CN101924081A - 影像感测器封装体及影像感测器模组 - Google Patents

影像感测器封装体及影像感测器模组 Download PDF

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CN101924081A
CN101924081A CN2009103032592A CN200910303259A CN101924081A CN 101924081 A CN101924081 A CN 101924081A CN 2009103032592 A CN2009103032592 A CN 2009103032592A CN 200910303259 A CN200910303259 A CN 200910303259A CN 101924081 A CN101924081 A CN 101924081A
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陈杰良
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Abstract

一种影像感测器封装体，其包括一个薄型基板及一个影像感测器。该薄型基板采用掺杂有碳纳米管的氧化铝作为基材，且该薄型基板具有多个接点。该影像感测器设置在该薄型基板上且具有一感测区，该感测区***环设多个与该多个接点相对应的焊垫，该多个焊垫分别电连接至该薄型基板的多个接点上。另外，本发明还涉及一种采用该影像感测器封装体的影像感测器模组。所述影像感测器封装体、影像感测器模组分别采用薄型基板，其可以降低结构总高度，进而达到结构尺寸轻量化的目的。

Description

影像感测器封装体及影像感测器模组
技术领域
本发明涉及一种影像感测器封装体及一种采用该影像感测器封装体的影像感测器模组，特别是涉及一种小尺寸的影像感测器封装体及一种小尺寸的影像感测器模组。
背景技术
影像感测器是数位相机最重要的元件之一，影像感测器封装体的尺寸也是决定数位相机尺寸大小和照相性能的一主要因素。
现有的影像感测器包括电荷耦合感测器(Charge Coupled Device，CCD)或互补金属氧化物半导体感测器(Complementary Metal-Oxide-Semiconductor，CMOS)。工作时，影像感测器通常安装在一电路板上，通过该电路板可对该影像感测器供电或进行信号传输，另外，影像感测器散工作时发出的热量可通过该电路板散发至外界。然而，现有的电路板，如玻璃纤维(FR4)电路板等，其在热传导性能上通常难以与影像感测器相匹配，例如，由于玻璃纤维热膨胀电路板(其基板采用玻璃纤维制成)的热膨胀系数(Coefficient of ThermalExpansion，CTE)与影像感测器(其基材为硅)的热膨胀系数差异较大，当影像感测器散发出热量时，该影像感测器与该电路板之间容易产生热应力，从而导致其两者之间相互挤压而变形。在现有技术中，通过增加电路板的厚度，可适当增强电路板的强度以抵抗电路板的变形，然而，此容易导致影像感测器安装到电路板后，其整体尺寸过大，从而无法适应电子产品小型化的需求。
有鉴于此，提供一种尺寸较小的影像感测器封装体及影像感测器模组实为必要。
发明内容
下面将以实施例说明一种尺寸较小的影像感测器封装体，以及一种采用该影像感测器封装体的影像感测器模组。
一种影像感测器封装体，其包括一个薄型基板及一个影像感测器。该薄型基板采用掺杂有碳纳米管的氧化铝作为基材，且该薄型基板具有多个接点。该影像感测器设置在该薄型基板上且具有一感测区，该感测区***环设多个与该多个接点相对应的焊垫，该多个焊垫分别电连接至该薄型基板的多个接点上。
一种影像感测器模组，包括一个影像感测器封装体及一个镜头模组。该影像感测器封装体包括一个薄型基板及一个影像感测器。该薄型基板采用掺杂有碳纳米管的氧化铝作为基材，且该薄型基板具有一个上表面及多个接点。该影像感测器设置在该薄型基板上且具有一感测区，该感测区***环设多个与该多个接点相对应的焊垫，该多个焊垫分别电连接至该薄型基板的多个接点上。该镜头模组包括一个镜筒，收容在该镜筒内的至少一镜片，以及连接于该镜筒的一个镜座，其中，该镜座设置在该薄型基板的上表面上。
相对于现有技术，该影像感测器封装体、影像感测器模组分别采用基材中掺杂有碳纳米管的薄型基板。该薄型基板采用掺杂有碳纳米管的氧化铝作为基材，因此即使厚度较小也可以具有较佳的强度，不易发生形变。另外，其热膨胀系数与影像感测器的热膨胀系数之间的差异较小，有利于减少影像感测器与薄型基板之间热膨胀不均匀所产生的热应力。并且，该薄型基板具有较佳的热传导性，影像感测器工作时散发出的热量可通过该薄型基板散发至外界，以保障影像感测器的性能稳定。
附图说明
图1是本发明第一实施便提供的影像感测器模组的剖视图，该影像感测器模组包含影像感测器封装体。
图2是本发明第二实施便提供的影像感测器模组的剖视图，该影像感测器模组包含影像感测器封装体。
具体实施方式
下面将结合附图对本发明作进一步的详细说明。
请参阅图1，本发明第一实施例提供一个影像感测器模组100，其包括一个影像感测器封装体110及一个镜头模组130，其中，该镜头模组130包括一个镜头132及一个镜座133，该镜头132设置在该镜座133上，该镜座133通过粘着体120固接在影像感测器封装体110上。
该影像感测器封装体110包括一个薄型基板111、一个影像感测器112，一个连接块113及多条焊线116。
薄型基板111采用掺杂有碳纳米管(Carbon Nanotube，CNT)的氧化铝(Al2O3)作为基材，其中，碳纳米管的重量占基材总重量的0.5％至10％，优选地为1％至5％。具体地，可通过将碳纳米管粉体与氧化铝微粒掺杂后，通过搅拌(stirring)、烧结(sintering)、研磨(grinding)及热等静压(Hot Isostatic Pressing，HIP)等步骤形成该基材。该薄型基板111为板状，其厚度可小于0.2mm，优选地小于0.15mm。由于该薄型基板111的基材中掺杂有碳纳米管，因此即使厚度较小也可以具有较佳的强度，即其杨氏弹性模量(Young’smodulus)较大，因此该薄型基板111可支撑该影像感测器112及镜头模组130而不易产生变形(deformation)。另外，由于该薄型基板111的基材中掺杂有碳纳米管，因此该基材具有较高的热传导率，且该基材的热膨胀系数与影像感测器112(其基材为硅)的热膨胀系数之间的差异较小，当影像感测器112散发出热量时，该影像感测器112与该薄型基板111之间的热应力(thermal stress)及热应变(thermal strain)较小。所以当该影像感测器112组装在该薄型基板111上时，该该薄型基板111不易发生变形。该基材的介电常数为8至11，热传导率为10W/m℃至40W/m℃。
该薄型基板111具有一个上表面111a，该上表面111a上形成有多个电性接点111c。该影像感测器112粘着于该薄型基板111的上表面111a上。该影像感测器112包括有感测区112b，在该感测区112b***环设有多个焊垫112a。
连接块113可为方形板状或圆形板状，其具有一个上表面113a及一个与该上表面113a相对的下表面113b。该支撑体113具有一贯穿其上下表面的通孔1200，该通孔1200的尺寸大于影像感测器112的尺寸以容纳该影像感测器112。另外，该连接块113的上表面113a上设置有多个第一接点113c，而其下表面113b上邻接其外缘设置有多个第二接点113d，该多个第二接点113d与该多个第一接点113c一一对应，每个第二接点113d与其对应的第一接点113c电性连接。该电性连接方式可以为表面粘着技术(Surface Mount Technology，SMT)、热压块技术(Hot Bar)及异向导电膜技术(Anisotropic Conductive Film，ACF)中任意一种。
该连接块113设置于薄型基板111的上表面111a上，且多个第二接点113d分别与薄型基板111上的多个接点111c电性连接。另外，每一焊线116的一端与影像感测器112的一焊垫112a电性连接，而其另一端与连接块113上一对应的第一接点113c电性连接。由此，该影像感测器112与该薄型基板111形成电性连接。该薄型基板111可具体为一个电路板，因此该影像感测器112可通过形成在该电路板上的线路输入工作电流，或进一步输出感测信号。
镜头132包括一镜筒132a，收容在该镜筒132a中的至少一镜片132b。在本实施例中，至少一镜片132b的数目具体为三个，且相邻两个镜片132b之间各设置一个间隔环132d，以使其相互隔离。
镜座133包括一顶板133a、一设于顶板133a中心的通孔133b及一沿该顶板132a向下延伸的脚座133c。该脚座133c的内壁围成一容室133d，该容室133d有一开口端，其内部尺寸略大于影像感测器封装体110的连接块113的***尺寸，以能够刚好容置该连接块113为适合。
镜头132的镜筒132b设置在镜座133的通孔133b内。该镜座133的脚座133c通过粘着体120与影像感测器封装体110粘接成一体。镜头132的镜片132a与影像感测器112的感测区112a相对正。
另外，该镜头模组130还包括收容在镜座133的容室133d内的一个透明板134，其位于镜头132与影像感测器112之间以对影像感测器112起保护作用，如防止外界的灰尘沾落在影像感测器112上。该透明板134靠近该镜头132的表面上形成有一层红外截止滤光膜135以以将人眼无法识别的红外光滤除。
该影像感测器封装体110采用了薄型基板111，可以降低结构总高度，进而达到结构尺寸轻小化的目的。并且，该薄型基板111具有较佳的热传导性，影像感测器112工作时散发出的热量可通过该薄型基板111散发至外界，以保障影像感测器112的性能稳定。进一步，该薄型基板111还具有较佳的强度，即其杨氏弹性模量(Young’s modulus)较大，因此其可支撑该影像感测器112及镜头模组130而不产生变形(deformation)，持久耐用。
请参阅图3，本发明第二实施例提供了一种影像感测器模组200，其与第一实施例提供的影像感测器模组100相类似，差异在于：粘着体220涂布于连接块213的上表面211a的***；镜座233具有一脚座233c，该脚座233c的***尺寸与连接块213、薄型基板211的***尺寸相当，其通过粘着体220粘接在连接块213的上表面213a上。另外，该影像感测器模组200的红外截止滤光膜235没有形成在透明板234上，而是设置于镜头232中。
可以理解的是，本领域技术人员还可于本发明精神内做其它变化，例如，在第一实施例中，省略连接块113，将每一焊线116的一端与影像感测器112的一焊垫112a电性连接，而其另一端直接与薄型基板111上的一接点111c电性连接。只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (12)

1.一种影像感测器封装体，其包括：
一个薄型基板，其采用掺杂有碳纳米管的氧化铝作为基材，且该薄型基板具有多个接点；
一个影像感测器，其设置在该薄型基板上且具有一感测区，该感测区***环设多个与该多个接点相对应的焊垫，该多个焊垫分别电连接至该薄型基板的多个接点上。
2.如权利要求1所述的影像感测器封装体，其特征在于，该薄型基板具有一个上表面，该多个接点及该影像感测器分别设置在该上表面上。
3.如权利要求1所述的影像感测器封装体，其特征在于，碳纳米管的重量占基材总重量的0.5％至10％。
4.如权利要求1所述的影像感测器封装体，其特征在于，碳纳米管的重量占基材总重量的1％至5％。
5.如权利要求1所述的影像感测器封装体，其特征在于，该薄型基板的厚度小于0.2mm。
6.如权利要求1所述的影像感测器封装体，其特征在于，该薄型基板的厚度小于0.15mm。
7.一种影像感测器模组，包括：
一个影像感测器封装体，其包括：
一个薄型基板，其采用掺杂有碳纳米管的氧化铝作为基材，且该薄型基板具有一个上表面及多个接点，
一个影像感测器，其设置在该薄型基板上且具有一感测区，该感测区***环设多个与该多个接点相对应的焊垫，该多个焊垫分别电连接至该薄型基板的多个接点上；及
一个镜头模组，其包括：
一个镜筒，
收容在该镜筒内的至少一镜片，及
连接于该镜筒的一个镜座，该镜座设置在该薄型基板的上表面上。
8.如权利要求7所述的影像感测器模组，其特征在于，该多个接点及该影像感测器分别设置在该上表面上。
9.如权利要求7所述的影像感测器模组，其特征在于，碳纳米管的重量占基材总重量的0.5％至10％。
10.如权利要求7所述的影像感测器模组，其特征在于，碳纳米管的重量占基材总重量的1％至5％。
11.如权利要求7所述的影像感测器模组，其特征在于，该薄型基板的厚度小于0.15mm。
12.如权利要求7所述的影像感测器模组，其特征在于，该薄型基板的厚度小于0.15mm。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378217A (zh) * 2012-04-24 2013-10-30 精材科技股份有限公司 光感装置及其制法
CN103426838A (zh) * 2012-05-18 2013-12-04 精材科技股份有限公司 晶片封装体及其形成方法
CN104811590A (zh) * 2014-01-27 2015-07-29 南昌欧菲光电技术有限公司 便携式电子装置及其相机模组
TWI608265B (zh) * 2016-07-13 2017-12-11 許志行 可攜式電子裝置及其影像擷取模組
CN107688268A (zh) * 2016-08-05 2018-02-13 赫克斯冈技术中心 照相机***
CN110086963A (zh) * 2018-01-25 2019-08-02 台湾东电化股份有限公司 摄像***
CN110277322A (zh) * 2019-06-12 2019-09-24 德淮半导体有限公司 半导体器件及其封装方法
US11289519B2 (en) 2017-01-30 2022-03-29 Sony Semiconductor Solutions Corporation Semiconductor device and electronic apparatus

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238995A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールおよびこれを搭載したカメラモジュール
TWI425825B (zh) * 2009-12-31 2014-02-01 Kingpak Tech Inc 免調焦距影像感測器封裝結構
US8310584B2 (en) * 2010-04-29 2012-11-13 Victory Gain Group Corporation Image sensing device having thin thickness
JP2012238687A (ja) * 2011-05-11 2012-12-06 Sony Corp 半導体パッケージ、半導体装置の製造方法、および固体撮像装置
KR101849223B1 (ko) * 2012-01-17 2018-04-17 삼성전자주식회사 반도체 패키지 및 그 제조 방법
CN104811589A (zh) * 2014-01-27 2015-07-29 南昌欧菲光电技术有限公司 便携式电子装置及其相机模组
US9602804B2 (en) * 2015-03-26 2017-03-21 Intel Corporation Methods of forming integrated package structures with low Z height 3D camera
KR102027522B1 (ko) * 2017-04-13 2019-10-01 (주)파트론 광학센서 패키지 및 그 제조 방법
EP3471391B1 (en) 2017-10-10 2020-08-12 Axis AB A camera

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2461152Y (zh) * 2000-12-11 2001-11-21 胜开科技股份有限公司 具透光片的封装影像感测晶片
CN1521819A (zh) * 2003-01-27 2004-08-18 ʤ���Ƽ��ɷ����޹�˾ 影像感测器制造方法
CN101290913A (zh) * 2007-04-17 2008-10-22 晶元光电股份有限公司 具有复合材料载体的电子元件组件
CN101436603A (zh) * 2007-11-14 2009-05-20 鸿富锦精密工业（深圳）有限公司 成像模组

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652375B1 (ko) * 2004-06-29 2006-12-01 삼성전자주식회사 와이어 본딩 패키지를 포함하는 이미지 센서 모듈 구조물및 그 제조방법
CN100531310C (zh) * 2006-01-14 2009-08-19 鸿富锦精密工业（深圳）有限公司 数码相机模组
JP4243810B2 (ja) * 2006-09-05 2009-03-25 ソニー株式会社 手ぶれ補正機構及び撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2461152Y (zh) * 2000-12-11 2001-11-21 胜开科技股份有限公司 具透光片的封装影像感测晶片
CN1521819A (zh) * 2003-01-27 2004-08-18 ʤ���Ƽ��ɷ����޹�˾ 影像感测器制造方法
CN101290913A (zh) * 2007-04-17 2008-10-22 晶元光电股份有限公司 具有复合材料载体的电子元件组件
CN101436603A (zh) * 2007-11-14 2009-05-20 鸿富锦精密工业（深圳）有限公司 成像模组

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378217A (zh) * 2012-04-24 2013-10-30 精材科技股份有限公司 光感装置及其制法
CN103378217B (zh) * 2012-04-24 2016-02-24 精材科技股份有限公司 光感装置及其制法
CN103426838A (zh) * 2012-05-18 2013-12-04 精材科技股份有限公司 晶片封装体及其形成方法
CN103426838B (zh) * 2012-05-18 2016-12-28 精材科技股份有限公司 晶片封装体及其形成方法
CN104811590A (zh) * 2014-01-27 2015-07-29 南昌欧菲光电技术有限公司 便携式电子装置及其相机模组
TWI608265B (zh) * 2016-07-13 2017-12-11 許志行 可攜式電子裝置及其影像擷取模組
CN107688268A (zh) * 2016-08-05 2018-02-13 赫克斯冈技术中心 照相机***
CN107688268B (zh) * 2016-08-05 2021-03-26 赫克斯冈技术中心 照相机***
US11289519B2 (en) 2017-01-30 2022-03-29 Sony Semiconductor Solutions Corporation Semiconductor device and electronic apparatus
CN110086963A (zh) * 2018-01-25 2019-08-02 台湾东电化股份有限公司 摄像***
CN110277322A (zh) * 2019-06-12 2019-09-24 德淮半导体有限公司 半导体器件及其封装方法

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