CN101445215B - Infrared receiver and manufacturing method thereof - Google Patents
Infrared receiver and manufacturing method thereof Download PDFInfo
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- CN101445215B CN101445215B CN200810201307.2A CN200810201307A CN101445215B CN 101445215 B CN101445215 B CN 101445215B CN 200810201307 A CN200810201307 A CN 200810201307A CN 101445215 B CN101445215 B CN 101445215B
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Abstract
The invention provides an infrared receiver and a manufacturing method thereof. A metallic reflecting layer, a dielectric layer, a sacrifice layer, a sensitive material detecting layer and a metallic electrode are precipitated on a silicon bulk of the infrared receiver in sequence. The metallic reflecting layer is provided with a metallic reflection pattern. The height of the dielectric layer and the height of the metallic reflecting layer are the same. The invention also provides the manufacturing method of the infrared receiver, comprising the following steps: the metallic reflecting layer is formed on the silicon bulk and patterning is carried out on the metallic reflecting layer; the dielectric layer is formed on the metallic reflecting layer and planarization is carried out on the dielectric layer; medium is etched and reserved on the surface of a metallic layer, and the height of the dielectric layer and the height of the metallic reflecting layer are confirmed to be the same; the sacrifice layer is precipitated; and a microbridge infrared absorption structure is fabricated.
Description
Technical field
The present invention relates to a kind of manufacturing process of Infrared Detectors, and be particularly related to a kind of for pyroscan and manufacture method thereof.
Background technology
That microelectromechanical systems (MEMS) technology has is small, intelligent, can carry out, can be integrated, the plurality of advantages such as processing compatibility good, cost is low, therefore it has started to be widely used in the numerous areas that comprises infrared detection technique field.Infrared Detectors is application a kind of MEMS product very widely in infrared detection technique field, and it utilizes sensitive material detecting layer (being generally non-crystalline silicon or oxidation machine) absorb infrared ray and convert it into the signal of telecommunication, realizes accordingly thermal imaging function.
Infrared Detectors technique is general and CMOS processing compatibility is poor, is difficult to realize large-scale production so early stage.Because the market demand of MEMS product expands gradually, the concept of CMOS-MEMS is proposed by people gradually in recent years.CMOS-MEMS utilizes CMOS fabrication techniques periphery to read and signal processing circuit, then on cmos circuit, makes the structure of sensor and micro mechanical system, and processing compatibility problem is the key of puzzlement CMOS-MEMS technology all the time.
Take non-refrigeration type Infrared Detectors as example, in its cellular construction, be widely used metallic reflector structure.After CMOS reading circuit preparation finishes, form metallic reflection layer pattern by depositing metal photoetching, etching.But form after metallic reflection layer pattern, its surface is no longer smooth, planarization problem can run up in subsequent technique, thereby brings a lot of problems to subsequent technique, as the photolithographic exposure degree of depth etc., and finally affects its properties of product, reliability and yield rate.
Therefore, how to provide a kind of Infrared Detectors and manufacture method thereof, solve its MEMS artistic face planarization problem, and increase substantially finished product rate and reliability, become industry technical problem urgently to be resolved hurrily.
Summary of the invention
The present invention proposes a kind of Infrared Detectors, deposits the dielectric layer of planarization on its metallic reflector, can realize the smooth of Infrared Detectors, is beneficial to the carrying out of subsequent technique.
In order to achieve the above object, invention proposes a kind of Infrared Detectors, deposits successively metallic reflector, dielectric layer, sacrifice layer, release guard layer, sensitive material detecting layer and metal electrode on its silicon substrate.Metallic reflector has metallic reflection pattern.The height of dielectric layer is consistent with the height of metallic reflector.
In an embodiment of the present invention, the material of this dielectric layer is silica, silicon oxynitride, silicon nitride and the carborundum of silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, or is mixed with the above-mentioned material of the impurity elements such as boron, phosphorus, carbon or fluorine.
In an embodiment of the present invention, this sensitive material detecting layer and this metal electrode are released protective layer and surround, in order to protect this sensitive material detecting layer and this metal electrode.
In an embodiment of the present invention, the material of this sensitive material detecting layer is non-crystalline silicon or vanadium oxide.
In an embodiment of the present invention, this metal electrode is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum of titanium electrode or stacked on top of one another and tantalum nitride electrode.
In order to achieve the above object, the present invention also proposes the manufacture method of above-mentioned Infrared Detectors, comprises the following steps: on silicon substrate, form metallic reflector and realize that it is graphical; On metallic reflector, form dielectric layer, and realize its planarization; Etching medium is also parked in metal level upper surface, determines that the height of dielectric layer and the height of metallic reflector are consistent; Deposition of sacrificial layer; And making microbridge INFRARED ABSORPTION structure.
In an embodiment of the present invention, form this dielectric layer on this metallic reflector time, adopted chemical vapor deposition method that this dielectric layer is deposited on this metallic reflector.
In an embodiment of the present invention, on this metallic reflector, form after this dielectric layer, adopt the technique of CMP process or spin-coating glass, realize the planarization of this dielectric layer.
In an embodiment of the present invention, after the planarization that realizes this medium, adopt the end point determination of dry etching to carry out etching medium and stop the surface to this metallic reflector, consistent to determine the height of this dielectric layer and the height of this metallic reflector.
Beneficial effect of the present invention is: solved MEMS artistic face planarization problem; Prevent the short circuit between metallic reflector, increased substantially finished product rate and reliability.
Accompanying drawing explanation
Figure 1 shows that the profile of the Infrared Detectors of preferred embodiment of the present invention;
Fig. 2 is the manufacture method flow chart of the Infrared Detectors of preferred embodiment of the present invention;
Fig. 3 has shown the cutaway view of Infrared Detectors after completing steps S20;
Fig. 4 has shown the cutaway view of Infrared Detectors after completing steps S22;
Fig. 5 has shown the cutaway view of Infrared Detectors after completing steps S24;
Fig. 6 has shown the cutaway view of Infrared Detectors after completing steps S26;
Fig. 7 has shown the cutaway view of Infrared Detectors after completing steps S26;
Fig. 8 is the operational flowchart of step S28 in Fig. 2.
the specific embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and coordinate appended graphic being described as follows.
Please refer to Fig. 1, Figure 1 shows that the profile of the Infrared Detectors of preferred embodiment of the present invention.The present embodiment proposes a kind of Infrared Detectors, and it can be for places such as the safety detection of electric power networks, the detection of forest fire alarm and the detections of human body temperature.
Infrared Detectors comprises silicon substrate 10, metallic reflector 11, dielectric layer 12, sacrifice layer 13, release guard layer 161, sensitive material detecting layer 14, metal electrode 15 and release guard layer 162 successively.
On sacrifice layer 13, deposit successively sensitive material detecting layer 14 and metal electrode 15, infrared light is converted to electric current reads for reading circuit to form INFRARED ABSORPTION mechanism.
On sacrifice layer 13, etch through hole 131, its role is to allow metal electrode 15 be contained in this through hole 131, metal electrode 15 is played a supporting role.In addition, sensitive material detecting layer 14 is protected by metallic reflector 11, sacrificing protection layer 161 and 162, metal electrode 15, can avoid sensitive material detecting layer 14 contaminated or damage.
Release guard layer 161,162 can be the films based on compositions such as Si, 0, C, N such as silica (SiO2), silicon oxynitride (Si0N), silicon nitride (SiN), carborundum (SiC); also can be the above-mentioned film of non-stoichiometric; the silica of for example oxygen enrichment or Silicon-rich; also can be the above-mentioned film of elements such as being mixed with B, P, C or F, such as fluorine silex glass (FSG), Pyrex (BPSG) or phosphorosilicate glass (PSG) etc. Release guard layer 161 and 162 surrounds sensitive material detecting layer 14 and metal electrode 15; in order in the time carrying out release process; play the effect of effective protection sensitive material detecting layer 14 and metal electrode 15; in manufacture process and use procedure, isolate extraneous pollution and damage simultaneously; improve the reliability of sensitive material detecting layer 14, also can avoid the short circuit of metal electrode 15.
Sensitive material detecting layer 14 is non-crystalline silicon or vanadium oxide etc.
In Infrared Detectors manufacture method of the present invention, Infrared Detectors is produced on silicon substrate 10.Fig. 2 is the manufacture method flow chart of the Infrared Detectors of preferred embodiment of the present invention.
Please also refer to Fig. 1 and Fig. 2, first Infrared Detectors manufacture method of the present invention carries out step S20, makes metallic reflector 11 and realize that it is graphical on silicon substrate 10.Realizing the graphical of metallic reflector 11 is on metallic reflector 11, to etch the metallic reflection pattern that is suitable for forming harmonic wave.In the present embodiment the depositing temperature of metallic reflector be 100° centigrade between 400 degree, to guarantee the stability of cmos circuit metal interconnecting wires, and meet the characteristic requirements of metallic reflector 11.
Then carry out step S22, on metallic reflector 11, form dielectric layer 12, and realize its planarization.This step can be completed by spin-coating glass (SOG, spin on glass) technique.
And the height of definite dielectric layer and the height of metallic reflector consistent.
Proceed step S26, deposition of sacrificial layer 13 on dielectric layer 12, makes by coating or CVD technique again.
Then carry out step S27, on sacrifice layer 13, chemical wet etching forms through hole 131 (as shown in Figure 1).
Step S28 is for making microbridge INFRARED ABSORPTION structure, and INFRARED ABSORPTION structure has comprised sensitive material detecting layer 14 and the metal electrode 15 that sacrifice layer 13 deposits successively above.This INFRARED ABSORPTION structure role is for absorbing infrared light, and then generation current reads for reading circuit.Step S28 for example comprises making sensitive material detecting layer 14, sacrificing protection layer 161 and 162, metal electrode 15.Step S28 will elaborate follow-up.
Fig. 3～Fig. 7 has shown respectively the sectional structure chart of the Infrared Detectors of completing steps S20～S26.
Referring to Fig. 3, in conjunction with referring to Fig. 2, Fig. 3 has shown the cutaway view of Infrared Detectors after completing steps S20, and as shown in the figure, metallic reflector 11 is stacked on silicon substrate 10, and has realized graphical.
Fig. 4 has shown the cutaway view of Infrared Detectors after completing steps S22, and as shown in the figure, dielectric layer 12 is deposited on metallic reflector 11, and has realized planarization.
Fig. 5 has shown the cutaway view of Infrared Detectors after completing steps S24, and as shown in the figure, dielectric layer 12 is etched, and its height is consistent with the height of metallic reflector 11.
Fig. 6 has shown the cutaway view of Infrared Detectors after completing steps S26, as shown in the figure, has deposited sacrifice layer 13 on dielectric layer 12.
Fig. 7 has shown the cutaway view of Infrared Detectors after completing steps S27, as shown in the figure, etches through hole 131 on sacrifice layer 13, for completing of subsequent step S28.
Fig. 8 is the operational flowchart of step S28 in Fig. 2.
Please refer to Fig. 1 and Fig. 8, it at least comprises the following steps:
Step S70: chemical wet etching forms through hole on sacrifice layer 13
Step S71: deposit release guard layer 161 on sacrifice layer 13;
Step S72: make sensitive material detecting layer 14 on release guard layer 161;
Step S74: be coated with photoresist on sensitive material detecting layer 14, make electrical connection figure by lithography in via bottoms;
Step S76: etching sensitive material detecting layer 14 is to form the electrical connection figure in through hole thereon;
Step S78: remove photoresist depositing metal layers;
Step S710: be coated with photoresist on metal level, and make metal electrode figure by lithography;
Step S712: carry out etching technics and form metal electrode 15;
Step S714: deposit release guard layer 162 on metal electrode 15.
In the time of deposition release guard layer 161 and sensitive material detecting layer 14 and subsequent technique, film also can (comprise sidewall and bottom) in through hole 131, and deposition forms medium; Subsequent step can be etched away the medium on through hole 131 bottom metal reflecting layer 11, and plated metal forms electrical connection; After depositing by metal, what through hole 131 bottoms were connected with metal electrode 15 is metallic reflector 11, the effect of playing electrical connection simultaneously and supporting.
Although the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on claims person of defining.
Claims (10)
1. an Infrared Detectors, is characterized in that, comprising:
Silicon substrate;
Metallic reflector, is deposited on this silicon substrate, and this metallic reflector has groove to form metallic reflection pattern;
Dielectric layer, is deposited in groove, and the height of this dielectric layer and the height of this metallic reflector consistent;
Sacrifice layer, is deposited on this dielectric layer and this metallic reflector, and chemical wet etching forms through hole;
Sensitive material detecting layer, is deposited on this sacrifice layer; And metal electrode, be deposited on this sensitive material detecting layer.
2. Infrared Detectors according to claim 1, it is characterized in that, the material of this dielectric layer is silica, silicon oxynitride, silicon nitride and the carborundum of silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, or is mixed with the above-mentioned material of boron, phosphorus, carbon or fluorine impurity element.
3. Infrared Detectors according to claim 1, is characterized in that, also comprises that release guard layer surrounds this sensitive material detecting layer and this metal electrode, in order to protect this sensitive material detecting layer and this metal electrode.
4. Infrared Detectors according to claim 3; it is characterized in that; wherein the material of this release guard layer is silica, silicon oxynitride, silicon nitride and the carborundum of silica, silicon oxynitride, silicon nitride and carborundum or non-stoichiometric, or is mixed with the above-mentioned material of boron, phosphorus, carbon or fluorine impurity element.
5. Infrared Detectors according to claim 1, is characterized in that, the material of this sensitive material detecting layer is non-crystalline silicon or vanadium oxide.
6. Infrared Detectors according to claim 1, is characterized in that, this metal electrode is the titanium nitride of titanium electrode, tantalum electrode, stacked on top of one another and the tantalum of titanium electrode or stacked on top of one another and tantalum nitride electrode.
7. a manufacture method for Infrared Detectors, is characterized in that, comprises the following steps:
On silicon substrate, form metallic reflector and realize that it is graphical;
On metallic reflector, form dielectric layer, and realize its planarization;
Etching medium is also parked in metal level upper surface, determines that the height of dielectric layer and the height of metallic reflector are consistent;
Deposition of sacrificial layer; And making microbridge INFRARED ABSORPTION structure;
The step of making described microbridge INFRARED ABSORPTION structure comprises:
On described sacrifice layer, chemical wet etching forms through hole;
On described sacrifice layer, deposit the first release guard layer;
On described the first release guard layer, make sensitive material detecting layer;
On described sensitive material detecting layer, be coated with photoresist, make electrical connection figure by lithography in described via bottoms;
Described in etching, sensitive material detecting layer is to form the electrical connection figure in through hole thereon;
Remove photoresist depositing metal layers;
On described metal level, be coated with photoresist, and make metal electrode figure by lithography;
Carry out etching technics and form metal electrode;
On described metal electrode, deposit the second release guard layer.
8. the manufacture method of Infrared Detectors according to claim 7, is characterized in that, while forming this dielectric layer, has adopted chemical vapor deposition method that this dielectric layer is deposited on this metallic reflector on this metallic reflector.
9. the manufacture method of Infrared Detectors according to claim 7, is characterized in that, forms after this dielectric layer on this metallic reflector, adopts the technique of CMP process or spin-coating glass, realizes the planarization of this dielectric layer.
10. the manufacture method of Infrared Detectors according to claim 7, it is characterized in that, after the planarization that realizes this medium, adopt the end point determination of dry etching to carry out etching medium and stop the surface to this metallic reflector, consistent to determine the height of this dielectric layer and the height of this metallic reflector.
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Address after: 310053 No. 639, bin Kang Road, Hangzhou, Zhejiang, Binjiang District Co-patentee after: SHANGHAI IC R&D CENTER Co.,Ltd. Patentee after: ZHEJIANG DALI TECHNOLOGY Co.,Ltd. Address before: Shanghai city B District 201203 Bibo Road, Zhangjiang hi tech Park No. 177 Huahong Science Park Building 4 Co-patentee before: ZHEJIANG DALI TECHNOLOGY Co.,Ltd. Patentee before: SHANGHAI IC R&D CENTER Co.,Ltd. |