CN101910255B - 倍半硅氧烷树脂 - Google Patents
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Abstract
可用于抗反射涂层中的倍半硅氧烷树脂,其中该倍半硅氧烷树脂具有式(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3-x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q,其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1。
Description
相关申请的交互参考
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发明背景
随着半导体工业对较小特征尺寸的持续需求,最近已出现193mm光学平版印刷术作为制造低于100nm特征器件的技术。利用该较短波长的光需要底部抗反射涂层(BARC)以降低基板上的反射并通过吸收已穿过光刻胶的光来抑制光刻胶摆动固化。可商购的抗反射涂料(ARC)由有机和无机材料组成。通常而言,显示良好抗蚀性的无机ARC是CVD基并且易具有极端表面结构的所有综合缺点。有机ARC材料是通过旋压法施加并具有极佳填充和平坦化性能,但对有机光刻胶的蚀刻选择性较差。因此,强烈需要能提供无机和有机ARC材料组合优点的材料。
发明内容
本发明涉及可用于抗反射涂料中的倍半硅氧烷树脂,其中该倍半硅氧烷树脂具有下式:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1。当抗反射涂料中使用该树脂时,可在去除阶段剥离涂层。此外,对作为193nm ARC材料的所需固化性能和剥离能力,倍半硅氧烷树脂中必需存在氢原子基团。
本发明还涉及抗反射涂层(ARC)组合物,其包含:
(i)具有下式的倍半硅氧烷树脂:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1;和
(ii)溶剂。
本发明还涉及一种在电子器件上形成抗反射涂层的方法,其包括:
(A)将ARC组合物施加到电子器件上,该组合物包含:
(i)具有下式的倍半硅氧烷树脂:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1;和
(ii)溶剂,和
(B)去除溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。
发明详述
可用于形成抗反射涂层的倍半硅氧烷树脂具有下式:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1。通常,m值为0.02-0.7,或者0.05-0.15。通常,n值为0.05-0.90,或者0.10-0.30。通常,o值为0.05-0.90,或者0.25-0.75。通常,p值为0.02-0.20,或者0.05-0.5。通常,q值为0-0.25,或者0-0.15。
在该树脂中,R是含硫官能团。R可例举为具有通式HS(CH2)z-(其中z值为1-18)的巯烷基,具有通式R3S(CH2)z-、R3SS(CH2)z-和R3SSS(CH2)z-(其中R3是氢原子)的硫化物或多硫基化合物,C1-C4烷基如甲基、乙基或丙基,或芳基如苯基。R可进一步例举为巯丙基、巯乙基和巯甲基。
R′独立地为氢原子或具有1-4个碳原子的烃基。R′可进一步例举为H、甲基、乙基、丙基、异丙基和丁基。
R2选自酯基、聚醚基和聚氧化乙烯基。酯基可以是任何包含至少一个酯官能团的有机取代基。聚醚基是具有经由氧原子连接的烃基单元的有机取代基,可由下列结构表示(但不限于):-(CH2)a[O(CH2)b]cOR′,其中a=2-12;b=2-6;c=2-200;R′=H、烷基或其它有机基团。聚氧化乙烯基是具有至少一个重复单元-(CH2CH2O)t-的基团,其中t是选自0-50的数。此处适用的酯基的实例为-(CH2)2-O-C(O)Me和-(CH2)2-C(O)-OMe。此处适用的聚醚基的实例为-(CH2)3-(OCH2CH2)7-OMe、-(CH2)3-(OCH2CH2)7-OH和-(CH2)3-(OCH2CH2)7-OAc。此处适用的聚氧化乙烯基的实例为-(CH2)3-(OCH2CH2)t-OMe、-(CH2)3-(OCH2CH2)t-OC(O)Me和-(CH2)3-(OCH2CH2)t-OH。
制备倍半硅氧烷树脂的常用方法包括合适硅烷的水解和缩合。通过该方法,由于不完全水解或缩合,倍半硅氧烷树脂中可能保留残余的-OH和/或-OR′。如果倍半硅氧烷树脂中包含-OR′基团的单元总量超过40摩尔%,则树脂可能出现胶凝和不稳定。通常倍半硅氧烷树脂包含小于5摩尔%的含-OR′单元,或小于1摩尔%。
倍半硅氧烷树脂具有通过采用RI检测和聚苯乙烯标准物的凝胶渗透色谱法所测得在500-50,000范围内,或者在2500-25,000范围内,或者在4,000-20,0000范围内的重均分子量(Mw)。
倍半硅氧烷可通过本领域中已知的方法制得。例如,它们可使用授予Becker等人的美国专利第6,281285号和授予Bank等人的美国专利第5,010,159号中提出的方法,通过三氯硅烷的水解和缩合制得。或者,倍半硅氧烷树脂可通过烷氧基硅烷的水解和缩合制得。
通常,在溶剂的存在下制备倍半硅氧烷树脂。任何合适的不含可参与水解和/或缩合反应的官能团的有机或硅氧烷溶剂均可用于制备倍半硅氧烷树脂。溶剂一般是以基于溶剂和硅烷反应物总重的40-98重量%,或者70-90重量%的量使用。该反应可以双相或单相体系进行。
适用的有机溶剂可例示但不限于饱和脂族烃如正戊烷、己烷、正庚烷和异辛烷;环脂族烃如环戊烷和环己烷;芳族烃如苯、甲苯、二甲苯、均三甲苯;醚如四氢呋喃、二噁烷、乙二醇二***、乙二醇二甲醚;酮如甲基异丁基酮(MIBK)和环己酮;卤素取代的烷烃如三氯乙烷;卤化芳族烃如溴苯和氯苯;酯如丙二醇单甲醚乙酸酯(PGMEA)、异丁酸异丁酯和丙酸丙酯。适用的硅氧烷溶剂可例示但不限于环状硅氧烷如八甲基环四硅氧烷和十甲基环五硅氧烷。可使用单一溶剂或使用溶剂混合物。
制备倍半硅氧烷树脂的反应可在任何温度下进行,只要其不引起明显胶凝或引起倍半硅氧烷树脂固化即可。通常,反应在5-150℃范围内(建议在50-100℃范围内)的温度下进行。
形成倍半硅氧烷树脂的时间取决于许多因素如温度、硅烷反应物的类型和用量以及催化剂用量(如果存在)。反应时间通常从几分钟至几小时。本领域技术人员将能容易确定完成反应的所需时间。可用于加速反应的催化剂包括但不限于硝酸、硫酸、盐酸及其它。
完成反应后,可任选去除催化剂。去除催化剂的方法是本领域所熟知的并且包括中和、汽提或水洗或其组合。催化剂可能对硅氧烷树脂的储存寿命(是在溶液中时)有负面影响,因此建议将其除去。
在制备倍半硅氧烷树脂的方法中,完成反应后,在降低压力下可将挥发成分从倍半硅氧烷树脂溶液中去除。这种挥发成分包括醇副产物、过量水、催化剂、盐酸(氯硅烷路线)和溶剂。去除挥发成分的方法在本领域中是已知的并且包括例如蒸馏。
制备倍半硅氧烷树脂的反应后,可进行多个任选步骤以获得所需形式的倍半硅氧烷树脂。例如,倍半硅氧烷树脂可通过去除溶剂以固体形式回收。溶剂去除的方法并不重要并且许多方法是本领域熟知的(例如,加热和/或真空蒸馏)。一旦以固体形式回收倍半硅氧烷树脂,则可任选将树脂重新溶解在相同或另一溶剂中以供特定用途。或者,如果最终产品需要不同溶剂(不同于反应中所用的溶剂),则可通过添加第二溶剂和例如通过蒸馏去除第一溶剂而完成溶剂交换。此外,溶剂中树脂浓度可通过去除一些溶剂或添加附加量的溶剂进行调整。
本发明还涉及抗反射涂层(ARC)组合物,其包含:
(i)具有下式的倍半硅氧烷树脂:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1;和
(ii)溶剂。
适用的溶剂(ii)尤其包括但不限于1-甲氧基-2-丙醇、丙二醇单甲基乙基乙酸酯和环己酮。ARC组合物通常包含基于ARC组合物总重的约10wt%-约99.9wt%,或者80-95wt%的溶剂。
ARC组合物可包含自由基引发剂或其它添加剂。适合的自由基引发剂包括过氧化物和光引发剂如过氧化苯甲酰、过氧化二异丙苯、偶氮双异丁腈(AIBN)及其它。自由基引发剂通常是以基于ARC组合物总重的至多1000ppm,或者10-500ppm的量存在。其它添加剂可包括但不限于光酸和热酸产生剂、光碱和热碱产生剂。
抗反射涂层组合物是通过将倍半硅氧烷树脂、溶剂和任选自由基引发剂或其它添加剂一起混合而形成。通常就在使用之前将自由基引发剂和其它添加剂加入涂层组合物中以防止过早固化。
将抗反射涂层组合物施加到电子器件上以产生涂布的基板。去除溶剂并固化倍半硅氧烷树脂以在电子器件上产生抗反射涂层。
电子器件通常为半导体器件,如欲用于制备半导体组件的硅基器件和砷化镓基器件。通常,器件包含至少一个半导电层和多个其它包含各种传导、半导或绝缘材料的层。
向电子器件施加ARC组合物的具体方法包括但不限于旋涂、浸涂、喷涂、淋涂、丝网印刷和其它方法。优选的施加方法是旋涂。通常涂布包括在约2000RPM下旋转电子器件并将ARC组合物添加到旋转电子器件表面上。
去除溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。固化一般包括将涂层加热到足够温度达足够时间以引起固化。当发生足够交联以致倍半硅氧烷树脂基本不溶于施加它的溶剂时,发生固化。例如,通过在80-450℃下加热涂布的电子器件0.1-60分钟、或者在150-275℃下0.5-5分钟、或者在200-250℃下0.5-2分钟进行固化。在固化步骤期间可使用任何加热方法。例如,可将涂布的电子器件放置在石英管炉、对流烘箱中或使其置于热板上。或者,抗反射涂层可在光活性添加剂如光-酸产生剂(PAG)或光碱产生剂的存在下经紫外线照射而固化。
为防止固化期间涂布的组合物中的倍半硅氧烷树脂与氧或碳反应,固化步骤可在惰性气氛下进行。在此适用的惰性气氛包括但不限于氮气和氩气。“惰性”是指环境包含小于50ppm,优选小于10ppm的氧气。进行固化和去除步骤的压力并不重要。固化步骤通常在大气压力下进行,但也可在低于或高于大气压的压力下进行。
一旦固化,则包含抗反射涂层的电子器件可用于进一步基板加工步骤如光刻法中。当用于光刻法中时,在抗反射涂层上形成抗蚀剂图像。形成抗蚀剂图像的方法包括(a)在抗反射涂层顶部形成抗蚀剂组合物的膜;(b)使抗蚀剂膜图像化地暴露在辐射中以制备曝光的膜;和(c)使曝光的膜显影,产生图像。电子器件上的抗反射涂层尤其适合与图象化地暴露在波长为157nm-365nm的紫外线辐射或者波长为157nm-193nm的紫外线辐射中的抗蚀剂组合物一起使用。抗蚀剂膜中一旦产生图像,则图案就被蚀刻在抗反射涂层中。可利用已知蚀刻材料去除抗反射涂层。可利用附加步骤或去除抗蚀剂膜和保留抗反射涂层以制备具有所需结构的器件。
ARC涂层组合物可在较低温度下固化并且它们产生可通过剥离溶液去除的涂层。已发现,本文制备的抗反射涂层具有较好溶剂(例如PGMEA)和TMAH抗性。
包括下列实施例以说明本发明的实施方案。本领域技术人员应当理解,依照本发明人所公开的代表技术的实例中所公开的技术可在本发明的实施例中发挥作用,因此被认为组成其优选实践模式。然而鉴于本发明,本领域技术人员应当理解,在不脱离本发明精神和范围的情况下,在所公开的具体实施方案中可做出很多改变并且仍获得相似或类似结果。
实施例
包括下列实施例以说明本发明的实施方案。本领域技术人员应当理解,依照本发明人所公开的代表技术的实例中所公开的技术可在本发明的实施例中发挥作用,因此被认为组成其优选实践模式。然而鉴于本发明,本领域技术人员应当理解,在不脱离本发明精神和范围的情况下,在所公开的具体实施方案中可做出很多改变并且仍获得相似或类似结果。所有百分比是wt%。
实施例1-12
反应物的用量列在表1中。在氮气下,将PGMEA、苯基三氯硅烷(硅烷1)、三氯硅烷(硅烷2)、甲基三氯硅烷(硅烷3)和2-(甲酯基)乙基三氯硅烷(硅烷4)以及巯丙基三甲氧基硅烷(硅烷5)的混合物加入反应器中。在90分钟内,将PGMEA和水的溶液加入三氯硅烷溶液中。使反应稠化并在20℃下再搅拌1小时。将所得反应产物经水或水/乙酸乙酯洗涤并分离。然后向树脂溶液中加入乙醇并将溶液汽提至约22wt%。然后向溶液中加入冷的正己烷并收集底层。加入额外PGMEA并将溶液汽提至在PGMEA中<10wt%固体。将该溶液用附加PGMEA稀释至10wt%。将溶液通过0.20微米PTFE过滤器过滤。制得通式为T(H)T(Me)T(Ph)T(R2)T(R)的树脂。结果列于表2中。试验4/5以一次试验形式进行并使产物分馏以获得两种不同Mw的树脂。
表1:反应物的用量(克)
试验 | PGMEA | PhSiCl3 | HSiCl3 | MeSiCl3 | 硅烷4 | 硅烷5 | 水 |
1 | 1400 | 17.5 | 29.8 | 106.9 | 0.0 | 16.2 | 44.0 |
2 | 1463 | 17.5 | 29.8 | 98.7 | 0.0 | 27.0 | 44.0 |
3 | 1527 | 17.5 | 29.8 | 90.4 | 0.0 | 37.8 | 44.0 |
4/5 | 1545 | 17.5 | 29.8 | 90.4 | 18.3 | 21.6 | 44.0 |
6 | 1545 | 17.5 | 29.8 | 90.4 | 18.3 | 21.6 | 44.0 |
7 | 1672 | 17.5 | 29.8 | 74.0 | 18.3 | 43.2 | 44.0 |
8 | 1800 | 17.5 | 29.8 | 57.5 | 18.3 | 64.8 | 44.0 |
9 | 1250 | 17.5 | 29.8 | 90.4 | 18.3 | 21.6 | 44.0 |
10 | 1402 | 23.8 | 40.6 | 123.3 | 0.0 | 51.5 | 60.0 |
11 | 1463 | 23.8 | 40.6 | 112.1 | 0.0 | 66.3 | 60.0 |
12 | 1402 | 23.8 | 40.6 | 123.3 | 0.0 | 51.5 | 60.0 |
表2
试验 | T(H) | T(Me) | T(Ph) | T(R2) | T(R) | Mn | Mw | n193 | k193 | 溶剂损失PGMEA* | 溶剂损失TMAH* | 水角度 | 表面能 |
1 | 20% | 65% | 7.5% | 0 | 7.5% | 4780 | 11800 | 1.678 | 0.155 | 175 | 21 | 89.33 | 27.4 |
2 | 20% | 60% | 7.5% | 0 | 12.5% | 3750 | 8690 | 1.69 | 0.169 | 373 | 34 | 88.67 | 26.2 |
3 | 20% | 55% | 7.5% | 0 | 17.5% | 3270 | 7260 | 1.704 | 0.176 | 454 | 46 | 88.67 | 28.1 |
4 | 20% | 55% | 7.5% | 7.5% | 10% | 3700 | 8160 | 1.68 | 0.153 | 11 | 28 | ||
5 | 20% | 55% | 7.5% | 7.5% | 10% | 2290 | 4130 | 1.687 | 0.166 | 58 | 17 | 85.00 | 30.1 |
6 | 20% | 55% | 7.5% | 7.5% | 10% | 3350 | 7520 | 1.681 | 0.155 | 34 | 31 | 84.17 | 30.4 |
7 | 20% | 45% | 7.5% | 7.5% | 20% | 2310 | 4720 | 1.701 | 0.164 | 64 | 69 | 83.00 | 31.0 |
8 | 20% | 35% | 7.5% | 7.5% | 30% | 1970 | 3660 | 1.723 | 0.168 | 109 | 160 | 81.83 | 31.5 |
9 | 20% | 55% | 7.5% | 7.5% | 10% | 4820 | 11500 | 1.680 | 0.153 | 20 | 33 | 88.67 | 30.1 |
10 | 20% | 55% | 7.5% | 0 | 17.5% | 6460 | 16100 | 1.689 | 0.164 | 109 | 24 | 88.17 | 27.1 |
11 | 20% | 50% | 7.5% | 0 | 22.5% | 4680 | 10700 | 1.712 | 0.171 | 466 | 64 | 90.33 | 26.0 |
12 | 20% | 55% | 7.5% | 0 | 17.5% | 6080 | 15200 | 1.724 | 0.192 | 284 | 29 | 90.00 | 26.1 |
R2=-CH2CH2C(O)OMe
R=-CH2CH2CH2SH
Claims (24)
1.一种具有下式的倍半硅氧烷树脂:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自合硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1。
2.权利要求1的倍半硅氧烷树脂,其中m值为0.02-0.7,n值为0.05-0.90,o值为0.05-0.90,p值为0.02-0.20和q值为0-0.25。
3.权利要求1的倍半硅氧烷树脂,其中R是式HS(CH2)z-的巯烷基,其中z值为1-18。
4.权利要求1的倍半硅氧烷树脂,其中R是式R3SS(CH2)z-和R3SSS(CH2)z-的多硫基,其中R3是氢原子、C1-C4烷基、或芳基,和z为1-18。
5.权利要求1的倍半硅氧烷树脂,其中R是巯丙基。
6.权利要求1的倍半硅氧烷树脂,其中R2是-(CH2)2-C(O)-OMe。
7.权利要求1的倍半硅氧烷树脂,其中该树脂具有在500-50,000范围内的重均分子量。
8.一种抗反射涂层组合物,其包含:
(i)具有下式的倍半硅氧烷树脂:
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q,
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1;和
(ii)溶剂。
9.权利要求8的抗反射涂层组合物,其中m值为0.02-0.7,n值为0.05-0.90,o值为0.05-0.90,p值为0.02-0.20和q值为0-0.25。
10.权利要求8的抗发射涂层组合物,其中R是式HS(CH2)z-的巯烷基,其中z值为1-18。
11.权利要求8的抗发射涂层组合物,其中R是式R3SS(CH2)z-和R3SSS(CH2)z-的多硫基,其中R3是氢原子、C1-C4烷基、或芳基,和z为1-18。
12.权利要求8的抗发射涂层组合物,其中R是巯丙基。
13.权利要求8的抗发射涂层组合物,其中R2是-(CH2)2-C(O)-OMe。
14.权利要求8的抗发射涂层组合物,其中该树脂具有在500-50,000范围内的重均分子量。
15.权利要求8的抗发射涂层组合物,其中溶剂选自1-甲氧基-2-丙醇、丙二醇单甲基乙基乙酸酯和环己酮。
16.权利要求8的抗发射涂层组合物,其中该组合物另外包含自由基引发剂。
17.一种在电子器件上形成抗反射涂层的方法,其包含:
(A)将抗反射涂层组合物施加到电子器件上,该组合物包含
(i)具有下式的倍半硅氧烷树脂
(PhSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n(MeSiO(3-x)/2(OR′)x)o(RSiO(3- x)/2(OR′)x)p(R2SiO(3-x)/2(OR′)x)q
其中Ph是苯基;Me是甲基;R选自含硫有机官能团;R′是氢原子或具有1-4个碳原子的烃基;R2选自酯基、聚醚基和聚氧化乙烯基;x值为0、1或2;m值为0.01-0.97;n值为0.01-0.97;o值为0.01-0.97;p值为0.01-0.97;q值为0-0.96;且m+n+o+p+q≈1;和
(ii)溶剂,和
(B)去除溶剂并固化倍半硅氧烷树脂以在电子器件上形成抗反射涂层。
18.权利要求17的方法,其中R是巯丙基。
19.权利要求17的方法,其中R2是-(CH2)2-C(O)-OMe。
20.权利要求17的方法,其中溶剂选自1-甲氧基-2-丙醇、丙二醇单甲基乙基乙酸酯和环己酮。
21.权利要求17的方法,其中该组合物另外包含自由基引发剂。
22.权利要求17的方法,其中通过旋涂、浸涂、喷涂、淋涂或丝网印刷施加ARC组合物。
23.权利要求17的方法,其中通过在80-450℃下加热0.1-60分钟固化倍半硅氧烷树脂。
24.权利要求23的方法,其中在惰性气氛中加热倍半硅氧烷树脂。
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- 2008-12-05 CN CN200880124283.3A patent/CN101910255B/zh not_active Expired - Fee Related
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- 2008-12-05 JP JP2010542226A patent/JP5587791B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
TWI460232B (zh) | 2014-11-11 |
WO2009088600A1 (en) | 2009-07-16 |
US20120027917A1 (en) | 2012-02-02 |
EP2240534A4 (en) | 2011-11-16 |
US8318258B2 (en) | 2012-11-27 |
JP5587791B2 (ja) | 2014-09-10 |
JP2011509333A (ja) | 2011-03-24 |
EP2240534B1 (en) | 2013-01-23 |
CN101910255A (zh) | 2010-12-08 |
KR20100126295A (ko) | 2010-12-01 |
EP2240534A1 (en) | 2010-10-20 |
TW200938591A (en) | 2009-09-16 |
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