CN109378356A - A kind of preparation method of IBC solar battery - Google Patents
A kind of preparation method of IBC solar battery Download PDFInfo
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- CN109378356A CN109378356A CN201811026316.2A CN201811026316A CN109378356A CN 109378356 A CN109378356 A CN 109378356A CN 201811026316 A CN201811026316 A CN 201811026316A CN 109378356 A CN109378356 A CN 109378356A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 239000000243 solution Substances 0.000 claims abstract description 16
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 206010003830 Automatism Diseases 0.000 claims abstract description 8
- 235000008216 herbs Nutrition 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 210000002268 wool Anatomy 0.000 claims abstract description 8
- 230000008021 deposition Effects 0.000 claims abstract description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of preparation methods of IBC solar battery, by on P+ emission layer deposition mask layer, carry out laser slotting to the mask layer, N-type silicon chip carried out using the first solution making herbs into wool cleaning and to corrode P+ emission layer, since first solution does not corrode the mask layer, the P+ emission layer be corroded region width be greater than mask layer laser slotting width, thus there are gaps between the N+ back surface field formed in subsequent ion injection process and P+ emission layer, with automatism isolation.By automatism isolation between N+ back surface field and P+ emission layer, thus the area P of IBC cell backside heavy doping and the area N can be eliminated and form tunnel knot and generate electric leakage and influence battery efficiency.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing more particularly to a kind of preparation methods of IBC solar battery.
Background technique
IBC (Interdigitated Back Contact refers to and intersects back contacts) battery, refers to that battery front side is electrodeless,
The positive and negative electrode metal grid lines of battery are in finger-like cross arrangement in cell backside.The Sunpower company in the U.S. is first rule of the whole world
Modelling produces the producer of IBC battery, and for the transfer efficiency of volume production more than 23%, laboratory peak efficiency is more than 25%.IBC electricity
Pond is due to the direction that its potential high efficiency is the extensive industrialization of next-generation crystal silicon solar battery.
In IBC solar battery, tunnel knot refers to the PN junction that the area P of heavy doping and the area N are formed.IBC cell backside
The concentration and position that the area P and the area N of intersection construction need precision controlling to adulterate, if technique alignment precision is lower to be easy to cause N
Area and the area P doped region are overlapped, and electric leakage caused by the tunnel knot that overlapping region is formed can reduce photoelectric conversion efficiency；Conventional
IBC battery manufacturing process needs special technique that the region N+/P+ at the back side is isolated.
Summary of the invention
The invention proposes more particularly to a kind of preparation method of IBC solar battery, with the N+/P+ easily to the back side
Region is isolated.
To solve the above-mentioned problems, the invention provides the following technical scheme:
A kind of preparation method of IBC solar battery, comprising the following steps:
S1: damage cleaning and surface polishing treatment are carried out to N-type silicon chip；
S2: carrying out phosphorus diffusion to the back side of treated N-type silicon chip, forms P+ emission layer at the back side of N-type silicon chip；
S3: in the surface deposition mask layer of the P+ emission layer；
S4: laser slotting, predefined back surface field area are carried out to the mask layer；
S5: carrying out making herbs into wool cleaning to N-type silicon chip using the first solution, in the front formation flannelette of the N-type silicon chip, and with
Mask layer after fluting is mask corrosion P+ emission layer；And first solution does not corrode the mask layer, the P+ emission layer
Be corroded region width be greater than mask layer laser slotting width；
S6: carry out ion implanting, the N-type silicon chip front formed front-surface field, the back side of the N-type silicon chip with
Mask layer after fluting is that exposure mask forms N+ back surface field, and there are gaps between the N+ back surface field and P+ emission layer, with automatism isolation；
S7: removal mask layer；
S8: passivation layer and antireflection layer are formed on the surface of N-type silicon chip；
S9: metal electrode is prepared in the N+ back surface field at the N-type silicon chip back side and P+ emission layer.
In one embodiment of the invention, the mask layer is the laminated construction of SiNx or SO2 and SiNx.
In one embodiment of the invention, first solution is alkaline solution.
In one embodiment of the invention, alkaline solution is the potassium hydroxide or sodium hydroxide that mass percent is 5%
Solution, reaction temperature are 75-85 DEG C.
In one embodiment of the invention, the height of the flannelette is 5um.
In one embodiment of the invention, the mask layer with a thickness of 40-100nm.
In one embodiment of the invention, the width in the gap between the N+ back surface field and P+ emission layer is 3-6um.
In one embodiment of the invention, the step S7 is specially that 9%HF cleaning 3-8min is selected to remove mask layer.
The present invention due to using the technology described above, is allowed to compared with prior art, have the advantages that following and actively imitate
Fruit:
(1) present invention by P+ emission layer deposition mask layer, to the mask layer carry out laser slotting, using first
Solution carries out making herbs into wool cleaning to N-type silicon chip and corrodes P+ emission layer, described since first solution does not corrode the mask layer
The be corroded width in region of P+ emission layer is greater than the width of mask layer laser slotting, thus is formed in subsequent ion injection process
N+ back surface field and P+ emission layer between there are gaps, with automatism isolation.By automatism isolation between N+ back surface field and P+ emission layer, thus
The area P and the area N that IBC cell backside heavy doping can be eliminated form tunnel knot and generate electric leakage and influence battery efficiency.
Detailed description of the invention
Fig. 1 is the flow diagram of the preparation method of IBC solar battery provided in an embodiment of the present invention.
Fig. 2A-Fig. 2 D is the corresponding device of each step of preparation method of IBC solar battery provided in an embodiment of the present invention.
Specific embodiment
Make below in conjunction with preparation method of the drawings and specific embodiments to IBC solar battery proposed by the present invention further
It is described in detail.According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing
It is all made of very simplified form and uses non-accurate ratio, only to convenient, lucidly the aid illustration present invention is implemented
The purpose of example.
Fig. 1 and Fig. 2A-Fig. 2 D is please referred to, as shown in Fig. 1 and Fig. 2A-Fig. 2 D, IBC provided in an embodiment of the present invention is too
It is positive can battery preparation method the following steps are included:
S1: damage cleaning and surface polishing treatment are carried out to N-type silicon chip 1.
Wherein, the resistivity value 5-10 Ω cm of N-type silicon chip 1.The method that chemical attack can be used carries out surface to silicon wafer
Damage removal and surface polishing treatment, corrosion depth 2-5um.
S2: carrying out phosphorus diffusion to the back side of treated N-type silicon chip 1, forms P+ emission layer 2 at the back side of N-type silicon chip 1.
Wherein, the square resistance of P+ emission layer 2 is 40-100 Ω/.
S3: in the surface deposition mask layer 3 of the P+ emission layer 2.
Specifically, using plasma reinforced chemical vapour deposition method P+ emission layer 2 surface deposition mask layer.Wherein,
Mask layer 3 can use SiNx or SiO2 and SiNx laminated construction, with a thickness of 40-100nm.
S4: laser slotting, predefined back surface field area are carried out to the mask layer 3；Device junction composition after the completion of the step
As shown in Figure 2 A, wherein label 4 represents the fluting formed.
S5: carrying out making herbs into wool cleaning to N-type silicon chip 1 using the first solution, forms flannelette in the front of the N-type silicon chip 1, and
Using the mask layer after slotting as mask corrosion P+ emission layer；And first solution does not corrode the mask layer, the P+ transmitting
Layer be corroded region 5 width be greater than mask layer laser slotting 4 width；Device junction composition such as Fig. 2 B institute after the completion of the step
Show.
Specifically, selecting in the potassium hydroxide or sodium hydroxide solution that mass fraction is 5%, the item that temperature is 75-85 DEG C
Making herbs into wool cleaning is carried out under part, forms surface-texturing, and wherein the height of making herbs into wool is 5um.In the same of making herbs into wool removal damage from laser layer
When corrosion 4-5um is carried out without the P+ emission layer that exposure mask is protected to the back side, the width of the corrosion area can be than the width of laser windowing
Wide 5-10um.
S6: ion implanting is carried out, as shown in Figure 2 C, wherein label 6 represents ion implanting；In the front of the N-type silicon chip 1
Front-surface field is formed, forms N+ back surface field 7, the N+ back surface field by exposure mask of the mask layer after slotting at the back side of the N-type silicon chip 1
There are gaps between 7 and P+ emission layer 2, with automatism isolation, as shown in Figure 2 D.
Wherein, the ion implantation energy of back surface field is 10-15keV, and injection metering is 5 × 1015~1 × 1016/cm2；
The ion implantation energy of front-surface field is 5-10keV, and injection metering is 5 × 1014~1 × 1015/cm2.Due to SiNx exposure mask
Protection causes backside particulate injection width to be less than local corrosion width, and the width difference in two regions is used to form automatism isolation area
Domain.
The width in the gap between the N+ back surface field and P+ emission layer is 3-6um.
Also, it needs to anneal after ion implanting, annealing temperature is 900-950 degree, the sheet resistance of back surface field after annealing
For 30-60 Ω/；The sheet resistance of front-surface field is 150-300 Ω/.
S7: removal mask layer.Specifically, 9%HF cleaning 3-8min is selected to remove mask layer.
S8: passivation layer and antireflection layer are formed on the surface of N-type silicon chip.
Wherein, passivation and antireflection layer can be SiO2 and SiNx.
S9: metal electrode is prepared in the N+ back surface field at the N-type silicon chip back side and P+ emission layer.
Specifically, the N+ back surface field and P+ using silk screen print method in silicon chip back side carry on the back tie region printing metal gate line, utilize
Metal grid lines are formed ohm line by sintering process.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (7)
1. a kind of preparation method of IBC solar battery, which comprises the following steps:
S1: damage cleaning and surface polishing treatment are carried out to N-type silicon chip；
S2: carrying out phosphorus diffusion to the back side of treated N-type silicon chip, forms P+ emission layer at the back side of N-type silicon chip；
S3: in the surface deposition mask layer of the P+ emission layer；
S4: laser slotting, predefined back surface field area are carried out to the mask layer；
S5: carrying out making herbs into wool cleaning to N-type silicon chip using the first solution, forms flannelette in the front of the N-type silicon chip, and with fluting
Mask layer afterwards is mask corrosion P+ emission layer；And first solution does not corrode the mask layer, the P+ emission layer is rotten
The width for losing region is greater than the width of mask layer laser slotting；
S6: carrying out ion implanting, front-surface field is formed in the front of the N-type silicon chip, at the back side of the N-type silicon chip to slot
Mask layer afterwards is that exposure mask forms N+ back surface field, and there are gaps between the N+ back surface field and P+ emission layer, with automatism isolation；
S7: removal mask layer；
S8: passivation layer and antireflection layer are formed on the surface of N-type silicon chip；
S9: metal electrode is prepared in the N+ back surface field at the N-type silicon chip back side and P+ emission layer.
2. the preparation method of IBC solar battery as described in claim 1, which is characterized in that the mask layer be SiNx or
The laminated construction of person S02 and SiNx.
3. the preparation method of IBC solar battery as claimed in claim 2, which is characterized in that first solution is alkalinity
Solution.
4. the preparation method of IBC solar battery as claimed in claim 3, which is characterized in that alkaline solution is quality percentage
Than the potassium hydroxide or sodium hydroxide solution for 5%, reaction temperature is 75-85 DEG C.
5. the preparation method of IBC solar battery as described in claim 3 or 4, which is characterized in that the height of the flannelette is
5um。
6. the preparation method of IBC solar battery as described in claim 1, which is characterized in that the N+ back surface field and P+ emit
The width in the gap between layer is 3-6um.
7. the preparation method of IBC solar battery as described in claim 1, which is characterized in that the step S7 is specially to select
3-8min removal mask layer is cleaned with 9%HF.
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| CN201811026316.2A CN109378356A (en) | 2018-09-04 | 2018-09-04 | A kind of preparation method of IBC solar battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111816731A (en) * | 2020-07-10 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Method for manufacturing HBC battery back doped amorphous silicon |
| CN112054085A (en) * | 2019-06-06 | 2020-12-08 | 国家电投集团西安太阳能电力有限公司 | Efficient IBC battery structure and preparation method thereof |
| CN112864275A (en) * | 2020-12-31 | 2021-05-28 | 晶澳太阳能有限公司 | Preparation method of IBC (intermediate bulk charge) cell, IBC cell and solar cell module |
| CN113871494A (en) * | 2020-06-30 | 2021-12-31 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
| CN105489696A (en) * | 2014-09-18 | 2016-04-13 | 上海神舟新能源发展有限公司 | Method for producing all-back-contact high efficiency crystalline silicon cell |
-
2018
- 2018-09-04 CN CN201811026316.2A patent/CN109378356A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN104218123A (en) * | 2014-09-05 | 2014-12-17 | 奥特斯维能源（太仓）有限公司 | N-type IBC silicon solar cell manufacturing method based on ion implantation process |
| CN105489696A (en) * | 2014-09-18 | 2016-04-13 | 上海神舟新能源发展有限公司 | Method for producing all-back-contact high efficiency crystalline silicon cell |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054085A (en) * | 2019-06-06 | 2020-12-08 | 国家电投集团西安太阳能电力有限公司 | Efficient IBC battery structure and preparation method thereof |
| CN113871494A (en) * | 2020-06-30 | 2021-12-31 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113871494B (en) * | 2020-06-30 | 2024-03-15 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN111816731A (en) * | 2020-07-10 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Method for manufacturing HBC battery back doped amorphous silicon |
| WO2022007532A1 (en) * | 2020-07-10 | 2022-01-13 | 普乐新能源科技(徐州)有限公司 | Method for making doped amorphous silicon on back side of hbc cell |
| CN111816731B (en) * | 2020-07-10 | 2022-03-29 | 普乐新能源科技(徐州)有限公司 | Method for manufacturing HBC battery back doped amorphous silicon |
| CN112864275A (en) * | 2020-12-31 | 2021-05-28 | 晶澳太阳能有限公司 | Preparation method of IBC (intermediate bulk charge) cell, IBC cell and solar cell module |
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Effective date of registration: 20191024 Address after: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant after: Xi'an Electric Power Co., Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co., Ltd Applicant after: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant after: Qinghai Huanghe Hydropower Development Co. Ltd. Address before: 710100 East Chang'an Avenue, Xi'an, Shaanxi Aerospace base, No. 589 Applicant before: Xi'an Electric Power Co., Ltd. Applicant before: State power investment group Xi'an Solar Power Co., Ltd. Xining branch Applicant before: State Electricity Investment Group the Yellow River Upstream Hydropower Development Co., Ltd. Applicant before: Qinghai Huanghe Hydropower Development Co. Ltd. |
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