structure |
| CN102683475B (en) * | 2011-03-18 | 2015-05-27 | 浙江大立科技股份有限公司 | Manufacturing method of infrared detector based on temporary release protective layer |
| CN102205942B (en) * | 2011-05-13 | 2015-11-04 | 上海集成电路研发中心有限公司 | MEMS sacrificial layer structure making process |
| CN102275865B (en) * | 2011-05-13 | 2016-06-01 | 上海集成电路研发中心有限公司 | Pressure transducer and manufacture method thereof |
| CN102951597B (en) * | 2011-08-19 | 2016-03-30 | 烟台睿创微纳技术有限公司 | A kind of preparation method of infrared detector with micro-bridge structure and micro-bridge structure |
| CN102798471B (en) * | 2011-10-19 | 2015-08-12 | 清华大学 | A kind of infrared eye and preparation method thereof |
| US8846129B2 (en) * | 2012-02-13 | 2014-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Biological sensing structures and methods of forming the same |
| CN103359677B (en) * | 2012-03-29 | 2015-11-25 | 比亚迪股份有限公司 | A kind of Infrared Detectors encapsulating structure and preparation method thereof |
| CN102659068B (en) * | 2012-06-05 | 2016-06-22 | 上海集成电路研发中心有限公司 | A kind of MEMS resonant cavity configuration |
| DE102012212445A1 (en) * | 2012-07-17 | 2014-01-23 | Robert Bosch Gmbh | Micromechanical structure, in particular sensor arrangement, and corresponding operating method |
| CN102874738B (en) * | 2012-10-08 | 2016-06-15 | 上海集成电路研发中心有限公司 | Infrared Detectors and manufacture method thereof |
| CN102942158B (en) * | 2012-11-05 | 2017-05-31 | 上海集成电路研发中心有限公司 | The manufacture method of detecting structure |
| US8748205B1 (en) * | 2012-11-30 | 2014-06-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS structure with adaptable inter-substrate bond |
| CN103076099B (en) * | 2013-01-23 | 2015-09-16 | 中国科学院微电子研究所 | Single-chip integration infrared focal plane detector |
| CN103369450A (en) * | 2013-06-25 | 2013-10-23 | 歌尔声学股份有限公司 | Manufacturing method of waterproof thin sheet used in microphone |
| WO2015033740A1 (en) * | 2013-09-05 | 2015-03-12 | 富士電機株式会社 | Silicon carbide semiconductor element and method for manufacturing silicon carbide semiconductor element |
| CN104649213B (en) * | 2013-11-19 | 2016-04-13 | 上海巨哥电子科技有限公司 | A kind of micro-bridge structure and preparation method thereof |
| CN105261622B (en) * | 2014-06-03 | 2017-12-22 | 上海丽恒光微电子科技有限公司 | A kind of manufacture method of imaging detector |
| CN105161507B (en) * | 2015-08-31 | 2018-05-29 | 上海集成电路研发中心有限公司 | Imaging detector pixel structure and preparation method thereof is mixed outside double-deck visible red |
| CN105206635B (en) * | 2015-08-31 | 2018-05-29 | 上海集成电路研发中心有限公司 | Enhance radioparent two-layer hybrid imaging detector pixel structure and preparation method thereof |
| CN105206637B (en) * | 2015-08-31 | 2018-06-22 | 上海集成电路研发中心有限公司 | Mixing imaging detector pixel structure with step support and preparation method thereof |
| CN105565249B (en) * | 2015-12-28 | 2017-08-22 | 上海集成电路研发中心有限公司 | A kind of micro-bridge structure and its array of micro- radiation detector |
| CN106935676B (en) * | 2015-12-31 | 2019-03-26 | 上海丽恒光微电子科技有限公司 | A kind of infrared detector and preparation method thereof |
| CN105424199B (en) * | 2015-12-31 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of the infrared detector unit structure and manufacturing method of difference output |
| CN106124059B (en) * | 2016-07-18 | 2018-11-09 | 上海集成电路研发中心有限公司 | Infrared detector pixel structure and preparation method thereof |
| CN106092332B (en) * | 2016-07-18 | 2018-12-18 | 上海集成电路研发中心有限公司 | From the monitoring device of vacuum leak, preparation method, system and from monitoring method |
| CN106430076B (en) * | 2016-07-28 | 2018-04-03 | 上海集成电路研发中心有限公司 | Height filling infrared detector pixel structure and preparation method thereof |
| CN106249402A (en) * | 2016-08-31 | 2016-12-21 | 常州创微电子机械科技有限公司 | A kind of one-dimensional micro mirror of Electromagnetic Drive |
| US10168349B2 (en) * | 2016-09-08 | 2019-01-01 | Robert Bosch Gmbh | Bolometer fluid flow sensor |
| CN106680234B (en) * | 2016-11-29 | 2019-09-20 | 中国电子科技集团公司第四十八研究所 | A kind of optical gas sensor core, sensor and core preparation method |
| CN106802310A (en) * | 2017-01-19 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of single chip integrated MEMS gas sensors |
| CN107055464A (en) * | 2017-01-19 | 2017-08-18 | 烟台睿创微纳技术股份有限公司 | A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer |
| CN107331674B (en) * | 2017-06-26 | 2020-03-20 | 上海集成电路研发中心有限公司 | Infrared image sensor and manufacturing method thereof |
| CN109607472B (en) * | 2017-12-28 | 2019-12-27 | 南京理工大学 | Method for manufacturing silicon nitride-titanium-silicon nitride cantilever beam for supporting micro-bridge structure |
| CN109455664B (en) * | 2018-09-26 | 2021-01-29 | 上海集成电路研发中心有限公司 | Microbridge assembly, infrared detector and manufacturing method of infrared detector |
| CN109256401A (en) * | 2018-10-31 | 2019-01-22 | 南京方旭智芯微电子科技有限公司 | A kind of production method of micro-bridge structure, microelectronic component and micro-bridge structure |
| CN109928357A (en) * | 2019-02-27 | 2019-06-25 | 上海华虹宏力半导体制造有限公司 | A kind of MEMS bridge structure and forming method thereof |
| CN110120437B (en) * | 2019-04-30 | 2021-04-30 | 上海集成电路研发中心有限公司 | Infrared detector structure with high filling factor and manufacturing method thereof |
| CN110940419B (en) * | 2019-08-30 | 2021-04-30 | 上海集成电路研发中心有限公司 | Infrared detector and preparation method thereof |
| CN111024244B (en) * | 2019-11-28 | 2021-12-10 | 浙江大立科技股份有限公司 | Semiconductor structure with micro-bridge structure, forming method thereof and micro-structure sensor |
| CN111392686B (en) * | 2020-03-31 | 2023-09-05 | 上海集成电路研发中心有限公司 | Infrared MEMS structure based on upper and lower distributed electrodes and manufacturing method thereof |
| CN111874860A (en) * | 2020-06-17 | 2020-11-03 | 上海集成电路研发中心有限公司 | Infrared detector and manufacturing method thereof |
| CN111960377B (en) * | 2020-07-29 | 2024-03-15 | 上海集成电路研发中心有限公司 | Manufacturing method of micro-bridge deck of MEMS sensor |
| CN111847372A (en) * | 2020-07-31 | 2020-10-30 | 上海华虹宏力半导体制造有限公司 | Infrared MEMS bridge column structure and process method |
| CN112697280B (en) * | 2020-12-30 | 2022-06-28 | 上海集成电路研发中心有限公司 | Thermal image sensor structure with support column and manufacturing method |
| CN113049115B (en) * | 2021-01-29 | 2022-11-22 | 武汉高芯科技有限公司 | Pixel-level packaged uncooled infrared detector and manufacturing method thereof |
| CN113328000B (en) * | 2021-02-01 | 2021-12-28 | 北京北方高业科技有限公司 | Infrared detector pixel structure and infrared detector |
| CN113328001B (en) * | 2021-02-01 | 2021-12-28 | 北京北方高业科技有限公司 | Infrared detector pixel structure and infrared detector |
| CN114088209B (en) * | 2021-03-26 | 2023-08-01 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology |
| CN113720483B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS technology |
| CN113720452B (en) * | 2021-03-26 | 2023-03-24 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113720465B (en) * | 2021-03-26 | 2023-05-12 | 北京北方高业科技有限公司 | Infrared detector and pixel based on CMOS technology and preparation method thereof |
| CN113720453B (en) * | 2021-03-26 | 2022-09-06 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113720467B (en) * | 2021-03-26 | 2022-09-06 | 北京北方高业科技有限公司 | Infrared detector mirror image pixel based on CMOS (complementary Metal oxide semiconductor) process and infrared detector |
| CN114088201A (en) * | 2021-03-26 | 2022-02-25 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN113720450A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process |
| CN113720474B (en) * | 2021-03-26 | 2022-11-15 | 北京北方高业科技有限公司 | Infrared detector mirror image element based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113720449B (en) * | 2021-03-26 | 2022-09-06 | 北京北方高业科技有限公司 | Infrared detector based on CMOS (complementary Metal oxide semiconductor) process |
| CN113720482A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN114088208B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology and preparation method thereof |
| CN113720454B (en) * | 2021-03-26 | 2023-03-24 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN114112055B (en) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | Infrared detector based on CMOS technology and preparation method thereof |
| CN113865723B (en) * | 2021-03-26 | 2022-12-02 | 北京北方高业科技有限公司 | Infrared detector mirror image pixel based on CMOS (complementary Metal oxide semiconductor) process and infrared detector |
| CN114112057B (en) * | 2021-03-26 | 2023-03-24 | 北京北方高业科技有限公司 | Infrared detector pixel and infrared detector based on CMOS (complementary metal oxide semiconductor) process |
| CN113432727B (en) * | 2021-06-25 | 2023-03-24 | 北京北方高业科技有限公司 | Non-refrigeration solid focal plane detector |
| CN113447142A (en) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | Reinforced CMOS infrared detector |
| CN113447140B (en) * | 2021-06-25 | 2023-01-06 | 北京北方高业科技有限公司 | CMOS infrared microbridge detector |
| CN113447146B (en) * | 2021-06-25 | 2022-12-02 | 北京北方高业科技有限公司 | Step type infrared detector |
| CN113432725B (en) * | 2021-06-25 | 2022-10-11 | 北京北方高业科技有限公司 | Infrared detector with multilayer structure based on CMOS (complementary Metal oxide semiconductor) process |
| CN113447148B (en) * | 2021-06-25 | 2022-12-02 | 北京北方高业科技有限公司 | Infrared focal plane detector |
| CN113432726B (en) * | 2021-06-25 | 2023-03-24 | 北京北方高业科技有限公司 | Infrared detector with combined columnar structure |
| CN113447141B (en) * | 2021-06-25 | 2022-12-02 | 北京北方高业科技有限公司 | Infrared microbridge detector based on CMOS (complementary Metal oxide semiconductor) process |
| CN113532661A (en) * | 2021-07-12 | 2021-10-22 | 北京北方高业科技有限公司 | Single-layer infrared focal plane detector |
| CN113340436B (en) * | 2021-07-12 | 2023-04-14 | 北京北方高业科技有限公司 | Uncooled CMOS infrared detector |
| CN113594193B (en) * | 2021-09-30 | 2022-01-25 | 西安中科立德红外科技有限公司 | Hybrid imaging detector chip based on semiconductor integrated circuit and preparation method |
| CN113639879A (en) * | 2021-10-13 | 2021-11-12 | 北京北方高业科技有限公司 | Preparation method of infrared microbridge detector with multilayer structure and infrared microbridge detector |
| CN114112058A (en) * | 2021-11-19 | 2022-03-01 | 深圳迈塔兰斯科技有限公司 | Microbridge structure and preparation method thereof |
| CN113990995B (en) * | 2021-12-27 | 2022-03-29 | 南昌凯捷半导体科技有限公司 | Mini/micro LED with Ag reflector and manufacturing method thereof |
| CN114964512A (en) * | 2022-07-27 | 2022-08-30 | 北京中科海芯科技有限公司 | Micro-bolometer, manufacturing method and infrared detector |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000033032A1 (en) * | 1998-12-01 | 2000-06-08 | Daewoo Electronics Co., Ltd. | Infrared bolometer with an enhanced structural stability and integrity |
| WO2005034248A1 (en) * | 2003-10-09 | 2005-04-14 | Ocas Corp. | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| CN101038210A (en) * | 2006-03-17 | 2007-09-19 | 日本电气株式会社 | Infrared detecting apparatus and infrared imaging apparatus using the same |
| KR100785738B1 (en) * | 2006-06-19 | 2007-12-18 | 한국과학기술원 | Bolometer |
| CN101148242A (en) * | 2006-09-18 | 2008-03-26 | Ulis股份公司 | Electronic detection device and detector comprising such a device |
| CN101249935A (en) * | 2007-03-31 | 2008-08-27 | 浙江大立科技股份有限公司 | Thermal isolation micro-bridge structure and processing method thereof |
| CN101386401A (en) * | 2008-10-16 | 2009-03-18 | 上海集成电路研发中心有限公司 | Monitoring structure of infrared detector pixel stress and monitoring method |
| CN101445215A (en) * | 2008-10-16 | 2009-06-03 | 上海集成电路研发中心有限公司 | Infrared receiver and manufacturing method thereof |
| CN101460816A (en) * | 2006-05-25 | 2009-06-17 | 松下电工株式会社 | Infrared sensor |
-
2009
- 2009-09-30 CN CN 200910153649 patent/CN101927976B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000033032A1 (en) * | 1998-12-01 | 2000-06-08 | Daewoo Electronics Co., Ltd. | Infrared bolometer with an enhanced structural stability and integrity |
| WO2005034248A1 (en) * | 2003-10-09 | 2005-04-14 | Ocas Corp. | Bolometric infrared sensor having two layer structure and method for manufacturing the same |
| CN101038210A (en) * | 2006-03-17 | 2007-09-19 | 日本电气株式会社 | Infrared detecting apparatus and infrared imaging apparatus using the same |
| CN101460816A (en) * | 2006-05-25 | 2009-06-17 | 松下电工株式会社 | Infrared sensor |
| KR100785738B1 (en) * | 2006-06-19 | 2007-12-18 | 한국과학기술원 | Bolometer |
| CN101148242A (en) * | 2006-09-18 | 2008-03-26 | Ulis股份公司 | Electronic detection device and detector comprising such a device |
| CN101249935A (en) * | 2007-03-31 | 2008-08-27 | 浙江大立科技股份有限公司 | Thermal isolation micro-bridge structure and processing method thereof |
| CN101386401A (en) * | 2008-10-16 | 2009-03-18 | 上海集成电路研发中心有限公司 | Monitoring structure of infrared detector pixel stress and monitoring method |
| CN101445215A (en) * | 2008-10-16 | 2009-06-03 | 上海集成电路研发中心有限公司 | Infrared receiver and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9966394B2 (en) | 2015-12-25 | 2018-05-08 | Industrial Technology Research Institute | Light sensing device and fabricating method thereof |
| CN109285759A (en) * | 2018-09-11 | 2019-01-29 | 上海华虹宏力半导体制造有限公司 | The film build method of amorphous silicon |
| CN109285759B (en) * | 2018-09-11 | 2021-08-20 | 上海华虹宏力半导体制造有限公司 | Method for forming amorphous silicon film |
| CN109470369A (en) * | 2018-11-09 | 2019-03-15 | 无锡元创华芯微机电有限公司 | A kind of preparation method of infrared detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101927976A (en) | 2010-12-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101927976B (en) | Infrared detector with micro-bridge structure and manufacturing method thereof | |
| CN105424199B (en) | A kind of the infrared detector unit structure and manufacturing method of difference output | |
| US7883917B2 (en) | Semiconductor device with bonding pad | |
| CN101445215B (en) | Infrared receiver and manufacturing method thereof | |
| CN102353459B (en) | Detector and manufacture method thereof | |
| CN106629578B (en) | Infrared detector and its manufacturing method with micro-bridge structure | |
| JP2003532067A (en) | Microbolometer and method for forming the same | |
| CN102275865B (en) | Pressure transducer and manufacture method thereof | |
| TW200952166A (en) | Image sensor device and method for manufacturing the same | |
| CN106783901B (en) | The manufacturing method and domain structure of backside-illuminated sensor | |
| JP2006226890A (en) | Thermal infrared detection element | |
| TW201111758A (en) | Optical sensor | |
| CN106298827A (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| JP2005221450A (en) | Physical quantity sensor | |
| CN105206637B (en) | Mixing imaging detector pixel structure with step support and preparation method thereof | |
| CN111024244B (en) | Semiconductor structure with micro-bridge structure, forming method thereof and micro-structure sensor | |
| JP4915555B2 (en) | Infrared sensor | |
| TW200821636A (en) | Solid-state image pickup device and method of fabricating the same | |
| TW200816468A (en) | Image sensor and method of fabricating the same | |
| CN106124066A (en) | The microbolometer of a kind of high fill factor and preparation method | |
| US8692348B2 (en) | Photodetector | |
| CN111987115A (en) | Image sensor device and method of forming the same | |
| CN111854976A (en) | Infrared thermopile sensor and manufacturing method thereof | |
| CN108885136B (en) | Microbolometer structure | |
| JP4960724B2 (en) | Infrared sensor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |