CN101807634B - High-brightness light emitting diode chip - Google Patents
High-brightness light emitting diode chip Download PDFInfo
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- CN101807634B CN101807634B CN2009100462743A CN200910046274A CN101807634B CN 101807634 B CN101807634 B CN 101807634B CN 2009100462743 A CN2009100462743 A CN 2009100462743A CN 200910046274 A CN200910046274 A CN 200910046274A CN 101807634 B CN101807634 B CN 101807634B
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Abstract
The invention relates to a high-brightness light emitting diode chip which comprises a substrate, an actuating film arranged on the substrate, a transparent current spreading layer arranged on the actuating film and an electrode unit for providing electric energy for the actuating film. Particularly, the top surface of the connection part of the actuating film with the current spreading layer comprises a high-energy action area acted by using high-energy particles and an electron runner area, wherein the electron runner area is not acted by the high-energy particles, and the resistance value of the electron runner area is relatively smaller than that of the high-energy action area, thus when the electrode unit is used for providing electric power, after current is guided by the current spreading layer to transversely and uniformly spread, the current flows downwards from the electron runner area to pass through the actuating film so as to ensure that the actuating film generates photons. Therefore, the current can pass through the actuating film in proportion with a state pattern corresponding to the electron runner area to improve the internal quantum efficiency of an assembly so as to further improve the whole lighting brightness of the assembly.
Description
Technical field
The present invention relates to a kind of solid luminescent assembly, particularly relate to a kind of light-emitting diode chip for backlight unit (LightEmitting Diode Chip, LED Chip).
Background technology
Consult Fig. 1, light-emitting diode chip for backlight unit 1 comprises start film 12, one deck that base material 11, an one deck is connected on this base material 11 and is arranged on the current-diffusion layer 13 on this start film 12, and one group of electrode unit 14 that is used to provide electric energy.
This base material 11 is by being easy to supply gallium nitride based semi-conducting material building crystal to grow, and for example sapphire (sapphire) constitutes.
This layer start film 12 normally is selected from gallium nitride based semi-conducting material and forms from base material crystalline substance upwards of heap of stone; Has first and second coating layer 121,122 (n-type claddinglayer, p-type cladding layer) that forms n, p type respectively through overdoping; And one deck is formed on this first and second batch coating 121, the active layers between 22 123 (active layer); This first and second coating layer 121,122 relative these active layers 123 form carrier energy barriers and this start film 12 is provided electric energy produce electronics-electric hole compound, release energy, and then conversion produces photon.
This current-diffusion layer 13 is transparent and conductive material with the light of these start film 12 generations relatively, and for example indium tin oxide (ITO) is formed on this start film 12, and forms ohmic contact with this second coating layer 122, laterally evenly spreads in order to the guiding electric current.
This electrode unit 14 comprises one first electrode 141 and one second electrode 142, is separately positioned on first coating layer 121 and this current-diffusion layer 13 and forms ohmic contact, and cooperating each other provides electric energy to this start film 12; When this first and second electrode 141,142 applied electric energy certainly, electric current passed through this start film 12 through these current-diffusion layer 13 even dispersion trains, and made this start film 12 produce photon with photoelectric effect, and then outwards luminous.
Though present light-emitting diode chip for backlight unit 1 can borrow current-diffusion layer 13 lateral steering electric currents to disperse, and then promote internal quantum (internal quantum efficiency).But, being subject to processing procedure, current-diffusion layer 13 and start film 12 degree of ohmic contact mutually are not homogeneous; That is to say, electric current after this current-diffusion layer 13 lateral steerings disperse, still can't " evenly " distributed flow is through the start film; But according to current-diffusion layer 13 and start film 12 zone of the degree preferable (just relative other zones of resistance value are lower) of ohmic contact mutually; The bigger electric current of density is arranged, and downwards stream is through start film 12, and current-diffusion layer 13 and start film 12 zone of the degree of ohmic contact relatively poor (just resistance value other zones are bigger relatively) mutually has then that the lower electric current of density is downward to flow through start film 12; Therefore; Depend the setting of current-diffusion layer 13 alone, to promote internal quantum, the essence effect still belongs to limited as far as even scattered current.
Consult Fig. 2, Fig. 3; Therefore, at present the industry material that can be earlier on start film 12, be relatively higher than current-diffusion layer 13 with resistance value forms the barrier layer 15 that one deck has predetermined image, the restriction of borrowing barrier layer 15; Let electric current follow the zone diffusion downwards that this current-diffusion layer 13 directly contacts with start film 12; Other part is then being borrowed the restriction of barrier layer 15, makes electric current can't continue down to circulate, and is borrowing the barrier layer 15 of artificial design; Force electric current to follow the predetermined zone transmission of circulating downwards, and then promote the internal quantum of start film 12.
Such way can promote internal quantum really effectively, and then the whole luminosity of lifting subassembly; But, increase the barrier layer 15 that one deck has image, concerning processing procedure; Increase the above making step in three roads to I haven't seen you for ages, and improve production cost, simultaneously; The existence of barrier layer 15 also can have influence on the bright dipping situation of start film 12, derives the problem that another need solve.
So present light-emitting diode chip for backlight unit 1 still need be studied improvement, with the internal quantum and the whole luminosity of lifting subassembly.
Summary of the invention
The objective of the invention is is providing a kind of high-brightness LED chip that has the high advantage of internal quantum height and light extraction efficiency simultaneously.
A kind of high-brightness LED chip of the present invention comprises a base material, one deck start film, one deck current-diffusion layer, and one group of electrode unit.
This start film is arranged on this base material and when electric energy is provided and produces photon with photoelectric effect; Has the bottom surface that is connected with this base material; An and end face in contrast to this bottom surface; This end face also is distinguished into a high energy active region with the high energy particle effect, and one do not crossed by the high energy particle effect thereby resistance value relatively less than the electronics flow path area of the resistance value of this high energy active region.
This layer current-diffusion layer is that transparent and conductive material constitutes with the light that this start film is produced, and with this start film ohmic contact be formed on this start film end face.
This group electrode unit has first electrode that connects with this start symphysis; And one be arranged on this current-diffusion layer and be fitted to each other with this first electrode and this start film provided second electrode of electric energy; And when with this first and second electrode cooperation electric energy being provided, electric current is made this start film produce photon along the laterally even dispersion of this end face and from the downward stream of this electronics flow path area through this start film by this current-diffusion layer guiding.
In addition, another kind of high-brightness LED chip of the present invention comprises a base material, one deck start film, one deck current-diffusion layer, and a cube electrode sheet.
This base material is made up of electric conducting material.
This start film be arranged on this base material and with this base material ohmic contact mutually; And, electric energy produces photon when being provided with photoelectric effect; This start film has the bottom surface that is connected with this base material; And an end face in contrast to this bottom surface, this end face also is distinguished into a high energy active region with the high energy particle effect, and one do not crossed by the high energy particle effect thereby resistance value relatively less than the electronics flow path area of the resistance value of this high energy active region.
This current-diffusion layer is that transparent and conductive material constitutes with the light that this start film is produced, and with this start film ohmic contact be formed on this start film end face.
This electrode slice is arranged on this current-diffusion layer and is fitted to each other with this base material provides electric energy to this start film; And when cooperating with this base material with this electrode slice when electric energy is provided, electric current by this current-diffusion layer guiding along this end face laterally evenly disperse and from this electronics flow path area downwards stream make this start film produce photon through this start film.
Beneficial effect of the present invention is: the end face with high energy particle effect start film forms high energy active region and electronics flow path area; Let electric current after the current-diffusion layer diffusion, be limited only to diffuse through the start film downwards by the electronics flow path area; And then the internal quantum of lifting start film; And because the high energy particle effect just changes the physical property of start film end face presumptive area; Can't exert an influence to the bright dipping of start film, therefore can be after internal quantum promote, the whole luminosity of effective lifting subassembly.
Description of drawings
Fig. 1 is a cross-sectional schematic, and present a kind of light-emitting diode chip for backlight unit is described;
Fig. 2 is a vertical view, present a kind of light-emitting diode chip for backlight unit with barrier layer;
Fig. 3 is a cross-sectional schematic, cooperates Fig. 2 that the present light-emitting diode chip for backlight unit with barrier layer is described;
Fig. 4 is a vertical view, and one first preferred embodiment of high-brightness LED chip of the present invention is described;
Fig. 5 is a cross-sectional schematic, cooperates Fig. 4 that first preferred embodiment of high-brightness LED chip of the present invention is described;
Fig. 6 is a vertical view, and one second preferred embodiment of high-brightness LED chip of the present invention is described;
Fig. 7 is a cross-sectional schematic, cooperates Fig. 6 that second preferred embodiment of high-brightness LED chip of the present invention is described; And
Fig. 8 is a cross-sectional schematic, explains that one is similar to the illustrated high-brightness LED chip of second preferred embodiment of high-brightness LED chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated:
Consult Fig. 4, Fig. 5; One first preferred embodiment of high-brightness LED chip 2 of the present invention comprises start film 22, one deck that base material 21, an one deck is connected on this base material 21 and is arranged on the current-diffusion layer 24 on this start film 22, and one group comprises that one first electrode 251 and one second electrode 252 are used to provide the electrode unit 25 of electric energy.
This base material 21 is by being easy to supply gallium nitride based semi-conducting material building crystal to grow, and for example sapphire material constitutes.
This layer start film 22 normally is selected from gallium nitride based semi-conducting material and forms from base material 21 crystalline substance upwards of heap of stone; Has the bottom surface 225 that is connected with this base material 21; An and end face 224 in contrast to this bottom surface 225; On structure, this start film 22 also has and forms first and second coating layer 221,222 of n, p type respectively through overdoping, and is formed on this first and second batch coating 221, the active layers between 222 223; This first and second coating layer 121,122 relative these active layers 123 form carrier energy barriers and this start film 12 is provided electric energy produce electronics-electric hole compound, release energy, and then convert light to.
Specifically; After this base material 21 crystalline substances upwards of heap of stone grew up to this start film 22, these base material 22 end faces 224 presumptive areas were with the high energy particle effect, and formed a high energy active region 226 with the high energy particle effect; Reach one not by the electronics flow path area 227 of high energy particle effect; After through high energy particle Shu Zuoyong, the material behavior of these end face 224 high energy active regions 226 can change, and makes this regional resistance value be relatively higher than electronics flow path area 227; In this example; Be in electricity slurry coupling etching machine (ICP), these start film 22 end faces 224 presumptive areas carried out physical bombardment, form this high energy active region 226 with high-octane argon ion; Other; With mist, for example be mist (argon gas/boron chloride gas, the Ar/BCl that is selected from argon gas and boron chloride gas
3), mist (argon gas/chlorine, the Ar/Cl of argon gas and chlorine
2), mist (argon gas/carbon tetrafluoride gas, the Ar/CF of argon gas and carbon tetrafluoride gas
4), or the mist of argon gas, oxygen and carbon tetrafluoride gas (argon gas/oxygen/carbon tetrafluoride gas, Ar/O
2/ CF
4) effect, also can start film 22 end faces 224 active regions be divided into high energy active region 226 and electronics flow path area 227.
This current-diffusion layer 24 is transparent and conductive material with the light of these start film 22 generations relatively; For example indium tin oxide is formed on start film 22 end faces 224; And form ohmic contact with this second coating layer 221; In order to the horizontal evenly diffusion of guiding electric current, and because the resistance value of end face 224 high energy active regions 226 is relatively higher than the resistance value of electronics flow path area 227, so only make it produce photon from electronics flow path area 227 downward streams through start film 22 after can limiting the electric current horizontal proliferation.
First and second electrode the 251, the 252nd of this electrode unit 25 is constituted with electric conducting materials such as alloy, metals; This first electrode 251 is arranged on first coating layer 221; Second electrode 252 is arranged on this current-diffusion layer 24 and forms ohmic contact, to this start film 22 electric energy is provided ordinatedly each other.
When this first and second electrode 251,252 applies electric energy certainly; Electric current circulates along these start film 22 end faces 224 even lateral dispersion through this current-diffusion layer 24; Borrowing the restriction of high energy active region 226 then; Force electric current to follow corresponding electronics flow path area 227 and diffuse through start film 22 downwards, and then make start film 22 produce photon with photoelectric effect; The light that produces, end face 224, current-diffusion layer 24 are passed towards second electrode, 252 directions in the footpath, penetrate to the external world.
Because the direct corresponding current of the area shape of electronics flow path area 227 flows the density through the zone of start film 22, thereby can let start film 22 produce photon with more efficient mode, in other words; Can borrow the shape of artificial action formation high energy active region 226 with electronics flow path area 227, area size etc.; Let electric current flow more equably effectively, promote the internal quantum of start film 22, in addition through start film 22; The high energy particle effect just changes the physical characteristic of end face 224 structures; So can't influence advancing of light, also therefore, even when keeping identical light extraction efficiency; Also can be because of the lifting of internal quantum, and then the effective whole luminosity of lifting subassembly.
Consult Fig. 6, Fig. 7, one second preferred embodiment of high-brightness LED chip 3 of the present invention comprises start film 32, one deck that base material 31, an one deck is connected on this base material 31 and is arranged on the current-diffusion layer 34 on this start film 32, and a cube electrode sheet 35.
This base material 31 is by the material of conduction, for example metal, alloy, but can conduct electricity heat conduction simultaneously, cooperate this electrode slice 35 electric energy usefulness to be provided as electrode, the used heat diversion that produces during simultaneously with 32 starts of start film is to extraneous.
This layer start film 32 normally is selected from gallium nitride based semi-conducting material, and behind brilliant formation of heap of stone on the sapphire substrate that is easy to supply gallium nitride based semi-conducting material building crystal to grow; Change again and be labelled on this base material; Because this part technology has been that industry institute is known; And be not that the present invention creates the emphasis place, so do not add to detail at this.This start film 32 has the bottom surface 325 that is connected with this base material 31; An and end face 324 in contrast to this bottom surface 325; And on structure; This start film 32 also has first and second coating layer 321,322 that forms n, p type respectively through overdoping; And be formed on this first and second batch coating 321, the active layers between 322 323, these first and second coating layer 321,322 relative these active layers 323 form carrier energy barriers and this start film 32 is provided electric energy produce electronics-electric hole compound, release energy, and then convert light to.
Said similar with last example; This start film 32 change be labelled on this base material 31 after, these end face 324 presumptive areas are with the high energy particle effect, and form a high energy active region 326 with the high energy particle effect; Reach one not by the electronics flow path area 327 of high energy particle effect; After through high energy particle Shu Zuoyong, the physical characteristic of these end face 324 high energy active regions 326 can change, and makes resistance value be relatively higher than electronics flow path area 327; In this example; Be in electricity slurry coupling etching machine (ICP), these start film 32 end faces 324 presumptive areas carried out physical bombardment, form this high energy active region 326 with high-octane argon ion; Other; With mist, for example be mist (argon gas/boron chloride gas, the Ar/BCl that is selected from argon gas and boron chloride gas
3), mist (argon gas/chlorine, the Ar/Cl of argon gas and chlorine
2), mist (argon gas/carbon tetrafluoride gas, the Ar/CF of argon gas and carbon tetrafluoride gas
4), or the mist of argon gas, oxygen and carbon tetrafluoride gas (argon gas/oxygen/carbon tetrafluoride gas, Ar/O
2/ CF
4) effect, also can start film 22 end faces 224 active regions be divided into high energy active region 226 and electronics flow path area 227.。
This current-diffusion layer 34 is transparent and conductive material with the light of these start film 32 generations relatively; For example indium tin oxide is formed on start film 32 end faces 324; And form ohmic contact with this second coating layer 322; In order to the horizontal evenly diffusion of guiding electric current, and because the resistance value of end face 324 high energy active regions 326 is relatively higher than the resistance value of electronics flow path area 327, so only make it produce photon from electronics flow path area 327 downward streams through start film 32 after can limiting the electric current horizontal proliferation.
This electrode slice 35 is constituted and is arranged on this current-diffusion layer 34 with electric conducting materials such as alloy, metals, and forms ohmic contact with this current-diffusion layer 34, to this start film 32 electric energy is provided with this base material 31 with being fitted to each other.
When this base material 31 certainly, electrode slice 35 cooperate when applying electric energy; Electric current circulates along these start film 32 end faces 324 even lateral dispersion through this current-diffusion layer 34; Borrowing the restriction of high energy active region 326 then; Force electric current to follow corresponding electronics flow path area 327 and diffuse through start film 32 downwards, and then make start film 32 produce photon with photoelectric effect; The light that produces, end face 324, current-diffusion layer 34 are passed towards electrode slice 35 directions in the footpath, penetrate to the external world.
Consult Fig. 8; Preferably, at the base material 31 ' of the described high-brightness LED chip 3 of this second preferred embodiment, but also comprise the substrate that material constituted 311 of one deck with conduction and heat conduction; And one deck with conduction, heat conduction and simultaneously the material of high index of refraction be formed in this substrate 311 and the speculum 312 that is connected with these start film 32 bottom surfaces 325; But these speculum 312 reverberation, and let start film 32 produce and the light of advancing towards this base material 31 ' direction is reflected and advances towards these electrode slice 35 directions, penetrate to the external world and pass end face 324, current-diffusion layer 34; And then the amount of light of lifting subassembly more, the whole luminosity of lifting subassembly.
Comprehensive above-mentioned explanation can know that high- brightness LED chip 2,3 of the present invention is to borrow high energy particle; Specifically, start film 22,32 end faces 224,324 presumptive areas are carried out physical bombardment, form different high energy active region 226,326 and the electronics flow path areas 227,327 of resistance value with the argon ion of electricity slurry coupling etching machine; Thereby force the restriction electric current after current-diffusion layer 224,324 laterally evenly spreads; Can only make it produce photon through start film 22,32 from electronics flow path area 227,327 downward streams, promote the internal quantum of start film 22,32 whereby effectively, simultaneously; Because the high energy particle effect just changes the physical characteristic of end face 224,324 structures; So can't influence advancing of light, also therefore, even when keeping identical light extraction efficiency; Also can be because of the lifting of internal quantum, and then the effective whole luminosity of lifting subassembly.
Compare with present light-emitting diode chip for backlight unit 1; The present invention only need increase the step of one high energy particle effect; Can reach the light-emitting diode chip for backlight unit 1 that is similar to background technology must be with the effect of at least three road steps making barrier layers 15; Simultaneously, can also avoid influencing the problem of bright dipping, reach the purpose of the present invention's creation really because increase barrier layer 15.
Claims (9)
1. high-brightness LED chip; Comprise start film, one deck current-diffusion layer that base material, an one deck are arranged on this base material and when electric energy is provided, produce photon with photoelectric effect; And one group of electrode unit; This current-diffusion layer is that transparent and conductive material constitutes with the light that this start film is produced; And with this start film ohmic contact be formed on this start film, this electrode unit has first electrode that connects with this start symphysis, and one is arranged on this current-diffusion layer and is fitted to each other with this first electrode and this start film is provided second electrode of electric energy; And when with this first and second electrode cooperation electric energy being provided, electric current is evenly disperseed also to flow downwards through this start film to make this start film produce photon along this end face is horizontal by this current-diffusion layer guiding; It is characterized in that:
This start film has the bottom surface that is connected with this base material; And one in contrast to this bottom surface and the end face that is connected with this current-diffusion layer; This end face also is distinguished into a plurality of intervals and uniformly dispersing ground is crossed with the high energy particle effect and high energy active region that electric current can't be passed through, and one is not crossed by the high energy particle effect thereby the resistance value electronics flow path area that stream passes through of can supplying power less than the resistance value of said high energy active region relatively.
2. high-brightness LED chip as claimed in claim 1 is characterized in that:
This high energy active region is to carry out the physical property bombardment with argon ion to form.
3. high-brightness LED chip as claimed in claim 1 is characterized in that:
This high energy active region is to form with the mist effect.
4. high-brightness LED chip as claimed in claim 3 is characterized in that:
This mist is to be selected from one of following mist: the mist of mist, argon gas and the carbon tetrafluoride gas of mist, argon gas and the chlorine of argon gas and boron chloride gas, the mist of argon gas, oxygen and carbon tetrafluoride gas.
5. high-brightness LED chip; Comprise start film, one deck that base material, an one deck that is made up of electric conducting material is arranged on this base material and be formed on to ohmic contact the current-diffusion layer on this start film mutually with this start film; And electrode slice that is arranged on this current-diffusion layer; This start film produces photon with photoelectric effect when electric energy is provided; This current-diffusion layer is that transparent and conductive material constitutes with the light that this start film is produced; This electrode slice and this base material are fitted to each other provides electric energy to this start film, and when cooperating with this base material with this electrode slice when electric energy is provided, electric current by this current-diffusion layer guiding laterally evenly disperse the back downwards stream makes this start film produce photon through this start film; It is characterized in that:
This start film has the bottom surface that is connected with this base material; And one in contrast to this bottom surface and the end face that is connected with this current-diffusion layer; This end face also is distinguished into a plurality of intervals and uniformly dispersing ground is crossed with the high energy particle effect and high energy active region that electric current can't be passed through, and one is not crossed by the high energy particle effect thereby the resistance value electronics flow path area that stream passes through of can supplying power less than the resistance value of said high energy active region relatively.
6. high-brightness LED chip as claimed in claim 5 is characterized in that:
This high energy active region is to carry out the physical property bombardment with argon ion to form.
7. high-brightness LED chip as claimed in claim 5 is characterized in that:
This high energy active region is to form with the mist effect.
8. high-brightness LED chip as claimed in claim 6 is characterized in that:
This mist is to be selected from one of following mist: the mist of mist, argon gas and the carbon tetrafluoride gas of mist, argon gas and the chlorine of argon gas and boron chloride gas, the mist of argon gas, oxygen and carbon tetrafluoride gas.
9. like claim 5,6 or 8 described high-brightness LED chips, it is characterized in that:
This base material has one deck substrate, and one deck is formed in this substrate and with this start film bottom surface with the material with high index of refraction and is connected with catoptrical speculum.
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| CN2009100462743A CN101807634B (en) | 2009-02-17 | 2009-02-17 | High-brightness light emitting diode chip |
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|---|---|---|---|
| CN2009100462743A CN101807634B (en) | 2009-02-17 | 2009-02-17 | High-brightness light emitting diode chip |
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| CN101807634B true CN101807634B (en) | 2012-04-04 |
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| JP2002033512A (en) * | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | Nitride semiconductor light emitting diode |
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