CN101847441A - 非易失性半导体存储装置 - Google Patents
非易失性半导体存储装置 Download PDFInfo
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- CN101847441A CN101847441A CN201010135739A CN201010135739A CN101847441A CN 101847441 A CN101847441 A CN 101847441A CN 201010135739 A CN201010135739 A CN 201010135739A CN 201010135739 A CN201010135739 A CN 201010135739A CN 101847441 A CN101847441 A CN 101847441A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0064—Verifying circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0085—Write a page or sector of information simultaneously, e.g. a complete row or word line
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP070862/2009 | 2009-03-23 | ||
JP2009070862A JP5039079B2 (ja) | 2009-03-23 | 2009-03-23 | 不揮発性半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101847441A true CN101847441A (zh) | 2010-09-29 |
CN101847441B CN101847441B (zh) | 2013-04-17 |
Family
ID=42737456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010135739.5A Active CN101847441B (zh) | 2009-03-23 | 2010-03-10 | 非易失性半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8339833B2 (zh) |
JP (1) | JP5039079B2 (zh) |
KR (1) | KR101196186B1 (zh) |
CN (1) | CN101847441B (zh) |
TW (1) | TWI455134B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108766495A (zh) * | 2012-08-21 | 2018-11-06 | 群联电子股份有限公司 | 数据写入方法、存储器控制器与存储器存储装置 |
CN109219850A (zh) * | 2016-04-28 | 2019-01-15 | 艾沃思宾技术公司 | 存储器中的延迟回写 |
CN111312308A (zh) * | 2018-12-11 | 2020-06-19 | 爱思开海力士有限公司 | 半导体器件和包括其的半导体*** |
CN112802518A (zh) * | 2021-03-25 | 2021-05-14 | 深圳市汇顶科技股份有限公司 | 数据写入方法、片上***芯片及计算机可读存储介质 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8541843B2 (en) * | 2008-08-14 | 2013-09-24 | Nantero Inc. | Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same |
TWI543177B (zh) | 2010-08-19 | 2016-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其檢驗方法與其驅動方法 |
JP5694053B2 (ja) | 2011-05-26 | 2015-04-01 | 株式会社東芝 | 半導体記憶装置 |
KR101938210B1 (ko) | 2012-04-18 | 2019-01-15 | 삼성전자주식회사 | 낸드 플래시 메모리, 가변 저항 메모리 및 컨트롤러를 포함하는 메모리 시스템의 동작 방법 |
KR102154296B1 (ko) | 2012-12-18 | 2020-09-14 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치의 구동 방법 및 비휘발성 메모리 장치 |
US9472277B2 (en) | 2013-10-29 | 2016-10-18 | Kabushiki Kaisha Toshiba | Non-volatile memory device |
KR102181210B1 (ko) * | 2014-01-10 | 2020-11-23 | 삼성전자주식회사 | 저장 장치의 데이터 처리 방법 및 저장 장치 |
KR102140787B1 (ko) * | 2014-07-07 | 2020-08-03 | 삼성전자주식회사 | 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법 |
JP6402072B2 (ja) | 2015-06-24 | 2018-10-10 | ルネサスエレクトロニクス株式会社 | 半導体不揮発性記憶装置及びその動作プログラム |
US9659649B2 (en) | 2015-09-08 | 2017-05-23 | Kabushiki Kaisha Toshiba | Semiconductor storage device and driving method thereof |
JP6457364B2 (ja) * | 2015-09-11 | 2019-01-23 | 東芝メモリ株式会社 | メモリシステム |
US9544864B1 (en) * | 2016-03-07 | 2017-01-10 | Panasonic Liquid Crystal Display Co., Ltd. | Data transmission system and receiving device |
WO2017191706A1 (ja) * | 2016-05-02 | 2017-11-09 | ソニー株式会社 | メモリ制御回路、メモリ、記憶装置、および、情報処理システム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1542856A (zh) * | 2003-02-21 | 2004-11-03 | 松下电器产业株式会社 | 非易失性半导体存储器件及其记录方法 |
US7251160B2 (en) * | 2005-03-16 | 2007-07-31 | Sandisk Corporation | Non-volatile memory and method with power-saving read and program-verify operations |
CN101086897A (zh) * | 2006-06-07 | 2007-12-12 | 意法半导体股份有限公司 | 非易失存储器设备 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0589687A (ja) * | 1991-09-27 | 1993-04-09 | Nec Corp | 不揮発性半導体記憶装置 |
JP2001084777A (ja) * | 1999-09-09 | 2001-03-30 | Hitachi Ltd | 半導体記憶装置 |
JP4250325B2 (ja) * | 2000-11-01 | 2009-04-08 | 株式会社東芝 | 半導体記憶装置 |
JP4774613B2 (ja) * | 2001-03-19 | 2011-09-14 | ソニー株式会社 | 不揮発性半導体記憶装置とそのプログラム方法 |
KR100642186B1 (ko) * | 2002-04-04 | 2006-11-10 | 가부시끼가이샤 도시바 | 상-변화 메모리 디바이스 |
JP4170682B2 (ja) * | 2002-06-18 | 2008-10-22 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
JP4063615B2 (ja) * | 2002-08-30 | 2008-03-19 | Necエレクトロニクス株式会社 | 不揮発性メモリおよびその書き込み処理方法 |
JP4422584B2 (ja) * | 2004-09-10 | 2010-02-24 | シャープ株式会社 | 半導体記憶装置 |
EP1966802A2 (en) * | 2005-12-29 | 2008-09-10 | SanDisk Corporation | Methods and device for improved program-verify operations in non-volatile memories |
JP2007188552A (ja) * | 2006-01-11 | 2007-07-26 | Sharp Corp | 半導体記憶装置 |
US7355892B2 (en) * | 2006-06-30 | 2008-04-08 | Sandisk Corporation | Partial page fail bit detection in flash memory devices |
KR100791341B1 (ko) * | 2006-09-04 | 2008-01-03 | 삼성전자주식회사 | 비휘발성 메모리 장치의 기입 방법 및 그 방법을 사용하는비휘발성 메모리 장치 |
KR101013200B1 (ko) * | 2006-10-10 | 2011-02-10 | 샌디스크 코포레이션 | 비휘발성 메모리 프로그램 동작에서의 가변 프로그램 전압 증분값 |
JP4496238B2 (ja) * | 2007-06-04 | 2010-07-07 | 株式会社東芝 | 不揮発性メモリ装置 |
KR100888823B1 (ko) * | 2007-06-27 | 2009-03-17 | 삼성전자주식회사 | 비휘발성 메모리 시스템, 및 비휘발성 메모리 시스템의프로그램 방법 |
KR101343597B1 (ko) * | 2007-08-09 | 2013-12-20 | 삼성전자주식회사 | 낸드 플래시 메모리 장치 및 그것의 프로그램 방법 |
JP5150245B2 (ja) * | 2007-12-27 | 2013-02-20 | 株式会社東芝 | 半導体記憶装置 |
JP4709868B2 (ja) * | 2008-03-17 | 2011-06-29 | 株式会社東芝 | 半導体記憶装置 |
-
2009
- 2009-03-23 JP JP2009070862A patent/JP5039079B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-03 TW TW099103240A patent/TWI455134B/zh active
- 2010-02-19 US US12/708,822 patent/US8339833B2/en active Active
- 2010-03-05 KR KR1020100019734A patent/KR101196186B1/ko active IP Right Grant
- 2010-03-10 CN CN201010135739.5A patent/CN101847441B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1542856A (zh) * | 2003-02-21 | 2004-11-03 | 松下电器产业株式会社 | 非易失性半导体存储器件及其记录方法 |
US7251160B2 (en) * | 2005-03-16 | 2007-07-31 | Sandisk Corporation | Non-volatile memory and method with power-saving read and program-verify operations |
CN101086897A (zh) * | 2006-06-07 | 2007-12-12 | 意法半导体股份有限公司 | 非易失存储器设备 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108766495A (zh) * | 2012-08-21 | 2018-11-06 | 群联电子股份有限公司 | 数据写入方法、存储器控制器与存储器存储装置 |
CN109219850A (zh) * | 2016-04-28 | 2019-01-15 | 艾沃思宾技术公司 | 存储器中的延迟回写 |
CN109219850B (zh) * | 2016-04-28 | 2023-08-04 | 艾沃思宾技术公司 | 存储器中的延迟回写 |
CN111312308A (zh) * | 2018-12-11 | 2020-06-19 | 爱思开海力士有限公司 | 半导体器件和包括其的半导体*** |
CN111312308B (zh) * | 2018-12-11 | 2023-09-22 | 爱思开海力士有限公司 | 半导体器件和包括其的半导体*** |
CN112802518A (zh) * | 2021-03-25 | 2021-05-14 | 深圳市汇顶科技股份有限公司 | 数据写入方法、片上***芯片及计算机可读存储介质 |
CN112802518B (zh) * | 2021-03-25 | 2021-07-02 | 深圳市汇顶科技股份有限公司 | 数据写入方法、片上***芯片及计算机可读存储介质 |
Also Published As
Publication number | Publication date |
---|---|
CN101847441B (zh) | 2013-04-17 |
TW201037712A (en) | 2010-10-16 |
US20100238706A1 (en) | 2010-09-23 |
JP5039079B2 (ja) | 2012-10-03 |
TWI455134B (zh) | 2014-10-01 |
KR101196186B1 (ko) | 2012-11-01 |
US8339833B2 (en) | 2012-12-25 |
KR20100106211A (ko) | 2010-10-01 |
JP2010225228A (ja) | 2010-10-07 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170803 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220110 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |