CN102694060B - Non-vacuum preparation technique of compound thin-film solar cell and annealing mode - Google Patents

Non-vacuum preparation technique of compound thin-film solar cell and annealing mode Download PDF

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CN102694060B
CN102694060B CN201110211276.0A CN201110211276A CN102694060B CN 102694060 B CN102694060 B CN 102694060B CN 201110211276 A CN201110211276 A CN 201110211276A CN 102694060 B CN102694060 B CN 102694060B
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annealing
solar cell
sample
preparation
film solar
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CN102694060A (en
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陈勤妙
窦晓鸣
李振庆
倪一
程抒一
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University of Shanghai for Science and Technology
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the field of solar cells, particularly a preparation technique of a compound thin-film solar cell, which comprises the following steps: selecting element simple substances or binary compounds composed of the elements as raw materials; carrying out chemical reaction while mechanical-chemical grinding to generate target compound powders, and preparing the target compound powders into printing pulps by using proper dispersing agents; and carrying out effective annealing treatment on the printed thin-film to obtain a high-conversion-efficiency solar cell. The non-vacuum preparation technique of the compound thin-film solar cell has the characteristics of low production cost, short production cycle and high production efficiency. The invention also provides a simple and efficient annealing mode to improve the thin-film obtained by non-vacuum precipitation. The invention has the characteristics of low production cost, short production cycle and high production efficiency.

Description

The antivacuum preparation technology of compound film solar cell and annealing way
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of compound film solar cell technology of preparing.
Background technology
Thin-film solar cells has that conversion efficiency is high, energy consumption is low and stability high, meets solar battery thin film, large area, high efficiency development trend, is considered to be the low cost substitute technology of conventional solar cell.In thin-film solar cells, compound film solar cell has the features such as absorption efficiency is high, bandwidth is moderate, has obtained great development.
Absorbing layer of thin film solar cell uses vacuum preparation method to obtain conventionally, comprising: the chemical vapor transportation of vacuum evaporation, magnetron sputtering, electro-deposition, electron beam evaporation, plating, enclosure space, chemical vapour deposition (CVD), molecular beam epitaxy, Metalorganic chemical vapor deposition method etc.Although vacuum preparation method can obtain the solar cell of greater efficiency, exist the defects such as the low and settling rate of vacuum equipment costliness, materials'use rate is low to make the defect of should not large area commercially producing.Antivacuum preparation technology had obtained a large amount of research and developments to have potential advantages cheaply in recent years, and wherein print process has that materials'use rate approaches 100%, compound elemental ratio can realize molecular level control, production efficiency high is adopted by numerous Sunpower Corp..But the module price of its production is still very high, also cannot form competition with traditional electrical network price.Sum up reason, main restricting factor has 2 points: 1) nano particle of the synthetic printing of nano particle print process use is often accompanied by the use of toxic solvent, and the purity of repeatability and synthesis of nano particle all not good enough, synthesis cycle is long; 2) film quality directly obtaining based on antivacuum precipitation is poor, and the quality that need improve film through effective annealing in process technology just likely obtains the solar cell of high conversion efficiency.Present stage, antivacuum technology was all generally used toxicity very strong and expensive H2S, H2Se or Se steam etc. in link in annealing, and annealing efficiency is not ideal.
And common annealing in process is the heating region that sample is placed on to annealing furnace, when annealing is carried out, together with the temperature of sample and annealing furnace, rises and reach balance.Such annealing in process mode has following deficiency: 1) the instrument heating-up time be all generally in minute, contrasting total annealing time generally all can not ignore, this makes the control of annealing experiment become complicated, do not meet the requirement of commercially producing, also make experimental data that different instruments obtain do not possess rigorous can be with reference to property; 2) by common annealing way, need the instrument that heating rate is very high could realize fast temperature annealing, greatly increase experimental cost.
Summary of the invention
The invention discloses the antivacuum preparation technology of a kind of compound film solar cell, to solve the problems of the technologies described above.
The invention also discloses the antivacuum preparation technology's of a kind of compound film solar cell annealing way, to solve the problems of the technologies described above.
Technical problem solved by the invention can realize by the following technical solutions:
The antivacuum preparation technology of compound film solar cell, is characterized in that, comprises the following steps,
1) absorbed layer precipitation CuInSe 2the preparation of target compound powder;
2) printing CuInSe 2the preparation of slurry;
3) preparation of FTO substrate of glass;
4) TiO 2the preparation of compacted zone;
5) In 2s 3the preparation of resilient coating;
6) print process precipitate C ISe absorbed layer;
7) sample that printing obtains is removed organic dispersion reagent through annealing in process and is improved degree of crystallinity;
8) vacuum sputtering is prepared Mo electrode layer, obtains efficient solar cell.
Described CuInSe 2target compound powder is by the method preparation of mechanochemistry, preparation method is as follows: element simple substance Cu, In and Se powder are mixed and are inserted in a container of agate ball beveller (planetary ball mill) for 1: 1: 2 in molar ratio, in container, add appropriate big or small agate ball after cover lid seal; In another container, also put into the agate ball of suitable quality, make the gross mass of 2 containers identical.According to different compounds and the corresponding experiment condition of material properties control, as ratio of grinding rate, milling time, big or small agate ball etc., can obtain corresponding target compound powder.This experiment is used 700rmp, and 30min prepares CuInSe 2target compound powder, XRD result shows the CuInSe obtaining 2target compound powder is monocrystalline phase.
Described CuInSe 2the preparation of slurry: by CuInSe 2target compound powder mixes mutually with suitable dispersion reagent, and preparing can be for the slurry of printing.Its preparation process is as follows:
A) get 1.5gCISe powder and grind 10min;
B) slowly add 1ml alcohol and grind 5min;
C) slowly add again 1ml distilled water and grind 5min;
D) under the help of 100ml alcohol, slurry is transferred to beaker;
E) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min;
F) add 5g α-Terpineol (terpinol);
G) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min;
H) add Ethyl-Cellulose (ethyl cellulose);
I) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min; 5 times repeatedly
J) adopt rotary evaporator evaporation alcohol and distilled water.
The preparation process of described FTO substrate of glass is as follows:
A) size dimension that FTO glass-cutting is become to need, uses acetone (acetone) or alcohol to clean 15 minutes in ultrasonic clean pond;
B) clean dry FTO glass is placed into UV ozone system (UV-O3) and carries out FTO photon surface treatment (Photon Surface Process).
Described TiO 2the preparation of compacted zone: this experiment adopts thermal decomposition method to prepare TiO 2compacted zone:
A) will be placed on heating plate (hotplate) through photon surface-treated FTO substrate of glass upper, and suitable temperature of heating plate will be set and make FTO base reservoir temperature maintain 450 DEG C;
B) TAA (di-iso-propoxy titanium-bis (acetylacetone) in aerosol form) solution and alcohol were mixed to get to 20mL mixed liquor by 1: 9, with N 2gas is carrier, controls corresponding experiment parameter (as the distance of spraying rate, spraying container mouth and substrate of glass etc.) and sprays, and obtains TiO 2dense thin rete (for obtaining uniform thickness, needs constantly to rotate FTO substrate of glass in experiment; 20mL solution at the uniform velocity sprays needs 30min left and right).
Described In 2s 3the preparation of resilient coating: this experiment adopts thermal decomposition method to prepare In 2s 3resilient coating:
A) preparing before resilient coating FTO/TiO 240mM TiCl is inserted in compacted zone substrate 4solution is processed, and treatment conditions are 70 DEG C, 30 minutes;
B) will process and dry FTO/TiO 2compacted zone substrate is placed on heating plate, suitable temperature of heating plate is set and makes base reservoir temperature maintain 200 DEG C of left and right;
C) use distilled water configuration InCl 3mixed solution with urea, makes InCl 3be respectively 0.01M and 0.02M with the concentration of urea; Get 15ml solution, adopt thermal decomposition method spraying can obtain In 2s 3resilient coating (15mL solution at the uniform velocity sprays needs 20min left and right).
CuInSe 2the precipitation of absorbed layer, is used silk screen print method precipitate C uInSe 2absorbed layer, step is as follows:
A) use silk screen printing instrument that the above-mentioned printing slurry preparing is printed on to FTO/TiO 2/ In 2s 3in resilient coating substrate (one-step print can obtain the film of 5 μ m left and right conventionally);
B) substrate after printing is put into the box that contains appropriate alcohol gas, after 1 minute, substrate is taken out and placed on 125 DEG C of heating plates and to be dried 5 minutes.
Annealing way is as follows:
A) sample is sealed in transparent glass tube, and one end location of glass tube is being embedded with heating with in the high temperature resistant foam of tungsten filament, and sample is fixed on on ferromagnetic carrier, and annealing is at N 2atmosphere is carried out under enclosing;
B), before annealing is carried out, sample is away from heating region, after annealing furnace reaches the annealing temperature balance needing, and the extremely fast annealing temperature that uses interactional inside and outside magnetic force that sample is moved into temperature province and carries out moment intensification;
C) after annealing finishes, sample is shifted out heating region rapidly so that it is cooling fast.
The main main points of this annealing technology are: before heating, the sample of required annealing is removed to annealing region, until annealing region temperature be elevated to temperature required after, thereby sample is moved into rapidly and realizes the fast temperature that moment heats up and anneal; The outside magnetic force of experiment ingenious use has been realized mobile control to the sample in anneal chamber atmosphere.
Beneficial effect: owing to adopting technique scheme, the present invention has realized the antivacuum preparation of compound film solar cell, has the advantages that production cost is low, with short production cycle and production efficiency is high.Annealing way of the present invention can be realized the extremely fast annealing temperature of moment intensification, and then effectively improve the quality of film, due to solar cell when heated compole short, contrast total annealing time and often can ignore, therefore simple, practical, repeatable high, and lower to the requirement of instrument.
Brief description of the drawings
The CuInSe of Fig. 1 for adopting in the embodiment of the present invention 2film solar battery structure figure;
Fig. 2 is the principle schematic of synthesising target compound powder of the present invention;
Fig. 3 is that the present invention grinds the CuInSe obtaining 2target compound powder X-ray RD diffraction pattern;
Fig. 4 is CuInSe of the present invention 2what printing was starched prepares block diagram;
Fig. 5 is annealing device schematic diagram of the present invention;
Fig. 6 is the present invention and conventional annealing mode Contrast on effect: the heating mode that is annealed sample;
Fig. 7 is the present invention and conventional annealing mode Contrast on effect: the XRD diffraction pattern that is annealed sample;
Fig. 8 is the present invention and conventional annealing mode Contrast on effect: the UV absorption spectrum that is annealed sample;
Fig. 9 is the SEM configuration of surface that conventional annealing mode is annealed sample;
Figure 10 is the SEM configuration of surface that the present invention is annealed sample;
Figure 11 is the present invention and conventional annealing mode Contrast on effect: the J-V characteristic that is annealed sample;
Figure 12 is under Se environment, uses the sample SEM configuration of surface figure of the present invention's annealing;
Figure 13 is under Se environment, uses the sample J-V characteristic of the present invention's annealing.
Embodiment
Technological means, the creation characteristic realized for the present invention, reach object and effect is easy to understand, below in conjunction with drawings and Examples, the present invention is further elaborated.
With reference to Fig. 1, compound film solar battery structure figure.The antivacuum preparation technology of compound film solar cell, comprises the following steps,
1) absorbed layer precipitation CuInSe 2the preparation of target compound powder;
2) printing CuInSe 2the preparation of slurry;
3) preparation of FTO substrate of glass;
4) TiO 2the preparation of compacted zone;
5) In 2s 3the preparation of resilient coating;
6) print process precipitate C ISe absorbed layer;
7) sample that printing obtains is removed organic dispersion reagent through annealing in process and is improved degree of crystallinity;
8) vacuum sputtering is prepared Mo electrode layer, obtains efficient solar cell.
CuInSe 2target compound powder is by the method preparation of mechanochemistry, preparation method is as follows: element simple substance Cu, In and Se powder are mixed and inserted in a container of agate ball beveller (planetary ball mill) for 1: 1: 2 in molar ratio, add the rear cover lid of appropriate big or small agate ball 211 to seal in container; In another container, also put into the agate ball 211 of suitable quality, make the gross mass of 2 containers identical.According to different compounds and the corresponding experiment condition of material properties control, as ratio of grinding rate, milling time, big or small agate ball 211 etc., can obtain corresponding target compound powder.This experiment is used 700rmp, and 30min prepares CuInSe 2target compound powder, with reference to Fig. 3, XRD diffraction pattern result shows the CuInSe obtaining 2target compound powder is monocrystalline phase.
CuInSe 2the preparation of slurry: by CuInSe 2target compound powder mixes mutually with suitable dispersion reagent, and preparing can be for the slurry of printing.With reference to Fig. 4, its preparation process is as follows:
A) get 1.5gCISe powder and grind 10min;
B) slowly add 1ml alcohol and grind 5min;
C) slowly add again 1ml distilled water and grind 5min;
D) under the help of 100ml alcohol, slurry is transferred to beaker;
E) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min;
F) add 5g α-Terpineol (terpinol);
G) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min;
H) add Ethyl-Cellulose (ethyl cellulose);
I) with bar magnet most advanced and sophisticated thoroughly agitating solution 5min, then ultrasonic vibration 1min; 5 times repeatedly
J) adopt rotary evaporator evaporation alcohol and distilled water.
The preparation process of FTO substrate of glass is as follows:
A) size dimension that FTO glass-cutting is become to need, uses acetone (acetone) or alcohol to clean 15 minutes in ultrasonic clean pond;
B) clean dry FTO glass is placed into UV ozone system (UV-O3) and carries out FTO photon surface treatment (Photon Surface Process).
TiO 2the preparation of compacted zone: this experiment adopts thermal decomposition method to prepare TiO 2compacted zone:
A) will be placed on heating plate (hotplate) through photon surface-treated FTO substrate of glass upper, and suitable temperature of heating plate will be set and make FTO base reservoir temperature maintain 450 DEG C;
B) TAA (di-iso-propoxy titanium-bis (acetylacetone) in aerosol form) solution and alcohol were mixed to get to 20mL mixed liquor by 1: 9, with N 2gas is carrier, controls corresponding experiment parameter (as the distance of spraying rate, spraying container mouth and substrate of glass etc.) and sprays, and obtains TiO 2dense thin rete (for obtaining uniform thickness, needs constantly to rotate FTO substrate of glass in experiment; 20mL solution at the uniform velocity sprays needs 30min left and right).
In 2s 3the preparation of resilient coating: this experiment adopts thermal decomposition method to prepare In 2s 3resilient coating:
A) preparing before resilient coating FTO/TiO 2compacted zone substrate is inserted 40mM TiCl4 solution and is processed, and treatment conditions are 70 DEG C, 30 minutes;
B) will process and dry FTO/TiO 2compacted zone substrate is placed on heating plate, suitable temperature of heating plate is set and makes base reservoir temperature maintain 200 DEG C of left and right;
C) use distilled water configuration InCl 3mixed solution with urea, makes InCl 3be respectively 0.01M and 0.02M with the concentration of urea; Get 15ml solution, adopt thermal decomposition method spraying can obtain In 2s 3resilient coating (15mL solution at the uniform velocity sprays needs 20min left and right).
CuInSe 2the precipitation of absorbed layer, is used silk screen print method precipitate C uInSe 2absorbed layer, step is as follows:
A) use silk screen printing instrument that the above-mentioned printing slurry preparing is printed on to FTO/TiO 2/ In 2s 3in resilient coating substrate (one-step print can obtain the film of 5 μ m left and right conventionally);
B) substrate after printing is put into the box that contains appropriate alcohol gas, after 1 minute, substrate is taken out and placed on 125 DEG C of heating plates and to be dried 5 minutes.
With reference to Fig. 5, annealing in process in the following way:
A) sample 212 is sealed in transparent glass tube, and one end location of glass tube is being embedded with heating with in the high temperature resistant foam of tungsten filament, and sample 212 is fixed on on ferromagnetic carrier, and annealing is at N 2atmosphere is carried out under enclosing; The carrier of placing sample 212 is transportable under the effect of external force; Carrier and the ferromagnetic substance of placing sample 212 as made are rigidly connected, in the time of needs mobile example 212, just add that in instrument outside strong magnetic interaction can be by mobile example 212 to target area.
B), before annealing is carried out, sample 212 is away from heating region, after annealing furnace reaches the annealing temperature balance needing, and the extremely fast annealing temperature that uses interactional inside and outside magnetic force that sample 212 is moved into temperature province and carries out moment intensification;
C) after annealing finishes, sample 212 is shifted out heating region rapidly so that it is cooling fast.
The present embodiment has carried out comparative study to these two kinds of annealing way:
With reference to Fig. 6, the Contrast on effect of conventional annealing mode: be annealed sample heating mode.
With reference to Fig. 7, N 2under atmosphere, 600 DEG C, 15min XRD diffraction pattern, shows to use annealing way of the present invention can effectively improve the structure characteristic of crystal;
With reference to Fig. 8, UV absorption spectrum shows that annealing way of the present invention has reduced the absorptivity of visible light part, but has also increased slightly the absorption of high energy short-wavelength light simultaneously;
With reference to Fig. 9, SEM aspect graph has clearly illustrated both different-effects: the sample surfaces that mode is annealed conventionally presents some large crack～1.2 μ m, the particle of diameter～1 μ m left and right is embedded in the granule that diameter is 0.2 to 0.4 μ m, and particle shape is Powdered;
With reference to Figure 10, the sample surfaces of the present invention's annealing has been shown fusing to a certain degree, and the particle aggregation of these surface meltings forms laminated structure together and inlays each other, and these layer structures of inlaying make film become densification.Absorbed layer surface is the territory, high absorbing area of sunlight, is therefore also the high complex centre of electron-hole pair, so the surface of film will produce material impact to its overall performance but film surface exists a large amount of dangling bonds simultaneously.Above-mentioned SEM configuration of surface shows annealing way energy part passivating film of the present invention surface, and then improves film performance.
The preparation of Mo electrode: the present embodiment uses vacuum sputtering to prepare Mo electrode layer: sputtering condition: 50W, 0.5pa, T=24 DEG C, 10sccm Ar, t=90min.
J-V characteristic test: with reference to Figure 11, Figure 12, Figure 13, use the photoelectric properties (Jsc, Voc, FF, η) of J-V work station test battery, and these two kinds of annealing way are contrasted: with reference to Figure 11, N 2under atmosphere, 600 DEG C, 15min J-V characteristic, has confirmed the effect of surface passivation, and both annealing way of the present invention can increase the battery attribute that is annealed sample, as short circuit current and fill factor, curve factor etc., had also improved the conversion efficiency of solar cell simultaneously.The experiment of Se ambient anneal shows to adopt annealing way of the present invention can effectively increase short circuit current, improves the attribute of solar cell.
More than show and described general principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.

Claims (10)

1. the antivacuum preparation technology of compound film solar cell, is characterized in that, comprise the following steps,
1) absorbed layer precipitation CuInSe 2the preparation of target compound powder;
2) printing CuInSe 2the preparation of slurry;
3) preparation of FTO substrate of glass;
4) TiO 2the preparation of compacted zone;
5) In 2s 3the preparation of resilient coating;
6) print process precipitate C ISe absorbed layer;
7) sample that printing obtains is removed organic dispersion reagent through annealing in process and is improved degree of crystallinity;
8) vacuum sputtering is prepared Mo electrode layer, obtains solar cell;
Annealing way is as follows:
A) sample is sealed in transparent glass tube, and one end location of glass tube is being embedded with heating with in the high temperature resistant foam of tungsten filament, and sample is fixed on on ferromagnetic carrier, and annealing is at N 2atmosphere is carried out under enclosing;
B), before annealing is carried out, sample is away from heating region, after annealing furnace reaches the annealing temperature balance needing, and the extremely fast annealing temperature that uses interactional inside and outside magnetic force that sample is moved into temperature province and carries out moment intensification;
C) after annealing finishes, sample is shifted out heating region rapidly so that it is cooling fast.
2. the antivacuum preparation technology of compound film solar cell according to claim 1, is characterized in that: CuInSe 2target compound powder is by the method preparation of mechanochemistry, preparation method is as follows: by element simple substance Cu, In and Se powder in molar ratio 1:1:2 mix and insert in a container of agate ball beveller, in container, add agate ball after cover lid seal;
In another container, also put into agate ball, make the gross mass of 2 containers identical;
Control the ratio of grinding rate, milling time, big or small agate ball, obtain CuInSe 2target compound powder.
3. the antivacuum preparation technology of compound film solar cell according to claim 2, is characterized in that: described grinding rate is 700rmp, milling time is 30min, the CuInSe of acquisition 2target compound powder is monocrystalline phase.
4. the antivacuum preparation technology of compound film solar cell according to claim 3, is characterized in that: by CuInSe 2target compound powder mixes mutually with disperseing reagent, prepares printing CuInSe 2slurry.
5. the antivacuum preparation technology of compound film solar cell according to claim 1, is characterized in that: the preparation process of described FTO substrate of glass is as follows:
A) size dimension that FTO glass-cutting is become to need, uses acetone to clean 15 minutes in ultrasonic clean pond;
B) clean dry FTO glass is placed into UV ozone system and carries out the surface treatment of FTO photon.
6. the antivacuum preparation technology of compound film solar cell according to claim 5, is characterized in that: described TiO 2the preparation of compacted zone, concrete steps are as follows:
A) will be placed on heating plate through photon surface-treated FTO substrate of glass, and suitable temperature of heating plate will be set and make FTO base reservoir temperature maintain 450 DEG C;
B) TAA solution and alcohol are mixed to get to 20mL mixed liquor by 1:9, with N 2gas is carrier, and the distance of controlling spraying rate, spraying container mouth and substrate of glass sprays, and obtains TiO 2dense thin rete, for obtaining uniform thickness, needs constantly to rotate FTO substrate of glass in experiment; 20mL solution at the uniform velocity sprays needs 30min.
7. the antivacuum preparation technology of compound film solar cell according to claim 6, is characterized in that: described In 2s 3the preparation of resilient coating, concrete steps are as follows:
A) preparing before resilient coating FTO/TiO 240mM TiCl is inserted in compacted zone substrate 4solution is processed, and treatment conditions are 70 DEG C, 30 minutes;
B) will process and dry FTO/TiO 2compacted zone substrate is placed on heating plate, suitable temperature of heating plate is set and makes base reservoir temperature maintain 200 DEG C;
C) use distilled water configuration InCl 3mixed solution with urea, makes InCl 3be respectively 0.01M and 0.02M with the concentration of urea; Get 15ml solution, adopt thermal decomposition method spraying can obtain In 2s 3resilient coating, 15mL solution at the uniform velocity sprays needs 20min.
8. according to the antivacuum preparation technology of compound film solar cell described in claim 1 to 7 any one, it is characterized in that: described CuInSe 2the precipitation of absorbed layer, is used silk screen print method precipitate C uInSe 2absorbed layer, step is as follows:
A) use silk screen printing instrument that printing slurry is printed on to FTO/TiO 2/ In 2s 3in resilient coating substrate, one-step print can obtain the film of 5 μ m;
B) substrate after printing is put into the box that contains appropriate alcohol gas, after 1 minute, substrate is taken out and placed on 125 DEG C of heating plates and to be dried 5 minutes.
9. the antivacuum preparation technology's of compound film solar cell annealing way, it is characterized in that: sample is sealed in transparent glass tube, one end location of glass tube is being embedded with heating with in the high temperature resistant foam of tungsten filament, and sample is fixed on on ferromagnetic carrier, and annealing is at N 2atmosphere is carried out under enclosing.
10. the antivacuum preparation technology's of compound film solar cell according to claim 9 annealing way, it is characterized in that: before annealing is carried out, sample is away from heating region, after annealing furnace reaches the annealing temperature balance needing, the extremely fast annealing temperature that uses interactional inside and outside magnetic force that sample is moved into temperature province and carries out moment intensification; After annealing finishes, sample is shifted out heating region rapidly so that it is cooling fast.
CN201110211276.0A 2011-07-27 2011-07-27 Non-vacuum preparation technique of compound thin-film solar cell and annealing mode Expired - Fee Related CN102694060B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101525126A (en) * 2009-03-16 2009-09-09 大连交通大学 Preparation process of CuInSe2 solar battery material
CN101820025A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101525126A (en) * 2009-03-16 2009-09-09 大连交通大学 Preparation process of CuInSe2 solar battery material
CN101820025A (en) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 Method for preparing copper-indium-gallium-selenium(sulfur) light absorption layer by adopting non-vacuum process

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M.Valdes et al.Sulfurization of electrodeposited CuInSe2-basedsolar cells.《Materials chemistry and physics》.2011,第125卷(第3期),860-865.
Sulfurization of electrodeposited CuInSe2-basedsolar cells;M.Valdes et al;《Materials chemistry and physics》;20110215;第125卷(第3期);861-862 *

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