CN101923900B - 一种非易失存储器的擦除方法及装置 - Google Patents
一种非易失存储器的擦除方法及装置 Download PDFInfo
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CN101923900B true CN101923900B (zh) | 2014-06-11 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103426476B (zh) * | 2012-05-23 | 2016-03-02 | 旺宏电子股份有限公司 | 通过部分预编程来减少存储器擦除时间的方法与装置 |
CN106445407A (zh) * | 2016-08-17 | 2017-02-22 | 北京兆易创新科技股份有限公司 | 一种芯片处理方法及装置 |
KR20180039351A (ko) * | 2016-10-10 | 2018-04-18 | 에스케이하이닉스 주식회사 | 메모리 장치 및 메모리 장치의 동작 방법 |
CN109087676B (zh) * | 2017-06-14 | 2020-10-20 | 北京兆易创新科技股份有限公司 | 一种非易失性存储器的编程方法及装置 |
CN109542345B (zh) * | 2018-11-16 | 2022-02-08 | 广州锦红源电子科技有限公司 | Flash存储器的数据写入和读取方法、装置 |
CN112825261A (zh) * | 2019-11-20 | 2021-05-21 | 合肥格易集成电路有限公司 | 非易失性存储器的擦除方法和非易失性存储器 |
CN110970076B (zh) * | 2019-12-02 | 2022-03-18 | 武汉新芯集成电路制造有限公司 | 存储结构及其擦除方法 |
CN111240587A (zh) * | 2019-12-30 | 2020-06-05 | 深圳市芯天下技术有限公司 | 非易失存储器的擦除方法及装置 |
CN112083891B (zh) * | 2020-09-22 | 2022-12-06 | 深圳芯邦科技股份有限公司 | 一种存储器中数据块的检测方法及相关设备 |
CN117409843B (zh) * | 2023-12-14 | 2024-03-22 | 合肥康芯威存储技术有限公司 | 快闪存储器的质量分析方法、装置、电子设备及介质 |
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CN101023497A (zh) * | 2004-08-30 | 2007-08-22 | 斯班逊有限公司 | 非易失性存储装置以及用于该存储装置的擦除方法 |
CN101154457A (zh) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | 闪存器件及其中闪存单元块的擦除方法 |
CN101154456A (zh) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | 闪存器件及使用其的擦除方法 |
CN101176164A (zh) * | 2005-04-01 | 2008-05-07 | 桑迪士克股份有限公司 | 具有源极线偏置误差补偿的非易失性存储器及方法 |
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KR100463954B1 (ko) * | 2002-05-17 | 2004-12-30 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 그 소거 방법 |
US6967873B2 (en) * | 2003-10-02 | 2005-11-22 | Advanced Micro Devices, Inc. | Memory device and method using positive gate stress to recover overerased cell |
JP2008135100A (ja) * | 2006-11-28 | 2008-06-12 | Toshiba Corp | 半導体記憶装置及びそのデータ消去方法 |
US7633813B2 (en) * | 2007-01-23 | 2009-12-15 | Hynix Semiconductor Inc. | Method of performing an erase operation in a non-volatile memory device |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101023497A (zh) * | 2004-08-30 | 2007-08-22 | 斯班逊有限公司 | 非易失性存储装置以及用于该存储装置的擦除方法 |
CN101176164A (zh) * | 2005-04-01 | 2008-05-07 | 桑迪士克股份有限公司 | 具有源极线偏置误差补偿的非易失性存储器及方法 |
CN101154457A (zh) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | 闪存器件及其中闪存单元块的擦除方法 |
CN101154456A (zh) * | 2006-09-29 | 2008-04-02 | 海力士半导体有限公司 | 闪存器件及使用其的擦除方法 |
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